3908 results about "Quantum dot" patented technology

The invention discloses an intelligent photoelectric theodolite aerial target positioning and tracking system, which relates to the technical field of photoelectric detection, and comprises a multi-mode photoelectric sensor module integrating visible light, infrared thermal imaging, a laser radar and a polarized light sensor and supporting spectrum adaptive switching; the dynamic noise suppression processing module is used for eliminating environmental interference based on a time-space domain hybrid filtering algorithm; the multi-target tracking control module adopts a time-sharing partition scanning strategy and a graph neural network data association algorithm; the anti-interference servo driving module is used for realizing stable tracking under strong disturbance through inertial navigation-visual fusion compensation; and the edge computing platform is used for deploying a lightweight deep learning model to complete target recognition and trajectory prediction. According to the invention, through interdisciplinary collaboration of quantum dot materials, graph neural networks and physical equation constraints, the bottleneck of a single technology is broken through; and through closed-loop optimization of dynamic anti-interference and edge intelligence, full-link enhancement of'perception-decision-execution 'is realized.

The invention relates to a control method of a digital ultrasonic flaw detector calibrating device. The control method comprises the following steps: acquiring shape data and material parameters of a to-be-detected material, calling a matched standard test block, calculating adaptive ultrasonic frequency and flaw detector parameters, creating and solving a multi-objective optimization model, and planning a detection path of the to-be-detected material based on an optimal solution; emitting ultrasonic waves with matched frequency to implant the quantum dot mark array to carry out fluorescence-ultrasonic dual-mode signal correlation calibration; scanning according to a planned detection path, establishing a time-varying channel model to predict a current time delay variation, extracting a fundamental frequency and a harmonic component of a probe excitation pulse by adopting an autocorrelation algorithm to serve as a reference, constructing a state vector of a filter based on the predicted current time delay variation, and performing phase correction on a received signal to obtain a phase correction signal; and analyzing the defect of the to-be-detected material based on the corrected receiving signal. By integrating material parameter dynamic modeling, multi-modal signal collaborative calibration and adaptive path optimization, the detection precision and efficiency under complex working conditions are improved.

The invention belongs to the technical field of intelligent lighting, and discloses an intelligent adjustment method and system for the spectrum of a quantum dot light-emitting lamp. The objective of the invention is to solve the problem that an existing lighting system cannot meet personalized healthy lighting requirements. The method comprises the following steps: firstly, acquiring user biological rhythm, environment spectrum, use scene, user preference and physiological health data through multi-dimensional data acquisition, and constructing a feature data set; then human factor optical feature extraction and cross-situation demand analysis are carried out, and a spectral response model is established; carrying out quantum dot material photoelectric characteristic mapping and spectrum synthesis modeling based on the model, and determining a luminescence parameter space; constructing a spectrum optimization model, performing multi-objective optimization by comprehensively considering visual comfort, energy efficiency and health influence, and generating a dynamic spectrum regulation and control strategy; closed-loop verification and adaptive optimization are carried out based on real-time physiological feedback, and an intelligent spectrum adjustment scheme is formed. According to the invention, the advantage of spectrum adjustability of the quantum dot material is fully exerted, and real personalized intelligent illumination is realized.

The invention discloses a multi-dimensional holographic image real-time rendering method and system based on dynamic light field modulation, and relates to the technical field of holographic display, the method is applied to terminal equipment and a server, the terminal equipment determines a space coordinate range based on quantum dot super-structure surface characteristics by obtaining related parameters of a target holographic scene, and the real-time rendering of a holographic image is realized. A quantum dot excitation sequence is generated to regulate and control the micro-nano structure of the super-structure surface, a joint coding model is constructed, a target light field modulation instruction set is generated through optimization, corresponding multi-dimensional light field data is requested from a server, and a holographic scene is generated through processing, fusion and rendering; the server receives the request, calls original holographic data, constructs a coding model and a compression model, and sends multi-dimensional light field data subjected to entropy compression to the terminal through a multi-channel transmission protocol; according to the method, efficient real-time rendering of the multi-dimensional holographic image is achieved, the rendering efficiency and quality are improved, and the method is suitable for scenes with high requirements for real-time performance of the holographic image.

The invention provides an endangered animal monitoring method based on a multi-mode floating gate type photoelectric synapse transistor, realizes multi-mode fusion of images (optical signals) and sounds (electric signals) by utilizing the light absorption capability of quantum dots and the high carrier mobility of a two-dimensional channel material, and belongs to the technical field of sensing, storage and calculation integration and endangered animal identification and monitoring. According to the method, a photoelectric synapse device is used as a reservoir, and input time sequence signals are respectively applied to a multi-mode fused photoelectric synapse transistor in the form of light and electric pulse. And along with the co-stimulation of light and electric pulse, the change response of source-drain current is generated, and the fusion processing of the multi-mode signal is realized. By adopting the method, a human multi-sensory fusion signal processing mode is successfully simulated, and accurate recognition under complex and changeable conditions can be realized by utilizing a mode of complementation of visual signals and auditory signals. Under an extreme environment or a high noise condition, edge processing and identification can be carried out on pictures and sounds of endangered animals, and a high-accuracy monitoring result can be obtained without a large amount of data return, so that the energy consumption is reduced and the monitoring efficiency is enhanced.

The invention belongs to the technical field of environmental monitoring, and particularly relates to a super-resolution fluorescence imaging analysis method based on hypersensitive fluorescent quantum dots. The quantum dots have high water solubility and stability, and can emit narrow-bandwidth fluorescence due to unique optical properties of the quantum dots. According to the invention, a quantum dot luminescent material is adopted to construct an ultra-high resolution microscope system which can be used for observing composite behaviors between micropollutants and quantum dots on a microscopic scale, and a three-dimensional fluorescence microspectrometer and a computer vision algorithm are integrated; the whole reaction process is deduced according to the evolution of the three-dimensional fluorescence spectrum between the micro-pollutants and the quantum dots in different space (concentration), time (reaction process) and chemical dimensions, and a multi-dimensional fingerprint spectrum is formed according to the whole reaction process and is used for identifying and tracing the micro-pollutants. The method has the advantages of being high in detection speed, high in fingerprint performance and less in interference of background factors.

The invention relates to the technical field of engine testing, and discloses a reliability test method and system for a small general engine, and the method comprises the steps: collecting an engine vibration signal through a superconducting quantum interferometer, and collecting a temperature distribution parameter through a quantum dot temperature sensor; performing combined testing of cold and hot shock, high-load operation and random working conditions, and synchronously monitoring dynamic response characteristic data; constructing a Weibull probability model, and determining key influence factors through a global sensitivity analysis method; acquiring a surface roughness parameter by adopting a field emission scanning electron microscope, obtaining a material component parameter through energy spectrum analysis, and establishing a parameter mapping relation; establishing a vibration and temperature early warning system, executing a graded sweep frequency excitation and abrasive particle acceleration test, and recording a parameter degradation process; and generating a three-dimensional parameter cloud picture, and outputting a reliability test report. According to the method, the reliability of the small general engine can be comprehensively and efficiently evaluated, and a scientific basis is provided for design, maintenance and improvement of the engine.

The invention discloses a preparation method of a silicon-based quantum dot tracer. The silicon-based quantum dot tracer agent disclosed by the invention is prepared by taking 3-aminopropyltrimethoxysilane, sodium citrate, urea and deionized water as raw materials and adopting a hydrothermal synthesis method. The silicon-based quantum dot tracer agent is synthesized by using 3-aminopropyltrimethoxysilane as a silicon source and using the synergistic effect of double reducing agents of sodium citrate and urea, the synthesized silicon-based quantum dot tracer agent can overcome the influence of temperature and environment on the silicon-based quantum dot tracer agent, the fluorescence lifetime is prolonged, and the silicon-based quantum dot tracer agent has a relatively small particle size and can be used for preparing the quantum dot tracer agent. And inter-well tracer testing and single-well chemical testing technology research of an on-site oil field are facilitated.

A light-emitting device includes a light-emitting part. The light-emitting part contains a quantum dot. The quantum dot has a core and a shell. The shell is located outside the core. Each of the core and the shell has a hexagonal structure. The lattice constant of the core is larger than the lattice constant of the shell.

The invention discloses a liquid crystal display screen bright and dark line adjustment optimization method and system and a display screen, and relates to the technical field of liquid crystal display screens, and the method comprises the following steps: constructing a femtosecond resolution synchronous sampling matrix, employing a photoelectric hybrid probe to carry out in-phase collection on driving voltage rising edges of a plurality of sub-channels of the liquid crystal display screen, generating an original waveform database of the multi-channel driving voltage; based on an original waveform database, quantum dot calibration pulses with time marks are injected into all the sub-channels, phase deviation sequences among all the sub-channels are analyzed and extracted through timestamp linkage, and a cross-channel synchronization deviation reference baseline is established. By means of high-precision sampling and difference frequency regulation and control, approximate synchronization of multi-channel driving voltage of the liquid crystal display screen is achieved, accurate recognition is achieved, phase deviation is dynamically corrected, abnormal display phenomena such as frame skipping, ghost shadows and color cast are remarkably eliminated, and visual consistency and display stability in a high-dynamic scene are improved.

The invention discloses an ion beam polishing method for coupled silicon carbide in-situ growth based on quantum dots, and belongs to the technical field of SiC surface polishing. The preparation method of the SiC material with the quantum dot sacrificial layer grown in situ comprises the following steps: mixing a lead source, a cesium source and a solvent to obtain a CsPbBr3 precursor solution; and dropwise adding the CsPbBr3 precursor solution to the surface of the SiC material, flattening, heating for crystallization, and annealing to obtain the SiC material with the quantum dot sacrificial layer grown in situ. According to the ion beam polishing method based on quantum dot coupling silicon carbide in-situ growth, the quantum dot layer serves as the sacrificial layer of the SiC wafer, the thickness of the sacrificial layer can be effectively reduced, the flatness of the SiC surface can be remarkably improved, and the good fluorescence labeling effect can be achieved. The CsPbBr3 quantum dot prepared by the method has extremely small nano size, can deeply fill micro cracks and micro-nano scratches on the surface of a SiC wafer, is completely coupled with the micro cracks on the surface of the SiC wafer, and realizes accurate filling of defects.

The invention discloses a wafer quality analysis method based on image recognition, and particularly relates to the field of semiconductor manufacturing quality detection, which comprises the following steps: synchronously acquiring wafer two-dimensional images under visible light, infrared and ultraviolet spectrums through a multispectral and high-resolution fusion camera combination model; the structured light three-dimensional reconstruction technology is used for obtaining surface three-dimensional shape data, a self-adaptive noise suppression algorithm is applied, noise features are recognized through frequency domain analysis, filtering parameters are dynamically adjusted, targeted noise reduction is achieved, a multi-scale feature pyramid and quantum dot mark recognition fusion model is constructed, defect contours and material heterogeneous areas are extracted in a layered mode, and the defect detection precision is improved. The method comprises the following steps: extracting microstructure characteristic parameters by combining a quantum dot fluorescence labeling technology, mapping microscopic characteristics and three-dimensional shape data to a multi-modal space model, generating three-property parameters of a wafer, establishing a three-dimensional evaluation system, comprehensively judging a quality grade and outputting an analysis report, so that the precision and efficiency of wafer quality detection are remarkably improved.

The invention discloses a photoelectric wafer defect detection method, and belongs to the technical field of semiconductors. The detection method comprises the steps that the surface of a photoelectric wafer is covered with a quantum dot precursor solution, annealing is carried out, after a quantum dot film is formed, irradiation is carried out under ultraviolet light, a displayed fluorescence signal can mark defects on the surface of the photoelectric wafer, and the purpose of detecting the defects of the photoelectric wafer is achieved. The quantum dots used in the invention have excellent fluorescence efficiency and stability, and can provide a high-contrast marking effect in an SEM image. Therefore, the detection of micron-scale and nano-scale defects is more accurate, and the details are clearer. A traditional fluorescence labeling solution is limited in infiltration capacity in nanoscale defects and can only cover the surface. The quantum dots can penetrate into the defect to form a mark with the depth ratio as high as 1: 3. The depth marking capability is helpful for comprehensively knowing the internal structure of the defect and the defect extension condition. In addition, the quantum dots have excellent adaptability and multifunctionality, and show good stability and coupling effect under different types of wafer conditions.

The invention provides a quantum dot composite particle, a preparation method thereof and a quantum dot photoluminescent device containing the quantum dot composite particle. The quantum dot composite particle comprises a quantum dot, an antioxidant layer coordinated on the surface of the quantum dot and an inorganic oxide layer coating the antioxidant layer, an antioxidant of the antioxidant layer has a coordination group coordinated with the surface of the quantum dot, and the thickness of the antioxidant layer is 1-10 nm. The inorganic oxide layer is used as a first protection means of the quantum dots to block water and oxygen invasion; and the antioxidant is modified on the surface of the quantum dot to form the antioxidant layer, so that the damage of small molecules penetrating through the inorganic oxide coating layer to the quantum dot is prevented, and the stability of the quantum dot is further improved.

The invention discloses a high-reliability PbS quantum dot film, a preparation method thereof and a photoelectric device. The preparation method comprises the following steps: 1) obtaining a first quantum dot solution; 2) adding medium-chain and long-chain amine; 3) adding an anti-solvent; 4) obtaining medium-chain and long-chain amine modified PbS quantum dot solids; 5) obtaining a second quantum dot solution; (6) forming a PbS quantum dot coating; 7) forming a mercaptan solution; 8) coating the PbS quantum dot coating with a mercaptan solution; (9) annealing treatment; 10) forming a new PbS quantum dot coating, and coating the new PbS quantum dot coating with a mercaptan solution; according to the PbS quantum dot thin film and the preparation method thereof, through the induction and synergistic effect of halogen atoms, the binding capacity of halogenated mercaptan ligands and the surface of the PbS quantum dot thin film is enhanced, the surface defect state of the PbS quantum dots is effectively inhibited, and the reliability of the PbS quantum dot thin film and a photoelectric device under the conditions of high temperature, high humidity and long-time illumination is remarkably improved.

The invention discloses an electrochemical detection method of dopamine, and belongs to the technical field of analysis. According to the method, SnS2 quantum dots are loaded on Zn-MOF and modified on an electrode, then gold nanoparticles and a sulfydryl-containing dopamine aptamer single chain are sequentially fixed on the electrode, an Apt / AuNPs / SnS2QDs (at) Zn-MOF / GCE composite electrode (in an open state) is formed, an electrochemical signal of the composite electrode is greatly improved, and based on specific recognition between dopamine and an aptamer chain, the electrochemical performance of the composite electrode is improved. A large cavity of Zn-MOF is used for packaging SnS2 quantum dots with excellent electrochemical properties, electrochemical signal amplification is achieved, when a target object dopamine exists, dopamine can quench an ECL signal, an electric signal is obviously reduced (in a closed state), and therefore a linear relation between the change of the electrochemical signal and the concentration of dopamine is constructed, and the electrochemical property of the electrochemical signal is improved. Therefore, high-sensitivity and high-selectivity detection of dopamine is realized.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

A quantum device includes a semiconductor layer adapted to form a two-dimensional array of quantum dots, the semiconductor layer having a front face, a dielectric, disposed on the front face of the semiconductor layer, first gates and second gates to control the quantum dots, the first gates and the second gates extending directly over the dielectric, each second gate intersecting the first gates, charge detectors, each charge detector including a conductive island, and a charge reservoir, the conductive island of each charge detector being formed between two adjacent first gates and directly over the dielectric.

A quantum dot composite configured to emit green light or red light. The quantum dot composite including a polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, the plurality of quantum dots include a semiconductor nanocrystal core comprising indium and phosphorus. As determined by differential scanning calorimetry, the quantum dot composite exhibits an intensity of a peak between about 350° C. to about 450° C. that is about 8 times or more and about 13 times or less relative to an intensity of a peak between about 200° C. and about 300° C. in a thermogravimetric analysis graph.

The present application discloses a quantum dot, a preparation method for the quantum dot, and a photoelectric device. The quantum dot comprises a core structure and a shell structure; the shell structure wraps the core structure; the material of the core structure is selected from one or two of CdSe and ZnCdSe; the shell structure is doped with molybdenum ions. The molybdenum ions can compensate for a vacancy defect of a core-shell structure to release surface stress caused based on the vacancy defect, and coordinate exposed anions of the core-shell structure to improve the light-emitting efficiency and stability of the quantum dot.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention belongs to the technical field of immunoassay and biosensing detection, and particularly relates to a preparation method and application of an antibiotic electrochemical luminescence sensor based on a double-enhancement strategy. According to the invention, a bifunctional metal organic gel is used as a substrate, a graphite-phase carbon nitride quantum dot is used as a luminous body, and a self-assembly split aptamer walker is combined to construct the electrochemical luminescence sensor for sensitive detection of antibiotics. The sensor has the advantages of extremely high specificity and sensitivity, wide detection range, low detection limit and strong anti-interference performance, and has important scientific significance and application value in detection of antibiotic residues in the environment.

The invention discloses a Mini LED package test method and test equipment. The method comprises the following steps: performing light irradiation on Mini LED package by using a reverse light path tracking technology to obtain an interference pattern and determine a function sensitive area; injecting a quantum dot fluorescent marker into the functional sensitive area to carry out multispectral dynamic monitoring; performing surface plasma resonance spectrum scanning on the functional sensitive area to obtain surface plasma resonance response data; performing an acoustic stimulation test on the functional sensitive area according to the obtained data to obtain acoustic response data; and performing a compensation test by using the nonlinear optical material layer to obtain performance attenuation prediction data. According to the technical scheme, accurate detection and performance prediction of the miniature optical structure in Mini LED packaging are achieved, and potential early failure symptoms can be effectively recognized.

The invention relates to the technical field of semiconductor display devices, in particular to an anti-crosstalk light-emitting unit and a manufacturing method thereof, and a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro light-emitting diode layer and a reflecting layer are sequentially manufactured on a substrate from bottom to top; manufacturing a discontinuous filling layer on the surface of the reflecting layer; and grinding, thinning, cutting and splitting the substrate to form an independent discrete device. By arranging the reflecting layer covering the packaging structure and the discontinuous chip bonding layer, light emitted by the quantum dots and the micro light-emitting diodes is reflected by the reflecting layer, light crosstalk between the display units is avoided, the reflected light excites the quantum dots again to emit light, and the light efficiency is improved. The chip bonding layer and the filling and leveling layer are arranged discontinuously, so that substrate warping caused by temperature rise and fall during large-size manufacturing is avoided. When cutting and splitting are carried out, the laser technology frequency can be reduced, the mass production efficiency can be improved, and the organic layer is removed, so that the occurrence of the double-cell problem of the chip can be greatly avoided.

The invention relates to a quantum dot optical encoder measurement error dynamic compensation method and system and a storage medium. The method comprises the following steps: acquiring a multi-color-gamut code channel image according to a quantum dot optical encoder; constructing a sub-pixel level compensation network model; a code channel fine feature extraction network, a causal inference network, a decision network, a sub-pixel level positioning network, a coding and decoding network and Q learning are introduced, so that a single-factor measurement error compensation agent is constructed; parallel decomposition multi-subtask model training is adopted, the output of a causal inference network is combined, and the compensation agent strategy proportion of each influence factor is calculated, so that a measurement error compensation agent under the influence of multiple factors is constructed; and measuring error dynamic compensation is completed. By adopting the method, decoupling of coupling errors of internal and external factors can be realized, and error compensation can be performed in a more targeted manner by analyzing the strategy ratio of each compensation sub-agent, so that the measurement precision is improved.

The invention relates to a normal-temperature preparation method of an ultra-narrow emission spectrum perovskite quantum dot composite material. The method comprises the following steps: firstly, mixing wide bandgap nanocrystals with a high-polarity solvent (such as N, N-dimethylformamide and the like) to prepare a wide bandgap nanocrystal solution; respectively mixing with perovskite quantum dot reaction precursors (such as CsBr, PbBr2 powder and the like) to prepare a reaction precursor solution; and mixing the reaction precursor solution, organic acid, organic amine and the like, and then adding a reverse polar solvent to form a precipitate, thereby preparing the perovskite quantum dot composite material with the ultra-narrow emission spectrum. The perovskite quantum dot composite material with the full width at half maximum of 15 nanometers or below can be prepared at normal temperature, and the minimum full width at half maximum can reach 14.4 nanometers.

The present invention generally relates to a process for synthesizing a graphene oxide quantum dots-iron phthalocyanine (FePc-GOQDs) nanocomposite with enhanced electrochemical properties, particularly for oxygen reduction reactions (ORR). The process begins by dispersing 500 mg of graphene oxide (GO) in a hydrogen peroxide and deionized water solution in a 1:10 volume ratio, followed by hydrothermal treatment at 180° C. for 8 hours to produce GO quantum dots (GOQDs). The resulting material is freeze-dried to obtain GOQDs powder. Subsequently, 60 mg of GOQDs are combined with 10 mg of iron phthalocyanine (FePc) and 20 mL of dimethyl sulfoxide (DMSO), and the mixture is subjected to microwave irradiation at 500 W and 150° C. for 30 minutes. The resulting composite is rinsed repeatedly with deionized water and ethanol, then dried at 120° C. to yield the FePc-GOQDs nanocomposite. This composite demonstrates superior ORR performance due to strong Fe—O bonding and optimized electronic interactions.

The invention relates to the field of quantum dot materials, in particular to a bismuth-based lead-free perovskite quantum dot material and a preparation method and application thereof. The invention discloses a preparation method of a bismuth-based lead-free perovskite quantum dot material, which is characterized by comprising the following steps of: 1, weighing bismuth salt and salt containing halide ions, adding the bismuth salt and the salt containing halide ions into a good solvent, then adding ionic liquid, and uniformly stirring to obtain a precursor solution; 2, heating the precursor solution, rapidly injecting the precursor solution into an anti-solvent, and violently stirring for 5-15 minutes; and then cooling, precipitating, centrifuging, washing and dispersing in methylbenzene to obtain a quantum dot solution. The bismuth-based lead-free perovskite quantum dot material prepared by the invention has high quantum yield, good stability and excellent photoelectric properties, and can meet the application requirements of various photoelectric devices.

The invention provides quantum dot aerogel, a quantum dot light-emitting device and a preparation method thereof, and the preparation method comprises the following steps: adding a silane coupling agent into quantum dots to form modified quantum dots with silanol groups on the surfaces; uniformly stirring a silicon dioxide precursor and absolute ethyl alcohol, slowly adding deionized water and a catalyst, and stirring to form silicon dioxide sol; adding the modified quantum dots into silicon dioxide sol to form a mixed solution; placing the mixed solution in a closed container, and standing to form gel; putting the gel into absolute ethyl alcohol for aging treatment; and carrying out supercritical drying treatment on the aged gel to obtain the quantum dot aerogel composite material. The light-emitting performance of the quantum dots and the heat insulation performance of the aerogel are perfectly combined, the high temperature resistance and blue light resistance of the quantum dot aerogel composite material film layer can be greatly improved, the preparation method is simple, and the application range of the quantum dots can be greatly widened.