532 results about "Deposition rate" patented technology

The invention provides a control method of composite copper foil thickness control equipment, which comprises the following steps: calculating the deposition thickness of each abnormal concentration group at a future moment according to a deposition rate change rule diagram to obtain the copper layer thickness distribution of an abnormal region, and comparing the copper layer thickness distribution of the abnormal region with the thickness distribution of a normal region to obtain the thickness distribution of the abnormal region. Calculating a thickness deviation value of the abnormal area; according to the thickness deviation value, a deviation compensation algorithm is adopted, electroplating process parameters of the abnormal area are adjusted according to the size and the sign of the deviation value, and the electroplating process parameters comprise the current density and the electrolyte flow speed; and according to the optimized electroplating process parameters, performing parameter setting and adjustment on a power supply system and an electrolyte circulation system of the composite copper foil thickness control equipment, so that the composite copper foil thickness control equipment performs production according to the optimized electroplating process parameters.

The invention relates to an intelligent vacuum coating quality monitoring method based on artificial intelligence, which comprises the following steps: collecting process parameters in real time through a coating equipment sensor, dynamically monitoring vacuum degree change, deposition rate deviation and temperature gradient, and standardizing data flow to obtain a quantitative trend curve of process parameter fluctuation; combining the defect microcosmic feature description set with gas flow fluctuation and power supply voltage jitter to obtain a correlation analysis result of process parameters and defect forms, and calibrating defect types according to a defect feature library to obtain an updated defect classification basis; and inputting real-time new surface image data through the updated defect classification basis, performing defect detection for illumination reflection differences and stripe deflection angles, obtaining a preliminary defect classification result, and adjusting classification weight parameters.

The invention provides a lead-free high-phosphorus chemical nickel plating solution, and relates to the technical field of chemical nickel plating, and the lead-free high-phosphorus chemical nickel plating solution comprises the following components: 4-10 g / L of nickel salt, 6-12 g / L of a complexing agent, 0.1-0.8 g / L of a brightener, 8-12 g / L of a reducing agent, 0.4-0.8 g / L of a stabilizer, 1-5 g / L of a plating starting agent, 0.1-0.6 g / L of an anti-cracking agent, 0.5-1.5 g / L of an accelerator and 0.1-0.5 g / L of a wetting agent. The excellent chemical nickel-plating process of the circuit board and the carrier plate can be realized, and the chemical nickel-plating solution has the characteristics of high deposition rate, excellent stability, brightness, smoothness, no skip plating or diffusion plating, excellent binding force and the like.

The invention discloses a deposition system for chemical vapor deposition silicon carbide ring production, and relates to the field of high-end equipment manufacturing. The deposition system for producing the chemical vapor deposition silicon carbide ring comprises a furnace body, wherein a reaction chamber and a heating module are arranged in the furnace body; the plurality of spray head groups are connected with gas pipelines; the graphite support is installed at the inner bottom of the bottom cover, the graphite support is used for supporting the annular single crystal substrate, and the graphite support is detachable; the stabilizing mechanism comprises a lifting seat, the supporting arm is fixed to the lifting seat, and the clamping assembly is installed on the supporting arm; the device comprises a furnace body, a nozzle group, a conveying mechanism and a lifting mechanism, and is characterized in that gas containing silicon and carbon is sprayed into the furnace body through the nozzle group, so that the gas containing silicon and carbon can be quickly and uniformly dispersed into a reaction chamber in the furnace body, and the deposition rate and uniformity of silicon carbide on an annular single crystal substrate are ensured; the detachable graphite support is formed by combining a plurality of splicing columns, horizontal supporting rods and clamping needles, and the influence of the graphite support on airflow is reduced by adjusting the number of the splicing columns.

The invention belongs to the technical field of nuclear power, and particularly relates to a multi-scale coupling determination method and device for the deposition process of dirt on the surface of a fuel rod in a pressurized water reactor. According to the method, a multi-scale coupling solution scheme is adopted, fluid turbulence energy and temperature distribution obtained through macro-scale solution are used for solving a sedimentary layer internal temperature and pressure control equation on the micro-mesoscale, and the deposition rate is obtained; the required material input parameters are less and can be adjusted in real time along with the operation state of the pressurized water reactor; besides, parameters such as surface temperature, pressure and the like of the sedimentary layer obtained by micro-mesoscale solution can be used as boundary conditions to solve a macroscopic flow equation, so that a bidirectional coupling effect is realized, the application range of the method is expanded, and the calculation accuracy is improved. The parameter setting of the method disclosed by the invention can adopt a physical property change function of the material along with the change of temperature, pressure and the like, so that the universality and practicability of a program are improved.

The invention relates to the technical field of industrial control, in particular to a reduction furnace production process control method, device and equipment and a storage medium. According to the method, a self-adaptive controller is constructed through a reduction furnace system, and according to a preset updating strategy, each composition network of the self-adaptive controller is updated until each composition network meets a preset convergence condition, so that a target control strategy of the reduction furnace system is obtained through the updated self-adaptive controller; and controlling the cost function value of the reduction furnace system to reach a target value. Thus, the control input of the reduction furnace is adjusted through the target control strategy, stable control over the production parameters such as the surface temperature of the silicon rod and the silicon deposition rate is achieved, and the production efficiency and safety of polycrystalline silicon are improved.

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The invention relates to a method and device for determining the deposition rate of corrosion products in a reactor coolant. The method comprises the following steps: acquiring the particulate matter concentration of a structural material corrosion product in a liquid metal coolant; determining the deposition rate of the particulate matters in the corrosion product according to the particulate matter concentration and the stopping distance of the corrosion product; the stop distance is used to characterize the distance at which the corrosion product particles move to deposit with the coolant. By the adoption of the method, the stopping distance of the corrosion product can be considered when the deposition rate of the particulate matter is determined, and compared with a deposition rate determining mode that the corrosion product is assumed to be completely deposited at the release position of the structural material and the deposition lag condition is ignored in the related technology, the deposition rate can be determined more accurately. In addition, the deposition rate of the corrosion product particulate matter in the liquid metal coolant is determined in a one-dimensional solution mode, the deposition rate of the particulate matter in the corrosion product can be determined more efficiently, and the method is more suitable for engineering practical application.

The embodiment of the invention provides a deposition rate control method and device, a storage medium and a program product. Belongs to the technical field of semiconductor devices. The method comprises the following steps: periodically acquiring a deposition rate, wherein the deposition rate corresponds to a data acquisition moment; determining a deposition rate change rate corresponding to the data acquisition moment according to the deposition rate corresponding to the data acquisition moment; according to the deposition rate corresponding to the data acquisition moment and the deposition rate change rate, whether a power threshold value is increased or not is judged; if it is judged that the power threshold value is increased, the power output minimum value and the power output maximum value are increased; and carrying out light-emitting layer deposition by adopting output power which is greater than the power output minimum value and less than the power output maximum value. According to the method, the problems that the deposition rate is unstable and defects are increased due to the fact that the adjustment range of the power is large when the power output is dynamically adjusted are solved.

The invention discloses a radiation-resistant high-entropy alloy magnetron sputtering coating and a preparation method thereof, and belongs to the technical field of radiation-resistant coating materials. On the basis of the multi-element synergistic effect and lamination interface design of the high-entropy alloy, FeCrNi and FeNiCrMn are used as target materials, and the coating with the nanometer lamination structure is prepared by accurately regulating and controlling the target current, the gas flow, the deposition time and other process parameters of magnetron sputtering; meanwhile, accurate control over the single-layer film thickness and the interface density is achieved by adjusting the coupling relation between the sputtering power and the deposition rate, and it is ensured that all unit layers are flat and compact, and interface combination is complete. And a multi-heterogeneous interface is formed through the design of a laminated interface, so that a defect capture network is formed, the hardness of a single-layer coating is improved, the hardening rate after irradiation can be lower than that of a traditional single-layer coating, and the problems of crystallization and brittleness failure induced by irradiation are effectively relieved.

The invention provides a lubricating oil production multi-source data fusion analysis method which comprises the following steps: acquiring a stirrer rotating speed signal, acquiring pressure distribution data of a corresponding pipeline, and if the stirrer rotating speed fluctuation range exceeds a preset threshold range, marking that the stirring rotating speed is abnormal; analyzing the pressure distribution change of the pipeline when the stirring rotating speed is abnormal, combining the monitored viscosity change of the oil fluid and the difference of the oil circulating flow speed, and performing fusion calculation to obtain a shear stress distribution index in the pipeline; if the shear stress distribution index is abnormal, the suspension state of oil particles and the deposition rate of pollution particles are detected, and if the suspension state and the deposition rate exceed corresponding preset threshold values, the oil pollution diffusion degree is determined through the suspension state and the deposition rate; and identifying abnormal equipment according to the abnormal signal time sequence correlation, acquiring operation parameters of the abnormal equipment, synchronously analyzing to obtain equipment operation state coupling, analyzing equipment fault chain reaction characteristics, and generating an equipment chain abnormality distribution diagram according to the chain reaction characteristics.

The invention relates to a jet flow electrochemical deposition rate self-adaptive control method and system, and belongs to the technical field, and the method comprises the steps: carrying out the physical field model construction of collected data through a digital twinning technology, and constructing a jet flow electrochemical deposition rate self-adaptive control model based on deep learning and a physical model; therefore, optimized working parameters of the chemical additive manufacturing equipment are generated through the jet flow electrochemical deposition rate self-adaptive control model, a visualization system is constructed based on the collected data, and finally interaction control is conducted on the chemical additive manufacturing equipment through the visualization system. According to the method, a high-fidelity virtual model which synchronously runs with physical equipment is created, and before a complex spiral structure is printed, full-process simulation can be performed in a digital twinning body, which corners possibly have defects due to rate mismatch can be found in advance, and optimized manufacturing production parameters are generated; therefore, dynamic fine adjustment is carried out according to real-time current and image data, and closed-loop control is realized.

The embodiment of the invention relates to the technical field of reactor accident analysis, in particular to a method for determining the deposition rate of an aerosol system, which comprises the following steps: S1, determining gas space parameters of the aerosol system under a predetermined working condition, gas parameters under the predetermined working condition and physical property parameters of various types of aerosols in the aerosol system; s2, determining a deposition mode of the aerosol system under a predetermined working condition; s3, determining deposition velocities of all aerosols in the aerosol system according to the deposition mode determined in the step S2, the gas parameters under the predetermined working condition determined in the step S1 and the physical property parameters of various aerosols in the aerosol system; and S4, determining the deposition rate of the aerosol system according to the deposition rate determined in the step S3 and the gas space parameters determined in the step S1. According to the method provided by the embodiment of the invention, the deposition behavior of an aerosol system composed of two aerosols with different components can be researched, so that the defects of the current aerosol behavior research and analysis model are overcome.

The invention discloses a molecular dynamics simulation method, device and equipment oriented to a molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a transition state path, and constructing an initialized data set; training an initial neural evolution potential function based on the initialized data set, performing a small-scale extrapolation experiment, establishing an evaluation function, screening a differentiation configuration, and executing DFT precision verification to form an enhanced training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after feature fusion and cross validation, deduction is carried out, the deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.

The present invention belongs to the technical field of ceramic preparation, and relates to a preparation method and device for a high-purity porous boron carbide nuclear control rod. The present invention uses boron trichloride gas as the boron source, methane as the carbon source, argon as the carrier gas and protective gas, and hydrogen as the catalytic gas and reducing gas to prepare a high-purity porous boron carbide nuclear control rod. The method of increasing the deposition temperature of boron carbide step by step and region by region from the back to the front is adopted, which can not only improve the deposition rate of boron carbide, but also ensure that the physical and mechanical properties of each part of the prepared high-purity porous boron carbide nuclear control rod are consistent. By changing the particle size of the boron carbide powder for preparing the boron carbide blank and coordinating the adjustment of temperature, flow rate, pressure and deposition time, the porosity and pore size of the prepared high-purity porous boron carbide can be regulated and a high total boron and carbon content can be obtained, so as to meet various actual requirements.

The invention discloses a hydrophobic diamond-like carbon coating and a preparation method thereof. The hydrophobic diamond-like carbon coating comprises a transition layer and an F-DLC layer. The preparation method comprises the following steps: S1, cleaning the substrate; s2, the coating chamber is vacuumized and heated, and the coating chamber and the base body are baked; s3, carrying out ion etching cleaning on the surface of the substrate; s4, after etching is completed, a Cr layer or a Ti layer is deposited on the surface of the base body in a magnetron sputtering mode to serve as a transition layer; and S5, inert gas and carbon tetrafluoride are introduced, the graphite target is started, and the F-DLC layer is deposited in an arc ion plating mode. Wherein in the step S5, the ratio of the introduced inert gas to the carbon tetrafluoride is 1: 0.3-1: 4, the cavity pressure of the coating cavity is 0.1-5.0 Pa, the bias voltage of the substrate is 20-800 V, and the target current of the graphite target is 20-400 A. The hydrophobic diamond-like coating is prepared in an electric arc ion plating mode, the characteristics that the target material particle energy is improved, the deposition rate is high, and the film layer compactness is good are achieved, and the prepared coating is better in hydrophobic angle and excellent in anti-sticking performance.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source cavity oxidation film stability improving method which comprises the steps that high-temperature steam hole sealing treatment is conducted on an aluminum material subjected to surface pretreatment; cutting to remove the diaspore layer on the surface; and performing mixed gas passivation on the dissociation cavity and circulating for preset times, wherein the mixed gas passivation comprises pre-passivation, hydration passivation and synergistic passivation. Firstly, high-temperature steam hole sealing is carried out on an oxide layer, then a surface diaspore layer is cut, the number of surface active sites is increased, and OH bond adsorption is facilitated; then pre-passivation, hydration passivation and synergistic passivation are carried out, and circulation is carried out for preset times, so that the stability of OH bonds is ensured, and the service life of the RPS cavity is prolonged; a random forest algorithm is used for determining the proportion of mixed gas, and the lower limit of an RPS power operation window is reduced by influencing the OH bond coverage density on the surface of an oxide film layer, so that the deposition rate requirement of an FCVD process is met.

The invention relates to the technical field of thermal power generating unit intelligent operation, in particular to a thermal power generating unit intelligent operation auxiliary decision-making system based on big data analysis, which comprises a water cooling wall working condition synchronous acquisition module, a temperature difference dynamic compensation module, a soot deposition rate analysis module, a soot blowing demand prediction module and an intelligent soot blowing decision-making module. Wherein the temperature difference dynamic compensation module is used for executing humidity compensation calculation on pipe wall temperature difference data and outputting compensated temperature difference data; the ash deposition rate analysis module is used for calculating current water-cooled wall ash deposition rate data; the soot blowing demand prediction module is used for calculating remaining effective time data for reaching the maximum allowable soot deposition thickness; the intelligent soot blowing decision module is used for matching a corresponding soot blowing strategy; according to the method, through multi-source data fusion and dynamic soot blowing strategy matching, accurate prediction and efficient soot blowing decision making of water-cooled wall soot deposition are achieved, and the safety and economical efficiency of the boiler are remarkably improved.

The invention provides a shallow trench isolation structure, a preparation method thereof and a semiconductor device, an insulating blocking layer is formed by adopting a non-ISSG process after an oxide repair layer is formed by adopting an ISSG process and before a silicon oxide film is formed, and the blocking layer made of an insulating material can block-OH and-H ions mixed in the oxide repair layer, so that the isolation performance of the semiconductor device is improved. Therefore, nonuniformity of consumption of active sites-C-H when ozone and TEOS thermal chemical reaction are carried out by more-OH ions in the shallow trench and less-OH ions on the hard mask layer is avoided, consistency of deposition rate and uniformity of a silicon oxide film inside and outside the shallow trench is improved, early sealing of the top of the shallow trench is avoided, and the yield of the shallow trench is improved. Holes and / or gaps in the shallow trench isolation structure are reduced, the hole filling capability and quality of the HARP process are improved, and the reliability and stability of a semiconductor device formed subsequently are improved. In addition, the deposition uniformity of the HARP process on ISSG OX can be improved, and the load of the subsequent CMP process is reduced; in addition, a process window of HARP can be increased, and the back etching amount of the hard mask layer is reduced.

The invention provides an all-solid-state inorganic electrochromic glass preparation method and a monitoring regulation and control system, and relates to the technical field of glass preparation, and the method comprises the following steps: APCVD deposition of a film layer: plating a glass substrate with a first conductive film layer; plating a first insulating layer on the first conductive film layer; plating a main color-changing layer on the first insulating layer to obtain an electrochromic layer; pVD film layer deposition: plating a second insulating layer on the electrochromic layer; plating an electrochromic storage layer on the second insulating layer; and plating a second conductive layer on the electrochromic storage layer. By combining the APCVD and PVD processes, double reduction of equipment investment and material cost is realized, accurate control of the APCVD process and high deposition rate of the PVD process are combined, effective deposition rate is increased, uniformity and quality of a film layer are ensured, and two insulating layers are added on two sides of the electrochromic layer, so that electric leakage is effectively reduced, and the electrochromic effect is improved. The energy loss is reduced, and the aging process of the film layer is slowed down.

The invention relates to an amorphous film and a preparation method and application thereof.The amorphous film is an AlSiC amorphous film and is composed of Al, Si and C. The preparation method of the amorphous film comprises the following steps that a target material is provided, the amorphous film is deposited on a base body through a magnetron sputtering method, and the amorphous film can be used as a surface protection material. The AlSiC amorphous film is formed by disorderly arranging three kinds of atoms of Al, Si and C, so that the AlSiC amorphous film has high strength, high hardness and high toughness, toughness integration of the amorphous film is achieved, and therefore when the AlSiC amorphous film serves as a surface protection material, the protection effect is good, and the service life is longer. Meanwhile, the AlSiC amorphous film is prepared through a magnetron sputtering method, the deposition rate is stable, and the AlSiC amorphous film obtained through deposition is uniform in component, compact in structure, few in defect, good in combination with a base body and high in adhesive force.

The invention discloses a preparation method of a wear-resistant coating on the surface of a planetary ball screw, and relates to the technical field of preparation of wear-resistant coatings. The preparation method of the wear-resistant coating on the surface of the planetary ball screw specifically comprises the following steps: S1, cleaning a substrate; s2, mounting a substrate; s3, ion cleaning is conducted, specifically, a glow cleaning process and a high-energy ion cleaning process are sequentially conducted for cleaning; s4, preparing a Ti binding force layer; s5, preparing a TiN transition layer; s6, a TiAlSiN nano coating is prepared; s7, sampling, wherein a sample is taken after 60-90 min after coating preparation is completed; the wear-resistant coating has the characteristic of integration of high strength and toughness, the prepared coating has high uniformity, and the process of the coating is flexible and adjustable. In addition, the pipe inner wall coating prepared through the method is high in deposition rate, easy and convenient to operate, low in cost and suitable for batch production.

There is a challenge with limited quantitative yield and uniformity of film being deposited by a chemical vapor deposition (CVD) process. The present disclosure provide methods and systems for real-time optimization and control of substrate in motion CVD. In the present disclosure, solution for improving KPIs of chemical vapor deposition process of transition metal dichalcogenides (TMDs) in a horizontal CVD reactor is provided. A provision of substrates in motion CVD reactor is provided that makes substrate to reciprocate, rotate, revolve, or oscillate in horizontal and vertical direction to improve deposition rates. The present disclosure increases deposition rate by providing more surface area to precursors flowing into the CVD reactor. An effect of process parameters is investigated using computational fluid dynamics (CFD), machine learning and optimization process. This leads to optimization of the CVD reactor and optimized recommendation settings for the CVD reactor are obtained.

The present invention relates to a shielding compound, a method of forming a thin film using the shielding compound, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as a shielding agent, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the shielding agent, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, and impurities may be reduced.

The invention belongs to the technical field of silicon carbide coatings, and particularly relates to a method for quickly depositing a silicon carbide coating through CVD (Chemical Vapor Deposition), which comprises the following steps: pretreating a graphite substrate; debugging the equipment; placing the pretreated substrate in a reaction furnace, closing a furnace door, starting a vacuum system, pumping the pressure in the reaction furnace to-Pa, and reducing the interference of air in the furnace on the reaction; introducing a small amount of hydrogen into the reaction furnace, rapidly raising the temperature in the furnace to 800-900 DEG C, maintaining the temperature, then introducing a very small amount of silicon source and carbon source gas, and carrying out preliminary deposition on the surface of the substrate; and hydrogen, silicon tetrachloride and methane are sequentially introduced. The preparation method of the CVD silicon carbide coating can solve the problems of low deposition rate, long preparation period and the like when the existing CVD process is used for preparing the silicon carbide coating, so that the production efficiency can be greatly improved, the cost can be reduced, and the preparation method has important significance in promoting the application of the silicon carbide coating in more fields.

The present invention relates to a step coverage improver, a method of forming a thin film using the step coverage improver, a semiconductor substrate including the thin film, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound with a predetermined structure as the step coverage improver, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the compound, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be improved, and impurities may be greatly reduced.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention provides a laser additive manufacturing control method, device and equipment based on energy feedback. The method provided by the invention comprises the following steps: pre-fitting a first corresponding relation between laser power variation and deposition rate variation, a second corresponding relation between scanning speed variation and deposition rate variation and a third corresponding relation between light spot diameter and deposition rate variation; the current actual deposition rate is determined, and the deposition rate deviation value is determined according to the actual deposition rate and the expected deposition rate; the deposition rate deviation value serves as input of a PID control algorithm, and control output quantity is determined; determining the change direction of the laser power and the change direction of the scanning speed according to the deposition rate deviation value; determining a laser power variation, a scanning speed variation and a light spot diameter variation; and respectively adjusting the laser power, the scanning speed and the light spot diameter. The laser additive manufacturing control method based on energy feedback is used for achieving accurate control and optimization of the micro additive manufacturing process.

The invention discloses a laser additive manufacturing method with low heat input and high deposition efficiency and application. The invention belongs to the field of additive manufacturing. The invention aims to solve the technical problem that the existing laser additive manufacturing method cannot meet the deposition quality of a workpiece and also cannot consider the deposition efficiency under the condition of low heat input. According to the method, a metal welding strip is used as a filling material, rectangular laser is used as a heat source, and layer-by-layer deposition is carried out under Ar gas protection. The characteristics that the middle section of a rectangular laser spot is flat and the edge is steep are coupled with the strip-shaped filling metal, the uniformity of energy distribution of the rectangular laser on the strip-shaped metal is further improved, it is guaranteed that good interlayer metallurgical bonding of the filling metal material is achieved under the limited heat input condition, and the deposition speed can be increased to the maximum extent. In addition, under the combined action of the rectangular laser and the rectangular welding strip, the high deposition rate is met, and meanwhile the high deposition yield can be obtained. The method can be applied to additive manufacturing of other heat-sensitive alloys.