425 results about "Deposition rate" patented technology

The invention relates to an intelligent vacuum coating quality monitoring method based on artificial intelligence, which comprises the following steps: collecting process parameters in real time through a coating equipment sensor, dynamically monitoring vacuum degree change, deposition rate deviation and temperature gradient, and standardizing data flow to obtain a quantitative trend curve of process parameter fluctuation; combining the defect microcosmic feature description set with gas flow fluctuation and power supply voltage jitter to obtain a correlation analysis result of process parameters and defect forms, and calibrating defect types according to a defect feature library to obtain an updated defect classification basis; and inputting real-time new surface image data through the updated defect classification basis, performing defect detection for illumination reflection differences and stripe deflection angles, obtaining a preliminary defect classification result, and adjusting classification weight parameters.

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The embodiment of the invention provides a deposition rate control method and device, a storage medium and a program product. Belongs to the technical field of semiconductor devices. The method comprises the following steps: periodically acquiring a deposition rate, wherein the deposition rate corresponds to a data acquisition moment; determining a deposition rate change rate corresponding to the data acquisition moment according to the deposition rate corresponding to the data acquisition moment; according to the deposition rate corresponding to the data acquisition moment and the deposition rate change rate, whether a power threshold value is increased or not is judged; if it is judged that the power threshold value is increased, the power output minimum value and the power output maximum value are increased; and carrying out light-emitting layer deposition by adopting output power which is greater than the power output minimum value and less than the power output maximum value. According to the method, the problems that the deposition rate is unstable and defects are increased due to the fact that the adjustment range of the power is large when the power output is dynamically adjusted are solved.

The invention discloses a radiation-resistant high-entropy alloy magnetron sputtering coating and a preparation method thereof, and belongs to the technical field of radiation-resistant coating materials. On the basis of the multi-element synergistic effect and lamination interface design of the high-entropy alloy, FeCrNi and FeNiCrMn are used as target materials, and the coating with the nanometer lamination structure is prepared by accurately regulating and controlling the target current, the gas flow, the deposition time and other process parameters of magnetron sputtering; meanwhile, accurate control over the single-layer film thickness and the interface density is achieved by adjusting the coupling relation between the sputtering power and the deposition rate, and it is ensured that all unit layers are flat and compact, and interface combination is complete. And a multi-heterogeneous interface is formed through the design of a laminated interface, so that a defect capture network is formed, the hardness of a single-layer coating is improved, the hardening rate after irradiation can be lower than that of a traditional single-layer coating, and the problems of crystallization and brittleness failure induced by irradiation are effectively relieved.

The invention provides a lubricating oil production multi-source data fusion analysis method which comprises the following steps: acquiring a stirrer rotating speed signal, acquiring pressure distribution data of a corresponding pipeline, and if the stirrer rotating speed fluctuation range exceeds a preset threshold range, marking that the stirring rotating speed is abnormal; analyzing the pressure distribution change of the pipeline when the stirring rotating speed is abnormal, combining the monitored viscosity change of the oil fluid and the difference of the oil circulating flow speed, and performing fusion calculation to obtain a shear stress distribution index in the pipeline; if the shear stress distribution index is abnormal, the suspension state of oil particles and the deposition rate of pollution particles are detected, and if the suspension state and the deposition rate exceed corresponding preset threshold values, the oil pollution diffusion degree is determined through the suspension state and the deposition rate; and identifying abnormal equipment according to the abnormal signal time sequence correlation, acquiring operation parameters of the abnormal equipment, synchronously analyzing to obtain equipment operation state coupling, analyzing equipment fault chain reaction characteristics, and generating an equipment chain abnormality distribution diagram according to the chain reaction characteristics.

The invention relates to a jet flow electrochemical deposition rate self-adaptive control method and system, and belongs to the technical field, and the method comprises the steps: carrying out the physical field model construction of collected data through a digital twinning technology, and constructing a jet flow electrochemical deposition rate self-adaptive control model based on deep learning and a physical model; therefore, optimized working parameters of the chemical additive manufacturing equipment are generated through the jet flow electrochemical deposition rate self-adaptive control model, a visualization system is constructed based on the collected data, and finally interaction control is conducted on the chemical additive manufacturing equipment through the visualization system. According to the method, a high-fidelity virtual model which synchronously runs with physical equipment is created, and before a complex spiral structure is printed, full-process simulation can be performed in a digital twinning body, which corners possibly have defects due to rate mismatch can be found in advance, and optimized manufacturing production parameters are generated; therefore, dynamic fine adjustment is carried out according to real-time current and image data, and closed-loop control is realized.

The invention discloses a molecular dynamics simulation method, device and equipment oriented to a molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a transition state path, and constructing an initialized data set; training an initial neural evolution potential function based on the initialized data set, performing a small-scale extrapolation experiment, establishing an evaluation function, screening a differentiation configuration, and executing DFT precision verification to form an enhanced training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after feature fusion and cross validation, deduction is carried out, the deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.

The present invention belongs to the technical field of ceramic preparation, and relates to a preparation method and device for a high-purity porous boron carbide nuclear control rod. The present invention uses boron trichloride gas as the boron source, methane as the carbon source, argon as the carrier gas and protective gas, and hydrogen as the catalytic gas and reducing gas to prepare a high-purity porous boron carbide nuclear control rod. The method of increasing the deposition temperature of boron carbide step by step and region by region from the back to the front is adopted, which can not only improve the deposition rate of boron carbide, but also ensure that the physical and mechanical properties of each part of the prepared high-purity porous boron carbide nuclear control rod are consistent. By changing the particle size of the boron carbide powder for preparing the boron carbide blank and coordinating the adjustment of temperature, flow rate, pressure and deposition time, the porosity and pore size of the prepared high-purity porous boron carbide can be regulated and a high total boron and carbon content can be obtained, so as to meet various actual requirements.

The invention discloses a hydrophobic diamond-like carbon coating and a preparation method thereof. The hydrophobic diamond-like carbon coating comprises a transition layer and an F-DLC layer. The preparation method comprises the following steps: S1, cleaning the substrate; s2, the coating chamber is vacuumized and heated, and the coating chamber and the base body are baked; s3, carrying out ion etching cleaning on the surface of the substrate; s4, after etching is completed, a Cr layer or a Ti layer is deposited on the surface of the base body in a magnetron sputtering mode to serve as a transition layer; and S5, inert gas and carbon tetrafluoride are introduced, the graphite target is started, and the F-DLC layer is deposited in an arc ion plating mode. Wherein in the step S5, the ratio of the introduced inert gas to the carbon tetrafluoride is 1: 0.3-1: 4, the cavity pressure of the coating cavity is 0.1-5.0 Pa, the bias voltage of the substrate is 20-800 V, and the target current of the graphite target is 20-400 A. The hydrophobic diamond-like coating is prepared in an electric arc ion plating mode, the characteristics that the target material particle energy is improved, the deposition rate is high, and the film layer compactness is good are achieved, and the prepared coating is better in hydrophobic angle and excellent in anti-sticking performance.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source cavity oxidation film stability improving method which comprises the steps that high-temperature steam hole sealing treatment is conducted on an aluminum material subjected to surface pretreatment; cutting to remove the diaspore layer on the surface; and performing mixed gas passivation on the dissociation cavity and circulating for preset times, wherein the mixed gas passivation comprises pre-passivation, hydration passivation and synergistic passivation. Firstly, high-temperature steam hole sealing is carried out on an oxide layer, then a surface diaspore layer is cut, the number of surface active sites is increased, and OH bond adsorption is facilitated; then pre-passivation, hydration passivation and synergistic passivation are carried out, and circulation is carried out for preset times, so that the stability of OH bonds is ensured, and the service life of the RPS cavity is prolonged; a random forest algorithm is used for determining the proportion of mixed gas, and the lower limit of an RPS power operation window is reduced by influencing the OH bond coverage density on the surface of an oxide film layer, so that the deposition rate requirement of an FCVD process is met.

The invention relates to the technical field of thermal power generating unit intelligent operation, in particular to a thermal power generating unit intelligent operation auxiliary decision-making system based on big data analysis, which comprises a water cooling wall working condition synchronous acquisition module, a temperature difference dynamic compensation module, a soot deposition rate analysis module, a soot blowing demand prediction module and an intelligent soot blowing decision-making module. Wherein the temperature difference dynamic compensation module is used for executing humidity compensation calculation on pipe wall temperature difference data and outputting compensated temperature difference data; the ash deposition rate analysis module is used for calculating current water-cooled wall ash deposition rate data; the soot blowing demand prediction module is used for calculating remaining effective time data for reaching the maximum allowable soot deposition thickness; the intelligent soot blowing decision module is used for matching a corresponding soot blowing strategy; according to the method, through multi-source data fusion and dynamic soot blowing strategy matching, accurate prediction and efficient soot blowing decision making of water-cooled wall soot deposition are achieved, and the safety and economical efficiency of the boiler are remarkably improved.

There is a challenge with limited quantitative yield and uniformity of film being deposited by a chemical vapor deposition (CVD) process. The present disclosure provide methods and systems for real-time optimization and control of substrate in motion CVD. In the present disclosure, solution for improving KPIs of chemical vapor deposition process of transition metal dichalcogenides (TMDs) in a horizontal CVD reactor is provided. A provision of substrates in motion CVD reactor is provided that makes substrate to reciprocate, rotate, revolve, or oscillate in horizontal and vertical direction to improve deposition rates. The present disclosure increases deposition rate by providing more surface area to precursors flowing into the CVD reactor. An effect of process parameters is investigated using computational fluid dynamics (CFD), machine learning and optimization process. This leads to optimization of the CVD reactor and optimized recommendation settings for the CVD reactor are obtained.

The present invention relates to a shielding compound, a method of forming a thin film using the shielding compound, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as a shielding agent, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the shielding agent, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, and impurities may be reduced.

The invention belongs to the technical field of silicon carbide coatings, and particularly relates to a method for quickly depositing a silicon carbide coating through CVD (Chemical Vapor Deposition), which comprises the following steps: pretreating a graphite substrate; debugging the equipment; placing the pretreated substrate in a reaction furnace, closing a furnace door, starting a vacuum system, pumping the pressure in the reaction furnace to-Pa, and reducing the interference of air in the furnace on the reaction; introducing a small amount of hydrogen into the reaction furnace, rapidly raising the temperature in the furnace to 800-900 DEG C, maintaining the temperature, then introducing a very small amount of silicon source and carbon source gas, and carrying out preliminary deposition on the surface of the substrate; and hydrogen, silicon tetrachloride and methane are sequentially introduced. The preparation method of the CVD silicon carbide coating can solve the problems of low deposition rate, long preparation period and the like when the existing CVD process is used for preparing the silicon carbide coating, so that the production efficiency can be greatly improved, the cost can be reduced, and the preparation method has important significance in promoting the application of the silicon carbide coating in more fields.

The present invention relates to a step coverage improver, a method of forming a thin film using the step coverage improver, a semiconductor substrate including the thin film, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound with a predetermined structure as the step coverage improver, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the compound, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be improved, and impurities may be greatly reduced.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention provides a flux-cored wire for marine crack arrest steel and a preparation method and application of the flux-cored wire, and particularly relates to the technical field of welding materials. The flux-cored wire comprises a steel strip and a flux core filled in the steel strip, and the flux core comprises the following components in parts by weight: 10-15 parts of rutile, 5-6 parts of quartz, 2-4 parts of ferrotitanium, 20-40 parts of sodium fluoride, 20-40 parts of potassium feldspar, 6-18 parts of manganese-silicon alloy, 4-8 parts of low-carbon ferromanganese, 1.5-2.5 parts of magnesium powder, 1.5-2 parts of rare earth ferrosilicon, 0.2-0.4 part of ferroboron, 1-2 parts of metallic nickel and 1.5-6 parts of iron powder. The ship crack arrest steel flux-cored wire has the advantages of being high in strength, good in low-temperature toughness, good in crack resistance, high in deposition rate, stable in electric arc, little in splashing, easy in slag removal and attractive in weld joint forming, and is suitable for welding of crack arrest steel at a core structure part of an ultra-large container ship.

The invention provides an electroplating solution and an electroplating method for preparing an antimony-containing tin-based alloy packaging bump structure. The content of antimony atoms in the bump structure is 0.1-8.0%; the electroplating liquid comprises tin (II), antimony (III), an inhibitor, methanesulfonic acid and an antioxidant; the concentrations of the tin (II), the antimony (III), the inhibitor, the methanesulfonic acid and the antioxidant in the electroplating solution are 15-60 g / L, 0.01-8.0 g / L, 0.5-15.0 g / L, 20-200 mL / L and 1.0-3.0 g / L in sequence. The electroplating solution can effectively realize co-deposition of tin ions and antimony ions, and the situation that the deposition rate is not matched in the deposition process due to the electrochemical characteristic difference of tin and antimony is overcome; the content of antimony atoms in the generated bump structure is 0.1-8.0%, and a small amount of metal antimony is added into a tin base, so that grains can be refined, the crystal face of a plating layer can be promoted to obtain excellent surface flatness, and the hardness of the plating layer can be effectively improved.

An electroplating method and an electroplating apparatus, which relate to the technical field of semiconductor processing. The electroplating method comprises: S10, applying a positive voltage to an intermediate anode, and an edge electrode not operating; S20, acquiring a deposition rate v1 of a plating layer of an intermediate region, and acquiring a deposition rate v2 of a plating layer of an edge region; S30, determining the magnitudes of v1 and v2; S40, if v1 is greater than v2, applying the positive voltage to the edge electrode, and outputting a current I; S50, if v1 is less than v2, applying a negative voltage to the edge electrode, and outputting the current I; and S60, if v1 is equal to v2, keeping an operating state of the edge electrode unchanged. By means of respectively acquiring deposition rates of plating layers of an intermediate region and an edge region, and controlling the voltage and current of an edge electrode accordingly, the deposition rate of the edge region can be dynamically adjusted, such that the deposition rates of the edge region and the intermediate region can be balanced in real time, thereby improving the uniformity of electroplating.

The invention discloses an efficient and uniform electroplating manufacturing method of a thick copper plate. The efficient and uniform electroplating manufacturing method comprises the following steps: step 1, carrying out chemical oil removal treatment and micro-etching coarsening on a substrate; step 2, carrying out pre-impregnation treatment and manufacturing a mask; 3, a pulse electroplating device is adopted for carrying out edge auxiliary electroplating on the plate edge, and 4, plating solution closed-loop regulation and control are carried out, specifically, a regulation and control system is provided, the regulation and control system comprises a plating solution regulation and control device and an automatic compensation module, and a PLC control system controls the automatic compensation module to quantitatively supply additives according to the difference between a detection value and a required value. According to the method, the electric field intensity of the edge and the center of the substrate is balanced, the thickness uniformity of the copper layer is remarkably improved, and the thickness difference between the edge and the center is reduced; and the deposition rate stability of pulse electroplating is ensured. And meanwhile, the working efficiency is improved, the electroplating time is shortened, the energy consumption is reduced, the dosage of an electroplating additive is reduced, the service life of an electroplating solution is prolonged, the binding force of a copper layer and a substrate is improved, practicability is high, and high popularization significance is achieved.

The invention discloses a rare earth metal electrolytic reduction method based on a high-frequency switching power supply, and relates to the technical field of rare earth metal electrolytic reduction, and the method comprises the following steps: firstly, in a praseodymium-neodymium electro-deposition process, parameter data in the praseodymium-neodymium electro-deposition process is accurately obtained in real time by using an advanced sensor and detection equipment; and accurate, comprehensive and real-time data support is provided for subsequent intelligent analysis. According to the invention, the problems of stress accumulation, crack propagation and coating stripping caused by fixed preset intermittent closing time in high-current density electrodeposition are solved. Intelligent optimization is realized through real-time data acquisition, deep learning evaluation and dynamic pulse current regulation and control. And when the stress rise is detected, the system adaptively prolongs the intermittent closing time, and reduces the pulse peak current, so that the deposition rate is optimized, and the uniformity and compactness of a plating layer are improved. The method improves the mechanical strength and corrosion resistance of the coating, prolongs the service life of equipment, reduces the energy consumption, and improves the process stability and consistency.

The invention relates to a vapor deposition real-time deposition rate regulation and control method and system and a preparation method and equipment of a silicon carbide coating. The regulation and control method comprises the following steps that (1) the current mass deposition rate in the vapor deposition treatment process is obtained; (2) comparing the current mass deposition rate with a target mass deposition rate to obtain a deposition rate comparison result; (3) if the deposition rate comparison result is that the difference value between the current mass deposition rate and the target mass deposition rate is not within the preset range, at least one parameter of the real-time deposition temperature, the real-time deposition pressure and the real-time mass flow rate of the gas source in the vapor deposition treatment process is corrected; (4) after the step (3), repeating the steps (1)-(3) for n times until the deposition rate comparison result is within a preset value; n is an integer. According to the method, the deposition thickness of the coating in unit time can be more accurately controlled, so that the uniformity of the thickness of the coating and the quality of the coating are improved.

The present application relates to the field of electronic components and electronic special materials manufacturing, and in particular to a method for preparing a silicon carbide epitaxial wafer for chips using an alkylsilane. When an alkylsilane precursor is used for CVD deposition of SiC, a decomposition temperature is moderate, decomposition products are simple, deposition efficiency is high, use safety is high, there is no spontaneous combustion in air, and storage stability is good. Using an alkylsilane precursor can form stable single crystal SiC crystals and thin films at 100°C-200°C lower than conventional materials, and has high crystal growth and film formation efficiency with few defects, making a good semi-insulating SiC raw material. In addition, as an SiC precursor for CVD / CVI, an alkylsilane precursor is a non-corrosive, single-source silicon-carbon compound having the lowest molecular weight. Due to the high SiC content in precursor molecules, the deposition rate is faster and the deposition temperature is lower, and nearly stoichiometric SiC can be obtained. It is the optimal solution for growing SiC crystals in high-temperature chemical vapor deposition processes.

Disclosed in the embodiments of the present application are a wafer etching or deposition method, a model acquisition method and a semiconductor processing apparatus. The present application particularly relates to a temperature control method for each temperature control zone of a multi-temperature-zone electrostatic chuck or a heating substrate. The temperature control method combines the effects of temperature sensitivity and the diffusion distribution of etching byproducts or deposits along with temperature gradients on etching or deposition rates, and therefore can more accurately predict etching or deposition rate distribution data of each position on a wafer at any target temperature in each temperature control zone, or regulate a target temperature control value of each temperature control zone on the basis of target etching or deposition rate distribution data, so as to improve the uniformity of wafer etching or deposition, or enable surfaces of wafers to have expected morphology.

The utility model belongs to the technical field of crucibles, and particularly relates to a perovskite evaporation source crucible assembly which comprises a quartz crucible with an opening at one end, at least one heat conduction piece arranged in the quartz crucible and a filtering piece arranged in the quartz crucible and located above the heat conduction piece. And the filtering piece covers the upper opening of the quartz crucible. According to the utility model, through the arrangement of the honeycomb-shaped heat conduction member and the filtering member, the original perovskite raw material is easier to volatilize, the loss of heating power is reduced, the time for stabilizing the deposition rate is shortened, and the large-scale mass production is facilitated; the filter screen is additionally arranged, so that raw materials are more conveniently prevented from splashing to pollute other raw materials, large blasting-boiling particles can be filtered out and splashed to a substrate in the evaporation process, a film layer grows finer and smoother, the quality is better, and defects caused to the film layer are avoided.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

A deposition method includes executing a first deposition recipe on a first wafer to turn a first wafer state of the first wafer to a second wafer state; collecting the second wafer state of the first wafer to generate a first set of data; and analyzing the first set of data and updating the first deposition recipe to a second deposition recipe when the first set of data is not within a predetermined range. The second deposition recipe is generated taking into consideration at least one of a deposition rate of the second wafer, a rate of rotation of the second wafer, a tilt angle of the second wafer, an etching recipe of the first wafer, and an implanting recipe of the first wafer. The second deposition recipe is configured to be applied on a second wafer to be processed after the first wafer.

The utility model relates to a welding gun, in particular to a double-wire double-power CO2 welding gun. The double-wire and double-power-source CO2 welding gun comprises a handle, a shell, a first gun head, a second gun head, wire feeding pipes, a power line, a wire feeding assembly and a rotating assembly, the shell is rotationally connected to the upper end of the handle, the first gun head and the second gun head are symmetrically connected to the right side of the shell, the wire feeding pipes are symmetrically connected into the shell, and the rotating assembly is connected with the power line. The two wire feeding pipes are connected and communicated with the first gun head and the second gun head on the same side respectively, the top of each wire feeding pipe is connected with a power line, a wire feeding assembly is arranged in the shell, and a rotating assembly is arranged on the handle. By arranging the first gun head and the second gun head, the requirement for simultaneous use of two welding wires is met, due to the fact that the two welding wires are molten at the same time, the deposition speed of materials can be remarkably increased, the welding process is accelerated, and the production efficiency is improved.

The invention relates to a large-size wide-spectrum infrared color separation film with controllable surface precision and a manufacturing method thereof, the color separation film takes a silicon plain film as a substrate, a color separation film is designed on a light incident surface of the silicon substrate, germanium and zinc sulfide are used as high and low refractive index materials of a reflecting film stack, ytterbium fluoride is added in a matching layer, the film thickness ratio is regulated and controlled, and a thin film deposition process is optimized. The surface type change caused by the film layer is reduced; a thickness compensation film layer is added when the antireflection film is designed on the light transmission surface of the silicon substrate, so that the stress of the antireflection film and the stress of the color separation film are mutually counteracted, and the surface type is controlled. Appropriate substrate temperature, deposition rate and local film layer ion auxiliary deposition are adopted in the preparation of the color separation film, and the environmental reliability is good. The prepared large-size color separation sheet is controllable in surface type, the surface type precision RMS of the color separation surface is 0.028 lambda, the surface type precision RMS of the anti-reflection surface is 0.042 lambda, the large-size color separation sheet can highly reflect a broadband of 2-3.95 microns and highly transmit a broadband of 4.2-5.1 microns, and the large-size color separation sheet can be used for spectrum color separation of a large-view-field infrared optical system.