The invention relates to the technical field of
crystal material preparation, in particular to a ternary layered
selenide Ge < 0.85 > Bi < 2.15 + x > Se < 4 >
semiconductor material and a preparation method thereof. The preparation method comprises the steps that
germanium powder,
bismuth powder and
selenium powder are weighed according to the
molar ratio in the
chemical formula Ge0. 85Bi2.15 + xSe4, x is larger than or equal to 0 and smaller than or equal to 0.06, the weighed raw materials are evenly mixed and then placed in a
quartz tube, and the
quartz tube is sealed after vacuumizing; placing the vacuum-sealed
quartz tube in a
heating furnace, raising the temperature from
room temperature to 900-950 DEG C, preserving heat for 12-24 hours at the temperature, and taking out the quartz tube from the
heating furnace for
quenching and cooling after the heat preservation is finished; and placing the quenched and cooled quartz tube in the
heating furnace again, raising the temperature from
room temperature to 540-560 DEG C, preserving heat for 3-5 days at the temperature, and performing annealing treatment to obtain the ternary layered
selenide Ge0. 85Bi2.15 + xSe4
semiconductor material. According to the preparation method, the technical problem that a GeBi2Se4
system is difficult to obtain a
single phase is successfully solved by accurately regulating and controlling the proportion of Ge / Bi and adopting a high-temperature
quenching and low-temperature long-time annealing process.