29469 results about "Ultraviolet" patented technology

An ultraviolet laser apparatus having a single-wavelength oscillating laser generating laser light between an infrared band and a visible band, an optical amplifier for amplifying the laser light, and a wavelength converting portion converting the amplified laser light into ultraviolet light using a non-linear optical crystal. An exposure apparatus transfers a pattern image of a mask onto a substrate and includes a light source having a laser apparatus emitting laser light having a single wavelength, a first fiber optical amplifier for amplifying the laser light, a light dividing device for dividing or branching the amplified laser light into plural lights, and second fiber optical amplifiers for amplifying the plural divided or branched lights, respectively, and a transmission optical system for transmitting the laser light emitted from the light source to the exposure apparatus.

An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

A white light emitting lamp is disclosed comprising a solid state ultra violet (UV) emitter that emits light in the UV wavelength spectrum. A conversion material is arranged to absorb at least some of the light emitting from the UV emitter and re-emit light at one or more different wavelengths of light. One or more complimentary solid state emitters are included that emit at different wavelengths of light than the UV emitter and the conversion material. The lamp emits a white light combination of light emitted from the complimentary emitters and from the conversion material, with the white light having high efficacy and good color rendering. Other embodiments of white light emitting lamp according to the present invention comprises a solid state laser instead of a UV emitter. A high flux white emitting lamp embodiment according to the invention comprises a large area light emitting diode (LED) that emits light at a first wavelength spectrum and includes a conversion material. A plurality of complimentary solid state emitters surround the large area LED, with each emitter emitting light in a spectrum different from the large area LED and conversion material such that the lamp emits a balanced white light. Scattering particles can be included in each of the embodiments to scatter the light from the emitters, conversion material and complimentary emitters to provide a more uniform emission.

Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit; a reaction chamber disposed under the UV lamp unit; a gas ring with nozzles serving as a first electrode between the UV lamp unit and the reaction chamber; a transmission window supported by the gas ring; an RF shield which covers a surface of the transmission window facing the UV lamp unit; a second electrode disposed in the reaction chamber for generating a plasma between the first and second electrodes; and an RF power source for supplying RF power to one of the first or second electrode.

A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit having at least one dielectric barrier discharge excimer lamp which is constituted by a luminous tube containing a rare gas wherein an inner surface of the luminous tube is coated with a fluorescent substance having a peak emission spectrum in a wavelength range of 190 nm to 350 nm; and a reaction chamber disposed under the UV lamp unit and connected thereto via a transmission window.

Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

A UV irradiation apparatus for treating substrates includes: at least two process stations each provided with a UV transmissive window; at least one electric UV lamp using two electrodes in a gas tube extending over the UV transmissive windows of the process stations aligned along the gas tube and shared by the process stations; a UV transmissive zone disposed between the UV lamp and the process stations and provided with reflectors; and shutters for blocking UV light from being transmitted to the respective process stations independently.

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to ultraviolet (UV) radiation. Following the UV exposure, the dielectric film is exposed to IR radiation.

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

A camera with multiple lenses and multiple sensors wherein each lens/sensor pair generates a sub-image of a final photograph or video. Different embodiments include: manufacturing all lenses as a single component; manufacturing all sensors as one piece of silicon; different lenses incorporate filters for different wavelengths, including IR and UV; non-circular lenses; different lenses are different focal lengths; different lenses focus at different distances; selection of sharpest sub-image; blurring of selected sub-images; different lens/sensor pairs have different exposures; selection of optimum exposure sub-images; identification of distinct objects based on distance; stereo imaging in more than one axis; and dynamic optical center-line calibration.

Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by a critical dimension (CD) and a roughness; following the preparing the pattern, performing a CD shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the CD shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.

The present invention is an industrial waste water microwave electrodeless ultraviolet photocatalysis-dual membrane separation coupling treatment device, the device mainly consists of a reactor (1), a membrane separation system (2), a microwave electrodeless ultraviolet light source system (4), an aeration system, and an ozone tail gas decomposition device (7) connected to the reactor, and an inlet and outlet water system, wherein: the upper and lower parts of the reactor are respectively the reaction zone and the aeration zone, which are separated by a water distribution plate (5); the membrane separation system The microwave electrodeless ultraviolet light source system is located in the reaction zone and is separated by a corrugated partition (3); the aeration system is composed of a microporous aeration head (6) and a blower (8), and the microporous aeration head is located in the aeration At the bottom of the zone, the blower sends air to the aeration zone through the air duct. The invention has the characteristics of high reaction rate, complete degradation of organic matter, long-term operation and the like, and has strong operability and high safety. It is suitable for the treatment of refractory organic industrial wastewater, and it is also suitable for sterilization and disinfection in the field of water supply.