6415 results about "Light-emitting diode" patented technology

The invention discloses a transparent composition photoresist with low shrinkage and low vacuum deflation. Comprising the following raw materials in percentage by mass: 1-5% of modified polyhedral oligomeric silsesquioxane (POSS), 1-5% of an expanding monomer, 1-5% of modified acrylic resin, 1-5% of epoxy resin, 1-5% of a thiol cross-linking agent, 1-5% of an initiator, 0.1-3% of a curing accelerator, 0.2-0.5% of a flatting agent, 0.1-5% of a silane coupling agent, 0.01-0.2% of an antioxidant and 80-90% of an electronic-grade organic solvent. The invention also provides a preparation method of a cured coating prepared from the transparent composition photoresist with low shrinkage and low vacuum deflation. The product provided by the invention not only can maintain the properties of high hardness, high thermal stability, high planarization ability, high barrier property, low hygroscopicity, low dielectric constant and the like of the transparent composition photoresist coating, but also can enable the transparent composition photoresist coating to have excellent low shrinkage and low outgassing, thereby achieving the purposes of saving energy, reducing emission, reducing cost and improving efficiency; the low shrinkage of the transparent composition photoresist coating also widens the development of the material in the fields of other panel production processes such as OLED (Organic Light Emitting Diode) and the like.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an organic small molecule compound, an OLED with the compound and an organic light-emitting device with the compound. According to the organic small molecule compound, the dibenzoheterocycle on the triarylamine compound is substituted and matched, and the organic small molecule compound is used as a material for forming a light-emitting auxiliary layer to manufacture an organic EL element, so that the evaporation process of the device can be smoothly carried out, the light-emitting efficiency of the organic light-emitting device is effectively improved, and the organic small molecule compound has a very good application prospect.

A display device may include a display panel having a first area, a second area adjacent to the first area in a first direction, and a third area adjacent to the second area in the first direction, and including first light emitting diodes, second light emitting diodes, first optical members, and second optical members. The display device may further include a mode controller configured to generate a mode selection signal corresponding to a driving mode of the display panel, and a mode selector configured to generate a selection signal based on the mode selection signal, and to supply the selection signal to the display panel. The first and second light emitting diodes and the first optical members may be disposed in each of the first, second, and third areas. The second optical members may be disposed in each of the second and third areas.

A LED circuit with a sequence function includes a load component, a capacitive component, a current load, and a voltage processor. The load component provides a resistance value. The capacitive component is connected to the load component in series at anode. The capacitive component provides a capacitance value, and generates an inner voltage at the node. The current load is connected in parallel to the load component and the capacitive component to provide a current path. The voltage processor receives the inner voltage and a threshold voltage, and compares the inner voltage with the threshold voltage to generate a comparison signal. The LED circuit counts time to acquire a time value from a starting time when the voltage processor starts to generate the comparison signal to a time when a level of the comparison signal changes, and uses the time value for sequencing.

Provided in the present invention are a flip light-emitting diode chip and a manufacturing method therefor. The flip light-emitting diode chip comprises: a substrate, and an N-type semiconductor layer, an active light-emitting layer, a P-type semiconductor layer, a current spreading layer, a first insulating layer, a Bragg reflective layer, a metal reflective layer, a second insulating layer, a connection metal layer, a third insulating layer and a bonding pad layer, which are sequentially deposited on the substrate. The connection metal layer comprises a reflective layer and a protective layer that are sequentially arranged from bottom to top; the protective layer comprises a first protective parent layer, a second protective parent layer, and a third protective parent layer that are sequentially arranged from bottom to top, the second protective parent layer comprising n first protective sublayers and second protective sublayers that are periodically stacked, the thicknesses of the first protective sublayers gradually increasing linearly toward the third insulating layer, and the thicknesses of the second protective sublayers gradually decreasing linearly toward the third insulating layer.

The invention provides a MicroLED (Light Emitting Diode) display screen Demura preprocessing method and a MicroLED display screen Demura preprocessing system based on a color matrix. Acquiring brightness and chrominance distribution data of the MicroLED display panel based on the imaging type colorimeter; based on the data, performing accurate calculation through a compensation algorithm to obtain a compensation value of each pixel point; and the compensation values are applied to the display panel driving circuit, so that accurate compensation of the Mura phenomenon is realized. According to the method, the brightness and chrominance of the Mura data are automatically analyzed, the optimal compensation target value is determined, accurate compensation of the pixel level can be achieved through support of the Mura data and a compensation algorithm, the system can monitor input data of the display panel in real time and adjust the compensation value in real time, expandability is good, and the method is suitable for large-scale popularization and application. And the system can support MicroLED display panels with different sizes and resolution ratios, and the like. The system is mainly composed of a data acquisition processing module and a compensation value preprocessing calculation module.

A display device includes an organic light emitting diode emitting light, an antireflection layer disposed on the organic light emitting diode and preventing reflection of external light incident from an outside, and a thin film encapsulation layer disposed on the antireflection layer.

The invention discloses an LED (Light Emitting Diode) energy-saving street lamp system self-adaptive to an ambient light effect and an illumination adjusting method thereof, and belongs to the technical field of novel illumination control and green energy conservation. The system comprises a light environment sensing module, a traffic flow monitoring module, an LED driving power supply and an electroluminescent illumination module composed of a plurality of light emitting diodes. The main control module is configured to execute active lighting effect decoupling logic, namely, when the electroluminescent lighting module keeps steady-state lighting, the driving power supply is controlled to inject a micro-disturbance modulation signal which cannot be perceived by human vision into output current, and illuminance response data of the light environment perception module are synchronously collected; the road surface reflectivity coupling coefficient is obtained in real time by calculating the change ratio of the response data to the modulation signal, then the reflected light component excited by the street lamp itself is accurately removed from the total illumination value, and the pure environment background illumination is decoupled. The problems of misoperation and energy waste caused by self-luminous interference of a traditional light-operated street lamp are solved.

A display device includes a first pixel circuit disposed on a substrate and a first light-emitting diode electrically connected to the first pixel circuit, the first pixel circuit includes a driving transistor including a driving semiconductor layer and a driving gate electrode, a first initialization transistor including a first initialization semiconductor layer and a first initialization gate electrode and electrically connected to the driving transistor, and a first connection electrode electrically connecting the first initialization semiconductor layer to the driving gate electrode, a semiconductor layer including the first initialization semiconductor layer includes a first extension area extending from a channel area of the first initialization semiconductor layer to the first connection electrode, and the first extension area overlaps a first shield layer disposed under the first initialization semiconductor layer and a second shield layer disposed above the first initialization semiconductor layer.

Sleep-aiding eyewear that prevents light which inhibits melatonin production from reaching the eye is described. The eyewear that is the object of the present disclosure has improved visibility over other methods of cutting off melatonin-inhibiting wavelengths of light, which enables the user to perform tasks, such as reading and typing, uninhibited. This is achieved in some embodiments using a Bragg grating comprising multiple layers of alternating reflective index material as a surface coating on the lens. This may be combined with lens-tinting, or antireflective coatings, in the eyewear. Furthermore, transition lenses which block melatonin-shifting light when there is a suitable external stimulus, such as blue light from a light emitting diode, are described. The presently described filters are also useful for electronic displays and functional light-transmitting materials.

The invention belongs to the technical field of diode clamps, and discloses a light emitting diode processing clamp which comprises a fixing column, a clamping assembly and an adjusting assembly located in the clamping assembly, the clamping assembly is installed on the outer wall of the fixing column, a net rack is installed in the clamping assembly and can ascend and descend in the clamping assembly, and a correcting pipe is installed in the net rack and can ascend and descend in the clamping assembly. The correcting pipe is installed in the adjusting assembly, the aperture of the correcting pipe is gradually increased from the top end to the bottom end, the top end of the correcting pipe is fixedly connected with the bottom end of the net frame, when the clamping assembly rotates downwards, the net frame descends to drive the correcting pipe to synchronously descend, and the correcting pipe corrects the position of the diode. According to the invention, by arranging the correction tube, the inclination of the diode can be prevented, and the correction tube converts the force generated by extrusion into the torsion for the rotation of the light emitting diode, so that when the pin of the diode is inserted into the jack of the PCB, the vertical state of the diode and the PCB can be ensured, the inclination is prevented, and the installation angle of the diode is ensured.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention relates to the technical field of display screen detection, in particular to OLED display screen film pasting bubble detection equipment which comprises a frame body, a conveying mechanism and a detection mechanism are arranged on the frame body, the detection mechanism comprises a cover body and an image acquisition module, and a cleaning sponge is arranged at the bottom of the cover body. A dust collection assembly is arranged on the other side, right opposite to the cleaning sponge, of the cover body, a driving assembly used for driving the cleaning sponge to enter the dust collection assembly is further arranged on the cover body, and a height adjusting mechanism used for adjusting the height of the cover body is arranged on the frame body. The cleaning sponge is used for wiping the surface of the screen film and is matched with the dust collection assembly to regularly clean the screen film and remove dust and tiny particles, it is ensured that the image acquisition module obtains clear images, the screen body completely enters the cover body, the rubber ring makes close contact with the moving plate to form a sealed space, external dust is prevented from entering a detection area, and the detection efficiency is improved. The bubble detection accuracy is improved.

A display apparatus is disclosed that includes a first pixel arranged in a row and an odd column, and a second pixel arranged in the row and an even column. Each of the first pixel and the second pixel includes a light-emitting diode, a first transistor configured to output a current corresponding to a data signal, a second transistor transmitting the data signal to the first transistor, and a distribution transistor connected in series between the second transistor and a data line configured to supply the data signal. While the second transistor of the first pixel and the second transistor of the second pixel are simultaneously activated, the distribution transistor of the first pixel and the distribution transistor of the second pixel are sequentially activated.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The dental handpiece has a handle and a housing with a first light-emitting diode and a first optical sensor. The housing also has a second light-emitting diode, a second optical sensor, shielding windows for each optical and apertures for supplying compressed air to each shielding window. A diffuser is located in each aperture, the diffuser being adapted to generate an air jet forming an air curtain. The dental handpiece can provide a reliable protection of the optical sensors by the air curtain and a high-quality three-dimensional image of an oral cavity during manipulation.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an organic light-emitting device and a display or lighting device comprising the organic light-emitting device. A hole transport layer compound of the device is obtained by taking a phenyl and alkyl fixed substituted fluorenyl structure as a core fragment and taking a benzo five-membered ring and a limited substituted benzene ring as two side chains of amido, and is matched with a limiting material of a light-emitting auxiliary layer to manufacture an OLED (Organic Light Emitting Diode) element; the light-emitting efficiency and the working life of the organic light-emitting device are effectively improved, and the application prospect is very good.

An embodiment relates to a light emitting diode (LED) mask for personal combination stimulation, which is to be worn on a face, and more specifically to an LED mask for personal combination stimulation, which can prevent skin damage due to heat generation caused by light emission in an LED, reduce manufacturing and maintenance costs, and effectively make improvement such as whitening facial skin, reducing wrinkles, in particular, wrinkles around eyes. The LED mask for personal combination stimulation includes a mask unit to be put on the face of a user; and a light irradiation unit installed in the mask unit and including a plurality of LEDs arranged on a substrate, wherein the LEDs comprise multiple types of LED chips to emit light of different wavelengths, and the multiple types of LED chips are configured as a combination LED module in a single support structure and arrange on the substrate.

The invention discloses a light color detection analysis method and system for an LED, and relates to the technical field of LED detection, and the system comprises a light color collection module which is used for obtaining spectrum data generated in the lightening process of a target LED; the time sequence modeling module is used for collecting a plurality of spectral data points at fixed time intervals within a continuous preset time period after the target LED starts to emit light, calculating to obtain a dominant wavelength, a color coordinate and a fitting color temperature value, forming a multi-moment light color parameter sequence, and constructing a time sequence model based on the sequence, and outputting the time sequence model and the corresponding original parameter sequence. According to the method, the change curve of the light intensity and the color coordinates is constructed, and a convergence trend analysis mechanism is introduced, so that the LED light-emitting stable state is automatically judged, wrong judgment caused by unstable early data is effectively avoided, and the representativeness and the accuracy of detection data are improved.

A method for forming a light-emitting device, a non-transitory computer storage medium storing instructions for manufacturing and a light-emitting device that improve the reliability of light-emitting diode (LED) systems. The reliability is improved by: attaching a printed circuit board (PCB) to a heat sink, then attaching a top contact LED to the same heat sink, and electrically connecting the PCB to the LED using conductive elements, such as wires that may be bent upwards or downwards. This comprehensive approach not only ensures efficient heat management and electrical connectivity but also protects and isolates the conductive elements, enhancing the durability and performance of the light-emitting device.

The present disclosure provides an AlGaInP-based red light emitting diode chip and a preparation method thereof, belonging to the field of optoelectronic manufacturing technology. The AlGaInP-based red light emitting diode chip includes: a substrate, a light emitting structure, a distributed Bragg reflector layer, a passivation layer, a first solder block and a second solder block; the light emitting structure, the distributed Bragg reflector layer and the passivation layer are sequentially stacked on the substrate, the passivation layer has a first through hole and a second through hole exposing the distributed Bragg reflector layer, the hole wall of the first through hole and the hole wall of the second through hole have a concave-convex structure; the first solder block is located in the first through hole and is in contact with the hole wall of the first through hole, and the second solder block is located in the second through hole and is in contact with the hole wall of the second through hole. The embodiment of the present disclosure can improve the problem of relative looseness between the solder block and the via hole, so that the light emitting structure is well fixed in the chip, and the reliability of the chip is improved.

The present invention provides a light emitting diode chip comprising a substrate, a plurality of light emitting diodes, a first electrode and a second electrode, the second electrode being at least partially embedded in the substrate such that a bottom end of the second electrode is lower than a bottom end of the plurality of light emitting diodes. In the invention, the second electrode is at least partially embedded into the substrate of the chip, so that the space between the adjacent light-emitting diodes occupied by the second electrode is reduced, the gap between the adjacent light-emitting diodes can be adaptively reduced, and the overall size of the chip is relatively reduced; therefore, the method can be matched with lighter and more portable electronic equipment, and is suitable for more application scenes. The invention further provides a light-emitting diode chip, the top surface of the top semiconductor layer of the light-emitting main body of the diode is arranged to be a non-plane with an optical microstructure, light emitting can be enhanced, diffuse reflection can be increased, the light emitting rate can be improved, and the performance of the light-emitting diode chip can be optimized.

The invention discloses a lightning arrester resistor disc nonlinear conductivity fitting method and system based on a temperature correction coefficient, a medium and equipment, and the method comprises the steps: calculating a current-voltage relation of a lightning arrester according to the volt-ampere characteristic of the lightning arrester and the actual size and material parameters of each component in the lightning arrester, and converting the current-voltage relation into a current density-electric field intensity relation; processing the volt-ampere characteristic interpolation curve in a segmented manner by adopting a logarithm domain processing method and fitting the volt-ampere characteristic interpolation curve; calculating a nonlinear conductivity temperature correction coefficient according to the direct-current reference voltage of the resistor disc of the lightning arrester at different temperatures; calibrating the reference point of the temperature correction coefficient to obtain an equivalent nonlinear conductivity curved surface based on the temperature correction coefficient; performing goodness-of-fit calculation on the obtained equivalent nonlinear conductivity curved surface, and if the goodness-of-fit is relatively high, outputting the equivalent nonlinear conductivity; and if the goodness of fit is relatively low, performing segmentation fitting on the volt-ampere characteristic curve again until the goodness of fit of the equivalent nonlinear conductivity curved surface is relatively high.

The invention discloses an optical interconnection system which comprises a light source, a transmission medium and a photoelectric detector. The light source adopts a micro resonant cavity light-emitting diode array, and the transmission medium adopts a multi-core plastic optical fiber. An optical signal output by the micro resonant cavity light emitting diode array is transmitted to the photoelectric detector through the multi-core plastic optical fiber and is converted into an electric signal through the photoelectric detector. The light source of the optical interconnection system provided by the embodiment of the invention adopts the micro resonant cavity light-emitting diode array, the transmission medium adopts the multi-core plastic optical fiber, and good balance among low power consumption, high stability and high parallelism can be achieved through component optimization.

The invention provides an optical sensing measurement method based on closed-loop adjustment of LED driving, and relates to the technical field of optical sensing. The method comprises the following steps: initializing a system; the microcontroller reads a current value of the analog-to-digital converter and calculates an error; calculating a new set value of the driving current of the light emitting diode according to the error; the microcontroller outputs the new set value to the digital-to-analog converter, the digital-to-analog converter controls the driving circuit to adjust the driving current of the light emitting diode, and after a preset time period, the current value of the analog-to-digital converter is collected; repeating the steps, when the error absolute value is smaller than a preset threshold value, judging that closed-loop convergence occurs, and recording the driving current at the moment and the current value of the analog-to-digital converter as measurement results; and obtaining the sample concentration according to the calibration curve and the driving current in the measurement result. According to the scheme, the dynamic range and the low-concentration precision are remarkably improved, LED aging and temperature excursion are inhibited, the circuit is simplified, and multiple groups of current-limiting resistors and multi-gear change-over switches are not needed.

The invention provides a micro light emitting diode chip, comprising a micro mesa array comprising a plurality of micro mesas; the light emitting diode is characterized in that each micro-mesa comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer which are sequentially stacked from bottom to top; the first type is different from the second type; the bottom metal layer is located at the bottom of the micro mesa; the bottom dielectric layer is located at the bottom of the bottom metal layer; the bottom dielectric layer is provided with a groove; the first bottom contact hole is located in the bottom dielectric layer and located at the bottom of the bottom metal layer, and the first bottom contact hole is in contact with the bottom metal layer; the side wall dielectric layer is positioned on the side wall of the micro mesa and the side wall of the bottom metal layer; the top conductive layer continuously covers the top surfaces of the micro mesas, the surfaces of the side wall cut-off layers and the areas between the adjacent micro mesas; and the second bottom contact structure is positioned in the groove, is positioned in the bottom dielectric layer between the adjacent micro mesas, and is not in contact with the bottom metal layer.

The invention provides an epitaxial wafer of a high-luminous-efficiency infrared light-emitting diode and a manufacturing method of the epitaxial wafer. The epitaxial wafer comprises a GaAs substrate, an N-type semiconductor structure, a quantum well active region and a P-type semiconductor structure, wherein the N-type semiconductor structure, the quantum well active region and the P-type semiconductor structure are formed on the substrate. The N-type semiconductor structure comprises an N-type AlGaAs stacking layer, diethyl tellurium (DETe) and disilane (Si2H6) are adopted for co-doping, the N-type semiconductor structure is designed to be of a superlattice structure, and the doping concentration in the vertical direction is periodically alternated from high to low; and a doping concentration gradient is arranged at a position close to the quantum well region, so that the tellurium doping concentration is gradually increased. Through the design, the content of carbon impurities in the material and the non-radiative recombination probability are reduced, a better current expansion effect and quantum well stress release are achieved, and the luminous efficiency and performance of an infrared LED are greatly improved.

A light source a backplane including drive circuits formed thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane, and an array of micro-lenses on the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a mesa structure that includes a p-doped semiconductor layer, an n-doped semiconductor layer, an active region between the p-doped semiconductor layer and the n-doped semiconductor layer, and a dielectric layer underneath the p-doped semiconductor layer or the n-doped semiconductor layer and surrounding the active region. In some embodiments, the center of the active region of a micro-LED of the array of micro-LEDs is horizontally offset from the center of the mesa structure of the micro-LED and the center of a corresponding micro-lens of the array of micro-lenses.

The invention discloses an inverted silver mirror light-emitting diode chip and a preparation method thereof, and relates to the technical field of semiconductors. The inverted silver mirror light-emitting diode chip comprises a substrate, an epitaxial layer, a current expansion layer, a Bragg reflection layer, a metal reflection layer, a first insulating layer, a P-type metal conductive layer and an N-type metal conductive layer, the epitaxial layer comprises an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer; the Bragg reflection layer is provided with a Bragg reflection layer P-type through hole, the first insulating layer is provided with a first insulating layer P-type through hole, and the included angle beta between the hole wall of the first insulating layer P-type through hole and the horizontal plane is smaller than the included angle alpha between the hole wall of the Bragg reflection layer P-type through hole and the horizontal plane; the distance L between the projection edge of the P-type through hole of the first insulating layer and the projection edge of the P-type through hole of the Bragg reflection layer is 5 [mu] m-12 [mu] m. According to the invention, the structure of the flip silver mirror light-emitting diode chip is improved, so that the capability of the flip silver mirror light-emitting diode chip for resisting large current can be improved.

Light-emitting diode (LED) devices and, more particularly, LED packages with individually adjustable pulse width modulation (PWM) signals and related methods are disclosed. LED devices, such as LED packages, with variable PWM signals include the ability to provide one or more of PWM phase control, PWM period count control, controllable blanking times, and intra-blanking signaling. LED packages are configured for receiving and transmitting digital communication signals. An integrated active electrical element within each LED package is configured to drive the LED chip by PWM while providing such variable PWM relative to other LED packages to more evenly distribute power draws and capacitance requirements in corresponding systems.