183 results about "Deposition rate" patented technology

The invention provides a field emission thruster extraction electrode indium deposition cleaning temperature control method and system, and relates to the technical field of space electric propulsion, and the method comprises the steps: obtaining multi-source temperature data and electric field intensity data of a target region, and carrying out the time-space fusion processing of the two data, and generating target feature information reflecting the deposition state of an indium material; based on the feature information, a fuzzy PID control algorithm is adopted to generate a power control signal, and then the embedded heating unit is adjusted; monitoring electrothermal characteristics to obtain thermal impedance parameters, and further generating heat flow distribution data; analyzing heat flow data by using a state observer to predict an indium deposition growth trend to obtain deposition rate information, finally determining a cleaning control strategy according to the growth rate, and controlling temperature change in a non-uniform heating mode to enable the indium material to reach a phase change state. According to the invention, the reliability and maintenance efficiency of on-orbit long-term operation of the field emission propeller are improved.

The embodiment of the invention provides a deposition rate control method and device, a storage medium and a program product. Belongs to the technical field of semiconductor devices. The method comprises the following steps: periodically acquiring a deposition rate, wherein the deposition rate corresponds to a data acquisition moment; determining a deposition rate change rate corresponding to the data acquisition moment according to the deposition rate corresponding to the data acquisition moment; according to the deposition rate corresponding to the data acquisition moment and the deposition rate change rate, whether a power threshold value is increased or not is judged; if it is judged that the power threshold value is increased, the power output minimum value and the power output maximum value are increased; and carrying out light-emitting layer deposition by adopting output power which is greater than the power output minimum value and less than the power output maximum value. According to the method, the problems that the deposition rate is unstable and defects are increased due to the fact that the adjustment range of the power is large when the power output is dynamically adjusted are solved.

The invention relates to a jet flow electrochemical deposition rate self-adaptive control method and system, and belongs to the technical field, and the method comprises the steps: carrying out the physical field model construction of collected data through a digital twinning technology, and constructing a jet flow electrochemical deposition rate self-adaptive control model based on deep learning and a physical model; therefore, optimized working parameters of the chemical additive manufacturing equipment are generated through the jet flow electrochemical deposition rate self-adaptive control model, a visualization system is constructed based on the collected data, and finally interaction control is conducted on the chemical additive manufacturing equipment through the visualization system. According to the method, a high-fidelity virtual model which synchronously runs with physical equipment is created, and before a complex spiral structure is printed, full-process simulation can be performed in a digital twinning body, which corners possibly have defects due to rate mismatch can be found in advance, and optimized manufacturing production parameters are generated; therefore, dynamic fine adjustment is carried out according to real-time current and image data, and closed-loop control is realized.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The application discloses a CVD / CVI digital model and prediction method, which comprises a first H2 barrel, an Ar barrel, a second H2 barrel, a chemical vapor deposition reactor, a gas mixer and an electronic balance with a heating function; the output port of the first H2 barrel, the output port of the Ar barrel and the electronic balance with the heating function are all connected with the gas mixer; the output port of the second H2 barrel is connected with the gas mixer; and the gas mixer is connected with the gas inlet of the chemical vapor deposition reactor; the application realizes fast and accurate prediction of the deposition rate of SiC in a wide CVD / CVI process parameter range, and lays a theoretical and method foundation for future CVD / CVI digital twinning and intelligent manufacturing.

The invention provides a method for improving the film thickness stability of semiconductor process equipment. The method comprises the following steps: judging whether the accumulated film thickness of a spray header reaches a preset threshold value or not, and if so, executing cleaning; the step of plasma heating is executed after cleaning is finished, the temperature of a spray header is increased through the bombardment effect of non-reactive gas plasma, and the problem that the film thickness jumps in the initial stage of cleaning is solved; when the deposition process is executed, the film thickness compensation step is executed according to the current accumulated film thickness data, the deposition time is adjusted by establishing a deposition rate attenuation model, and the problem that the film thickness is reduced under the high accumulated film thickness is solved. According to the invention, the defect of no active temperature control machine can be made up, and the film thickness fluctuation between wafers is controlled within 1%.

This invention relates to the field of electroless plating technology, and more particularly to a low-phosphorus electroless nickel plating solution and a method for nickel plating on an aluminum alloy substrate. The low-phosphorus electroless nickel plating solution comprises the following components by mass concentration: a nickel ion source in the form of Ni... 2+ Calculated as 1.0~5.0 g / L; hypophosphite as H2PO2 ‑ The concentrations are calculated as follows: 20–45 g / L; glycine 5–40 g / L, gluconate 5–60 g / L; polyaspartic acid and / or its salts 0.2–5.0 g / L; pH buffer 2–25 g / L; alkyl glycosides 0.05–1.0 g / L; iodate stabilizer, in IO3... ‑ The concentration is calculated to be 0.2~5.0 mg / L. This invention maintains a high deposition rate and significantly improves the tolerance of by-products in the bath solution under low nickel ion concentration conditions. It is also free of heavy metals and sulfur-containing organic stabilizers, reducing the metal load and environmental risk of the waste liquid. It is suitable for various aluminum alloy matrices treated with double zinc replacement.

This application relates to a method and apparatus for determining process parameters in metal compound thin film deposition. The method constructs a two-stage cascaded process prediction model. The first stage, a feature extraction model, performs nonlinear transformations and feature extraction on the process parameters, extracting intermediate feature information that comprehensively characterizes the sputtering process state. The second stage, a probabilistic prediction model, establishes a probabilistic mapping relationship between the intermediate feature information and the thin film response information, decoupling the complex nonlinear coupling relationships between multiple parameters in reactive sputtering. It outputs predicted values ​​and corresponding confidence information. Based on the predicted values ​​and confidence information, process parameters are screened, considering both target performance requirements and prediction reliability requirements. This improves the efficiency and reliability of process parameter screening, reduces the number of invalid experiments, and enables the prediction of key response quantities such as thin film deposition rate and chemical composition even with limited experimental data, shortening the process development cycle.

The present invention relates to a novel silicon precursor compound capable of preparing an excellent silicon-containing thin film, a method for preparing the same, and a method for preparing a silicon-containing thin film using the same. The silicon precursor compounds of the present invention exhibit volatility sufficient for application in all atomic layer deposition (ALD) and chemical vapor deposition (CVD) to make silicon-containing films. In particular, deposition is possible even at a high deposition rate at a high temperature, so that a silicon-containing thin film having excellent quality can be prepared.

A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.

A thin film deposition method may include preparing a substrate structure having an opening region formed in a vertical direction and a plurality of holes formed in a horizontal direction in each of two side portions exposed by the opening region, and adsorbing an inhibitor to surfaces of the substrate structure so that an adsorption density of the inhibitor outside of the plurality of holes is higher than an adsorption density inside of the plurality of holes by adsorbing the inhibitor in a deposition environment in which a gas diffusivity is larger in the vertical direction than in the horizontal direction. A deposition process of a material film on the inside and outside of the plurality of holes is then performed, wherein a deposition rate of the material film may vary according to the adsorption density of the inhibitor.

The utility model discloses an ionized magnetron sputtering system with a high deposition rate, and particularly relates to the technical field of magnetron sputtering coating, which comprises a vacuum sputtering chamber for completing film sputtering and a power supply assembly for generating sputtering yield, the power supply assembly comprises a power supply module I, a power supply module II or a power supply module III; the first power supply module comprises a HiPIMS power supply and a DCMS power supply. The second power supply module comprises a double-pulse HiPIMS power supply. The third power supply module comprises a HiPIMS-MF composite power supply. And the power supply assembly is connected with the sputtering target material through a magnetron sputtering cathode positioned at the bottom of the vacuum sputtering chamber. According to the utility model, through the arrangement of the power supply assembly, if the power supply assembly is formed by matching the HiPIMS power supply, the DCMS power supply, the double-pulse HiPIMS power supply and the HiPIMS-MF composite power supply, a higher sputtering rate can be realized on the premise of ensuring the ionization rate; the magnetron sputtering equipment is in the optimal coating working condition, and the maximum deposition rate can be achieved on the premise that the ionization rate of metal ions is guaranteed.

The present application relates to a multi-control variable control method of a polycrystalline silicon reduction furnace based on a positive mechanism model, comprising the following steps: S1, collecting and calculating the reaction state, i.e. the real-time deposition rate and the heat loss rate of the reaction; S2, inferring the control parameters: determining the control parameters in the PID control process based on the difference between the real-time deposition rate curve and the target deposition rate curve, wherein the real-time deposition rate curve is generated based on the real-time deposition rate of the reaction progress sequence, and the target deposition rate curve is a preset curve; S3, performing the PID control process: using the control parameters in step S2 to perform PID control on the hydrogen input and the reaction current; the present method determines the optimal deposition rate curve through data analysis, and calculates the deposition rate in real time during the control process. The current heat proportion in the furnace is calculated by using the thermodynamic formula, and the hydrogen and the current are precisely regulated and controlled by combining the proportion with the deposition rate difference, which significantly improves the stability and accuracy of the production process.

The invention discloses an atomic-scale construction method for manufacturing a semiconductor substrate quantum simulator, which comprises the following steps: firstly, depositing singly distributed metal atoms on a semiconductor substrate at a controllable deposition rate by adopting a vacuum thermal evaporation method, and then depositing metal atoms on the semiconductor substrate at a controllable deposition rate by utilizing a longitudinal control method of a scanning tunneling microscope (STM). The metal atoms adsorbed on the surface of the substrate are carried at a target position by accurately regulating and controlling the dragging speed of the needle tip, the tunnel junction bias voltage and the tunneling current, so that lifting, placing and moving of a single atom are realized. The construction of artificial quantum dots and quantum dot molecules is realized by regulating and controlling the distance between metal atoms. A source electrode, a drain electrode and a grid electrode of quantum dot molecules are controlled in an integrated mode through vacuum evaporation, and the quantum simulator capable of simulating quantum behaviors of a specific molecular structure is formed. According to the invention, the coupling strength of the artificial quantum dot molecules is accurately regulated and controlled through the external grid voltage, and the quantum characteristics of molecule front track filling and electron transport kinematics thereof can be accurately simulated.

The application provides a Hall thruster net sputtering deposition rate measurement method and system, and relates to the technical field of thrusters, comprising: obtaining a first initial mass corresponding to a first test piece, a second initial mass corresponding to a second test piece, and a ring cylinder initial mass corresponding to a thin-walled ring cylinder placed at the same height of the Hall thruster; obtaining a first final mass corresponding to the first test piece and a ring cylinder final mass corresponding to the thin-walled ring cylinder in the case that the Hall thruster is operated based on a first measurement condition; obtaining a second final mass corresponding to the second test piece in the case that the Hall thruster is operated based on a second measurement condition; and determining a net sputtering deposition rate measurement result corresponding to the Hall thruster based on the initial masses and the final masses. The application can simplify the measurement process of the net sputtering deposition amount and the required equipment requirements, and improve the measurement accuracy of the net sputtering deposition amount.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

The application relates to a device for pre-ionization hollow cathode tube discharge for rapidly and uniformly depositing a thin film on the inner wall of an elongated tube and a use method thereof. The device belongs to the field of surface treatment. The device solves the problems of hollow cathode target deformation failure and difficulty in uniformly and rapidly depositing a large-thickness thin film on the inner wall of an elongated tube. The device comprises a pre-ionization device composed of a pre-ionization power supply, a pre-ionization ion source and an anode ring; the pre-ionization ion source, the anode ring, the hollow cathode target material, the elongated tube and the anode rod are coaxially arranged. The pre-ionization ion source is arranged to reduce the difficulty of hollow cathode target material discharge, improve the hollow cathode target material discharge intensity, reduce the heat input of the hollow cathode target material port, avoid the port overheating deformation failure, and further improve the thin film deposition rate. The reciprocating mechanism drives the relative movement of the elongated tube and the hollow cathode target material discharge area, realizes the plasma discharge in the elongated tube, and solves the problem of uniformly and rapidly depositing a large-thickness thin film.

The invention discloses an in-furnace flow field regulation and control method for a vertical chemical vapor deposition furnace, which comprises the following steps of: arranging a shape follow-up shielding tool in a uniform-temperature deposition area of the chemical vapor deposition furnace, and enabling the shape follow-up shielding tool to be positioned in the direction of a gas facing surface of a base material to be deposited; after the reaction gas flow reaches the uniform-temperature deposition area from the gas inlet pipe, flow field regulation and control are conducted on the reaction gas flow through a shape follow-up shielding tool, and the reaction gas flow indirectly reaches the upper surface and the lower surface of the base material to be deposited; finally, reaction gas flow flows out of the tail gas pipe; the conformal shielding tool is arranged in the gas facing face direction of the to-be-deposited base material in the uniform-temperature deposition area, the original gas facing face of the to-be-deposited base material can be regarded as the gas backing face of the conformal shielding tool, the upper surface and the lower surface of the to-be-deposited base material both become the gas backing face, and therefore the deposition rate of the upper surface and the deposition rate of the lower surface of the to-be-deposited base material are consistent, and the deposition efficiency is improved. And the phenomenon that the deposition thicknesses of coatings on the upper surface and the lower surface of the to-be-deposited base material are not uniform is eliminated.

The invention relates to the technical field of integrated circuit application, in particular to a magnesium alloy integrated circuit packaging structure and a quality optimization method, the surface of a magnesium alloy matrix is pretreated, a multi-layer deposition process is implemented on the surface of the matrix, and each deposition unit sequentially comprises a nucleation stage, a grain growth stage and a densification stage. A temperature curve, the current density, the deposition rate and the deposition time are respectively set and can be regulated and controlled in each stage so as to respectively regulate and control the crystal nucleus density, the grain size and the layer densification degree; temperature, current, voltage and internal stress signals are collected in real time, and a judgment threshold value is set for each type of signals so as to trigger an abnormal alarm; signals collected in real time are input into a dynamic control model, an accelerated verification test is carried out on the prepared plating layer, and a failure mode is quantitatively analyzed, through real-time regulation and control of multi-layer deposition, sensor array monitoring and accelerated verification feedback, magnesium alloy quality optimization is achieved, and application of an integrated circuit packaging structure is met.

The application provides a full-core fouling deposition prediction method and device based on a porous medium model. The method comprises the following steps: S1, modeling a pressurized water reactor core as a porous medium model and performing regular coarse grid division; S2, solving the porous medium model based on a core power distribution obtained in a previous iteration step to obtain a flow field and a phase field distribution at the current iteration step; S3, calculating a fuel rod cladding surface temperature based on the core power distribution and the flow field and the phase field distribution; S4, calculating a phase change mass transfer rate by using a boiling phase change rate model based on the cladding surface temperature and local thermal parameters; S5, calculating a fouling deposition rate by using a deposition model based on total mass balance based on the phase change mass transfer rate; S6, calculating a fouling deposition mass and a boron compound mass according to the fouling deposition rate; and S7, performing neutron calculation by taking the fouling deposition mass and the boron compound mass as input to obtain an updated core power distribution.

The invention discloses ion beam deposition equipment and an alloy film deposition method, and relates to the technical field of alloy preparation.The ion beam deposition equipment comprises the steps that firstly, the sputtering time of all alloy elements is calculated according to the thickness of a pre-deposited alloy film, the proportion of all the alloy elements in the alloy film and the deposition rate of all the alloy elements, and then the sputtering time of all the alloy elements is calculated; the first ion source is controlled to generate a first ion beam, the first carrying table is controlled to rotate, the target materials on all the subareas of the first carrying table circularly rotate to a first ion beam focusing area multiple times and are sputtered and deposited to the surface of a sample located on the second carrying table through the first ion beam, an alloy film is formed, and all the target materials correspond to alloy elements one to one; meanwhile, target material particles are blocked or allowed to be deposited on the surface of a sample in cooperation with a baffle, so that the total time of sputtering of each target material in the target area by the first ion beam is controlled to be the calculated sputtering time of the corresponding alloy element, and accurate regulation and control of the proportion of each alloy element in the alloy film are achieved; the content of impurity elements in the alloy film is reduced.

The invention provides a Hall thruster discharge chamber wall surface life estimation method, system and device and a medium, and the method comprises the steps: a preprocessing module which determines a to-be-estimated wall surface target position; the image recognition module is used for respectively acquiring color data of a wall background, a sediment sample and a wall target position after a discharge experiment and recording experiment time, the Hall thruster discharge experiment module is used for carrying out the discharge experiment on the wall target position, and the sedimentary layer depth analysis processing module is used for converting the color data into colored light three-primary-color data, estimating the depth of the sediment and recording the experiment time. And the wall surface life analysis and estimation module is used for obtaining a deposition rate and a sputtering rate in combination with the sediment depth and experimental time data, obtaining the shortest wall surface cutting time in combination with the wall thickness of the target position, and finally converting the shortest wall surface cutting time into wall surface life data. According to the method, the technical defects of an existing Hall thruster wall surface service life estimation method can be effectively overcome, and the actual requirement for rapid, accurate and low-cost estimation of the Hall thruster wall surface service life in the industry is met.

The invention discloses a preparation method for improving uniformity of a tubular PECVD (Plasma Enhanced Chemical Vapor Deposition) coating, and belongs to a preparation method in the technical field of solar cell coating. S2, temperature adjustment; s3, vacuum treatment; s4, reaction gas is introduced for the first time, the reaction gas NH3, the reaction gas N2O and the reaction gas SiH4 are introduced into the deposition pipe, deposition operation is carried out on the silicon wafer, the flow rate of the NH3 ranges from 4000 sccm to 15000 sccm, the flow rate of the SiH4 ranges from 900 sccm to 3000 sccm, the flow rate of the N2O ranges from 1000 sccm to 2000 sccm, and the deposition time ranges from 30 s to 1 min; s5, introducing reaction gas for the second time; s6, introducing the reaction gas for the third time; s7, pressure returning of the deposition pipe is conducted, and nitrogen charging and pressure returning operation is conducted on the deposition pipe obtained after S6 is completed; s8, discharging the graphite boat, namely discharging the graphite boat after the step S7 from the deposition pipe to complete the deposition operation; according to the preparation method for improving the uniformity of the tubular PECVD coating film, the chemical activity of the tubular PECVD coating film is improved, so that the formation of a thin film is accelerated, the deposition rate is high, the quality of the thin film is stable, and various substrates can be treated at the same time.

An electroplating system including a Cu bath disposed within a vessel, the Cu bath characterized by a predetermined threshold of Cu concentration, and a predetermined threshold of acid concentration, and where a substrate is submerged in the Cu bath; and a jet array configured to spray a fluid onto the substrate, where the fluid has a same composition as the Cu bath. Further, a method including spraying a fluid onto a substrate with the jet array, wherein the fluid has a same composition as the Cu bath and where spraying the substrate increases a deposition rate of a deposited Cu onto the substrate, where the predetermined threshold of acid concentration increases a bath conductivity of the Cu bath, and where the increased bath conductivity improves a coplanarity of deposited copper structure.

The application discloses a heat pipe condensing section anti-particle deposition system and relates to the fields of energy sources including nuclear energy and mechanical equipment, and solves the technical problem of particle deposition in a heat pipe and influence on heat exchange efficiency, and the technical scheme is as follows: the main part of the heat pipe is a condensing section, further comprising an evaporating section and an adiabatic section between the condensing section and the evaporating section; a wick is arranged in the pipe body, and a working medium is filled and circulated in the pipe body. A special structure is designed on the inner and outer surfaces of the condensing section, the flow rate of the fluid can be changed, the fluid is disturbed, the fine particles in the fluid collide, the deposition rate of the fine particles is reduced, and the heat transfer outside the pipe is enhanced. The application is suitable for heat pipe systems related to energy sources including mobile small reactors, and can be widely applied to the fields of space, deep sea, medical emergency energy and the like.

The invention provides a feature analysis method and system for an additive manufacturing process based on deep learning, and can be applied to the technical field of additive manufacturing. According to the method, after the to-be-analyzed image including the macroscopic molten pool image and the macroscopic metallographic image or the microstructure image of the cross section of the deposition sample is obtained, the to-be-analyzed image is segmented through the preset segmentation model to obtain the molten pool area image, the deposition layer contour image or the secondary phase image of the microstructure; then, the deposition layer dilution rate, the additive manufacturing effective deposition rate or the microstructure secondary phase content in the additive manufacturing process are obtained through calculation according to the target area image, and therefore the problems that when the dilution rate, the effective deposition rate and the microstructure secondary phase content are calculated, parameters are sensitive, manual work is depended, precision is low, and efficiency is poor can be effectively solved; and the evaluation accuracy of the component precision, the forming quality and the microstructure evolution in the functionally graded material additive manufacturing process is improved.

The present application relates to the technical field of coating, and particularly provides a diamond deposition device, wherein a deposition chamber is arranged in the deposition device, and the deposition device further comprises a magnetic control unit, which is used for generating a variable magnetic field in the deposition chamber, and the magnetic field controls the ion trajectory in the deposition chamber when changing, so that the ion trajectory is directed to bombard the substrate surface of a workpiece; the present application cooperatively regulates the magnetic field distribution through multiple groups of coils, drives the carbon ions to direct bombard the substrate surface, effectively improves the deposition rate of the diamond film and the uniformity of the film distribution, and improves the quality of the diamond coating.

The invention relates to the technical field of additive manufacturing, and discloses an ultrasonic-assisted double-wire consumable electrode-non-consumable electrode electric arc additive manufacturing device and method. In the device, two non-consumable electrode welding guns are fixed through a welding gun clamping mechanism; the wire fixing mechanism is connected with the welding guns and fixes the double wires, the double wires are connected with the positive electrodes of the two welding power sources respectively, the non-consumable electrode welding guns are connected with the negative electrodes of the welding power sources respectively, electric arcs burn between the two sets of non-consumable electrodes and the wires, and the wires are melted to form molten drops for deposition. The ultrasonic probe is fixed by the ultrasonic head fixing mechanism and arranged on the side face of the deposition layer to emit ultrasonic waves, the ultrasonic head fixing mechanism is rigidly connected with the welding gun clamping mechanism and moves along with the height of the deposition layer, ultrasonic vibration promotes wetting and spreading of molten drops, and meanwhile grains are refined. According to the method, the structure is simple, electric arc additive manufacturing heat accumulation is remarkably reduced, the deposition rate is multiplied, meanwhile, the microstructure is remarkably improved, the mechanical property of the component is improved, and efficient, high-quality and low-cost manufacturing of the large component is achieved.

This invention discloses a method for preparing epitaxial stress-controlled polarized metals, belonging to the field of functional oxide thin film preparation. The method includes: performing a special high-temperature annealing pretreatment on a YAlO3(111) substrate; calibrating the pulsed laser deposition rate and using a moving mask technique to prepare a wedge-shaped thin film with continuously varying thickness; and precisely controlling key process parameter windows such as growth temperature, laser energy density, oxygen partial pressure, and the distance between the target and the substrate. This invention obtains an ideal nucleation template by optimizing the substrate pretreatment process, achieves linear modulation of the thickness gradient by precisely controlling the matching of the mask moving speed and deposition rate, and obtains a high-quality polarized metal thin film with a room temperature resistivity as low as 173 μΩ·cm and stability across the entire temperature range by systematically optimizing key process parameters. This method has the advantages of high repeatability, high control precision, and wide applicability, and can be extended to the preparation of other perovskite oxide thin films, showing broad application prospects in the field of polarized electronic devices.