2918 results about "Pixel array" patented technology

Collapses of pillars are suppressed. An optical detecting device includes a pixel array section having multiple pixels that are arranged two-dimensionally therein. Further, each pixel of the multiple pixels includes a photoelectric converting section provided on a semiconductor layer and a metasurface structure that is arranged on a light incidence surface side of the semiconductor layer and that guides incident light to the photoelectric converting section. Moreover, the metasurface structure includes multiple pillars that are arranged at distances therebetween which are shorter than a wavelength of the incident light and a transparent support that connects and supports at least some of the multiple pillars.

A pixel array includes photodiodes and a color filter array. A first fraction of the photodiodes is included in CIS pixels and a second fraction of the photodiodes is included in hybrid CIS / EVS pixels. The photodiodes are arranged into groupings. The color filter array includes first, second, and third color filters arranged in a mosaic pattern over the photodiodes. Each grouping includes a plurality of subgroupings including a first subgrouping disposed under at least one of the first color filters, a second subgrouping disposed under at least one of the second color filters, and a third subgrouping disposed under at least one of the third color filters. Each of the first, second, and third subgroupings includes at least one CIS pixel, and at least one of the first subgrouping of photodiodes further includes at least one hybrid CIS / EVS pixel disposed under at least one of the first color filters.

A radiation imaging apparatus includes a pixel array including, in an imaging region where a plurality of pixels is arranged in a matrix, a detection pixel group in which a plurality of detection pixels is arranged in a row direction, and a control unit configured to control imaging. A grid having a stripe structure in which a radiation transmissive layer and a radiation absorption layer that are strip-shaped and extend in a first direction are alternately arranged in a second direction is disposed and can be used in the radiation imaging apparatus. The radiation imaging apparatus further includes a determination unit configured to determine whether a mode in which the imaging using signals from the detection pixel group is controlled is executable by the control unit, based on information about an angle between the row direction and the first direction.

A pixel circuit includes a pixel array and a color filter. The pixel array includes pixels arranged in rows and columns, and each pixel includes a photodiode configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photodiode to transfer the image charge out from the photodiode. The color filter array includes color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the pixels is coupled to a first readout circuit, and the plurality of pixels includes a first subset of the pixels not coupled to a second readout circuit and a second subset of the pixels coupled to the second readout circuit. Two diagonally arranged pixels are coupled together to share a floating diffusion, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked first n-GaN layer, first MQW layer, p-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the p-GaN layer. A plurality of mesas is formed by forming, within each aperture, a second MQW layer and a second n-GaN layer above each second MQW layer. The second n-GaN layer and second MQW layer of each mesa form a respective mesa LED with the p-GaN layer. The first n-GaN layer and first MQW layer form a lower LED with the p-GaN layer.

A stretchable pixel array substrate includes a base, pixel structures and a gate driving circuit electrically connected to the pixel structures. The base has an active area and a peripheral area outside the active area. The peripheral area has openings to define first islands, second islands and first bridges of the peripheral area. An area of each of the first islands is greater than an area of each of the second islands. At least a part of the first bridges is connected between the first islands and the second islands. The pixel structures are disposed on the active area of the base. The gate driving circuit includes first parts disposed on the first islands and second parts disposed on the second islands and electrically connected to the first parts.

The invention discloses a spectral polarization imaging three-dimensional reconstruction method and device based on a pixel array, and a medium, and relates to the technical field of image processing, and the method mainly comprises the steps: collecting original images, which are fixedly obtained by pixels, of corresponding spectral bands and polarization angles; extracting sub-image information under each spectral band and polarization angle according to pixel positions, and stacking to generate a four-dimensional data volume; constructing a polarization geometric model according to the four-dimensional data body, and constructing an actual expression of the linear polarization degree in combination with a Fresnel reflection theory; constructing a redundant dispersion constraint equation and a theoretical expression of the relation between the diffuse reflection spectrum polarization degree and the incident angle and the imaging target refractive index; substituting the redundant dispersion constraint equation into a combined residual function of the theoretical expression and the actual expression, and performing parameter inversion on the combined residual function; and carrying out three-dimensional shape recovery under imaging target surface normal reconstruction based on an inversion result. According to the method, time delay and space registration errors caused by time-sharing acquisition are eliminated.

A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

Various structures for a hybrid pixel array are disclosed. The hybrid pixel array includes a combination of square photodiode (PD) pixel structures and split PD pixel structures. Square PD pixel structures include one photodiode per pixel unit while split PD pixel structures include two photodiodes per pixel unit. In certain instances, square PD pixel structures are used for green light pixels and split PD pixel structures are used for blue and red light pixels in the hybrid pixel array. The combination of square PD pixel structures and split PD pixel structures provides autofocus capability with higher signal strengths. Various techniques for row addressing and readout from the hybrid pixel array are also disclosed.

A reduction in image quality and a reduction in transfer efficiency are suppressed. An imaging apparatus according to an embodiment includes a plurality of pixels arrayed in a two-dimensional lattice pattern, in which each of the pixels includes a photoelectric conversion unit on a first surface side of a semiconductor substrate, a vertical gate electrode on the semiconductor substrate so as to be close to the photoelectric conversion unit from a second surface side opposite to the first surface, a gate insulating film between the vertical gate electrode and the semiconductor substrate, a transfer gate electrode connected to the vertical gate electrode on the second surface of the semiconductor substrate, and a first diffusion region on a second surface side of the semiconductor substrate. A diameter of the vertical gate electrode is greater on the photoelectric conversion unit side than on the transfer gate electrode side.

The resolution-customizable micro spectrometer based on the transverse dispersion metasurface comprises a dispersion metasurface array structure and a focal plane pixel array, and the dispersion metasurface array structure comprises a plurality of dispersion metasurface sub-arrays which are distributed in an array mode and used for preliminary spectrum decoupling and directional convergence. The dispersion metasurface subarray comprises a plurality of dispersion metasurface units and all-dielectric substrates thereof, the dispersion metasurface units are nano-columns with four-fold symmetry, the nano-columns are periodically arranged, and the phase of transmission light is dynamically regulated and controlled according to the frequency omega of incident light. The focal position (x ', y') of the transmission light on the focal plane is in a linear mapping relation along with the change of the omega; the focal plane pixel array comprises a multi-element plane array composed of a plurality of pixels, and the multi-element plane array is in pixel-level registration with the dispersion metasurface sub-array. According to the invention, pixel-level precise condensation is realized, crosstalk is effectively inhibited, the detection precision is improved, and real snapshot spectral imaging is realized.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a dielectric layer formed over a lower n-type gallium nitride (n-GaN) layer. A first aperture and a second aperture are formed through the dielectric layer and extending to the lower n-GaN layer, the second aperture being narrower than the first aperture. A mesa is formed within the first aperture by successively forming a mesa n-GaN layer, a mesa MQW layer above the mesa n-GaN layer, and a mesa p-GaN layer above the mesa MQW layer. A pyramid having sidewalls is formed within the second aperture by successively forming a pyramidal n-GaN layer, a pyramidal MQW layer, and a pyramidal p-GaN layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer form a mesa LED. The pyramidal n-GaN layer, pyramidal MQW layer, and pyramidal p-GaN layer form a pyramid LED.

Systems and methods for varying an intensity of pixels of displays are provided. A display subsystem may include a display driver for receiving image frame data and commands from an image or data source, including pixel intensity values for bit planes of an image frame; a parser for receiving the image frame data and the commands, and configured to determine a drive waveform having an pixel drive value and a pixel drive time interval for each bit plane of the image frame data; a display backplane for receiving the drive waveform, the display backplane including a pixel array comprising an array of pixels, each pixel driven by a pixel circuit; and display driver circuitry for driving the pixels in accordance with the drive waveform; and wherein an intensity of the pixel varies for each bit plane according to the pixel drive value and the pixel drive time interval.

A display device with a touch detection function that can be manufactured while suppressing price increases. The display device includes: a pixel array; a plurality of drive electrodes; a plurality of detection electrodes; first and second drive wiring lines, each facing one end and the other end of the plurality of drive electrodes and supplying an AC voltage thereto; first and second reference voltage wiring lines, each facing one end and the other end of the plurality of drive electrodes and supplying a first reference voltage thereto, wherein the first reference voltage wiring line is farther from the one end of the plurality of drive electrodes than the first drive wiring line, and the second reference voltage wiring line is farther from the other end of the plurality of drive electrodes than the second drive wiring line; a plurality of first switch circuits, each coupling one end of the drive electrodes to one of the first drive wiring line and the first reference voltage wiring line; and a plurality of second switch circuits, each coupling the other end of the drive electrodes to one of the second drive wiring line and the second reference voltage wiring line.

An image sensor includes a pixel array having a first pixel group and a second pixel group. Each pixel group includes a plurality of pixels, with each pixel having a photosensitive element, a sense node and a sample-and-hold stage. A driver circuit of the image sensor, during an exposure phase, is configured to operate the pixels of the first pixel group to perform a first exposure of a first duration, and to operate the pixels of the second pixel group to perform a second exposure of a second duration followed by a third exposure of a third duration. An output circuit of the image sensor, during a readout phase, is configured to read out a first photo signal from each pixel of the first pixel group, and to read out a second photo signal and a third photo signal from each pixel of the second pixel group.

A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels each comprising two photodiodes, a floating diffusion coupled between the two photodiodes, and two transfer transistor coupled between the two photodiodes and the floating diffusion. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each pixel is coupled to a first readout circuit. The pixels include a second subset of the pixels coupled to a second readout circuit and a first subset of the pixels not coupled to the second readout circuit. Each pair of pixels arranged in two adjacent rows includes a first pixel included in the second subset of the pixels and a second pixel included in the first subset of the pixels and disposed underneath one of the color filters.

The present application provides a photosensitive chip and a distance measurement device, the photosensitive chip includes a SPAD pixel array, a pixel row and column control circuit and a readout circuit; the SPAD pixel array includes a plurality of SPAD pixel units, the SPAD pixel units are used to collect photons to output pulse signals; the pixel row and column control circuit includes a plurality of gating subcircuits, the plurality of gating subcircuits correspond to the plurality of SPAD pixel units one by one, the gating subcircuits include a first enabling unit, a second enabling unit and an output circuit, the output circuit is connected to the first enabling unit and the second enabling unit, and is used to output a response signal to activate the SPAD pixel unit corresponding to the gating subcircuit; the readout circuit is used to receive the response signal to output a histogram, and the histogram is used to record the number of pulse signals. The solution provided by the present application can realize the rapid gating of the SPAD pixel array, which helps to improve the accuracy and stability of distance measurement.

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The invention discloses a display panel and a display control method, and the display panel comprises a display pixel array which comprises a plurality of display pixels, a pixel circuit corresponding to each display pixel comprises a first charging path, the first charging path is provided with at least one switch, and the number of the at least one switch is smaller than or equal to 2; the data driving line is connected with the first end of the first charging path; and the driving controller is used for providing charging voltage for the charging path through the data driving line, so that the display pixels are charged.

An apparatus includes, in some implementations, at least one image sensor, a plurality of metalenses, and readout and processing circuitry. The at least one image sensor includes a plurality of pixel arrays, each of the which is associated, respectively, with a different one of a plurality of optical channels configured for detection of incoming light rays of a particular wavelength or a particular range of wavelengths centered on the particular wavelength. Each of the metalenses is disposed, respectively, in a different one of the optical channels and is configured, respectively, to focus incoming light rays onto a different one of the pixel arrays. The readout and processing circuitry is operable to read out signals from the pixel arrays and to generate a respective lower-resolution image for each of the optical channels, and to process the lower-resolution images to obtain a higher-resolution monochromatic image. Methods of operation are described as well.

The invention provides a Mini led display screen dead pixel detection and positioning method, device and system based on deep learning, and the method comprises the steps: applying a preset driving signal sequence to a pixel array of a Mini led display screen line by line, obtaining the brightness feedback data of each pixel in different driving stages, obtaining a brightness response sequence, and carrying out the detection and positioning of the dead pixel of the Mini led display screen. Carrying out spatial recombination processing on the brightness response sequence according to a physical arrangement structure of the pixel array to generate a brightness response matrix, carrying out local region feature difference analysis on the brightness response matrix, identifying a brightness response abnormal region, generating a candidate dead pixel position set, and obtaining a candidate dead pixel position set; and calling a pre-trained dead pixel recognition network to carry out feature learning processing on the candidate dead pixel position set, outputting a dead pixel probability corresponding to each candidate dead pixel position, screening the candidate dead pixel position set based on the candidate dead pixel probability, removing candidate positions with the dead pixel probability lower than a preset condition, and generating a dead pixel positioning result set. According to the invention, the accuracy and reliability of detecting and positioning the defective pixels of the Mini LED display screen can be effectively improved.

An event-based vision sensor is provided. The event-based vision sensor comprises an event-based vision sensor pixel array, an always-on row scanner, an always-on column scanner, a major row scanner and a major column scanner. The event-based vision sensor pixel array comprises a plurality of always-on pixels and a plurality of major pixels. The always-on row scanner and the always-on column scanner are for the plurality of always-on pixels. The major row scanner and the major column scanner are for the plurality of major pixels. When the event-based vision sensor is configured to be operated in an always-on mode, the plurality of major pixels are powered down, and the plurality of always-on pixels, the always-on row scanner and the always-on column scanner are in operation.

In an embodiment, an image sensing device includes a pixel array including a plurality of unit pixels, wherein each of the unit pixels comprises a plurality of sub-pixels, wherein a first isolation region is formed in an edge region of the plurality of sub-pixels, wherein a second isolation region is formed from the first isolation region toward a central portion of each of the sub-pixels, wherein the second isolation region comprises: a first inner isolation region protruding from one region of the first isolation region toward the central portion of the sub-pixel; and a second inner isolation region aligned with the first inner isolation region and protruding from another region of the first isolation region toward the central portion of the sub-pixel, wherein a third isolation region is formed in a direction orthogonal to a direction in which the first inner isolation region and the second inner isolation region.

An analog-to-digital converter circuit according to some example embodiments includes a ramp signal generator configured to generate a first ramp signal which rises with a first inclination and a second ramp signal which falls with a second inclination, and a comparison circuit configured to output a comparison result between the synthesis signal of a pixel signal output from a pixel array and the first ramp signal and the second ramp signal.

An image sensor may include an array of imaging pixels arranged in rows and columns. Each imaging pixel may include a photodiode, an overflow capacitor, an overflow transistor that is interposed between the photodiode and the overflow capacitor, a floating diffusion region, a transfer transistor that is interposed between the photodiode and the floating diffusion region, a voltage supply, and a reset transistor that is interposed between the floating diffusion region and the voltage supply. The voltage supply may provide a voltage at a first magnitude that is less than the pinning voltage for a first portion of a reset period and may provide the voltage at a second magnitude that is greater than the pinning voltage for a second portion of the reset period.

The invention discloses an image processor, a camera module, electronic equipment and a photographing method. The image processor comprises at least one control unit, at least two selection units and a pixel array, the pixel array comprises at least two pixel blocks; each selection unit is connected with one control unit, and each selection unit is respectively connected with the control ends of at least one row of pixel units or at least one column of pixel units in the pixel array; wherein different selection units are connected with pixel units in different rows or pixel units in different columns in the pixel array; under the condition that the control unit receives a first control signal, pixel blocks corresponding to at least one selection unit in the pixel array are controlled to be opened through the at least one selection unit; and under the condition that the control unit receives a second control signal, controlling the pixel block corresponding to at least one selection unit in the pixel array to be closed through the at least one selection unit.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked lower n-GaN layer, lower MQW layer, lower p-GaN layer, upper n-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the upper n-GaN layer. A plurality of mesas is formed by forming, within each aperture, a mesa n-GaN layer, a mesa MQW layer above each mesa n-GaN layer, and a mesa p-GaN layer above each mesa MQW layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer of each mesa form a respective mesa LED. The lower n-GaN layer, lower MQW layer, and lower p-GaN layer form a lower LED.

The invention provides a display panel and a display device, and belongs to the technical field of display driving. The display panel comprises a gate drive unit and a frequency division unit, a display area of the display panel comprises a pixel array composed of a plurality of pixel circuits arranged in an array mode, the gate drive unit comprises a plurality of cascaded gate drive circuits, and each gate drive circuit is connected with one row of pixel circuits. The frequency division unit comprises a plurality of frequency division circuits, and the pixel circuit is used for refreshing and displaying according to a driving signal output by the gate driving circuit. And at least one frequency dividing circuit is arranged between each gate driving circuit and the pixel circuit. The frequency division unit is used for controlling the pixel circuits in partial areas of the display area to input driving signals through the frequency division circuits during the display period of one frame of image, and the pixel circuits in other areas do not input the driving signals, so that the pixel circuits in different areas in the display area carry out display at different refresh rates. Therefore, balance of the refresh rate and the power consumption of the display panel can be realized.

The invention relates to the technical field of optical detection, and discloses an object surface three-dimensional topography measurement method based on optical interference, which comprises the following steps: acquiring a mixed time domain interference signal sequence in an axial scanning process; extracting seed pixels and constructing a spatial topology connectivity feature matrix; introducing fractional Fourier transform, and constructing a joint decoupling objective function containing a frequency domain nonlinear phase distortion evaluation index and a time domain physical invariant evaluation index; executing multi-stage optimization for the seed pixels, and locking a global optimal rotation angle; array self-adaptive decoupling is executed in combination with the spatial topology connectivity feature matrix, and an optimal rotation angle matrix is generated; and performing signal decoupling and reconstruction on the mixed signal, and extracting the absolute surface height of each pixel point to generate three-dimensional shape data. According to the invention, through multi-dimensional joint decoupling and spatial prior constraint, the problem of phase decoupling caused by film interference aliasing is solved, and the calculation overhead of a large-pixel array is reduced while the measurement precision is improved.

The utility model describes a pixel circuit and a pixel array of an image sensor, and the pixel circuit comprises a first photosensitive unit which is configured to receive an optical signal in a first exposure duration so as to generate a first image signal; a first floating diffusion node connected to the first photosensitive unit; the first transfer transistor is connected between the first photosensitive unit and the first floating diffusion node; the gain control circuit is connected with the first floating diffusion node so as to collect a second image signal generated under a second exposure time length and collect a third image signal generated under a third exposure time length, and the second exposure time length is smaller than the first exposure time length and smaller than the third exposure time length; the gain control circuit at least stores the third image signal in the overflow unit and then outputs the third image signal; the reset circuit is connected between the gain control circuit and the first power supply voltage; the readout circuit is connected to the first floating diffusion node. According to the pixel circuit, the dynamic range can be enlarged, and the problem of motion artifacts is solved.