410 results about "Silicon-controlled rectifier" patented technology

The invention relates to a simple and reliable touch control switch. The simple and reliable touch control switch consists of a 12-V direct-current power supply, a one-way silicon controlled rectifier 1 (SCR1) trigger circuit, a one-way silicon controlled rectifier 2 (SCR2) trigger circuit, a relay control circuit and a load RL circuit. A conventional mechanical self-locking rocker switch or a toggle switch has the defects that actions are mechanical, operating actions are different because of persons, a contact is easy to jitter, a contact is easy to ablate, abrade and the like. The touch control switch is realized by only using a small number of common components and two touch metal pieces, namely an on-load circuit is switched on by touching a touch electrode once, and an off-load circuit is switched off by touching the touch electrode once. The overall touch control switch is made of discrete components, and strong electricity can be effectively isolated from weak electricity through a relay, so that the power supply of a load can use alternating current and also can use direct current. Therefore, the touch control switch has a certain function in the field of household appliances, industrial automation, and optical, mechanical and electrical integration.

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

A high-efficiency power electronic voltage regulating device with a reclosing function is connected in series with a low-voltage line and comprises a silicon controlled bypass switch, a series power unit, a parallel power unit, an input filtering unit, an output filtering unit, a controller, a topology change-over switch, a mechanical bypass switch, an input switch, an output switch and the like. Under a normal working condition, power is supplied to a user through the silicon controlled bypass switch; through an AI pre-judgment technology, a power grid voltage drop or increase trend is pre-judged, and a series power unit is conducted in advance; a topology change-over switch is connected to form a boost or buck topology, and when the voltage of a power grid is too low or too high, the normal voltage of a user is ensured through PR closed-loop control; when the rear-end line / load breaks down, reclosing control is carried out; and voltage upper and lower limits are adjusted remotely. The device utilizes the AI pre-judgment technology, has the characteristics of stable voltage, no need of input / output commutation and the like, solves the problems of over-high and over-low voltage and automatic reclosing in fault, and improves the high power supply quality and the power supply reliability of users.

The utility model relates to the technical field of dimming and color temperature switching, in particular to an IC chip and a multi-color-temperature switching circuit. A Flash storage module, a timer module, a first analog-to-digital conversion module, a second analog-to-digital conversion module, a third analog-to-digital conversion module, a processing module, a reference generation module, a comparator module, an operational amplifier AMP1, an operational amplifier AMP2, an MOS tube Q1 and an MOS tube Q2 are arranged in an IC chip, and a current setting pin and a first color temperature state setting pin are arranged on the IC chip. The second color temperature state setting pin, the third color temperature state setting pin, the power failure detection pin, the first LED current output pin and the second LED current output pin are matched together to realize the dimming and multi-color-temperature switching functions, so that the IC chip in the scheme can be compatible with the silicon controlled rectifier dimming function and also can realize multi-color-temperature switching.

The utility model provides a communication cable detection device, comprising a detection host and a detection auxiliary machine, two ends of a communication cable to be detected are respectively connected with the detection host and the detection auxiliary machine through a first joint and a second detection joint; the detection host comprises a signal transmitting device, the communication cable to be detected comprises a shielded wire and other core wires, a light emitting diode L1i is arranged between a core wire i and the shielded wire in the detection auxiliary machine, in the detection host, the ground of the signal transmitting device is connected with the shielded wire, and the output end of the signal transmitting device is respectively connected with the core wire i in the communication cable to be detected; the grid electrode and the cathode of the silicon controlled rectifier Vi are respectively connected with the output end of the transmitting device and the core wire i in the first connector, and the anode of the silicon controlled rectifier Vi is connected with the positive electrode of the power supply; i is a natural number and is a serial number of a core wire in the communication cable to be tested. According to the utility model, the on-off of the communication line can be detected, and whether the conduction quality of the communication joint and each wire core is stable and reliable can be detected.

A semiconductor package and semiconductor die, the semiconductor package including at least a first die. The first die includes internal circuitry disposed on a substrate, electrostatic discharge (ESD) protection circuitry disposed on the substrate but laterally spaced from the internal circuitry and including a first charge dissipation element, and a first silicon controlled rectifier (SCR) laterally adjacent.

The utility model relates to the technical field of temperature control, and particularly discloses an integrated alternating current temperature controller and a temperature control system, the integrated alternating current temperature controller is formed by integrating a temperature control module, a temperature acquisition module and a silicon controlled rectifier power output adjusting module in an outer shell to form a whole body, and the temperature control module, the temperature acquisition module and the silicon controlled rectifier power output adjusting module are installed on site. The temperature control module, the temperature acquisition module and the silicon controlled rectifier power output adjusting module need wiring operation due to mutual independence in the prior art, field wiring difficulty and maintenance difficulty are reduced, the field installation process is simplified, meanwhile, the three modules are directly integrated in one shell, the situation that one shell is adopted independently is avoided, and the cost is reduced. And the size is greatly reduced, and the device is more suitable for an environment with limited space.

The utility model discloses a silicon controlled rectifier valve group with an air cooling heat dissipation assembly, which relates to the technical field of heater control and comprises an accommodating box, a plurality of groups of paired radiators are arranged in an inner cavity of the accommodating box, and silicon controlled rectifiers are clamped among the groups of radiators. The radiator is used for absorbing heat generated by the thyristor; the heat dissipation box is used for bearing the containing box, a plurality of heat dissipation fans are arranged in the heat dissipation box, the positions of all the heat dissipation fans correspond to the positions of all the sets of radiators, and the heat dissipation fans are used for blowing airflow to the heat dissipation fans; and the valve group control board is used for sending trigger signals to the silicon controlled rectifiers and controlling the on and off of the silicon controlled rectifiers. The silicon controlled rectifier valve group with the air cooling heat dissipation assembly achieves the technical effects of accurately regulating and controlling the temperature of the silicon controlled rectifier and improving the heat dissipation performance of the silicon controlled rectifier assembly.

This invention relates to a single-event latch-up evaluation method for advanced process technologies, comprising: constructing a high-energy particle incident model using the Geant4 Monte Carlo simulation tool; constructing and calibrating a three-dimensional basic device model using the TCAD simulation tool; constructing a standard cell circuit containing parasitic effects, extracting the parasitic thyristor structure of the standard cell circuit, and identifying sensitive regions of the parasitic thyristor structure; performing transient effect simulation on the identified sensitive regions based on the high-energy particle incident model to confirm whether latch-up is triggered; introducing anti-latch-up hardening measures for the sensitive regions, and performing simulation verification on the hardened standard cell circuit under the high-energy particle incident model; if the hardened standard cell circuit does not trigger latch-up, the anti-latch-up hardening measures are deemed effective. This method provides a systematic and automated solution that can fundamentally characterize the complex parasitic effects of advanced devices.

The utility model relates to the technical field of electric energy conversion, and discloses a power supply device, which comprises a shell with an accommodating cavity; the pressure regulating piece is arranged in the accommodating cavity; the heat dissipation piece is arranged in the containing cavity, and the heat dissipation piece and the pressure adjusting piece are arranged at intervals; and the rectification assembly is arranged in the accommodating cavity, the rectification assembly comprises six silicon controlled rectifier modules, the six silicon controlled rectifier modules are sequentially connected in series, and the silicon controlled rectifier modules are fixed on the heat dissipation piece and electrically connected with the voltage regulation piece. According to the utility model, the voltage regulating piece is electrically connected with the silicon controlled rectifier module, so that the input voltage can be regulated to be matched with the voltage required by the load; the silicon controlled rectifier module is adopted as a rectification structure, the fixing mode of the silicon controlled rectifier module and the heat dissipation piece is simpler, installation steps are simple, and assembly efficiency is high; the silicon-controlled module is fixed on the heat dissipation piece, so that the temperature of the silicon-controlled module can be reduced, and the service life of the silicon-controlled module is further prolonged.

The application provides an amplifier current-limiting control method for fusing power regulation and load characteristic monitoring, comprising: realizing controllable front-stage signal through differential input and band-pass clamping, establishing voltage, current and multi-point temperature monitoring and combining overvoltage detection to generate out-of-limit indication, setting voltage and current upper limit in silicon-controlled voltage regulating module and executing voltage reduction and current limiting, realizing orderly switching through front-stage shutdown and relay stable control when impedance gear is switched, keeping front-stage closed and shutting down power drive when out-of-limit continues to exist, and until monitoring quantity recovers to safe range. Through the collaborative design of "source power limiting, state monitoring, orderly switching and linkage protection", the application effectively suppresses transient impact, shortens protection response time, reduces distortion accumulation, and realizes the unity of high-power output and high reliability of wide-band multi-gear amplifier.

The embodiment of the application provides a low conduction resistance high robustness bidirectional thyristor electrostatic protection device and a manufacturing method, which comprises a P-type substrate, an N-type buried layer, a P-type well, a P-type shallow well and the like; the second N+ injection area and the third N+ injection area are directly connected through a wire, and a P-type shallow well PB with high concentration is arranged directly below the second N+ injection area and the third N+ injection area, which can play an important role in reducing the forward and reverse conduction resistance and trigger voltage of the device; the first P+ injection area and the first N+ injection area are connected together and serve as an anode of the device, and the second P+ injection area and the fourth N+ injection area are connected together and serve as a cathode of the device, so that the device can effectively protect the core circuit of the chip and avoid the risk of latching in the case of significantly reducing the conduction resistance of the device. The device can be applied to ESD protection of an I / O port with a working voltage of-5.5-5.5V.

The utility model relates to the technical field of silicon controlled rectifier dimming, in particular to a multi-color-temperature multi-power switching circuit compatible with silicon controlled rectifier dimming, which comprises a rectifying and filtering module, a silicon controlled rectifier dimming constant-current module, an MCU (Microprogrammed Control Unit) linear power supply module, a power failure detection module, a color temperature control module, a double-path PWM (Pulse-Width Modulation) dimming constant-current module and a load module, the input end of the power failure detection module is electrically connected with the rectification filtering module and used for detecting the power failure condition of the rectification filtering module, and the output end of the power failure detection module is electrically connected with the analog input end of the color temperature control module. The two pulse width modulation ends of the color temperature control module are electrically connected with the two pulse width modulation ends of the double-path PWM dimming constant-current module in a one-to-one correspondence manner, so that not only can a silicon controlled rectifier dimmer be compatible for brightness adjustment, but also the color temperature and the power can be flexibly and conveniently switched at any time; and meanwhile, the problem that the color temperature and the power are switched mistakenly due to the fact that a switch is turned on for several times due to mistakes in the actual use process is solved, and then the use experience of customers is improved.

The invention relates to the technical field of glass hot working equipment, in particular to a matrix type temperature control furnace for parallel heating and wire drawing of glass bars, which comprises a core heating temperature equalizing module, a three-dimensional staggered heating assembly, an end face protection enhancing module, a closed-loop temperature control system and a furnace body fixing and supporting module. The core heating temperature-equalizing module is an aluminum oxide or silicon carbide integrally-formed high-temperature refractory brick, a temperature-equalizing cavity and a bar channel are arranged in the core heating temperature-equalizing module, and the wall of the cavity is coated with a zirconium oxide coating. The three-dimensional staggered heating assembly comprises silicon carbide rods which are embedded through staggered mounting holes in four sides and are connected in parallel; the end face protection reinforcing module is a double-layer stainless steel plate, and a ceramic fiber heat insulation pad is clamped. The closed-loop temperature control system comprises a K-type thermocouple, a temperature itinerant detector and a temperature controller and is in linkage with a silicon controlled rectifier power adjusting power source, and the furnace body fixing and supporting module comprises a side wall protection plate and threaded lifting supporting legs. According to the technical scheme, the thermal field is uniform, temperature control is accurate, the structure is stable, multi-rod parallel wire drawing is adapted, and the production efficiency and the product uniformity are improved.

The application discloses an environment-friendly pulse ash removal control system with a self-diagnosis function and a control method thereof. The system comprises a main control module, a main output circuit and an overcurrent detection circuit. The driving input end of the main output circuit is connected with the main control module. The first output end of the main output circuit is connected with the live wire of an alternating current power supply. The second output end of the main output circuit is connected with a load. The main control module is connected with the load through an output stage thyristor. The load is connected with the output stage thyristor in a one-to-one correspondence. The main output circuit is connected with the overcurrent detection circuit through each load and the corresponding output stage thyristor. The signal output end of the overcurrent detection circuit is connected with the main control module. The overcurrent detection circuit is used for collecting the working current of the load in real time and converting the working current into a current sampling signal. The current sampling signal is compared with a preset overcurrent threshold value, and an overcurrent detection signal is output to the main control module. The system realizes fault detection on the output point, executes a protection action in time, has high inspection efficiency and discovers faults in time.

The invention provides an electrostatic discharge protection circuit. The electrostatic discharge protection circuit is coupled between the first pad and the second pad. The electrostatic discharge protection circuit comprises a substrate, a second conductive transistor structure, a resistor structure and a silicon controlled rectifier structure. The substrate has a first conductivity type. The second conductive type transistor structure is located in the substrate and is provided with a gate end. The resistive structure is in the substrate and includes a first resistor. A gate terminal of the second conductivity type transistor structure is coupled to the second pad through the resistive structure. The silicon-controlled rectifier structure is located in the substrate and is provided with a first end, a second end and a third end. A first terminal of the silicon controlled rectifier structure is coupled to the first pad, a second terminal of the silicon controlled rectifier structure is coupled to the second pad, and a third terminal of the silicon controlled rectifier structure is coupled to a gate terminal of the second conductivity type transistor structure.

The utility model discloses an intelligent temperature controller for a digital product maintenance workbench. Comprising a shell and a control module, the shell comprises a panel and a rear cover, the panel and the rear cover are detachably connected, and a key groove and a display groove are formed in the panel; the control module comprises a circuit board, the circuit board is fixed in a containing cavity jointly defined by the panel and the rear cover, the circuit board comprises a voltage judgment unit, a power conversion unit, a key unit, a display unit and a main control unit, and the voltage judgment unit, the power conversion unit, the key unit and the display unit are all electrically connected with the main control unit. A silicon controlled rectifier unit is further arranged on the circuit board and electrically connected with the main control unit, and the temperature controller is connected with the heating unit through the silicon controlled rectifier unit. By utilizing the characteristic that the silicon controlled rectifier generates current change along with the temperature change, the temperature regulation of the temperature controller is accurately controlled, the element loss for regulation is reduced, the regulation accuracy is improved, and the service life of related equipment is prolonged.

The invention relates to the technical field of converter transformers, and particularly discloses a temperature control device for a converter transformer oil paper alternating current and direct current voltage composite test, which comprises a temperature control box, a partition plate is arranged on the inner wall of the temperature control box to divide the internal space into a heating cavity and a regulation and control cavity, and a box door for taking and placing a test oil paper sample is arranged at the top end of the temperature control box; a silicon controlled rectifier power regulator is arranged in a regulation and control cavity of the temperature control box; the clamping assembly is mounted in the heating cavity; the heating assemblies are installed in the heating cavity and located on the two sides of the oiled paper sample, and the distance between the heating assemblies is adjustable; the driving assembly is mounted in the heating cavity; wherein the heating assembly is matched with the silicon controlled rectifier power regulator to construct a temperature gradient field through coarse adjustment of the total heating power. The device is provided with a controllable temperature field capable of simulating gradient change, the accuracy of subsequent experimental data is improved, and the device is provided with an elastic self-adaptive clamp.

The utility model relates to electrical engineering and can be used to protect electromagnetic voltage transformers from ferroresonant oscillations occurring in voltage transformers in distribution networks with a voltage class of 6-10 kV, alternating current with a frequency of 50 Hz with an isolated neutral.In a device for protecting voltage transformers from ferroresonance phenomena, designed with the possibility of connecting to two terminals of auxiliary secondary windings of three single-phase transformers connected in an open-delta circuit, containing a series-connected RTS thermistor, a damping resistor and an electronic switching circuit with a threshold switching characteristic, which includes a switching element in the form of a triac, the control electrode of which is connected to a control circuit including a dinistor, two resistors and a capacitor, the control electrode of the triac is connected to the control circuit through a normally closed controlled key, the RTS thermistor is equipped with a temperature sensor connected to the controlled key, and the dinistor is selected to be symmetrical.Technical result: increasing the effective operating time of a device for protecting voltage transformers from ferroresonance phenomena in the presence of modes in the network accompanied by prolonged exposure to single-phase short circuits to ground by ensuring restoration of the original operating mode. 2 fig.

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.

The invention belongs to the technical field of electrical equipment control, and particularly relates to an intelligent partner control system for remotely closing a fan coil of a water machine, which comprises an environment sensing module, a central decision module, an air conditioner host module and an air conditioner partner module, the environment sensing module collects environment information and generates a trigger signal, and the central decision-making module formulates a tail end energy-saving control strategy to generate a control instruction according to the trigger signal, encapsulates a control request and issues the control request to the air conditioner host module. The air conditioner host module sends a temperature control panel power supply on-off instruction to the air conditioner partner module in a silicon controlled rectifier communication mode through a PLC 2.0 communication link based on an existing electric power circuit and monitors execution feedback. The air conditioner partner module is installed in a non-intelligent temperature control panel bottom box, remote closing of a fan coil is achieved through a panel valve restarting and closing mechanism, and the tail end remote control reliability and the energy-saving management and control capacity are improved.

The invention discloses a silicon controlled rectifier forward and reverse bidirectional switching solid-state module, and aims to solve the problems that an existing silicon controlled rectifier switching scheme is high in short circuit risk, high in cost and complexity and difficult to maintain, and a simple relay replacement scheme is short in service life. According to the technical scheme, the device comprises a hardware circuit structure and a single-chip microcomputer control logic part, the hardware circuit structure comprises a main loop silicon controlled rectifier unit, a relay switching unit, a single-chip microcomputer control unit, a signal acquisition unit and a power supply unit, and a mixed topological structure of three main loop silicon controlled rectifiers and a common double-pole double-throw relay is adopted. And in cooperation with closed-loop control logic of load state judgment, silicon controlled rectifier turn-off, relay switching and silicon controlled rectifier conduction, current forward and reverse safe switching is realized. Two silicon controlled rectifiers for switching are omitted, so that the risk of short circuit is thoroughly avoided; the relay is switched only when the silicon controlled rectifier has no output, so that the service life is prolonged; the circuit structure is simplified, the hardware and maintenance cost is reduced, and the anti-interference capability is remarkably improved.

An electro-static protection structure includes a substrate, a transistor formed in the substrate, and a capacitor. A first pole of the transistor is connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor are connected with a discharge terminal. A first pole of the capacitor is connected with the substrate, and a second pole of the capacitor is connected with the electro-static terminal.

The utility model discloses a high-efficiency linear direct-current power supply with a transformer secondary tap capable of zero-crossing automatic switching, which is characterized in that a 220V power supply is subjected to voltage reduction through a transformer T, terminals 4, 3, 2 and 1 of the transformer respectively output different alternating-current voltages, the terminals 4 and 1 are connected with the input end of a bridge rectifier B, the terminals 3 and 2 are respectively connected with a working ground through backward diodes D6 and D5, and the working ground is connected with the working ground through the reverse diodes D6 and D5. A transistor T1, resistors R1, R2, R3 and R4, a potentiometer P1 and a voltage stabilizing diode D7 form a grid trigger circuit of a one-way silicon controlled rectifier Th1, when small and medium loads are loaded, reverse breakdown of the D7 is just achieved by adjusting the voltage of the P1 and the sliding end, T1 is conducted, the silicon controlled rectifier Th1 is cut off, and a terminal 4-2 or a terminal 1-3 of a transformer T supplies power to the loads; when the load is heavy, the Uo drops, the result is that the sliding end voltage of the P1 cannot enable the D7 to be reversely broken down, the D7 is cut off, the T1 is cut off, the Th1 is conducted, and the transformer terminal 4-1 or 1-4 provides a power supply for the load.

The application relates to a linear thyristor light-adjusting full-voltage constant-power input circuit, wherein a thyristor light adjuster is arranged in communication with an external voltage in front of an input protection circuit, a bridge rectifier circuit is arranged at the rear end of the input protection circuit, an output end of the input protection circuit is connected with a voltage conversion detection circuit, the voltage conversion detection circuit is connected with a full-voltage control circuit, a power supply resistor R11 is connected with the output end of the bridge rectifier circuit, the power supply resistor R11 is connected with the full-voltage control circuit, a series-parallel conversion circuit is connected with the full-voltage control circuit, and an isolation circuit is connected with the series-parallel conversion circuit, wherein four groups of full-balance circuits, reference position circuits, lamp string circuits and filter circuits are arranged respectively, the full-balance circuits, the reference position circuits and the lamp string circuits are connected correspondingly, the filter circuits are connected in parallel at both ends of the lamp string circuit, and the isolation circuit is connected between the full-balance circuit and the reference position circuit. The input circuit can realize full-voltage constant-power input, has strong universality and low cost.

The utility model discloses a regulating circuit for controlling ceiling fan headlights based on a resistor, which comprises a thermistor RT1, an inductor L1, a safety capacitor CX2, a silicon controlled rectifier Q2, a voltage-regulator tube D3 and a capacitor-resistor assembly, one end of the thermistor RT1 is connected with an LC end, and the other end of the thermistor RT1 is respectively connected with one end of the safety capacitor CX2 and a first port of the silicon controlled rectifier Q2; the other end of the safety capacitor CX2 is respectively connected with one end of the inductor L1 and a lamp interface, a second port of the silicon controlled rectifier Q2 is connected with the other end of the inductor L1, a third port of the silicon controlled rectifier Q2 is connected with the capacitance-resistance assembly through a voltage-regulator tube D3, and the capacitance-resistance assembly is connected with an adjustable resistor VR1. According to the design, the development difficulty of software can be reduced, and the brightness adjustment of the ceiling fan headlamp is simplified through a circuit on hardware. The resistor is used for controlling the brightness of the ceiling lamp, power limiting measures are taken on hardware, the troublesome and tedious adjustment process of software can be avoided, and adjustment is accurate. And an economic development scheme is adopted, and the development period of adjustment is shortened.

The utility model relates to the technical field of power supplies, and discloses a silicon controlled rectifier wire inlet assembly and a silicon controlled rectifier power supply, comprising a wire inlet bar, an anode silicon controlled rectifier, an anode wire outlet bar, a cathode silicon controlled rectifier and a cathode wire outlet bar. One end of the incoming line bar is provided with a connector bar. The at least two positive silicon controlled rectifiers and the at least two negative silicon controlled rectifiers are sequentially arranged in the length direction of the wire inlet row, and the positive wire outlet row and the negative wire outlet row are parallel to the wire inlet row. The two ends of each anode silicon controlled rectifier are electrically connected with the wire inlet bar and the anode wire outlet bar respectively, and an anode output part is arranged at one end, away from the connector bar, of the anode wire outlet bar in the length direction. The two ends of each negative silicon controlled rectifier are electrically connected with the wire inlet bar and the negative wire outlet bar respectively, and a negative output part is arranged at the end, away from the connector bar, of the negative wire outlet bar in the length direction. According to the silicon controlled rectifier wire inlet assembly and the silicon controlled rectifier power supply, the alternating current input distance and the direct current output distance of each positive silicon controlled rectifier or each negative silicon controlled rectifier are close, and the current sharing property is better.

The utility model relates to a high-integration double-base-island silicon controlled rectifier which comprises a lead frame, a first lead, a second lead, a third lead and two silicon controlled rectifier chips of the same specification, anodes of the two silicon controlled rectifier chips are electrically connected through the first lead, and cathodes of the two silicon controlled rectifier chips are electrically connected through the second lead. Gate poles of the two silicon controlled rectifier chips are electrically connected through a third lead, the lead frame comprises a shell, an insulating substrate is arranged at the bottom of the shell, the two silicon controlled rectifier chips are fixed on the top surface of the insulating substrate, an anode pin, a cathode pin and a gate pole pin are embedded in the shell, and the lead frame further comprises a fourth lead, a fifth lead and a sixth lead. The anode of a silicon controlled rectifier chip is electrically connected with the anode pin through a fourth lead, the cathode of the silicon controlled rectifier chip is electrically connected with the cathode pin through a fifth lead, and the gate pole of the silicon controlled rectifier chip is electrically connected with the gate pole pin. According to the invention, the condition of circuit false triggering caused by reduction of a silicon controlled rectifier gate triggering value due to overheat of the base island is reduced.

The invention discloses a silicon controlled electrostatic protection device and a preparation method thereof, a metal block is arranged on the surface of a second N well and is in Schottky contact with the metal block, so that the second N well and the metal block form a Schottky diode, and an N + injection region in the second N well serves as a cathode of the silicon controlled electrostatic protection device. The P + injection region and the first N well form a PN junction diode, and the P + injection region is used as an anode of the silicon controlled electrostatic protection device, so that the PN junction diode and the Schottky diode form a trigger path of the silicon controlled electrostatic protection device, and the characteristics of low forward conduction voltage and fast conduction time and speed of the Schottky diode are utilized; the trigger voltage of the silicon controlled electrostatic protection device is effectively reduced, the failure current is improved, the latch-up effect can be effectively avoided under the ultra-low working voltage, and meanwhile the high protection level is achieved.

A garment steamer and its power supply circuit, wherein the power supply circuit comprises a power supply module, a water pump control module, a heating wire control module and a controller. The power supply module's input and output ends are respectively connected to an alternating current (AC) mains and the controller. The heating wire control module's two ends are respectively connected to the power supply module and the controller. The water pump control module comprises a water pump, a diode D4 and a silicon controlled rectifier (SCR) Q2, wherein the SCR Q2 is used for controlling the water pump's power supply circuit. The water pump's two ends are respectively connected to the power supply module and an anode of the diode D4. The SCR Q2's control electrode is connected to the controller and the SCR Q2's cathode is grounded. The garment steamer includes the said power supply circuit.