103 results about "Dangling bond" patented technology

The invention relates to an electron source, a preparation method of the electron source, an electron gun and application of the electron source. The electron source comprises an optical fiber and an electron emission layer, the optical fiber comprises a fiber core used for transmitting laser and a wrapping layer wrapping the fiber core, and the end face of the light outlet end of the optical fiber and the extending direction of the fiber core are arranged at an angle. The electron emission layer is arranged on the end face of the light emitting end of the optical fiber, and the electron emission layer at least comprises an electron excitation layer covering the fiber core. The electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material. Low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials are adopted as materials of the electron excitation layer, the low-dimensional materials have the atomic-scale thickness, back-incident electrons can be emitted without in-vivo transmission, and the electron emission efficiency is high; and the low-dimensional material has the characteristics of no dangling bond, stable property, high melting point, difficulty in damage, good stability, long service life and the like.

Disclosed an inertial sensor packaging method and an inertial sensor, the inertial sensor packaging method comprises: steps: breaking the Si—O bond of at least one of the first dielectric part in the first bonding surface in the MEMS wafer and the second dielectric part in the second bonding surface in the cover wafer; aligning the first bonding surface with the second bonding surface and attaching thereof together, so that the first dielectric part and the second dielectric part are pre-bonded through a dangling bond to obtain a pre-bonded wafer; performing heat treatment on the pre-bonded wafer to achieve permanent bonding between the first dielectric part and the second dielectric part, as well as between the first metal part and the second metal part.

The invention discloses a silicon carbide crystal growth method, which relates to the technical field of silicon carbide growth, and comprises the following steps: S1, immersing a silicon carbide seed crystal into an ultrasonic treatment tank filled with a mixed solution; s2, activating treatment of a thiofluorinated precursor: performing amino functionalization on the surface of the treated seed crystal through an amino silane solution, and then pre-activating a surface dangling bond in argon / hydrogen mixed plasma; s3, pulse modulation SF6 plasma gradient film forming: a double-frequency plasma source is adopted, and gradient passivation films with Si-F bonds as inner layers and Si-S bonds as outer layers are generated layer by layer through pulse modulation of power and air pressure in a dynamically adjusted SF6 / Ar mixed atmosphere; s4, performing boron doping reinforcement on the sulfur-fluorine passivation layer; and S5, packaging and protecting the graphene quantum dots. According to the process, multi-stage cooperative treatment is adopted, a multi-layer protection system is formed, the comprehensive performance of the passivation layer is remarkably improved, and the balance of high-temperature stability and oxygen barrier is achieved.

The invention provides a method for improving metal-semiconductor contact based on a silane coupling agent and application. The method comprises the steps that a semiconductor device is provided, the semiconductor device comprises a metal-semiconductor contact structure, the metal-semiconductor contact structure is Schottky contact, and a semiconductor material, in contact with a metal material, contained in the metal-semiconductor contact structure comprises a two-dimensional semiconductor material with hydroxyl on the surface; the semiconductor device is in contact with a silane coupling agent solution, so that the silane coupling agent reacts with hydroxyl on the surface of the two-dimensional semiconductor material, a molecular passivation layer is formed on the surface of the two-dimensional semiconductor material, and Schottky contact is converted into ohmic contact. According to the method provided by the invention, the molecular passivation layer is constructed on the surface of the two-dimensional semiconductor material by adopting the silane coupling agent, so that a surface dangling bond and an interface state in the metal-semiconductor contact structure are effectively eliminated, the metal-semiconductor contact structure is converted from Schottky contact to ohmic contact, and the stability and the reliability of a semiconductor device are improved.

The invention provides a semiconductor structure and a forming method thereof, and relates to the technical field of semiconductors. The semiconductor structure comprises a substrate; the laminated structure comprises a plurality of storage units arranged at intervals in the first direction, each storage unit comprises an active layer, a gate layer arranged on the active layer in the first direction and a liner layer arranged between the active layer and the gate layer, and the active layer comprises a first source-drain region, a channel region and a second source-drain region which are sequentially connected in the second direction. The orthographic projection of the liner layer on the surface of the substrate at least covers the orthographic projection of the channel region on the surface of the substrate; the two-dimensional material layer is arranged between the liner layer and the active layer, and the two-dimensional material layer at least covers the surface of the channel region. According to the structure, the two-dimensional material layer is arranged on the active layer, dangling bonds on the surface of the active layer can be reduced through the two-dimensional material layer, carrier scattering is reduced, and therefore the performance of the device is improved.

The invention relates to the field of semiconductor materials, and discloses an amorphous HFO2Si interface modification method, equipment and a medium, and the method comprises the following steps: building an amorphous HFO2Si interface; analyzing the interface key strength and electron gain and loss information of the building structure through the plane average differential charge density; a first position, a second position and a third position are selected on a built structure interface, three O vacancy defects of VO1, VO2 and VO3 are introduced, and the three different O vacancies form different bonds on the interface; analyzing the influence of the defect zones with three different defect structures on the electrical properties of the semiconductor material, and selecting the O vacancy defect at the introduction position with better influence; introducing H to passivate dangling bonds at O vacancy defects at introduction positions with relatively good influence to obtain a structure Vop; according to the invention, interface defects can be effectively reduced, the electron transmission efficiency is improved, and the stability of the device is remarkably improved.

The present application relates to a manufacturing method of a high-k metal gate device, and relates to the field of integrated circuits. The manufacturing method includes: providing a substrate, the substrate including an active region and an isolation structure, the isolation structure and the active region being disposed at intervals; the substrate having a first region and a second region, the active region protruding from the isolation structure to form a first fin portion in the first region and a second fin portion in the second region; forming a first work function layer covering the first fin portion and the second fin portion; removing dangling bonds free on the surface of the first work function layer by contacting the surface of the first work function layer with free radicals generated by exciting a first gas with metastable particles; forming a second work function layer on the first work function layer; etching and removing the second work function layer on the first fin portion; treating the surface of the first work function layer with free radicals generated by exciting a second gas with metastable particles. To improve the problem of material loss of the first work function layer when devices with different threshold voltages are formed on the same substrate.

This invention discloses a TOPCon cell structure and its fabrication method, belonging to the field of photovoltaic technology. The TOPCon cell structure includes a boron-doped emitter, a first-phase Al2O3 amorphous layer, a second-phase γ-Al2O3 metastable layer, and a gradient composite film layer sequentially disposed on the surface of an N-type silicon substrate. In the TOPCon cell obtained by this invention, the first-phase Al2O3 amorphous state exhibits long-range disorder, non-periodic atomic arrangement, and contains numerous dangling bonds and structural defects. The second-phase γ-Al2O3 metastable state possesses high specific surface area and good thermal stability, enabling the synergistic formation of a high-density fixed negative charge. These charges effectively repel minority carriers, reducing surface recombination. The long-range disordered Al2O3 amorphous state and the partially ordered γ-Al2O3 form a metastable combination, which facilitates the formation of numerous dangling bonds at the alumina-silicon interface. These dangling bonds, with the assistance of hydrogen, effectively fix the negative charge, thereby achieving an extremely low surface recombination rate and exhibiting excellent passivation effects.

A method for forming a semiconductor structure includes: providing a substrate; forming an initial buried layer within the substrate, the initial buried layer containing doped ions; and annealing the initial buried layer to form a buried layer, wherein the annealing gas includes an inert gas and hydrogen, or an inert gas and a hydrogen isotope gas. Since the annealing gas does not contain oxygen, it does not cause excessive consumption of the initial buried layer, thus preventing significant surface depressions. Furthermore, silicon substrates have dangling bonds on their surface; hydrogen annealing allows hydrogen atoms to enter the silicon crystal and bind to these dangling bonds, thereby eliminating interface states. Compared to elemental hydrogen, hydrogen isotopes have higher bond energies with silicon, making them less prone to breakage and thus better eliminating interface states. Moreover, high-temperature hydrogen or hydrogen isotope gas annealing can also eliminate surface and internal voids and defects in the substrate, improving surface roughness.

The present invention provides a phase shifter that can be manufactured using a CMOS process, exhibits low optical propagation loss, can maintain refractive index changes without power supply, and allows for the resetting of those refractive index changes. [Solution] The phase shifter 100 of the present invention comprises an optical waveguide 101 composed of a core 105 and a cladding 106 surrounding the core 105, a substrate 102 on which the optical waveguide 101 is mounted, a heating means 103 for heating the core 105, and an ultraviolet irradiation means 104 for irradiating the core 105 with ultraviolet U, wherein the core 105 mainly contains silicon nitride, and the density of silicon dangling bonds of silicon nitride is 10 in terms of spin density 18 cm -3 The above 10 20 cm -3 The following applies:

The application belongs to the technical field of display, and particularly relates to an IGZO thin film transistor based on gradient gallium doping and hydrogen plasma treatment and a preparation method thereof. The application adopts ALD technology to construct a three-section linear gradient Ga-doped active layer, the bottom low Ga area ensures efficient carrier transport, the migration rate can reach 58.7 cm 2 Vs, the top high Ga area uses the high electronegativity of Ga-O bond and the wide band gap characteristics to inhibit the back channel defects, the Delta Vth under NBITS test is as low as 2.2 V, and the stability is improved by more than 5 times compared with the undoped device. In-situ hydrogen / oxygen plasma composite treatment is carried out in the ALD chamber, the saturation dangling bond is compensated, the interface state density is controlled to be ≤10 12 cm ‑2 eV ‑1 , and the sub-threshold swing is optimized. Periodic pauses are introduced in the active layer deposition, the film surface roughness is ≤0.5 nm; a two-step method is used for contact hole etching, and the top high Ga layer is ≥5 nm. The comprehensive performance meets the high-end application requirements such as high-resolution display and flexible display, and the application value and market competitiveness are remarkable.

The present invention relates to a micro light-emitting element, which includes an epitaxial crystal grain grown by natural epitaxy without etching. Since the epitaxial crystal grain is grown by natural epitaxy, the roughness of at least a part of the sidewall surface is less than or equal to 10 nm, or the defect density is less than 10<supgt;8< / supgt> / cm<supgt;2< / supgt>, or the flatness error value is greater than 0.1 times the thickness of the epitaxial crystal grain. Therefore, the sidewall surface of the micro epitaxial crystal grain of the present invention is not damaged by etching, which can greatly reduce the generation of dangling bonds and reduce the sidewall damage effect, avoiding serious attenuation of the peak external quantum efficiency caused by the sidewall damage effect after the miniaturization of the light-emitting element.

The invention discloses a photovoltaic cell, a photovoltaic module and a processing method of the photovoltaic cell, the surface of the photovoltaic cell is provided with an antireflection layer, and the antireflection layer has a saturated bond; when the anti-reflection layer on the surface of the photovoltaic cell is characterized by adopting a Raman scattering spectrum analysis test, a Raman spectrum chart obtained by the anti-reflection layer has a characteristic peak A, and the ratio range of the peak intensity of the characteristic peak A to the half-peak width is 1-25. According to the photovoltaic cell, a Raman spectrum chart in the antireflection layer has a characteristic peak A at the position, the ratio range of peak intensity to half-peak width is 1-25, the characteristic peak A is relatively sharp, intermolecular acting force in a molecular structure of the characteristic peak A is high, chemical bonds are not prone to breakage, and therefore the characteristic peak A at the position is the characteristic peak corresponding to a saturated bond; therefore, a large number of saturated bonds exist in the antireflection layer, and only a small number of unsaturated bonds or dangling bonds exist in the antireflection layer, so that the stability and passivation effect of the antireflection layer are ensured, and the photovoltaic cell is further ensured to have relatively good power generation efficiency.

The invention provides a direct bonding method based on laser surface activation and repair. The direct bonding method comprises the steps of wafer cleaning, high-energy laser processing, low-energy laser processing and wafer bonding. According to the method, atoms on a wafer bonding interface are activated by using high-energy laser, diffusion of the atoms is promoted, surface dangling bonds are opened, and favorable conditions are created for the subsequent bonding process. Then, a low-energy laser is used to repair an amorphized or lattice damaged layer of the bonding interface. The invention provides a bonding method which can be carried out at room temperature and can realize lattice repair while activating. According to the method, additional annealing treatment is not needed, laser treatment only acts on the surface of the wafer, meanwhile, the specific rapid temperature rising and falling characteristic of laser processing is fully utilized, the influence on the wafer is strictly limited to the extremely shallow surface layer of the wafer, the overall thermal budget is reduced, meanwhile, thermal damage to the wafer body is avoided, and the wafer quality is improved. The method is especially suitable for high-quality bonding preparation of heat-sensitive devices. Besides, the method has excellent compatibility, and can be combined with the prior art of plasma activation, surface activation bonding and the like to improve the flexibility of the bonding process and the product quality.

The application discloses a power device and a preparation method thereof and electronic equipment, and relates to the technical field of electronic components. The power device comprises a semiconductor substrate and a two-dimensional metal material layer on the surface of the semiconductor substrate. In the application, the two-dimensional metal material layer is in contact with the semiconductor substrate to form an electrode contact. Since the two-dimensional layered metal material forming the two-dimensional metal material layer has an atomically flat surface without dangling bonds, the two-dimensional layered metal material can provide a uniform and low-wrinkle surface for the interface between the metal and the semiconductor substrate, which is beneficial to improving the contact quality, reducing the influence of the rough surface of the semiconductor substrate, improving the transport efficiency of the carriers, and further improving the performance of the semiconductor power device.

The invention provides a quantum dot patterning preparation method based on a corner two-dimensional material, and relates to the technical field of quantum dot growth. The method comprises the following steps: preparing two-dimensional materials with Van der Waals layered structures on at least two substrates respectively; detecting the crystal orientation of each two-dimensional material, and under the condition of determining that the crystal orientations of at least two two-dimensional materials are consistent, taking one two-dimensional material as a reference, and superposing the other two-dimensional material on the two-dimensional material as the reference at a preset corner to generate a corner two-dimensional material Moire superlattice; the corner two-dimensional material Moire superlattice serves as an epitaxial substrate, a quantum dot material grows in a Van der Waals epitaxy mode, and the growth face of the epitaxial substrate represents the Van der Waals surface, without dangling bonds, of the corner two-dimensional material Moire superlattice; and based on the periodic surface potential of the Moire superlattice of the corner two-dimensional material, controlling the quantum dots to be periodically arranged on the growth surface of the epitaxial substrate, and finally preparing a regular quantum dot array structure.

The invention provides a wafer bonding structure and a forming method thereof, and the method comprises the steps: providing a first wafer structure which comprises a first wafer and a first bonding layer; doping ion implantation is carried out on the surface of the first bonding layer, so that a second bonding layer is formed on the surface of the first bonding layer; performing hydrogen ion implantation on the surface of the second bonding layer to form a hydrogen ion layer on the surface of the second bonding layer; performing plasma bombardment on the hydrogen ion layer and the second bonding layer so as to form dangling bonds of the doped ions in the hydrogen ion layer and the second bonding layer; providing a hydroxyl source, and enabling the surface of the dangling bond to adsorb hydroxyl; aligning the hydrogen ion layers in the two first wafer structures, and performing pre-bonding; and carrying out second annealing treatment to realize bonding of the two first wafer structures. According to the bonding method, the bonding strength is improved.

The invention discloses a laser crystal bonding method based on excimer laser surface activation, and belongs to the technical field of laser crystal surface modification and bonding. The activation method comprises the following steps: carrying out precise polishing and cleaning treatment on the surface of a laser crystal to be bonded; and carrying out irradiation activation treatment on the treated crystal surface by adopting excimer laser. The bonding method comprises the following steps of: activating the surfaces of the crystals by adopting the activating method, and laminating the surfaces of the two crystals subjected to activating treatment at room temperature to form an initial optical cement interface; and carrying out heat treatment annealing on the crystal assembly subjected to optical cement. High-energy ultraviolet photons of short-wavelength excimer laser are utilized to initiate surface chemical bond breakage, high-activity sites such as dangling bonds are formed, and the surface energy and the surface activity of the crystal are remarkably improved. The method does not need to introduce a chemical reagent, is small in heat influence, remarkably improves the bonding strength after activation, and is suitable for large-size crystal treatment.

The invention discloses a method for improving efficiency of PE-back film substrate surface ammonia ionization pretreatment, and relates to the technical field of back film silicon nitride deposition. Aiming at the problems of high Si-H bond dangling bond defect on the surface of a silicon wafer, insufficient nitrogen content of a nitride interface, large refractive index fluctuation of a silicon nitride film and the like existing in the conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) method for preparing back film silicon nitride, NH3 plasma pretreatment is carried out on the surface of SiOx / poly-Si; by means of implantation of active nitrogen free radicals, Si dangling bond defects are repaired in situ, a transition layer is formed, the synergistic effect of stress matching is enhanced, and the passivation performance is improved. The specific process comprises the steps of boat entering, constant-temperature heating, vacuumizing, leak detection, ammonia gas pretreatment (10000-flow ammonia gas is introduced, a radio-frequency power supply discharges 10000 W, the pressure is 1800 mtorr, and the time is 200 s), silicon nitride coating and the like. Experiments show that by means of the method, the efficiency can be improved by 0.10% or above, the yield is not affected, coating particle impurity abnormity can be reduced, and the EL yield is improved.

A semiconductor structure includes: a semiconductor material layer; a metal material layer; and an ultrathin film layer formed at the interface between the semiconductor material layer and the metal material layer, comprising amorphous fluorinated carbon having a dielectric constant of at least 10. The amorphous fluorinated carbon film further includes hydrogen trapped in dangling bonds in the amorphous carbon film.

A method for fabricating a vertical Schottky diode with ultra-small size, comprising: mechanically peeling off an organic adhesive layer including a bottom electrode from a sacrificial substrate and inverting it to form the bottom electrode; transferring a thin two-dimensional semiconductor material with no dangling bonds and atomically flat onto the bottom electrode; mechanically peeling off an organic adhesive layer including a top electrode from the sacrificial substrate and transferring and laminating it onto the thin two-dimensional semiconductor material with no dangling bonds and atomically flat, releasing the organic flexible adhesive layer and the top electrode, wherein the work functions of the top electrode and the bottom electrode are different, and an ohmic contact and a Schottky contact are respectively formed with the thin two-dimensional semiconductor material. The present invention miniaturizes the size limit of the vertical Schottky diode device to the atomic thickness, providing an important way for realizing integrated devices and circuits with large current density, low power consumption and high-frequency switching speed.

The application provides a solar cell and a preparation method thereof. The method comprises the following steps: providing a substrate. The substrate has a light-receiving surface and a back surface. A first passivation layer is formed on the light-receiving surface of the substrate. The first passivation layer is used for oxygen passivation of the light-receiving surface of the substrate. A second passivation layer is formed on the side of the first passivation layer away from the substrate. The second passivation layer comprises doped amorphous oxygen-doped silicon nitride, and the doping type of the second passivation layer is the same as the doping type of the substrate. The preparation temperature of the first passivation layer and the second passivation layer is lower than the crystallization temperature of amorphous silicon. An anti-reflection layer is formed on the side of the second passivation layer away from the first passivation layer. The anti-reflection layer can reduce the decrease of passivation performance caused by bond breakage and the occurrence of ultraviolet-induced decay phenomenon. The second passivation layer can also maintain a relatively stable passivation effect under different working conditions, provide continuous and stable performance support for field passivation, and further reduce the formation of surface dangling bonds and improve the passivation performance.

The invention relates to an electron source, a preparation method of the electron source, an electron gun and application of the electron source. The electron source includes an optical fiber and an electron emission layer. The optical fiber comprises a fiber core used for transmitting laser and a wrapping layer wrapping the fiber core. A light leakage notch is formed in the light outlet end of the optical fiber along the radial direction of the optical fiber; the electron emission layer is arranged on the bottom wall surface of the light leakage gap, the electron emission layer at least comprises an electron excitation layer, the bottom wall surface of the light leakage gap is constructed to be a plane, and the projection of the electron excitation layer on the bottom wall surface covers the projection of the fiber core on the bottom wall surface. Low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials are adopted as materials of the electron excitation layer, the low-dimensional materials have the atomic-scale thickness, excited electrons can be emitted without in-vivo transmission, and the electron emission efficiency is high; and the low-dimensional material has the characteristics of no dangling bond, stable property, high melting point, difficulty in damage, good stability, long service life and the like.

The invention discloses a wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector and a preparation method thereof, the wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, gold nanoparticles are deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a double-four-quadrant photoelectric detector, and the thickness of the double-four-quadrant photoelectric detector is larger than that of the micro-nano conical B-Si structure. And the boundary area of the double four quadrants is electrically isolated by etching deep grooves and filling oxygen-silicon compounds to form isolation grooves. The gold nanoparticles are compounded on the surface of B-Si, hot electrons can be excited through a localized surface plasma resonance mechanism and injected into a black silicon conduction band to participate in the photoelectric conversion process, the band gap limitation of the B-Si material is broken through, wide spectral response is achieved, the response capability in a near-infrared region is improved, and the photoelectric conversion efficiency is improved. And meanwhile, a silicon oxide and silicon nitride passivation film is introduced to the surface of the black silicon and gold nanoparticle composite structure, and a surface carrier recombination process is inhibited by filling dangling bonds and defect states on the surface of the black silicon pointed cone structure, so that the dark current level of the device is reduced.

The invention relates to a metal interconnection layer and a preparation method thereof. The preparation method comprises the following steps: providing a substrate; the dielectric laminations and the initial metal wires are alternately arranged on the substrate along a first direction parallel to the first surface; the side wall of the initial metal wire comprises a protruding part, and the protruding part is embedded in the dielectric lamination layer along the first direction; etching the dielectric laminated layer, forming a groove between the adjacent initial metal wires, and then forming a liner oxide layer covering the inner surface of the groove and the top surfaces of the initial metal wires; the bottom face of the groove is lower than the bottom face of the protruding part. Performing a surface treatment process on the exposed surface of the liner oxide layer, and at least adding a target dangling bond for increasing the coating rate on the inner surface of the groove not lower than the convex part; after an oxide layer is formed in the groove, removing the rest of the film layer with the top surface higher than the top surface of the protruding part to obtain a target metal wire; an air gap structure is arranged in the oxide layer. The technological process of the air gap structure in the metal interconnection layer can be simplified.

The present disclosure relates to semiconductor devices and manufacturing methods. A semiconductor device and a method of manufacturing a semiconductor device are provided. In an embodiment, a passivation process is used to reduce dangling bonds and defects in a work function layer within a gate stack. The passivation process introduces a passivation element that will react with the dangling bonds to passivate the dangling bonds. Additionally, in some embodiments, the passivation element will trap other elements and reduce or prevent their diffusion into other parts of the structure.

The invention relates to a silicon carbide wafer with improved surface crystallization quality and application, and belongs to the technical field of silicon carbide wafer surface treatment. According to the scheme, the silicon surface of the silicon carbide wafer is processed through the hydrogen-oxygen plasmas in a certain proportion, dangling bonds are broken through plasma processing, stress is effectively released through temperature control, the problem that the wafer surface crystallization quality is poor due to the dangling bonds is effectively solved, and when the epitaxial layer grows on the processed wafer, the wafer surface quality is improved. And the lattice adaptability of the epitaxial layer and the wafer is better, so that the quality of the epitaxial layer is better. The IF1 value and the IF2 value of the treated silicon carbide wafer are increased, the curvature change is smaller than or equal to 1%, the unit cell volume change rate is smaller than or equal to 0.01%, the damage to the surface is small in the treatment process, the surface of the wafer is not prone to being damaged, and dislocation slippage is not prone to being caused.

Semiconductor devices and corresponding manufacturing methods are disclosed. The method includes: forming a first layer on a first substrate; treating the first layer with a nitrogen-based plasma to form a first type of dangling bond; treating the first layer with an oxygen-based plasma to convert the first type of dangling bonds to a second type of dangling bonds; and treating the first layer with water to convert the second type of dangling bond to a third type of dangling bond.

The invention discloses an HEMT (High Electron Mobility Transistor) chip preparation method and system, and the method comprises the steps: carrying out the longitudinal etching on an epitaxial layer on an epitaxial wafer based on a first etching method, forming a plurality of physical isolation grooves, and dividing the epitaxial layer into a tube core array comprising a plurality of independent tube core units through the physical isolation grooves; for any tube core unit, epitaxially etching a step-shaped structure on the side surface of the tube core unit based on a second etching method; and bombarding the surface of the step-shaped structure by adopting ion current with strong electronegativity, so that active plasma in the ion current is combined with dangling bonds on the surface of the step-shaped structure to form a bonding layer so as to passivate the surface of the step-shaped structure. According to the method, the stable chemical bonding layer is formed, dangling bonds on the external delay surface are directly neutralized, surface state trapped charges are reduced, an electron migration path is blocked, and leakage current is greatly reduced; in addition, based on the formed bonding layer, the electric field distribution on the surface of the stepped structure can be effectively optimized, so that the breakdown voltage is improved.

The invention relates to a method for processing a probe direct-writing atomic layer on the surface of an FCC (fluid catalytic cracking) crystal material, and relates to the technical field of ultra-precision manufacturing, the processing method comprises the following steps: selecting a scanning probe as a processing tool; and carrying out scribing processing from the position of the FCC crystal material with the dangling bond to the direction without the dangling bond according to a preset processing track. According to the probe direct-writing atomic layer processing method provided by the invention, the processing application range of the scanning probe can be widened to a blocky FCC crystal material, and the limitation that only a silicon dioxide tip can be utilized to remove a two-dimensional material in a traditional scanning probe processing method is solved; atomic-scale precision manufacturing of the ionic crystal material of the face-centered cubic structure can be achieved, and the application range of the scanning probe machining method is widened. Meanwhile, the application material range of the scanning probe can be widened, and besides active materials such as silicon and silicon oxide, inert materials can also be adopted, so that the selection range of machining tool materials is widened.