329 results about "Excimer" patented technology

The object of this invention is to prevent surface discharge even when a high voltage is applied in a dielectric-barrier discharge lamp or a capacitively coupled high frequency discharge lamp with no electrodes in a discharge space. Ribbon foil electrodes 3 are embedded in the wall of a quartz discharge vessel 1. The discharge vessel 1 is disposed such that the foil electrodes 3 face each other on both sides of the axis of the quartz discharge vessel 1. It may be disposed such that the foil electrodes 3 have a truncated V-shaped cross-section. The single tube quartz discharge vessel 1 is filled with discharge gas to form excimer molecules by dielectric barrier discharge or capacitively coupled high-frequency discharge.

A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011 / cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.4 eV than that of the first light emitting layer 312.

A sub-310 nm lithography radiation source includes first and second beam generating modules for generating first and second pulsed beams, a beam combiner optic for producing a single combined beam from the first and second pulsed beams, and optics for directing each of the first and second pulsed beams to be incident upon the beam combiner.

A method and system for fabricating a layer of an organic light emitting device using pulsed laser deposition is provided. A pulsed laser source is used in the method for depositing an organic or coordination complex solid sample on a substrate. A plurality of coherent light wavelengths tuned at different frequencies from the laser and directed through an optical inlet of a vacuum chamber strike a sample to form a volatized sample for depositing on a substrate. Pulsed laser sources used in the method and system include YAG, excimer, alexandrite or combinations thereof. The system includes a pulsed laser source, a vacuum chamber, and an optical inlet for receiving at least two coherent light wavelengths tuned at different frequencies from a pulsed laser source. Alternative methods of deposition may also be performed within the same vacuum chamber.

A deposition apparatus and method for continuously depositing a polycrystalline material such as polysilicon or polycrystalline SiGe layer on a mobile discrete or continuous web substrate. The apparatus includes a pay-out unit for dispensing a discrete or continuous web substrate and a deposition unit that receives the discrete or continuous web substrate and deposits a series of one or more thin film layers thereon in a series of one or more deposition or processing chambers. In a preferred embodiment, polysilicon is formed by first depositing a layer of amorphous or microcrystalline silicon using PECVD and transforming said layer to polysilicon through heating or annealing with one or more lasers, lamps, furnaces or other heat sources. Laser annealing utilizing a pulsed excimer is a preferred embodiment. By controlling the processing temperature, temperature distribution within a layer of amorphous or microcrystalline silicon etc., the instant deposition apparatus affords control over the grain size of polysilicon. Passivation of polysilicon occur through treatment with a hydrogen plasma. Layers of polycrystalline SiGe may similarly be formed. The instant deposition apparatus provides for the continuous deposition of electronic devices and structures that include a layer of a polycrystalline material such as polysilicon and / or polycrystalline SiGe. Representative devices include photovoltaic devices and thin film transistors. The instant deposition apparatus also provides for the continuous deposition of chalcogenide switching or memory materials alone or in combination with other metal, insulating, and / or semiconducting layers.

The invention is directed to improved coated metal fluoride single crystal optical elements suitable for use in below 250 nm optical lithography, and particularly below 200 nm lithography. The coated elements of the invention can be lenses, windows, prisms and other elements used in lithographic methods, including the laser sources used therein. The invention is also directed to a method of removing the quasi-Bielby layer formed when a shaped optical element is polished. Removal of the quasi-Bielby layer prior to coating results in improved durability and optical transmission characteristics of the coated lenses. The coating material can be any material that does not impede the transmission of below 250 nm electromagnetic radiation. Fluorine doped silicon dioxide is the preferred coating material.

A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.4 eV than that of the first light emitting layer 312.

Compositions and systems are provided for the high efficiency quenching small water-soluble oligomers, or oligofluors, of from about 1-10 kd in size, where the oligofluors comprise multiple excimeric or exciplex forming fluorophores arranged on a scaffold, which are efficiently quenched by a quencher entity linked to the oligomer through a cleavable moiety. Fluorophores of interest include, without limitation, aromatic fluorophores such as pyrenes, e.g. benzopyrene, perylene, pyrene, etc. In some embodiments the oligofluor / quencher combination provides for a Stern-Vollmer constant (KSV) of greater than about 106 M−1, and may be greater than about 107 M−1, greater than about 108 M−1, or more. In some embodiments of the invention, the scaffold is a phosphodiester / glycoside backbone, e.g. an analog of a polynucleotide. The system of oligofluors and quenchers can be used in qualitative and quantitative screening and detection methods to detect any enzymatic, chemical or catalytic activity that can cleave the moiety between the quencher and scaffold.

The invention discloses a nanolithography method and a nanolithography device in the technical field of nanolithography. The device comprises a femtosecond laser device, a light transmittance base plate, a photoetching mask plate, photoresist and a substrate. A specific super-diffraction limit graph is formed on the photoetching mask plate through the femtosecond laser device; a plasma excimer excitation structure on the upper surface of the photoetching mask plate is changed, and an exposure wavelength is adjusted by controlling the material of the photoetching mask plate, so that the shape, the distribution and the size of the super-diffraction limit graph can be controlled; moreover, a two-photon absorption phenomenon of the photoresist is introduced; and the line width of an exposure graph of the photoresist is controlled by controlling the power of a femtosecond laser exposure light source.

The purpose of the present invention is to provide an organic electroluminescent element having uniform surface luminescence, large luminescence intensity, and excellent stability over repeated use. The present invention provides a method of manufacturing an organic electroluminescent element using a positive electrode irradiated by excimer light when manufacturing an organic electroluminescent element comprising at least a substrate on which is sequentially formed a positive electrode, organic layer including an organic luminescent layer, and negative electrode, and an organic electroluminescent element manufactured by said method.

A Group III nitride compound semiconductor thin film which can be deposited on any given substrate to have uniform film quality and excellent crystalline, and a deposition method thereof. A semiconductor device and a manufacturing method thereof. A poly-crystalline Group III nitride compound thin film is deposited on a substrate by sputtering at a deposition rate of 15 to 200 nm / hour using a Group III nitride compound target in a plazma atmosphere of gas comprising 10 mole % or more nitrogen. Then, the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate is irradiated with an excimer pulsed laser with an energy density of about 200 mJ / cm2, in an atmosphere of gas with an oxygen content of 2 mole % or less. Thereby, lattice defects such as grain boundaries or dislocations which occur in the thin film are removed.

The invention discloses a minitype array filter based on metal surface plasma excimer. A plurality of array units are provided on an optical substrate, a sub-wavelength hairline is set between the array units and a plurality of linear grid grooves of incidence plane, or emergence plane or incidence plane and emergence plane which are symmetrically distributed are set at the two sides of the sub-wavelength hairline in a space, wherein the distance of the linear grid groove is same to the width thereof. The invention has features: simple technique, compactness, and can be connected with the LED, photosensitive detection, optical imaging sensor to form a variety of filters and imaging spectrometer of sub-wavelength, with high resolution, high integrity and wide application foreground in photo etching, high density data storage, near-field optics, space exploration, and medical diagnosis. The minitype array filter can be used in microwave, infrared and visible light band.

An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

Polyimide substrates, and polymer laminates for optical and electronic applications are described. Single or multi-layer waveguide structures are deposited on the polyimide substrates. Laminates including polymer or a hybrid organic / inorganic waveguiding film can be deposited on a polished polyimide substrate. The laminate can also include piezoelectric and metallic layers. Micromachined optical devices, such as cantilevered waveguide are fabricated by laser ablation using a combination of IR and UV lasers. A fiber-to-waveguide coupler with a laser-machined groove for holding the fiber is also disclosed. Holes are drilled with excimer and YAG laser in the polyimide substrate and metallized to provide continuous electrical contact between both sides of the substrate. Metallized polyimide substrates are bumped and stacked to provide high density interconnects. The polyimide substrate is bonded to a semiconductor wafer. Thin SOI or epitaxially grown layer with devices is transferred to the polyimide substrate by grinding and etching the semiconductor wafer.

The invention is directed to improved coated metal fluoride single crystal optical elements suitable for use in below 250 nm optical lithography, and particularly below 200 nm lithography. The coated elements of the invention can be lenses, windows, prisms and other elements used in lithographic methods, including the laser sources used therein. The invention is also directed to a method of removing the quasi-Bielby layer formed when a shaped optical element is polished. Removal of the quasi-Bielby layer prior to coating results in improved durability and optical transmission characteristics of the coated lenses. The coating material can be any material that does not impede the transmission of below 250 nm electromagnetic radiation. Fluorine doped silicon dioxide is the preferred coating material.

A line-narrowed excimer or molecular fluorine laser system includes a discharge chamber filled with a gas mixture at least including molecular fluorine and a buffer gas, multiple electrodes within the discharge chamber connected to a discharge circuit for energizing the gas mixture, a resonator including a pair of resonator reflecting surfaces disposed on either side of the discharge chamber for generating a laser beam, and a line-narrowing / selection unit within the resonator for narrowing the bandwidth of the laser beam. The resonator further includes a third reflecting surface which is deformable and disposed between the pair of resonator reflecting surfaces. The line-narrowing / selection unit preferably includes a beam expander and a dispersive element, wherein the deformable third reflecting surface is disposed between the beam expander and the dispersive element.

The invention belongs to the technique field of detonating equipment, the invention mainly relates to exciting equipment of detonator and detonator made by the equipment. The exciting equipment Comprises an open shell which is like a barrel, the surface of the shell is interference fit with inwall of the shell. It is filled with high explosive, amorce, igniting primer or delayed element, the height of high explosive layer, amorce layer, igniting primer or delayed element is separately 0.5~2 times ,0.25~2 times and 1~6 times of the external diameter of the shell. Charge density of the high explosive layer is 0.4~1.2 g / cm3, and charge density of the amorce layer is 0.5~2.5 g / cm3. Igniting primer or delayed element compromises a piece of metal whose shape is like a column. The surface of the metal is interference fit with inwall of its exteriority, there is a through hole inside the metal, else fill delayed explosive. The invention regards the exciting equipment as an individual element. It benefits to concentrating on producing and to dispersal use, it also benefits to industrial production continuously, moreover, many kinds of high-safety detonator according to its different use.

A method of manufacturing an optical film by a solution casting method, in which a poor peeling region of a metal support can be eliminated by casting a dope on the surface of the metal support after a surface treatment film is formed on the surface of the metal support by atmospheric pressure plasma treatment or excimer UV treatment. Consequently, limitation on the conditions of film production is reduced and productivity is enhanced. Furthermore, since peeling of the film is enhanced, lateral variation in peeling position is reduced and variation in retardation value is reduced sharply, and thereby an optical film having optical characteristics excellent in transparency and flatness can be manufactured. Consequently, a method for manufacturing an optical film, an optical film, a polarizing plate and a display device which meet the demands of a high quality thin and wide protective film for polarizing plate can be provided.

A system and associated method are disclosed for analyzing a sample or sample component including species capable of producing fluorescent light when excited by a light source, where the light source comprises an excimer light source having a high voltage power supply with voltage and current regulation circuitry.

An electroluminescent (EL) device which has a light emitting layer including metal nanoparticles coated with an organic layer. The metal nanoparticles coated with the organic layer selectively remove an absorption band appearing at an excimer level without affecting a maximum absorption or emission wavelength, thereby enhancing the color purity and emission efficiency of the EL device.

Polyimide substrates, and polymer laminates for optical and electronic applications are described. Single or multi-layer waveguide structures are deposited on the polyimide substrates. Laminates including polymer or a hybrid organic / inorganic waveguiding film can be deposited on a polished polyimide substrate. The laminate can also include piezoelectric and metallic layers. Micromachined optical devices, such as cantilevered waveguide are fabricated by laser ablation using a combination of IR and UV lasers. A fiber-to-waveguide coupler with a laser-machined groove for holding the fiber is also disclosed. Holes are drilled with excimer and YAG laser in the polyimide substrate and metallized to provide continuous electrical contact between both sides of the substrate. Metallized polyimide substrates are bumped and stacked to provide high density interconnects. The polyimide substrate is bonded to a semiconductor wafer. Thin SOI or epitaxially grown layer with devices is transferred to the polyimide substrate by grinding and etching the semiconductor wafer.

The stability of a gas discharge in an excimer or molecular fluorine laser system can be improved by generating multiple discharge pulses in the resonator chamber, instead of a single discharge pulse. Each of these discharges can be optimized in both energy transfer and efficient coupling to the gas. The timing of each discharge can be controlled using, for example, a common pulser component along with appropriate circuitry to provide energy pulses to each of a plurality of segmented main discharge electrodes. Applying the energy to the segmented electrodes rather than to a standard discharge electrode pair allows for an optimization of the temporal shape of the resulting superimposed laser pulse. The optimized shape and higher stability can allow the laser system to operate at higher repetition rates, while minimizing the damage to system and / or downstream optics.

The invention discloses a temperature stabilizing and controlling system of a laser. The temperature stabilizing and controlling system of the laser comprises a first temperature sensor, a second temperature sensor, a third temperature sensor, a fourth temperature sensor and a fifth temperature sensor, wherein the first temperature sensor is located at the position of an air outlet in a discharge area inside a cavity body of a discharge cavity of the laser, the second temperature sensor is located at the position of an air inlet in the discharge area inside the cavity body of the discharge cavity, the third temperature sensor is located on the inner wall of the cavity body, the fourth temperature sensor is located in a water outlet pipeline of a heat exchange system, and the fifth temperature sensor is located in a water outlet pipeline of a cooling system of the cavity body. The first temperature sensor, the second temperature sensor, the third temperature sensor, the fourth temperature sensor and the fifth temperature sensor are respectively used for detecting temperature of the air outlet in the discharge area, the air inlet in the discharge area in the discharge cavity, the cavity body of the discharge cavity and cooling water in the water outlet pipelines, and are connected with an automatic digital recording and control (ADRC) through lines so that temperature signals detected by the temperature sensors are sent to the ADRC. The ADRC is used for controlling flow regulating valves on water inlet pipelines of the heat exchange system and the cooling system of the cavity body according to the temperature signals, and for controlling an electric heater, so that controlling on the laser is achieved. According to the temperature stabilizing and controlling system of the laser, temperature stability of an excimer gas laser system is improved.

The invention relates to a deep-ultraviolet light-emitting diode structure. Wherein, said structure uses plasma excimer effect; the surface plasma excimer is the oscillating wave formed by coupled optical field and carrier at the surface of conductor; the activation and couple of surface plasma excimer are realize by metal film with periodical structure; and the metal film has electrode contact function; and the metal part of common MIS light-emitting diode uses periodical structure generating surface plasma excimer.

A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.

The joining apparatus includes a suction nozzle for holding an electronic component, a board stage for holding a circuit board in opposition to the electronic component, and an excimer ultraviolet lamp placed at an irradiation position between the positioned electronic component and circuit board. In such a joining apparatus, ultraviolet irradiation to Au bumps of the electronic component and ultraviolet irradiation to board electrodes of the circuit board are performed concurrently by the excimer ultraviolet lamp to execute cleaning process of the two metallic portions. Thereafter, ultrasonic vibrations are imparted to the two metallic portions while those metallic portions are kept in contact with each other, by which metal joining between the two metallic portions is fulfilled.

The invention discloses a medium loaded surface plasmon excimer optical waveguide with low transmission loss and stronger light-field limiting ability. In the invention, the cross section of the waveguide structure comprises a metal basal layer (1), a high refractive index medium region (3) located on the metal basal layer, a low refractive index medium region (2) surrounded by the high refractive index medium region and the metal basal layer and a cladding (4), wherein the light-field distribution range of the waveguide structure can be obviously reduced by the high refractive index medium region on the metal basal layer so that the two-dimensional sub-wavelength constraint to a transmission light field is realized; and in the meantime, as the existence of the low refractive index medium region, the lower transmission loss of the waveguide can be maintained. By means of the optical waveguide structure, the contradiction of the light-field limiting ability and the transmission lost of a conventional medium loaded surface plasmon excimer optical waveguide is overcome and an ultrahigh integration level optical waveguide chip is possible to realize.

A device for generating ultraviolet radiation by means of an excimer discharge, which device is equipped with an at least partly UV-transparent discharge vessel whose discharge space is filled with a gas filling, with means for triggering and maintaining an excimer discharge in the discharge space, and with a luminescent material that contains a phosphor comprising a host lattice of general formula (Y1-x-y-z,Lux,Scy,Az)PO4 wherein 0≦x<1 and 0<y≦1 and 0≦z<0.05 and A is an activator selected from the group of bismuth, praseodymium and neodymium is useful for disinfection and purification of fluids and surfaces and provides improved germicidal action. The invention also relates to a UVC-phosphor comprising a host lattice of general formula (Y1-x-y-z,Lux,Scy,Az)PO4 wherein 0≦x<1 and 0<y≦1 and 0≦z<0.05 and A is an activator selected from the group of bismuth, praseodymium and neodymium comprising a improved emission spectrum. Such UV-C phosphors show a high quantum efficiency (>80%) and a strong absorption of 170 to 190 nm radiation. These phosphors emit UV-C radiation comprising a broadened band in the wavelength range between 225 and 275 nm.

A series of functionalized imidazophenthridine analogue-based blue phosphorescent emitters have been designed, where bulky substituents (e.g., tetrabutyl, phenyl, mesityl, triisopropylbenzene, etc.) are introduced on an imidazophenthridine fragment of the emitters. Bulky substituents may suppress potential excimer formation, as well as improve the solubility of the complexes. This class of emitters may be utilized in luminescent labels, emitters for organic light emitting devices, and lighting applications.