1006 results about "Silicon-controlled rectifier" patented technology

The invention discloses an automatic identification and expansion communication method based on an RS485 interface, and relates to the technical field of industrial automation communication. The problems that an existing RS485 interface is complex in configuration, poor in protocol compatibility and high in data transmission delay are solved. According to the scheme, the terminal matched resistance and the bias current are adjusted in real time by dynamically measuring the bus equivalent distributed capacitance value, and signal attenuation caused by the capacitance effect is inhibited; a silicon controlled rectifier trigger type charge discharge mechanism is adopted to force bus residual charge to return to zero quickly, and an idle state is accurately judged in combination with a hysteresis comparator; dynamically compensating signal edge distortion and calibrating a sampling window time sequence based on a pre-emphasis filtering and Kalman filtering algorithm; multi-node stable communication is realized through capacitance value driven conflict detection threshold adaptive adjustment and a Poisson back-off model; according to the invention, the real-time performance, the anti-interference capability and the multi-node expansion reliability of RS485 communication in a complex industrial scene are obviously improved, and the debugging and maintenance cost of the system is reduced at the same time.

The invention relates to the technical field of single-phase asynchronous motors, and discloses an electronic soft start control method for a single-phase asynchronous motor, which accurately controls the start process of the motor by combining an MCU (Microprogrammed Control Unit) with an electricity metering chip and a silicon controlled rectifier technology. After the system is powered on, the MCU control unit firstly carries out initialization and reads initial circuit parameters collected by the electricity metering chip, and whether starting conditions are met or not is judged based on the parameters. Once the starting condition is confirmed to be met, the MCU sequentially triggers the auxiliary silicon controlled rectifiers to switch on the starting winding and then triggers the main silicon controlled rectifiers to switch on the main winding, so that the motor enters a running state. As the motor reaches a stable operation state, the MCU control unit closes the auxiliary silicon controlled rectifier to reduce unnecessary energy consumption, and adaptively adjusts the conduction time of the starting winding according to the actual load condition, thereby ensuring that the whole starting process is stable and efficient.

The invention relates to the technical field of single-phase asynchronous motors, and discloses a single-phase asynchronous motor starting control circuit based on an MCU and double silicon controlled rectifiers, which comprises an MCU control unit, a main silicon controlled rectifier, an auxiliary silicon controlled rectifier, an electricity metering chip and a protection circuit. Particularly, in a starting stage, the MCU control unit firstly sends a trigger signal to the auxiliary silicon controlled rectifier to enable the auxiliary silicon controlled rectifier to be in a conducting state, and the auxiliary silicon controlled rectifier is controllably connected with the starting winding to provide extra starting torque for the single-phase asynchronous motor; and after a starting condition is met, the MCU control unit sends a trigger signal to the main silicon controlled rectifier to enable the main silicon controlled rectifier to be in a conducting state, and the main silicon controlled rectifier is connected with the live wire to enable the single-phase asynchronous motor to enter a normal operation state. Thus, the starting winding is only electrified when necessary, energy loss caused by continuous heating of the PTC is avoided, and the overall energy efficiency of the system is improved.

The invention relates to a simple and reliable touch control switch. The simple and reliable touch control switch consists of a 12-V direct-current power supply, a one-way silicon controlled rectifier 1 (SCR1) trigger circuit, a one-way silicon controlled rectifier 2 (SCR2) trigger circuit, a relay control circuit and a load RL circuit. A conventional mechanical self-locking rocker switch or a toggle switch has the defects that actions are mechanical, operating actions are different because of persons, a contact is easy to jitter, a contact is easy to ablate, abrade and the like. The touch control switch is realized by only using a small number of common components and two touch metal pieces, namely an on-load circuit is switched on by touching a touch electrode once, and an off-load circuit is switched off by touching the touch electrode once. The overall touch control switch is made of discrete components, and strong electricity can be effectively isolated from weak electricity through a relay, so that the power supply of a load can use alternating current and also can use direct current. Therefore, the touch control switch has a certain function in the field of household appliances, industrial automation, and optical, mechanical and electrical integration.

The invention discloses an intelligent silicon controlled rectifier voltage conversion circuit, which relates to the technical field of voltage conversion, and comprises a photovoltaic module, a micro-control module, a power regulation module, a first voltage threshold, a second voltage threshold, a second voltage threshold, a third voltage threshold, a fourth voltage threshold, a fifth voltage threshold and a sixth voltage threshold, when the converted electric energy is larger than a first voltage threshold value, the access control module transmits the electric energy output by power regulation, superposes the electric energy output by double-path electric energy coupling and stores the superposed electric energy by the energy storage module, and when the converted electric energy is smaller than the first voltage threshold value and larger than a second voltage threshold value, the access control module outputs the superposed electric energy. And when the voltage is smaller than a second voltage threshold value, electric energy coupling is stopped, the power regulation module is controlled to carry out power regulation on the electric energy released by the energy storage module, and power is supplied to the output module. According to the intelligent silicon controlled voltage conversion circuit, the utilization rate of photovoltaic electric energy can be improved, and the voltage gain and the power supply efficiency are improved.

A transient voltage suppressor (TVS) device includes a silicon controlled rectifier (SCR) as the clamp device between a high-side steering diode and a low-side steering diode. The SCR includes alternating emitter and base regions arranged interleaving in a direction along a major surface of a semiconductor layer and orthogonal to a current path of the SCR. The TVS device realizes low capacitance and high holding voltage at the protected node.

The invention relates to the technical field of self-adaptive starting, and discloses a self-adaptive starting method and system based on voltage and current monitoring, and the method comprises the steps that an MCU (Microprogrammed Control Unit) triggers an auxiliary silicon controlled rectifier and a main silicon controlled rectifier through preset starting logic to start a motor, and carries out the high-frequency sampling of current and voltage data in real time; once starting failure is detected, short-time voltage sequences and short-time current sequences before and after a failure occurrence point can be automatically captured and stored. Then, key features are extracted from the sequences, and failure causes are determined through decision tree model analysis. And based on the analysis result and the current retry times, the MCU outputs a corresponding retry strategy to ensure that the motor can be successfully started or enter a safety mode. Thus, the reliability of motor starting is improved, subsequent fault diagnosis is supported through detailed data recording, and the maintainability and safety of the system are greatly improved.

The utility model discloses a low power consumption circuit and a refrigerator. The low power consumption circuit comprises a main control circuit; the power supply circuit comprises a live wire terminal, a zero line terminal, a filter capacitor and a rectifying circuit; the discharging circuit comprises a switching circuit, an optocoupler bidirectional silicon controlled rectifier and a discharging resistor; a switching path of the switching circuit is connected in series in a power supply loop of a light-emitting end of the optocoupler bidirectional silicon controlled rectifier, one end of a light-receiving end of the optocoupler bidirectional silicon controlled rectifier is connected with one end of the filter capacitor, and the other end is connected with the other end of the filter capacitor through the discharge resistor; and the voltage detection circuit is used for detecting the AC voltage and outputting a detection signal to the main control circuit, and the main control circuit controls the on-off of the switching circuit according to the received detection signal. According to the low-power-consumption circuit and the refrigerator provided by the utility model, when alternating current is normally supplied, the discharge resistor does not generate power consumption; when the alternating current is cut off, the discharge resistor discharges through the optocoupler bidirectional silicon controlled rectifier, and the technical problem of high power consumption of the discharge resistor during normal power supply in the prior art is solved.

The invention provides a power line damage protection device, which comprises a power supply connecting plug, a power line and a power line damage protection unit, and is characterized in that the power supply connecting plug comprises a shell, a tripping mechanism, a live wire insertion piece, a zero line insertion piece, a grounding insertion piece and a circuit board; the power line damage protection unit comprises a tripping mechanism driving circuit and an electric leakage detection circuit. The power line comprises a live wire core wire, a zero wire core wire, a ground wire core wire, an insulating layer, an insulating sheath and an electric leakage detection layer, and the insulating layer of the live wire core wire and the insulating layer of the zero wire core wire are coated with the electric leakage detection layer; when the electric leakage detection layer breaks down, current triggers a silicon controlled rectifier Q1 in the tripping mechanism driving circuit to be conducted through the electric leakage detection layer and drives a tripping mechanism in the power supply connecting plug to cut off electric connection between a power supply and a load in time, so that electricity utilization safety is ensured, and the fire risk is reduced.

The invention discloses a magnetofluid type silicon controlled rectifier radiator and a heat dissipation control method thereof. The radiator comprises a silicon controlled rectifier, a magnetic fluid chamber is attached to the outer side of the silicon controlled rectifier, the magnetic pole array is installed in the magnetic fluid chamber, and cooling fins are assembled outside the magnetic fluid chamber. When alternating current is introduced into the cavity where the magnetic fluid liquid chamber is located, the alternating current and the magnetic field interact to generate Lorentz force, the Lorentz force drives the magnetic fluid to form directional eddy current so as to achieve convective heat exchange on the silicon controlled rectifier, and heat absorbed by the magnetic fluid and air are subjected to heat exchange through the cooling fins. Junction temperature out-of-control caused by local hot spots of the silicon controlled rectifier can be solved, secondary damage of mechanical vibration of a heat dissipation system to welding spots is eliminated, and the highest junction temperature area of the silicon controlled rectifier is focused and cooled according to needs.

The invention relates to the technical field of optocouplers, in particular to a planar SSR optocoupler. Through a light emitting diode arranged on an input loop and a bidirectional photosensitive silicon controlled rectifier and a bidirectional thyristor arranged on an output loop, the bidirectional photosensitive silicon controlled rectifier can be driven by light emitted by the light emitting diode to open a gate pole of the bidirectional thyristor, and the thyristors T1 and T2 are driven to control a load LOAD, so that the product can complete the function of a relay; the number of electronic components in the circuit is smaller, the probability that the whole circuit breaks down is greatly reduced, various electronic components can be protected by means of the shading body, the influence of external environment factors on the various electronic components is reduced, and therefore the probability that the electronic components in the circuit break down can be further reduced, and the service life of the circuit is prolonged. The fault probability of the whole circuit is reduced; the problem that the circuit damage probability is increased due to the fact that an existing relay circuit needs to be composed of a plurality of electronic components is solved.

Disclosed in the present invention is a ground fault device end-of-life self-test system. An induction coil and a neutral coil are used for sensing and acquiring a ground fault leakage current signal of a live wire or a neutral wire. A trip device is used for cutting off the power supply to a load in the event of a ground fault by driving a solenoid by means of a thyristor which is triggered by an IC1 to turn on. A manual test button is used for manually testing the function of a ground fault device. A rectifying circuit is used for rectifying an alternating current (AC) and outputting same to a direct current, and providing the direct current to IC1 and IC2 direct current power supplies. A ground fault detection circuit is used for completing ground fault detection, and controlling the drive to trigger the thyristor to turn on or off. A ground fault self-test control circuit is used for controlling the testing of a ground fault detection function without affecting normal ground fault detection and protection functions.

The present invention discloses a bidirectional gate controlled thyristor structure, comprising a first P-type epitaxial layer, a second P-type epitaxial layer, a first N-type deep well doping type well region and a first N-type well doping type well region which are stacked; a first P-type high voltage doping type well region is provided on the first P-type epitaxial layer, a first P-type well doping type well region is provided inside one side of the first P-type high voltage doping type well region, a first P-type heavily doped active region is provided at the top of the other side of the first P-type high voltage doping type well region, a plurality of groups of second P-type heavily doped active regions and first N-type heavily doped active regions arranged in parallel are provided at the top of the first P-type well doping type well region, and the first P-type heavily doped active region and the plurality of groups of first P-type heavily doped active regions and first N-type heavily doped active regions arranged in parallel are isolated from each other. The ring-shaped gate controlled structure of the present invention adjusts the carrier transport path to a deeper level, solving the problems of low voltage maintenance and low current discharge efficiency of the existing thyristor structure.

The invention provides a simulation method and system with controllable split-phase voltage drop time difference, and relates to the technical field of electric power testing, and the method comprises the steps: adjusting voltage through a three-phase voltage regulator, employing a bidirectional silicon controlled rectifier and IGBT hybrid switch structure to achieve voltage drop, collecting and processing a three-phase voltage signal through a digital signal processor, and extracting zero crossing point information; and a control pulse signal with phase compensation is generated, the conduction time sequence of the switch element is controlled to realize soft switching, and the industrial computer receives and processes the signal and displays a voltage drop waveform. The split-phase voltage drop time difference can be accurately controlled, and the simulation precision and the system reliability are improved.

The invention relates to the technical field of solar cell manufacturing, and discloses a method for electroplating copper and tin grid lines on a solar cell, which comprises the following steps of: S1, copper electroplating: putting a cell piece on an electroplating tool, and putting the cell piece into a copper liquid tank for electroplating copper layers on a P surface and an N surface; wherein a very-low-frequency power supply is adopted. And S2, cleaning the copper liquid on the battery piece. S3, tin electroplating: the battery piece after the copper liquid is cleaned is placed in a tin liquid tank for electroplating tin layers on the P surface and the N surface; wherein a very-low-frequency power supply is adopted. And S4, cleaning the tin liquid on the battery piece. And S5, the cleaned battery piece is taken out, and grid line electroplating is completed. The very-low-frequency power supply is used for replacing a silicon controlled rectifier direct-current power supply, and self-developed voltage and current parameters are matched, so that the compactness and the conductivity of the HDT high-efficiency single-crystal heterojunction solar cell on an electroplated metal grid line film layer are improved, and the conversion efficiency of a cell piece is improved.

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

The invention discloses a low-voltage line intelligent voltage regulation voltage stabilizer control system, and relates to the technical field of voltage stabilizer control, an intelligent control unit judges whether the current line voltage needs voltage regulation control based on a control algorithm, if yes, a corresponding voltage regulation control instruction is generated, a silicon controlled rectifier switching module executes non-contact on and off operation, and the voltage regulation control is completed. The voltage regulation compensation module is used for carrying out voltage compensation on the basis of the output of the voltage transformation module, so that the output voltage is controlled within a preset range, and when the power grid voltage is detected to be recovered and stable within a set time, and when the power grid voltage is detected to be abnormal, the voltage regulation compensation module is used for carrying out voltage compensation on the basis of the output of the voltage transformation module. And the intelligent control unit is automatically switched into a bypass for operation. According to the control system, a voltage stabilization control framework with high response speed, three-phase independent adjustment capability, an intelligent dormancy mechanism and a complete fault protection system is constructed, and the intelligent level and the operation performance of the low-voltage power distribution system are remarkably improved.

The invention discloses a high-maintaining voltage bidirectional thyristor structure, comprising a first P-type epitaxial layer and a second P-type epitaxial layer, characterized in that it also comprises a first N-type well doping type well region, wherein the first P-type epitaxial layer is provided with a first P-type high-voltage doping type well region, a first P-type semiconductor, a first N-type heavily doped active region and a first P-type heavily doped active region arranged side by side in sequence from the inside to the outside, the first P-type high-voltage doping type well region wraps the first P-type semiconductor, and the first P-type semiconductor wraps the first N-type heavily doped active region and the first P-type heavily doped active region; and the second P-type epitaxial layer is provided with a second P-type high-voltage doping type well region, a second P-type semiconductor, a second N-type heavily doped active region and a second P-type heavily doped active region arranged side by side in sequence from the inside to the outside. The invention reduces the effective emission area of ​​the intrinsic SCR, improves the maintaining voltage, and solves the problem that the existing SCR structure is prone to cause latch-up effect.

The invention provides a silicon controlled rectifier dimming circuit zero crossing point detection method and system based on deep learning, and relates to the technical field of circuit zero crossing point detection. The method comprises the steps that firstly, working condition information and voltage and current signals of a circuit are obtained, time and phase information of an initial zero crossing point are recognized through a pre-trained deep learning model (a circuit zero crossing point detection model), and training data of the model comprise a large number of working conditions and voltage and current samples with labels; after the silicon controlled rectifier circuit starts to work, the system detects the stroboscopic condition, and compares the actual stroboscopic value with the standard value to obtain the deviation degree. And finally, based on the initial zero crossing point information and the stroboscopic deviation value, calculating final zero crossing point information for adjusting and optimizing the working state of the circuit. The double verification mechanism obviously improves the accuracy and reliability of zero crossing point detection, so that the conduction opportunity of the silicon controlled rectifier is more accurate, a more stable dimming effect is realized, and the influence of a stroboflash phenomenon on the illumination quality is reduced.

Disclosed is a method and IC, comprising: a p-type substrate layer (410), an ESD protection device (420), and a further region (430); wherein the ESD protection device comprises: a n-well region (422) having therein a n+ contact region (424) and a p+ anode contact region (426), and a trigger device (428) connected between the n+ contact region and a further p+ contact region (446) outside of the n-well, wherein the trigger device is operable, in response to an ESD event trigger, to provide a low-resistance path between the anode contact region and the further p+ contact region; wherein the further region comprises a further n-well (432), spaced apart from the ESD protection device lower-doped n-well region (422); and wherein the further n-well is operable as a cathode of an SCR comprising the anode, and the ESD protection device n-well and the p-doped substrate layer as a n- and p-intermediate nodes.

The invention is applicable to the technical field of automation control, and provides a voltage simulation test system and method of an electromagnetic valve and terminal equipment, the system comprises a parallel interface circuit and a voltage simulation device, and a bidirectional silicon controlled rectifier in the parallel interface circuit is connected in parallel to two ends of a coil of the electromagnetic valve and is used for adjusting an analog voltage value output by the voltage simulation device. The voltage simulation device comprises a power supply adaptive circuit and a control chip; the input end of the power supply self-adaptive circuit is connected with the control chip, the output end of the power supply self-adaptive circuit is connected with the parallel interface circuit, a power supply mode is determined according to the field power supply state of the field circuit where the electromagnetic valve is located, and the power supply mode is sent to the control chip; and the control chip generates a pulse width modulation driving signal according to the power supply mode, and controls the parallel interface circuit according to the pulse width modulation driving signal to perform voltage simulation test on the electromagnetic valve. The system can safely and accurately carry out the voltage simulation test on the premise of not cutting off the original field circuit where the electromagnetic valve is located.

The invention provides a low-trigger and high-maintenance silicon controlled rectifier and a manufacturing method thereof. A first N + injection region and a first P + injection region are arranged in a first N well, a third N + injection region and a second P + injection region are arranged in a first P well, and the second N + injection region is arranged between the first N well and the first P well; three electrodes corresponding to the first N + injection region, the first P + injection region and the second N + injection region are connected together to form a silicon controlled rectifier anode, and two electrodes corresponding to the third N + injection region and the second P + injection region are connected together to form a silicon controlled rectifier cathode; the first grid electrode is arranged on the surface of the first P well and connected with the cathode of the silicon controlled rectifier through an external resistor. And the external resistor, the second N + injection region and the side capacitor of the grid form an RC path, so that the effects of reducing the trigger voltage and improving the maintaining voltage are achieved.

The invention relates to the technical field of power devices, in particular to a silicon controlled rectifier device with a high-surge and high-stability triggering characteristic and a preparation method of the silicon controlled rectifier device. A protective layer is arranged between a front base region metal electrode and a front emitter region metal electrode, and a polycrystalline silicon resistance region is arranged in the protective layer and is respectively connected with electrodes on two sides for shunting. In order to solve the problem that a silicon controlled rectifier device cannot have high trigger current and high surge resistance at the same time, a parallel path is formed between positive electrodes through a polycrystalline silicon resistor region for shunting, so that the IG value of the trigger current is improved. According to the structure, the device can select a lightly doped base region and an emitter region with a wider area, so that the anti-surge capability and the voltage resistance are improved. Parameters of a polycrystalline silicon resistance region are limited, so that the polycrystalline silicon resistance region has a negative temperature coefficient, temperature compensation is formed for trigger current, and the problems that the trigger current of an existing silicon controlled rectifier changes along with temperature change, and IG current is reduced along with temperature rise are solved.

Disclosed in the present invention is a grounding fault detection apparatus having a self-checking function. The grounding fault detection apparatus comprises: an induction coil, a neutral coil, a trip unit, a manual test unit, a rectifier circuit unit, a power supply management unit, a grounding fault detection unit and a grounding fault self-checking test unit. The grounding fault detection unit receives grounding fault leakage current signals acquired by means of the induction coil and the neutral coil, then processes, amplifies, filters, converts, performs determination, etc. on effective leakage current signals, and performs control to generate silicon-controlled rectifier / trip unit driving signals; the grounding fault self-checking test unit detects a phase voltage signal, periodically generates a simulated grounding fault leakage current signal, detects whether the response of a system electric leakage detection loop and a tripping loop to a simulated grounding fault is correct, and performs determination and can output corresponding acoustic, optical and electrical alarm signals.

System and method for controlling one or more light emitting diodes. For example, the system includes: a current regulator including a first regulator terminal and a second regulator terminal, the first regulator terminal being configured to receive a diode current flowing through the one or more light emitting diodes, the current regulator being configured to generate a sensing signal representing the diode current, the second regulator terminal being configured to output the sensing signal; a bleeder controller including a first controller terminal and a second controller terminal, the first controller terminal being configured to receive the sensing signal from the second regulator terminal, the bleeder controller being configured to generate a first bleeder control signal based at least in part on the sensing signal, the second controller terminal being configured to output the first bleeder control signal.

The invention discloses a mesa silicon controlled rectifier with a novel passivation structure and a preparation method thereof, and the mesa silicon controlled rectifier comprises an N-type silicon substrate, the front surface of the N-type silicon substrate and the back surface of the N-type silicon substrate are provided with P-type short base regions, the front surface of the N-type silicon substrate is provided with an N + type emitter region, and the back surface of the N + type emitter region is provided with a P-type short base region. The front surface of the N-type silicon substrate and the back surface of the N-type silicon substrate are provided with silicon dioxide films, and the two sides of the front surface of the N-type silicon substrate and the two sides of the back surface of the N-type silicon substrate are provided with composite passivation structures. Through a four-layer composite passivation structure of oxygen-doped polycrystalline silicon, glass, LPCVD deposited silicon dioxide and polyimide, the oxygen-doped polycrystalline silicon serves as an electric field adjusting layer, surface electric field distribution can be optimized, the glass provides basic mechanical protection, thermal stress is reduced through low-temperature sintering, the LPCVD deposited silicon dioxide serves as an insulating medium, ion migration is blocked, and the surface electric field distribution can be optimized. Polyimide is used as a flexible insulating layer and covers the damaged area of the table top, so that the mechanical performance and the electrical performance reliability of the device are improved.

A high-efficiency power electronic voltage regulating device with a reclosing function is connected in series with a low-voltage line and comprises a silicon controlled bypass switch, a series power unit, a parallel power unit, an input filtering unit, an output filtering unit, a controller, a topology change-over switch, a mechanical bypass switch, an input switch, an output switch and the like. Under a normal working condition, power is supplied to a user through the silicon controlled bypass switch; through an AI pre-judgment technology, a power grid voltage drop or increase trend is pre-judged, and a series power unit is conducted in advance; a topology change-over switch is connected to form a boost or buck topology, and when the voltage of a power grid is too low or too high, the normal voltage of a user is ensured through PR closed-loop control; when the rear-end line / load breaks down, reclosing control is carried out; and voltage upper and lower limits are adjusted remotely. The device utilizes the AI pre-judgment technology, has the characteristics of stable voltage, no need of input / output commutation and the like, solves the problems of over-high and over-low voltage and automatic reclosing in fault, and improves the high power supply quality and the power supply reliability of users.

The invention provides a silicon controlled rectifier detection circuit, an LED driving system and a bleeder current control method, and the circuit comprises a bus voltage detection module which generates a pulse signal corresponding to a jump edge of a bus voltage; the pulse voltage detection module is used for generating a front switching or back switching judgment signal of the silicon controlled rectifier and triggering a reset signal; the counting module is used for counting the period of the bus voltage and resetting the counting result when the reset signal is valid; and the discharge control module generates a first control signal when the counting result is smaller than a preset value, and generates a second control signal when the counting result is larger than or equal to the preset value, the first control signal controls a subsequent circuit to perform discharge current control, and the second control signal controls the subsequent circuit to turn off the discharge current. The front-cut dimmer and the rear-cut dimmer are identified, and the compatibility of the silicon controlled rectifier is improved; misjudgment caused by a large phase angle of the silicon controlled rectifier is avoided; the anti-interference performance is high; the system is simple in design and small in chip area.

The utility model relates to the technical field of dimming and color temperature switching, in particular to an IC chip and a multi-color-temperature switching circuit. A Flash storage module, a timer module, a first analog-to-digital conversion module, a second analog-to-digital conversion module, a third analog-to-digital conversion module, a processing module, a reference generation module, a comparator module, an operational amplifier AMP1, an operational amplifier AMP2, an MOS tube Q1 and an MOS tube Q2 are arranged in an IC chip, and a current setting pin and a first color temperature state setting pin are arranged on the IC chip. The second color temperature state setting pin, the third color temperature state setting pin, the power failure detection pin, the first LED current output pin and the second LED current output pin are matched together to realize the dimming and multi-color-temperature switching functions, so that the IC chip in the scheme can be compatible with the silicon controlled rectifier dimming function and also can realize multi-color-temperature switching.

The present invention discloses a high temperature resistant bidirectional thyristor structure, comprising a P-type epitaxial layer, two first N-type well doping type well regions are formed in the middle of the P-type epitaxial layer, and the two first N-type well doping type well regions are arranged at intervals to separate the P-type epitaxial layer into a first epitaxial layer region, a second epitaxial layer region and a third epitaxial layer region; a first P-type high voltage doping type well region is provided in the injection region on the first epitaxial layer region, a first P-type well doping type well region is provided in the injection region on the first P-type high voltage doping type well region, a first P-type heavily doped active region and a first N-type heavily doped active region are provided at the top of the first P-type well doping type well region, and the first P-type heavily doped active region and the first N-type heavily doped active region are arranged in isolation. The present invention adjusts the ESD discharge path to a deeper level of the chip through the design of slotting in the base region, which is beneficial to its heat dissipation and reduces the current discharge attenuation degree under high temperature.