884results about How to "Improve luminous efficiency" patented technology

The invention belongs to the field of organic photoelectric materials, and discloses an electroluminescent material and a preparation method and application thereof. The structure of the electroluminescent material is as shown in a formula I: # imgabs0 #. According to the electroluminescent material compound provided by the invention, on the basis of a 9-methyl-9-phenylfluorene group, triarylamine and an aromatic ring are connected through 2 and 4 sites, when the triarylamine group is substituted by aryl, the energy level is relatively low, carrier migration localization is avoided, and a hole transport energy barrier can be reduced, so that the migration rate and the luminous efficiency are improved; triarylamine has excellent hole transport performance, a triarylamine material is used as a light-emitting auxiliary layer, a group with a high triplet state energy level is introduced, the energy range between energy levels can be reduced, and the service life of the device is greatly prolonged.

The present invention provides a composition, particularly a composition for an organic electroluminescent device, the composition comprising a first compound having a structure represented by formula (I-1) or (I-2) and a second compound having a structure represented by formula (II). The composition is easy to prepare and good in thermal stability, meanwhile, the compound can adjust the stability of the material, and finally it is ensured that the photoelectric property of a device prepared from the compound is obviously improved. # imgabs0 #

The invention discloses a display panel and a display device. The display panel comprises a substrate, a pixel definition layer, sub-pixels, separators and a first shading layer. The pixel definition layer is arranged on one side of the substrate, and pixel openings are formed in the pixel definition layer; the sub-pixel is arranged in the pixel opening and comprises a first electrode, a luminescent material layer and a second electrode which are sequentially stacked in a first direction deviating from the substrate; the separators are arranged in the pixel openings and at least divide the light-emitting material layers in the sub-pixels into a plurality of parts; the first shading layer is arranged on the side, away from the substrate, of the sub-pixels, and first light-transmitting openings are formed in the portions, corresponding to the sub-pixels, of the shading layer. Through the scheme, the display panel has better peep-proof performance, higher luminous efficiency is ensured, and the influence on the service life and the power consumption is reduced.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a spirocyclic group with large steric hindrance. And the energy transmission performance between a subject and an object or a sensitizer can be improved by the large conjugated spiro structure unit. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the lighting voltage is reduced, and meanwhile, the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention provides an electroluminescent material composition and an organic electroluminescent device.The electroluminescent material composition comprises a combination of a first organic electroluminescent material and a second organic electroluminescent material, and through structural design and synergistic compounding of the two kinds of organic electroluminescent materials, the organic electroluminescent material composition is prepared. The electroluminescent material composition has excellent photoelectric properties and carrier transport properties, realizes balanced transport of carriers, is used for organic electroluminescent devices, is especially suitable for being used as a main body material of a luminescent layer, regulates injection / transport balance of holes and electrons, prevents a large amount of carriers from being accumulated at an interface, and improves the luminous efficiency of the organic electroluminescent devices. The device has excellent luminous efficiency and stability, the service life of the device is remarkably prolonged, the starting voltage is lower, the comprehensive performance of the device is effectively improved, and the requirements for high-performance materials in current panel and display manufacturing are fully met.

The invention discloses aggregation-induced emission microspheres with colorimetric-fluorescence double signals as well as a preparation method and application of the aggregation-induced emission microspheres. The aggregation-induced emission microsphere comprises a carboxyl polystyrene microsphere and an aggregation-induced emission dye embedded in the carboxyl polystyrene microsphere, the aggregation-induced emission microsphere has colorimetric-fluorescence double signals, is red under natural light, has strong absorption at 600nm, shows high luminous efficiency at 725nm, not only effectively avoids the interference of biological autofluorescence and reduces background interference, but also has good light stability and photobleaching resistance, and can be used for preparing the aggregation-induced emission microsphere. And due to the high molar extinction coefficient, the colorimetric and fluorescent double-signal output capability is realized at the same time. In addition, the aggregation-induced emission microspheres are high in reproducibility in the preparation process, have the potential of large-scale synthesis and meet the requirements of industrial batch production.

The invention belongs to the field of organic electroluminescence, and discloses an electron transport layer material and a preparation method and application thereof. The structure of the material of the electron transport layer is as shown in a chemical formula I: # imgabs0 #. The compound of the material of the electron transport layer provided by the invention is composed of 9-alkyl-9-phenylfluorenyl, a triazine group and cyano-substituted aryl or heteroaryl, and the groups have high electron affinity to form an efficient electron transport channel; the organic light-emitting material also has good thermal stability, and as an electron transport layer material of an organic electroluminescent device, the organic light-emitting material has the characteristics of low driving voltage, high luminous efficiency and long service life.

The invention belongs to the field of organic electroluminescence, and provides an organic metal iridium complex, a preparation method and an organic electroluminescent device containing the organic metal iridium complex. The structural general formula of the organic metal iridium complex is shown in the specification. After the organic metal iridium complex provided by the invention is applied to the organic electroluminescent device, the starting voltage of the device is reduced, the luminous efficiency of the device is improved, and the service life of the device is prolonged.

The invention provides a light-emitting diode, a manufacturing method thereof and a light-emitting device. The light-emitting diode comprises a substrate, and a first semiconductor layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer which are sequentially positioned on the substrate, the first semiconductor layer comprises a first layer body and a lug boss; the convex part is arranged on the upper surface of the first layer body and comprises a plurality of bulges; the N-type semiconductor layer fills gaps among the plurality of protrusions. As the N-type semiconductor layer is low in contact resistance and good in conductivity, the projection part is arranged on the first semiconductor layer, the contact area between the first semiconductor layer and the N-type semiconductor layer is increased, the current expansion performance of the contact surface between the first semiconductor layer and the N-type semiconductor layer is improved, the burst caused by current gathering in the light-emitting diode is avoided, and the light-emitting efficiency is improved. The local brightness of the light-emitting diode is reduced; and the brightness is non-uniform.

The invention provides an antimony-based organic-inorganic hybrid metal halide luminescent material and a preparation method thereof, and is suitable for the photoelectric field. According to the invention, 2-methylpiperazine is used as an organic ligand, a luminescent material with a chemical formula of (C5H14N2) SbCl5 is synthesized, and C5H14N2 represents a cation form of 2-methylpiperazine. The excitation wavelength range of the material is 250-400 nanometers, the emission wavelength of the material covers 450-850 nanometers, and the main emission peak value of the material is about 600-650 nanometers. The preparation method disclosed by the invention has the characteristics of simple process, low cost and suitability for large-scale production. Besides, the luminescent material shows wide excitation and emission bandwidths, has high luminous efficiency, and can be widely applied to manufacturing of luminescent devices and application in the fields of fluorescent powder, spectrum conversion, display illumination and the like.

The invention provides a fluorene-containing amine compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials. The fluorene-containing amine compound disclosed by the invention has relatively high hole transport capacity and proper HOMO energy level, and when the fluorene-containing amine compound is applied to a hole transport layer or an electron blocking layer of an organic electroluminescent device, the luminous efficiency of the device is effectively improved, and the service life of the device is effectively prolonged; the fluorene-containing amine compound provided by the invention has a relatively high refractive index, and when the fluorene-containing amine compound is applied to a covering layer of the organic electroluminescent device, the luminous efficiency is effectively improved, so that the luminous efficiency of the organic electroluminescent device is further improved, and the service life of the organic electroluminescent device is further prolonged. In conclusion, the fluorene-containing amine compound provided by the invention can be widely applied to the fields of panel display, illumination light sources and the like, and has a good application prospect.

The invention relates to the technical field of OLED (Organic Light Emitting Diode) luminescent materials, in particular to an anthracene azepine material as well as a preparation method and application thereof, and the structure of the anthracene azepine material is as shown in the following formula: # imgabs0 #, r is any one of a deuterated terphenyl group, an isoquinolyl group, a piryl group, a 9, 9-diphenyl fluorenyl group, a dibenzothienyl group and a deuterated N-phenyl carbazolyl group. The parent structure of the anthracene-azepine material has anthracene, deuterated carbazole, azepine structures and the like, and intramolecular large steric hindrance space distorted structures, so that the spin-orbit coupling effect between different excited states is remarkably improved, the molecules are greatly limited during relaxation, and finally, the device realizes dark blue light emission, and has wide application prospects. The introduced aryl heterocyclic structure can greatly improve the stability of the material, and meanwhile, the deuterated structure can obviously prolong the service life of the device and obviously improve the luminous efficiency of the device.

The invention discloses a display panel and a display device, and belongs to the technical field of display. The display panel comprises a driving backboard, a first electrode layer, a pixel definition layer, an organic light-emitting layer and a second electrode layer, the first electrode layer is provided with a plurality of first anodes and a plurality of second anodes which are separately arranged, the pixel definition layer is provided with a plurality of first-class pixel openings and a plurality of second-class pixel openings, and orthographic projections of the first-class pixel openings on the driving backboard are located in orthographic projections of the corresponding first anodes on the driving backboard; the orthographic projection of the second type of pixel openings on the driving back plate is overlapped with the orthographic projection of the corresponding second anodes on the driving back plate; wherein the side, facing the first type of pixel openings, of the part, covering the first anodes, in the pixel definition layer is provided with a first concave structure, and the side, facing the second type of pixel openings, of the part, covering the second anodes, in the pixel definition layer is a plane. Therefore, the light-emitting efficiency of each light-emitting device can be improved, and the overall efficiency of the display panel is further improved.

According to the deep ultraviolet LED device provided by the invention, a first stress regulation and control layer and a second stress regulation and control layer are sequentially arranged between an electron injection layer and a quantum well active layer, and the Al component content x2 of the first stress regulation and control layer and the Al component content x3 of the second stress regulation and control layer meet the following relations: x3 < = (x4 + x5) / 2, x2 > = (x1 + x3) / 2, x4 > x3 > x5; according to the invention, by regulating and controlling the Al component content of each layer, the lattice mismatch between the second stress regulation and control layer and the quantum well active layer is reduced, and the lattice mismatch among the electron injection layer, the first stress regulation and control layer and the second stress regulation and control layer is reduced, so that the tensile stress can be applied to the quantum well active layer, and the performance of the device is improved. Therefore, the pressure stress generated by the bottom epitaxial structure on the quantum well active layer is compensated, and the light-emitting efficiency of the deep ultraviolet LED device is finally improved.

The invention belongs to the technical field of optical communication chips, and particularly relates to an HEMT (High Electron Mobility Transistor)-driven near ultraviolet bidirectional optical communication monolithic integrated chip with the wavelength of 365 nm and a preparation method thereof. Functions of an optical transmitter, an optical receiver and a driver are integrated into one chip, light emitted by a transmitting end is coupled into an optical waveguide and is detected by a photoelectric detector, an optical signal is converted into an electric signal, information transmission in the chip is completed, and a bidirectional optical communication link can be constructed without two sets of optical transmitters and optical receivers; the DBR Bragg reflection layer is adopted to reflect emergent light in all directions back to the waveguide of the straight waveguide area, so that the emergent light is transmitted to a receiving end along the waveguide of the straight waveguide area, by designing the material and period of the DBR, about 70% of the emergent light can be reflected, and the detection accuracy is improved; the integrated HEMT drive reduces the size and complexity of the whole circuit, the HEMT can still keep good linear performance under high current, distortion is reduced, and the stability of LED light output is ensured.

The invention discloses a boron-containing organic compound and an organic electroluminescent device prepared from the same, and belongs to the technical field of semiconductors. The structure of the organic compound is shown as a general formula (1), # imgabs0. When the compound is used as a doping material in a light-emitting layer material of an OLED light-emitting device, the compound can be used as a light-emitting layer green light doping material of the organic light-emitting device, so that the light-emitting efficiency of the device is improved, and the service life of the device is prolonged.

The invention relates to an organic compound, and an organic electroluminescent device and an electronic device comprising the same. The structural formula of the organic compound comprises the structure shown in the formula I. When the organic compound is applied to the organic electroluminescent device, the performance of the device can be remarkably improved. # imgabs0 #

The invention belongs to the field of organic electroluminescence, and discloses an organic electroluminescence material as well as a preparation method and application thereof. The structure of the organic electroluminescent material is as shown in a chemical formula I: # imgabs0 #. According to the organic electroluminescent material compound provided by the invention, an aryl-substituted dibenzofuran group and a triarylamine group are bridged through a naphthylene group to form a mother nucleus main body, the rigid dibenzofuran structure can effectively enhance the structural stability, and the existence of the triarylamine group can improve the hole transport efficiency of the material; furthermore, the naphthylene group is bridged between the two main body structures, so that a more efficient conjugated system can be formed, the electron mobility of the whole material is improved, and the device has high luminous efficiency and long service life, and can maintain lower driving voltage at the same time.

The invention provides a light-emitting diode chip and a preparation method thereof, and the preparation method of the light-emitting diode chip comprises the steps: providing a substrate needed by growth, and sequentially depositing an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer on the substrate; preparing an N-type conductive through hole in the P-type semiconductor layer; preparing a current expansion layer on the P-type semiconductor layer and the N-type conductive through hole; preparing a current blocking layer on the current expansion layer, the P-type semiconductor layer which is not covered by the current expansion layer and the N-type conductive through hole which is not covered by the current expansion layer; preparing a current blocking layer through hole in the current blocking layer; preparing a first semiconductor layer on the current blocking layer and the current blocking layer through hole; stripping the substrate to completely expose the bottom of the N-type semiconductor layer; preparing a second semiconductor layer at the bottom of the N-type semiconductor layer; and preparing an N-type bonding pad on the first semiconductor layer.

According to the GaN-based LED epitaxial structure, the preparation method thereof and the LED chip provided by the invention, electron leakage is reduced through the electron blocking layer, and meanwhile, the hole injection layer comprising the thin AlN layer is adopted between the multi-quantum well layer and the electron blocking layer in the epitaxial structure, so that the barrier barrier height during hole transport can be reduced, and the hole transport efficiency can be improved. In addition, an effective path for hole tunneling is provided, energy during hole injection is increased, hole injection efficiency is remarkably improved, the concentration of holes injected into the multi-quantum well layer is increased, and then the luminous efficiency of the LED is improved.

The invention belongs to the field of organic electroluminescent materials, and discloses a blue light host material, a preparation method and an organic electroluminescent device. The structure of the blue light host material is as shown in a chemical formula I: # imgabs0 #. After the blue light host material provided by the invention is applied to the organic electroluminescent device, the driving voltage of the photoelectric device can be reduced, the luminous efficiency of the photoelectric device can be improved, and the service life of the photoelectric device can be prolonged.

The invention discloses a mixed A-site cation chiral perovskite diode and a preparation method thereof, and relates to the field of electroluminescent technology and manufacturing. The device mainly comprises a cathode, a light-emitting layer, an anode, an electron transport layer and a hole transport layer. A chiral factor is introduced into a traditional perovskite LED device in a mixed A-bit mode, and the LED device capable of directly emitting polarized light is prepared. Compared with an existing commercial CP-LED indirect polarized light emission mode, the efficiency can be better improved, the structure can be better simplified through a direct mode, the characteristic can still be kept after part of chiral cations are introduced, the luminous efficiency of the CP-LED is improved, the color purity is high, and the adjustable luminous wavelength can be achieved by adjusting and controlling the proportion of doped chiral cations.

The invention relates to a gyrator and method for plant microgravity effect simulation, the gyrator comprises a main body box and a movable light source, the main body box comprises a plurality of modules spliced in series, the modules are provided with a plurality of clamps, and the clamps are used for placing plant culture containers and driving the plant culture containers to rotate; the movable light source is arranged on the front side of the main body box, the distance between the movable light source and the main body box is adjustable, and the movable light source is used for providing illumination for the plant sample. The device has the beneficial effects that the technical problem that the existing domestic microgravity simulation device cannot perform large-scale measurement and development condition tracking on mature plants is solved, and the experimental materials for the existing simulator are animal cells, plant seedlings, single plant adult seedlings and the like; and large-scale microgravity simulation of the overground part of the mature plant in a unified environment cannot be met. By means of the gyrator, the growth and development reactions of the overground parts of various plants under microgravity can be tested in batches.

The invention belongs to the field of organic electroluminescence, and provides a metal iridium complex, a preparation method thereof and an organic electroluminescent device. The structural general formula of the metal iridium complex is shown in the specification. The metal iridium complex provided by the invention has the advantages of low evaporation temperature, high photo-electrochemical stability, high luminous efficiency, long device life and the like, the preparation method provided by the invention is simple in process, the prepared product is high in purity and suitable for industrial production, and the problem that the luminous efficiency of an existing luminous material is insufficient is solved.

The invention provides a semiconductor laser element and a light-emitting device. An electron blocking layer is arranged between a second coating layer and a second waveguide layer of the semiconductor laser element; the second semiconductor layer is doped with a P-type dopant, the P-type dopant in the electron blocking layer has at least one doping concentration peak, the doping concentration of Mg at the doping concentration peak is smaller than the maximum doping concentration of the P-type dopant in the second semiconductor layer, and the P-type dopant in the electron blocking layer gradually approaches the direction of the electron blocking layer. The doping concentration of the P-type dopant in the second coating layer is provided with a plurality of subareas, and the doping concentration curve of the P-type dopant is gradually reduced along the plurality of subareas. Due to the descending trend of the Mg doping concentration in the second semiconductor layer, it can be guaranteed that the second semiconductor layer can provide enough holes, the hole injection efficiency in the quantum well layer is improved, and the light emitting efficiency is improved. Meanwhile, due to the arrangement of the second semiconductor layer, light absorption can be reduced, and the light emitting effect of the device is improved.

The invention belongs to the field of light-emitting diodes, and relates to a light-emitting diode based on a core-shell composite structure hole blocking layer and a preparation method thereof.The light-emitting diode comprises a cathode substrate, the hole blocking layer, a porous insulating layer and a porous anode, wherein the pores of at least one of the hole blocking layer, the porous insulating layer and the porous anode are also filled with a light-emitting active material; the hole blocking layer is composed of a composite material with a core-shell structure, the composite material with the core-shell structure adopts a conductive material as a core layer and a charge transport material as a shell layer, the porous core-shell hole blocking layer is used for replacing a common charge transport material, efficient composite luminescence of current carriers can be achieved, and the hole blocking layer is a porous hole blocking layer. And high-efficiency transmission of charges in a bulk phase can be ensured, and a high-performance light-emitting diode device is realized.

The invention discloses an organic iridium metal complex luminescent material and a preparation method thereof, and an organic electroluminescent device, the organic iridium metal complex luminescent material can be used as a doping material of a luminescent part of the organic electroluminescent device, and because the organic iridium metal complex luminescent material has more benzene ring structures and is relatively symmetrical, the luminescent part of the organic electroluminescent device can be used as a doping material of the luminescent part of the organic electroluminescent device. Therefore, the wavelength of the fluorescence can be adjusted by changing the types and the number of the substituent groups on the benzene ring, so that the purposes of high luminous efficiency and prolonging of the service life of a device are achieved.

The invention relates to the technical field of organic electroluminescent devices, and discloses a fluorine-containing pyrimidine derivative organic compound and application thereof, a perovskite solar cell and an organic electroluminescent device. The organic compound has a structure as shown in a formula (I). The fluorine-containing pyrimidine derivative organic compound provided by the invention can improve the performance of a device, reduce the driving voltage, improve the current efficiency and prolong the service life of the device. # imgabs0 #