The invention belongs to the technical field of
semiconductor devices, and particularly discloses a high-
electron-mobility
transistor with an InGaN
insertion layer and a double-barrier cap layer and a preparation method of the high-
electron-mobility
transistor. The high-
electron-mobility
transistor comprises a substrate, a nucleating layer, an AlGaN gradient buffer layer, a GaN channel layer, an InGaN
insertion layer, an AlGaN
barrier layer, a barrier
protection layer, a double-barrier cap layer (an AlGaN layer, a GaN layer and an AlGaN layer) and a gate
electrode which are sequentially arranged in a
contact mode.
Ohmic contact regions are arranged on the two sides of the AlGaN
barrier layer and the barrier
protection layer respectively and are electrically connected with the source
electrode and the drain
electrode respectively. By introducing the specific epitaxial layer combination and
doping design, the distribution and control of two-dimensional electron gas are optimized, the confinement to electrons is increased, the output characteristic of the device is improved, the current collapse effect is inhibited, the leakage current is reduced, and the
threshold voltage stability and switching characteristic of the device are improved.