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208results about How to "Improve electricity" patented technology

Support separators for high performance communications cable with optional hollow tubes for; blown optical fiber, coaxial, and/or twisted pair conductors

The present invention includes a high performance communications cable exhibiting reduced cross-talk between transmission media that includes one or more core support-separators having various shaped profiles which define a clearance to maintain a spacing between transmission media or transmission media pairs. The core may be formed of a conductive or insulative material to further reduce cross-talk. The central core region may include a hollow opening or duct for blown fiber (ABF). A method of producing this cable introduces a core support-separator as described above into a cable assembly. The specially shaped core support-separator can be either interior to the cable jacket or be employed singularly without the benefit of a jacket and extends along the longitudinal length of the communications cable. Alternatively, with no jacket for cable completion, a portion of the separator wherein a thin layer of material can act as a type of skin for future mechanical protection may exist. The specially shaped core support-separator has a central region that is either solid, partially solid, foamed, with a solid skin over the foam or hollow itself. The cable may include a plurality of shaped sections that extend outward from the central region along the length of the central region. Each of the adjacent specially shaped sections defines a distinct clearance channel that extends along the longitudinal length of the core support-separator. Each of the defined clearance channels allow for disposal therein of conductors and/or optical fibers.
Owner:CABLE COMPONENTS GROUP

Method for effectively preparing high-orientation and high-compactness two-dimensional material thin film

The invention relates to the field of preparation and application of two-dimensional materials, in particular to a method for effectively preparing a high-orientation and high-compactness two-dimensional material thin film. The method comprises the following steps: taking a circular tube with a smooth inner surface as a casting die; pouring a solution which contains a two-dimensional material intothe die when the die rotates in the peripheral direction at high speed; uniformly coating the inner surface of the die with the solution by using centrifugal force; forming shear force which drives the two-dimensional material to be regularly arranged layer by layer in an oriented manner in the peripheral direction in the solution in a centrifugal rotating process; and meanwhile, driving the two-dimensional material to be accumulated at high compactness by the centrifugal force so as to obtain the two-dimensional material thin film with high orientation and high compactness. The method is suitable for preparing various two-dimensional materials such as graphene, and composite thin films and laminated heterostructure thin films of the two-dimensional materials; electric property, heat property, mechanical property and the like of the thin film are greatly improved; and the method is used in the field of high-performance electric conduction / heat-conduction thin films, heat management materials, high-strength thin films, electronic / optoelectronic devices, compact energy storage, gas / ion separating films, proton transmitting films and the like.
Owner:深圳烯材科技有限公司

Reversed-polarity AlGaInP-based light-emitting diode and manufacturing method thereof

ActiveCN104167477AThe electrode structure is completeStable pressure dropSemiconductor devicesOhmic contactVoltage stability
The invention discloses a reversed-polarity AlGaInP-based light-emitting diode and a manufacturing method thereof and belongs to the technical field of photoelectron. The method includes the following steps: firstly manufacturing a light-emitting-diode epitaxial wafer and manufacturing a holophote structure layer on the epitaxial wafer; bonding the epitaxial wafer provided with the holophote structure layer and a permanent substrate through a metal bonding layer; coarsening the surface of a first coarsening layer through removal of a temporary substrate, a buffer layer, a barrier layer and an n-type gallium arsenide layer; manufacturing patterned extending electrodes on the first coarsening layer and the n-type gallium arsenide ohmic contact layer; using a mask to protect existing patterned extending electrodes and removing the first coarsening layer and the n-type gallium arsenide ohmic contact layer, which are outside a mask protective layer and coarsening a second coarsening layer; and forming a main electrode on the second coarsening layer. The method uses a coarsening epitaxial layer structure and mask protection to improve adhesiveness and integrity of the electrodes and the epitaxial layer so that work voltage stability of a light-emitting device is ensured and product quality and yield are improved significantly.
Owner:YANGZHOU CHANGELIGHT
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