34 results about "Bias stress" patented technology

A display apparatus includes a display panel including a pixel, a source driver outputting a data voltage supplied to the pixel, in a refresh frame and stop the output of the data voltage in at least one skip frame succeeding the refresh frame, and a bias controller configured to output a first on-bias stress voltage to the pixel, in the refresh frame and output a second on-bias stress voltage to the pixel, in the at least one skip frame. The first and second on-bias stress voltages are applied to one electrode of a driving transistor included in the pixel so as to improve a luminance difference caused by a leakage characteristic variation of the pixel, and the first and second on-bias stress voltages are different so that a threshold voltage characteristic of the driving transistor differs in the refresh frame and the at least one skip frame.

A display may have an array of organic light-emitting diode display pixels operating at a low refresh rate. Each display pixel may have six thin-film transistors and one capacitor. One of the six transistors may serve as the drive transistor and may be compensated using the remaining five transistors and the capacitor. One or more on-bias stress operations may be applied before threshold voltage sampling to mitigate first frame dimming. Multiple anode reset and on-bias stress operations may be inserted during vertical blanking periods to reduce flicker and maintain balance and may also be inserted between successive data refreshes to improve first frame performance. Two different emission signals controlling each pixel may be toggled together using a pulse width modulation scheme to help provide darker black levels.

The invention provides a gate drive circuit and a display panel, and the gate drive circuit enables a first control module to transmit one of a forward scanning control signal and a reverse scanning control signal to a first node according to a first control signal and a second control signal, so as to raise or lower the potential of the first node. A second control module transmits one of a first clock signal and a second clock signal to a second node according to a first control signal and a second control signal; and the switching control module controls the switching frequency of alternate working of two switching transistors in the potential maintaining module according to the signal of the second node and the received switching control signal, so that the duration of the bias stress action on each switching transistor is reduced, and the potential change of the first node caused by the threshold voltage offset of the switching transistors is improved. And the normal output of the output module and the working stability of the gate drive circuit are influenced.

A display device includes a display panel including at least one pixel, an EM driver configured to generate an emission control signal of a multi-pulse type multi-toggled in one frame and supply the emission control signal to the at least one pixel, and a scan driver configured to generate a scan signal turned on in at least one off period included in the emission control signal, and supply the scan signal to the at least one pixel, so as to apply an on-bias stress (OBS) voltage to one electrode of the driving transistor and reset the light emitting element.

The present invention provides a phosphorus-doped gallium oxide dielectric layer, a thin film transistor and a preparation method thereof, wherein a Ga2O3 dielectric layer with excellent dielectric properties is synthesized by phosphorus (P) doping using an aqueous solution method. Appropriate P incorporation can act as a network connection and reduce oxygen-related defects (oxygen vacancies and hydroxyls) in Ga2O3, thereby improving the dielectric properties of the Ga2O3 dielectric layer. Using a Ga‑P‑O dielectric with an optimal doping concentration, the oxide thin film transistor exhibits higher performance, including high mobility, high current on / off ratio, low operating voltage and negligible hysteresis, and has excellent bias stress stability. Moreover, the Ga2O3 dielectric layer is synthesized using an aqueous solution method, which is simple, fast, very convenient, suitable for large-scale production, and provides a new path for the next generation of low-cost advanced Ga2O3 devices.

A piano pedal system includes a pedal pivotable throughout a range of motion between a first position and a second position; a sensor configured to output an electrical signal indicative of a position of the pedal; and a biasing member coupled to the pedal, the biasing member configured to apply a biasing force on the pedal in response to displacement of the pedal from the first position. The biasing force is substantially linear throughout the range of movement.

The invention discloses a preparation method of a double-layer polymer / metal oxide hybrid channel for processing a flexible electrolyte gate transistor by using a low-temperature solution, which comprises the following steps of: preparing a flexible single-channel polymer EGT with a low-temperature process as a short-time memory reference, and preparing a mixed polymer / In2O3 EGT as a long-time memory candidate device; comprising solid electrolyte integration and electrode deposition; measuring electrical and synaptic characteristics, including transfer curve, hysteresis, EPSC response, and synaptic plasticity, as well as selectable bias stress and cryogenic measurements only for monitoring and archiving; processing the collected data, and extracting key parameters including memory retention time, EPSC amplitude, conductivity state modulation, enhancement / suppression linearity and durability under repeated circulation; comparing the short-time memory behavior with the long-time memory behavior, evaluating adjustable transformation between a single layer and a hybrid device, and evaluating a stability trend under multiple cycles; and generating a comparison report with the annotation chart.

The application provides a semiconductor device and an operating method of the semiconductor device, which comprises a bidirectional threshold switch device with a first end and a second end connected in power supply, and an internal switch circuit for connecting the first end and the second end, receiving an external signal and making the bidirectional threshold switch device receive an internal pulse signal with a shorter bias time than the external signal. The semiconductor device and the operating method of the semiconductor device provided by the application can convert the external pulse signal into the internal pulse signal, thereby greatly improving the pulse precision, reducing the bias stress, and accurately obtaining the intrinsic holding voltage of the device through the test of different currents, formula fitting and the like.

A surgical end effector for use with an electrosurgical instrument is disclosed. The end effector includes a first jaw having a first electrode and a second jaw having a second electrode. The end effector is transitionable from an open configuration to a closed configuration to grasp tissue. The second electrode is laterally offset from the first electrode. The first electrode and the second electrode are configured to cooperate to deliver bipolar energy to the tissue. The second jaw further includes a monopolar electrode configured to deliver monopolar energy to the tissue and a compliant substrate. The monopolar electrode and the second electrode are fixedly attached to the compliant substrate in a spaced apart arrangement. The compliant substrate is configured to apply a biasing force to the second electrode and the monopolar electrode toward the first jaw in the closed configuration.

According to one aspect of the present disclosure, a brightness difference compensation method of a display device includes: measuring a sensing voltage change at a node between a first driving transistor and a second driving transistor of a sub-pixel; calculating a first threshold voltage change of the first driving transistor according to the sensing voltage change; calculating a second threshold voltage change of the second driving transistor according to the first threshold voltage change and the prediction information; compensating the first data voltage based on the first threshold voltage change; and compensating the second data voltage based on the second threshold voltage change, and the prediction information is a difference between the first threshold voltage change and the second threshold voltage change according to the bias stress and time.

The present application provides a power-off protection device, a spindle system, and a thinning machine, which relate to the technical field of semiconductor processing equipment and include a first power-off protection unit, which includes: a mating portion fixedly mounted on the spindle; a receiving portion coaxially sleeved on the outer periphery of the mating portion and located below the mating portion, capable of forming a friction pair with the mating portion, realizing torque transmission with the mating portion when engaged, and providing an upward support force to the mating portion and the spindle; a first sliding portion coaxially sleeved on the outer periphery of the receiving portion, forming a rotation pair with the receiving portion and forming an axial linkage fit; a biasing member acting on the first sliding portion and applying an upward biasing force to the first sliding portion in the axial direction, so that the receiving portion and the mating portion form a coupled state; a pressurizing mechanism, which generates a force in the opposite direction to the biasing force in the power-on state, and the force is greater than the biasing force, so as to release the coupled state; and the force is eliminated in the power-off state. The problem of using a non-contact bearing for reliable power-off protection is solved.

The invention relates to a display device and a driving method thereof. The display device includes: a display panel including at least one pixel; a source driver configured to supply a data voltage to the pixels during a refresh frame; a scan driver configured to supply a scan signal to the pixels, the scan signal defining a timing of a first on bias stress (OBS) period and a timing of a second OBS period, the first OBS period being prior to a timing of supplying a data voltage to the pixels, the second OBS period being prior to a timing of supplying a data voltage to the pixels; the second OBS period is after the timing of supplying the data voltage to the pixel and before the light emission timing of the pixel; and an OBS control circuit configured to supply a first OBS voltage having a first level to the pixel during the first OBS period, and supply a second OBS voltage having a second level different from the first level to the pixel during the second OBS period.

A display device can include a display panel including a plurality of subpixels with each subpixel including a light-emitting element, and a data driver configured to supply a data voltage and an on-bias stress (OBS) voltage to each of the subpixels. The display device can further include a scan driver configured to output an emission signal for controlling a non-emission period and an emission period of the light-emitting element and an OBS signal for controlling an OBS period, and a controller configured to control the data driver and the scan driver.

A display apparatus includes a display panel including a pixel, a source driver outputting a data voltage supplied to the pixel, in a refresh frame and stop the output of the data voltage in at least one skip frame succeeding the refresh frame, and a bias controller configured to output a first on-bias stress voltage to the pixel, in the refresh frame and output a second on-bias stress voltage to the pixel, in the at least one skip frame. The first and second on-bias stress voltages are applied to one electrode of a driving transistor included in the pixel so as to improve a luminance difference caused by a leakage characteristic variation of the pixel, and the first and second on-bias stress voltages are different so that a threshold voltage characteristic of the driving transistor differs in the refresh frame and the at least one skip frame.

The invention provides a shift register, a gate drive circuit and a display panel, and the shift register comprises a pull-up module, a signal storage module and an output module, and enables a signal of a first node of the shift register to have an effective level in a first time period. And storing the level information of the signal of the first node to a second node of the shift register in a second time period, enabling the signal of the first node to have an invalid level in a third time period, and enabling the signal of the first node to have an effective level again in a fourth time period, therefore, the signal of the first node can have the ineffective level in the third time period between the first time period with the effective level and the fourth time period, the duration of bias stress borne by an output transistor in the output module is shortened, and the influence of the bias stress borne by the output transistor for a long time is improved.

The invention is entitled "Electronic device with low refresh rate display pixels." A display is disclosed that can have an array of organic light emitting diode display pixels that operate at low refresh rates. Each display pixel can have six thin film transistors and a capacitor. One of the six transistors can be used as a drive transistor and the remaining five transistors and capacitor can be used for compensation. One or more bias stress operations can be applied prior to threshold voltage sampling to mitigate first frame dimming. Multiple anode reset and bias stress operations can be inserted during a vertical blanking period to reduce flicker and maintain balance and can also be inserted between successive data refreshes to improve first frame performance. Two different emission signals that control each pixel can be toggled back and forth using a pulse width modulation scheme to help provide a darker black level.

The invention relates to a high-mobility oxide semiconductor thin film transistor based on a double-channel structure and a preparation method thereof, the high-mobility oxide semiconductor thin film transistor comprises a bottom gate, a channel dielectric layer, the double-channel structure, a source electrode, a drain electrode and a passivation layer, the bottom gate, the channel dielectric layer and the double-channel structure grow in sequence from bottom to top, the source electrode, the drain electrode and the passivation layer are respectively formed on a channel, and the double-channel structure is formed by stacking an a-IGZO channel layer and an a-IZO channel layer. Based on the characteristic of extremely low interface state density between the a-IZO material and the gate dielectric layer, the a-IZO / IGZO heterojunction structure can realize carrier transport performance of high mobility and high carrier concentration; and meanwhile, through barrier modulation, the trapping effect of the gate dielectric layer on a-IGZO channel carriers is effectively inhibited, so that the threshold voltage stability and the reliability under bias stress of the device are remarkably improved.

The invention provides a power-off protection device, a spindle system and a thinning machine, and relates to the technical field of semiconductor processing equipment.The power-off protection device comprises a first power-off protection unit and a second power-off protection unit, the bearing part is coaxially arranged on the periphery of the matching part in a sleeving mode, located below the matching part and capable of forming friction pair combination with the matching part, achieving torque transmission with the matching part during combination and providing upward supporting force for the matching part and the main shaft; the periphery of the bearing part is coaxially sleeved with the first sliding part, and the first sliding part and the bearing part form a rotating pair and are in axial linkage fit; the bias pressure piece acts on the first sliding part and applies upward bias pressure to the first sliding part in the axial direction, so that the bearing part and the matching part form a combined state; the pressurizing mechanism generates acting force opposite to the bias pressure in the power-on state, and the acting force is larger than the bias pressure so as to release the combination state; and the acting force is eliminated in a power-off state. The problem of real power-off protection of a non-contact bearing is solved.

A display device includes: a display panel including at least one pixel; an EM driver configured to generate a light emission control signal of a multi-pulse type that is multi-switched in one frame, and to supply the light emission control signal to at least one pixel; and a scan driver configured to generate a scan signal turned on in at least one turn-off period included in the light emission control signal, and supply the scan signal to the at least one pixel so as to apply an on bias stress (OBS) voltage to one electrode of the driving transistor and reset the light emitting element.

A display device includes a gate driver for applying a scan signal, an emission signal, and an inverted emission signal to the pixel circuits, in which the gate driver includes at least one scan driver for outputting the scan signal. The device includes a light emitting driver for outputting the emission signal, and inverting drivers of which at least some output an inverted emission signal of which phase is inverted from that of the emission signal using the scan signal output from the at least one scan driver and the emission signal output from the light emitting driver. Accordingly, the charging delay of the light emitting element upon the low-frequency driving in the variable refresh rate mode can be prevented and the characteristics and on-bias stress of the driving transistor can be adjusted.

A display may have an array of organic light-emitting diode display pixels operating at a low refresh rate. Each display pixel may have six thin-film transistors and one capacitor. One of the six transistors may serve as the drive transistor and may be compensated using the remaining five transistors and the capacitor. One or more on-bias stress operations may be applied before threshold voltage sampling to mitigate first frame dimming. Multiple anode reset and on-bias stress operations may be inserted during vertical blanking periods to reduce flicker and maintain balance and may also be inserted between successive data refreshes to improve first frame performance. Two different emission signals controlling each pixel may be toggled together using a pulse width modulation scheme to help provide darker black levels.

The invention provides a semiconductor device and an operation method of the semiconductor device, and the semiconductor device comprises the components of a bidirectional threshold switching device which is provided with a first end and a second end which are electrically connected; and the internal switching circuit is used for connecting the first end and the second end, receiving an external signal and applying an internal pulse signal of which the bias time is shorter than the bias time of the external signal to the bidirectional threshold switching device. According to the semiconductor device and the operation method of the semiconductor device provided by the invention, the external pulse signal can be converted into the internal pulse signal, so that the pulse precision is greatly improved, the bias stress is reduced, and the intrinsic holding voltage of the device can be accurately obtained through testing of different currents according to formula fitting.

Disclosed are a display device in which a scan timing for applying a stress voltage to a pixel is adjusted based on an operating frequency to prevent a flicker phenomenon even when the operating frequency varies, and a method for operating the same. The display device includes a display panel including a plurality of pixel circuits; and a gate driver circuit configured to provide an emission signal, a first scan signal, a second scan signal, a third scan signal, and a fourth scan signal to each of the plurality of pixel circuits, wherein when the display device operates in a variable refresh rate (VRR) mode, the display device is configured to adjust a time at and / or a time duration for which the third scan signal is enabled based on an operating frequency in each of a refresh frame and an anode reset frame, wherein the third scan signal is defined as a signal for applying an on-bias stress voltage to a pixel circuit.

A display device includes a display panel including a one pixel, a source driver configured to supply a data voltage to the pixel during a refresh frame, a scan driver configured to supply the pixel with a scan signal that defines a timing of a first on-bias stress (OBS) period that precedes a timing at which the data voltage is supplied to the pixel and a timing of a second OBS period that succeeds the timing at which the data voltage is supplied to the pixel and precedes an emission timing of the pixel, and an OBS control circuit configured to supply a first OBS voltage having a first level to the pixel during the first OBS period and supply a second OBS voltage having a second level that is different from the first level to the pixel during the second OBS period.

The invention discloses a display panel, a driving method thereof and a display device. The display panel comprises a pixel driving circuit, and the pixel driving circuit comprises a driving transistor, a first reset transistor, a threshold compensation transistor and a data writing transistor. In the first reset stage, the first enable level of the first scanning signal controls the first reset transistor to be switched on, the second enable level of the second scanning signal controls the threshold compensation transistor to be switched on, and the duration of the first enable level is larger than that of the second enable level. According to the display panel, the driving method thereof and the display device provided by the embodiment of the invention, the enabling time of the first scanning signal is prolonged, so that the driving transistor can be subjected to sufficient and lasting composite action of conduction bias stress (OBS) and negative bias stress (NBS), the ghosting problem of the display panel is improved, and the display effect of the display panel is improved. Meanwhile, thorough resetting of the first node, the second node and the third node of the driving transistor is achieved, and the problem that the brightness of the first frame is abnormal during picture switching is solved.

The organic light emitting display device is driven to be divided into a refresh frame when the data voltage is programmed in the pixel and a reset frame when the anode electrode of the organic light emitting diode is reset, and the data voltage is maintained to a first level during the reset frame. Accordingly, a separate stage for applying an on bias stress is not provided so that the bezel may be reduced.

The invention belongs to the technical field of power device testing, and particularly relates to a dynamic conduction threshold voltage testing circuit and method for a gallium nitride device. The problems of poor stress switching real-time performance, low parameter extraction precision, difficulty in covering various working conditions and the like in the dynamic threshold voltage representation of the existing GaN device are solved. The circuit comprises a high-voltage source circuit which is used for providing adjustable high-voltage bias and simulating high-voltage turn-off stress borne by a device in practical application; the stress control switch is used for accurately controlling the time and time sequence of stress application and realizing rapid switching between a stress state and a test state; the drain electrode load matching network is used for current limiting protection in an off-state drain electrode bias stress test and is used for providing adjustable working current for the device to be tested in a continuous switch stress test; and the threshold voltage test circuit is used for rapidly and accurately extracting the dynamic threshold voltage parameter of the device to be tested within the transient time after the stress is released.

This electrical device (30) includes: a housing (50) provided with housing-side terminals (54, 55) that electrically connect electronic components; a board (60) which is a substantially plate-shaped member housed in the housing (50) and which has board-side terminals (64, 65) that electrically connect the electronic components; a heat dissipation member (70) that uses a material having a higher thermal conductivity than the base material of the board (60) and is provided so as to overlap one surface (60a) of the board (60); and spring members (35, 36) which are provided on the other surface (60b) of the board (60), electrically connect the board-side terminals (64, 65) to the housing-side terminals (54, 55), and have a biasing force that presses the board (60) against the heat dissipation member (70).

A display device, 50, includes a gate driver, 20, for applying a scan signal, S1, S2, an emission signal, and an inverted emission signal to the pixel circuits, in which the gate driver includes at le

A display device and a driving method thereof are disclosed. The display device includes: a display panel including at least one pixel; a source driver configured to output a data voltage to be supplied to the at least one pixel in a refresh frame and stop outputting the data voltage to be supplied to the at least one pixel in at least one skip frame following the refresh frame; and a bias controller configured to output a first turn-on bias stress voltage to be supplied to the at least one pixel in the refresh frame, and output a second turn-on bias stress voltage to be supplied to the at least one pixel in the at least one skip frame. First and second on-bias stress voltages are applied to one electrode of a driving transistor included in at least one pixel to improve a brightness difference caused by a change in a leakage characteristic of the at least one pixel, and the first and second on-bias stress voltages are set differently, threshold voltage characteristics of the driving transistor are made different in the refresh frame and the at least one skip frame.