83 results about "Dangling bond" patented technology

Disclosed an inertial sensor packaging method and an inertial sensor, the inertial sensor packaging method comprises: steps: breaking the Si—O bond of at least one of the first dielectric part in the first bonding surface in the MEMS wafer and the second dielectric part in the second bonding surface in the cover wafer; aligning the first bonding surface with the second bonding surface and attaching thereof together, so that the first dielectric part and the second dielectric part are pre-bonded through a dangling bond to obtain a pre-bonded wafer; performing heat treatment on the pre-bonded wafer to achieve permanent bonding between the first dielectric part and the second dielectric part, as well as between the first metal part and the second metal part.

The invention provides a method for improving metal-semiconductor contact based on a silane coupling agent and application. The method comprises the steps that a semiconductor device is provided, the semiconductor device comprises a metal-semiconductor contact structure, the metal-semiconductor contact structure is Schottky contact, and a semiconductor material, in contact with a metal material, contained in the metal-semiconductor contact structure comprises a two-dimensional semiconductor material with hydroxyl on the surface; the semiconductor device is in contact with a silane coupling agent solution, so that the silane coupling agent reacts with hydroxyl on the surface of the two-dimensional semiconductor material, a molecular passivation layer is formed on the surface of the two-dimensional semiconductor material, and Schottky contact is converted into ohmic contact. According to the method provided by the invention, the molecular passivation layer is constructed on the surface of the two-dimensional semiconductor material by adopting the silane coupling agent, so that a surface dangling bond and an interface state in the metal-semiconductor contact structure are effectively eliminated, the metal-semiconductor contact structure is converted from Schottky contact to ohmic contact, and the stability and the reliability of a semiconductor device are improved.

The invention provides a semiconductor structure and a forming method thereof, and relates to the technical field of semiconductors. The semiconductor structure comprises a substrate; the laminated structure comprises a plurality of storage units arranged at intervals in the first direction, each storage unit comprises an active layer, a gate layer arranged on the active layer in the first direction and a liner layer arranged between the active layer and the gate layer, and the active layer comprises a first source-drain region, a channel region and a second source-drain region which are sequentially connected in the second direction. The orthographic projection of the liner layer on the surface of the substrate at least covers the orthographic projection of the channel region on the surface of the substrate; the two-dimensional material layer is arranged between the liner layer and the active layer, and the two-dimensional material layer at least covers the surface of the channel region. According to the structure, the two-dimensional material layer is arranged on the active layer, dangling bonds on the surface of the active layer can be reduced through the two-dimensional material layer, carrier scattering is reduced, and therefore the performance of the device is improved.

This invention discloses a TOPCon cell structure and its fabrication method, belonging to the field of photovoltaic technology. The TOPCon cell structure includes a boron-doped emitter, a first-phase Al2O3 amorphous layer, a second-phase γ-Al2O3 metastable layer, and a gradient composite film layer sequentially disposed on the surface of an N-type silicon substrate. In the TOPCon cell obtained by this invention, the first-phase Al2O3 amorphous state exhibits long-range disorder, non-periodic atomic arrangement, and contains numerous dangling bonds and structural defects. The second-phase γ-Al2O3 metastable state possesses high specific surface area and good thermal stability, enabling the synergistic formation of a high-density fixed negative charge. These charges effectively repel minority carriers, reducing surface recombination. The long-range disordered Al2O3 amorphous state and the partially ordered γ-Al2O3 form a metastable combination, which facilitates the formation of numerous dangling bonds at the alumina-silicon interface. These dangling bonds, with the assistance of hydrogen, effectively fix the negative charge, thereby achieving an extremely low surface recombination rate and exhibiting excellent passivation effects.

A method for forming a semiconductor structure includes: providing a substrate; forming an initial buried layer within the substrate, the initial buried layer containing doped ions; and annealing the initial buried layer to form a buried layer, wherein the annealing gas includes an inert gas and hydrogen, or an inert gas and a hydrogen isotope gas. Since the annealing gas does not contain oxygen, it does not cause excessive consumption of the initial buried layer, thus preventing significant surface depressions. Furthermore, silicon substrates have dangling bonds on their surface; hydrogen annealing allows hydrogen atoms to enter the silicon crystal and bind to these dangling bonds, thereby eliminating interface states. Compared to elemental hydrogen, hydrogen isotopes have higher bond energies with silicon, making them less prone to breakage and thus better eliminating interface states. Moreover, high-temperature hydrogen or hydrogen isotope gas annealing can also eliminate surface and internal voids and defects in the substrate, improving surface roughness.

The present invention provides a phase shifter that can be manufactured using a CMOS process, exhibits low optical propagation loss, can maintain refractive index changes without power supply, and allows for the resetting of those refractive index changes. [Solution] The phase shifter 100 of the present invention comprises an optical waveguide 101 composed of a core 105 and a cladding 106 surrounding the core 105, a substrate 102 on which the optical waveguide 101 is mounted, a heating means 103 for heating the core 105, and an ultraviolet irradiation means 104 for irradiating the core 105 with ultraviolet U, wherein the core 105 mainly contains silicon nitride, and the density of silicon dangling bonds of silicon nitride is 10 in terms of spin density 18 cm -3 The above 10 20 cm -3 The following applies:

The application belongs to the technical field of display, and particularly relates to an IGZO thin film transistor based on gradient gallium doping and hydrogen plasma treatment and a preparation method thereof. The application adopts ALD technology to construct a three-section linear gradient Ga-doped active layer, the bottom low Ga area ensures efficient carrier transport, the migration rate can reach 58.7 cm 2 Vs, the top high Ga area uses the high electronegativity of Ga-O bond and the wide band gap characteristics to inhibit the back channel defects, the Delta Vth under NBITS test is as low as 2.2 V, and the stability is improved by more than 5 times compared with the undoped device. In-situ hydrogen / oxygen plasma composite treatment is carried out in the ALD chamber, the saturation dangling bond is compensated, the interface state density is controlled to be ≤10 12 cm ‑2 eV ‑1 , and the sub-threshold swing is optimized. Periodic pauses are introduced in the active layer deposition, the film surface roughness is ≤0.5 nm; a two-step method is used for contact hole etching, and the top high Ga layer is ≥5 nm. The comprehensive performance meets the high-end application requirements such as high-resolution display and flexible display, and the application value and market competitiveness are remarkable.

The invention discloses a photovoltaic cell, a photovoltaic module and a processing method of the photovoltaic cell, the surface of the photovoltaic cell is provided with an antireflection layer, and the antireflection layer has a saturated bond; when the anti-reflection layer on the surface of the photovoltaic cell is characterized by adopting a Raman scattering spectrum analysis test, a Raman spectrum chart obtained by the anti-reflection layer has a characteristic peak A, and the ratio range of the peak intensity of the characteristic peak A to the half-peak width is 1-25. According to the photovoltaic cell, a Raman spectrum chart in the antireflection layer has a characteristic peak A at the position, the ratio range of peak intensity to half-peak width is 1-25, the characteristic peak A is relatively sharp, intermolecular acting force in a molecular structure of the characteristic peak A is high, chemical bonds are not prone to breakage, and therefore the characteristic peak A at the position is the characteristic peak corresponding to a saturated bond; therefore, a large number of saturated bonds exist in the antireflection layer, and only a small number of unsaturated bonds or dangling bonds exist in the antireflection layer, so that the stability and passivation effect of the antireflection layer are ensured, and the photovoltaic cell is further ensured to have relatively good power generation efficiency.

The invention provides a direct bonding method based on laser surface activation and repair. The direct bonding method comprises the steps of wafer cleaning, high-energy laser processing, low-energy laser processing and wafer bonding. According to the method, atoms on a wafer bonding interface are activated by using high-energy laser, diffusion of the atoms is promoted, surface dangling bonds are opened, and favorable conditions are created for the subsequent bonding process. Then, a low-energy laser is used to repair an amorphized or lattice damaged layer of the bonding interface. The invention provides a bonding method which can be carried out at room temperature and can realize lattice repair while activating. According to the method, additional annealing treatment is not needed, laser treatment only acts on the surface of the wafer, meanwhile, the specific rapid temperature rising and falling characteristic of laser processing is fully utilized, the influence on the wafer is strictly limited to the extremely shallow surface layer of the wafer, the overall thermal budget is reduced, meanwhile, thermal damage to the wafer body is avoided, and the wafer quality is improved. The method is especially suitable for high-quality bonding preparation of heat-sensitive devices. Besides, the method has excellent compatibility, and can be combined with the prior art of plasma activation, surface activation bonding and the like to improve the flexibility of the bonding process and the product quality.

The application discloses a power device and a preparation method thereof and electronic equipment, and relates to the technical field of electronic components. The power device comprises a semiconductor substrate and a two-dimensional metal material layer on the surface of the semiconductor substrate. In the application, the two-dimensional metal material layer is in contact with the semiconductor substrate to form an electrode contact. Since the two-dimensional layered metal material forming the two-dimensional metal material layer has an atomically flat surface without dangling bonds, the two-dimensional layered metal material can provide a uniform and low-wrinkle surface for the interface between the metal and the semiconductor substrate, which is beneficial to improving the contact quality, reducing the influence of the rough surface of the semiconductor substrate, improving the transport efficiency of the carriers, and further improving the performance of the semiconductor power device.

The invention provides a quantum dot patterning preparation method based on a corner two-dimensional material, and relates to the technical field of quantum dot growth. The method comprises the following steps: preparing two-dimensional materials with Van der Waals layered structures on at least two substrates respectively; detecting the crystal orientation of each two-dimensional material, and under the condition of determining that the crystal orientations of at least two two-dimensional materials are consistent, taking one two-dimensional material as a reference, and superposing the other two-dimensional material on the two-dimensional material as the reference at a preset corner to generate a corner two-dimensional material Moire superlattice; the corner two-dimensional material Moire superlattice serves as an epitaxial substrate, a quantum dot material grows in a Van der Waals epitaxy mode, and the growth face of the epitaxial substrate represents the Van der Waals surface, without dangling bonds, of the corner two-dimensional material Moire superlattice; and based on the periodic surface potential of the Moire superlattice of the corner two-dimensional material, controlling the quantum dots to be periodically arranged on the growth surface of the epitaxial substrate, and finally preparing a regular quantum dot array structure.

The invention provides a wafer bonding structure and a forming method thereof, and the method comprises the steps: providing a first wafer structure which comprises a first wafer and a first bonding layer; doping ion implantation is carried out on the surface of the first bonding layer, so that a second bonding layer is formed on the surface of the first bonding layer; performing hydrogen ion implantation on the surface of the second bonding layer to form a hydrogen ion layer on the surface of the second bonding layer; performing plasma bombardment on the hydrogen ion layer and the second bonding layer so as to form dangling bonds of the doped ions in the hydrogen ion layer and the second bonding layer; providing a hydroxyl source, and enabling the surface of the dangling bond to adsorb hydroxyl; aligning the hydrogen ion layers in the two first wafer structures, and performing pre-bonding; and carrying out second annealing treatment to realize bonding of the two first wafer structures. According to the bonding method, the bonding strength is improved.

The invention discloses a laser crystal bonding method based on excimer laser surface activation, and belongs to the technical field of laser crystal surface modification and bonding. The activation method comprises the following steps: carrying out precise polishing and cleaning treatment on the surface of a laser crystal to be bonded; and carrying out irradiation activation treatment on the treated crystal surface by adopting excimer laser. The bonding method comprises the following steps of: activating the surfaces of the crystals by adopting the activating method, and laminating the surfaces of the two crystals subjected to activating treatment at room temperature to form an initial optical cement interface; and carrying out heat treatment annealing on the crystal assembly subjected to optical cement. High-energy ultraviolet photons of short-wavelength excimer laser are utilized to initiate surface chemical bond breakage, high-activity sites such as dangling bonds are formed, and the surface energy and the surface activity of the crystal are remarkably improved. The method does not need to introduce a chemical reagent, is small in heat influence, remarkably improves the bonding strength after activation, and is suitable for large-size crystal treatment.

The invention discloses a method for improving efficiency of PE-back film substrate surface ammonia ionization pretreatment, and relates to the technical field of back film silicon nitride deposition. Aiming at the problems of high Si-H bond dangling bond defect on the surface of a silicon wafer, insufficient nitrogen content of a nitride interface, large refractive index fluctuation of a silicon nitride film and the like existing in the conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) method for preparing back film silicon nitride, NH3 plasma pretreatment is carried out on the surface of SiOx / poly-Si; by means of implantation of active nitrogen free radicals, Si dangling bond defects are repaired in situ, a transition layer is formed, the synergistic effect of stress matching is enhanced, and the passivation performance is improved. The specific process comprises the steps of boat entering, constant-temperature heating, vacuumizing, leak detection, ammonia gas pretreatment (10000-flow ammonia gas is introduced, a radio-frequency power supply discharges 10000 W, the pressure is 1800 mtorr, and the time is 200 s), silicon nitride coating and the like. Experiments show that by means of the method, the efficiency can be improved by 0.10% or above, the yield is not affected, coating particle impurity abnormity can be reduced, and the EL yield is improved.

A semiconductor structure includes: a semiconductor material layer; a metal material layer; and an ultrathin film layer formed at the interface between the semiconductor material layer and the metal material layer, comprising amorphous fluorinated carbon having a dielectric constant of at least 10. The amorphous fluorinated carbon film further includes hydrogen trapped in dangling bonds in the amorphous carbon film.

The application provides a solar cell and a preparation method thereof. The method comprises the following steps: providing a substrate. The substrate has a light-receiving surface and a back surface. A first passivation layer is formed on the light-receiving surface of the substrate. The first passivation layer is used for oxygen passivation of the light-receiving surface of the substrate. A second passivation layer is formed on the side of the first passivation layer away from the substrate. The second passivation layer comprises doped amorphous oxygen-doped silicon nitride, and the doping type of the second passivation layer is the same as the doping type of the substrate. The preparation temperature of the first passivation layer and the second passivation layer is lower than the crystallization temperature of amorphous silicon. An anti-reflection layer is formed on the side of the second passivation layer away from the first passivation layer. The anti-reflection layer can reduce the decrease of passivation performance caused by bond breakage and the occurrence of ultraviolet-induced decay phenomenon. The second passivation layer can also maintain a relatively stable passivation effect under different working conditions, provide continuous and stable performance support for field passivation, and further reduce the formation of surface dangling bonds and improve the passivation performance.

The invention discloses a wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector and a preparation method thereof, the wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, gold nanoparticles are deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a double-four-quadrant photoelectric detector, and the thickness of the double-four-quadrant photoelectric detector is larger than that of the micro-nano conical B-Si structure. And the boundary area of the double four quadrants is electrically isolated by etching deep grooves and filling oxygen-silicon compounds to form isolation grooves. The gold nanoparticles are compounded on the surface of B-Si, hot electrons can be excited through a localized surface plasma resonance mechanism and injected into a black silicon conduction band to participate in the photoelectric conversion process, the band gap limitation of the B-Si material is broken through, wide spectral response is achieved, the response capability in a near-infrared region is improved, and the photoelectric conversion efficiency is improved. And meanwhile, a silicon oxide and silicon nitride passivation film is introduced to the surface of the black silicon and gold nanoparticle composite structure, and a surface carrier recombination process is inhibited by filling dangling bonds and defect states on the surface of the black silicon pointed cone structure, so that the dark current level of the device is reduced.

The invention relates to a metal interconnection layer and a preparation method thereof. The preparation method comprises the following steps: providing a substrate; the dielectric laminations and the initial metal wires are alternately arranged on the substrate along a first direction parallel to the first surface; the side wall of the initial metal wire comprises a protruding part, and the protruding part is embedded in the dielectric lamination layer along the first direction; etching the dielectric laminated layer, forming a groove between the adjacent initial metal wires, and then forming a liner oxide layer covering the inner surface of the groove and the top surfaces of the initial metal wires; the bottom face of the groove is lower than the bottom face of the protruding part. Performing a surface treatment process on the exposed surface of the liner oxide layer, and at least adding a target dangling bond for increasing the coating rate on the inner surface of the groove not lower than the convex part; after an oxide layer is formed in the groove, removing the rest of the film layer with the top surface higher than the top surface of the protruding part to obtain a target metal wire; an air gap structure is arranged in the oxide layer. The technological process of the air gap structure in the metal interconnection layer can be simplified.

Semiconductor devices and corresponding manufacturing methods are disclosed. The method includes: forming a first layer on a first substrate; treating the first layer with a nitrogen-based plasma to form a first type of dangling bond; treating the first layer with an oxygen-based plasma to convert the first type of dangling bonds to a second type of dangling bonds; and treating the first layer with water to convert the second type of dangling bond to a third type of dangling bond.

The invention discloses an HEMT (High Electron Mobility Transistor) chip preparation method and system, and the method comprises the steps: carrying out the longitudinal etching on an epitaxial layer on an epitaxial wafer based on a first etching method, forming a plurality of physical isolation grooves, and dividing the epitaxial layer into a tube core array comprising a plurality of independent tube core units through the physical isolation grooves; for any tube core unit, epitaxially etching a step-shaped structure on the side surface of the tube core unit based on a second etching method; and bombarding the surface of the step-shaped structure by adopting ion current with strong electronegativity, so that active plasma in the ion current is combined with dangling bonds on the surface of the step-shaped structure to form a bonding layer so as to passivate the surface of the step-shaped structure. According to the method, the stable chemical bonding layer is formed, dangling bonds on the external delay surface are directly neutralized, surface state trapped charges are reduced, an electron migration path is blocked, and leakage current is greatly reduced; in addition, based on the formed bonding layer, the electric field distribution on the surface of the stepped structure can be effectively optimized, so that the breakdown voltage is improved.

A method for preparing a surface for bonding utilizes multiple processing techniques to increase bonding strength. The method can include performing a first processing technique on a surface of a material using a first plasma process to promote diffusion into a first surface of a diffusion layer deposited after the first processing technique, where the first processing technique uses a capacitively coupled plasma (CCP) or a combination of both CCP and inductively coupled plasma (ICP); forming the diffusion layer on the surface of the material; performing a second processing technique to increase diffusion of the diffusion layer into the surface of the material using a second plasma process, where the second processing technique uses CCP; and performing a third processing technique to form dangling bonds on the diffusion layer using a third plasma process, where the third processing technique uses ICP or a combination of both CCP and ICP.

The invention relates to a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure comprises the steps of providing a substrate; the substrate includes a first region and a second region. Forming a first gate dielectric layer on the top surface of the substrate in the first region, and forming a second gate dielectric layer on the top surface of the substrate in the second region; and the size of the first gate dielectric layer in the second direction is greater than that of the second gate dielectric layer in the second direction. And forming a first initial dangling bond repair layer in the first gate dielectric layer and forming a second initial dangling bond repair layer in the second gate dielectric layer by adopting a first target process. Adopting a second target process to enable the first initial dangling key repair layer and the second initial dangling key repair layer to move to the target interface and to be mutually bordered so as to form a dangling key repair layer; the target interface is an interface of the gate dielectric layer and the substrate. According to the invention, the dangling bond at the target interface can be accurately and fully repaired on the premise that the gate dielectric layer is not damaged.

The present invention relates to the technical field of silicon carbide, and specifically to a method for improving the surface life of a silicon carbide wafer. Based on a PECVD thin film deposition method, a corresponding amorphous silicon thin film is formed on at least one side of the surface of the silicon carbide wafer. During the PECVD annealing process, hydrogen atoms in the amorphous silicon thin film escape to the corresponding surface of the silicon carbide wafer, thereby passivating carbon vacancy defects on the corresponding surface of the silicon carbide wafer. Furthermore, since the lattice constant of the amorphous silicon film is close to that of the silicon carbide wafer, the amorphous silicon film can well form bonds with dangling bonds on the surface of the silicon carbide wafer, thereby reducing the number of dangling bonds on the surface of the silicon carbide wafer and eliminating carbon vacancy defects, i.e., passivating the carbon vacancy defects on the surface of the silicon carbide wafer, thereby improving the life of at least one side of the surface of the silicon carbide wafer.

The present invention discloses an application of a chelating agent in inhibiting the catalytic activity of low-dimensional nanomaterials and DNA shearing. When the chelating agent is used to inhibit the catalytic activity of low-dimensional nanomaterials, the chelating agent is mixed with the low-dimensional nanomaterial, so that the electrons provided by the chelating agent interact with the dangling bonds of the defects of the low-dimensional nanomaterial to form covalent bonds, thereby inhibiting the catalytic activity of the low-dimensional nanomaterial. The application of the chelating agent in DNA shearing is to mix the chelating agent with the low-dimensional nanomaterial and then mix it with a DNA solution, so that the electrons provided by the chelating agent interact with the dangling bonds of the defects of the low-dimensional nanomaterial to form covalent bonds, thereby inhibiting the effect of the catalytic activity of the low-dimensional nanomaterial on DNA shearing. The present invention utilizes the chelating effect of the chelating agent on the defects of the low-dimensional nanomaterial to inhibit the catalytic activity of the defects of the low-dimensional nanomaterial, and utilizes this property to successfully inhibit the shearing effect of the low-dimensional nanomaterial on DNA, which is of great significance for the later development of related biological applications of nanozymes.

This invention discloses a photochemical reaction and shear thickening composite polishing method applicable to diamond workpieces. The method involves processing the diamond workpiece using a specific shear thickening polishing fluid. During polishing, ultraviolet light is continuously irradiated into the polishing fluid. The photocatalyst microparticles in the polishing fluid absorb the energy of the ultraviolet light, generating photogenerated holes to form hydroxyl radicals. On one hand, the hydroxyl radicals combine with the Si dangling bonds on the surface of nano-silica to form -Si-OH groups. On the other hand, the hydroxyl radicals in the shear thickening polishing fluid contact the rough surface of the workpiece, forming a large number of -OH functional groups on its surface. During polishing, the friction between the workpiece surface and the shear thickening polishing fluid causes a local temperature increase in the fluid, promoting a condensation reaction to form C-O-Si chemical bonds. Then, under the action of strong shear force, the C-C back bonds on the surface of the diamond workpiece are broken, removing the C-O-Si chemical bonds and achieving efficient and high-quality polishing.

This invention relates to the field of light-emitting diode (LED) technology and discloses an epitaxial wafer for an LED and its fabrication method. The fabrication method includes the following steps: (1) providing a substrate; (2) depositing an epitaxial layer on the substrate; (3) dry etching the epitaxial layer to form a patterned structure with etched sidewalls; (4) forming a passivation layer in situ on the etched sidewalls of the patterned structure; wherein, forming the passivation layer in situ includes: maintaining a gas atmosphere of N2 and / or NH3 under conditions of 300℃-600℃ and 50mbar-500mbar, introducing a boron source and a phosphorus source for plasma treatment, and generating the passivation layer in situ at the sidewalls. By implementing this application, the formed passivation layer can replenish nitrogen vacancies, significantly reduce carrier trap concentration, passivate residual Ga dangling bonds, wrap the repair layer surface, reduce defect stress, and prevent the re-adsorption of oxygen or water vapor in the atmosphere.

The application discloses a tin-based perovskite film based on stress regulation, a preparation method thereof and a photoelectric device, wherein the preparation method comprises the following steps: placing a tin-based perovskite liquid film and a ligand solution in a same chamber, stopping air extraction after the chamber is vacuumized to be lower than 1000 Pa through air extraction, wherein the ligand solution is a solution containing an amine group or a mercapto functional group; maintaining a closed state of the chamber, tin-based perovskite is complexed with a solvent to form an intermediate phase solid film with heat stress impact resistance, and the ligand solution continuously volatilizes to fill the chamber to form a ligand atmosphere, the ligand is combined with uncoordinated tin in the intermediate phase solid film to reduce surface defects; and taking out the intermediate phase solid film and then annealing. Through two-step regulation of stress impact and grasping the opportunity of defect treatment, the ligand is combined with uncoordinated tin in the intermediate phase solid film in vacuum drying, and dangling bonds and defects on the surface of the perovskite are weakened. Then, annealing treatment is performed, lattice distortion caused during annealing is reduced, and finally the quality of the tin-based perovskite film is improved.

The application discloses a preparation method of a boron aluminum nitride / nitrogen terminal diamond two-dimensional electron gas heterojunction structure which improves lattice mismatch, and comprises the following steps: obtaining a 111 plane monocrystalline silicon substrate; epitaxially growing a monocrystalline boron nitride transition layer on the 111 plane monocrystalline silicon substrate; growing a diamond epitaxial layer on the surface of the monocrystalline boron nitride transition layer; performing nitrogen terminal treatment on the surface of the diamond epitaxial layer to form a nitrogen terminal surface; epitaxially growing monocrystalline boron aluminum nitride with an Al plane polar wurtzite structure and a donor impurity on the nitrogen terminal surface to form a boron aluminum nitride epitaxial layer, so as to form a boron aluminum nitride / nitrogen terminal diamond two-dimensional electron gas heterojunction. The preparation method breaks through the size limitation of a high-quality diamond substrate, effectively alleviates the lattice distortion of boron aluminum nitride on diamond in the epitaxial process, reduces the surface state and the dangling bond at the formed heterojunction interface, and improves the quality of the diamond heterojunction.

Disclosed in the present application are a silicon-nitride charge-trapping memristor and a preparation method therefor. The memristor has three functional layers, wherein the upper functional layer and the lower functional layer are made of SiO2, and the intermediate functional layer is made of SiNX. The memristor is treated by a low-temperature annealing process, such that SiNX in the functional layers forms silicon dangling bonds, which are traps for capturing and releasing charges. The memristor realizes a change in resistance by using the mechanism of capturing and releasing charges in the SiNX traps. The memristor provided in the present application does not have the non-uniformity problem caused by the random growth of conductive filaments, and does not require a high-voltage forming process, thereby achieving a relatively high uniformity and a relatively wide application prospect. Moreover, the memristor can achieve reliable multi-level storage and pulsed synaptic characteristics. In addition, by using silicon nitride as a core resistive-switching material, the advantages of low cost, ease of availability, and enhanced compatibility with CMOS processes are achieved.

The present invention relates to the field of mechanical lubrication technology, and in particular to a lubricating film, a preparation method thereof, and an application thereof. The preparation method provided by the present invention comprises the following steps: subjecting a substrate to Ar ion bombardment treatment to obtain a pretreated substrate; and repeatedly depositing a MoS2 film and performing N plasma passivation treatment on the surface of the pretreated substrate to obtain the lubricating film. The preparation method of the present invention introduces a trace amount of N element to form a dangling bond passivation effect on S vacancies in the film, and the film has a nanocrystalline dense structure and good chemical stability. According to the description in the examples, the vacuum friction coefficient of the lubricating film provided by the present invention is lower than 0.03, and the lubrication life is higher than 5.0×10 5 r, and also has good lubrication performance under atmospheric conditions.