324 results about "Stray inductance" patented technology

The invention relates to the technical field of packaging of power electronic devices, in particular to a three-dimensional packaged double-sided heat dissipation power module. The structure comprises an upper active metal brazing base material substrate and a lower active metal brazing base material substrate, a plurality of silicon carbide MOSFET chips, conductive strips and an inserter used for fixing the chips are arranged between the upper active metal brazing base material substrate and the lower active metal brazing base material substrate, the upper half-bridge chip is annularly arranged around a direct-current positive terminal, the lower half-bridge chip is annularly arranged around a direct-current negative terminal, and heat dissipation channels are formed in the upper surface and the lower surface of each chip. The impedance of branches is controlled to be equal, the current of each branch chip is balanced, the distance and layout of the chips are optimized, the overall loop area is reduced, the parasitic stray inductance of the module is reduced, in addition, the chips and the substrate are connected in a crimping mode, the chips and the copper columns are in contact through pressure to achieve electric heat conduction, the crimping materials are graphene sheets and molybdenum sheets, and the cost is low. Good contact between the chip and the copper columns is ensured, and contact resistance and thermal resistance are reduced. According to the invention, the effects of improving the heat dissipation efficiency, reducing parasitic stray inductance, balancing the current distribution of the parallel chips, and enhancing the module reliability and the conversion efficiency are achieved.

The invention discloses a SiC MOSFET gate oxide layer degradation monitoring method based on turn-off oscillation, and the method comprises the steps: measuring the drain-source current change rate diDS / dt when a SiC MOSFET is turned off through the source stray inductance voltage vcir, and carrying out the measurement of the gate oxide layer degradation of the SiC MOSFET based on the offset of the negative temperature sensitivity of the threshold voltage VTH in the diDS / dt and the positive temperature sensitivity of the electron mobility mu. Zero temperature sensitivity of a source stray inductance voltage negative peak value vcircmin is realized by adjusting a driving resistor RG and a negative voltage VEE during turn-off, and the gate oxide layer degradation degree of the SiC MOSFET is monitored under a selected monitoring driving resistor RGM and a turn-off gate voltage VEEM. The monitoring method is high in universality and has a good monitoring effect on degradation of gate oxide layers of SiC MOSFETs of different models; the temperature influence is extremely small, so that the device can work in an environment with large temperature fluctuation; a pin of a monitored device does not need to be used as a measurement interface, so that the system invasiveness is small; the parameter measurement methods are many and mature; and the method has great online application potential.

The invention discloses an AMB substrate embedded PCB packaging integrated power module and a manufacturing method thereof, and the method comprises the steps: a power chip is mounted on an AMB substrate, a first insulating dielectric layer, a first metal layer, a second insulating dielectric layer and a second insulating metal layer are sequentially pressed on the power chip and the AMB substrate from bottom to top, and the first metal layer and the second metal layer are provided with current paths through etching; a metal conduction hole for connecting the first metal layer with the AMB substrate and the power chip is formed in the first insulating dielectric layer; and a metal conduction hole for connecting the first metal layer with the second metal layer is formed in the second insulating metal layer. According to the AMB embedded PCB power module, the integration level of an electric drive assembly is improved, meanwhile, circuit paths are reduced through PCB lamination and metal conduction hole modes, stray inductance and thermal resistance are reduced, and the AMB embedded PCB power module has the advantages of being high in power density, short in current path, small in stray inductance, low in thermal resistance and the like.

The invention discloses a low stray inductance structure of a plastic package module, which comprises a silicon carbide chip, a negative terminal, a positive terminal, an AC terminal and a plastic package body which are arranged on a lining plate, the silicon carbide chip, the negative terminal, the positive terminal and the AC terminal are wrapped by the plastic package body, the negative terminal and the positive terminal are of a laminated arrangement structure, and the silicon carbide chip, the negative terminal, the positive terminal and the AC terminal are arranged on the lining plate. And the positive terminal is fixedly connected with the negative terminal through an insulating bonding sheet to form a power terminal. The positive terminal and the negative terminal are laminated, so that the distance between copper bars is reduced to the maximum extent, and the stray inductance of a module end is reduced; and the bus capacitor matched with the module also adopts a laminated structure, so that the stray inductance at the bus capacitor is reduced.

The invention relates to the technical field of power modules, in particular to a power module efficient in heat dissipation and low in stray inductance. The power module with high heat dissipation efficiency and low stray inductance comprises a heat dissipation assembly and a DBC. The heat dissipation assembly comprises a base, a groove, an inlet, an outlet, a heat dissipation substrate and a turbulent flow belt. The spoiler unit comprises a first spoiler and a second spoiler. The two ends of each first spoiler are connected with the heat dissipation substrate and abut against the adjacent first spoilers, the arrangement direction of the multiple first spoilers is perpendicular to the arrangement direction of the inlet and the arrangement direction of the outlet, and the second spoilers are located between every two adjacent first spoilers. Cooling liquid is divided into two layers when passing through the turbulent flow belt, and one part of the cooling liquid enters the first turbulent flow plate to be compressed, so that the flowing speed is increased. And the other part of the cooling liquid enters the second spoiler, so that the heat flow exchange area of the cooling liquid and the spoiler belt is increased, and the heat dissipation efficiency is improved.

The invention discloses a power assembly and a liquid cooling converter, the power assembly comprises a capacitor module and a power module, in the capacitor module, a direct current capacitor pool comprises a first capacitor pool and a second capacitor pool, a capacitor busbar comprises a first busbar and a second busbar, and planes where the first busbar and the second busbar are located are intersected or parallel; in the power module, a mounting base body is provided with a first mounting surface and a second mounting surface which are deviated from each other, the first mounting surface is close to a first busbar, and the second mounting surface is close to a second busbar; the power tube group comprises a plurality of switching devices, and part of the switching devices are connected with the capacitor busbar through wiring components and are divided into first switches and second switches according to the connection relation with polar plates with different polarities on the capacitor busbar; each first switch is located on the first mounting surface and is connected with the first busbar through a wiring component, and each second switch is located on the second mounting surface and is connected with the second busbar through a wiring component. The structure of the power assembly can reduce stray inductance generated during operation.

The invention discloses a novel ultra-low stray inductance and double-sided heat dissipation silicon carbide power module. The novel ultra-low stray inductance and double-sided heat dissipation silicon carbide power module comprises a power module assembly, a plastic package body and a double-sided heat dissipation assembly, the power module assembly is formed by connecting a lower bridge assembly and an upper bridge assembly which are oppositely and symmetrically arranged through a molybdenum block. During working, stray inductance in the upper bridge arm and stray inductance in the lower bridge arm are counteracted, and the stray inductance of the whole module is reduced. The power module assembly is divided into an upper layer heat dissipation water channel and a lower layer heat dissipation water channel through the two double-sided heat dissipation assemblies, so that the contact area between cooling liquid and the module is doubled, the heat dissipation capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation columns which are small in area and are distributed more densely are arranged at the bottom of the high-heat chip, the heat dissipation columns which are large in area and small in number are arranged in the low-heat area, the heat dissipation columns are reasonably arranged according to the arrangement of the chip, the situation that the overall heat exchange efficiency is affected due to excessive temperature rise of local cooling liquid is avoided, and therefore the overall heat dissipation effect is guaranteed.

The invention relates to an electronic device module, a controller and a vehicle. The electronic device module comprises two functional modules, each functional module is provided with a first terminal and a second terminal, the first terminal and the second terminal extend towards the other functional module, the ends of the two first terminals are conducted, and the ends of the two second terminals are conducted; and along the thickness direction of the first terminal, the projection of the second terminal on the first terminal is at least partially accommodated in the first terminal. According to the electronic device module, the two terminals of the two functional modules are arranged between the two functional modules, and the projection of the second terminal on the first terminal is at least partially accommodated in the first terminal, so that the magnetic field generated by the current flowing in the two first terminals can be transmitted to the two functional modules. And the magnetic field generated by the current flowing to the two second terminals can offset each other, so that the generation of stray inductance is reduced.

The utility model provides a power device and a plastic package mold. The power device comprises a substrate, wherein a graphical metal layer is arranged on the surface of one side of the substrate; the bottom of the metal boss is connected to the metal layer; the chip assembly is arranged on the substrate and is adjacent to the metal boss, and the chip assembly is electrically connected with the metal layer; the power terminal is electrically connected with the metal layer; and the plastic package body wraps the substrate, the chip assembly, part of the power terminals and part of the metal bosses, the plastic package body is provided with through holes corresponding to the metal bosses, and the through holes are exposed out of the tops of the metal bosses. According to the power device provided by the embodiment of the utility model, stray inductance can be effectively reduced, so that the current stability of the device is improved.

The invention discloses a power module. The power module comprises a direct current busbar, a radiator, an IGBT module I and an IGBT module II, the IGBT module I and the IGBT module II are respectively arranged on a mounting surface I and a mounting surface II of the radiator; the direct-current busbar comprises a direct-current busbar I, a direct-current busbar II, a direct-current busbar III and a direct-current busbar IV; the two ends of a fourth direct-current busbar are connected with the first IGBT module and the second IGBT module respectively, and the middle of the fourth direct-current busbar is connected with the middle of a third direct-current busbar. The two ends of the direct current busbar III are respectively connected with the direct current busbar I and the direct current busbar II; the direct current busbar I and the mounting surface I as well as the direct current busbar II and the mounting surface II are oppositely arranged and parallel to each other; the first direct current capacitor assembly is connected with the first direct current busbar, and the second direct current capacitor assembly is connected with the second direct current busbar. The influence of stray inductance is reduced by optimizing a current path, and the voltage spike at the switching moment is reduced due to the reduction of the stray inductance, so that the switching loss is reduced.

The invention provides an electronic device, a controller and a vehicle. The electronic device comprises a first connecting terminal and a second connecting terminal, the polarity of the second connecting terminal is opposite to that of the first connecting terminal, the second connecting terminal and the first connecting terminal are arranged in a spaced mode, and in a projection plane perpendicular to the thickness direction of the second connecting terminal, the projection of the first connecting terminal falls into the projection of the second connecting terminal. The first connecting terminal and the second connecting terminal are arranged in a manner that the projection of the first connecting terminal falls into the projection of the second connecting terminal in the projection plane perpendicular to the thickness direction of the second connecting terminal, so that the first connecting terminal and the second connecting terminal are arranged side by side along the length or width of the connecting terminals; therefore, the center of the first connecting terminal and the center of the second connecting terminal are closer, so that the overlapped parts of the magnetic field around the first connecting terminal and the magnetic field around the second connecting terminal are mutually offset due to opposite magnetic field directions in the electrifying process, the stray inductance is favorably reduced, and the operation stability of the electronic device is improved.

An embedded power module with multiple chips connected in parallel comprises a first AMB board, a chip assembly, a second AMB board and a circuit board. The first AMB board comprises a first insulating layer, a first lower copper layer and a first upper copper layer. The first upper copper layer is provided with a plurality of embedding grooves, and the chip assembly comprises a chip and a copper bar. The second AMB board comprises a second insulating layer, a second lower copper layer and a second upper copper layer. The first insulating layer is welded with the first upper copper layer, the second lower copper layer is welded with the first upper copper layer, the second insulating layer and the second lower copper layer are provided with avoiding holes, and the chip assembly is located in the avoiding holes and the embedding groove, so that double paths with double-sided heat dissipation are formed, and the heat dissipation efficiency is improved. The lower surface of the copper bar is connected to the chip, the upper surface of the copper bar is connected with the second upper copper layer, the laminated structure also shortens the vertical path of current input and output, the current loop area is reduced, and the stray inductance is effectively reduced.

The invention relates to the field of semiconductors, and discloses a low stray inductance GaN device and a preparation method thereof, and the GaN device comprises a lead frame pedestal, a GaN chip and an MOS chip. The lead frame base comprises a base body, and a grid electrode, a source electrode and a drain electrode of the GaN device, and a first conductive region on the base body is electrically connected with the source electrode of the GaN device; the GaN chip is arranged on the base body, and the front face of the GaN chip is provided with a first source electrode window and a drain electrode of the GaN chip. The drain electrode of the GaN chip is electrically connected with the drain electrode of the GaN device through a first metal wire, and the grid electrode of the GaN chip is electrically connected with the first conductive region; the MOS chip is arranged in the first source electrode window, and a back drain electrode of the MOS chip is electrically connected with the first source electrode window; a source electrode on the front face of the MOS chip is electrically connected with the first conductive region through a second metal wire, and a grid electrode on the front face of the MOS chip is electrically connected with a grid electrode of the GaN device through a third metal wire. The stray inductance of the GaN device can be effectively reduced, and the high-frequency performance of the GaN device is improved.

The invention relates to a high-integration-power module system composed of plastic package single tubes and capable of expanding wiring. The high-integration-power module system comprises a PCB and at least one plastic package single tube. The plastic package single tube is embedded in the PCB; the surface of the PCB is provided with wiring terminal groups, and the wiring terminals in each wiring terminal group are electrically connected with the corresponding pins in the corresponding plastic package single tube. The power density is high, high voltage and large current can be covered, and multiple dies are connected in parallel; the expansibility is high, and the range of industrial and vehicle gauge power modules can be covered; the cost can be reduced; the integration level is high, and active and passive devices can be integrated; the parasitic stray inductance is very low and can be about 1nH, and the loss can be reduced; meanwhile, the thermal resistance can be further reduced.

The invention relates to the technical field of module packaging, and discloses a surface mounting module. The surface mounting module comprises a first substrate, a first chip, a clamping piece, a second chip, a second substrate, a first pin and a second pin. The first chip is arranged on one side of the first substrate and is electrically connected with the first substrate; the clamping piece is arranged on the side, away from the first substrate, of the first chip and electrically connected with the first chip. The second chip is arranged on one side, deviating from the first chip, of the clamping piece and is electrically connected with the clamping piece; the second substrate is arranged on one side, deviating from the clamping piece, of the second chip and is electrically connected with the second chip; the first pin is arranged on the edge of the first substrate on the same side as the first chip, and the first pin is electrically connected with the first chip through the first substrate; the second pin is arranged between the first substrate and the second substrate. According to the surface-mounted module provided by the invention, the current can be longitudinally conducted, the path is short, the area is large, the stray inductance is lower, the electric stress and loss of the surface-mounted module can be reduced, and the power is improved.

The invention provides a testing device of a power semiconductor device and a testing method based on the testing device, and relates to the field of semiconductors, and the testing device comprises a first probe loop which comprises a first probe which can be separated from or electrically contacted with a tested power semiconductor device; when the first probe is in electric contact with the tested power semiconductor device, the dynamic voltage change rate applying circuit applies dynamic voltage to the tested power semiconductor device through the first probe loop; the second probe loop comprises a second probe which is electrically contacted with the tested power semiconductor device; when the first probe is separated from the tested power semiconductor device, the parameter measuring circuit measures the electrical parameters of the tested power semiconductor device through the second probe loop; and the first stray inductance of the first probe loop is smaller than the second stray inductance of the second probe loop, so that the electrical parameters of the power semiconductor device can be accurately extracted under the condition that high dV / dt dynamic voltage is applied to the power semiconductor device.

The utility model provides a power module and electronic equipment. The power module comprises a driving assembly and a power device, the driving assembly and the power device are suitable for being arranged on the same circuit board, and the driving assembly is electrically connected with the power device. Therefore, equivalently, the driving assembly and the power device are integrated on the same circuit board, the electric connection between the driving assembly and the power device can be realized on the circuit board, the overall size of the power module can be greatly reduced, the power density of the power module is improved, and meanwhile, the driving assembly and the power device are electrically connected on the same circuit board, so that the power density of the power module is improved. Therefore, the driving path of the driving assembly for the power device can be greatly shortened, stray inductance generated by the driving path is effectively reduced, the advantages of high speed and high power of the power device are fully played, and the working performance of the power module is improved.

The invention provides a power module, a motor controller and a vehicle, and relates to the technical field of vehicles, the power module comprises a circuit board layer, a chip substrate and a heat dissipation bottom plate, the circuit board layer comprises conducting layers and insulating layers which are alternately arranged in the vertical direction, and the conducting layers and the insulating layers are arranged on the uppermost layer and the lowermost layer of the circuit board layer respectively; the lowest insulating layer in the circuit board layer is marked as a first insulating layer, the conductive layer stacked on the first insulating layer in the circuit board layer is marked as a first conductive layer, the chip substrate is embedded in the first insulating layer, the heat dissipation bottom plate is arranged at the lower end of the first insulating layer, the chip substrate comprises a power chip and a mounting substrate, and the power chip is embedded in the mounting substrate. The power chip is arranged at the upper end of the mounting substrate and is electrically connected with the first conductive layer. Thus, the occupied space of the power module can be reduced, an electrical connection path between the power chip and the driving circuit and a heat dissipation path between the power chip and the heat dissipation bottom plate can be shortened, stray inductance is reduced, and the heat dissipation effect is improved.

The invention provides a multi-chip stacked double-sided heat dissipation silicon carbide power module, and relates to the technical field of chip packaging, and the power module comprises a first DBC substrate, a second DBC substrate, a negative direct current terminal, an alternating current terminal and a positive direct current terminal, and the first DBC substrate and the second DBC substrate are sequentially provided with an upper copper pattern layer, an aluminum nitride ceramic layer and a lower conductive copper layer. Wherein the upper copper pattern layers of the first DBC substrate and the second DBC substrate are oppositely arranged, and a plurality of SiC chips are arranged on the upper copper pattern layers. An upper DBC substrate and a lower DBC substrate are integrated, the DBC substrates adopt chip stacking, the number of chips connected in parallel is increased, double-face heat dissipation is achieved, more chips can be connected in parallel, and the power density of the power module is improved. The terminals are adopted to replace most of lead bonding to reduce parasitic inductance, the terminals are designed according to circuit topology to realize interconnection between chips and interconnection between the chips and the terminals, the proposed structure can effectively realize similarity of stray inductance between the chips and between the upper sides and the lower sides of the chips, and the stray inductance of the module is reduced.

The invention relates to an electric device module, a motor controller and a vehicle, the electric device module comprises a shell, a first capacitor core body and a power module, the first capacitor core body and the power module are both installed in the shell, and the first capacitor core body is electrically connected with the power module. The first capacitor core body and the power module which are designed in an integrated mode can allow a connection path between the first capacitor core body and the power module to be shortened, so that stray inductance between the first capacitor core body and the power module can be reduced, and in addition, the first capacitor core body and the power module which are designed in an integrated mode are more compact in structure, small in overall size and convenient to carry. The occupied space is small, and the volume density and the power density are large.

This invention discloses an IGBT parallel module having at least two IGBTs connected in parallel, each IGBT configured with a paired FRD; the two parallel IGBTs are designated as first and second IGBTs, and their corresponding paired FRDs are designated as first and second FRDs, respectively. A bridging FRD is also configured between the first and second FRDs; a portion of the anode pins of the bridging FRD is connected to the anode pins of the first FRD via bonding wires, and another portion of the anode pins of the bridging FRD is connected to the anode pins of the second FRD via bonding wires; when current imbalance occurs between the first and second FRDs, the bridging FRD reduces the rated current of the first and second FRDs and performs current buffering, thereby reducing the current density of each FRD; the pin connection structure of the anode of the bridging FRD makes the stray inductance of the bridging FRD greater than that of either the first or second FRD, thereby improving the softness of the reverse recovery of the first and second FRDs. This invention can prevent failure defects caused by current concentration.

The present invention discloses a method for predicting stray inductance of a high-voltage direct current breaker submodule based on support vector regression, comprising the following steps: constructing a submodule structural model in finite element simulation software, defining three structural geometric parameters: the guide layer thickness, busbar length and connection column diameter are inputs of the submodule structural model, and the overall stray inductance of the combined high-voltage direct current breaker submodule is output of the submodule structural model; in the data space, defining a hyperplane, the hyperplane fits the experimental data obtained by training with a set fault tolerance, and at the same time maximizes the interval between the hyperplane and the data points; using an S-type kernel function to perform support vector regression on the hyperplane objective function; using cross-validation to obtain the optimal penalty parameter, fault tolerance and S-type kernel function parameter; retraining with new penalty parameters and S-type kernel function parameters to obtain the optimal stray inductance prediction result. According to the present invention, only a small volume data set is required to complete the model establishment.

The utility model discloses an SIC single-sided half-bridge module. A plurality of chips are distributed at one end of the substrate, a heat dissipation plate is fixedly arranged at the other end of the substrate, a plurality of heat dissipation supporting columns are distributed in the heat dissipation plate at intervals, the projection area of the heat dissipation supporting columns covers at least one chip, one end of each metal bonding support is connected to the substrate, and the other end of each metal bonding support is connected to the heat dissipation plate. The other end is connected to one of the chips; the chip and the substrate are electrically connected through the metal bonding support, the metal bonding support has a large contact area, heat can be effectively dispersed and transmitted to a larger area, compared with a bonding wire, the metal bonding support is lower in thermal resistance and higher in current-carrying capacity, interference among currents is facilitated due to increase of the contact area, and the current-carrying capacity of the metal bonding support is improved. Therefore, the stray inductance is reduced; according to the scheme, by arranging the position of the chip, the chip is located in the coverage range of the heat dissipation supporting columns, and therefore the heat dissipation efficiency of the module is greatly improved.

The invention belongs to the technical field of power electronics, and particularly relates to a solid-state direct-current circuit breaker module based on IGCTs, an upper pressing plate and a lower pressing plate are connected through a first screw rod, the number of first radiators is one more than that of the IGCTs, and the first radiators and the IGCTs are arranged in an overlapping mode; the number of the second radiators is one more than that of the first fast recovery diodes, and the second radiators and the first fast recovery diodes are arranged in an overlapping mode. First insulating cushion blocks are arranged between the first radiators and the lower pressing plate and between the second radiators and the lower pressing plate. Insulating cushion blocks II are arranged between the radiator I and the upper pressing plate as well as between the radiator II and the upper pressing plate and correspondingly abut against the radiator I and the radiator II through two force application mechanisms positioned on the inner side of the upper pressing plate; the piezoresistor is installed on the side, away from the first radiator, of the second radiator, the RCD protection unit is installed on the insulating plate, and the insulating plate is installed on the upper pressing plate and the lower pressing plate and located on one side of the first radiator and one side of the second radiator. The structure is compact, maintenance is easy, pressure is uniform, stray inductance is reduced, and overall stability and response speed are improved.

The application discloses a packaging structure of a power module, which comprises an insulating substrate, a plurality of base islands, a power device, a first diode, a second diode, a signal terminal, a power terminal and a plastic package body. The combination of the power device and the first diode is packaged together with the second diode, so that the stray inductance in the device is reduced, the layout and wiring are simplified, the device performance is improved, the application range of the device is wider, and the space utilization is greatly improved.

The embodiment of the utility model discloses a power module packaging structure which comprises a substrate and a power unit. Wherein the power unit comprises a first metal structure, a power device and a second metal structure which are sequentially overlapped, the second metal structure comprises a copper layer, the power unit is electrically connected with the substrate through the first metal structure, and the power unit is electrically connected with an external circuit board through the copper layer of the second metal structure. Therefore, the stray inductance of the power unit can be reduced, and the heat capacity of the power unit can be increased.

This invention relates to a testing method for an IGBT circuit system, comprising the following steps: applying a pulse signal to a single IGBT transistor; obtaining the current waveform in the overall circuit using a current probe; obtaining the voltage waveforms at locations V1, V2, and V3 of each component using a voltage probe; testing the stray inductance of the bus power supply; testing the stray inductance of the multilayer copper busbar; and testing the total stray inductance of the IGBT module under test. The advantages of this invention are: it can measure the bus capacitance, multilayer copper busbar, and total stray inductance of the IGBT module separately.

The utility model provides a semiconductor device and an IGBT chip. According to the semiconductor device, the temperature sensor is embedded between the adjacent power devices, so that the temperature of the device can be accurately monitored in real time in the device, the working temperature of the device can be timely regulated and controlled, and the first electrode layer can simultaneously cover the cellular area and a part of the temperature sensing area; therefore, the source region of the power device and the first end of the temperature sensor are short-circuited to form Kelvin contact, so that external stray inductance can be shielded, the switching speed of the device is improved, and the switching loss is reduced.

A loop-symmetrical switching device double-pulse test laminated busbar and test system, belonging to the technical field of switching device testing, solves the problem of how to reduce the stray inductance of the laminated busbar. When performing a double-pulse test on a SiC-based switching device, on the upper and lower surfaces of the laminated busbar, the current of the test loop flows from one side of the two parts divided by the insulating slot through a connecting assembly to the other side of the two parts divided by the insulating slot, thereby passing through the corresponding flexible coil current sensor to complete the collection of the loop current. On the upper and lower surfaces of the laminated busbar, the path of the equivalent current forms a loop that is symmetrical in top and bottom. The currents in the loop are equal in magnitude and opposite in direction, and the magnetic fields generated by the currents in the loop cancel each other out, thereby minimizing the current residual loop and reducing the loop stray inductance. The laminated busbar occupies a small space.

According to the packaging structure and the packaging method, in the packaging structure, a first surface and a second surface of a chip structure are electrically connected; the conductive structure is electrically connected with the first connecting end on the other side of the bonding area through the first substrate, and electric connection between the first connecting ends located on the two sides of the bonding area and between the first connecting ends located on the two sides of the bonding area and the chip structure is achieved through the first substrate, the chip structure, the conductive structure and the second substrate. The first surface and the second surface of the chip structure and the conductive structure are electrically connected in the vertical direction, so that stray inductance can be reduced; besides, a part of an electric connection path is realized through the chip structure, the second substrate and the conductive structure, so that the area occupied by the electric connection path in the first substrate can be reduced, the heat dissipation area of the first substrate is increased, the area for bonding the chip structure in the first substrate is also increased, and the heat dissipation efficiency of the first substrate is improved. The bonding number of the chip structure is correspondingly increased, the outflow capacity of the packaging structure is improved, and the performance of the packaging structure is optimized.