10788results about "Laser details" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention discloses a repetition-frequency-adjustable high-energy nanosecond laser and a working method thereof, and belongs to the technical field of lasers. The laser comprises a synchronizing signal controller, a nanosecond seed source, an electro-optical selection system, a first end face pumping amplification stage, a second end face pumping amplification stage and a side face pumping bi-pass amplification stage, the synchronizing signal controller is adopted to generate a clock reference signal, a frequency division synchronizing signal and a clock synchronizing signal, and integrated control over system signals is achieved. The clock reference signal is used for triggering the seed source to generate nanosecond seed light pulses, the frequency division synchronizing signal is optimized and adjusted to control the electro-optical menu system to screen out frequency division seed light pulses, and the repetition frequency of the seed light pulses is adjustable. Meanwhile, a pulse pumping mode MOPA structure is adopted, the repetition frequency of each amplification stage pumping light pulse and the repetition frequency of the non-frequency-divided seed light pulse are kept consistent through a clock synchronization signal, it is ensured that the heat effect of the whole system is stable, and repetition frequency adjustable nanosecond laser output with high energy and good reliability is achieved.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top surface HR reflecting film, which comprises a gain chip, a first high-reflection HR film is plated on the left end surface of the gain chip, and a first anti-reflection AR film is plated on the right end surface of the gain chip. A metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Performance test is carried out on the laser provided by the invention, and test results show that the line width is 0.6 kHz, the SMSR is 63dB, and the threshold current is 22mA, thereby verifying the effectiveness of the laser provided by the invention.

A pest control system is disclosed comprising an optical, computational, and monitoring subsystem, optionally mounted on a mobile platform. The optical system may include a neutralizing laser or multi-wavelength light source, discovery and detail cameras (optionally stereo), a beam-steering mechanism, tunable focus, and optional thermal or depth sensors. The processor, such as a GPU or FPGA, identifies insect or biological targets, adjusts laser focus by depth, and controls beam activation. A monitoring system verifies safety by detecting humans or other non-target entities using environmental and thermal cameras; if detected, laser firing is inhibited. The mobile platform may use wheels, propellers, tracks, or cables, with GPS and data links for remote control. A visible light pre-flash may induce a blink reflex before firing. In some embodiments, a scouting drone transmits target coordinates to the neutralization unit, enabling coordinated, efficient, and safe laser-based pest control.

The invention discloses a temperature control and noise reduction method for an analog optical module, and relates to the technical field of data processing. The method comprises the following steps: collecting and preprocessing an original temperature signal, environment temperature time sequence data and an optical wavelength original detection value of an optical module; improving the LSTM model, constructing a junction temperature dynamic prediction model, and outputting prediction data; a pre-trained BP neural network is utilized to calculate the temperature compensation amount according to the real-time wavelength offset, and a PPO reinforcement learning algorithm is adopted to optimize with the temperature stability, the wavelength offset and the TEC power consumption as multiple targets to obtain an optimal PID parameter mapping table; and finally, predicting, compensating and optimizing parameters are fused, and control output for driving the TEC is generated through a multi-mode intelligent decision. The problems of insufficient control precision and response lag are effectively solved, cooperative high-precision control over the junction temperature and the emission wavelength of the laser is achieved, transmission noise is remarkably reduced, and meanwhile system energy consumption and the self-adaptive capacity are considered.

The invention discloses a laser control system and a spectral analysis system. The laser control system comprises an ARM module and a laser control module, the laser control module comprises a TEC module and a DA module; the TEC module is in communication connection with the ARM module, when the laser is started to work, the ARM module judges whether the detected laser shell temperature is within a preset range, if the detected laser shell temperature is within the preset range, the TEC module does not work, otherwise, the ARM module controls the TEC module to start to work until the TEC module reaches a preset target temperature, and stable work is kept; and the DA module is in communication connection with the ARM module, an LD current feedback circuit is arranged in the DA module, the ARM module calculates the error between the current power and the target power according to the current data acquired by the LD current feedback circuit, and then the DA module is driven to adjust the output power of the laser in real time, so that the laser stably operates near the target power. And the power loss of the laser is effectively reduced.

The invention relates to the technical field of laser adjustment, in particular to a semiconductor laser module leveling device and a use method thereof, and the device comprises a laser offset detection module, an offset calculation module, an interference measurement analysis module, a driving compensation execution module and an error compensation optimization module. According to the invention, the light spot center position of the semiconductor laser module is precisely monitored and compared with the target position, and the position deviation between the light spot and the target is recorded and calculated in real time, so that the laser alignment precision can be improved, the position of the laser module is adjusted by utilizing the precise movement of the micropositioner, and the transmission effect of the laser beam is further optimized; according to the method and the device, errors caused by tiny movement or external changes of the device are reduced, the cooperative work efficiency among a plurality of laser modules is remarkably improved by comprehensively analyzing adjusted data and optimizing an error compensation strategy, high-quality laser output and application effects are ensured, and the yield and the research precision can be remarkably improved.

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

The invention belongs to the field of laser plasmas, and discloses a device and a method for generating an extreme ultraviolet (EUV) super-continuum light source with luminous efficiency at a 10-20nm waveband, which can be used for quantity detection in advanced semiconductor manufacturing. The device comprises a vacuum pump set, a vacuum chamber, a target material, an EUV spectral measurement system, a laser, a half-wave plate and polarizer combination, a focusing lens and a beam expanding lens, the vacuum pump is used for pumping air to enable the vacuum chamber to keep a proper vacuum degree, and the target material is irradiated by laser to generate plasma to emit supercontinuum radiation of 10-20 nm. According to the invention, after spectral radiation energy and laser-EUV radiation conversion efficiency are quantified through an EUV spectral measurement system and a radiation calibration and energy calculation method, focusing spot sizes with optimal luminous efficiency under different laser wavelengths, laser pulse time and laser energy are obtained, and finally, the maximum luminous efficiency of different laser parameters in a 10-20nm wave band is realized.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000 / mm2.

The invention discloses a micro-cavity optical comb frequency stabilization system based on a saturated absorption spectrum and a CPT effect, and belongs to the field of micro-cavity optical combs and wavelength frequency stabilization. The device comprises a microcavity optical comb module, a pump light source module, a saturated absorption spectrum frequency stabilization module and a CPT frequency stabilization module. The pump light module comprises a pump laser and an optical amplifier. The saturated absorption spectrum frequency stabilization module comprises an atomic gas chamber physical system and a light path used for achieving the saturated absorption effect. Micro-cavity optical comb excitation is achieved through a thermal tuning method, a sideband is generated by modulating pump light, decoupling of micro-cavity optical comb repetition frequency and micro-cavity optical comb pump light is achieved based on the micro-cavity injection locking principle, and the micro-cavity optical comb repetition frequency is equal to alkali metal atom ground state hyperfine energy level frequency difference. The CPT frequency stabilization module comprises an atomic air chamber physical system, the CPT effect is excited through microcavity optical comb pump light and sideband light of the microcavity optical comb pump light, and the repetition frequency of the microcavity optical comb is referred to the atomic transition frequency. Two degrees of freedom of the micro-cavity optical comb are stabilized based on the saturated absorption spectrum and the CPT effect, so that frequency stabilization of the micro-cavity optical comb is realized.

The invention relates to the technical field of laser, in particular to a dual-wavelength narrow-linewidth laser output device and method.The dual-wavelength narrow-linewidth laser output device comprises a semiconductor laser unit emitting linearly polarized light beams, and a light beam conversion lens is used for achieving conversion of semiconductor laser fast-axis light beams and semiconductor laser slow-axis light beams; the light beam conversion lens is used for collimating and compressing a semiconductor laser fast axis divergence angle, and the slow axis collimating lens is used for collimating and compressing a semiconductor laser slow axis divergence angle; the linearly polarized light beam is divided into a first light beam and a second light beam through the rectangular prism; the first light beam sequentially passes through a first volume Bragg grating, a first reflector, a half-wave plate and a polarization beam combiner; the second light beam sequentially passes through a second volume Bragg grating, a second reflector and a polarization beam combiner; the dual-wavelength narrow-linewidth semiconductor laser can solve the problems of precise regulation and control and power amplification of the central wavelength of the dual-wavelength narrow-linewidth semiconductor laser, has power expansibility, and realizes improvement of laser power by stacking a plurality of laser units in the vertical direction.

In one embodiment, a system includes a pump light source configured to produce a pump beam of light at a pump frequency and a Stokes light source configured to produce a Stokes beam of light at a Stokes frequency, where the pump and Stokes frequencies are offset by a frequency offset Ω. The system further includes a photonic integrated circuit (PIC) that includes multiple optical waveguides configured to: direct the pump and Stokes beams of light to a sample; receive a Raman signal produced by coherent Raman scattering of the pump and Stokes beams of light at the sample; and direct the Raman signal to an optical receiver. The optical receiver is configured to detect the Raman signal. The optical receiver includes a probe light source configured to produce a probe beam of light at a probe frequency, an optical detector, and an electronic circuit.

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

The invention discloses a method and a device for inhibiting laser wavelength temperature drift, relates to laser wavelength measurement and laser frequency stabilization, and belongs to the field of atomic physics and quantum optics. The device comprises a laser output light unit, a high-precision wavemeter monitoring unit and a temperature drift feedback control unit. And measuring a wavelength drift coefficient a of environment temperature T environment-laser wavelength lambda. Measuring a set temperature Tset-laser wavelength lambda and a wavelength control coefficient b; and according to the measured coefficients a and b, calculating to obtain a temperature gradient compensation coefficient c (c = a / b). When the laser works normally, the T environment is collected in real time, and the set temperature Tset of the laser is changed according to the temperature gradient compensation coefficient c and the T environment, so that the laser wavelength temperature drift is inhibited. According to the invention, active suppression of laser wavelength temperature drift is realized by regulating and controlling a temperature gradient compensation coefficient. The device has the advantages of being simple in structure, high in wavelength drift suppression capability, low in energy loss and the like.

The invention discloses a self-adaptive full-band efficiency correction method for an LIBS (laser-induced breakdown spectroscopy). The method comprises the following steps: for each laser pulse, inputting collected spectral data into a trained physical information deep network to obtain a current plasma temperature; when the current plasma temperature is not in a preset ideal temperature interval, predicting by using a physical information deep network to obtain an optimal laser energy adjustment sequence; wherein energy adjustment is performed according to the optimal laser energy adjustment sequence, so that a future temperature sequence can be converged to a preset ideal temperature interval; controlling an energy controller of the laser to emit a next laser pulse according to the optimal laser energy adjustment sequence to obtain a stable plasma; and after the stable plasma is obtained, collecting target spectral data, and outputting a full-band efficiency calibration curve according to the target spectral data. And high-precision and high-robustness full-band efficiency correction can be realized in a complex and changeable real environment.

The invention relates to the technical field of semiconductor lasers, in particular to a temperature regulation and control device and method for a semiconductor laser, and the method comprises the steps: obtaining different types of monitoring curves, and analyzing the complex change characteristics of operation temperature and operation power according to the monitoring curves, so as to determine a heat accumulation effect index; determining the degree of efficiency loss caused by the heat accumulation effect by analyzing the correlation among the operation temperature change, the operation power change and the threshold current change and combining the heat accumulation effect index; then determining a temperature regulation and control demand coefficient by analyzing the temperature feedback control precision condition and the thermal dynamic characteristic of the semiconductor laser and combining the efficiency loss degree; and finally, a default proportional gain value in the PID control module is adjusted by using the temperature regulation and control demand coefficient to obtain an adjusted proportional gain value so as to carry out temperature regulation and control on the semiconductor laser, which is beneficial for the temperature regulation and control device to respond to the change of the working environment of the laser in time.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top SiO2 waveguide layer, which comprises a gain chip, the left end face of the gain chip is plated with a first high-reflection HR film, and the right end face of the gain chip is plated with a first anti-reflection AR film; a metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. According to the invention, a temperature change test is carried out, and the wavelength drift is controlled to be + / -0.002 nm in a range of-40 DEG C to 85 DEG C; performance test results show that the line width is 0.6 kHz, the SMSR is 65 dB, and the threshold current is 22 mA.

The invention relates to the technical field of semiconductor laser power supplies, in particular to a semiconductor laser power supply control circuit based on linear constant current and a method thereof. According to the technical scheme, the circuit comprises a voltage follower module, a linear constant-current driving module, a power switch module, a pulse control module, a sampling feedback module and a follow current protection unit. The in-phase input end of an operational amplifier OPA320 of the voltage follower module is connected with external reference voltage # imgabs0 #, the inverted input end of the operational amplifier OPA320 is grounded through a first resistor R1 and connected with the output end through a second resistor R2, and a filter capacitor C1 is connected to the two ends of the second resistor R2 in parallel. Through a linear constant current control and pulse cooperation mechanism, the current stability and the dynamic response speed of the semiconductor laser under the wide-range and high-frequency working condition are remarkably improved, and it is guaranteed that the laser output power is accurate and reliable.

The invention belongs to the field of heat dissipation, and particularly relates to a heat dissipation device for a semiconductor laser, which comprises a semiconductor laser shell and a cover plate arranged on the semiconductor laser shell, and the semiconductor laser shell and the cover plate enclose to form a cooling working medium flowing space; a micro-channel groove is formed in one side, close to the cover plate, of the semiconductor laser shell; a first cooling working medium drainage hole and a second cooling working medium drainage hole are formed in one side, close to the semiconductor laser shell, of the cover plate; and the first cooling working medium drainage hole and the second cooling working medium drainage hole are respectively communicated with a first interface and a second interface which are arranged on the cover plate. Compared with the prior art, the micro-channel groove structure is designed on the back surface of the semiconductor laser shell, so that a cooling working medium flowing path is matched with a heat source which is distributed in a stepped manner, the semiconductor laser is ensured to maintain a relatively low temperature in a working process, the heat dissipation efficiency is remarkably improved, the stability of equipment is improved, and the service life of the equipment is prolonged.

The invention discloses a distributed feedback laser and a preparation method thereof, and relates to the field of lasers. The preparation method of the distributed feedback laser comprises the following steps: forming a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a grating layer, a grating buried layer, a corrosion stop layer, an InP cladding, a barrier gradient layer, a contact layer and a sacrificial layer on a substrate, wherein the sacrificial layer comprises an InP layer and an InGaAs layer which are stacked in sequence; etching to form a ridge waveguide structure; forming an insulating layer; removing the insulating layer in a preset area on the ridge waveguide structure to expose the sacrificial layer; wherein the side wall of the InGaAs layer is completely exposed, and the side wall of the InP layer is partially exposed; and etching to remove the InGaAs layer and the InP layer to form an upper electrode layer and a lower electrode layer. According to the invention, the reliability and the electro-optical conversion efficiency of the distributed feedback laser can be improved.

The invention belongs to the technical field of semiconductors, and particularly relates to a VCSEL laser with a small divergence angle, which comprises a substrate layer, a first Bragg reflector arranged on the substrate layer, an active region arranged on the first Bragg reflector, and a second Bragg reflector arranged above the active region, wherein a current limiting layer for blocking current to enable the current to enter the active area in a concentrated manner is arranged above the active area, a limiting hole for the current and laser to pass through is formed in the current limiting layer, a light emitting area is defined by the limiting hole, and at least one sharp corner is arranged on the limiting hole. On the premise that the equivalent limiting holes are the same, multilateral or irregular limiting holes with sharp-corner outlines are formed through mask pattern design in combination with ion implantation or etching and oxidation processes, so that the high-order film state can be inhibited, and the divergence angle can be reduced.

The invention discloses an optical frequency comb generation method and device based on Brillouin scattering and an electro-optical modulator, and belongs to the field of photoelectric measurement. The method comprises the steps that a first laser and a second laser are used for generating pump light and seed light respectively, multi-wavelength pump light is generated through a cascade electro-optical modulator, the pump light and the seed light are emitted into a Sagnac loop, an optical frequency comb is output through the forward Brillouin scattering effect of an optical fiber and the electro-optical modulator, and the seed light and the pump light are output. The polarization controller is adjusted to optimize polarization state matching of the pump light and the seed light, so that the Brillouin scattering effect reaches the maximum value. The device is composed of a laser, an electro-optical modulator, a signal generator, an optical amplifier, an optical isolator, an optical coupler, a polarization controller and an optical fiber. The optical fiber forward Brillouin scattering effect and the electro-optical modulator are combined, the optical frequency comb giving consideration to the wide frequency spectrum and the narrow interval is generated, meanwhile, the comb tooth interval of the optical frequency comb can be accurately controlled by independently adjusting the frequency of the signal generator, and accurate measurement of signals or objects is achieved.

The present disclosure provides a semiconductor green laser. The semiconductor green laser, from bottom to top, comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The active layer is a quantum well composed of well layers and barrier layers. Each of the well layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. Each of the barrier layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. An electron effective mass of each of the well layers is less than an electron effective mass of each of the barrier layers. A spontaneous polarization coefficient of each of the well layers is less than a spontaneous polarization coefficient of each of the barrier layers.

A vertical-cavity surface-emitting laser (VCSEL) may include a distributed Bragg reflector (DBR) stack. The DBR stack may include a mirror structure over a cavity region. The DBR stack may include an etch stop layer over the mirror structure. The DBR stack may include a grating layer over the etch stop layer. The grating layer may include a grating structure associated with polarization of output light emitted by the VCSEL.

Photonic coupling mechanisms and techniques are described. In one example, a method includes writing a photonic wirebond to at least one optical waveguide to position the photonic wirebond at a first coupling position relative to a crystalline microresonator, injecting optical power into the at least one optical waveguide, determining a number of generated light modes within the crystalline microresonator, and performing a peak search to locate at least one soliton step corresponding to at least one of the generated light modes within the crystalline microresonator.

The invention discloses a laser coaxial beam combining system for improving the repetition frequency of laser pulses, which comprises p polarization pulse lasers, a pulse time sequence controller and n stages of beam combining devices, each stage of beam combining device comprises an s polarization pulse laser, a polarization beam combiner and an electro-optical Q switch, and n is a non-negative integer and is greater than or equal to 1. The invention has the following advantages: a plurality of beams of laser in different polarization states can be combined, the pulse repetition frequency and the output average power of the laser are improved, the optimal pulse energy and peak power are maintained, and coaxial output of pulses in the same polarization state is realized.

The invention relates to the technical field of lasers, and discloses a dynamic thermal focal length controllable module and a disc laser, and the dynamic thermal focal length controllable module comprises a deformable mirror which is arranged on a light path of emergent laser after being pumped by a laser crystal and is used for generating a compensation surface shape conjugated with aberration of the laser crystal; the imaging assembly is arranged on a reflection light path of the deformable mirror, and light intensity distribution of the emergent laser is obtained by measuring the emergent laser reflected by the deformable mirror; and the closed-loop control module calculates the variable quantity of the deformable mirror according to the light intensity distribution, adjusts the deformable mirror according to the variable quantity, and compensates the thermally induced surface shape error of the laser crystal. According to the invention, the deformable mirror is used as a phase compensation element, and the comprehensive aberration generated by a transmission element is converted into the surface shape error of a single reflecting surface for characterization based on the self-adaptive optical principle. The surface shape of the deformable mirror is changed in a piezoelectric mode, it is ensured that the surface type of the deformable mirror can accurately correct wavefront distortion, introduced by the surface type, of the disc laser crystal, and the problem of error accumulation in multi-interface interference measurement is solved.

The invention belongs to the technical field of photoelectronics, and particularly relates to a wide-spectrum narrow-linewidth semiconductor mode-locked laser, and the collaboration of a saturable absorption region SA and a resonator is reflected in time domain-frequency domain dual optimization. And the resonator optimizes the frequency domain characteristics through nonlinear broadening, phase synchronization and mode purification. The SA adjusts a mode locking threshold value in real time through dynamic bias voltage, the pulse energy stability is ensured, dispersion management of the resonator balances the SPM and group velocity dispersion, spectrum splitting is avoided, and the dissipative soliton form is maintained. Besides, due to heterogeneous integration of the InP-based SA and the SiN-based resonator, wafer bonding of the InP-based SA and the SiN-based resonator is realized, high-efficiency energy transfer is realized through the low-loss conical waveguide, a high-performance frequency comb with a wide spectrum and a narrow pulse width is output, and the high-performance frequency comb can be widely applied to the fields of ultrafast optics, coherent light communication and precision spectroscopy.

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.