13563results about How to "Improve luminous efficiency" patented technology

Provided are an organic electroluminescence device and an aromatic amine derivative for realizing the device. The aromatic amine derivative improves the luminous efficiency of an organic electroluminescence device using the derivative, and its molecules hardly crystallize. The organic electroluminescence device has an organic thin film layer composed of one or a plurality of layers including at least a light emitting layer, the organic thin film layer being interposed between a cathode and an anode, and at least one layer of the organic thin film layer, especially a hole transporting layer contains the aromatic amine derivative alone or as a component of a mixture, so the organic electroluminescence device can be produced in improved yield, and has a long lifetime.

Provided is a homogeneous organic EL device having a low driving voltage, high luminous efficiency, and a long lifetime. The device is an organic electroluminescent device including a light-emitting layer between an anode and a cathode opposite to each other, in which: the light-emitting layer contains a host material and a light-emitting dopant material; the host material is a material obtained by preliminarily mixing two or more kinds of compounds selected from compounds each having a structure in which two nitrogen atoms of an indolocarbazole ring are each substituted with an aromatic hydrocarbon group or an aromatic heterocyclic group; and the light-emitting layer is formed by co-depositing the preliminarily mixed host material and the light-emitting dopant material in a vacuum.

A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide layer held between the p-type cladding layer and the n-type cladding layer, and an active layer containing In held between the p-type guide layer and the n-type guide layer. The In compositions in the p-type guide layer and the n-type guide layer are increased as approaching the active layer respectively. Each of the p-type guide layer and the n-type guide layer may have a plurality of In_xGa_1-xN layers (0≦x≦1). In this case, the plurality of In_xGa_1-xN layers may be stacked in such order that the In compositions therein are increased as approaching the active layer.

A package structure including a first lead, a second lead, an encapsulant, a light-emitting device and an electrostatic discharge (ESD) protection device is provided. The second lead is disposed beside the first lead, and parts of the first lead and the second lead are encapsulated by the encapsulant. The encapsulant has a first cavity and a second cavity. Parts of the first lead and the second lead are exposed by the first cavity and the other parts of the first lead and the second lead are exposed by the second cavity. The light-emitting device is disposed inside the first cavity and electrically connected to the first lead and the second lead. The ESD protection device is disposed inside the second cavity and electrically connected to the first lead and the second lead.

An OLED device comprises a cathode, an anode, and has therebetween a light-emitting layer containing a phosphorescent emitter and a host comprising a first aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl)pyridine ligand and at least one phenoxy ligand, wherein the phenoxy ligand is substituted by an amine or there is further present adjacent to the light-emitting layer on the cathode side a layer containing a second aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl)pyridine ligand and at least one phenoxy ligand.

The present invention provides an organic electroluminescence device including an organic layer comprising an emissive layer; a pair of electrodes comprising an anode and a cathode, and sandwiching the organic layer, wherein at least one of the electrodes is transparent; a transparent layer provided adjacent to a light extracting surface of the transparent electrode; and a region substantially disturbing reflection and retraction angle of light provided adjacent to a light extracting surface of the transparent layer or in an interior of the transparent layer, wherein the transparent layer has a refractive index substantially equal to or more than the refractive index of the emissive layer.

Provided is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, fully secured of driving stability, and simply constructed. The EL device has a light-emitting layer disposed between an anode and a cathode stacked one upon another on a substrate and the light-emitting layer comprises a phosphorescent dopant and an indolocarbazole derivative as a host material. Examples of the indolocarbazole compounds include a compound represented by the following formula (2) or (3), wherein X is N or CH, at least one of Xs is N, and Ar₁ to Ar₃ each is a substituted or unsubstituted aromatic group.

Disclosed is a high power LED package, including an LED; a silicon submount to which the LED is flip chip bonded; a reflective film formed on the silicon submount and electrically connected to the LED to increase light emitting efficiency of the LED; electrical wires connected to the reflective film to connect the LED to an external circuit; an insulating body formed below the silicon submount; a heat sink formed below the insulating body; an insulating substrate formed on the heat sink; and metal lines formed on the insulating substrate and connected to the electrical wires. In the LED package, since the silicon submount having the LED flip chip bonded thereto is directly attached to the heat sink, heat generated upon operation of the LED can be effectively radiated. Also, the LED package has a simple structure, thus having drastically decreased manufacturing costs. The high power LED can be applied to backlight units of LCDs or general illumination fixtures, and as well, to backlight units of conventional PCS phones or LED packages for key pads, therefore increasing the light properties of the LED. In particular, the LED package has an array of two or more submounts each having an LED flip chip bonded thereto, and thus, it can be applied to a module of a backlight unit for LCDs, thus having remarkably reduced manufacturing costs.

The invention provides an organic electroluminescent element comprising an organic layer containing at least one luminescent layer and at least one charge transporting layer being interposed between a pair of electrodes, wherein the organic electroluminescent element comprises: (1) two or more kinds of host materials and at least one luminescent material contained in the luminescent layer; (2) at least one layer adjacent to the luminescent layer, the layer containing a host material and substantially no luminescent material; and (3) at least one charge transporting layer being doped with at least one of an electron-accepting compound and an electron-donating compound.

A light-emitting element containing a light-emitting material with high light emission efficiency is provided. The light-emitting element includes a high molecular material and a guest material. The high molecular material includes at least a first high molecular chain and a second high molecular chain. The guest material has a function of exhibiting fluorescence or converting triplet excitation energy into light emission. The first high molecular chain and the second high molecular chain each include a first skeleton, a second skeleton, and a third skeleton, and the first skeleton and the second skeleton are bonded to each other through the third skeleton. The first high molecular chain and the second high molecular chain have a function of forming an excited complex.

The invention discloses a high-efficiency light emitting diode (LED) lamp bulb. The high-efficiency LED lamp bulb comprises a light transmitting bulb shell, a core column, at least one LED light emitting strip, a driver and an electric connector, wherein the core column is provided with an exhaust tube, an electric lead-out wire and a bracket; the LED light emitting strip is fixed on the core column, and an electrode of the LED light emitting strip is connected with the driver and the electric connector through the electric lead-out wire of the core column so as to connect an external power supply; the light transmitting bulb shell and the core column are hermetically sealed; the bulb shell is filled with gas with high heat conductivity; the LED light emitting strip comprises a transparent substrate strip which is provided with at least one strip of LED chips connected in series for emitting light of the same or different colors and is sealed in a glass tube; the electrode of the LED is led out of the two ends of the glass tube; the lead-out wire and the glass tube are hermetically sealed; the glass tube is filled with the material with high heat conductivity and high light transmittance; the LED chip emits light of 4pi; the inner or outer wall of the glass tube or the inner wall of the light transmitting bulb shell is provided with a light emitting material; and at least one LED light emitting strip is connected to form a one-way direct current DC or two-way alternating current AC to work. The LED lamp bulb of the invention has the advantages that: the LED chip emits light of 4pi, a heavy radiator is not needed, the driver does not need a transformer and the entire lamp has high efficiency, low cost, and is safe and reliable and the like, and is used for lighting.

A main chain-type or side chain-type polymeric compound having a structure wherein at least one metal complex segment having a plurality ligands is introduced into a main chain or a side chain is provided. In the case where the polymeric compound is the main chain-type polymeric compound, the metal complex segment has at least one ligand constituting a polymer main chain of the polymeric compound and having a carbon atom and oxygen atom bonded to a metal atom. On the other hand, in the case where the polymeric compound is the side chain-type polymeric compound, a polymer main chain thereof has a conjugated structure, preferably a conjugated double bond. A ligand for the polymeric compound includes a chain or cyclic ligand, of which a bidentate ligand having an organic cyclic structure is preferred, and the ligand has at least one carbon atom or oxygen atom and is bonded to a center metal atom, preferably iridium, via the carbon atom or oxygen atom. In a case of forming a luminescence layer by using the polymeric compound as a luminescent material, a resultant organic luminescence device is less liable to cause a concentration extinction and is a high-luminescence efficiency device excellent in stability.

The present invention relates to a dipolar LED and a dipolar LED module incorporating the same, in which an upper hemisphere-shaped base houses an LED chip therein and adapted to radiate light from the LED chip to the outside, and a pair of reflecting surfaces placed at opposed top portions of the base in a configuration symmetric about an imaginary vertical plane. The vertical plane passes through the center of the LED chip perpendicularly to a light-emitting surface of the LED chip. The reflecting surfaces are extended upward away from the top portions of the base to reflect light from the LED chip away from the imaginary vertical plane. A pair of radiating surfaces are placed outside the reflecting surfaces, respectively, to radiate light from the reflecting surfaces to the outside. In this way, light emission from the LED chip can be concentrated in both lateral directions.

Disclosed herein is a package structure including at least one high power light-emitting diode to exhibit excellent heat release properties. In the package structure, a light-emitting diode chip which generates heat is directly attached to a beacon processed to protrude from part of a heat spreader having high heat conductivity, whereby an electrical wiring portion is separated from a heat release portion, thus maximizing heat release properties and realizing high luminance and reliability. The package structure is composed of a beacon formed on a metal or non-metal substrate having high heat conductivity to mount a high power light-emitting diode chip, to increase heat release properties; a wiring portion provided on the same line as the diode to input and output power and signals; and a reflection cup having a cavity, which may be inserted into or attached to the heat spreader or the wiring substrate, including a low temperature co-fired ceramic substrate, a high temperature co-fired ceramic substrate, or a printed circuit board.

The invention relates to a nonpolar A side nitride film that comprises a silicon (102) underlay, metal layer which grows upon the silicon underlay sequentially, InGaAlN initial growth layer and the first InGaAlN buffer layer, it characterized in that: said silicon underlay is Si underlay which adopts the (102) side or offset angle. The nonpolar a side nitride film which grows on the silicon underlay can be used in LBD, laser, solar battery. The component extension configuration is adopted according to different component, for example the LBD and laser, and using the mature silicon craft further to produce relative diprosopia electrode component or peeling off component. The advantages of the invention are: the invention can increase the growth quality of nonpolar GaN base material, and decrease the cost; the craft of current component can be simplified greatly, the cost can be decreased, and increase the elimination efficiency and lightening efficiency greatly.

Improved apparatus and methods for spatial light modulation are disclosed which utilize optical cavities having both front and rear reflective surfaces. Light-transmissive regions are formed in the front reflective surface for spatially modulating light.

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

Disclosed herein is an LED package for a backlight unit. The LED package includes a plurality of LEDs, a die bonding part, a wire bonding part and a body. The die bonding part, on which the plurality of LEDs is arranged, allows the first electrodes of the LEDs to be electrically connected to an external circuit. The wire bonding part is spaced apart from the die bonding part by a predetermined distance to be insulated from the die bonding part and allows the second electrodes of the LEDs to be electrically connected to the external circuit so that the LEDs are operated. The body has a molding cup which is used to fill a space above the LEDs with transparent resin and a base on which the die bonding part and the wire bonding part are arranged.

The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO₄ or the like can be used for the substrate 16.

Disclosed herein a quantum dot light-emitting device which has an inorganic electron transport layer. According to the device, an electron transport layer formed by an inorganic materials, thereby providing a high electron transport velocity or electron density and improving a light emitting efficiency. Further, interlayer resistance between electrode and organic-electron transporting layer or between quantum dot light-emitting layer and organic-electron transporting layer is prohibit, thus increasing a light emitting efficiency of diode.

Disclosed is a light emitting diode (LED) for enhancing the current spreading performance. The LED includes a plurality of contact holes exposing an N-type semiconductor layer through a P-type semiconductor layer and an active layer, and a connection pattern electrically connecting exposed portions of the N-type semiconductor layer through the contact holes, thereby enhancing current spreading in the N-type semiconductor layer. In addition, disclosed is an LED including a plurality of light emitting cells spaced apart from one another on an N-type semiconductor layer and an N-contact layer between the light emitting cells. A plurality of light emitting cells are employed in the LED, so that current can be spread in the LED.

A light emission apparatus that can restrict deterioration of resin used for the light emission apparatus, and that has a reasonable structure fit for actual use is provided, in which a light reflective layer is provided to cover the side surfaces of the chips 26 provided in the concave 2a. According to this, excitation light reflected by the phosphor layer 32, such as ultraviolet light, is reflected again by the light reflective layer 27. Therefore, the excitation light will not reach the resin layer 21, thereby restraining the deterioration of the resin. Moreover, the light reflective layer 27 covers the side surfaces of the chips 26, thereby efficiently conducting the heat emitted from the chips 26 to the metal substrate 20 via the resin layer 21. This improves the heat-dissipation efficiency of the chips 26.