High-temperature grid bias test method of SiC MOSFET device, computer equipment and storage medium
A technology of high-temperature gate bias and test method, which is applied in the direction of single semiconductor device test, instrument, measurement device, etc., and can solve problems such as not considering the dependence of threshold voltage time
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[0023] In order to facilitate understanding of the present invention, the present invention will be described more fully described with reference to the related drawings. A preferred embodiment of the present invention is given in the drawings. However, the present invention can be implemented in many different forms, is not limited to the embodiments described herein. Conversely, the purpose of providing these embodiments is to be more thoroughly comprehensively understood to understand the disclosure of the present invention.
[0024] It should be noted that when the element is referred to as "fixed to" another element, it can be directly in another element or may also exist. When a component is considered to be "connected" another element, it may be directly connected to another element or may always exist in the center element. The term "vertical", "horizontal", "left", "right", as used herein, "upper", "lower", "front", "rear", "circumferential" and similar expressions are ba...
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