13020 results about "Quantum dot" patented technology

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal / mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap; a plurality of semiconductor shells formed respectively about the light emitting cores to form core / shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and a semiconductor matrix connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons.

Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input / pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input / pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.

The present invention provides systems, methods, and compositions for targeted delivery of nanoparticles and / or agents to tissues, cells, and / or subcellular locales. In general, compositions comprise a nanoparticle (e.g. quantum dot, polymeric particle, etc.), at least one modulating entity (such as a targeting moiety, transfection reagent, protective entity, etc.), and at least one agent to be delivered (e.g. therapeutic, prophylactic, and / or diagnostic agent). The present invention provides methods of making and using nanoparticle entities in accordance with the present invention.

A wide viewing angle liquid crystal display includes color filters having a quantum dot and scattering particles and liquid crystal layer disposed in a microcavity, a distance between the color filter and the liquid crystal layer being sized to minimize display deterioration due to parallax.

CIGS absorber layers fabricated using coated semiconducting nanoparticles and / or quantum dots are disclosed. Core nanoparticles and / or quantum dots containing one or more elements from group IB and / or IIIA and / or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and / or crystal phase, and / or size, and / or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Solid state lighting devices containing quantum dots dispersed in polymeric or silicone acrylates and deposited over a light source. Solid state lighting devices with different populations of quantum dots either dispersed in matrix materials or not are also provided. Also provided are solid state lighting devices with non-absorbing light scattering dielectric particles dispersed in a matrix material containing quantum dots and deposited over a light source. Methods of manufacturing solid state lighting devices containing quantum dots are also provided.

The present invention concerns methods and compositions for stably tethered structures of defined compositions with multiple functionalities and / or binding specificities. Particular embodiments concern stably tethered structures comprising a homodimer of a first monomer, comprising a dimerization and docking domain attached to a first precursor, and a second monomer comprising an anchoring domain attached to a second precursor. The first and second precursors may be virtually any molecule or structure, such as antibodies, antibody fragments, antibody analogs or mimetics, aptamers, binding peptides, fragments of binding proteins, known ligands for proteins or other molecules, enzymes, detectable labels or tags, therapeutic agents, toxins, pharmaceuticals, cytokines, interleukins, interferons, radioisotopes, proteins, peptides, peptide mimetics, polynucleotides, RNAi, oligosaccharides, natural or synthetic polymeric substances, nanoparticles, quantum dots, organic or inorganic compounds, etc. The disclosed methods and compositions provide a simple, easy to purify way to obtain any binary compound attached to any monomeric compound, or any trinary compound.

A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

A monolithic semiconductor photovoltaic solar cell comprising a plurality of subcells disposed in series on an electrically conductive substrate. At least one subcell of the plurality of subcells includes an epitaxially grown self-assembled quantum dot material. The subcells are electrically connected via tunnel junctions. Each of the subcells has an effective bandgap energy. The subcells are disposed in order of increasing effective bangap energy, with the subcell having the lowest effective bandgap energy being closest to the substrate. In certain cases, each subcell is designed to absorb a substantially same amount of solar photons.

Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.

The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

The invention provides “engineered” nonlinear nanocomposite materials with an extremely large χ(3) and fast temporal response along with optical properties that can be precisely tuned to satisfy the requirements of a particular application (e.g., optical, thermal, mechanical, etc.). In particular, the magnitude of the linear and nonlinear index of refraction can be adjusted substantially independently of the absorption spectrum of the material. In addition, the optical characteristics can be engineered substantially independently from the mechanical and chemical characteristics, providing exceptional performance and flexibility in terms of device-incorporation and process-stability.

A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.

A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the output light. The device can be used to produce broad-spectrum color light, such as white light.

There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part.

A photoluminescence color display comprises a display panel that displays red, green and blue pixel areas, an excitation source operable to generate excitation radiation for operating the display, and a photoluminescence color-element plate. The color-element plate comprises at least one photoluminescence material, such as a phosphor material or quantum dots, that is operable to emit light corresponding to red, green and blue pixel areas of the display in response to said excitation radiation. Additionally, the photo-luminescence color display comprises a wavelength selective filter that is provided between the color-element plate and the excitation source. The filter has a transmission characteristic that allows the passage of excitation radiation from the excitation source to excite the at least one photoluminescence material whilst preventing the passage of photoluminescence light back to the excitation source thereby prevent cross contamination of light among the different pixel areas of the display.

A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.

A device and method for providing illuminating light utilizes quantum dots to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the illuminating light. The quantum dots may be included in the light source, a light panel and / or an optional interface medium of the device.

Techniques are described for transmitting electromagnetic radiation from LED devices fabricated on bulk semipolar or nonpolar materials with use of phosphors to emit light in a reflection mode.

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

A white light LED is described that uses an LED die that emits visible blue light in a wavelength range of about 450-470 nm. A red phosphor or quantum dot material converts some of the blue light to a visible red light having a peak wavelength between about 605-625 nm with a full-width-half-maximum (FWHM) less than 80 nm. A green phosphor or quantum dot material converts some of the blue light to a green light having a FWHM greater than 40 nm, wherein the combination of the blue light, red light, and green light produces a white light providing a color rendering of Ra,8>90 and a color temperature of between 2500K-5000K. Preferably, the red and green converting material do not saturate with an LED die output of 100 W / cm2 and can reliably operate with an LED die junction temperature over 100 degrees C.

A device and method for providing illuminating light utilizes quantum dots to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the illuminating light. The quantum dots may be included in the light source, a light panel and / or an optional interface medium of the device.

An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal / mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm. The semiconductor nano-pillars are also preferably homoepitaxial or heteroepitaxial with the semiconductor layer.

The invention relates to the technical field of displaying, in particular to a quantum dot color filter, a manufacturing method thereof and a display device. The quantum dot color filter comprises a plurality of pixels, a substrate and a filter layer, wherein each pixel comprises a plurality of color sub-pixels in different colors; at least one color sub-pixel is formed by a quantum dot material; the color of light generated by exciting the quantum dot material is the same as that of a corresponding color sub-pixel; and the filter layer is used for absorbing light rays of the non-excited quantum dot material. The color filter is formed since quantum dots can present physical features of fluorescent light of different colors under the irradiation of a backlight source, so that the transmittance of the color filter is increased, the brightness and colors of pictures are improved and enriched greatly, the display quality of images is improved, the user experience is enhanced, and meanwhile, the production cost is reduced to the maximum extent.

An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.