81297 results about "Transistor" patented technology

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.

A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

A motor control device selectively turns on or off a drive transistor in-accordance with a PWM control signal Sp, such that a drive current Im supplied to a motor is adjusted. The device also samples and holds a motor current Sm for obtaining a motor current value Ih. With reference to the motor current value Ih, the device protects the motor from an overcurrent. Sampling and holding of the motor current Sm is performed for a sampling and holding time Ts. The sampling and holding time Ts corresponds to a time period between a first point in time when the level of the PWM control signal Sp is switched for turning off the drive transistor and a second point in time that precedes the first point in time by a predetermined period. As a result, the motor current value Ih is detected with high accuracy.

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.

A display including a current drive circuit capable of supplying a desired current to a light-emitting element in each pixel stably and accurately irrespective of the characteristic variations of active elements in the pixel, thereby providing a high-definition image. Each pixel is composed of a receiving transistor (TFT3) for receiving a signal current (1w) from a data ine (data) when a scanning line (scanA) is selected, a converting transistor (TFT1) for converting the current level of the received signal current (1w) to a voltage level and holding the voltage level, and a driving transistor (TFT3) for allowing a drive current having a current level corresponding to the held voltage level to flow through light-emitting element (OLED). The converting thin film transistor (TFT1) generates the converted voltage level at its gate by allowing the signal current (Iw) through its channel, and a capacitor (C) holds the voltage level at the gate of the transistor (TFT1). The transistor (TFT2) allows the drive current having a current level corresponding to the voltage level held by the capacitor (C) to flow through the light-emitting element (OLED).

A process for depositing a silicon-based material on a substrate uses the technology of plasma-enhanced atomic layer deposition. The process is carried out over several cycles, wherein each cycle includes: exposing the substrate to a first precursor, which is an organometallic silicon precursor; and applying a plasma of at least a second precursor, different from the first precursor. Semiconductor products such as 3D capacitors, vertical transistor gate spacers, and conformal transistor stressors are made from the process.

Apparatus and methods are disclosed for simultaneously tracking multiple finger and palm contacts as hands approach, touch, and slide across a proximity-sensing, compliant, and flexible multi-touch surface. The surface consists of compressible cushion dielectric, electrode, and circuitry layers. A simple proximity transduction circuit is placed under each electrode to maximize signal-to-noise ratio and to reduce wiring complexity. Such distributed transduction circuitry is economical for large surfaces when implemented with thin-film transistor techniques. Scanning and signal offset removal on an electrode array produces low-noise proximity images. Segmentation processing of each proximity image constructs a group of electrodes corresponding to each distinguishable contact and extracts shape, position and surface proximity features for each group. Groups in successive images which correspond to the same hand contact are linked by a persistent path tracker which also detects individual contact touchdown and liftoff. Combinatorial optimization modules associate each contact's path with a particular fingertip, thumb, or palm of either hand on the basis of biomechanical constraints and contact features. Classification of intuitive hand configurations and motions enables unprecedented integration of typing, resting, pointing, scrolling, 3D manipulation, and handwriting into a versatile, ergonomic computer input device.