9results about How to "Improve electricity" patented technology

The utility model belongs to the field of tooth socket pressure data acquisition equipment, and particularly relates to a pressure data acquisition device for a wearable tooth socket, which comprises a pressure sensitive unit and a signal output unit packaged on a tooth socket body, the pressure sensitive unit comprises a first flexible substrate, a first flexible electrode, a dielectric film, a second flexible electrode and a second flexible substrate; the first flexible electrode and the second flexible electrode are correspondingly embedded in the first flexible substrate and the second flexible substrate respectively to form an integrated structure; a dielectric film is clamped between the first flexible substrate and the second flexible substrate; the upper surface and the lower surface of the dielectric film are respectively attached to the top surface of the first flexible electrode and the bottom surface of the second flexible electrode; and the pressure sensitive unit is in wireless communication with intelligent terminal equipment outside the oral cavity through the signal output device. The pressure sensitive unit is small in size, thin in thickness and high in fitting degree with the tooth socket, the shape of the original tooth socket cannot be changed, and foreign body sensation cannot be generated when the tooth socket is worn.

The invention discloses a preparation method of a transparent conductive oxide ITO (Indium Tin Oxide) film, which comprises the following steps of: A1, selecting a silicon wafer, and depositing ITO transparent conductive layers on microcrystalline silicon layers on two surfaces of the silicon wafer; a2, after the ITO transparent conductive layer in the step A1 is prepared, the silicon wafer is placed in a microwave environment to be subjected to microwave treatment under the conditions that the frequency ranges from 1 GHz to 3 GHz, the power ranges from 500 W to 1200 W, the treatment time ranges from 30 seconds to 100 seconds, and then the transparent conductive oxide ITO thin film is prepared. The invention further discloses application of the transparent conductive oxide ITO thin film, and the application comprises the step of applying the transparent conductive oxide ITO thin film to preparation of a heterojunction solar cell so as to improve the electrical performance and the optical performance of the heterojunction solar cell. The transparent conductive oxide ITO thin film has high light transmittance and low sheet resistance, is applied to the heterojunction solar cell, and improves the photoelectric conversion efficiency and stability of the cell.

The invention relates to the technical field of photoelectric devices, in particular to a negative capacitance tunneling phototransistor and a preparation method and application thereof. The negative capacitance tunneling phototransistor is of a structure combining a ferroelectric material and a low-dimensional semiconductor heterojunction material, the characteristics of the ferroelectric material are combined with the tunneling effect and the photoelectric characteristic of a low-dimensional semiconductor heterojunction, and a hafnium oxide-based ferroelectric gate dielectric is used for replacing a gate dielectric layer of a traditional phototransistor. A negative capacitance effect is provided in the grid structure of the negative capacitance tunneling phototransistor so as to improve the performance of the device; through the negative capacitance effect of the ferroelectric material, the electrical performance of the tunneling field effect transistor is enhanced, the switching ratio and the on-state current of the device are improved, the sub-threshold swing of the device is further reduced, and the photoelectric responsivity and the response speed of the device are improved at the same time. Due to the arrangement of the grid electrode and the low-dimensional semiconductor heterojunction, the purposes of ultralow subthreshold swing and no hysteresis are achieved. In addition, the device has the characteristics of good stability, simple structure, easy preparation and the like.

The invention discloses a preparation method of a graphene copper-based composite material, and belongs to the technical field of copper-based composite materials. The method comprises the following steps: (1) carrying out surface pretreatment on a copper foil; (2) dropwise adding the graphene dispersion liquid on the surface of the copper foil, and drying the copper foil after the graphene dispersion liquid is freely diffused until the graphene dispersion liquid covers the surface of the copper foil; (3) stacking the copper foils in a manner that a graphene layer is arranged between two layers of copper foils, and then sequentially carrying out cold pressing and hot pressing to obtain a hot-pressed composite material; (4) annealing the hot-pressed composite material to obtain an annealed composite material; (5) carrying out cold rolling on the annealed composite material to obtain a rolled composite material; and (6) the rolled composite material is subjected to annealing treatment, and the graphene copper-based composite material is obtained. On the basis of simplifying the preparation process and reducing the preparation demand conditions, the graphene is promoted to effectively and fully exert the strengthening effect, and the comprehensive performance of the composite material in multiple aspects is improved.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The present invention relates to the technical field of solar cells, and in particular to a high-performance passivation film for heterojunction solar cells and a preparation method thereof, comprising the following steps: depositing five layers of silicon-based films and hydrogen treatment layers on a textured silicon substrate in sequence, wherein the five layers of silicon-based films are an interface anti-epitaxial layer, a transition layer, a wide-bandgap transition layer, a wide-bandgap dense layer and a dense barrier layer in sequence. The multi-layer arrangement and thickness ratio in the passivation film of the invention can ensure the stability of the series resistance and fill factor of the battery terminal.

The application belongs to the technical field of semiconductor manufacturing, and discloses a preparation method of a high-fidelity photoresist pattern. The method comprises the steps of spin coating, pre-baking, exposure, post-exposure baking and development. The development step comprises: applying a developing solution to the surface of a substrate at a first rotation speed to preliminarily develop the photoresist; adjusting the substrate to a second rotation speed, which is lower than the first rotation speed, to partially remove the developing solution; applying the developing solution to the surface of the substrate while the substrate is in a stationary state, and performing main development while the substrate is kept in the stationary state; and again applying the developing solution to the surface of the substrate while the substrate is in a stationary state, and performing supplementary development while the substrate is kept in the stationary state. The application solves the problems of pattern distortion and shrinkage in the traditional process by using a segmented development process, improves the fidelity and process stability of the photoresist pattern, and has good industrial application value without the need to increase special materials or complex equipment.

The invention discloses a method for connecting a skutterudite thermoelectric material and an electrode by using a novel Al-containing high-entropy alloy diffusion barrier layer, and relates to the design and preparation of the diffusion barrier layer and the method for connecting the skutterudite thermoelectric material and the electrode. The method aims at solving the problems that diffusion cavities are huge due to unbalanced diffusion in a connector interface obtained through an existing skutterudite thermoelectric material welding method, and consequently a connecting connector is difficult to consider heat stability, interface resistance and mechanical performance at the same time. The method comprises the following steps: 1, cleaning a skutterudite thermoelectric material and an electrode; 2, preparing a diffusion barrier layer by using an electric arc melting or high-energy ball milling or rapid solidification method, and carrying out diffusion welding or brazing; and the diffusion barrier layer is made of an Al-Co-Cr-Fe-Ni system. The joint obtained by utilizing the novel Al-containing high-entropy alloy diffusion barrier layer can simultaneously have extremely low contact resistance, extremely high thermal stability and excellent mechanical properties. The method is suitable for connecting the skutterudite thermoelectric material and the electrode.

The invention relates to the field of preparation of high-performance carbon nanotube fibers, in particular to a method for preparing high-conductivity and high-toughness carbon nanotube fibers through vacuum sealing and two-phase region normal-pressure ferric trichloride nondestructive doping. Carbon nano tube fibers are used as raw materials, and a normal-pressure double-phase region heating method is adopted, so that controllable doping of ferric trichloride molecules among carbon nano tubes and in tube cavities is realized on the premise that intrinsic structures of the carbon nano tubes are not damaged; through surface charge transfer between ferric trichloride molecules and the carbon nanotubes and the action of the ferric trichloride molecules and the tube walls of the carbon nanotubes, the electrical and mechanical properties of the carbon nanotube fibers are greatly improved. According to the method, stable and controllable doping of ferric trichloride is realized while the structural integrity of the carbon nanotubes is maintained, the electrical and mechanical properties of the carbon nanotube fibers are improved, and the method is expected to be applied to the fields of wearable electronic equipment, aerospace and the like.