70254 results about "Length wave" patented technology

A lighting device comprising first and second groups of solid state light emitters, which emit light having dominant wavelength in ranges of from 430 nm to 480 nm and from 600 nm to 630 nm, respectively, and a first group of lumiphors which emit light having dominant wavelength in the range of from 555 nm to 585 nm. If current is supplied to a power line, a combination of (1) light exiting the lighting device which was emitted by the first group of emitters, and (2) light exiting the lighting device which was emitted by the first group of lumiphors would, in an absence of any additional light, produce a sub-mixture of light having x, y color coordinates within an area on a 1931 CIE Chromaticity Diagram defined by points having coordinates (0.32, 0.40), (0.36, 0.48), (0.43, 0.45), (0.42, 0.42), (0.36, 0.38). Also provided is a method of lighting.

An imaging module in one embodiment includes at least one multiple color emitting light source comprising a plurality of different colored LED dies each independently driveable so that the overall color emitted by the light source can be controlled and varied. The multiple color emitting light source can be controlled so that the color emitted by the light source is optimized for imaging or reading in a present application environment of the module. Further, the module can be configured so that control of the multiple color emitting light source automatically varies depending on a sensed condition, such a color present in a field of view of the module, the distance of the module to a target, and / or a predetermined criteria being met so that feedback is provided to a user. The module in a further aspect can include illumination light sources and aiming light sources which project light in different wavelength emission bands.

An ultraviolet laser apparatus having a single-wavelength oscillating laser generating laser light between an infrared band and a visible band, an optical amplifier for amplifying the laser light, and a wavelength converting portion converting the amplified laser light into ultraviolet light using a non-linear optical crystal. An exposure apparatus transfers a pattern image of a mask onto a substrate and includes a light source having a laser apparatus emitting laser light having a single wavelength, a first fiber optical amplifier for amplifying the laser light, a light dividing device for dividing or branching the amplified laser light into plural lights, and second fiber optical amplifiers for amplifying the plural divided or branched lights, respectively, and a transmission optical system for transmitting the laser light emitted from the light source to the exposure apparatus.

A pulse oximetry sensor has an emitter adapted to transmit optical radiation of at least two wavelengths into a tissue site and a detector adapted to receive optical radiation from the emitter after tissue site absorption. A tape assembly is adapted to attach the emitter and detector to the tissue site. A flexible housing is disposed around and optically shields the detector.

A reflectance sensor which can be applied to a patient in a manner which reduces the light energy reaching the detector without first being attenuated by the tissue at the measurement site. Moreover, the reflectance sensor includes emitting devices adapted for use in legacy patient monitoring systems.

A luminous lamp having an ultraviolet filtering and explosion-proof thin film is disclosed. An outside of a lamp is coated by a transparent layer which comprises phosphor powder. Energy generated by the lamp is absorbed by the phosphor powder while the lamp is shining. The phosphor powder would release energy to shot brilliance, so as to provide auxiliary lighting after turning off the lamp. Additionally, the phosphor powder can absorb harmful ultraviolet and other harmful radiations with shorter wavelengths to be one part of the thin film for filtering harmful radiations. The harmful ultraviolet can be transformed by the phosphor powder into visible light to red shift radiations with short wavelengths; hence the harmful radiations with shorter wavelengths can be eliminated. The illumination of visible light can be further increased. The transparent layer can catch broken fragments of the outside of the lamp to decrease accidents when the lamp is broken.

A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

A protective and decorative coating composition including about 2 to 10 different colorants which in combination with a resinous composition produce a desired visible coating. A majority of the colorants has a maximum haze of about 10% and exhibits an absorbance peak in the visible spectrum wherein at least about 50% of the total absorbance in the visible spectrum occurs at wavelengths within about 50 nm of the wavelength of the peak absorbance.

The Laser Induced Fluorescence Attenuation Spectroscopy (LIFAS) method and apparatus preferably include a source adapted to emit radiation that is directed at a sample volume in a sample to produce return light from the sample, such return light including modulated return light resulting from modulation by the sample, a first sensor, displaced by a first distance from the sample volume for monitoring the return light and generating a first signal indicative of the intensity of return light, a second sensor, displaced by a second distance from the sample volume, for monitoring the return light and generating a second signal indicative of the intensity of return light, and a processor associated with the first sensor and the second sensor and adapted to process the first and second signals so as to determine the modulation of the sample. The methods and devices of the inventions are particularly well-suited for determining the wavelength-dependent attenuation of a sample and using the attenuation to restore the intrinsic laser induced fluorescence of the sample. In turn, the attenuation and intrinsic laser induced fluorescence can be used to determined a characteristic of interest, such as the ischemic or hypoxic condition of biological tissue.

A low loss transmission system which utilizes a single uninsulated central conducting line segment without any special surface treatment or special enclosing dielectric and having launch devices mounted at each end. The invention provides the use of conductors with circumference approaching and exceeding one wavelength at the propagating frequency. In combination, this invention enables the use of unconditioned and uninsulated conductors and in particular, existing overhead electric power lines which are available worldwide, for the economic and efficient transport of information.

An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 having a thickness of less than about 5000 angstroms, wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 with a thickness of less than about 5000 angstroms, comprising introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer, and directing light preferably with a wavelength of less than about 450 nm through the immersion fluid and onto the photoresist.

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

A pulse oximetry sensor comprises emitters configured to transmit light having a plurality of wavelengths into a fleshy medium. A detector is responsive to the emitted light after absorption by constituents of pulsatile blood flowing within the medium so as to generate intensity signals. A sensor head has a light absorbing surface adapted to be disposed proximate the medium. The emitters and the detector are disposed proximate the sensor head. A detector window is defined by the sensor head and configured so as to limit the field-of-view of the detector.

A device allows easy and unencumbered interaction between a person and a computer display system using the person's (or another object's) movement and position as input to the computer. In some configurations, the display can be projected around the user so that that the person's actions are displayed around them. The video camera and projector operate on different wavelengths so that they do not interfere with each other. Uses for such a device include, but are not limited to, interactive lighting effects for people at clubs or events, interactive advertising displays, etc. Computer-generated characters and virtual objects can be made to react to the movements of passers-by, generate interactive ambient lighting for social spaces such as restaurants, lobbies and parks, video game systems and create interactive information spaces and art installations. Patterned illumination and brightness and gradient processing can be used to improve the ability to detect an object against a background of video images.

A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.

A reflection-detector sensor position indicator comprises emitters that transmit light having a plurality of wavelengths. A detector outputs a sensor signal. At least one reflection detector outputs at least one sensor position signal. An attachment assembly attaches the emitters, the detector and the reflection detector onto a tissue site. A sensor-on condition indicates that the attachment assembly has positioned the emitters generally centered over a fingernail, the detector on a fingertip opposite the fingernail and the reflection detector over the fingernail. The sensor signal, in the sensor-on condition, is at least substantially responsive to the emitter transmitted light after attenuation by pulsatile blood flow perfused within a fingernail bed underneath the fingernail. The sensor position signal, in the sensor-on condition, is at least substantially responsive to the emitter transmitted light after reflection off of the fingernail.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal / mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

A method and apparatus are provided for performing a therapeutic treatment on a patient's skin by concentrating applied radiation of at least one selected wavelength at a plurality of selected, three-dimensionally located, treatment portions, which treatment portions are within non-treatment portions. The ratio of treatment portions to the total volume may vary from 0.1% to 90%, but is preferably less than 50%. Various techniques, including wavelength, may be utilized to control the depth to which radiation is concentrated and suitable optical systems may be provided to concentrate applied radiation in parallel or in series for selected combinations of one or more treatment portions.

A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and / or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°. At least one of the two edges has a transparent portion. the devices according to the present invention can be arranged in arrays.

A device allows easy and unencumbered interaction between a person and a computer display system using the person's (or another object's) movement and position as input to the computer. In some configurations, the display can be projected around the user so that that the person's actions are displayed around them. The video camera and projector operate on different wavelengths so that they do not interfere with each other. Uses for such a device include, but are not limited to, interactive lighting effects for people at clubs or events, interactive advertising displays, etc. Computer-generated characters and virtual objects can be made to react to the movements of passers-by, generate interactive ambient lighting for social spaces such as restaurants, lobbies and parks, video game systems and create interactive information spaces and art installations. Patterned illumination and brightness and gradient processing can be used to improve the ability to detect an object against a background of video images.