249 results about "Zener diode" patented technology

The utility model discloses an intrinsic safety power supply circuit and a fuel electrochemical oxygen analyzer. The intrinsic safety power supply circuit comprises a first MOS tube, a first capacitor, a second capacitor, a first resistor, a first Schottky diode, a first Zener diode and a second Zener diode, the power supply module of the fuel electrochemical oxygen analyzer comprises the intrinsic safety power supply circuit and further comprises a sensor module, an AD conversion module, a key module, a single chip microcomputer module, an analog output module and a display driving module which are connected with the power supply module, and the single chip microcomputer module is connected with the AD conversion module, the key module, the analog output module and the display driving module. The sensor module is connected with the AD conversion module, and the analog output module is connected with external equipment; the fuel electrochemical oxygen analyzer adopts the intrinsically safe power supply circuit to limit the working current and voltage in the circuit so as to control the power consumption of the whole machine, so that explosion prevention is realized, and the fuel electrochemical oxygen analyzer can measure the oxygen concentration in a flammable and explosive environment.

The invention discloses a split gate field effect transistor with an ESD discharge path and a low-cost preparation method thereof. The split gate field effect transistor comprises a low-resistance N + substrate, two ends of the low-resistance N + substrate are respectively provided with a drain metal and an epitaxial layer, the top of the epitaxial layer is provided with a plurality of grooves, the side walls of the grooves are covered with first dielectric layers, and split gates and control gates are arranged in the grooves; the control gate and the split gate are isolated through a second dielectric layer in the range of the active region, the control gate and the split gate are short-circuited in the range of the transition region, the short-circuited part of the control gate is provided with a plurality of P-type regions, and the plurality of P-type regions are connected through N-type regions. According to the split gate field effect transistor, a plurality of PN junctions are introduced between the control gate and the split gate of the transition region of the traditional split gate field effect transistor to form a back-to-back Zener diode, and when an ESD event occurs, electrostatic charges are discharged through the Zener diode, so that the voltage between the gate and the source is not higher than the rated gate-source voltage, and the gate and the source are prevented from breaking down and damaging the device.

The utility model discloses a power supply module and an SoC chip, and belongs to the field of circuits. The power supply module provided by the utility model comprises a voltage stabilizing diode, a first RC circuit and a first power supply chip, the first power supply chip is provided with an input pin, an enabling pin and an output pin; an input pin of the first power supply chip is connected with the power supply end, an enabling pin of the first power supply chip is connected with the power supply end through the first RC circuit and the voltage stabilizing diode in sequence, and an output pin of the first power supply chip is coupled with the first voltage output end; wherein the positive electrode of the voltage stabilizing diode is connected with the first RC circuit, and the negative electrode of the voltage stabilizing diode is connected with the power supply end.

A power supply circuit of an embodiment includes a first transistor including a source connected to an input terminal, and a gate connected to a first node; a second transistor including a drain connected to a drain of the first transistor, and a source connected to an output terminal; a third transistor including a source connected to the input terminal, a drain connected to the first node, and a gate connected to a second node; and a Zener diode including an anode connected to the input terminal, and a cathode connected to the second node.

A voltage tester system / device for safety application in AC & DC electrical systems and method thereof. The system / device includes a voltage presence indicator (VPI) circuit including plurality of zener diodes, bi-directional current-limiter circuits, VPI-LEDs and an absence of voltage tester (AVT) circuit including plurality of comparator circuits, optocouplers, DC-DC converters, microcontroller, power-management circuit, battery, LEDs and diodes. The VPI circuit converts electrical energy potential between the lines in range of 3 to 3394 volts (phase to neutral) / 5.2 to 5879 volts (phase to phase) into electrical inputs that drives VPI-LEDs to produce light output. The AVT circuit helps in checking circuit wires intactness with their respective busbars and verify absence of hazardous voltage by providing positive indication with a GREEN-light when safe voltage level is attained at connected leads, and voltage is less than a preset threshold value.

A semiconductor device includes a body, a first electrode, and an insulation layer. The body includes: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type formed at a position where the second semiconductor region is in contact with the first electrode and the insulation layer; and a third semiconductor region of the first conductive type formed in contact with the second semiconductor region such that the third semiconductor region surrounds the second semiconductor region as viewed in a plan view. In the semiconductor device, assuming a total amount of dopants in the second semiconductor region as S1 and a total amount of dopants in the third semiconductor region as S2, a relationship of S1<S2 is satisfied, and a combination of the second semiconductor region and the third semiconductor region has a function of a Zener diode.

A switching converter comprises an input terminal for receiving an input voltage, an output terminal for providing an output voltage, an input switching circuit, an energy storage circuit having a capacitor, and a pre-charge circuit. The input switching circuit has a first switch and a second switch coupled in series to form a switch node. The energy storage circuit has a capacitor coupled to the switch node. The pre-charge circuit is coupled between the input terminal and the switch node, having a Zener diode and a resistor coupled in series. A cathode of the Zener diode is coupled to the input terminal. The pre-charge circuit charges the capacitor during startup of the switching converter and stops charging the capacitor based on the input voltage.

The present application provides a kind of driving device, prevent the overcurrent detection input terminal voltage due to the current flowing in the chip peripheral ground wiring rises and thus generates the false operation of overcurrent detection circuit.In the IS terminal of overcurrent detection circuit arranged in the position far away from GND terminal and the B point of chip peripheral ground wiring (11) are provided as terminal protection circuit transistor MN1, in the CFO terminal arranged in the position further away from GND terminal and the C point of chip peripheral ground wiring (11) are provided as terminal protection circuit zener diode ZD1.In addition, the input of the acceptance threshold voltage of comparator COMP_IS and the B point of chip peripheral ground wiring (11) are provided as potential offset element transistor MN2.Between thus, when the potential of B point rises due to the overvoltage applied to CFO terminal, by making the two input terminals of comparator COMP_IS also rise, thereby preventing false operation.

The utility model relates to a low-cost protection circuit which comprises an input circuit, the output end of the input circuit is electrically connected with the power supply ends of a first control circuit, a second control circuit and an output control circuit at the same time, and the output end of the first control circuit is electrically connected with the grounding ends of the second control circuit and the output control circuit at the same time. The output end of the second control circuit is electrically connected with the control end of the output control circuit, and the input circuit, the first control circuit, the second control circuit and the output control circuit are all composed of discrete components. According to the scheme, the low-cost protection circuit is only composed of the two MOS tubes, the two voltage stabilizing diodes, the triode, the resistor, the capacitor and the switch, has the advantages of being simple in circuit and low in cost, and can achieve multiple protection functions of power supply overvoltage, undervoltage, reverse connection and surge current impact at the same time. The performance is reliable, an IC or an optocoupler or a single-chip microcomputer chip does not need to be arranged, programming codes are not needed, production is convenient, and the production efficiency is improved.

The utility model discloses a dual-optocoupler protection circuit, which comprises a chip U1, an optocoupler U2 and an optocoupler U3, and is characterized in that the FB end of the chip U1 is connected with the fourth pin of the optocoupler U2 and the fourth pin of the optocoupler U3; a pin 3 of the optocoupler U2 is connected with a pin 3 of the optocoupler U3; a pin 2 of the optocoupler U2 is connected with a pin 1 of the optocoupler U3; a pin 1 of the optocoupler U2 is connected with a resistor R121 and a resistor R98, the resistor R121 is connected with a voltage stabilizing diode ZD6, and the voltage stabilizing diode ZD6 is connected with a resistor R120; and the resistor R98 is connected with the pin 2 of the optocoupler U2 and the pin 1 of the optocoupler U3. According to the utility model, the damage of the power supply caused by failure of a single device can be met, the power supply and the personal safety of a user can be better protected, and the protection circuit can be better applied to the market due to more and more safety accidents caused by failure of a charger and higher and higher requirements on the safety of the charger at present.

The utility model particularly relates to an active LED afterglow removing circuit, which comprises a VIN end, a grounding end GND, a light emitting diode LED1, a first field effect transistor Q1, a second field effect transistor Q2 and an ON / OFF control end, and is characterized in that the VIN end is connected to one end of a third resistor R3; the cathode of the LED 1 is connected with the pin 3 of the second field effect transistor Q2; a pin 1 of the second field effect transistor Q2 is connected to a pin 2 of the first field effect transistor Q1; a pin 3 of the first field effect transistor Q1 is connected with a grounding end GND; the first pin of the first field effect transistor Q1 is connected with an ON / OFF control end, a first capacitor C1 and a voltage stabilizing diode Z1 are connected between the first pin and the third pin of the second field effect transistor Q2 in parallel, the afterglow phenomenon is thoroughly eliminated through an active discharge mechanism, and the problems that a traditional passive scheme is delayed in response and high in cost are solved. The circuit is simple in structure and high in compatibility, and has the advantages of low cost and high reliability.

The application discloses a current monitoring circuit and a monitoring method. The current monitoring circuit comprises a Zener diode, an operational amplifier, a first MOSFET, a second MOSFET and a current mirror circuit. The current monitoring circuit and the monitoring method do not need to use a single-chip integrated or customized power tube, and accurately provide a current proportional to a current flowing through a required monitoring power switch for system monitoring.

This invention provides a high-voltage suppression and voltage regulation protection circuit, relating to the field of circuit protection technology. The circuit includes a high-voltage discharge elimination circuit, a π-type composite EMI filter network circuit, and a voltage regulator circuit connected in sequence, with terminals at both the input and output ends. The high-voltage discharge elimination circuit consists of four DC spark discharge tubes and two varistors. The π-type composite EMI filter network circuit includes two high-voltage ceramic capacitors, two inductors, and one common-mode inductor. The voltage regulator circuit consists of an electrolytic capacitor and a Zener diode. Through the synergistic effect of the front-stage high-voltage elimination, intermediate-stage filtering, and rear-stage voltage regulation, the circuit achieves suppression and voltage regulation protection against high-voltage interference ranging from kilovolts to tens of kilovolts, ensuring continuous normal operation of the circuit system under harsh high-voltage environments.

This invention discloses a primary-side feedback output no-load voltage stabilization circuit, including a transformer T1. One end of the N1 coil of the transformer T1 is connected to the voltage feedback pin of the main control unit U1, and the other end is grounded. One end of the N2 coil of the transformer T1 is connected to the collector of the transistor Q2 through a diode D2, and the VCC voltage output from the emitter is supplied to the VDD terminal of the main control unit U2. The cathode of the diode D2 is grounded through a capacitor EC1, and the cathode is also connected to the voltage terminal through resistors R9 and R10 respectively. The cathode of the diode D2 is also connected to the base of the transistor Q2 through a resistor R11, and the base is also grounded through a Zener diode ZD1.

A Zener diode includes a P + anode, a polysilicon mesh ring on a surface of a semiconductor substrate and surrounding the P + anode, an N + cathode opposite the P + anode with respect to the polysilicon mesh ring, an outer spacer on an outer portion of the polysilicon mesh ring adjacent the N + cathode, and an inner spacer located on an inner portion of the polysilicon mesh ring adjacent to the P + anode. The polysilicon mesh ring may be a polysilicon layer on a TEOS layer. The Zener diode may be located in a lightly doped N-well, wherein a Zener junction includes an N-well high region adjacent to and below the P + anode. The Zener diode may be located in a highly doped N-well, where the Zener junction includes a P-structure formed in the highly doped N-well in an upper portion of the semiconductor substrate and adjacent to and surrounding the P + anode.

This application relates to the field of analog integrated circuit technology and discloses a voltage reference circuit suitable for high power supply voltages. The circuit replaces the Zener diode pre-regulation architecture with a voltage-limiting loop biased by a positive temperature coefficient current source. A stable low power supply voltage is generated by forming a negative feedback loop through a high-voltage regulating transistor and a feedback sampling transistor. A reference voltage is generated by subtracting the gate-source voltages of two sets of transistors with different threshold voltages. Furthermore, it incorporates a frequency-band coordinated power supply rejection ratio enhancement module, a pre-charging and automatic loop exit startup acceleration module, and a dual-branch complementary control trimming module. This circuit achieves a comprehensive performance of small area, low power consumption, high power supply rejection ratio, and fast startup.

This utility model discloses a high-voltage protection control circuit, including a first connector CN1 and a second connector CN2. Between the first connector CN1 and the second connector CN2, there are also: a second Zener diode D2, a first Zener diode D1, a second transistor Q2, a first transistor Q1, a switching transistor Q3, a voltage divider resistor R8, and a step-down chip U1. This utility model utilizes the second Zener diode D2 and the first Zener diode D1 to implement the avalanche effect, directly driving the second transistor Q2 and the first transistor Q1, and delaying overvoltage response, resulting in a significant improvement in response speed. Furthermore, the combination of the second Zener diode D2, the first Zener diode D1, the second transistor Q2, the first transistor Q1, and the switching transistor Q3 implements a complete protection function, reducing the overall circuit area and achieving high circuit integration. Moreover, it eliminates the need for a dedicated IC chip for control, reducing production costs.

The utility model discloses a high-efficiency linear direct-current power supply with a transformer secondary tap capable of zero-crossing automatic switching, which is characterized in that a 220V power supply is subjected to voltage reduction through a transformer T, terminals 4, 3, 2 and 1 of the transformer respectively output different alternating-current voltages, the terminals 4 and 1 are connected with the input end of a bridge rectifier B, the terminals 3 and 2 are respectively connected with a working ground through backward diodes D6 and D5, and the working ground is connected with the working ground through the reverse diodes D6 and D5. A transistor T1, resistors R1, R2, R3 and R4, a potentiometer P1 and a voltage stabilizing diode D7 form a grid trigger circuit of a one-way silicon controlled rectifier Th1, when small and medium loads are loaded, reverse breakdown of the D7 is just achieved by adjusting the voltage of the P1 and the sliding end, T1 is conducted, the silicon controlled rectifier Th1 is cut off, and a terminal 4-2 or a terminal 1-3 of a transformer T supplies power to the loads; when the load is heavy, the Uo drops, the result is that the sliding end voltage of the P1 cannot enable the D7 to be reversely broken down, the D7 is cut off, the T1 is cut off, the Th1 is conducted, and the transformer terminal 4-1 or 1-4 provides a power supply for the load.

The utility model relates to the technical field of light-emitting semiconductors, and particularly discloses a vertical LED light-emitting device, which comprises a metal substrate, a light-emitting diode, a Zener diode, a first bonding wire, a second bonding wire and a packaging adhesive layer, the light-emitting diode is fixed above the metal substrate, the Zener diode is fixed on one side of the upper surface of the light-emitting diode, one end of the first bonding wire is connected with an electrode at one end of the metal substrate, the other end of the first bonding wire is connected with the light-emitting diode, and the other end of the first bonding wire is connected with the metal substrate. One end of the second bonding wire is connected with an electrode at the other end of the metal substrate, and the other end of the second bonding wire is connected with the Zener diode; and the packaging adhesive layer covers the metal substrate, the light emitting diode, the Zener diode, the first bonding wire and the second bonding wire. According to the utility model, through the design that the Zener diode is connected with the light emitting diode in parallel, an extra electrostatic protection mechanism is provided for the LED.

This application provides a multiplier circuit with small area and low temperature drift. The multiplier circuit includes a first voltage module for receiving a first input current I1 and a second input current I2, and generating a first control voltage related to the first input current I1 and the second input current I2; a current module including a first resistor R1 and a first Zener diode D1 for generating a reference current IM1 in the circuit, the reference current IM1 being related to the first Zener diode D1 and the first resistor R1; a second voltage module connected to the first voltage module and the current module for generating a second control voltage related to the reference current IM1 and the output current IM2 driven by it, the second control voltage and the first control voltage satisfying a specific formula; and an output module including a second resistor R2 for converting the output current IM2 into an output voltage V. O And make the output voltage V O It satisfies a specific formula.

The utility model discloses a charging circuit capable of automatically switching between an intelligent POS machine base and USB charging. The circuit structurally comprises a charging chip U15, a charging chip U16, an MOS parasitic diode Q4, an MOS parasitic diode Q5, a triode Q6A, a triode Q6B, a triode Q7A, a triode Q7B, a bidirectional voltage stabilizing diode D14, a bidirectional voltage stabilizing diode D15, a capacitor C83, a capacitor C84, a capacitor C85, a resistor R84, a resistor R85, a resistor R86, a resistor R87, a resistor R88, a resistor R89, a resistor R90, a resistor R91, a resistor R92, a resistor R93, a resistor R94, a resistor R95, a resistor R161, a resistor R162, a resistor R163 and a resistor R166. Source electrodes of the Q4 and the Q5 are connected together to form a selection node, grid electrodes of the Q4 and the Q5 are controlled by the Q6A and the Q6B respectively, and either USB power supply or base power supply is achieved. The nEN end of the U15 is connected with DOCKVCC through the R92, when the base is inserted, the U15 is automatically closed, the base is preferentially used for power supply, and circulation is prevented; according to the circuit, the MOS parasitic diode characteristic is utilized, a conduction path is automatically switched when only a USB, only a base or double power supplies coexist, and stable charging of the POS machine is ensured.

Embodiments of this application relate to a Zener diode, a method for preparing a Zener diode, and a semiconductor integrated structure. A first conductivity-type body region is set to include a plurality of sub-body regions, and the sub-body regions are spaced away from each other in a first conductivity-type well region; in a direction perpendicular to a plane where a semiconductor material layer is located, a projection of a second conductivity-type doped region covers and exceeds projections of outer contours of the plurality of sub-body regions; and at a position where the projection of the second conductivity-type doped region exceeds the projections of the outer contours of the plurality of sub-body regions and a position spaced between the sub-body regions, the second conductivity-type doped region is connected to the first conductivity-type well region. In this way, an operating current of the Zener diode can be increased without increasing a reverse leakage current of the Zener diode, thereby optimizing performance of the Zener diode.

The invention relates to a device for protecting an electrical circuit coupled to a power supply network, in particular a vehicle power supply network, from overvoltage, comprising: an electrical input for applying an input voltage; an electrical output for providing an output voltage to a power supply network or a connected circuit; and an electrical protection circuit having a detection section, a semiconductor switch and a limiting section, the semiconductor switch being arranged between the electrical input and the electrical output and being actuatable in such a way that the output voltage output at the electrical output can be interrupted, wherein the detection section is configured to actuate the semiconductor switch by means of an actuation voltage when a threshold value of the input voltage is reached in such a way that the output of the output voltage is interrupted, the detection section having a voltage threshold detection element, such as a Zener diode, and wherein the limit section is configured to limit the output voltage when the output voltage is interrupted. The control voltage for the semiconductor switch is limited.

A lighting device (101) for a motor vehicle comprising: a control unit (107) to which a light module (106) is connected; a series connection of bridgeable semiconductor light sources (44-48), wherein the lighting device (101) has a headlight housing (102) in which two light modules (105, 106) are arranged and supplied with electrical energy by the control unit (107) which is remotely connected via connecting lines (110); wherein the control unit (107) is arranged on the outside of the headlight housing (102) in a control unit housing (108); characterized in that the protection circuit (2) is designed to protect the series connection of the bridgeable semiconductor light sources (44-48); that the protection circuit (2) comprises a series connection of a current measuring element (8) and an actuator (10); and that a Zener diode (18) is connected between an actuator terminal (22) of the actuator (10) and an input. (9) of the actuator (10) is arranged,that the control unit (107):- has an input with two input terminals (26, 28) which can be connected to the vehicle's electrical system via a plug / socket element (109),- includes a buck converter comprising a switch (34), a diode (36) and a coil (38), and- has an output capacitor (40) and an input capacitor (42).

An anti-fuse memory cell, an anti-fuse memory array and a memory, the anti-fuse memory cell comprising: an anti-fuse structure having a first end and a second end; the selection transistor comprises a drain electrode and a source electrode, and one of the drain electrode and the source electrode is coupled with the first end of the anti-fuse structure; and the anode of the voltage stabilizing diode is coupled with the other one of the drain electrode and the source electrode. According to the embodiment of the invention, the voltage stabilizing diode is additionally arranged in the anti-fuse memory cell and is connected with the selection transistor in series, the voltage stabilizing diode can provide stable voltage for the selection transistor, interference caused by current fluctuation can be resisted, correspondingly, the selection transistor can provide stable current for the anti-fuse structure, and the anti-fuse memory cell is more stable in performance. Therefore, the programming reliability of the anti-fuse structure is improved.

A circuit arrangement for discharging an electrical component includes a photovoltaic isolation unit, which is arranged on a first side between a first input terminal and a second input terminal and is arranged on a second side between a first intermediate node and a second intermediate node. The circuit arrangement includes a first Zener diode arranged between the first intermediate node and the second intermediate node; a first resistor unit arranged between the first intermediate node and a first connection point; an intermediate circuit arranged between the first connection point, a second connection point, a third connection point and a fourth connection point; a first switching element arranged between the third connection point, a third intermediate node and a first output terminal; and a first resistor arranged between a first voltage terminal and the third intermediate node.

This utility model relates to a battery power meter circuit for a smart door lock based on a single-cell power meter chip, including a power meter circuit, a Zener diode, and a low-voltage reminder circuit. The power meter circuit includes a single-cell power meter chip U6 and a first resistor and a second resistor connected in series. The sampling pin of the single-cell power meter chip U6 is connected to the series node of the first and second resistors. The non-series node of the first resistor and the low-voltage reminder circuit are both connected to the positive terminal of the dual-cell battery. The non-series node of the second resistor is grounded. The sampling pin of the single-cell power meter chip U6 is connected to the negative terminal of the Zener diode, and the positive terminal of the Zener diode is grounded. This design reduces product costs while meeting the requirement of accurate power calculation, preventing damage to the single-cell power meter chip U6 from overvoltage or high-voltage pulses, extending the service life of the single-cell power meter chip U6, and prompting the user to charge the dual-cell battery of the smart door lock when the battery is low on voltage.

A Zener diode comprising: a PN junction formed in a semiconductor material; and one or more stress-inducing regions configured to impart a compressive stress in the PN junction along a current flow direction of the PN junction.

According to the invention, an integrated circuit arrangement is formed by reducing the injection of charge carriers into a semiconductor substrate. The circuit arrangement comprises a first and second half-bridge connected as a full bridge, wherein the drain terminals of the first transistors and the source terminals of the second transistors are electrically connected. The two parallel-connected source terminals of the second transistors are connected to the first terminal of a two-terminal resistor, while the second terminal of the resistor provides a connection for a negative supply voltage or ground potential. A Zener diode is connected between the source terminal (supply voltage) and the gate terminal of at least one of the first MOS transistors. The transistors are surrounded by at least one guard ring.The guard ring is implemented as a contacted N or P well on the P or N substrate. Around the guard ring, further P or N wells, insulated by means of deep trench structures, are arranged.

A limiting circuit, particularly for a power supply, includes a first reverse-polarized Zener diode connected and configured to limit a voltage between two output terminals depending on a first breakdown voltage, a second reverse-polarized Zener connected and configured to limit a voltage between two output terminals depending on a second breakdown voltage, a semiconductor switch coupled in series with the second Zener diode to open or close depending on a switching signal, a first shunt resistor coupled in a load path and with the first and second Zener diodes to carry the load current and the currents flowing through the first and second Zener diodes, and a comparating device configured to generate the switching signal depending on a voltage drop over the first shunt resistor.