25457 results about "Input/output" patented technology

Circuit structures and methods of fabrication are provided for facilitating implementing a complete electronic system in a compact package. The circuit structure includes, in one embodiment, a chips-first multichip base layer with conductive structures extending therethrough. An interconnect layer is disposed over the front surface of the multichip layer and includes interconnect metallization electrically connected to contact pads of the chips and to conductive structures extending through the structural material. A redistribution layer, disposed over the back surface of the multichip layer, includes a redistribution metallization also electrically connected to conductive structures extending through the structural material. Input / output contacts are arrayed over the redistribution layer, including over the lower surfaces of at least some integrated circuit chips within the multichip layer, and are electrically connected through the redistribution metallization, conductive structures, and interconnect metallization to contact pads of the integrated circuit chips of the multichip layer.

Systems and methods for navigating hypermedia using multiple coordinated input / output device sets. Disclosed systems and methods allow a user and / or an author to control what resources are presented on which device sets (whether they are integrated or not), and provide for coordinating browsing activities to enable such a user interface to be employed across multiple independent systems. Disclosed systems and methods also support new and enriched aspects and applications of hypermedia browsing and related business activities.

A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input / output (I / O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I / O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A method of forming a wafer level stack structure, including forming a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input / output (I / O) pads, forming a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I / O pads, wherein the at least one second device chip is increased to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input / output (I / O) pads and at least one second device chip with a second plurality of I / O pads, and a common circuit board to which the wafer level stack structure is connected.

Semiconductor packages having a thin structure capable of easily discharging heat from a semiconductor chip included therein, and methods for fabricating such semiconductor packages, are disclosed. An embodiment of a semiconductor package includes a semiconductor chip having a first major surface and a second major surface, the semiconductor chip being provided at the second major surface with a plurality of input / output pads; a circuit board including a resin substrate having a first major surface and a second major surface, a first circuit pattern formed at the first major surface and provided with a plurality of ball lands, a second circuit pattern formed at the second major surface and provided with a plurality of bond fingers connected with he ball lands by conductive via holes through the resin substrate, cover coats respectively coating the first and second circuit patterns while allowing the bond fingers and the ball lands to be exposed therethrough, and a central through hole adapted to receive the semiconductor chip therein; electrical conductors that electrically connect the input / output pads of the semiconductor chip with the bond fingers of the circuit board, respectively; a resin encapsulate that covers the semiconductor chip, the electrical conductors, and at least part of the circuit board; and, a plurality of conductive balls fused on the ball lands of the circuit board, respectively.

A system for processing semiconductor substrates includes a front-end with at least two vertical levels of input / output ports for transferring substrate cassettes into or out of the housing of the processing system. The front-end also includes at least one level of storage positions, e.g., two levels of storage positions, which can be disposed between the two vertical levels of the input / output ports. The two vertical levels of storage positions can each be provided with two storage positions and each of two levels of input / output ports can be provided with accommodations for two cassettes, allowing for a total of eight cassettes to be accommodated at the front-end of the processing system. Inside the housing of the processing system, interior storage positions can be provided adjacent a wafer handling chamber and spaced apart from a cassette store having rotary platforms for housing cassettes. A single cassette handler can be used to access cassettes at each of the input / output ports and the interior storage positions.

A novel massively parallel supercomputer of hundreds of teraOPS-scale includes node architectures based upon System-On-a-Chip technology, i.e., each processing node comprises a single Application Specific Integrated Circuit (ASIC). Within each ASIC node is a plurality of processing elements each of which consists of a central processing unit (CPU) and plurality of floating point processors to enable optimal balance of computational performance, packaging density, low cost, and power and cooling requirements. The plurality of processors within a single node may be used individually or simultaneously to work on any combination of computation or communication as required by the particular algorithm being solved or executed at any point in time. The system-on-a-chip ASIC nodes are interconnected by multiple independent networks that optimally maximizes packet communications throughput and minimizes latency. In the preferred embodiment, the multiple networks include three high-speed networks for parallel algorithm message passing including a Torus, Global Tree, and a Global Asynchronous network that provides global barrier and notification functions. These multiple independent networks may be collaboratively or independently utilized according to the needs or phases of an algorithm for optimizing algorithm processing performance. For particular classes of parallel algorithms, or parts of parallel calculations, this architecture exhibits exceptional computational performance, and may be enabled to perform calculations for new classes of parallel algorithms. Additional networks are provided for external connectivity and used for Input / Output, System Management and Configuration, and Debug and Monitoring functions. Special node packaging techniques implementing midplane and other hardware devices facilitates partitioning of the supercomputer in multiple networks for optimizing supercomputing resources.

A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input / output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.