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3084 results about "Random access" patented technology

In computer science, random access (more precisely and more generally called direct access) is the ability to access an arbitrary element of a sequence in equal time or any datum from a population of addressable elements roughly as easily and efficiently as any other, no matter how many elements may be in the set. It is typically contrasted to sequential access.

Data processing system and method

A powerful, scaleable, and reconfigurable image processing system and method of processing data therein is described. This general purpose, reconfigurable engine with toroidal topology, distributed memory, and wide bandwidth I/O are capable of solving real applications at real-time speeds. The reconfigurable image processing system can be optimized to efficiently perform specialized computations, such as real-time video and audio processing. This reconfigurable image processing system provides high performance via high computational density, high memory bandwidth, and high I/O bandwidth. Generally, the reconfigurable image processing system and its control structure include a homogeneous array of 16 field programmable gate arrays (FPGA) and 16 static random access memories (SRAM) arranged in a partial torus configuration. The reconfigurable image processing system also includes a PCI bus interface chip, a clock control chip, and a datapath chip. It can be implemented in a single board. It receives data from its external environment, computes correspondence, and uses the results of the correspondence computations for various post-processing industrial applications. The reconfigurable image processing system determines correspondence by using non-parametric local transforms followed by correlation. These non-parametric local transforms include the census and rank transforms. Other embodiments involve a combination of correspondence, rectification, a left-right consistency check, and the application of an interest operator.

High speed memory control and I/O processor system

An input/output processor for speeding the input/output and memory access operations for a processor is presented. The key idea of an input/output processor is to functionally divide input/output and memory access operations tasks into a compute intensive part that is handled by the processor and an I/O or memory intensive part that is then handled by the input/output processor. An input/output processor is designed by analyzing common input/output and memory access patterns and implementing methods tailored to efficiently handle those commonly occurring patterns. One technique that an input/output processor may use is to divide memory tasks into high frequency or high-availability components and low frequency or low-availability components. After dividing a memory task in such a manner, the input/output processor then uses high-speed memory (such as SRAM) to store the high frequency and high-availability components and a slower-speed memory (such as commodity DRAM) to store the low frequency and low-availability components. Another technique used by the input/output processor is to allocate memory in such a manner that all memory bank conflicts are eliminated. By eliminating any possible memory bank conflicts, the maximum random access performance of DRAM memory technology can be achieved.

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations. A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region. The memory cell is configured to store a first data state which corresponds to a first charge in the body region in a first configuration, and a second data state which corresponds to a second charge in the body region in a second configuration. The method includes: providing the memory cell storing one of the first and second data states; and applying a positive voltage to a substrate terminal connected to the substrate beneath the buried layer, wherein when the body region is in the first state, the body region turns on a silicon controlled rectifier device of the cell and current flows through the device to maintain configuration of the memory cell in the first memory state, and wherein when the memory cell is in the second state, the body region does not turn on the silicon controlled rectifier device, current does not flow, and a blocking operation results, causing the body to maintain the second memory state.
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