294 results about "Deposition rate" patented technology

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The embodiment of the invention provides a deposition rate control method and device, a storage medium and a program product. Belongs to the technical field of semiconductor devices. The method comprises the following steps: periodically acquiring a deposition rate, wherein the deposition rate corresponds to a data acquisition moment; determining a deposition rate change rate corresponding to the data acquisition moment according to the deposition rate corresponding to the data acquisition moment; according to the deposition rate corresponding to the data acquisition moment and the deposition rate change rate, whether a power threshold value is increased or not is judged; if it is judged that the power threshold value is increased, the power output minimum value and the power output maximum value are increased; and carrying out light-emitting layer deposition by adopting output power which is greater than the power output minimum value and less than the power output maximum value. According to the method, the problems that the deposition rate is unstable and defects are increased due to the fact that the adjustment range of the power is large when the power output is dynamically adjusted are solved.

The invention provides a lubricating oil production multi-source data fusion analysis method which comprises the following steps: acquiring a stirrer rotating speed signal, acquiring pressure distribution data of a corresponding pipeline, and if the stirrer rotating speed fluctuation range exceeds a preset threshold range, marking that the stirring rotating speed is abnormal; analyzing the pressure distribution change of the pipeline when the stirring rotating speed is abnormal, combining the monitored viscosity change of the oil fluid and the difference of the oil circulating flow speed, and performing fusion calculation to obtain a shear stress distribution index in the pipeline; if the shear stress distribution index is abnormal, the suspension state of oil particles and the deposition rate of pollution particles are detected, and if the suspension state and the deposition rate exceed corresponding preset threshold values, the oil pollution diffusion degree is determined through the suspension state and the deposition rate; and identifying abnormal equipment according to the abnormal signal time sequence correlation, acquiring operation parameters of the abnormal equipment, synchronously analyzing to obtain equipment operation state coupling, analyzing equipment fault chain reaction characteristics, and generating an equipment chain abnormality distribution diagram according to the chain reaction characteristics.

The invention relates to a jet flow electrochemical deposition rate self-adaptive control method and system, and belongs to the technical field, and the method comprises the steps: carrying out the physical field model construction of collected data through a digital twinning technology, and constructing a jet flow electrochemical deposition rate self-adaptive control model based on deep learning and a physical model; therefore, optimized working parameters of the chemical additive manufacturing equipment are generated through the jet flow electrochemical deposition rate self-adaptive control model, a visualization system is constructed based on the collected data, and finally interaction control is conducted on the chemical additive manufacturing equipment through the visualization system. According to the method, a high-fidelity virtual model which synchronously runs with physical equipment is created, and before a complex spiral structure is printed, full-process simulation can be performed in a digital twinning body, which corners possibly have defects due to rate mismatch can be found in advance, and optimized manufacturing production parameters are generated; therefore, dynamic fine adjustment is carried out according to real-time current and image data, and closed-loop control is realized.

The invention discloses a molecular dynamics simulation method, device and equipment oriented to a molecular beam epitaxy process, and relates to the technical field of deposition in microelectronic manufacturing, and the method comprises the steps: analyzing a transition state path, and constructing an initialized data set; training an initial neural evolution potential function based on the initialized data set, performing a small-scale extrapolation experiment, establishing an evaluation function, screening a differentiation configuration, and executing DFT precision verification to form an enhanced training set; after multi-round iteration, a final potential function is output until a convergence condition is met; large-scale molecular dynamics simulation is carried out, different data sets are constructed, a potential function is trained after feature fusion and cross validation, deduction is carried out, the deposition rate is counted, and the reaction deposition selection ratio is estimated. According to the method, the dynamic evolution rule of the heterogeneous interface defect can be accurately analyzed, the real technological process problem is flexibly locked, and microsecond-level real-time closed-loop accurate control of the atomic layer growth rate is realized.

The invention belongs to the technical field of silicon carbide coatings, and particularly relates to a method for quickly depositing a silicon carbide coating through CVD (Chemical Vapor Deposition), which comprises the following steps: pretreating a graphite substrate; debugging the equipment; placing the pretreated substrate in a reaction furnace, closing a furnace door, starting a vacuum system, pumping the pressure in the reaction furnace to-Pa, and reducing the interference of air in the furnace on the reaction; introducing a small amount of hydrogen into the reaction furnace, rapidly raising the temperature in the furnace to 800-900 DEG C, maintaining the temperature, then introducing a very small amount of silicon source and carbon source gas, and carrying out preliminary deposition on the surface of the substrate; and hydrogen, silicon tetrachloride and methane are sequentially introduced. The preparation method of the CVD silicon carbide coating can solve the problems of low deposition rate, long preparation period and the like when the existing CVD process is used for preparing the silicon carbide coating, so that the production efficiency can be greatly improved, the cost can be reduced, and the preparation method has important significance in promoting the application of the silicon carbide coating in more fields.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention provides an electroplating solution and an electroplating method for preparing an antimony-containing tin-based alloy packaging bump structure. The content of antimony atoms in the bump structure is 0.1-8.0%; the electroplating liquid comprises tin (II), antimony (III), an inhibitor, methanesulfonic acid and an antioxidant; the concentrations of the tin (II), the antimony (III), the inhibitor, the methanesulfonic acid and the antioxidant in the electroplating solution are 15-60 g / L, 0.01-8.0 g / L, 0.5-15.0 g / L, 20-200 mL / L and 1.0-3.0 g / L in sequence. The electroplating solution can effectively realize co-deposition of tin ions and antimony ions, and the situation that the deposition rate is not matched in the deposition process due to the electrochemical characteristic difference of tin and antimony is overcome; the content of antimony atoms in the generated bump structure is 0.1-8.0%, and a small amount of metal antimony is added into a tin base, so that grains can be refined, the crystal face of a plating layer can be promoted to obtain excellent surface flatness, and the hardness of the plating layer can be effectively improved.

The invention discloses an efficient and uniform electroplating manufacturing method of a thick copper plate. The efficient and uniform electroplating manufacturing method comprises the following steps: step 1, carrying out chemical oil removal treatment and micro-etching coarsening on a substrate; step 2, carrying out pre-impregnation treatment and manufacturing a mask; 3, a pulse electroplating device is adopted for carrying out edge auxiliary electroplating on the plate edge, and 4, plating solution closed-loop regulation and control are carried out, specifically, a regulation and control system is provided, the regulation and control system comprises a plating solution regulation and control device and an automatic compensation module, and a PLC control system controls the automatic compensation module to quantitatively supply additives according to the difference between a detection value and a required value. According to the method, the electric field intensity of the edge and the center of the substrate is balanced, the thickness uniformity of the copper layer is remarkably improved, and the thickness difference between the edge and the center is reduced; and the deposition rate stability of pulse electroplating is ensured. And meanwhile, the working efficiency is improved, the electroplating time is shortened, the energy consumption is reduced, the dosage of an electroplating additive is reduced, the service life of an electroplating solution is prolonged, the binding force of a copper layer and a substrate is improved, practicability is high, and high popularization significance is achieved.

The invention discloses a rare earth metal electrolytic reduction method based on a high-frequency switching power supply, and relates to the technical field of rare earth metal electrolytic reduction, and the method comprises the following steps: firstly, in a praseodymium-neodymium electro-deposition process, parameter data in the praseodymium-neodymium electro-deposition process is accurately obtained in real time by using an advanced sensor and detection equipment; and accurate, comprehensive and real-time data support is provided for subsequent intelligent analysis. According to the invention, the problems of stress accumulation, crack propagation and coating stripping caused by fixed preset intermittent closing time in high-current density electrodeposition are solved. Intelligent optimization is realized through real-time data acquisition, deep learning evaluation and dynamic pulse current regulation and control. And when the stress rise is detected, the system adaptively prolongs the intermittent closing time, and reduces the pulse peak current, so that the deposition rate is optimized, and the uniformity and compactness of a plating layer are improved. The method improves the mechanical strength and corrosion resistance of the coating, prolongs the service life of equipment, reduces the energy consumption, and improves the process stability and consistency.

The utility model belongs to the technical field of crucibles, and particularly relates to a perovskite evaporation source crucible assembly which comprises a quartz crucible with an opening at one end, at least one heat conduction piece arranged in the quartz crucible and a filtering piece arranged in the quartz crucible and located above the heat conduction piece. And the filtering piece covers the upper opening of the quartz crucible. According to the utility model, through the arrangement of the honeycomb-shaped heat conduction member and the filtering member, the original perovskite raw material is easier to volatilize, the loss of heating power is reduced, the time for stabilizing the deposition rate is shortened, and the large-scale mass production is facilitated; the filter screen is additionally arranged, so that raw materials are more conveniently prevented from splashing to pollute other raw materials, large blasting-boiling particles can be filtered out and splashed to a substrate in the evaporation process, a film layer grows finer and smoother, the quality is better, and defects caused to the film layer are avoided.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The invention relates to a large-size wide-spectrum infrared color separation film with controllable surface precision and a manufacturing method thereof, the color separation film takes a silicon plain film as a substrate, a color separation film is designed on a light incident surface of the silicon substrate, germanium and zinc sulfide are used as high and low refractive index materials of a reflecting film stack, ytterbium fluoride is added in a matching layer, the film thickness ratio is regulated and controlled, and a thin film deposition process is optimized. The surface type change caused by the film layer is reduced; a thickness compensation film layer is added when the antireflection film is designed on the light transmission surface of the silicon substrate, so that the stress of the antireflection film and the stress of the color separation film are mutually counteracted, and the surface type is controlled. Appropriate substrate temperature, deposition rate and local film layer ion auxiliary deposition are adopted in the preparation of the color separation film, and the environmental reliability is good. The prepared large-size color separation sheet is controllable in surface type, the surface type precision RMS of the color separation surface is 0.028 lambda, the surface type precision RMS of the anti-reflection surface is 0.042 lambda, the large-size color separation sheet can highly reflect a broadband of 2-3.95 microns and highly transmit a broadband of 4.2-5.1 microns, and the large-size color separation sheet can be used for spectrum color separation of a large-view-field infrared optical system.

Provided are methods for low temperature thermal deposition of silicon-containing films. The methods provide selective deposition on a variety of substrates with high deposition rates and short cycle times.

The application discloses a CVD / CVI digital model and prediction method, which comprises a first H2 barrel, an Ar barrel, a second H2 barrel, a chemical vapor deposition reactor, a gas mixer and an electronic balance with a heating function; the output port of the first H2 barrel, the output port of the Ar barrel and the electronic balance with the heating function are all connected with the gas mixer; the output port of the second H2 barrel is connected with the gas mixer; and the gas mixer is connected with the gas inlet of the chemical vapor deposition reactor; the application realizes fast and accurate prediction of the deposition rate of SiC in a wide CVD / CVI process parameter range, and lays a theoretical and method foundation for future CVD / CVI digital twinning and intelligent manufacturing.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

A preparation method of a germanium substrate 2-2.3 mu m short wave low reflection film system comprises the following steps: S1, cleaning of the germanium substrate as a lens and an accompanying plating piece, the accompanying plating piece being a round piece and a wedge-shaped piece; S2, loading the lens into a tool clamp, and hanging the tool clamp into a cavity; S3, vacuumizing and cleaning a Hall ion source; S4, sequentially coating each film layer on a first surface of the lens according to 34.8 nm SiO / 64.3 nm Ge / 52.2 nm ZnS / 272.8 nm SiO, electron beam heating evaporation of SiO film layers and Ge film layers, resistance heating evaporation of ZnS film layers, a deposition rate of the SiO film layer being 0.6 nm / s, a deposition rate of the Ge film layer being 0.3 nm / s, a deposition rate of the ZnS film layer being 0.8 nm / s, and ion source assisted deposition; S5, cooling the cavity, and taking out the tool clamp together with the lens; and S6, repeating steps S1 to S5 to coat the same film system on a second surface of the lens, wherein the wedge-shaped piece is not cleaned when repeating step S1, and is not put into the tool clamp when repeating step S2.

The invention provides a method for improving the film thickness stability of semiconductor process equipment. The method comprises the following steps: judging whether the accumulated film thickness of a spray header reaches a preset threshold value or not, and if so, executing cleaning; the step of plasma heating is executed after cleaning is finished, the temperature of a spray header is increased through the bombardment effect of non-reactive gas plasma, and the problem that the film thickness jumps in the initial stage of cleaning is solved; when the deposition process is executed, the film thickness compensation step is executed according to the current accumulated film thickness data, the deposition time is adjusted by establishing a deposition rate attenuation model, and the problem that the film thickness is reduced under the high accumulated film thickness is solved. According to the invention, the defect of no active temperature control machine can be made up, and the film thickness fluctuation between wafers is controlled within 1%.

This invention relates to the field of electroless plating technology, and more particularly to a low-phosphorus electroless nickel plating solution and a method for nickel plating on an aluminum alloy substrate. The low-phosphorus electroless nickel plating solution comprises the following components by mass concentration: a nickel ion source in the form of Ni... 2+ Calculated as 1.0~5.0 g / L; hypophosphite as H2PO2 ‑ The concentrations are calculated as follows: 20–45 g / L; glycine 5–40 g / L, gluconate 5–60 g / L; polyaspartic acid and / or its salts 0.2–5.0 g / L; pH buffer 2–25 g / L; alkyl glycosides 0.05–1.0 g / L; iodate stabilizer, in IO3... ‑ The concentration is calculated to be 0.2~5.0 mg / L. This invention maintains a high deposition rate and significantly improves the tolerance of by-products in the bath solution under low nickel ion concentration conditions. It is also free of heavy metals and sulfur-containing organic stabilizers, reducing the metal load and environmental risk of the waste liquid. It is suitable for various aluminum alloy matrices treated with double zinc replacement.

This application relates to a method and apparatus for determining process parameters in metal compound thin film deposition. The method constructs a two-stage cascaded process prediction model. The first stage, a feature extraction model, performs nonlinear transformations and feature extraction on the process parameters, extracting intermediate feature information that comprehensively characterizes the sputtering process state. The second stage, a probabilistic prediction model, establishes a probabilistic mapping relationship between the intermediate feature information and the thin film response information, decoupling the complex nonlinear coupling relationships between multiple parameters in reactive sputtering. It outputs predicted values ​​and corresponding confidence information. Based on the predicted values ​​and confidence information, process parameters are screened, considering both target performance requirements and prediction reliability requirements. This improves the efficiency and reliability of process parameter screening, reduces the number of invalid experiments, and enables the prediction of key response quantities such as thin film deposition rate and chemical composition even with limited experimental data, shortening the process development cycle.

The present invention relates to a novel silicon precursor compound capable of preparing an excellent silicon-containing thin film, a method for preparing the same, and a method for preparing a silicon-containing thin film using the same. The silicon precursor compounds of the present invention exhibit volatility sufficient for application in all atomic layer deposition (ALD) and chemical vapor deposition (CVD) to make silicon-containing films. In particular, deposition is possible even at a high deposition rate at a high temperature, so that a silicon-containing thin film having excellent quality can be prepared.

A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.

A thin film deposition method may include preparing a substrate structure having an opening region formed in a vertical direction and a plurality of holes formed in a horizontal direction in each of two side portions exposed by the opening region, and adsorbing an inhibitor to surfaces of the substrate structure so that an adsorption density of the inhibitor outside of the plurality of holes is higher than an adsorption density inside of the plurality of holes by adsorbing the inhibitor in a deposition environment in which a gas diffusivity is larger in the vertical direction than in the horizontal direction. A deposition process of a material film on the inside and outside of the plurality of holes is then performed, wherein a deposition rate of the material film may vary according to the adsorption density of the inhibitor.

The utility model discloses an ionized magnetron sputtering system with a high deposition rate, and particularly relates to the technical field of magnetron sputtering coating, which comprises a vacuum sputtering chamber for completing film sputtering and a power supply assembly for generating sputtering yield, the power supply assembly comprises a power supply module I, a power supply module II or a power supply module III; the first power supply module comprises a HiPIMS power supply and a DCMS power supply. The second power supply module comprises a double-pulse HiPIMS power supply. The third power supply module comprises a HiPIMS-MF composite power supply. And the power supply assembly is connected with the sputtering target material through a magnetron sputtering cathode positioned at the bottom of the vacuum sputtering chamber. According to the utility model, through the arrangement of the power supply assembly, if the power supply assembly is formed by matching the HiPIMS power supply, the DCMS power supply, the double-pulse HiPIMS power supply and the HiPIMS-MF composite power supply, a higher sputtering rate can be realized on the premise of ensuring the ionization rate; the magnetron sputtering equipment is in the optimal coating working condition, and the maximum deposition rate can be achieved on the premise that the ionization rate of metal ions is guaranteed.

The application discloses a magnetron sputtering coating method and a magnetron sputtering coating device, and belongs to the technical field of glass substrate sputtering. The method comprises the following steps: obtaining a first area of a target material sputtering surface; constructing an auxiliary magnetic field vertically towards the surface of a substrate in a coating chamber when a magnetron moves to a position vertically opposite to other areas of the sputtering surface except the first area; and closing the auxiliary magnetic field when the magnetron moves to a position vertically opposite to the first area. The speed of sputtering particles flying to the substrate in the edge area can be effectively improved, thereby improving the efficiency. When the magnetron is vertically opposite to the first area, the auxiliary magnetic field is closed, the through-hole sidewall coverage and film thickness uniformity of the edge area of the substrate are significantly improved on the premise of maintaining a high deposition rate in the central area, and the inherent defect of 'thin edge and thick center' in a large target-substrate distance process is solved.

The present application relates to a multi-control variable control method of a polycrystalline silicon reduction furnace based on a positive mechanism model, comprising the following steps: S1, collecting and calculating the reaction state, i.e. the real-time deposition rate and the heat loss rate of the reaction; S2, inferring the control parameters: determining the control parameters in the PID control process based on the difference between the real-time deposition rate curve and the target deposition rate curve, wherein the real-time deposition rate curve is generated based on the real-time deposition rate of the reaction progress sequence, and the target deposition rate curve is a preset curve; S3, performing the PID control process: using the control parameters in step S2 to perform PID control on the hydrogen input and the reaction current; the present method determines the optimal deposition rate curve through data analysis, and calculates the deposition rate in real time during the control process. The current heat proportion in the furnace is calculated by using the thermodynamic formula, and the hydrogen and the current are precisely regulated and controlled by combining the proportion with the deposition rate difference, which significantly improves the stability and accuracy of the production process.

The invention discloses an atomic-scale construction method for manufacturing a semiconductor substrate quantum simulator, which comprises the following steps: firstly, depositing singly distributed metal atoms on a semiconductor substrate at a controllable deposition rate by adopting a vacuum thermal evaporation method, and then depositing metal atoms on the semiconductor substrate at a controllable deposition rate by utilizing a longitudinal control method of a scanning tunneling microscope (STM). The metal atoms adsorbed on the surface of the substrate are carried at a target position by accurately regulating and controlling the dragging speed of the needle tip, the tunnel junction bias voltage and the tunneling current, so that lifting, placing and moving of a single atom are realized. The construction of artificial quantum dots and quantum dot molecules is realized by regulating and controlling the distance between metal atoms. A source electrode, a drain electrode and a grid electrode of quantum dot molecules are controlled in an integrated mode through vacuum evaporation, and the quantum simulator capable of simulating quantum behaviors of a specific molecular structure is formed. According to the invention, the coupling strength of the artificial quantum dot molecules is accurately regulated and controlled through the external grid voltage, and the quantum characteristics of molecule front track filling and electron transport kinematics thereof can be accurately simulated.

The application provides a Hall thruster net sputtering deposition rate measurement method and system, and relates to the technical field of thrusters, comprising: obtaining a first initial mass corresponding to a first test piece, a second initial mass corresponding to a second test piece, and a ring cylinder initial mass corresponding to a thin-walled ring cylinder placed at the same height of the Hall thruster; obtaining a first final mass corresponding to the first test piece and a ring cylinder final mass corresponding to the thin-walled ring cylinder in the case that the Hall thruster is operated based on a first measurement condition; obtaining a second final mass corresponding to the second test piece in the case that the Hall thruster is operated based on a second measurement condition; and determining a net sputtering deposition rate measurement result corresponding to the Hall thruster based on the initial masses and the final masses. The application can simplify the measurement process of the net sputtering deposition amount and the required equipment requirements, and improve the measurement accuracy of the net sputtering deposition amount.

The invention provides a thermal barrier coating high temperature resistance CMAS sedimentability evaluation method and system, and the method comprises the steps: preparing CMAS simulation particles with uniform particle size distribution through a spray granulation technology; spraying the CMAS to the surface of a thermal barrier coating sample to be evaluated by using a thermal spraying technology, observing the deposition state of the CMAS on the surface of the sample through a scanning electron microscope, carrying out image analysis and statistics based on the deposition state, and calculating the area deposition rate of the CMAS; performing three-dimensional shape reconstruction on the CMAS simulation particle sediment on the surface of the sample through a laser confocal microscope, and calculating the volume deposition rate of the CMAS based on reconstruction data; and comparing the area and volume deposition rate of the thermal barrier coating to be evaluated with a reference thermal barrier coating serving as a benchmark, and quantitatively evaluating the high-temperature CMAS deposition resistance of the thermal barrier coating to be evaluated. According to the method, the deposition behavior of the high-temperature CMAS on the surface of the thermal barrier coating is evaluated and measured, and the anti-CMAS performance of the thermal barrier coating in a real service environment is evaluated more accurately.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.