1088 results about "Noble gas" patented technology

A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.

A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

A method of atomic layer etching (ALE) uses a cycle including: continuously providing a noble gas; providing a pulse of an etchant gas to the reaction space to chemisorb the etchant gas in an unexcited state in a self-limiting manner on a surface of a substrate in the reaction space; and providing a pulse of a reactive species of a noble gas in the reaction space to contact the etchant gas-chemisorbed surface of the substrate with the reactive species so that the layer on the substrate is etched. The etchant gas is a fluorocarbon gas containing a functional group with a polarity.

The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

A method of imaging using magnetic resonance includes administering hyperpolarized noble gas to a subject in a region to be imaged, applying a magnetic field of a magnitude between about 0.0001 Tesla and about 0.1 Tesla to the subject at least in the region of the subject to be imaged, detecting a spatial distribution of magnetic resonance signals of the hyperpolarized noble gas in the subject, and producing a representation of the spatial distribution.

An electrosurgical device to generate a plasma stream for performing electrosurgery on a surgical site on a patient comprising an electrosurgical generator coupled to a electrical power source to supply power to the electrosurgical device and a plasma generator including an electrode operatively coupled to the electrosurgical generator to receive electrical energy therefrom and concentrically disposed within an inner noble gas conduit to form a plasma channel coupled to a noble gas source to feed noble gas to the inner noble gas conduct, an intermediate electronegative gas conduit disposed in surrounding coaxial relation relative to the noble gas conduit to cooperatively form an electronegative gas channel therebetween coupled to a gas source to feed electronegative gas to the electronegative gas channel and an outer aspiration conduit disposed in surrounding coaxial relation relative to the intermediate electronegative gas conduit to cooperatively form an aspiration channel therebetween coupled to a negative pressure source such that the electrode heats the noble gas to at least partially ionize the noble gas to generate the plasma stream to be directed to the surgical site to perform the surgical procedure while the electronegative gas maintains or sustains the plasma stream and the negative pressure source removes fluid and solid debris from the surgical site.

An automotive discharge bulb having a light emitting tube includes a ceramic tube with paired electrodes oppositely placed, and contains a light emitting material and starting rare gas. A transversal section of the ceramic tube is longitudinally elongated. Because the capacity of an enclosed space of the ceramic tube is small, after discharging begins, the enclosed space temperature increases. Consequently, the ceramic tube has a good luminous flux rising characteristic. Because of the small surface area of the ceramic tube, the load imposed on the wall surface increases. Consequently, the ceramic tube has good luminous efficiency. In the ceramic tube having a longitudinally elongated transversal section, an arc generated into an upwardly convex shape and the tube wall do not make contact. Thermal shock resistance required of the ceramic tube is alleviated, durability is enhanced, and the ceramic tube is made of a ceramic material hitherto unusable.

Disclosed is a process for exfoliating a layered material to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm, and often between 0.34 nm and 1.02 nm. The process comprises: (a) charging a layered material to an intercalation chamber comprising a gaseous environment at a first temperature and a first pressure sufficient to cause gas species to penetrate into the interstitial space between layers of the layered material, forming a gas-intercalated layered material; and (b) operating a discharge valve to rapidly eject the gas-intercalated layered material through a nozzle into an exfoliation zone at a second pressure and a second temperature, allowing gas species residing in the interstitial space to exfoliate the layered material to produce the platelets. The gaseous environment preferably contains only environmentally benign gases that are reactive (e.g., oxygen) or non-reactive (e.g., noble gases) with the layered material. The process can additionally include dispersing the platelets in a matrix material to form a nanocomposite. The process also can include an additional process of re-compressing the nana-scaled platelets into a product such as a flexible graphite sheet.

After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.