30 results about "Noble gas" patented technology

An apparatus for extracting and utilizing noble gases from carbonate rock includes a container body. A gas-solid separation assembly defines filter pores, and a diameter of each filter pore is micrometer-scale. A mechanical crushing assembly is disposed at a bottom of the gas-solid separation assembly, and is configured to crush a carbonate-rock sample until particles each have a size on the order of micrometers or larger. The gas-solid separation assembly is elastic. The particle deposition device is disposed inside a crushing chamber. The particle deposition device includes connecting ropes and spheres. The connecting ropes are fixed to an inner wall of the crushing chamber, and the spheres are fixed to the connecting ropes. This apparatus not only avoids the generation of large quantities of impurity components, but also separates solid carbonate-rock sample particles from the noble gases, enabling effective extraction of the noble gases from the carbonate-rock sample for utilization.

A processing apparatus comprises a processing chamber, a gas supply source, a first excitation light source and a second excitation light source. The gas supply source is configured to supply noble gas and a processing gas into the processing chamber. The first excitation light source is configured to irradiate the processing chamber with first excitation light to excite the noble gas to a first excited state. The second excitation light source is configured to irradiate the processing chamber with second excitation light to excite the noble gas in the first excited state to a second excited state.

busbar (100), wherein the busbar (100) forms a receptacle (102) for a cooling cell (104) and the cooling cell (104) is arranged in the receptacle (102), wherein the receptacle (102) is configured to thermally couple the cooling cell (104) to the busbar (100), wherein a heat storage medium (300) is arranged in an interior space (208) of the cooling cell (104) and the cooling cell (104) is configured to passively temperature control the busbar (100), wherein the heat storage medium (300) incompletely fills the interior space (208), wherein a remaining volume of the interior space (208) is filled with a noble gas (304).

A passivation process for a lithium metal anode includes subjecting lithium metal to a passivation gas having the following composition: two or more gases selected from the group consisting of CO2, O2, H2O, N2, HC, CO, H, He, F, and SiH4; and optionally, a noble gas. The passivation gas reacts with the lithium metal to form a passivation layer on the lithium metal that is less than ten microns in depth.

The invention relates to a hydrogen storage power plant (1) comprising:in order to produce hydrogen (H2) from methane or natural gas, a pyrolysis device for methane pyrolysis and / or natural gas pyrolysis and / or a plasmalysis device (6) for methane plasmalysis and / or natural gas plasmalysis; -a storage device (11), which is coupled on the output side to the pyrolysis device, for storing the hydrogen (H2) or a storage device (11), which is coupled on the output side to the plasmalysis device (6), for storing the hydrogen (H2); anda hydrogen combustion engine (12) which is coupled on the outlet side to the storage device (11) and has a closed noble gas circuit (12.1) for circulating noble gas, which noble gas circuit leads from an outlet channel (12.2) of the hydrogen combustion engine (12) via a circulation path to an inlet channel (12.3) of the hydrogen combustion engine (12) and guides a noble gas (EG) from the outlet channel (12.2) via the inlet channel (12.3) into a combustion chamber of the hydrogen combustion engine (12). The invention also relates to a method for operating such a hydrogen storage power plant (1).

Embodiments of the present disclosure generally relate to methods of plasma curing a dielectric material layer formed on a substrate. More specifically, the methods disclosed herein utilize a xenon (Xe) containing gas to generate a plasma that allows for greater dielectric compositional modulation. In some embodiments, a method of curing a substrate includes depositing a dielectric film onto a substrate to form a dielectric layer on a surface of a substrate, and performing a plasma cure operation on the formed dielectric layer. The plasma cure operation includes generating a plasma over a surface of the formed dielectric layer by delivering a RF power to a plasma process gas. The plasma process gas include Xe and H2.

As one way of preparing for global cooling, we will provide a nuclear reactor that requires less investment capital, is based on the premise that population density will decrease due to population decline, and it is unknown when, where, and what scale an earthquake will occur, and of course does not require a final disposal site, and can convince the media and local residents by reducing the amount of spent nuclear fuel from light water reactors. [Solution] A nuclear reactor in which a large number of allowable alloy-containing nuclear fuel rod assemblies 1, each consisting of a large number of allowable alloy-containing nuclear fuel rods made of heavy noble gas coolant and allowable enrichment plutonium alloy, are arranged in a square lattice pattern in the core of an existing BWR.

The invention discloses a helium detection and orientation sensor based on a two-dimensional acoustic topological material, and belongs to the rare gas sensing technology, the sensor adopts a Kagome structure, topological angular states are generated on three angles, and the helium concentration is detected by using the relationship between the frequency of the angular states and the acoustic characteristics of a gas medium in the sensor. The sensor can be used over a very wide temperature and humidity range, and does not require calibration. The sensor is in a regular triangle shape, and the direction of a leakage point is determined by adopting three response states with different angular states. The gas sensor shows good stability, repeatability and quick response in helium detection, and can be used for detection of various inert gases.

The application relates to a kind of optically pumped metastable noble gas lasers using laser-induced preionization, wherein a sample cell is arranged inside a noble gas metastable preparation chamber, a radio frequency electrode and a grounded electrode are arranged inside the noble gas metastable preparation chamber, the sample cell is arranged between the radio frequency electrode and the grounded electrode, a pump light source and a preionization light source are arranged outside the noble gas metastable preparation chamber, and the pump light source and the preionization light source are arranged to emit light perpendicularly and orthogonally to the sample cell, a first mirror is arranged between the pump light source and the noble gas metastable preparation chamber, a second mirror is arranged on the side of the noble gas metastable preparation chamber away from the pump light source, a lens is arranged between the preionization light source and the noble gas metastable preparation chamber, and a heating device is arranged outside the noble gas metastable preparation chamber. The application can quickly generate high-concentration metastable atoms based on laser-induced preionization and electron collision accelerated by an external electric field, and can directly avoid the problem of serious electromagnetic interference caused by the generation of metastable atoms in the traditional discharge mode at the mechanism level.

A method of monitoring carbon dioxide (CO2) mineralisation and / or dissolution in a storage reservoir comprises: injecting a feed of carbon dioxide into the storage reservoir, wherein the feed has a first ratio of 13C / 12C, a first ratio of CO2 to a noble gas, and a first ratio of 18O / 16O; producing a fluid downstream of the storage reservoir, wherein the produced fluid has a second ratio of 13C / 12C, a second ratio of CO2 / noble gas, and a second ratio of 18O / 16O; and measuring the second ratio of 13C / 12C of the produced fluid and measuring the second ratio of CO2 to noble gas and / or measuring the second ratio of 18O / 16O of the produced fluid.

The application discloses a space helium recycling control system, method and equipment, relates to the technical field of space rare gas recycling system control, and comprises four detection devices, four adjusting devices and a control device. Based on the actual concentration of a first purified target impurity in the space helium output by a recovery device, the actual concentration of a second purified target impurity in the space helium output by an adsorption device, the actual concentration of a third purified target impurity in the space helium output by a low-temperature device, the actual temperature of the space helium output by the low-temperature device, the actual concentration of a fourth purified target impurity in the space helium output by a dehydrogenation device and the actual pressure of the space helium output by the dehydrogenation device, the flow, temperature and pressure of the space helium are adjusted, and the space helium recycling system is controlled. The application can well control the space helium recycling system and further reduce resource waste.

The invention belongs to the technical field of insulating gases, and particularly relates to an environment-friendly mixed gas added with trifluoromethylsulfonyl fluoride and application of the environment-friendly mixed gas in an insulated power transmission pipeline. The environment-friendly mixed gas in the invention is composed of trifluoromethylsulfonyl fluoride (CF3SO2F) and a carrier gas, wherein the carrier gas is N2, CO2 or rare gas. The mixed gas has the advantages of low GWP, low toxicity, low boiling point and high insulating strength, can be applied to gas-insulated power transmission pipelines, not only can reduce the emission of greenhouse gases, but also can meet the insulating requirement in an environment at a low temperature of-25 DEG C or above, and has comprehensive indexes superior to those of most of current sulfur hexafluoride substitute gases.

Even at low temperatures, a carbon-based film is selectively and perpendicularly deposited on the top of the pattern. [Solution] When a substrate having a pattern is placed inside a processing chamber, a film-forming gas is supplied inside the processing chamber, and plasma is generated from the film-forming gas by high-frequency power to perform a film-forming process on the substrate, the film-forming gas contains multiple types of hydrocarbon gases and noble gases, and when multiple types of hydrocarbon gases are excited and turned into plasma, the composition of the active species generated from each hydrocarbon gas is different.

The invention relates to a method for transferring a thin layer that comprises carrying out a first step of localised ion implantation of hydrogen, helium, a noble gas, or a mixture of same in a donor substrate in order to create a weakened region; carrying out a second step of ion implantation of hydrogen and / or helium in the donor substrate in order to create a weakened plane delimiting the thin layer; bonding the donor and acceptor substrates by means of molecular adhesion; detaching the thin layer, which comprises a second heat treatment step. A first heat treatment step is carried out on the donor substrate between the first and second ion implantation steps in order to grow microcracks so as to weaken the weakened region. The conditions of the first ion implantation step and of the first heat treatment step are such that the donor substrate is free of bubbles during bonding and such that the weakened region is a fracture initiator.

The invention relates to a method for preparing a single-domain thin film (4) of piezoelectric material, comprising finishing a first layer (8) transferred onto a substrate (2). The finishing process includes heat treatment of the free face (9) of the first layer, followed by its thinning to form the single-domain thin film (4). According to the invention, the thinning of the first layer (8) comprises reactive ion etching using a plasma prepared by a mixture of a noble gas and a chlorinated gas. Figure 2

A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure containing a mixture 103 of a first noble gas and a second noble gas. The light source may include a laser pump source 106 for generating an optical pump 108 to sustain a plasma 112 within the gas containment structure. The first noble gas absorbs broadband light 113a within a first wavelength band and a second wavelength band. The light source may include a filter 104 located within the gas containment structure and configured to absorb broadband light 113b emitted by the plasma having wavelengths below a selected wavelength threshold. Absorption of the broadband light 113b by the first noble gas and the filter 104 provides long-pass filtering of the broadband light below the selected wavelength to protect one or more downstream optical elements from damage.

A process for selectively adsorbing a noble gas in a porous formate includes: providing a porous formate having a plurality of cavities interconnected by apertures defined by formate ligands with dynamic vibrational movement, the formate having a pore limiting diameter; providing a gas stream comprising a noble gas and a contaminant gas; contacting the porous formate with the gas stream at a selected temperature greater than the formate's kinetic inflection temperature for the noble gas and less than the formate's kinetic inflection temperature for the contaminant gas, and at a selected pressure such that the noble gas adsorbs into cavities of the formate to form a composite matter in an absence of adsorbing an appreciable amount of the contaminant gas into the formate; and recovering the composite matter.

In a first aspect, the present invention relates to a method for removing a radioactive noble gas from a gas volume, the method comprising: (a) providing the gas volume such that the dew point of the gas volume at a gas temperature of 20° C. is −20° C. or less, preferably −30° C. or less, more preferably −45° C. or less; and (b) passing the gas volume over a bed (33) of microporous molecular sieve comprising a transition metal disposed on and / or within the microporous molecular sieve, thereby adsorbing the radioactive noble gas onto the bed (33).

The invention relates to a thin-film transfer method comprising a first localized ion implantation of hydrogen, helium, a noble gas, or a mixture thereof in a donor substrate to create a weakened zone; a second ion implantation of hydrogen and / or helium in the donor substrate to create a weakened plane delimiting the thin film; molecular adhesion of the donor and recipient substrates; and detachment of the thin film, including a second heat treatment. A first heat treatment of the donor substrate is performed between the first and second ion implantations to grow microcracks so as to weaken the weakened zone. Conditions for the first ion implantation and the first heat treatment are such that the donor substrate is free of bubbles during bonding and such that the weakened zone is a fracture initiator.Figure for the abbreviation: Figure 1D.

A radioactive noble gas removal filter, a filter unit, and a nuclear reactor containment vessel vent system with improved durability are provided. The radioactive noble gas removal filter according to the present invention includes a polyimide film including a structural unit represented by general formula (1).

A method of etching silicon at a low temperature is provided. The method includes forming an inert layer from condensation of a noble gas on exposed surfaces, such as a plurality of sidewalls of a feature, at a low temperature to passivate the sidewalls prior to an etch process. The method further includes flowing a fluorine-containing precursor gas into a chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on a plurality of exposed portions of a substrate and exposing the substrate to ions to etch the substrate.

Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Metal borohydride, Me(BH4)n, is produced from metal boron oxide, Me(BO2)n, in which Me is a metal or a molecule that shows metal-like behaviour and can act as a metal, and n is an integer that can be associated with the valence of the metal, wherein in a first fluidized bed step the metal boron oxide is provided in a first fluidized bed. The first fluidized bed is fluidized using a gas selected from at least one of nitrogen, N2, gas and a noble gas, under such circumstances, especially pressure and temperature, that oxygen atoms are removed from the metal boron oxide to provide metal boron, MeBn, particles, possibly ions. In a subsequent second fluidized bed step the metal boron particles are provided in a second fluidized bed that is fluidized using hydrogen, H2, gas under such circumstances that hydrogen chemically reacts with the metal boron particles to provide metal borohydride.

The present invention relates to a coated cutting tool (1) for metal machining, comprising a cemented carbide base body (5) and a coating (6) including a layer of metal nitride, wherein the uppermost part of the cemented carbide base body (5) has WC grains including the uppermost WC interface with the coating (6), and a binder phase including the uppermost binder phase interface with the coating (6), and the WC grains including the uppermost WC interface with the coating (6) have an uppermost zone adjacent to the coating (6) which includes W and C, as well as N and one or more of Ti, Cr, Zr, Nb, Mo, and V, the uppermost zone being 1.5 to 8 nm, and the uppermost zone of the WC grains adjacent to the coating (6) which includes any noble gas element or combination of noble gas elements in an amount of ≤0.6 at%.

The invention relates to collection and recycling of rare gases in semiconductor processing equipment. A processing chamber, for example for a semiconductor processing apparatus, is connected to a recovery unit. The recovery unit includes a first storage tank for buffer gas and a second storage tank for rare gas. And the two storage grooves are connected with the column body in the recovery unit. The recovery unit and process chamber may operate as a closed system. The rare gas may be conveyed at a variable flow rate, while the separation in the recovery unit operates at a constant flow condition.

A purification system for nitrogen gas and xenon gas in water and a static isotopic analysis method thereof are provided. The system includes a sample container, a carbon dioxide ice cold trap, a gas delivery main pipe and a mass spectrometer for noble gas communicated sequentially. The gas delivery main pipe is provided with branch pipelines communicated with a cryo pump and a vacuum pump set respectively, the mass spectrometer for noble gas is communicated with the vacuum pump set, and the cryo pump adsorbs or releases nitrogen gas and / or xenon gas by setting different temperatures of the cryo pump. Inlet and outlet sides of the carbon dioxide ice cold trap are respectively provided with a first valve and a second valve. Fourth and fifth valves are respectively disposed between the gas delivery main pipe and the vacuum pump set, and between the gas delivery main pipe and the cryo pump.

The application provides a bimodal inert gas radionuclide measurement system and method, and particularly relates to the technical field of nuclear radiation detection. The measurement system comprises a coincidence probe, a power supply unit, a data acquisition unit and an upper computer. The coincidence probe comprises a PIPS gas detection chamber and a cadmium zinc telluride detector array. The cadmium zinc telluride detector array is arranged on the outer side of the PIPS gas detection chamber, and the detection surface thereof is opposite to the gas sample in the PIPS gas detection chamber. The power supply unit is used for supplying power to the PIPS gas detection chamber and / or the cadmium zinc telluride detector array. The data acquisition unit is used for acquiring and processing the detector signal. The upper computer is used for analyzing the data processed by the data acquisition unit, and controlling the operation of the coincidence probe and the data acquisition unit. The measurement system of the application can be switched between the xenon monitoring mode and the krypton monitoring mode, greatly reducing the comprehensive construction cost, land space and operation and maintenance complexity of the monitoring system, and improving the equipment utilization.

A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

This invention discloses a high-efficiency waveguide for inert gas plasma based on an electromagnetic black hole, relating to microwave plasma technology and metamaterial applications. This invention solves the adaptation problem by controlling the volume ratio of the high-dielectric-content doped layer, making the dielectric constant of the core region equivalent to a positive value, breaking through the traditional limitation that the dielectric constant of the core layer of an electromagnetic black hole must be positive, thus achieving high-efficiency adaptation to argon plasma. This invention improves energy utilization efficiency and stability by achieving low-reflection absorption and helical convergence of electromagnetic waves through an electromagnetic black hole structure composed of an outer and inner layer. Combined with a structure consisting of rectangular and circular waveguides, microwave energy is concentrated in the plasma region, reducing transmission loss and adapting to dynamic changes in the plasma dielectric constant. This invention optimizes the structure and process by simulating a continuous refractive index distribution through a multi-layered fixed-dielectric-constant structure composed of an outer and inner layer of the electromagnetic black hole.