8135 results about "Light-emitting diode" patented technology

An optical physiological sensor can be integrated into a wearable device and can comprise a substrate having an optical center, a first emitter group of light emitting diodes (LEDs) positioned adjacent to the optical center of the substrate and spaced at an offset from the optical center, a second emitter group of LEDs positioned adjacent to the optical center of the substrate at an offset to the optical center and spaced at an offset from the optical center opposite the first emitter group of LEDs relative to the optical center, and a plurality of detectors arranged in a spatial configuration that surrounds the first and the second emitter group. Each of the plurality of detectors can be positioned on the substrate a same distance away from the optical center of the substrate.

Various illustrative systems, devices, and methods for face masks are provided. In general, a face mask is configured to provide light therapy to a user wearing the face mask. In an exemplary implementation, the face mask includes a light assembly configured to apply light therapy to a user wearing the face mask. The light assembly includes a plurality of lights, such as light emitting diodes (LEDs), configured to emit light and thereby provide light therapy to the user's face. The face mask also includes a protective member configured to protect the user's eyes from the light emitted by the lights. The protective member is configured to form a seal against the face of the user wearing the face mask and is configured to dynamically conform to a user's face.

A variable-wavelength light emitting diode (LED) is provided. The variable-wavelength LED comprises an n-doped portion, a p-doped portion, and a light-emitting region located between the n-doped portion and the p-doped portion. The light-emitting region comprises a light-emitting layer which emits light at a peak emission wavelength under electrical bias thereacross. The LED is configured to receive a power supply, and the peak emission wavelength of the LED is continuously controllable over an emission wavelength range of at least 40 nm by varying the power supply. A display device comprising this variable-wavelength LED, a method of controlling said variable-wavelength LED and a method of manufacturing a variable-wavelength LED are also provided.

The invention provides a light-emitting diode chip and a preparation method thereof, and the light-emitting diode chip comprises a conductive silicon wafer, a metal bonding layer, an N-type conductive metal layer, a first insulation protection layer, a P-type conductive metal layer, a P-type reflection metal layer, a current blocking layer, a current expansion layer, and an epitaxial layer which are stacked from bottom to top. The projection of the edge of the P-type conductive metal layer on the current expansion layer is located in the projection of the isolation groove on the current expansion layer, and the ratio of the distance between the projection of the edge of the P-type conductive metal layer on the current expansion layer and the projection of the edge of the isolation groove on the current expansion layer to the width of the isolation groove is 1 / 3-2 / 3. The isolation groove and the cutting wall are arranged on the current expansion layer, and the distance proportion relation between the edge of the P-type conductive metal layer and the isolation groove is favorable for controlling the distribution of current in the light-emitting diode chip, so that the current is prevented from being excessively concentrated, the current is more uniformly expanded to the epitaxial layer, and the overall light-emitting efficiency and stability of the light-emitting diode chip are improved.

A display module includes a substrate including a mounting surface and a side surface; a Thin Film Transistor (TFT) layer provided on the mounting surface of the substrate; a plurality of inorganic light emitting diodes mounted on the mounting surface of the substrate; an anisotropic conductive layer provided on an upper surface of the TFT layer and electrically connecting the TFT layer to the plurality of inorganic light emitting diodes; a front cover covering the mounting surface; and a side cover surrounding the side surface. A side end of the front cover extends to a region outside the mounting surface, and the side cover is bonded to a lower surface of the front cover and to the side surface of the substrate which correspond to the region outside of the mounting surface.

An apparatus may include: (a) a processing chamber including chamber walls and a chamber heater; and (b) a pedestal positioned within the chamber interior and including: (i) a substrate heater having a plurality of light emitting diodes (LEDs), (ii) a window positioned above the substrate heater comprising a material transparent to light from the LEDs, (iii) three or more substrate support pads configured to support a substrate such that the window and the substrate are offset by a nonzero distance; and (iv) a temperature sensor comprising a first detector configured to measure thermal radiation emitted by the substrate, and a second detector configured to measure light transmitted through the substrate.

The invention discloses a transparent composition photoresist with low shrinkage and low vacuum deflation. Comprising the following raw materials in percentage by mass: 1-5% of modified polyhedral oligomeric silsesquioxane (POSS), 1-5% of an expanding monomer, 1-5% of modified acrylic resin, 1-5% of epoxy resin, 1-5% of a thiol cross-linking agent, 1-5% of an initiator, 0.1-3% of a curing accelerator, 0.2-0.5% of a flatting agent, 0.1-5% of a silane coupling agent, 0.01-0.2% of an antioxidant and 80-90% of an electronic-grade organic solvent. The invention also provides a preparation method of a cured coating prepared from the transparent composition photoresist with low shrinkage and low vacuum deflation. The product provided by the invention not only can maintain the properties of high hardness, high thermal stability, high planarization ability, high barrier property, low hygroscopicity, low dielectric constant and the like of the transparent composition photoresist coating, but also can enable the transparent composition photoresist coating to have excellent low shrinkage and low outgassing, thereby achieving the purposes of saving energy, reducing emission, reducing cost and improving efficiency; the low shrinkage of the transparent composition photoresist coating also widens the development of the material in the fields of other panel production processes such as OLED (Organic Light Emitting Diode) and the like.

A display device includes a substrate including a display area and a peripheral area adjacent to the display area, a plurality of light-emitting diodes arranged in the display area, a first inorganic encapsulation layer disposed on the plurality of light-emitting diodes, an organic encapsulation layer disposed on the first inorganic encapsulation layer, a plurality of inorganic patterns disposed on the organic encapsulation layer and spaced apart from each other, and a touch electrode disposed on the organic encapsulation layer and defining a plurality of electrode holes respectively overlapping the plurality of light-emitting diodes in a plan view.

The invention discloses a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, a columnar or halfpace-shaped table surface is formed on the surface of a silicon substrate, and then an AlN buffer layer, an AlGaN stress modulation layer, an n-type GaN layer, an InGaN / GaN composite quantum well layer and a p-type conductive layer sequentially extend on the table surface of the silicon substrate to form a miniature light-emitting diode table surface; through stress release of the side wall of the mesa and stress modulation of the AlGaN layer, tensile stress distribution which is gradually reduced from the center of the mesa to the outer ring is formed in the n-type GaN layer, so that indium component distribution in the InGaN / GaN composite quantum well layer is regulated and controlled, and the micro light-emitting diode mesa covering three primary color wavebands of red, green and blue is formed. According to the chip structure disclosed by the invention, the red, green and blue three-primary-color sub-pixels are integrated, and the difficulty of a mass transfer process of the full-color micro light-emitting diode display chip is reduced. According to the invention, the preparation of the red, green and blue three-primary-color sub-pixels can be completed only by implementing an epitaxial process once, and the process flow is simplified.

The invention provides a light emitting diode with improved color purity and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises a first semiconductor layer, a first light-emitting layer, a second light-emitting layer and a second semiconductor layer which are sequentially stacked, the first light-emitting layer is a green light-emitting layer, the second light-emitting layer is a blue light-emitting layer, and the ratio of the light-emitting intensity of the first light-emitting layer to the light-emitting intensity of the second light-emitting layer ranges from 2: 10 to 4.8: 10. According to the embodiment of the invention, the color gamut value of the light-emitting diode can be improved, the color purity of the light-emitting diode can be improved, and the light-emitting effect is improved.

The invention provides a display module, a preparation method thereof and electronic equipment, relates to the technical field of display, and aims to solve the problems of low imaging quality and the like of the display module. The display module comprises a driving substrate, a conductive grid, a transparent conductive layer and a plurality of miniature light-emitting diodes, the driving substrate comprises a plurality of first electrode contacts and a plurality of second electrode contacts, the miniature light-emitting diodes comprise first electrodes and second electrodes, and the miniature light-emitting diodes correspond to the first electrode contacts one to one. The first electrodes of the micro light-emitting diodes are electrically connected with the corresponding first electrode contacts; the conductive grid is electrically connected with the second electrode contact; the transparent conductive layer covers the plurality of micro light emitting diodes and the conductive grid, the second electrodes of the micro light emitting diodes are electrically connected with the conductive grid through the transparent conductive layer, and the resistivity of the material of the conductive grid is smaller than that of the material of the transparent conductive layer.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked first n-GaN layer, first MQW layer, p-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the p-GaN layer. A plurality of mesas is formed by forming, within each aperture, a second MQW layer and a second n-GaN layer above each second MQW layer. The second n-GaN layer and second MQW layer of each mesa form a respective mesa LED with the p-GaN layer. The first n-GaN layer and first MQW layer form a lower LED with the p-GaN layer.

Data are optically transmitted from a power tool device, such as a power tool, a power tool battery charger, power tool pack adapter, and / or a battery pack. The data are stored in a memory of the power tool device and are encoded as optical signal data to provide an encoded representation of the stored data. An optical transmitter (e.g., a light emitting diode or a flat panel display) transmits the optical signal data, which are detected or otherwise received by an optical receiver device, which may include a camera or other photodetector. The optical signal data may include light signals generated by an LED, where the data are encoded using an encoding scheme that modulates one or more characteristics (e.g., amplitude, wavelength, color) of the generated light signals. The optical signal data may also include images (e.g., barcodes, QR codes) or characters.

An example MR headset is provided. The example MR headset comprises (i) a set of imaging sensors and (ii) a set of floodlight-emitting diodes (flood LEDs), the sets of imaging sensors and flood LEDs disposed along a front-facing portion of the MR headset. The MR headset includes one or more processors configured to, while the MR headset is being caused to present MR content, and in accordance with a determination that imaging data obtained from the set of imaging sensors has an insufficient level of detail to identify hand gestures, cause illumination, using one or more flood LEDs of the set of flood LEDs, of a volume of physical space that includes the hand of the user.

Provided is a display device including a CMOS wafer and a light emitting diode disposed on a first area of the CMOS wafer. The light emitting diode includes a first electrode member, an emission layer disposed on the first electrode member, and a second electrode member disposed on a semiconductor junction member. The first electrode member includes a metal layer, a reflective layer disposed on the metal layer, and a first transparent conductive layer disposed on the reflective layer.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an organic small molecule compound, an OLED with the compound and an organic light-emitting device with the compound. According to the organic small molecule compound, the dibenzoheterocycle on the triarylamine compound is substituted and matched, and the organic small molecule compound is used as a material for forming a light-emitting auxiliary layer to manufacture an organic EL element, so that the evaporation process of the device can be smoothly carried out, the light-emitting efficiency of the organic light-emitting device is effectively improved, and the organic small molecule compound has a very good application prospect.

A display device may include a display panel having a first area, a second area adjacent to the first area in a first direction, and a third area adjacent to the second area in the first direction, and including first light emitting diodes, second light emitting diodes, first optical members, and second optical members. The display device may further include a mode controller configured to generate a mode selection signal corresponding to a driving mode of the display panel, and a mode selector configured to generate a selection signal based on the mode selection signal, and to supply the selection signal to the display panel. The first and second light emitting diodes and the first optical members may be disposed in each of the first, second, and third areas. The second optical members may be disposed in each of the second and third areas.

Solid-state lighting devices, and more particularly, symmetrical lead frame structures for two-pin light emitting diode (LED) packages and methods for making the same are disclosed. The symmetrical lead frame structure can include a pair of leads that include symmetrical split cup portions that collectively, when placed next to each other, form a cup, across which an LED flip-chip can be placed. Each of the leads can be a respective electrode powering the LED flip-chip, which together with the symmetrical structure, provides a more even light emission profile and far-field pattern. A molded lens can be formed around the lead frame to protect the chip, as well as maintain a gap between the pair of leads of the lead frame structure. In some embodiments, a fill material can be added in the gap between the pair of leads.

The invention relates to the technical field of luminescent materials, and discloses a preparation method and application of a transition metal and chalcogen ion doped metal halide high-efficiency wide-spectrum luminescent material, the chemical formula of the transition metal and chalcogen ion doped metal halide is Cs2Sn1-x-yCl6: x% Te < 4 + >, yMo < 4 + >, the ultra-wideband fluorescent powder converted light emitting diode (LED) covers the range from visible light (VIS) to near infrared light (NIR), and shows remarkable potential in practical application. According to the invention, ultra-wide spectrum emission from 400 nm to 1400 nm is realized in Mo < 4 + >-Te < 4 + > co-doped Cs2SnCl6, and the photoluminescence quantum yield of 95.3% is achieved, the excellent performance is realized through efficient energy transfer from Te < 4 + > to Mo < 4 + > and passivation synergistic effect of vacancy defects, and the performance can be verified through theoretical calculation and spectral research; finally, the ultra-wideband fluorescent powder conversion LED based on the Mo < 4 + > and Te < 4 + > co-doped Cs2SnCl6 is successfully prepared and is applied to the fields of blood gas analysis and night vision imaging.

A LED circuit with a sequence function includes a load component, a capacitive component, a current load, and a voltage processor. The load component provides a resistance value. The capacitive component is connected to the load component in series at anode. The capacitive component provides a capacitance value, and generates an inner voltage at the node. The current load is connected in parallel to the load component and the capacitive component to provide a current path. The voltage processor receives the inner voltage and a threshold voltage, and compares the inner voltage with the threshold voltage to generate a comparison signal. The LED circuit counts time to acquire a time value from a starting time when the voltage processor starts to generate the comparison signal to a time when a level of the comparison signal changes, and uses the time value for sequencing.

Provided in the present invention are a flip light-emitting diode chip and a manufacturing method therefor. The flip light-emitting diode chip comprises: a substrate, and an N-type semiconductor layer, an active light-emitting layer, a P-type semiconductor layer, a current spreading layer, a first insulating layer, a Bragg reflective layer, a metal reflective layer, a second insulating layer, a connection metal layer, a third insulating layer and a bonding pad layer, which are sequentially deposited on the substrate. The connection metal layer comprises a reflective layer and a protective layer that are sequentially arranged from bottom to top; the protective layer comprises a first protective parent layer, a second protective parent layer, and a third protective parent layer that are sequentially arranged from bottom to top, the second protective parent layer comprising n first protective sublayers and second protective sublayers that are periodically stacked, the thicknesses of the first protective sublayers gradually increasing linearly toward the third insulating layer, and the thicknesses of the second protective sublayers gradually decreasing linearly toward the third insulating layer.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a dielectric layer formed over a lower n-type gallium nitride (n-GaN) layer. A first aperture and a second aperture are formed through the dielectric layer and extending to the lower n-GaN layer, the second aperture being narrower than the first aperture. A mesa is formed within the first aperture by successively forming a mesa n-GaN layer, a mesa MQW layer above the mesa n-GaN layer, and a mesa p-GaN layer above the mesa MQW layer. A pyramid having sidewalls is formed within the second aperture by successively forming a pyramidal n-GaN layer, a pyramidal MQW layer, and a pyramidal p-GaN layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer form a mesa LED. The pyramidal n-GaN layer, pyramidal MQW layer, and pyramidal p-GaN layer form a pyramid LED.

The invention provides a MicroLED (Light Emitting Diode) display screen Demura preprocessing method and a MicroLED display screen Demura preprocessing system based on a color matrix. Acquiring brightness and chrominance distribution data of the MicroLED display panel based on the imaging type colorimeter; based on the data, performing accurate calculation through a compensation algorithm to obtain a compensation value of each pixel point; and the compensation values are applied to the display panel driving circuit, so that accurate compensation of the Mura phenomenon is realized. According to the method, the brightness and chrominance of the Mura data are automatically analyzed, the optimal compensation target value is determined, accurate compensation of the pixel level can be achieved through support of the Mura data and a compensation algorithm, the system can monitor input data of the display panel in real time and adjust the compensation value in real time, expandability is good, and the method is suitable for large-scale popularization and application. And the system can support MicroLED display panels with different sizes and resolution ratios, and the like. The system is mainly composed of a data acquisition processing module and a compensation value preprocessing calculation module.

The embodiment of the invention provides a light-emitting diode chip set, a backlight module of a display and an illumination module, and relates to the technical field of semiconductors, the light-emitting diode chip set generates white light and comprises at least one multi-wavelength chip, the multi-wavelength chip comprises an N-type semiconductor layer, a P-type semiconductor layer, a first light-emitting layer and a second light-emitting layer, wherein the first light-emitting layer and the second light-emitting layer are arranged between the N-type semiconductor layer and the P-type semiconductor layer and are stacked. The first light-emitting layer generates light of a first wave band through electroluminescence and excites the second light-emitting layer to generate light of a second wave band, the number of wavelengths contained in the light of the first wave band and the number of wavelengths contained in the light of the second wave band are both larger than or equal to 1 and smaller than or equal to 10, and a hole isolation area exists between the first light-emitting layer and the second light-emitting layer. The multi-wavelength chip has higher external quantum efficiency, the limitation of a traditional white light scheme (blue chip + yellow fluorescent powder or blue chip + green fluorescent powder + red fluorescent powder) can be broken through, the reliability is improved, and the service life is prolonged.

The invention discloses a micro light-emitting diode display chip which comprises a light-emitting area, a metal layer and a shielding layer, the light-emitting area comprises a micro light-emitting diode array, the micro light-emitting diode array comprises a plurality of micro light-emitting diodes, the metal layer is located on the periphery of the micro light-emitting diode array, and the shielding layer is located on the periphery of the metal layer. At least one part of the metal layer is electrically connected with the micro light-emitting diode array, and the shielding layer is at least located on the surface of or above part of the metal layer. By arranging the shielding layer, light emitted by the light-emitting area can be reflected after reaching the surface of the shielding area through external reflection, so that the picture display quality is effectively improved.

A display device comprises a first substrate and a second substrate. The first substrate includes a plurality of singulated control devices embedded in a first dielectric layer. The second substrate includes a plurality of singulated LEDs embedded in a second dielectric layer. The second substrate is directly bonded to the first substrate without an intervening adhesive.

A display device includes an organic light emitting diode emitting light, an antireflection layer disposed on the organic light emitting diode and preventing reflection of external light incident from an outside, and a thin film encapsulation layer disposed on the antireflection layer.

The invention discloses an LED (Light Emitting Diode) energy-saving street lamp system self-adaptive to an ambient light effect and an illumination adjusting method thereof, and belongs to the technical field of novel illumination control and green energy conservation. The system comprises a light environment sensing module, a traffic flow monitoring module, an LED driving power supply and an electroluminescent illumination module composed of a plurality of light emitting diodes. The main control module is configured to execute active lighting effect decoupling logic, namely, when the electroluminescent lighting module keeps steady-state lighting, the driving power supply is controlled to inject a micro-disturbance modulation signal which cannot be perceived by human vision into output current, and illuminance response data of the light environment perception module are synchronously collected; the road surface reflectivity coupling coefficient is obtained in real time by calculating the change ratio of the response data to the modulation signal, then the reflected light component excited by the street lamp itself is accurately removed from the total illumination value, and the pure environment background illumination is decoupled. The problems of misoperation and energy waste caused by self-luminous interference of a traditional light-operated street lamp are solved.

A display device includes a first pixel circuit disposed on a substrate and a first light-emitting diode electrically connected to the first pixel circuit, the first pixel circuit includes a driving transistor including a driving semiconductor layer and a driving gate electrode, a first initialization transistor including a first initialization semiconductor layer and a first initialization gate electrode and electrically connected to the driving transistor, and a first connection electrode electrically connecting the first initialization semiconductor layer to the driving gate electrode, a semiconductor layer including the first initialization semiconductor layer includes a first extension area extending from a channel area of the first initialization semiconductor layer to the first connection electrode, and the first extension area overlaps a first shield layer disposed under the first initialization semiconductor layer and a second shield layer disposed above the first initialization semiconductor layer.