151 results about "Zener diode" patented technology

A power supply circuit of an embodiment includes a first transistor including a source connected to an input terminal, and a gate connected to a first node; a second transistor including a drain connected to a drain of the first transistor, and a source connected to an output terminal; a third transistor including a source connected to the input terminal, a drain connected to the first node, and a gate connected to a second node; and a Zener diode including an anode connected to the input terminal, and a cathode connected to the second node.

The present application provides a kind of driving device, prevent the overcurrent detection input terminal voltage due to the current flowing in the chip peripheral ground wiring rises and thus generates the false operation of overcurrent detection circuit.In the IS terminal of overcurrent detection circuit arranged in the position far away from GND terminal and the B point of chip peripheral ground wiring (11) are provided as terminal protection circuit transistor MN1, in the CFO terminal arranged in the position further away from GND terminal and the C point of chip peripheral ground wiring (11) are provided as terminal protection circuit zener diode ZD1.In addition, the input of the acceptance threshold voltage of comparator COMP_IS and the B point of chip peripheral ground wiring (11) are provided as potential offset element transistor MN2.Between thus, when the potential of B point rises due to the overvoltage applied to CFO terminal, by making the two input terminals of comparator COMP_IS also rise, thereby preventing false operation.

The utility model discloses a dual-optocoupler protection circuit, which comprises a chip U1, an optocoupler U2 and an optocoupler U3, and is characterized in that the FB end of the chip U1 is connected with the fourth pin of the optocoupler U2 and the fourth pin of the optocoupler U3; a pin 3 of the optocoupler U2 is connected with a pin 3 of the optocoupler U3; a pin 2 of the optocoupler U2 is connected with a pin 1 of the optocoupler U3; a pin 1 of the optocoupler U2 is connected with a resistor R121 and a resistor R98, the resistor R121 is connected with a voltage stabilizing diode ZD6, and the voltage stabilizing diode ZD6 is connected with a resistor R120; and the resistor R98 is connected with the pin 2 of the optocoupler U2 and the pin 1 of the optocoupler U3. According to the utility model, the damage of the power supply caused by failure of a single device can be met, the power supply and the personal safety of a user can be better protected, and the protection circuit can be better applied to the market due to more and more safety accidents caused by failure of a charger and higher and higher requirements on the safety of the charger at present.

The utility model particularly relates to an active LED afterglow removing circuit, which comprises a VIN end, a grounding end GND, a light emitting diode LED1, a first field effect transistor Q1, a second field effect transistor Q2 and an ON / OFF control end, and is characterized in that the VIN end is connected to one end of a third resistor R3; the cathode of the LED 1 is connected with the pin 3 of the second field effect transistor Q2; a pin 1 of the second field effect transistor Q2 is connected to a pin 2 of the first field effect transistor Q1; a pin 3 of the first field effect transistor Q1 is connected with a grounding end GND; the first pin of the first field effect transistor Q1 is connected with an ON / OFF control end, a first capacitor C1 and a voltage stabilizing diode Z1 are connected between the first pin and the third pin of the second field effect transistor Q2 in parallel, the afterglow phenomenon is thoroughly eliminated through an active discharge mechanism, and the problems that a traditional passive scheme is delayed in response and high in cost are solved. The circuit is simple in structure and high in compatibility, and has the advantages of low cost and high reliability.

The application discloses a current monitoring circuit and a monitoring method. The current monitoring circuit comprises a Zener diode, an operational amplifier, a first MOSFET, a second MOSFET and a current mirror circuit. The current monitoring circuit and the monitoring method do not need to use a single-chip integrated or customized power tube, and accurately provide a current proportional to a current flowing through a required monitoring power switch for system monitoring.

This invention provides a high-voltage suppression and voltage regulation protection circuit, relating to the field of circuit protection technology. The circuit includes a high-voltage discharge elimination circuit, a π-type composite EMI filter network circuit, and a voltage regulator circuit connected in sequence, with terminals at both the input and output ends. The high-voltage discharge elimination circuit consists of four DC spark discharge tubes and two varistors. The π-type composite EMI filter network circuit includes two high-voltage ceramic capacitors, two inductors, and one common-mode inductor. The voltage regulator circuit consists of an electrolytic capacitor and a Zener diode. Through the synergistic effect of the front-stage high-voltage elimination, intermediate-stage filtering, and rear-stage voltage regulation, the circuit achieves suppression and voltage regulation protection against high-voltage interference ranging from kilovolts to tens of kilovolts, ensuring continuous normal operation of the circuit system under harsh high-voltage environments.

This invention discloses a primary-side feedback output no-load voltage stabilization circuit, including a transformer T1. One end of the N1 coil of the transformer T1 is connected to the voltage feedback pin of the main control unit U1, and the other end is grounded. One end of the N2 coil of the transformer T1 is connected to the collector of the transistor Q2 through a diode D2, and the VCC voltage output from the emitter is supplied to the VDD terminal of the main control unit U2. The cathode of the diode D2 is grounded through a capacitor EC1, and the cathode is also connected to the voltage terminal through resistors R9 and R10 respectively. The cathode of the diode D2 is also connected to the base of the transistor Q2 through a resistor R11, and the base is also grounded through a Zener diode ZD1.

A Zener diode includes a P + anode, a polysilicon mesh ring on a surface of a semiconductor substrate and surrounding the P + anode, an N + cathode opposite the P + anode with respect to the polysilicon mesh ring, an outer spacer on an outer portion of the polysilicon mesh ring adjacent the N + cathode, and an inner spacer located on an inner portion of the polysilicon mesh ring adjacent to the P + anode. The polysilicon mesh ring may be a polysilicon layer on a TEOS layer. The Zener diode may be located in a lightly doped N-well, wherein a Zener junction includes an N-well high region adjacent to and below the P + anode. The Zener diode may be located in a highly doped N-well, where the Zener junction includes a P-structure formed in the highly doped N-well in an upper portion of the semiconductor substrate and adjacent to and surrounding the P + anode.

This application relates to the field of analog integrated circuit technology and discloses a voltage reference circuit suitable for high power supply voltages. The circuit replaces the Zener diode pre-regulation architecture with a voltage-limiting loop biased by a positive temperature coefficient current source. A stable low power supply voltage is generated by forming a negative feedback loop through a high-voltage regulating transistor and a feedback sampling transistor. A reference voltage is generated by subtracting the gate-source voltages of two sets of transistors with different threshold voltages. Furthermore, it incorporates a frequency-band coordinated power supply rejection ratio enhancement module, a pre-charging and automatic loop exit startup acceleration module, and a dual-branch complementary control trimming module. This circuit achieves a comprehensive performance of small area, low power consumption, high power supply rejection ratio, and fast startup.

This utility model discloses a high-voltage protection control circuit, including a first connector CN1 and a second connector CN2. Between the first connector CN1 and the second connector CN2, there are also: a second Zener diode D2, a first Zener diode D1, a second transistor Q2, a first transistor Q1, a switching transistor Q3, a voltage divider resistor R8, and a step-down chip U1. This utility model utilizes the second Zener diode D2 and the first Zener diode D1 to implement the avalanche effect, directly driving the second transistor Q2 and the first transistor Q1, and delaying overvoltage response, resulting in a significant improvement in response speed. Furthermore, the combination of the second Zener diode D2, the first Zener diode D1, the second transistor Q2, the first transistor Q1, and the switching transistor Q3 implements a complete protection function, reducing the overall circuit area and achieving high circuit integration. Moreover, it eliminates the need for a dedicated IC chip for control, reducing production costs.

The utility model discloses a high-efficiency linear direct-current power supply with a transformer secondary tap capable of zero-crossing automatic switching, which is characterized in that a 220V power supply is subjected to voltage reduction through a transformer T, terminals 4, 3, 2 and 1 of the transformer respectively output different alternating-current voltages, the terminals 4 and 1 are connected with the input end of a bridge rectifier B, the terminals 3 and 2 are respectively connected with a working ground through backward diodes D6 and D5, and the working ground is connected with the working ground through the reverse diodes D6 and D5. A transistor T1, resistors R1, R2, R3 and R4, a potentiometer P1 and a voltage stabilizing diode D7 form a grid trigger circuit of a one-way silicon controlled rectifier Th1, when small and medium loads are loaded, reverse breakdown of the D7 is just achieved by adjusting the voltage of the P1 and the sliding end, T1 is conducted, the silicon controlled rectifier Th1 is cut off, and a terminal 4-2 or a terminal 1-3 of a transformer T supplies power to the loads; when the load is heavy, the Uo drops, the result is that the sliding end voltage of the P1 cannot enable the D7 to be reversely broken down, the D7 is cut off, the T1 is cut off, the Th1 is conducted, and the transformer terminal 4-1 or 1-4 provides a power supply for the load.

The utility model relates to the technical field of light-emitting semiconductors, and particularly discloses a vertical LED light-emitting device, which comprises a metal substrate, a light-emitting diode, a Zener diode, a first bonding wire, a second bonding wire and a packaging adhesive layer, the light-emitting diode is fixed above the metal substrate, the Zener diode is fixed on one side of the upper surface of the light-emitting diode, one end of the first bonding wire is connected with an electrode at one end of the metal substrate, the other end of the first bonding wire is connected with the light-emitting diode, and the other end of the first bonding wire is connected with the metal substrate. One end of the second bonding wire is connected with an electrode at the other end of the metal substrate, and the other end of the second bonding wire is connected with the Zener diode; and the packaging adhesive layer covers the metal substrate, the light emitting diode, the Zener diode, the first bonding wire and the second bonding wire. According to the utility model, through the design that the Zener diode is connected with the light emitting diode in parallel, an extra electrostatic protection mechanism is provided for the LED.

This application provides a multiplier circuit with small area and low temperature drift. The multiplier circuit includes a first voltage module for receiving a first input current I1 and a second input current I2, and generating a first control voltage related to the first input current I1 and the second input current I2; a current module including a first resistor R1 and a first Zener diode D1 for generating a reference current IM1 in the circuit, the reference current IM1 being related to the first Zener diode D1 and the first resistor R1; a second voltage module connected to the first voltage module and the current module for generating a second control voltage related to the reference current IM1 and the output current IM2 driven by it, the second control voltage and the first control voltage satisfying a specific formula; and an output module including a second resistor R2 for converting the output current IM2 into an output voltage V. O And make the output voltage V O It satisfies a specific formula.

Embodiments of this application relate to a Zener diode, a method for preparing a Zener diode, and a semiconductor integrated structure. A first conductivity-type body region is set to include a plurality of sub-body regions, and the sub-body regions are spaced away from each other in a first conductivity-type well region; in a direction perpendicular to a plane where a semiconductor material layer is located, a projection of a second conductivity-type doped region covers and exceeds projections of outer contours of the plurality of sub-body regions; and at a position where the projection of the second conductivity-type doped region exceeds the projections of the outer contours of the plurality of sub-body regions and a position spaced between the sub-body regions, the second conductivity-type doped region is connected to the first conductivity-type well region. In this way, an operating current of the Zener diode can be increased without increasing a reverse leakage current of the Zener diode, thereby optimizing performance of the Zener diode.

The invention relates to a device for protecting an electrical circuit coupled to a power supply network, in particular a vehicle power supply network, from overvoltage, comprising: an electrical input for applying an input voltage; an electrical output for providing an output voltage to a power supply network or a connected circuit; and an electrical protection circuit having a detection section, a semiconductor switch and a limiting section, the semiconductor switch being arranged between the electrical input and the electrical output and being actuatable in such a way that the output voltage output at the electrical output can be interrupted, wherein the detection section is configured to actuate the semiconductor switch by means of an actuation voltage when a threshold value of the input voltage is reached in such a way that the output of the output voltage is interrupted, the detection section having a voltage threshold detection element, such as a Zener diode, and wherein the limit section is configured to limit the output voltage when the output voltage is interrupted. The control voltage for the semiconductor switch is limited.

A lighting device (101) for a motor vehicle comprising: a control unit (107) to which a light module (106) is connected; a series connection of bridgeable semiconductor light sources (44-48), wherein the lighting device (101) has a headlight housing (102) in which two light modules (105, 106) are arranged and supplied with electrical energy by the control unit (107) which is remotely connected via connecting lines (110); wherein the control unit (107) is arranged on the outside of the headlight housing (102) in a control unit housing (108); characterized in that the protection circuit (2) is designed to protect the series connection of the bridgeable semiconductor light sources (44-48); that the protection circuit (2) comprises a series connection of a current measuring element (8) and an actuator (10); and that a Zener diode (18) is connected between an actuator terminal (22) of the actuator (10) and an input. (9) of the actuator (10) is arranged,that the control unit (107):- has an input with two input terminals (26, 28) which can be connected to the vehicle's electrical system via a plug / socket element (109),- includes a buck converter comprising a switch (34), a diode (36) and a coil (38), and- has an output capacitor (40) and an input capacitor (42).

An anti-fuse memory cell, an anti-fuse memory array and a memory, the anti-fuse memory cell comprising: an anti-fuse structure having a first end and a second end; the selection transistor comprises a drain electrode and a source electrode, and one of the drain electrode and the source electrode is coupled with the first end of the anti-fuse structure; and the anode of the voltage stabilizing diode is coupled with the other one of the drain electrode and the source electrode. According to the embodiment of the invention, the voltage stabilizing diode is additionally arranged in the anti-fuse memory cell and is connected with the selection transistor in series, the voltage stabilizing diode can provide stable voltage for the selection transistor, interference caused by current fluctuation can be resisted, correspondingly, the selection transistor can provide stable current for the anti-fuse structure, and the anti-fuse memory cell is more stable in performance. Therefore, the programming reliability of the anti-fuse structure is improved.

A circuit arrangement for discharging an electrical component includes a photovoltaic isolation unit, which is arranged on a first side between a first input terminal and a second input terminal and is arranged on a second side between a first intermediate node and a second intermediate node. The circuit arrangement includes a first Zener diode arranged between the first intermediate node and the second intermediate node; a first resistor unit arranged between the first intermediate node and a first connection point; an intermediate circuit arranged between the first connection point, a second connection point, a third connection point and a fourth connection point; a first switching element arranged between the third connection point, a third intermediate node and a first output terminal; and a first resistor arranged between a first voltage terminal and the third intermediate node.

This utility model relates to a battery power meter circuit for a smart door lock based on a single-cell power meter chip, including a power meter circuit, a Zener diode, and a low-voltage reminder circuit. The power meter circuit includes a single-cell power meter chip U6 and a first resistor and a second resistor connected in series. The sampling pin of the single-cell power meter chip U6 is connected to the series node of the first and second resistors. The non-series node of the first resistor and the low-voltage reminder circuit are both connected to the positive terminal of the dual-cell battery. The non-series node of the second resistor is grounded. The sampling pin of the single-cell power meter chip U6 is connected to the negative terminal of the Zener diode, and the positive terminal of the Zener diode is grounded. This design reduces product costs while meeting the requirement of accurate power calculation, preventing damage to the single-cell power meter chip U6 from overvoltage or high-voltage pulses, extending the service life of the single-cell power meter chip U6, and prompting the user to charge the dual-cell battery of the smart door lock when the battery is low on voltage.

According to the invention, an integrated circuit arrangement is formed by reducing the injection of charge carriers into a semiconductor substrate. The circuit arrangement comprises a first and second half-bridge connected as a full bridge, wherein the drain terminals of the first transistors and the source terminals of the second transistors are electrically connected. The two parallel-connected source terminals of the second transistors are connected to the first terminal of a two-terminal resistor, while the second terminal of the resistor provides a connection for a negative supply voltage or ground potential. A Zener diode is connected between the source terminal (supply voltage) and the gate terminal of at least one of the first MOS transistors. The transistors are surrounded by at least one guard ring.The guard ring is implemented as a contacted N or P well on the P or N substrate. Around the guard ring, further P or N wells, insulated by means of deep trench structures, are arranged.

A limiting circuit, particularly for a power supply, includes a first reverse-polarized Zener diode connected and configured to limit a voltage between two output terminals depending on a first breakdown voltage, a second reverse-polarized Zener connected and configured to limit a voltage between two output terminals depending on a second breakdown voltage, a semiconductor switch coupled in series with the second Zener diode to open or close depending on a switching signal, a first shunt resistor coupled in a load path and with the first and second Zener diodes to carry the load current and the currents flowing through the first and second Zener diodes, and a comparating device configured to generate the switching signal depending on a voltage drop over the first shunt resistor.

This invention discloses a voltage regulator circuit based on current feedback; it includes a sampling module, an adjustment module, and a feedback control module, specifically including high-voltage MOSFETs HV_PM1, HV_PM2, HV_PM3, and HV_NM1, constant-voltage MOSFETs NM1, NM2, NM3, and NM4, a Zener diode Z1, resistors R0, R1, and R3, and bias currents I1, I2, and I3. This invention operates when the input voltage is lower than the reverse breakdown voltage V of the Zener diode Z1. Z1 When the input voltage is high, the output voltage equals the input voltage, resulting in a small voltage drop. At high input voltages, the current flowing through the Zener diode Z1 is sampled, and the gate-source voltage difference of the MOSFET is adjusted via a feedback loop. This changes the on-resistance of the MOSFET, stabilizing the output voltage VOUT at the reverse breakdown voltage V0 of the Zener diode Z1. Z1 Approximately 5.5V.

An overvoltage protection device and overvoltage protection method are provided. An example overvoltage protection device includes, between a first terminal and a second terminal: a first Zener diode; a serial assembly comprising a varistor, a first capacitor and a thyristor, having its gate terminal coupled to the first terminal; and a first resistor parallelly arranged with the first capacitor. An example overvoltage protection method uses the overvoltage protection device.

This invention discloses a wide input range pre-regulated power supply circuit, belonging to the field of integrated circuits, including NMOS transistors MN1 to MN3, diodes D1 to D2, resistors R1 to R6, capacitors C1 to C2, and Zener transistors ZN1 to ZN6. The circuit's pre-regulated voltage is achieved through a Zener reference source, and its voltage is approximately equal to the breakdown voltage of Zener diode ZN6. NMOS transistors MN1 to MN3 are connected in series to increase the circuit's maximum input voltage. Diodes D1 and D2 are connected in series with Zener diode ZN1 to generate the gate bias voltage of NMOS transistor MN3. Resistor R1 puts Zener diode ZN1 into a breakdown state, and capacitor C1 provides filtering for the gate voltage of NMOS transistor MN3. Resistors R2, R3, and R4 put Zener diode ZN2 into a breakdown state and generate the gate bias voltages of NMOS transistors MN1 and MN2. Zener diodes ZN3, ZN4, and ZN5 clamp the gate-source voltages of NMOS transistors MN1, MN2, and MN3 to approximately 5V, respectively, to prevent the NMOS devices from failing due to gate-source breakdown. Resistor R5 limits the current in the main pre-regulated voltage path of the Zener diodes. Resistor R6 provides a DC load for the pre-regulated voltage, and capacitor C2 filters the pre-regulated voltage.

A protection circuit for use with a power source includes a Zener diode, a first resistor, and a second resistor, which together define its maximum voltage threshold. The power source is configured to provide an input voltage to an electrical load. The protection circuit further includes a shorting device and a current-limiting safety device. When the input voltage is less than the maximum voltage threshold, the shorting device is maintained in an off-state, causing the input voltage to be provided to the electrical load. When the input voltage is greater than or equal to the maximum voltage threshold, the shorting device switches to the on-state and electrically shorts the power source to a ground, causing the current-limiting safety device to break an electrical connection between the power source and an input point electrically connected to the electrical load, such that the electrical load is electrically disconnected from the power source.

This invention discloses a gate ESD protection circuit for monolithic GaN devices, comprising an optocoupler switching network consisting of several resistors and transistor optocouplers, a GaN power device, and a low-resistance bleeder branch. The low-resistance bleeder branch is connected to the power supply / ESD current source via a Zener diode, providing an ESD current discharge path in the early stages of an ESD event. This compensates for the shortcomings of the transistor optocoupler not being fully open in the early stages of an ESD event and the relatively weak bleedering capability of the GaN power device. After the GaN power device's gate turn-on voltage stabilizes, it assumes the primary bleedering responsibility, ensuring a sufficiently strong ESD current discharge capability when ESD stress is applied to the gate of the protected device. Simultaneously, the presence of the low-resistance bleeder branch enables the protection circuit to react rapidly in the early stages of an ESD event, addressing the problem of poor gate ESD robustness in enhancement-mode GaN devices.

The present application provides an electrical circuit having an intrinsically safe explosion-proof structure that can increase the capacitance of the circuit while suppressing the influence on the function of the circuit. The electrical circuit includes: a plurality of functional blocks (2-1 to 2-3, 3-1 to 3-6) that are circuits for realizing a prescribed function; Zener diodes (D1 to D8) that are provided in parallel with a circuit capacitance (Cs2, Cs4 to Cs6) among circuit capacitances (Cs1 to Cs10) connected to a power supply line or a signal line of each of the plurality of functional blocks (2-1 to 2-3, 3-1 to 3-6), the circuit capacitance (Cs2, Cs4 to Cs6) being connected to a power supply line on a boundary line that separates the entire electrical circuit into a voltage side higher than a Zener voltage and a voltage side below the Zener voltage or a signal line on the boundary line; and current limiting resistors (Rp1 to Rp4) that are inserted in series at a more upstream side than the Zener diodes (D1 to D8) of the power supply line on the boundary line or the signal line on the boundary line.

A switch arrangement comprising: a bi-directional metal-oxide-semiconductor, MOS, switch having a drain, source and gate and a body; a first circuit coupled between the drain, the gate and the source for providing electrostatic discharge protection; a first transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the gate of the MOS switch; and a second circuit for providing electrostatic discharge protection comprising a first diode of Zener diode type having an anode coupled to the body of the MOS switch and a cathode coupled to the source, and a second transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the anode of the first diode.

The invention provides a Zener diode and a preparation method thereof. The Zener diode comprises a substrate, an embedded layer, a diffusion layer and an epitaxial layer, the embedded layer is formed in at least a partial region of one setting surface of the substrate; the epitaxial layer is at least formed on the embedded layer; the diffusion layer is at least formed on the epitaxial layer; wherein a certain distance is formed between the diffusion layer and the embedded layer.

The utility model discloses a vehicle-mounted TBOX low-voltage starting prevention switching circuit which is composed of a power input circuit, a protection circuit, a decoupling circuit, a fuse, a slow starting circuit, an MOS switching tube circuit, a filter circuit, a decoupling circuit, a low-voltage starting prevention circuit and a system main power supply DC / DC circuit. The protection circuit comprises an electrostatic, filtering and anti-surge circuit; the low-voltage starting prevention circuit is controlled to start by elements such as a Zener diode. When the vehicle-mounted battery supplies power, the circuit is subjected to multiple processing, and when the voltage is lower than a safety threshold value, the TBOX communication terminal is prevented from being started, battery discharging is slowed down, premature over-discharging is avoided, meanwhile, the problems that the input voltage is too low, and a power supply is frequently started for power failure are solved, and stable operation of the vehicle-mounted battery and a TBOX system is effectively guaranteed.