236results about How to "Improve luminous efficiency" patented technology

The present application relates to a kind of nitrogen-containing boron-containing pyrene organic compounds and its use, wherein organic compound is selected from the structure as shown in general formula (I), according to the organic compound described in the present application, by the aromatic ring on pyrene is replaced by nitrogen-containing boron, it is convenient to improve the stability of material molecule, improve the conductivity of material, to its preparation light emitting device, prolong the life of device. According to the organic compound of the present application, as blue or green fluorescent guest material, by cooperating with suitable host material, it can improve its luminous efficiency and life as electroluminescent device, provide a kind of low manufacturing cost, high efficiency, long life, low roll-down solution of light emitting device.

Provided is a light-emitting device with high reliability. The light-emitting device includes a first electrode formed on an insulating surface, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode, one of the first electrode and the second electrode is an anode, and the other is a cathode, the EL layer includes a light-emitting layer, a first layer, and a second layer, the first layer and the second layer are between the light-emitting layer and the cathode, the first layer is between the first electrode and the second layer, the second layer is between the first layer and the second electrode, the light-emitting layer contains a first light-emitting substance and a second light-emitting substance, the first light-emitting substance is a substance capable of converting triplet excitation energy into light emission, the second light-emitting substance is a fluorescent light-emitting substance, the light emission peak wavelength of the first light-emitting substance is shorter than the light emission peak wavelength of the second light-emitting substance, and the GSP_Slope of the second layer is greater than the GSP_Slope of the first layer.

The invention provides an organic compound, a preparation method thereof and an organic electroluminescent device, and belongs to the technical field of luminescent materials, and the organic compound has a structure as shown in a general formula I. The organic compound is used as a luminescent auxiliary material, can effectively improve the luminescent efficiency and stability of the organic electroluminescent device, and has good application prospects. The service life is prolonged, the driving voltage is reduced, and the device is endowed with more excellent comprehensive performance.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The present application provides a heterocyclic compound represented by formula 1, an organic light emitting element including the same, and a composition for forming an organic layer.

A method for manufacturing an electroluminescent element includes: forming a first electrode on a substrate; forming a first insulating layer covering the first electrode; forming a second electrode disposed on the first insulating layer and having a region overlapping with the first electrode; forming a first electron transport layer in contact with the second electrode; forming a second insulating layer covering the region overlapping with the second electrode and having an opening in the region overlapping with the first electrode. The method involves coating the opening with a liquid composition containing a metal oxide material and a solvent; removing the solvent after coating to form the second electron transport layer; forming a light-emitting layer overlapping the second electron transport layer and containing an electroluminescent material; and forming a third electrode in the region overlapping with the light-emitting layer.

The application provides a triarylamine derivative and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescence. In order to solve the problem of low device performance caused by the covering layer material in the prior art, the application provides a triarylamine derivative and an organic electroluminescent device thereof, which is applied to an organic electroluminescent device as a covering layer material to effectively improve the luminous efficiency and service life of the device. Since the triarylamine derivative has strong rigidity, a suitable glass transition temperature (Tg), good thermal stability and a high refractive index in the molecule, the coupling efficiency of light in the device is increased, the light extraction efficiency is improved, the generation of Joule heat is reduced, and the service performance of the device is improved.

The utility model discloses a display substrate and a display device. The display substrate comprises a substrate; the driving layer is positioned on one side of the substrate and is provided with a plurality of conductive bonding pads; the light absorption layer is located on the side, away from the substrate, of the driving layer, the orthographic projection of the light absorption layer on the substrate and the orthographic projection of the driving layer on the substrate are overlapped, the light absorption layer is provided with a plurality of first via holes corresponding to the plurality of conductive bonding pads, and the orthographic projection of the first via holes on the substrate and the orthographic projection of the corresponding conductive bonding pads on the substrate are overlapped; the light-emitting units are located on the side, away from the substrate, of the light absorption layer and electrically connected with at least part of the conductive bonding pads through the first via holes; the display substrate further comprises a light transmitting layer and a base material layer which are located on the side, away from the substrate, of the light absorbing layer and sequentially arranged in a stacked mode, the light transmitting layer and the base material layer are continuously distributed film layers, and the light transmitting layer is located between the adjacent light emitting units and located on the side, away from the substrate, of the light emitting units. The display substrate has low reflectivity and high transmittance at the same time, and the application scene is wider.

This invention provides a display panel, a method for manufacturing the same, and a display device. The display panel includes a light-emitting device layer and an array substrate. The array substrate includes a substrate layer, an insulating module, a first conductive layer, and a second conductive layer. The insulating module is disposed on the substrate layer. The first conductive layer and the second conductive layer are staggered within the insulating module. The first conductive layer includes a padding layer, the padding layer of which does not coincide with the orthographic projection of the second conductive layer on the substrate layer; or the substrate layer has a first groove on a surface facing the conductive structure, the first groove of which coincides with the orthographic projection of the second conductive layer on the substrate layer.

The display device according to this disclosure includes: a substrate including a display area and a non-display area; a plurality of light-emitting diodes (LEDs) disposed on the substrate; an encapsulation layer disposed over the plurality of LEDs; a touch sensing unit disposed on the encapsulation layer and including a plurality of touch electrodes; a plurality of organic dye patterns disposed on the touch sensing unit overlapping the light-emitting areas of the plurality of LEDs, and having a lower surface larger than the upper surface; and a black matrix exposing the upper surface of the plurality of organic dye patterns. Therefore, light is refracted from the side surfaces of the plurality of organic dye patterns to the upper surface of the plurality of organic dye patterns, thereby improving luminous efficiency.

This application discloses a crystal, a rare-earth-doped crystal, its preparation method, and its applications, belonging to the field of crystal materials. The chemical formula of the crystal is [Gd(L)]. 1.5 (DMA)] n Formula I; in Formula I, L is a ligand formed by deprotonated benzene polycarboxylic acid; benzene polycarboxylic acid is selected from any one of terephthalic acid, phthalic acid, and isophthalic acid; DMA is N , N -Dimethylacetamide; n ∞ represents continuous repetition and infinite extension. The crystal is rare-earth doped, and the chemical formula of the rare-earth doped crystal is [Gd]. 1‑x% (L) 1.5 (DMA)] n :x% Ln 3+ Equation II; in Equation II, x = 0.1~10; Ln 3+ Selected from Tb 3+ Or Eu 3+ Any one of the following. It has potential application value in fields such as fluorescent materials, multicolor display materials, long afterglow materials, X-ray detection and imaging materials, radiation detection dosimeters, and optical information encryption. The preparation method used in this application can be easily achieved through solution reaction under relatively mild conditions, with low cost and strong industrial feasibility.

The utility model discloses an LED luminous tube which comprises an inner injection molding body, an outer injection molding body, a metal support, an LED luminous chip and packaging glue. The outer injection molding body wraps the outer side of the inner injection molding body, and a light-emitting cavity is formed between the outer injection molding body and the inner injection molding body; the metal support is embedded in the inner injection molding body and extends to the outer side of the outer injection molding body to form a first welding leg and a second welding leg, and the extending direction of the first welding leg is perpendicular to the extending direction of the second welding leg. The LED light-emitting chip is installed on the metal support and located in the light-emitting cavity. And the packaging glue is filled in the light-emitting cavity. The light-emitting cavity is formed by the inner injection molding body and the outer injection molding body, a stable installation environment is provided for the LED light-emitting chip, meanwhile, the light-emitting cavity is filled with the packaging glue, the propagation path of light is optimized, and the light-emitting efficiency is improved. According to the design, the layout of electrical connection is optimized, meanwhile, the welding reliability is remarkably improved, and the problems of pseudo soldering, unsoldering and the like are prevented.

The application relates to the technical field of organic light-emitting display, and discloses a cyano-substituted aryl ring-connected triazine compound and application thereof. The cyano-substituted aryl ring-connected triazine compound has a structure as shown in formula (I), the compound provided by the application has high bond energy between atoms, good thermal stability, is conducive to solid-state stacking between molecules, is conducive to injection and migration of excitons, can effectively reduce the driving voltage of an organic electroluminescent device when used as an electron transport material, improves the light-emitting efficiency of the organic electroluminescent device, and prolongs the service life of the organic electroluminescent device. Meanwhile, the cyano substitution can adjust the energy level of the compound, the HOMO and LUMO energy levels are deepened, the compound is more matched with adjacent layers, and the device voltage is reduced. The application further provides an organic electroluminescent device and a display device containing the compound of formula (I).

The application belongs to the technical field of organic electroluminescence, and relates to an organic compound, an organic electroluminescent device using the same and an electronic device. The organic compound has a structure as shown in formula 1. When the organic compound is used in an organic electroluminescent device, the performance of the organic electroluminescent device can be significantly improved.

The present specification relates to compounds of Chemical Formula 1, coating compositions comprising the compounds, organic light emitting devices using the coating compositions, and methods of manufacturing the same.

The application relates to long-afterglow light-emitting concrete and a preparation method thereof, and belongs to the technical field of building engineering materials. The long-afterglow light-emitting concrete is prepared from the following components: cementitious material 420-485 parts by weight, water reducing agent 8-10 parts by weight, long-afterglow light-emitting material 5-10 parts by weight, admixture 5-7.5 parts by weight, and water 50-80 parts by weight. The long-afterglow light-emitting material is combined with high-performance concrete, the light penetration and excellent light-emitting performance of the long-afterglow light-emitting material are utilized, and high-performance long-afterglow light-emitting concrete with high strength and long afterglow time is obtained, which can be used in the fields of emergency passage indication, weak light illumination, building decoration and art crafts.

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

This invention discloses a III-V semiconductor epitaxial structure, its fabrication method, and its applications. The epitaxial structure includes a first buffer layer and a first interconnecting layer stacked together. The first interconnecting layer has a first protrusion structure with intermittent structures between it. It also includes a second buffer layer and a second interconnecting layer within the intermittent structures, the second interconnecting layer being composed of at least multiple independent second protrusion structures. The first and second protrusion structures can serve as the basis for epitaxial growth. The III-V semiconductor light-emitting layer grown based on the III-V semiconductor epitaxial structure provided by this invention forms light-emitting surfaces of various sizes and curvatures, greatly increasing the light-emitting area. It also enables the light-emitting layer to form quantum dot luminescence, and utilizes the quantum dot confinement effect to reduce the quantum Stark effect, improving the incorporation of light-emitting layer components. These combined effects significantly improve radiative recombination efficiency, ultimately enhancing the overall luminous intensity and efficiency of the device.

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The invention discloses an HRP chemiluminescent substrate system, a kit and a preparation method, the HRP chemiluminescent substrate system is composed of a liquid A and a liquid B which are physically isolated and stored; the solution A is an alkaline buffer system with the pH value of 9.0-9.6, and comprises isoluminol or a salt substrate thereof, a cationic surface active agent CTAC and a metal chelating agent diethylene triamine pentaacetic acid; and the solution B is an acidic solution with the pH value of 4.5-5.5, and comprises an oxidizing agent and a reinforcing agent N-(3-chloro-4-hydroxyphenyl) acetanilide. According to the invention, the reinforcing agent N-(3-chloro-4-hydroxyphenyl) acetanilide is placed in the acidic liquid B, when the acidic liquid B is mixed with the alkaline liquid A, the mixed system is maintained at a specific pH value of 8.3-8.6, and the reinforcing agent is rapidly dissociated into phenoxy anions; and carrying out in-situ capture and enrichment on a micelle interface by CTAC cationic micelles with positive charges, which exist in the solution A in advance, through electrostatic attraction. And in cooperation with a low-ion-strength environment brought by no buffer salt in the liquid B, the system ensures the high activity of the HRP enzyme, realizes directional interface catalysis of the enhancer, and significantly improves the luminous efficiency and stability.

This invention relates to a heterocyclic compound represented by chemical formula 1 and an organic light-emitting element comprising the same.

The present disclosure provides a light emitting diode with improved light emitting efficiency and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting diode comprises a first epitaxial layer, a second epitaxial layer, a connecting structure and a conductive structure; the first epitaxial layer, the connecting structure and the second epitaxial layer are sequentially stacked, the surface of the second epitaxial layer has a first groove extending to the connecting structure, the conductive structure is located at least in the surface of the connecting structure, the surface of the second epitaxial layer and the first groove, the conductive structure is electrically connected with the first epitaxial layer through the connecting structure, and the conductive structure is electrically connected with the second epitaxial layer. The present disclosure can increase the light emitting area of the light emitting diode, reduce the area loss of the high-voltage light emitting diode, realize the high-voltage light emitting diode with smaller size, and improve the light emitting efficiency.

The present application relates to a kind of cutter, backlight module, light guide plate and its preparation method, the cutter includes blade, and the installation surface for being oppositely arranged with blade and being used to be installed with impact equipment interface, and the first connecting surface and the second connecting surface of connecting blade and installation surface, first connecting surface and second connecting surface are oppositely arranged;First connecting surface is connected with second connecting surface by third connecting surface and fourth connecting surface respectively;Third connecting surface and fourth connecting surface are oppositely arranged;First connecting surface is the inclined plane inclined to the direction where second connecting surface is located;Second connecting surface is the inclined plane inclined to the direction where first connecting surface is located.The cutter is used to prepare inclined slope microstructure, can be prepared to obtain the light guide plate with high luminous efficiency and high overall brightness, the overall optical performance of the light guide plate can be improved by 5%-20%.

This invention relates to the field of semiconductor optoelectronic devices, specifically disclosing a Micro-LED epitaxial structure, which sequentially comprises a substrate, a buffer layer, an N-type GaN layer, a stress relief layer, a first superlattice layer, an electron modulation layer, a light-emitting layer, a hole modulation layer, a second superlattice layer, and a P-type GaN layer; the stress relief layer includes In... α Ga 1‑α The N-layer and the first GaN layer; the first superlattice layer includes In. x Ga 1‑x N-layer and second GaN layer; electronic modulation layer includes Al a Ga 1‑a The light-emitting layer includes an N-layer and a third GaN layer, and the light-emitting layer includes an In layer. y Ga 1‑y N quantum well layer and quantum barrier layer, hole modulation layer including Al b Ga 1‑b N layers and In c Ga 1‑c N-layer, the second superlattice layer includes In z Ga 1‑z The N-layer and the fourth GaN layer have the following parameters: y > x > α, y > z, a ≥ b, and the number of periods in the light-emitting layer is ≤ 8. Implementing this invention can improve the luminous efficacy and luminous uniformity of Micro-LEDs at low current densities.

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.

A keyboard includes a bottom plate, a plurality of keys, and a backlight module. The bottom plate has a short axis direction and a long axis direction. The keys are disposed on the bottom plate. The backlight module is disposed on one side of the bottom plate. The backlight module includes a light shielding sheet, a light guide plate, and a reflective sheet. The light shielding sheet includes an upper surface and a lower surface, and the upper surface faces the bottom plate. The light guide plate is disposed on the lower surface of the light shielding sheet. The light guide plate includes a plurality of light guide structures, and the light guide structures correspond to the keys, respectively. Each of the light guide structures includes a ring-shaped portion and at least one continuous fold line portion. The continuous fold line portion is connected to the ring-shaped portion, and the ring-shaped portion is formed by a plurality of bending portions. The reflective sheet is disposed below the light guide plate.

This invention provides a fused heterocyclic compound and its organic electroluminescent device, specifically relating to the field of organic electroluminescent materials technology. The fused heterocyclic compound provided by this invention possesses excellent electron transport capabilities, suitable HOMO and LUMO energy levels, and a high triplet energy level, which can reduce the electron transport barrier and improve the balance of electron and hole transport. Simultaneously, it can effectively confine holes within the luminescent layer, increasing the probability of effective exciton recombination, thereby reducing the driving voltage, improving luminous efficiency, and extending device lifetime. Furthermore, this fused heterocyclic compound exhibits strong rigidity and a high glass transition temperature, making it less prone to crystallization and aggregation during vapor deposition, thus possessing good film-forming properties and thermal stability. This improves the stability of organic electroluminescent devices and extends the lifespan of electronic components.

This invention belongs to the field of heat dissipation structure technology, specifically an LED lamp heat dissipation structure. It includes heat dissipation fins, a bottom bracket fixedly connected to the bottom of the heat dissipation fins, and a top bracket detachably mounted on the top of the heat dissipation fins. A cooling fan facing the heat dissipation fins is fixedly connected to the top of the top bracket. The heat dissipation fins include a central ring and fins, with multiple fins arranged in a ring array on the outer circumference of the central ring. An outer peripheral baffle, capable of restoring its original shape, is fixedly connected to the outer end of each fin. The free end of the outer peripheral baffle can abut against the outer end of an adjacent fin, sealing the gap between adjacent fins. In this invention, when the cooling fan is activated, the entire heat dissipation fin forms a four-sided sealed ventilation structure. This effectively improves airflow convection at the LED lamp, reduces airflow convection at gaps, and allows more airflow to directly act on the LED lamp and its surrounding heat dissipation fins, thereby significantly improving heat dissipation efficiency.