690 results about "Negative voltage" patented technology

The invention relates to a safe starting control method, device, equipment and medium for a bootstrap drive inverter, and the method comprises the steps: obtaining a detection voltage representing an output filter inductance voltage after responding to any starting event and before formally transmitting a drive signal; comparing the negative voltage with a preset negative voltage safety threshold value; only when the detected voltage is higher than the safety threshold, a driving enable signal is generated to allow the inverter to be normally started; otherwise, generating a driving blocking signal, carrying out detection and judgment again after waiting for preset time delay, and circulating the process until the system state enters the safe area; the method is realized by modifying a control algorithm, no power hardware needs to be added, the starting impact risk is eliminated with low cost, and the contradiction between the hardware limitation of a bootstrap drive circuit and the negative residual voltage possibly existing on the output inductance of the inverter is solved; therefore, the safety problem of direct connection between the impact current and the bridge arm during starting in an unfavorable initial state is solved.

Disclosed herein is a single photon avalanche diode (SPAD) pixel circuit, including a SPAD having an anode coupled to a negative voltage and a cathode and a cascode transistor having a drain coupled to the cathode of the SPAD, a gate controlled by a cascode control signal, and a source. A readout circuit is coupled to the source of the cascode transistor and configured to detect a voltage change at the source of the cascode transistor and generate a pulse indicating an occurrence of an avalanche event. An active quenching circuit is coupled to the cathode of the SPAD and configured to detect an onset of the avalanche event and pull the cathode of the SPAD to a negative voltage to quench the avalanche event.

The invention provides a CAN-FD wake-up circuit, a CAN transceiver and an electronic device, the CAN-FD wake-up circuit comprises a level shift module, an amplification comparison module and a wake-up identification module, the differential input end of the amplification comparison module is the source electrode of an NMOS tube, and the source electrode of the NMOS tube allows input of negative voltage, so the level shift module can process a CAN low level signal in a negative voltage range, and the wake-up identification module can process the CAN low level signal in the negative voltage range. Therefore, the input common-mode level range of the wake-up circuit of the CAN-FD is improved. On-off of the first switch is controlled based on whether the CAN transceiver is in a dormant state or a working state so as to control access of the second current source, and the output current of the second current source is a plurality of times of the output current of the first current source so as to increase the bandwidth of the amplification comparison module in the working state. Therefore, the amplification comparison module can be simultaneously applied to the dormant state and the working state of the CAN transceiver, so that the circuit cost is reduced.

The invention discloses a negative voltage clamping circuit and method. The negative voltage clamping circuit comprises a current mirroring module which is used for providing a reference current Iref and generating a corresponding reference current according to a preset current proportion mirroring; the voltage detection module is connected with the current mirror module and the negative voltage input end of the chip and is used for detecting the voltage VS of the negative voltage input end; and the clamping control module is connected with the current mirroring module and the voltage detection module, and the clamping control module is configured to be switched on when the voltage VS of the negative voltage input end exceeds a preset clamping threshold value and clamp the voltage VS of the negative voltage input end within a preset range. According to the negative voltage clamping circuit, the change of the negative voltage input end can be monitored in real time, it is ensured that the clamping control module responds rapidly when the voltage exceeds a threshold value, the negative voltage is limited within a safe range, circuit damage or performance reduction caused by too low voltage is avoided, and therefore the stability and reliability of a chip are improved.

The ultralow frequency sensor comprises a vibration detection unit, a power supply voltage stabilization unit and a signal conditioning unit, the power supply voltage stabilization unit is provided with a low dropout linear voltage regulator U20, a voltage converter U19 and a negative voltage regulator U21, and the low dropout linear voltage regulator U20 stabilizes an external power supply as a positive power supply VCC; the voltage converter U19 is used for converting positive voltage of an external power supply into negative voltage and outputting stable negative power supply VEE through the negative voltage stabilizer; the positive power supply VCC and the negative power supply VEE supply power to the signal conditioning unit; the signal conditioning unit comprises a high common mode rejection differential amplifier, a differential-to-single-ended amplifier, a band-pass filter and a differential output driver, a differential signal output by the vibration detection unit sequentially passes through the high common mode rejection differential amplifier, the differential-to-single-ended amplifier, the band-pass filter and the differential output driver, and then a differential voltage signal is output; the method has the advantages of high stability and reliability and the like.

The embodiment of the invention provides a multi-output isolated power supply, which comprises a power transformer comprising a single primary side coil and a single secondary side coil; a switch driving circuit coupled to the primary coil to output a driving voltage to the primary coil based on the input voltage; a rectification circuit coupled to the secondary coil and configured to rectify a voltage across the secondary coil to output a first DC voltage at a first rectified voltage output end and a second DC voltage at a second rectified voltage output end; and an output unit coupled to the first rectified voltage output terminal and the second rectified voltage output terminal, the output unit comprising one or more low dropout linear regulator circuits, where an output terminal of a predetermined low dropout linear regulator circuit is coupled to the secondary circuit ground, the output unit is configured to output at least one positive voltage and at least one negative voltage with a voltage at an output terminal of a predetermined low dropout linear regulator circuit as a reference.

The application discloses a switch tube off negative voltage determination method and device and a switch tube driving control circuit. The switch tube off negative voltage determination method comprises the following steps: determining a first off negative voltage model and a second off negative voltage model; inputting the obtained off gate resistance, on gate resistance, bus voltage and minimum on voltage of the switch tube into the first off negative voltage model to obtain an upper limit absolute value of the off negative voltage of the switch tube; inputting the obtained off gate resistance, on gate resistance, bus voltage and maximum bearable negative voltage absolute value of the switch tube into the second off negative voltage model to obtain a lower limit absolute value of the off negative voltage of the switch tube; and determining the off negative voltage interval of the switch tube according to the upper limit absolute value and the lower limit absolute value. When the off negative voltage interval is used for negative voltage off control of the switch tube, the switch tube can be effectively prevented from being mis-opened, the switch tube can be protected, and the service life of the switch tube is prolonged.

The invention provides a voltage stabilizer based on voltage conversion, a control method and a storage medium, and the voltage stabilizer comprises a PFC chopping boost circuit which receives an input alternating current and a boost duty ratio, carries out the chopping boost of the input alternating current based on the boost duty ratio, and outputs a high-voltage chopping alternating current signal; the positive and negative half-cycle filter circuit is connected with the PFC chopping booster circuit and is used for rectifying and filtering the high-voltage chopping alternating-current signal to obtain a positive voltage-stabilizing chopping alternating-current signal and a negative voltage-stabilizing chopping alternating-current signal; the positive and negative half-cycle voltage reduction and stabilization circuit is connected with the positive and negative half-cycle filter circuit, receives the voltage reduction duty ratio, and performs voltage reduction and stabilization on the positive voltage stabilization chopping alternating current signal and the negative voltage stabilization chopping alternating current signal based on the voltage reduction duty ratio to obtain a preset actual positive electric signal and a preset actual negative electric signal; and the output voltage merging circuit is connected with the positive and negative half-cycle voltage reducing and stabilizing circuit, and integrates the preset actual positive electric signal and the preset actual negative electric signal to obtain a voltage stabilizing electric signal. According to the invention, the voltage fluctuation is quickly responded at low cost.

The invention discloses a negative voltage driving circuit, a chip, electronic equipment and a vehicle, and belongs to the technical field of circuits. The negative voltage driving circuit comprises a monitoring module, a digital logic control module and a negative voltage generation module, the monitoring module is used for collecting a first working parameter of a transistor and transmitting the first working parameter to the digital logic control module; and the digital logic control module is used for determining a target negative voltage turn-off mode for the transistor according to the first working parameter, and controlling the negative voltage generation module to generate a corresponding negative voltage according to the target negative voltage turn-off mode. According to the technical scheme, the monitoring module collects the working parameters of the transistor in real time, the digital logic control module determines the optimal target negative voltage turn-off mode for the transistor according to the working parameters collected in real time, and then the negative voltage generation module is controlled to rapidly and accurately generate the negative voltage. And the driving requirements of the transistor under different working conditions can be quickly responded.

The invention discloses a preparation method of a piezoelectric response type hybrid ceramic membrane, which is characterized in that polyvinylidene fluoride powder is used as a base material of the membrane, propylene carbonate or ethylene carbonate is used as a diluent, negative-voltage-loaded piezoelectric ceramic modified nanoparticles are doped, and a proper amount of inorganic piezoelectric nanoparticles are doped, so that the electrical property of the pressed membrane is remarkably improved; a negative charge group introduced to the surface of the membrane through surface grafting is combined, so that the relative content of beta crystal forms of the polyvinylidene fluoride membrane is increased, and finally efficient interception and excellent anti-pollution effects on humic acid are achieved.

A plant growth accelerator includes a negative voltage device with a negative voltage generator. A negative electrode is electrically connected to an output terminal of the negative voltage generator. The negative electrode is configured to directly or indirectly connect to plants.

The invention relates to the technical field of semiconductors, and provides an impact negative charge driving circuit for suppressing crosstalk and a switching power supply converter, and the circuit comprises a driving module and an impact negative charge module. A first end of the driving module receives an input signal, and a second end of the driving module is connected with a grid node of the silicon carbide MOSFET and is used for controlling on and off of the silicon carbide MOSFET according to the input signal; a first end of the impact negative charge module receives an input signal, a second end of the impact negative charge module is connected with a power supply end, a third end of the impact negative charge module is connected with a ground end, and a fourth end of the impact negative charge module is connected with a grid node of the silicon carbide MOSFET. When the drain voltage of the silicon carbide MOSFET rises to cause the Miller current to flow backward to the gate node, negative charges are released to the gate node to neutralize the Miller current. Efficient crosstalk suppression is achieved through a physical mode of charge neutralization, dependence on a continuous negative voltage power supply is not needed, the system architecture is simplified, and the cost is reduced.

This invention relates to the field of power system and energy management technology, and in particular to a collaborative power supply system for energy storage batteries and distributed power sources in microgrids. The invention integrates a reverse recovery charge dynamic clamping module into the gate drive circuit of an IGBT module. The reverse recovery charge dynamic clamping module includes: a di / dt sensing unit, a pulse generation unit, a negative voltage injection unit, and a gate clamping execution unit. The di / dt sensing unit collects the rate of change of current flowing through the emitter of the IGBT module in real time, and triggers the pulse generation unit when the rate of change of current exceeds a set threshold. The pulse generation unit generates a delayed control pulse to control the negative voltage injection unit to switch the output voltage to a target voltage value and maintain it for a specified time. The gate clamping execution unit locks the gate potential of the IGBT module based on the target voltage value. This invention ensures that the system maintains low electromagnetic interference, high energy efficiency conversion, and long-term operational reliability during millisecond-level seamless switching.

The application relates to the technical field of inertial devices, in particular to a MEMS inertial device and a manufacturing method thereof, which comprises a lower cover plate, a device layer and an upper cover plate which are sequentially stacked and bonded from bottom to top, one of the upper cover plate and the device layer is provided with a surface doping layer, and the other is bonded with the surface doping layer; the upper cover plate and the device layer have the same conductive type and the opposite conductive type of the surface doping layer. According to the application, two back-to-back PN junctions are formed at the bonding interface of the upper cover plate and the device layer, when the device layer is loaded with a positive voltage or a negative voltage, one of the two PN junctions is always in a reverse blocking state, can play an insulating role, and thus the electrical isolation between the upper cover plate and the device layer is realized; meanwhile, the silicon oxide insulating layer at the bonding interface of the upper cover plate and the device layer is removed, so that the internal stress of the device caused by the difference in the thermal expansion coefficient of different materials at the bonding anchor point is reduced, and the temperature drift characteristics, long-term stability and other key indicators of the device are improved.

The utility model belongs to the technical field of electronic circuits, and discloses a simple circuit capable of generating negative precision voltage reference and resisting high temperature of 200 DEG C. The simple circuit comprises a positive reference voltage source U1, a capacitor C1 and an operational amplifier U2, the output end of the positive reference voltage source U1 is connected to the inverted input end of the operational amplifier U2 through the isolation resistor R, the input end of the positive reference voltage source U1 is connected to a VCC power supply, and the GND pin of the positive reference voltage source U1 is connected to the output end of the operational amplifier U2; a pin 3 of the positive reference voltage source U1 is connected to a VCC power supply; a pin 3 of the positive input end of the operational amplifier U2 is grounded, and a pin 2 of the operational amplifier U2 is connected with a negative power supply; the two ends of the capacitor C1 are connected with the floating ground end of the positive reference voltage source U1 and the output end of the positive reference voltage source U1. According to the utility model, fewer components are used, and the precision is higher; the circuit has flexibility, and different negative precision voltage references can be generated by selecting different reference voltage sources and amplifier combinations; and the negative voltage reference generated by the module at the high temperature of 200 DEG C still has very good temperature stability.

The invention relates to the technical field of chip testing, and discloses a circuit, method, device and system for measuring the voltage of a chip pin, and the circuit comprises a relay circuit which can be in a first state or a second state through a control signal; when the relay circuit is in the first state, the chip pin is directly connected with the ATE test channel through the relay circuit; the voltage division circuit is provided with a test end, a sampling end and a reference end; and when the relay circuit is in the second state, the test end is connected with the chip pin through the relay circuit, the sampling end is connected with the ATE test channel through the relay circuit, and the reference end is connected with the reference voltage. And when the relay circuit is in the second state, the voltage of the sampling end can be adjusted to a measurable range of the ATE test channel through the voltage division circuit and the reference voltage, so that the high voltage and the negative voltage exceeding the measuring range at the chip pin can be obtained through calculation.

In a CMOS circuit provided as part of a drive circuit in a frame region, a second TFT including a second semiconductor layer formed of an oxide semiconductor includes a first gate electrode provided on one surface side of the second semiconductor layer with a first inorganic insulating film interposed therebetween, and a second gate electrode provided on the other surface side of the second semiconductor layer with a second inorganic insulating film interposed therebetween. The second TFT is configured to apply a negative voltage to the second gate electrode during an off period in which no voltage is applied to the first gate electrode.

The application discloses a positive and negative voltage source driving circuit, which is used for providing stable and accurate positive and negative voltage for a load circuit, saving chip area and energy consumption during work. The circuit comprises a band gap reference circuit, which is used for providing a positive reference voltage +VREF and working between a positive voltage VSP and a ground potential GND; a reference voltage generating circuit, which is used for receiving the positive reference voltage +VREF and outputting a positive voltage reference VREF_VGMP to a positive voltage operational amplifier and a negative voltage reference VREF_VGMN to a negative voltage operational amplifier; and the positive voltage operational amplifier and the negative voltage operational amplifier, which are used for outputting a positive voltage and a negative voltage to the load circuit respectively.

A dual-mode asymmetric P-I-N perovskite radiation detector and its fabrication method are disclosed, belonging to the field of radiation detector technology. The method first involves preparing a perovskite single-crystal precursor solution. A small amount of this solution is used for seed crystal growth at a constant temperature, with the seed crystal serving as the seed for CsPbBr3 single-crystal growth on a P-type substrate. Next, a MAPbBr3 solution is prepared, and MAPbBr3 single crystals are grown to form the I layer. Finally, MAPbBr3 (Bi) is prepared... 3+ A doped solution was used to grow MAPbBr3 (Bi) as the N-layer. 3+ A dual-mode asymmetric P-I-N perovskite radiation detector is obtained by fabricating top and bottom electrodes using a doped single crystal. This invention utilizes the forward conduction and reverse cutoff characteristics of the P-I-N structure. When a negative voltage is applied to the N layer for forward bias, X-rays incident on the P layer are used for radiation detection, exciting the photoconductivity gain and achieving a sensitivity far exceeding that of CsPbBr3 single crystals; simultaneously, MAPbBr3 (Bi 3+ The doped single crystal has a natural shielding effect on soft X-rays, enabling high-sensitivity detection of hard X-rays in the I layer when X-rays are incident on the N layer with positive pressure and reverse P-I-N bias.

The invention relates to an electronics unit (10) for controlling a load current (I) of an electric load (12), in particular of an electric motor (14), of an electric device by means of at least one power transistor (18) which has at least one control electrode (34) and two power electrodes (36, 38), wherein a control circuit (48) of the power transistor (18) comprises a driver circuit (26) controlling the control electrode (34) and a power circuit (52) of the power transistor (18) comprises the two power electrodes (36, 38) and the electric load (12), and wherein a parasitic inductance of the control circuit (48) and at least one parasitic inductance of the power circuit (52) form a common source inductance (LCSH, LCSH1, LCSH2). According to the invention, the switching behaviour of the at least one power transistor (18) can be influenced during a switching phase (T2, T7), in particular a switch-off phase T7), in which the load current (I) changes over time, by means of at least one controlled current source (54) which is connected to one of the power electrodes (38), in such a way that a negative voltage feedback to the control electrode (34) takes place as a result of the change over time of the load current (dI / dt) via the common source inductance (LCSH, LCSH1, LCSH2). In addition, the invention relates to an electric device, in particular a motor-operated electric device, comprising an electronics unit (10) according to the invention for controlling an electric load (12), in particular a one-phase or multiphase electric motor (14).

The application provides a preparation device and method of nanoscale superfine powder, and relates to the technical field of calcium particle preparation, and comprises a solid-gas mixing cylinder, a positive voltage cylinder, a negative voltage cylinder and a positive-negative ion impact tube; the solid-gas mixing cylinder is provided with a feeding port for inputting animal skeleton coarse particles and oxygen to form a solid-gas mixed gas flow; the solid-gas mixing cylinder is communicated with the positive voltage cylinder and the negative voltage cylinder; the positive voltage cylinder ionizes the oxygen in the solid-gas mixed gas flow into a positive ion state, and the negative voltage cylinder ionizes the oxygen in the solid-gas mixed gas flow into a negative ion state; the outlet of the positive voltage cylinder is communicated with the outlet of the negative voltage cylinder, the solid-gas mixed gas flow with the positive ion state and the solid-gas mixed gas flow with the negative ion state are combined at the outlet and enter the positive-negative ion impact tube, the solid-gas mixed gas flow with the positive ion state and the solid-gas mixed gas flow with the negative ion state in the positive-negative ion impact tube are strongly impacted, and a large amount of energy released when the positive ion and the negative ion combine crushes the animal skeleton coarse particles into superfine powder.

The invention relates to a display circuit, a display method, a display device, electronic equipment and a storage medium. The circuit comprises a pixel driving circuit, a differential circuit and a display control circuit, the first input end of the differential circuit is connected with the negative voltage end of a light emitting diode of the pixel driving circuit, the second input end of the differential circuit is connected with the positive voltage end of the light emitting diode, and the display control circuit is connected with the first input end of the differential circuit. The differential output end of the differential circuit is connected with the feedback end of the display control circuit; the control end of the display control circuit is connected with the voltage receiving end of the pixel driving circuit. A pixel driving circuit, a differential circuit and a display control circuit are configured in a display circuit, the differential circuit collects fluctuating voltage, and then a display compensation circuit transmits compensated control voltage to the pixel driving circuit, so that the pixel driving circuit controls light emission according to the compensated control voltage, screen ripple noise is avoided, and the display quality is improved. And the water ripple phenomenon is effectively solved.

This prevents malfunctions caused by negative voltage. [Solution] The semiconductor device 10 includes, for example, a connection terminal BR, a ground terminal GND, a pull-down circuit 13 that conducts between the connection terminal BR and the ground terminal GND, and a cutoff circuit 30 that cuts off the current path from the ground terminal GND to the connection terminal BR via the pull-down circuit 13 when the voltage of the connection terminal BR is lower than that of the ground terminal GND.

The application relates to the technical field of switching power supply, and discloses a bridge type low-stress passive soft switching boost power factor correction circuit, which comprises a direct current input power supply, a main power switching tube, an output filter capacitor and a coupling inductor comprising a primary side and a secondary side; a passive soft switching buffer network is connected to a main circuit of the circuit, the network comprises a diode full-bridge structure and a buffer capacitor, and the leakage inductance of the secondary side of the coupling inductor is connected between the midpoints of two bridge arms of the full-bridge structure; the application utilizes the ratio difference of the coupling inductor to generate a forward potential difference, drives the buffer capacitor to reversely charge to establish a negative voltage, and further provides a discharge circuit for the parasitic junction capacitance of the main power switching tube, so that zero voltage turn-on is realized, and high-frequency switching loss is reduced; meanwhile, the highest voltage stress of the semiconductor device is clamped in the range of the direct current output voltage through the potential restriction of the full-bridge network. The application does not need auxiliary active devices, and improves conversion efficiency and reliability while simplifying the system structure.

The invention relates to a vehicle-mounted safety output circuit, which comprises a negative voltage power supply sub-circuit, a DC control input sub-circuit, a pulse input sub-circuit, an intermediate sub-circuit, an output sub-circuit, a grounding end, a VCC power supply and a load, and is characterized in that the pulse input sub-circuit is connected with the negative voltage power supply sub-circuit, and the negative voltage power supply sub-circuit and the DC control input sub-circuit are connected with the intermediate sub-circuit; the negative voltage power supply sub-circuit is connected with the DC control input sub-circuit, the middle sub-circuit is connected with the output sub-circuit, the VCC power supply is respectively connected with the middle sub-circuit and the output sub-circuit, the load is connected with the output sub-circuit, and the grounding end is respectively connected with the negative voltage power supply sub-circuit, the middle sub-circuit and the output sub-circuit. The DC control input sub-circuit and the pulse input sub-circuit are used as input, and the final output can be effective only when the low-level output of the DC control input sub-circuit and the 100KHz and 110KHz alternating pulses of the pulse input sub-circuit are ensured to be effective at the same time, so that the safety is ensured.

The invention provides a control circuit applied to a TFT LCD (Thin Film Transistor Liquid Crystal Display) driving chip for reducing Source driving peak current, comprising a group of Source basic driving units which comprise a driving buffer circuit, a polarity exchange control circuit, a positive peak current control circuit, a negative peak current control circuit and two polarity load channels S1 and S2, the driving buffer circuit is composed of a positive voltage buffer and a negative voltage buffer, the input voltage VIPP of the positive voltage buffer is connected with the output of the positive peak current control circuit, and the input voltage VIPN of the negative voltage buffer is connected with the output of the negative peak current control circuit. The input of the positive peak current control circuit is a positive gray-scale voltage VREFP, and the input of the negative peak current control circuit is a negative gray-scale voltage VREFN, the output OUTP of the positive voltage buffer and the output OUTN of the negative and positive voltage buffer are connected with the input end of the polarity exchange circuit. The invention further provides a corresponding control method. The circuit can better reduce peak current, and is low in cost and easy to popularize.

A power supply system 1 for a mass spectrometer. The system comprises a positive voltage supply and negative voltage supply, and first and second optocouplers 19, 20 which are controlled by a controll

The invention discloses a driving and protecting circuit of an IGBT (Insulated Gate Bipolar Translator) module, and belongs to the technical field of engineering. The circuit comprises an optocoupler driving chip U1 which is used for receiving and isolating an external driving signal; the push-pull circuit is connected with the output end of the optocoupler driving chip U1 and is used for driving the grid electrode of an IGBT (Insulated Gate Bipolar Translator); and the protection circuit module is respectively connected with the optocoupler driving chip U1, the push-pull circuit and the IGBT, and is used for realizing overvoltage and desaturation detection, Miller clamping and soft turn-off functions. Compared with a traditional driving circuit, the driving circuit has the advantages of being stable in positive and negative voltage, high in driving capacity, multiple in protection function and the like, and reliability and stability of IGBT module driving are guaranteed.

There is provided a plasma processing method comprising: continuously introducing electromagnetic waves into a chamber of a plasma processing apparatus, the electromagnetic waves being VHF waves or UHF waves, the electromagnetic waves being introduced into the chamber so as to form standing waves within the chamber along a lower surface of an upper electrode of the plasma processing apparatus; periodically applying a negative voltage to the upper electrode while performing said continuously introducing the electromagnetic waves; and supplying a processing gas into the chamber only during a period in which the negative voltage is applied to the upper electrode.

This invention discloses an insulation resistance detection method and system, relating to the field of battery testing technology. The method includes: after disconnecting a first switching switch, a second switching switch, and a grounding switch, acquiring a first voltage of a first resistor and calculating the total voltage of the battery pack; after closing the grounding switch and the first switching switch, and after disconnecting the second switching switch, acquiring a second voltage of the first resistor and calculating a first positive voltage to ground and a first negative voltage to ground; after closing the grounding switch and the second switching switch, and after disconnecting the first switching switch, acquiring a third voltage of the first resistor and calculating a second positive voltage to ground and a second negative voltage to ground; and calculating the insulation resistance between the positive terminal and ground of the battery pack and the insulation resistance between the negative terminal and ground of the battery pack. This invention enables insulation resistance detection through switching operations using a series-connected switching arm and a fixed arm, improving detection accuracy and reliability while reducing costs.