112 results about "Stray inductance" patented technology

The invention discloses a power module. The power module comprises a direct current busbar, a radiator, an IGBT module I and an IGBT module II, the IGBT module I and the IGBT module II are respectively arranged on a mounting surface I and a mounting surface II of the radiator; the direct-current busbar comprises a direct-current busbar I, a direct-current busbar II, a direct-current busbar III and a direct-current busbar IV; the two ends of a fourth direct-current busbar are connected with the first IGBT module and the second IGBT module respectively, and the middle of the fourth direct-current busbar is connected with the middle of a third direct-current busbar. The two ends of the direct current busbar III are respectively connected with the direct current busbar I and the direct current busbar II; the direct current busbar I and the mounting surface I as well as the direct current busbar II and the mounting surface II are oppositely arranged and parallel to each other; the first direct current capacitor assembly is connected with the first direct current busbar, and the second direct current capacitor assembly is connected with the second direct current busbar. The influence of stray inductance is reduced by optimizing a current path, and the voltage spike at the switching moment is reduced due to the reduction of the stray inductance, so that the switching loss is reduced.

The invention provides a testing device of a power semiconductor device and a testing method based on the testing device, and relates to the field of semiconductors, and the testing device comprises a first probe loop which comprises a first probe which can be separated from or electrically contacted with a tested power semiconductor device; when the first probe is in electric contact with the tested power semiconductor device, the dynamic voltage change rate applying circuit applies dynamic voltage to the tested power semiconductor device through the first probe loop; the second probe loop comprises a second probe which is electrically contacted with the tested power semiconductor device; when the first probe is separated from the tested power semiconductor device, the parameter measuring circuit measures the electrical parameters of the tested power semiconductor device through the second probe loop; and the first stray inductance of the first probe loop is smaller than the second stray inductance of the second probe loop, so that the electrical parameters of the power semiconductor device can be accurately extracted under the condition that high dV / dt dynamic voltage is applied to the power semiconductor device.

The invention provides a power module, a motor controller and a vehicle, and relates to the technical field of vehicles, the power module comprises a circuit board layer, a chip substrate and a heat dissipation bottom plate, the circuit board layer comprises conducting layers and insulating layers which are alternately arranged in the vertical direction, and the conducting layers and the insulating layers are arranged on the uppermost layer and the lowermost layer of the circuit board layer respectively; the lowest insulating layer in the circuit board layer is marked as a first insulating layer, the conductive layer stacked on the first insulating layer in the circuit board layer is marked as a first conductive layer, the chip substrate is embedded in the first insulating layer, the heat dissipation bottom plate is arranged at the lower end of the first insulating layer, the chip substrate comprises a power chip and a mounting substrate, and the power chip is embedded in the mounting substrate. The power chip is arranged at the upper end of the mounting substrate and is electrically connected with the first conductive layer. Thus, the occupied space of the power module can be reduced, an electrical connection path between the power chip and the driving circuit and a heat dissipation path between the power chip and the heat dissipation bottom plate can be shortened, stray inductance is reduced, and the heat dissipation effect is improved.

This invention discloses an IGBT parallel module having at least two IGBTs connected in parallel, each IGBT configured with a paired FRD; the two parallel IGBTs are designated as first and second IGBTs, and their corresponding paired FRDs are designated as first and second FRDs, respectively. A bridging FRD is also configured between the first and second FRDs; a portion of the anode pins of the bridging FRD is connected to the anode pins of the first FRD via bonding wires, and another portion of the anode pins of the bridging FRD is connected to the anode pins of the second FRD via bonding wires; when current imbalance occurs between the first and second FRDs, the bridging FRD reduces the rated current of the first and second FRDs and performs current buffering, thereby reducing the current density of each FRD; the pin connection structure of the anode of the bridging FRD makes the stray inductance of the bridging FRD greater than that of either the first or second FRD, thereby improving the softness of the reverse recovery of the first and second FRDs. This invention can prevent failure defects caused by current concentration.

The invention belongs to the technical field of power electronics, and particularly relates to a solid-state direct-current circuit breaker module based on IGCTs, an upper pressing plate and a lower pressing plate are connected through a first screw rod, the number of first radiators is one more than that of the IGCTs, and the first radiators and the IGCTs are arranged in an overlapping mode; the number of the second radiators is one more than that of the first fast recovery diodes, and the second radiators and the first fast recovery diodes are arranged in an overlapping mode. First insulating cushion blocks are arranged between the first radiators and the lower pressing plate and between the second radiators and the lower pressing plate. Insulating cushion blocks II are arranged between the radiator I and the upper pressing plate as well as between the radiator II and the upper pressing plate and correspondingly abut against the radiator I and the radiator II through two force application mechanisms positioned on the inner side of the upper pressing plate; the piezoresistor is installed on the side, away from the first radiator, of the second radiator, the RCD protection unit is installed on the insulating plate, and the insulating plate is installed on the upper pressing plate and the lower pressing plate and located on one side of the first radiator and one side of the second radiator. The structure is compact, maintenance is easy, pressure is uniform, stray inductance is reduced, and overall stability and response speed are improved.

The application discloses a packaging structure of a power module, which comprises an insulating substrate, a plurality of base islands, a power device, a first diode, a second diode, a signal terminal, a power terminal and a plastic package body. The combination of the power device and the first diode is packaged together with the second diode, so that the stray inductance in the device is reduced, the layout and wiring are simplified, the device performance is improved, the application range of the device is wider, and the space utilization is greatly improved.

The embodiment of the utility model discloses a power module packaging structure which comprises a substrate and a power unit. Wherein the power unit comprises a first metal structure, a power device and a second metal structure which are sequentially overlapped, the second metal structure comprises a copper layer, the power unit is electrically connected with the substrate through the first metal structure, and the power unit is electrically connected with an external circuit board through the copper layer of the second metal structure. Therefore, the stray inductance of the power unit can be reduced, and the heat capacity of the power unit can be increased.

According to the packaging structure and the packaging method, in the packaging structure, a first surface and a second surface of a chip structure are electrically connected; the conductive structure is electrically connected with the first connecting end on the other side of the bonding area through the first substrate, and electric connection between the first connecting ends located on the two sides of the bonding area and between the first connecting ends located on the two sides of the bonding area and the chip structure is achieved through the first substrate, the chip structure, the conductive structure and the second substrate. The first surface and the second surface of the chip structure and the conductive structure are electrically connected in the vertical direction, so that stray inductance can be reduced; besides, a part of an electric connection path is realized through the chip structure, the second substrate and the conductive structure, so that the area occupied by the electric connection path in the first substrate can be reduced, the heat dissipation area of the first substrate is increased, the area for bonding the chip structure in the first substrate is also increased, and the heat dissipation efficiency of the first substrate is improved. The bonding number of the chip structure is correspondingly increased, the outflow capacity of the packaging structure is improved, and the performance of the packaging structure is optimized.

The utility model relates to a semiconductor device and its packaging technical field, specifically disclose a kind of module terminal and HPD packaging module using laminated busbar structure, including DC terminal, DC terminal includes: two ends and chip and direct current power supply intercommunication's first component and second component, first component and second component current is opposite;First component and second component form laminated busbar structure to offset reverse current magnetic field, the partial area of first component and the overall area of second component overlap to expand magnetic field offset effective area.The utility model forms laminated busbar structure by setting first component and second component, offset the magnetic field generated by reverse current, secondly, the projection area of second component is the effective overlapping area of first component and second component, to expand the effective area of magnetic field offset as far as possible, to reduce total magnetic flux without affecting laser welding, to reduce stray inductance, improve system reliability.

The application discloses a detection device and method of a power conversion unit. The detection device comprises a heating current source, a measuring current source, a switch tube control unit, a conduction voltage drop measuring unit and a signal processing unit. The signal processing unit controls the switch tube control unit to turn on each switch tube in the measured bridge arm, so that the heating current is input to each switch tube for a preset time period. The switch tube control unit is controlled to turn on each switch tube in turn. The measuring current is input and the conduction voltage drop is collected during the conduction of each switch tube. Whether the current sharing characteristic of the measured power conversion unit meets the standard is determined based on the conduction voltage drops corresponding to all the switch tubes. The application can realize offline detection of the power conversion unit, and can detect at one time that the current sharing characteristic of the power conversion unit does not meet the standard due to abnormal parameters such as welding resistance and stray inductance of each parallel branch.

The invention provides a low stray inductance test system comprising a detection area in which at least one to-be-detected power device is carried. The detection module is used for detecting a level signal output by the to-be-detected power device; the connection module is connected with the output end detection module of one to-be-detected power device carried in the detection area through welding, and is used for forming a detection loop, so that the detection module obtains a level signal output by the to-be-detected power device; and the capacitor module is connected with the output end of the to-be-detected power device and is used for shortening a current path. The beneficial effects of the invention are that the stray inductance is reduced by shortening the current path; only the to-be-detected power device and the detection module need to be welded once, only the to-be-detected power device needs to be replaced in each test, and the detection module cannot be damaged due to repeated welding.

The embodiment of the invention discloses a power circuit, a motor controller and a vehicle, and belongs to the technical field of power electronics. The power circuit comprises a bus capacitor module, two ends of which are respectively connected with an anode and a cathode of an input power supply; the input end of the power module is connected with the two ends of the bus capacitor module, and the output end of the power module is connected with the motor; the low-stray-inductance capacitor module is arranged between the bus capacitor module and the power module, the two ends of the low-stray-inductance capacitor module are connected with the two ends of the bus capacitor module and the input end of the power module respectively, and the low-stray-inductance capacitor module is used for reducing system stray inductance on a commutation path of the power circuit. And the stress when the power module is turned off is reduced. The power circuit provided by the embodiment of the invention can effectively reduce the system stray inductance of the motor controller.

The invention discloses a power module stray inductance test method and test platform, and relates to the field of power module stray inductance test, the method comprises the following steps: 1, constructing a test circuit, connecting a power module to be tested and a test accompanying power module in series, and then connecting the power module to be tested and the test accompanying power module in parallel with a bus capacitor; step 2, configuring a test state, configuring an upper tube and a lower tube of the to-be-tested power module to be in a conducting state, configuring an upper tube of the accompanying test power module to be in a turn-off state, and applying a double-pulse signal to a control electrode of the lower tube of the accompanying test power module; 3, collecting test data, and collecting voltage Vds at two ends of the power module to be tested and the change rate of current flowing through the power module to be tested when the double-pulse signal controls the lower tube of the test accompanying power module to perform secondary conduction; 4, calculating a single-time stray feeling calculation value; and step 5, repeating the steps 2-4 for N times, and taking an average value of N single stray inductance calculation values obtained by N times of calculation as a power module stray inductance value obtained by measurement. The method improves the convenience and accuracy of the stray inductance test of the power module.

The invention relates to a model selection method, system and device for a DC capacitor of a photovoltaic inverter and a medium, and the method comprises the steps: obtaining a loop stray inductance value of a DC-DC loop in the photovoltaic inverter through calculation; based on the real working environment parameters of the photovoltaic inverter, calculating to obtain an impulse voltage correction value of a direct current capacitor in the photovoltaic inverter; on the basis of the impact voltage correction value and the loop stray inductance value, the impact voltage of the direct-current capacitor is obtained through calculation; and calculating an output combined voltage of a programmable power supply in the durability test platform based on the impulse voltage so as to carry out a durability test on the direct-current capacitor to obtain the direct-current capacitor meeting a preset safety requirement. According to the method and the device, the real working environment parameters are used for correction on the impact voltage simulation calculation of the direct current capacitor, so that the endurance test is carried out to obtain the direct current capacitor meeting the requirement, the safe operation level of the inverter in different working environments is effectively improved, and the problem of how to select the type of the direct current capacitor of the photovoltaic inverter is solved.

The embodiment of the invention provides a supporting capacitor module, a motor controller, an electric drive system, an automobile and electronic equipment. The supporting capacitor module comprises a first current path passing through the first capacitor bank and a second current path passing through the second capacitor bank. The impedance of the first current path is smaller than that of the second current path in a first frequency interval; in a second frequency interval, the impedance of the first current path is greater than that of the second current path; the first frequency interval is smaller than the second frequency interval; a stray inductance of the first current path is greater than a stray inductance of the second current path. In the ripple current generated when the power switch is turned off, the low-frequency current component mainly passes through the first current path and is absorbed by the first capacitor group, and the high-frequency current component mainly passes through the second current path and is absorbed by the second capacitor group, so that the turn-off instantaneous voltage of the high-frequency power switch can be better stabilized.

The application provides a protection circuit, a control method thereof, a frequency conversion circuit and a power utilization device, which comprise a control circuit, an insulated gate bipolar transistor and a discharge circuit connected with the control circuit respectively, wherein the discharge circuit is also connected with the insulated gate bipolar transistor; the control circuit is used for controlling and detecting the on-off state of the insulated gate bipolar transistor, and controlling the working state of the discharge circuit according to the on-off state of the insulated gate bipolar transistor; and the discharge circuit is used for consuming the stray inductance current of the emitter of the insulated gate bipolar transistor. The stray inductance current generated by the emitter of the IGBT can be discharged through the discharge circuit by adding the discharge circuit, thereby solving the problem of the parasitic turn-on of the IGBT, ensuring the accurate turn-on of the IGBT without sacrificing the turn-on speed of the device, further improving the stability of the system operation, and prolonging the service life of the components.

This invention discloses a control method, apparatus, and device for an ANPC-type three-level inverter, including a three-level inverter circuit. The method includes: firstly, determining whether the inverter is switching from a first mode to a second mode; calculating the collector voltage value based on the DC bus voltage, the bridge arm current of the inverter circuit, a preset stray inductance, and a voltage safety margin; if the collector voltage value is less than or equal to a preset voltage value, and the first mode and the second mode meet a first preset condition, and the junction temperature of the outer transistor is greater than or equal to a first preset temperature, and / or the junction temperature of the clamping transistor connected to the outer transistor is greater than or equal to a second preset temperature, then the inner transistor is turned off and another clamping transistor is turned on; the first preset condition includes the first mode outputting a positive potential, the second mode outputting a zero potential, and the output current being greater than zero, or the first mode outputting a negative potential, the second mode outputting a zero potential, and the output current being less than zero. This method evens out the losses of transistors with higher junction temperatures to the inner transistor, preventing transistor damage.

Semiconductor devices, systems and methods are described. A system can include a controller configured to generate a control signal, a power module and a gate driver. The gate driver can be configured to drive the power device according to the control signal. The gate driver can be further configured to measure a voltage across a source wire of the power device. The gate driver can be further configured to output the voltage across the source wire to the controller. The controller can be further configured to determine, based on at least the voltage across the source wire, an overshoot voltage associated with the power device. The controller can be further configured to determine, based on at least the overshoot voltage, a peak drain-source voltage of the power device. The controller can be further configured to adjust the control signal based on the determined peak drain-source voltage.

The application discloses a semiconductor power module, a motor controller and a vehicle, and relates to the technical field of semiconductor power modules.The semiconductor power module comprises a substrate, the substrate having a first direction and a second direction which are orthogonal to each other; a first conductive area, a second conductive area, a third conductive area and a fourth conductive area which are arranged in sequence along the first direction of the substrate and are arranged on the substrate, the first conductive area, the second conductive area, the third conductive area and the fourth conductive area all extending along the second direction of the substrate, wherein the first conductive area and the third conductive area are used for accessing a direct-current signal, and the fourth conductive area is used for outputting an alternating-current signal; a first power chip and a second power chip, the first power chip being connected with the first conductive area and the second conductive area respectively, and the second power chip being connected with the second conductive area, the third conductive area and the fourth conductive area respectively. The semiconductor power module can reduce the stray inductance of the whole module and improve the heat dissipation of the module.

The application discloses a high-density integrated design method of a medium-high voltage large-capacity four-level converter, relates to the fields of power electronics and new energy, and comprises compact module layout, low-stray inductance busbar design, distributed capacitor design, a small-size radiator and high-density integrated design of the whole converter. Through the design method, the internal space of the four-level converter is optimally utilized, the stray inductance of the power circuit is inhibited, and the heat dissipation efficiency is optimized, so that the four-level converter with high reliability and high density is finally realized. The method is suitable for medium-high voltage converters based on high-voltage SiC or Si devices, and can be applied to the fields of high-power motor driving, energy storage / new energy grid connection and AC / DC interconnection.

The invention relates to a three-phase integrated power module. The three-phase integrated power module comprises a mounting plate, a supporting capacitor assembly fixed on the mounting plate, a heat dissipation unit, an IGBT module fixed on the heat dissipation unit, a current sensor connected with the IGBT module, an independent driving plate, a centralized driving plate connected with the independent driving plate, a laminated busbar connected with the supporting capacitor assembly and the IGBT module, and a protective cover. The IGBT module comprises three IGBTs, the three IGBTs are respectively used for controlling the A phase, the B phase and the C phase of an alternating current power supply from left to right, and the installation distances among the three IGBTs are the same; the laminated busbar comprises a positive busbar, an insulating layer and a negative busbar. According to the three-phase integrated power module, three-phase current equalization can be realized, stray inductance is reduced by adopting the laminated busbar, interference during working is reduced, and the three-phase integrated power module has high integration density, adaptive wide-range power and relatively high protection performance. The invention also provides a three-port energy router.

This invention discloses a power module and an energy storage converter, belonging to the field of electronic device technology. The power module includes a capacitor module, an IGBT module, a heat dissipation module, and a DC bus. The heat dissipation module has two opposing mounting surfaces. The IGBT module includes a first IGBT module and a second IGBT module symmetrically mounted on the first and second mounting surfaces. The DC bus includes a DC bus center plate, a first DC bus side output terminal, and a second DC bus side output terminal. The first and second DC bus side output terminals are respectively connected to the DC terminals of the first and second IGBT modules. The AC terminals of the first and second IGBT modules are connected to the AC input / output terminals. The DC bus center plate is connected to the capacitor module. The power module of this invention has a compact structure, effectively reducing stray inductance and lowering the overall cost.

The invention discloses a power assembly and a converter. The power assembly comprises a capacitor module, a power module and a plurality of groups of absorption capacitors, wherein a part of switching devices in the power module are connected with a capacitor busbar in the capacitor module through a wiring component, and are divided into a first switch and a second switch according to the connection relationship with polar plates with different polarities on the capacitor busbar; the mounting base body is parallel to the capacitor busbar, the first switches are arranged and fixed on the first mounting surface along a first direction, and the second switches are arranged and fixed on the second mounting surface along the first direction; each first switch and each second switch are correspondingly connected with a group of absorption capacitors, the absorption capacitors connected with the first switches are positioned on one side, deviating from the mounting base body, of the capacitor busbar, and the absorption capacitors connected with the second switches are positioned on one side, deviating from the capacitor busbar, of the mounting base body; the first switch and the second switch are further provided with wiring ends connected with the wiring component, and the wiring ends are connected with the corresponding absorption capacitors. According to the power assembly, the position of the absorption capacitor is designed, so that the effect of reducing stray inductance of the absorption capacitor can be improved.

The invention discloses a controller and a vehicle, and relates to the field of controllers, a plurality of first terminals comprise a plurality of first sub-terminals and a plurality of second sub-terminals, at least one first sub-terminal is arranged between two adjacent second sub-terminals, a power module comprises a plurality of second terminals, the number of the second terminals is the same as that of the first terminals, and the second terminals and the first terminals are in one-to-one correspondence. The second terminals are stacked and connected with the corresponding first terminals in the thickness direction of the first terminals. Therefore, the plurality of first terminals are arranged in parallel at intervals along the first direction, and the second terminals are laminated and connected with the corresponding first terminals, so that a current path can be remarkably shortened, positive and negative current loops can be tightly attached, the loop area can be remarkably reduced, stray inductance can be remarkably reduced, and the risk of voltage overshoot can be reduced. In addition, the switching speed does not need to be reduced or a buffer circuit does not need to be added, the overall efficiency of the controller can be improved, and the production cost and complexity of the controller are reduced.

This utility model relates to the field of electronic device technology, specifically to a power terminal group structure and a power semiconductor module, including a first power terminal and a second power terminal. Both the first and second power terminals are gate-shaped structures mounted on an insulating substrate. The vertical connection portions of the first and second power terminals are mirror-symmetrical structures. This utility model, through the mirror-symmetrical layout of the gate-shaped terminals, constructs a tightly coupled, low-inductance commutation circuit with minimized area. It utilizes the magnetic field cancellation effect of the reverse current to significantly suppress stray inductance, thereby reducing switching losses and voltage spikes, improving the module's switching frequency capability and power density, and enhancing system reliability.

The invention relates to a high-integration-level and high-power-density module compatible with Econodual3 packaging. The high-integration-level and high-power-density module comprises a shell, two substrates arranged in the shell, a DC positive terminal, a DC negative terminal and an AC terminal. By overlapping the positive and negative terminals, the two connection regions on the substrate are adjacent and opposite in current, a proximity effect is generated to counteract a magnetic field, and stray inductance is reduced. And a wavy water channel is designed in the bottom plate, so that the cooling liquid is easier to generate vortex, and the heat dissipation efficiency is greatly improved. A driving signal loop is optimized to obtain low switching loss, heat resistance is reduced through copper paste sintering on the back faces of the chips and the substrate and DTS sintering connection on the front faces of the chips, parallel connection of 10 chips with the size of 6 mm * 7 mm and the total area of 420 mm < 2 > sic is achieved, a current sensor is further integrated in a shell, nanosecond-level overcurrent protection can be achieved, and the heat dissipation and control requirements of high-current and high-power-density application scenes are met. The overall structure is symmetrically designed, the high-voltage part is located on the outer side, the low-voltage signal control and acquisition part is located on the inner side, the wiring design of a PCB is facilitated, and the size of the module can be compatible and matched with Econodual3 packaging.

The invention discloses a semiconductor module. The semiconductor module comprises a housing; a substrate; a plurality of inverter chips; the second low-side inverter chip upper core area comprises a fifth upper core part and a seventh wiring part, the third low-side inverter chip upper core area comprises a sixth upper core part and an eighth wiring part, and the second high-side inverter chip upper core area comprises a seventh upper core part and a ninth wiring part; the second low-side inverter chip is located on the side, closer to the first substrate part, of the second substrate part in the first direction, the third low-side inverter chip is located in the middle of the second substrate part in the first direction, and the third high-side inverter chip is located on the side, farther away from the first substrate part in the first direction, of the second substrate part. Therefore, by optimizing the layout of the second substrate part and optimizing the arrangement positions of the second low-side inverter chip, the third low-side inverter chip and the third high-side inverter chip on the second substrate part, not only can the heat dissipation performance be improved, but also the stray inductance can be reduced, so that the working performance of the semiconductor module can be improved.

The utility model relates to the technical field of electronic devices, and provides a capacitor busbar, a capacitor, a power controller and power equipment, and the capacitor busbar comprises a positive busbar which comprises a positive body and a positive terminal connected to the positive body; the cathode busbar comprises a cathode body and a cathode terminal connected to the cathode body; a part of the positive electrode body and a part of the negative electrode body are arranged in a laminated manner; part of the positive terminal is arranged in a self-lamination manner, and / or part of the negative terminal is arranged in a self-lamination manner. According to the capacitor busbar, at least part of the positive electrode body of the positive electrode busbar and at least part of the negative electrode body of the negative electrode busbar are arranged in the laminated mode, part of the positive electrode terminal is arranged in the self-laminated mode, and / or part of the negative electrode terminal is arranged in the self-laminated mode, so that the laminated area is enlarged, stray inductance in a circuit can be greatly reduced, circuit loss is reduced, and system efficiency is improved.

An apparatus and method are provided for estimating junction temperature in a metal-oxide-semiconductor field-effect transistor (MOSFET), such as a silicon carbide (SiC) MOSFET, by capturing switching transients in a source path. A measurement circuit detects a voltage across a stray inductive element during a turn-on or turn-off phase and converts the transient into a pulse having a width proportional to a rise time or fall time. A processor determines junction temperature based on the pulse width and stored correlations between transient durations and temperature. An auxiliary switch circuit may temporarily insert a gate resistance to facilitate transient capture. Aging effects are compensated by analyzing temperature-dependent variations in rise and fall times to adjust temperature estimation over the device lifetime. The system can be integrated into gate driver circuitry for real-time monitoring without substantial disruption to normal converter operation.