2634 results about "Aperture ratio" patented technology

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

An organic light emitting diode (OLED) display includes at least one shield electrode between a cathode layer and an OLED drive circuit. The OLED drive circuit has at least one thin-film transistor (TFT), and the shield electrode is disposed to correspond to the thin-film transistor and closer to the cathode layer, covering an entire region between the source and drain of the thin-film transistor. The shield electrode is either grounded or tied to the gate of the thin-film transistor, to thereby minimize parasitic capacitances in the pixels of the display to enhance the display performance. The presented architecture enables high density drive circuit integration in amorphous silicon or other technologies, yet preserving a high display aperture ratio.

A mixing fluid providing device (1) which provides with the further homogenized mixed state is provided with a mixing gas tubing (4) that mixes the auxiliary gas provided from the main gas tubing and a mixing fluid homogenizing device (6) that is arranged in the mixing gas tubing (4); the mixing fluid homogenizing device (6) is provided with a fixed perforated plate (8) and a movable perforated plate (9) which are mutually overlapped and jointed, and a driving cylinder (11) which causes the movable perforated plate (9) move in the surface direction relative to the fixing perforated plate (9); each perforated plate (8 and 9) is formed with a plurality of through holes (10) and forms a structure which can change the overlapping degree between the through hole (10) of the two perforated plates (9) and the aperture ratio of all through holes (10) by the moving of the movable perforated plate (9).

A pixel current driver comprises a plurality of thin film transistors (TFTs) each having dual gates and for driving OLED layers. A top gate of the dual gates is formed between a source and a drain of each of the thin film transistors, to thereby minimize parasitic capacitance. The top gate is grounded or electrically tied to a bottom gate. The plurality of thin film transistors may be two thin film transistors formed in voltage-programmed manner or five thin film transistors formed in a current-programmed ΔV_T-compensated manner. Other versions of the current-programmed circuit with different numbers of thin film transistors are also presented that compensate for δV_T. The OLED layer are continuous and vertically stacked on the plurality of thin film transistors to provide an aperture ratio close to 100%.

There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different from the layer on which a gate wiring (145) is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring (145) so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.

An active matrix liquid crystal display having a high aperture ratio is provided. Retaining capacitors are created between a black matrix and pixel electrodes via a dielectric layer made from an organic resinous material or inorganic material. Those regions of the black matrix which cover TFTs are fully utilized. Therefore, wider area can be used to display an image than heretofore. In the present invention, the difference in relative dielectric constant between different dielectric layers is employed. Therefore, retaining capacitors can be created without the need to take account of parasitic capacitance.

A drive transistor is connected, via its drain region, to a power supply line, and, via its source region, to a transparent electrode of an organic EL element. The channel region is formed bent into a substantially L shape. This arrangement is able to simplify the arrangement of a gate electrode by providing the gate electrode so as to run straight over a channel region in parallel to the power source line. Accordingly, the aperture ratio is increased.

A method for resolution enhancement of a still-image made by a digital imaging device. The method allows the use of high-aperture-ratio sensing arrays that produce resolution-enhancement, independent of the angle of view. Resolution-enhancement is achieved using a multiple-exposure technique of a sub-pixel overtap in conjunction with a whole-pixel shift. The method suppresses color-aliasing in a multiple-exposure native-resolution mode and enables the use of a single camera for single-exposure and multiple-exposure modes.

Each pixel (21) includes a plurality of light emitting regions (11R, 11G, and 11B) corresponding R, G, and B each having an organic EL layer (3), and a plurality of TFT elements (12) provided corresponding to the light emitting regions to control light emission in the respective light emitting regions. The light emitting regions are provided in a zigzag manner and adjacent light emitting regions are kept from contacting one another. Each pixel (21) is divided into six segments (22a to 22c and 23a to 23c), and the light emitting regions are arranged in three segments (22a to 22c) in a zigzag manner. In this way, in a bottom emission type, active matrix organic EL display, a sufficient aperture ratio can efficiently be secured, and pixels can be arranged so that the aperture ratio is hardly a trade off for higher resolution. Therefore, power consumption for obtaining necessary luminance can be reduced, and this can contribute to downsizing of the driving circuit and the device as a whole.

There is a problem in that, in a liquid crystal display panel in which a color filter is formed on an opposing substrate, it is necessary to assemble an element substrate and the opposing substrate by extremely high precision position alignment, and when this precision is low, the aperture ratio decreases and the display becomes darker. With the present invention, red color filters (R) are formed on driving circuits (402, 403), peripheral circuits, and a color filter (405d) for protecting a pixel TFT portion (407) is formed for each pixel.

Conventionally, there are problems that high resolution is difficult to be achieved since an extreme narrow width bank can not be formed and an aperture ratio as a light-emitting device is low. In addition, there is a threat of electrostatic discharge damage or adhesion of dust during the transportation of a substrate provided with an anode into the equipment for depositing EL material. In view of the foregoing, a first bank formed of an inorganic insulating film is formed, and an insulating film is formed thereon, then, a second bank in contact with a side face of the first bank by carrying out etch back, and then, a side wall bank is formed. For preventing electrostatic discharge damage, an antistatic layer is formed, and the substrate is transported, then, the antistatic layer is removed to form the second bank.

A deposition mask and a display unit and method of manufacturing same are provided. A red continuous organic layer, a green continuous organic layer, and a blue continuous organic layer are provided over two or more lines of a matrix configuration of organic light emitting devices in common. A film thickness distribution in the extensional direction of the red, green and blue continuous organic layer is dissolved, and an aperture ratio can be improved by just that much.

As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO₂ is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.

A coordinate sensor (10) includes at least two line sensors (1) that are disposed in x-axis and y-axis directions, and right-angle prisms (2) each of which changes a light path of light that has passed through an image display region of a liquid crystal panel (20). Each of the line sensors (1) is disposed outside the image display region and has a light-receiving surface (1a) parallel to an image display surface of the liquid crystal panel (20). The right angle prisms (2) cause light which travels in the x-axis and y-axis directions and which has passed through the image display region to be guided to the light-receiving surfaces (1a) of the line sensors (1). The coordinate sensor (10) receives the light which has thus passed through the image display region of the liquid crystal panel (20) so as to detect a coordinate, on the image display region, that is indicated by an object to be detected such as a finger. Consequently, a thin coordinate sensor that enables easy alignment with no reduction in aperture ratio and no restriction on operation speed can be realized at low cost.

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

The honeycomb structured body of the present invention is a pillar-shaped honeycomb structured body having a honeycomb structure that a number of through holes are placed in parallel with one another in the length direction with a wall portion interposed therebetween and one of ends of each through hole is sealed, wherein a relation between a volume Y (L) of said honeycomb structured body and an aperture ratio X (%) on an inlet side satisfies the following inequality (1):

Y≦−1.1X+68.5 (wherein Y≦19, 35≦X≦56)  (1).

To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor, even when the number of field-effect transistors in the pixel is increased. A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween.