High efficiency deep ultraviolet light-emitting diode

A light-emitting diode, deep ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as P-type conduction difficulties, and achieve the effects of increasing luminous efficiency, improving luminous efficiency, and improving reliability.
CN1921157AInactive Publication Date: 2007-02-28INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2007-02-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a deep-ultraviolet light-emitting diode structure. Wherein, said structure uses plasma excimer effect; the surface plasma excimer is the oscillating wave formed by coupled optical field and carrier at the surface of conductor; the activation and couple of surface plasma excimer are realize by metal film with periodical structure; and the metal film has electrode contact function; and the metal part of common MIS light-emitting diode uses periodical structure generating surface plasma excimer.
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Description

technical field

[0001] The invention relates to the technical field of light-emitting diodes, in particular to a MIS (metal-insulator-semiconductor structure) deep ultraviolet (UV) light-emitting diode (LED) structure that utilizes the plasmon effect to improve the quantum efficiency of light emission. Background technique

[0002] Deep ultraviolet (UV) light-emitting diodes (LEDs) are widely used in lighting, high-density optical storage, environmental treatment and detection, biology, and medicine.

[0003] The most mature semiconductor materials used in deep ultraviolet light-emitting diodes are AlGaN (3.4-6.2ev) and AlInGaN (energy band range 0.7-6.2ev) systems, and the ZnMgO (energy band range 3.3-7.8ev) system is still in the development stage. These two materials (AlInGaN and AlGaN are actually a material system, collectively referred to as AlGaN hereinafter) both face the extremely difficult problem of P-type doping. The P-type doping of GaN materials is not easy. W...

Claims

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