420 results about "Zener diode" patented technology

A transient voltage surge protection circuit includes a discharge transistor having a drain coupled to a first point of a voltage input bus, and a source coupled to ground; an RC string having a first capacitor and a first resistor coupled in series; a first charge transistor having a drain coupled to the drain of the discharge transistor, a source coupled to the gate of the discharge transistor, and a gate coupled to a mid-point between the first capacitor and the first resistor; a second charge transistor having a drain coupled to the drain of the discharge transistor and a gate coupled to the gate of the first charge transistor; a Zener diode string coupled to a second point of the voltage input bus and coupled to a third and fourth resistors in series. A midpoint between the third and fourth resistors is coupled to the second resistor.

The invention discloses an energy storage PCS alternating current relay power supply switching circuit, a control circuit and a method, and belongs to the technical field of energy storage converters. Wherein the power supply switching circuit is used for reducing the maintaining voltage while maintaining reliable closing of the relay, and on / off of the first field effect transistor Q2 and the second field effect transistor Q3 is based on the state of the switching tube Q1; the first field effect transistor Q2 controls the state of the Zener diode ZD1 through state switching and is used for controlling the potential of one end of the coil when the alternating current relay is in the pull-in and holding state. And the main control module is used for outputting an alternating-current relay control signal and controlling the power supply switching circuit. According to the power supply switching circuit, reliable closing of the alternating-current relay is ensured, and meanwhile, the maintaining voltage of the coil is reduced, so that the power supply loss of the alternating-current relay is reduced; and meanwhile, load impact current and impact voltage during actuation of the alternating-current relay are reduced through a control method, so that adhesion of the alternating-current relay and interference on voltage of a power supply are avoided.

An X-ray fluorescence analyzer is provided with an X-ray tube that irradiates primary X-rays, a first power supply that supplies a filament current, a second power supply that applies a tube voltage, a first diode connected to a power line, a Zener diode connected to the ground terminal, and an operational amplifier having an inverting input terminal, and a non-inverting input terminal. The non-inverting input terminal is connected to the power line, and the output terminal is connected to the second terminal and the inverting input terminal.

The invention discloses an active power synthesis network of a micro-strip and waveguide hybrid architecture. The active power synthesis network comprises a micro-strip power division network, a micro-strip power amplification circuit, a waveguide power combiner and a power-on / power-off sequence control circuit. The power synthesis network is designed by adopting a micro-strip and waveguide hybrid architecture, so that the overall size can be greatly reduced on the premise of ensuring the power capacity of the power synthesis network; the power-on / power-off sequence control circuit based on the Zener diode is designed, the power amplification chip can be effectively protected and prevented from being damaged due to the wrong power-on / power-off sequence, meanwhile, the number of power needing to be supplied to the power amplification chip at the same time is reduced, and the use complexity of the power synthesis module is reduced.

The utility model discloses an intrinsic safety power supply circuit and a fuel electrochemical oxygen analyzer. The intrinsic safety power supply circuit comprises a first MOS tube, a first capacitor, a second capacitor, a first resistor, a first Schottky diode, a first Zener diode and a second Zener diode, the power supply module of the fuel electrochemical oxygen analyzer comprises the intrinsic safety power supply circuit and further comprises a sensor module, an AD conversion module, a key module, a single chip microcomputer module, an analog output module and a display driving module which are connected with the power supply module, and the single chip microcomputer module is connected with the AD conversion module, the key module, the analog output module and the display driving module. The sensor module is connected with the AD conversion module, and the analog output module is connected with external equipment; the fuel electrochemical oxygen analyzer adopts the intrinsically safe power supply circuit to limit the working current and voltage in the circuit so as to control the power consumption of the whole machine, so that explosion prevention is realized, and the fuel electrochemical oxygen analyzer can measure the oxygen concentration in a flammable and explosive environment.

The utility model relates to the technical field of electronic circuits, and discloses a protection circuit and communication equipment, and the protection circuit comprises a transmission module and a control module. The input end of the transmission module is used for receiving an electric signal, and the transmission module is used for transmitting the electric signal from the input end to the output end in a conducting state; the control module comprises a control unit and a switch unit; the control unit comprises a voltage stabilizing tube; the anode of the voltage-regulator tube is connected with the first end of the switch unit, the cathode of the voltage-regulator tube is connected with the output end of the transmission module, the second end of the switch unit is connected with the control end of the transmission module and a voltage source, and the third end of the switch unit is grounded; when the voltage-regulator tube is reversely broken down, the switch unit is switched to the conducting state, and the transmission module is switched to the cut-off state from the conducting state. The protection circuit can effectively protect the communication chip when abnormal high voltage occurs.

The invention discloses a split gate field effect transistor with an ESD discharge path and a low-cost preparation method thereof. The split gate field effect transistor comprises a low-resistance N + substrate, two ends of the low-resistance N + substrate are respectively provided with a drain metal and an epitaxial layer, the top of the epitaxial layer is provided with a plurality of grooves, the side walls of the grooves are covered with first dielectric layers, and split gates and control gates are arranged in the grooves; the control gate and the split gate are isolated through a second dielectric layer in the range of the active region, the control gate and the split gate are short-circuited in the range of the transition region, the short-circuited part of the control gate is provided with a plurality of P-type regions, and the plurality of P-type regions are connected through N-type regions. According to the split gate field effect transistor, a plurality of PN junctions are introduced between the control gate and the split gate of the transition region of the traditional split gate field effect transistor to form a back-to-back Zener diode, and when an ESD event occurs, electrostatic charges are discharged through the Zener diode, so that the voltage between the gate and the source is not higher than the rated gate-source voltage, and the gate and the source are prevented from breaking down and damaging the device.

The embodiment of the utility model discloses an overvoltage protection circuit and a device thereof. The circuit comprises a switch unit; the input end of the switch unit is connected with input power; a control unit; the input end of the control unit is connected with a signal source, and the output end of the control unit is connected with the controlled end of the switch unit; a protection unit; the input end of the protection unit is connected with an input power supply. The output end of the protection unit is connected with the controlled end of the switch unit. The switch unit outputs a second voltage in response to a control signal input by the control unit; when the first voltage input by the input power supply is greater than a protection voltage threshold, the protection unit outputs a protection signal to the switch unit, so that the switch unit stops outputting the second voltage. According to the mode, the overvoltage protection circuit composed of the voltage stabilizing diode is arranged on the power supply part, so that the overvoltage protection of the power supply part is realized, a post-stage module is prevented from being damaged by over-high interference voltage input, and the reliability and the safety of the power supply circuit are improved.

The utility model discloses an IGBT (Insulated Gate Bipolar Transistor) protection circuit, which comprises a driving module, the input control end of the driving module is connected with the cathode of a Zener diode D0, and the cathode of the Zener diode D0 is also connected to the emitter E of an insulated gate bipolar transistor Q0. The grid electrode G of the insulated gate bipolar transistor Q0 is connected to the driving output end of the driving module through a resistor R6, and the collector electrode C of the insulated gate bipolar transistor Q0 is connected with the overcurrent detection output end of the driving module through a fast recovery diode FR107. According to the technical scheme, transient voltage spikes can be effectively restrained, the IGBT is protected against overvoltage damage, the anti-interference capacity of the circuit is enhanced, a fast recovery diode FR107 is further arranged at the overcurrent detection output end of the driving module, the switching speed can be increased, the overvoltage phenomenon during switching-off is reduced, the service life of the IGBT and the driving module is prolonged, and the service life of the IGBT and the driving module is prolonged. And the working reliability of the whole circuit is improved.

The invention belongs to the technical field of integrated circuits, and particularly relates to a high-voltage LDO (Low Dropout Regulator) circuit with an off-chip capacitor, which comprises an error amplifier EA, a buffer circuit BUFFER, a power tube made of a first P-type DEMOS, an output voltage dividing sampling resistance circuit consisting of a first resistor R1 and a second resistor R2, a floating rail circuit, an enabling circuit and a load capacitor, the floating rail circuit comprises a Zener diode and a third resistor, and a floating low power rail VFLOAT having a stable difference value with the input voltage is provided for the EA and the BUFFER through the reverse bias breakdown voltage of the Zener diode; according to the characteristics of low output impedance and low input parasitic capacitance of the BUFFER circuit, a low-frequency secondary pole composed of an EA high output resistor and a power tube large grid parasitic capacitor is split into two high-frequency poles, and the loop stability of the high-voltage LDO is guaranteed.

The utility model discloses a power supply module and an SoC chip, and belongs to the field of circuits. The power supply module provided by the utility model comprises a voltage stabilizing diode, a first RC circuit and a first power supply chip, the first power supply chip is provided with an input pin, an enabling pin and an output pin; an input pin of the first power supply chip is connected with the power supply end, an enabling pin of the first power supply chip is connected with the power supply end through the first RC circuit and the voltage stabilizing diode in sequence, and an output pin of the first power supply chip is coupled with the first voltage output end; wherein the positive electrode of the voltage stabilizing diode is connected with the first RC circuit, and the negative electrode of the voltage stabilizing diode is connected with the power supply end.

A power supply circuit of an embodiment includes a first transistor including a source connected to an input terminal, and a gate connected to a first node; a second transistor including a drain connected to a drain of the first transistor, and a source connected to an output terminal; a third transistor including a source connected to the input terminal, a drain connected to the first node, and a gate connected to a second node; and a Zener diode including an anode connected to the input terminal, and a cathode connected to the second node.

A voltage tester system / device for safety application in AC & DC electrical systems and method thereof. The system / device includes a voltage presence indicator (VPI) circuit including plurality of zener diodes, bi-directional current-limiter circuits, VPI-LEDs and an absence of voltage tester (AVT) circuit including plurality of comparator circuits, optocouplers, DC-DC converters, microcontroller, power-management circuit, battery, LEDs and diodes. The VPI circuit converts electrical energy potential between the lines in range of 3 to 3394 volts (phase to neutral) / 5.2 to 5879 volts (phase to phase) into electrical inputs that drives VPI-LEDs to produce light output. The AVT circuit helps in checking circuit wires intactness with their respective busbars and verify absence of hazardous voltage by providing positive indication with a GREEN-light when safe voltage level is attained at connected leads, and voltage is less than a preset threshold value.

The invention belongs to the field of electrostatic discharge (ESD) and electrical overstress (EOS) pulse protection of an integrated circuit, and particularly provides an electrostatic surge integrated protection circuit of a high-reliability high-voltage driving chip, which is used for solving the problems of easy latching, high trigger voltage, poor robustness, low starting speed and the like in a traditional high-voltage ESD / EOS protection scheme. The SCR structure, the Zener structure and the LDMOS structure are technically embedded, the voltage clamping capacity of the Zener diode, the high voltage endurance capacity of the LDMOS, the quick response characteristic of the composite transistor and the strong discharge capacity of the SCR are integrated, the electrostatic and surge integrated protection efficiency is achieved, and under the ESD / EOS electric stress effect, the electrostatic and surge integrated protection effect is achieved. The composite structure promotes orderly opening of the Zener structure, the SCR structure and the LDMOS structure under the action of positive feedback, so that ESD and EOS protection requirements of different pulse frequencies are met, the hysteresis effect and the trigger voltage are remarkably reduced, and the latch-up phenomenon is effectively avoided.

An inrush current reduction circuit includes a switching element connected between a power side of a BMS module and a power side of a battery cell module and having a gate connected to a ground side through a first resistor, a diode connected at one side thereof to a source of the switching element, a second resistor connected at one side thereof to the other side of the diode and connected at the other side thereof to the ground side through the first resistor, and a Zener diode connected in parallel to the second resistor.

A semiconductor device includes a body, a first electrode, and an insulation layer. The body includes: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type formed at a position where the second semiconductor region is in contact with the first electrode and the insulation layer; and a third semiconductor region of the first conductive type formed in contact with the second semiconductor region such that the third semiconductor region surrounds the second semiconductor region as viewed in a plan view. In the semiconductor device, assuming a total amount of dopants in the second semiconductor region as S1 and a total amount of dopants in the third semiconductor region as S2, a relationship of S1<S2 is satisfied, and a combination of the second semiconductor region and the third semiconductor region has a function of a Zener diode.

The invention relates to a voltage stabilizing diode chip manufacturing method, and belongs to the field of electronic accessories. According to the method for plating nickel and silver on the metal, the adhesion among all layers of the metal is improved, the metal is not prone to falling off, and the weldability and the uniformity are improved. And by adopting a silicon wafer diffusion method, only one-time photoetching is adopted, so that the cost is greatly reduced. Besides, the glass powder is adopted for glass passivation, the glass powder of the formula is easier and faster to melt after being subjected to high temperature, inconsistent thickness caused by non-uniform melting and cracks of a glass layer are avoided, the uniformity of glass passivation is improved, PN junctions are better protected while the area of the PN junctions is increased, and the reject ratio of electric leakage is avoided. And the working current is improved. According to the method disclosed by the invention, the mode of grooving the glass of which the grooves are removed by the ultraviolet laser on the front surface, grooving the back surface by the infrared laser and then splitting is adopted, so that the loss in the cutting process and the damage to a glass passivation layer are greatly reduced, and the product yield and the yield are effectively improved.

A switching converter comprises an input terminal for receiving an input voltage, an output terminal for providing an output voltage, an input switching circuit, an energy storage circuit having a capacitor, and a pre-charge circuit. The input switching circuit has a first switch and a second switch coupled in series to form a switch node. The energy storage circuit has a capacitor coupled to the switch node. The pre-charge circuit is coupled between the input terminal and the switch node, having a Zener diode and a resistor coupled in series. A cathode of the Zener diode is coupled to the input terminal. The pre-charge circuit charges the capacitor during startup of the switching converter and stops charging the capacitor based on the input voltage.

An inrush current reduction circuit (110) includes a switching element (Q1) connected between a power side of a BMS module (10) and a power side of a battery cell module (20) and having a gate (G) connected to a ground side through a first resistor (R6), a diode (D6) connected at one side thereof to a source of the switching element, a second resistor (R5) connected at one side thereof to the other side of the diode and connected at the other side thereof to the ground side through the first resistor, and a Zener diode (D4) connected in parallel to the second resistor. Fig. 3

The present application provides a kind of driving device, prevent the overcurrent detection input terminal voltage due to the current flowing in the chip peripheral ground wiring rises and thus generates the false operation of overcurrent detection circuit.In the IS terminal of overcurrent detection circuit arranged in the position far away from GND terminal and the B point of chip peripheral ground wiring (11) are provided as terminal protection circuit transistor MN1, in the CFO terminal arranged in the position further away from GND terminal and the C point of chip peripheral ground wiring (11) are provided as terminal protection circuit zener diode ZD1.In addition, the input of the acceptance threshold voltage of comparator COMP_IS and the B point of chip peripheral ground wiring (11) are provided as potential offset element transistor MN2.Between thus, when the potential of B point rises due to the overvoltage applied to CFO terminal, by making the two input terminals of comparator COMP_IS also rise, thereby preventing false operation.

The utility model relates to a low-cost protection circuit which comprises an input circuit, the output end of the input circuit is electrically connected with the power supply ends of a first control circuit, a second control circuit and an output control circuit at the same time, and the output end of the first control circuit is electrically connected with the grounding ends of the second control circuit and the output control circuit at the same time. The output end of the second control circuit is electrically connected with the control end of the output control circuit, and the input circuit, the first control circuit, the second control circuit and the output control circuit are all composed of discrete components. According to the scheme, the low-cost protection circuit is only composed of the two MOS tubes, the two voltage stabilizing diodes, the triode, the resistor, the capacitor and the switch, has the advantages of being simple in circuit and low in cost, and can achieve multiple protection functions of power supply overvoltage, undervoltage, reverse connection and surge current impact at the same time. The performance is reliable, an IC or an optocoupler or a single-chip microcomputer chip does not need to be arranged, programming codes are not needed, production is convenient, and the production efficiency is improved.

To suppress malfunction of an upper arm power semiconductor element even when disturbance noise occurs.SOLUTION: A power conversion device 11 includes: an upper arm IGBT 13 provided between a main DC power source Vdc and an output-terminal Pout; a gate short-circuit MOSFET 17 provided between a first gate terminal 13G related to the upper arm IGBT 13 and the output terminal Pout and in which a first parasitic capacitance Cgs is provided in parallel; a first zener diode DZ1 provided between a second gate terminal 17G related to the gate-short-circuit MOSFET 17 and the output-terminal Pout; a first diode D1 provided between the main DC power source Vdc and the first zener diode DZ1 and in which a second parasitic capacitance Cd1 is provided in parallel; and a second diode D2 provided close to the first diode D1 and configured to irradiate the first diode D1 with light.SELECTED DRAWING: Figure 3

The utility model discloses a dual-optocoupler protection circuit, which comprises a chip U1, an optocoupler U2 and an optocoupler U3, and is characterized in that the FB end of the chip U1 is connected with the fourth pin of the optocoupler U2 and the fourth pin of the optocoupler U3; a pin 3 of the optocoupler U2 is connected with a pin 3 of the optocoupler U3; a pin 2 of the optocoupler U2 is connected with a pin 1 of the optocoupler U3; a pin 1 of the optocoupler U2 is connected with a resistor R121 and a resistor R98, the resistor R121 is connected with a voltage stabilizing diode ZD6, and the voltage stabilizing diode ZD6 is connected with a resistor R120; and the resistor R98 is connected with the pin 2 of the optocoupler U2 and the pin 1 of the optocoupler U3. According to the utility model, the damage of the power supply caused by failure of a single device can be met, the power supply and the personal safety of a user can be better protected, and the protection circuit can be better applied to the market due to more and more safety accidents caused by failure of a charger and higher and higher requirements on the safety of the charger at present.

The invention relates to a driver circuit for one or more power semiconductors (SD), the driver circuit comprising: at least one first switch (S1) and at least one second switch (S2), the driver circuit being connectable both to the lower switching potential and to the upper switching potential, a connection to the lower switching potential or to the upper switching potential being enabled by operation of the at least one first switch (S1) and of the at least one second switch (S2); a capacitor (Ctr) and a Zener diode (D0), the capacitor (Ctr) and the Zener diode (D0) being arranged in parallel branches, the parallel branches being connected on a first side to the connection of the switches (S1, S2), and the parallel branches being connected on a second side to the gate terminal of the power semiconductor (SD) to be driven, characterised in that the branch including the capacitor (Ctr) also comprises a resistor (RGon), and wherein in addition a protection circuit (OPT) comprising a further Zener diode and an antiserially connected diode is provided between the gate terminal (G) of the power semiconductor (SD) to be driven and the source terminal (S) of the power semiconductor (SD) to be driven.

The utility model particularly relates to an active LED afterglow removing circuit, which comprises a VIN end, a grounding end GND, a light emitting diode LED1, a first field effect transistor Q1, a second field effect transistor Q2 and an ON / OFF control end, and is characterized in that the VIN end is connected to one end of a third resistor R3; the cathode of the LED 1 is connected with the pin 3 of the second field effect transistor Q2; a pin 1 of the second field effect transistor Q2 is connected to a pin 2 of the first field effect transistor Q1; a pin 3 of the first field effect transistor Q1 is connected with a grounding end GND; the first pin of the first field effect transistor Q1 is connected with an ON / OFF control end, a first capacitor C1 and a voltage stabilizing diode Z1 are connected between the first pin and the third pin of the second field effect transistor Q2 in parallel, the afterglow phenomenon is thoroughly eliminated through an active discharge mechanism, and the problems that a traditional passive scheme is delayed in response and high in cost are solved. The circuit is simple in structure and high in compatibility, and has the advantages of low cost and high reliability.

The invention relates to an illumination device for illuminating a space exposed to ionising radiation, the device comprising: a power supply circuit having an input for receiving alternating current from a mains electricity grid and an output suitable for delivering a direct current in response to receiving the alternating current, the power supply circuit comprising a diode bridge, and an illumination circuit (50) connected to the output of the power supply circuit, the illumination circuit comprising: a plurality of light-emitting diodes (51) connected in series, a plurality of Zener diodes (52), each connected in parallel with one or more light-emitting diodes of the plurality of light-emitting diodes and at least one resistor (53) connected in series with the plurality of light-emitting diodes, wherein a cumulative nominal supply voltage of the plurality of light-emitting diodes connected in series is adapted to a nominal voltage of the mains electricity grid.

The application discloses a current monitoring circuit and a monitoring method. The current monitoring circuit comprises a Zener diode, an operational amplifier, a first MOSFET, a second MOSFET and a current mirror circuit. The current monitoring circuit and the monitoring method do not need to use a single-chip integrated or customized power tube, and accurately provide a current proportional to a current flowing through a required monitoring power switch for system monitoring.

Overvoltage protection circuit (2) for an electronic device, comprising two connection terminals (21, 22) for connection to the electronic device to be protected, and comprising between said connection terminals: - a first branch comprising a controlled switch (25) having a control terminal (250), - a second branch comprising at least one Zener diode (26, 27), the second branch being connected to the control terminal (250) of the controlled switch (25), - a third branch comprising two input terminals (23, 24) for connection to a test circuit (3), the third branch also being connected to the control terminal (250) of the controlled switch (25), the test circuit being capable of closing the controlled switch via the control terminal. Figure for the abbreviation: Figure 2

This invention provides a high-voltage suppression and voltage regulation protection circuit, relating to the field of circuit protection technology. The circuit includes a high-voltage discharge elimination circuit, a π-type composite EMI filter network circuit, and a voltage regulator circuit connected in sequence, with terminals at both the input and output ends. The high-voltage discharge elimination circuit consists of four DC spark discharge tubes and two varistors. The π-type composite EMI filter network circuit includes two high-voltage ceramic capacitors, two inductors, and one common-mode inductor. The voltage regulator circuit consists of an electrolytic capacitor and a Zener diode. Through the synergistic effect of the front-stage high-voltage elimination, intermediate-stage filtering, and rear-stage voltage regulation, the circuit achieves suppression and voltage regulation protection against high-voltage interference ranging from kilovolts to tens of kilovolts, ensuring continuous normal operation of the circuit system under harsh high-voltage environments.

The invention relates to the technical field of light-emitting semiconductors, and particularly discloses a vertical LED light-emitting device and a manufacturing method thereof.The vertical LED light-emitting device comprises a metal substrate, a light-emitting diode, a Zener diode, a first bonding wire, a second bonding wire and a packaging adhesive layer; the light-emitting diode is fixed above the metal substrate, the Zener diode is fixed on one side of the upper surface of the light-emitting diode, one end of the first bonding wire is connected with an electrode at one end of the metal substrate, the other end of the first bonding wire is connected with the light-emitting diode, and the other end of the first bonding wire is connected with the metal substrate. One end of the second bonding wire is connected with an electrode at the other end of the metal substrate, and the other end of the second bonding wire is connected with the Zener diode; and the packaging adhesive layer covers the metal substrate, the light emitting diode, the Zener diode, the first bonding wire and the second bonding wire. Through the design that the Zener diode and the light emitting diode are connected in parallel, an additional electrostatic protection mechanism is provided for the LED.