563 results about "Pulse voltage" patented technology

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

The invention discloses an insulation resistance and capacitance measuring circuit and method based on monopulse double-edge analysis, and relates to the related field of the electrical insulation online monitoring technology, and the circuit comprises a detected object and an insulation detection circuit. The insulation detection circuit comprises a controlled pulse voltage source, a coupling resistance network, a current sensor, a switch control module, a signal modulation circuit and a processor. The measurement method implemented based on the circuit comprises the following steps: injecting a common-mode voltage pulse into a transmission line of the power transmission system by adopting a pulse transmitter; pulse current response is collected in real time, a current oscillogram is drawn, and a three-point sampling method is introduced to record a current value for insulation impedance parameter calculation; according to a load condition, a double-edge verification method is applied based on a pulse current attenuation characteristic, and insulation impedance parameters including a resistive component and a capacitive component are independently calculated by analyzing a pulse current rising edge and a pulse current falling edge. According to the invention, non-intrusive synchronous monitoring of resistive and capacitive components of line-to-ground impedance is realized, and the detection precision is improved.

The invention relates to the technical field of power electronics, and discloses a dielectric barrier discharge high-voltage series resonance system and a control method thereof. The system comprises a high-voltage series resonance circuit, an upper computer and a hardware circuit. The upper computer is electrically connected with the hardware circuit, and the hardware circuit is electrically connected with the high-voltage series resonance circuit; wherein the high-voltage series resonance circuit comprises a PFC circuit, a Buck circuit, an LC series resonance circuit, a high-voltage pulse transformer and a dielectric barrier discharge load which are connected in sequence, the high-voltage series resonance circuit converts alternating current into high-frequency high-voltage pulse voltage and provides the high-frequency high-voltage pulse voltage for the dielectric barrier discharge load, and stable dielectric barrier discharge is generated; the upper computer is used for setting parameters, the hardware circuit controls the on-off state of the Buck circuit and the LC series resonance circuit according to the parameters set by the upper computer, accurate generation and control of high-voltage pulse voltage in the dielectric barrier discharge process are achieved, and the response speed and the control precision of the system are also improved.

The invention discloses an energy consumption management system and method for a data center, and relates to the technical field of data center thermal management, and the method comprises the steps: carrying out the noise reduction of a structured data set through quantum harmonic oscillator coupling wavelet transform, and generating a real-time three-dimensional thermal distribution diagram through a Kriging spatial interpolation algorithm, solving a Navier-Stokes equation by combining the magneto-rheological grid wind resistance value, and extracting a heat flow vector; injecting pulse voltage into the microcapsule phase-change material layer according to the dual-channel execution instruction set to trigger phase-change heat absorption, reducing the viscosity of a target path by using a space gradient magnetic field, and generating a three-dimensional wind speed vector field; the real-time three-dimensional thermal distribution diagram is generated through the Kriging space interpolation algorithm, high-precision monitoring and analysis of the complex thermal environment of the data center are achieved, the accuracy of local hot spot recognition is improved, and therefore the energy utilization efficiency and the cooling effect are remarkably improved, and the purposes of reducing energy consumption and improving the operation stability and energy efficiency of the data center are achieved.

The invention belongs to the technical field of power electronics and semiconductor devices, and provides a transistor on-resistance high-precision comparison method, which comprises the following steps of: generating and outputting a direct-current voltage # imgabs0 # which can quickly adjust a numerical value and has load capacity through a direct-current voltage adjusting module; the grid driving module generates and outputs a pulse signal # imgabs3 # of which the voltage can be quickly adjusted based on the direct-current voltage # imgabs1 # and the pulse voltage # imgabs2 #; applying a pulse signal # imgabs4 # to the transistor to be measured through the power module, and measuring the on-resistance of the transistor to be measured under the gate driving voltage; and switching the gate driving voltage in the microsecond-to-nanosecond magnitude delay, and measuring the on-resistance of the transistor to be measured under the switching gate driving voltage based on the pulse signal # imgabs5 #. According to the method, the on-resistance of the transistor to be tested under different gate driving voltages can be tested in the pulse circuit, the measurement delay is shortened to several nanoseconds from several minutes of a traditional double-pulse circuit, and the performance of the transistor reliability evaluation circuit is effectively improved.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

The invention discloses a real-time dynamic monitoring method for a new energy carbon-based material purification process, and relates to the field of material processing monitoring, and the real-time dynamic monitoring method comprises the following steps: collecting pulse voltage signals, stripping current density and electrolyte conductivity data in a graphene powder purification process, and monitoring the change of functional groups on the surface of graphene on line through an infrared spectrometer; obtaining characteristic absorption peak intensity data; according to the method, multi-source data in the purification process is subjected to collaborative analysis and intelligent regulation and control, an electrochemical parameter and material structure evolution correlation model is established, the process stability is improved through parameter self-adaptive adjustment, a closed loop integrating data acquisition, feature analysis and dynamic control is constructed, and the purification efficiency and purity of the graphene powder are effectively improved.

Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (PV) waveform.

The invention discloses a cutting and polishing combined machining treatment method suitable for polycrystalline silicon. The method comprises the following steps: step 1, silicon ingot pretreatment: loading historical process data of a silicon ingot in combination with a block chain technology, generating a machining parameter packet, and issuing the machining parameter packet to cutting and polishing equipment to form a machining quantization instruction set; a plasma channel is formed through combination of femtosecond laser focusing and high-frequency electromagnetic field constraint for cutting, annular laser is synchronously used for deep micro-area fusion polishing, and the surface roughness of the cut silicon wafer is reduced by means of argon protection and the surface tension self-leveling effect; 3, polishing: immersing the anode of the silicon wafer into TEMPO / [EMIM] [BF] electrolyte, and regulating and controlling by using pulse voltage; 4, cleaning and drying, wherein megasonic assisted nanobubble ultrapure water is adopted for flushing, and Malangori drying is carried out; and 5, quality control: verifying the surface appearance and the subsurface defect density, and carrying out secondary processing flow on the abnormal silicon wafer.

The invention discloses a high-temperature pipeline magnetostrictive guided wave sensor and a monitoring method, and relates to the field of ultrasonic nondestructive testing. According to the sensor, a wrinkled iron-cobalt alloy belt is used as a sensitive element, and the sensor is in dry coupling contact with a to-be-detected pipeline; the high-temperature-resistant static magnetic field coil is wound on the outer side of the aluminum pre-tightening ring in a solenoid mode, and a bias pulse excitation mode is adopted. Alternately winding the bottom end of the wrinkle structure of the wrinkle-type ferrocobalt alloy belt and the back surface of the belt material, controlling the wrinkle-type ferrocobalt alloy belt to excite a guided wave signal in a pulse section, and receiving the guided wave signal in a bias section; the dynamic magnetic field and the static magnetic field generated by the two groups of coils are perpendicular in direction, and torsional mode guided waves are generated in the high-temperature pipeline based on the reverse Weidmann effect. The sensor is easy to install and stable in performance, the whole structure is resistant to high temperature for a long time, and the engineering problem of high-temperature failure is solved. The method provided by the invention comprises the steps of optimizing pre-tightening force, pulse voltage and bias current parameters, so that the transduction efficiency is improved, and the capability of detecting new defects of the pipeline in high-temperature and variable-temperature states is enhanced.

The invention relates to a method for efficiently and deeply removing impurities in a quartz sand inclusion, and belongs to the technical field of efficient preparation of high-purity quartz and fine and deep processing of non-metallic ores. The method comprises the following steps: mixing a quartz sand raw material with insulating liquid to form slurry; the slurry is subjected to N-stage high-voltage electric pulse treatment, and intermediate quartz sand is obtained; n is greater than or equal to 2 and is an integer, and the pulse voltage of the (N-1) th-stage high-voltage electric pulse processing is greater than the pulse voltage of the Nth-stage high-voltage electric pulse processing; the highest pulse voltage of the first-stage high-voltage electric pulse processing is not higher than 500kV, and the lowest pulse voltage of the Nth-stage high-voltage electric pulse processing is not lower than 50kV; and carrying out solid-liquid separation on the intermediate quartz sand, and carrying out acid leaching treatment on solids to obtain the high-purity quartz sand. According to the method disclosed by the invention, selective crushing of high-voltage electric pulses of more than two levels is creatively combined with a mild chemical acid leaching technology to construct an efficient synergistic process system, so that targeted deep removal of inclusion impurities in the quartz sand is realized.

The invention relates to a starting and power generation integrated control method based on externally distributed bosses of a permanent magnet motor, and the method comprises the following steps: determining the initial position of a rotor of the permanent magnet motor relative to a stator through a pulse voltage injection method, and applying a drive signal to a stator coil, so that the motor reaches the rotating speed at which an ignition trigger can stably detect the signal; an ignition trigger is used for obtaining boss signals and conducting shaping processing, and the specific position of the rotor relative to the stator is determined; the stator coil is electrified by utilizing the relative position of the rotor and the stator, the motor is driven to rotate, and flux-weakening voltage regulation control is carried out; and when the power-assisted condition is met, a stator coil corresponding to the permanent magnet motor is electrified by utilizing the relative position of the rotor and the stator, so that switching control from power generation voltage regulation to power-assisted driving of the motor is realized, and power-assisted driving operation is executed. According to the control method, the boss on the rotor is used for starting and power generation voltage regulation control of the permanent magnet motor, and the method is simple and easy to implement.

Catheter systems and methods for the selective and rapid application of DC voltage to drive irreversible electroporation are disclosed herein. In some embodiments, an apparatus includes a voltage pulse generator and an electrode controller. The voltage pulse generator is configured to produce a pulsed voltage waveform. The electrode controller is configured to be operably coupled to the voltage pulse generator and a medical device including a series of electrodes. The electrode controller includes a selection module and a pulse delivery module. The selection module is configured to select a subset of electrodes from the series of electrodes. The selection module is configured identify at least one electrode as an anode and at least one electrode as a cathode. The pulse delivery module is configured to deliver an output signal associated with the pulsed voltage waveform to the subset of electrodes.

The invention discloses a method for preparing fine-grain copper and copper alloy through pulsed magnetic field and rare earth adding composite regulation and control, and belongs to the technical field of copper and copper alloy material preparation. Graphite mold casting is adopted in the method, and the method comprises the specific steps that electrolytic copper with the purity larger than or equal to 99.95 wt% or a copper alloy with specific components is prepared as a matrix raw material; after smelting, adding pure lanthanum blocks and uniformly stirring; after the melt is poured into a preheating mold, a pulsed magnetic field is applied immediately for treatment, and the parameters of the magnetic field are as follows: the pulse voltage is 180-250 V, the frequency is 4.5-6.5 Hz, and the duration time is 15-20 minutes. According to the method, the heterogeneous nucleation effect of rare earth lanthanum is combined with the melt forced convection and dendritic crystal crushing effect caused by the pulsed magnetic field to synergistically refine a solidification structure and promote columnar crystal orientation equiaxed crystal transformation, so that a cast ingot with fine crystal grains is directly obtained in the casting stage, and the possibility is provided for simplifying the subsequent processing technology.

The present application relates to a dynamic stress aging test method and system for GaN power devices, comprising: obtaining dynamic pulse voltage stress data and temperature stress data corresponding to the GaN power device under test; wherein the dynamic pulse voltage stress data is used to periodically switch the on / off state of the GaN power device under test; obtaining test conditions based on the dynamic pulse voltage stress data and the temperature stress data; performing a dynamic stress aging test on the GaN power device under test according to the test conditions, and collecting electrical parameters of the GaN power device under test during the stress process; obtaining test results based on comparison of the electrical parameters with preset failure thresholds, and reflecting the reliability of the GaN power device in a more realistic and rigorous manner by applying a dynamic pulse voltage stress that is closer to the actual operating conditions of the GaN power device under test, while simultaneously rapidly monitoring the actual degradation of the electrical parameters online during the stress application process, thereby avoiding the problem of inaccurate measurement caused by offline testing and the rapid recovery characteristics of the device.

The invention discloses a defect detection method and a defect detection device based on a semiconductor structure, and the method comprises the steps: applying a voltage to the semiconductor structure to form a stable depletion layer, recording an initial capacitance value, applying a pulse voltage to the semiconductor structure, and closing the pulse voltage, acquiring multiple groups of capacitance parameters of the capacitor of the semiconductor structure under the multiple groups of time parameters; obtaining a characteristic value and a characteristic temperature through the function relation model, the time parameter and the capacitance parameter; a curve of the characteristic value and the characteristic temperature reciprocal is established, and the capture cross section and the defect energy level of the defect are obtained through curve linear fitting; each group of time parameters comprises a first moment and a second moment, and the difference between the second moment and the first moment of each group of time parameters is an arithmetic progression. According to the method and the device, the uniformly distributed characteristic values are obtained through the multiple groups of time parameters with the arithmetic progression relation, so that a more reliable result can be linearly fitted.

The invention provides a transformer anti-short circuit capability quantitative evaluation method and system based on multi-physics field simulation mapping, and belongs to the technical field of transformer anti-short circuit capability evaluation. Comprising the following steps: obtaining structure parameters of a to-be-tested type transformer, and constructing a multi-physics field coupling simulation model; running a preset defect working condition by using the multi-physics field coupling simulation model, and calibrating an anti-short-circuit capability limit value corresponding to the defect working condition according to the running data; applying a unit pulse voltage excitation signal, and obtaining a feature vector corresponding to the defect working condition based on the frequency domain response curve; analyzing the mapping relation by using a polynomial regression algorithm to obtain an anti-short-circuit capability quantitative evaluation function; and in a power failure off-line state of the transformer, injecting a unit pulse voltage excitation signal into the winding by using a pulse frequency response tester, calculating an anti-short-circuit capability limit value corresponding to an actually measured operating temperature value according to the anti-short-circuit capability quantitative evaluation function, and evaluating the anti-short-circuit capability of the transformer in combination with a rated thermally stable current.

The invention relates to the technical field of wafer testing, and discloses a wafer aging test system and method with a dynamic gate bias and reverse bias test function, and the system comprises a main control board, an industrial control computer, a high-voltage source, a source meter, a high-voltage switching board, a test switching board, and a needle card board. Dynamic high-temperature reverse bias and dynamic high-temperature gate bias tests can be added on the basis of static high-temperature reverse bias and reverse bias tests, higher requirements for SiC power device reliability testing equipment in the industry are met, stress borne by a chip under the actual working condition can be simulated, and the reliability of the SiC power device is improved. And the threshold voltage is monitored on line in real time while the pulse voltage is implemented, so that the reliability of the chip can be better evaluated.

The invention discloses a wide-temperature-range solid insulation space charge measurement method, and belongs to the technical field of electrical insulation test and dielectric physical measurement. A solid insulation sample is mounted between double-layer composite electrode modules in a closed high-low temperature test cavity, and a flexible compensation gasket is adopted to absorb thermal expansion difference; a PID closed-loop control system is utilized to realize accurate and stable control of the temperature of the sample in a wide temperature range; applying a direct-current bias voltage and pulse voltage superposition signal, and collecting an acoustic signal generated by space charge displacement through a wide-temperature-range PVDF piezoelectric sensor module; and based on a sound velocity and sensitivity temperature calibration curve established by a pre-experiment, carrying out deconvolution processing on a sound wave signal to correct a temperature dependence error, and finally obtaining accurate space charge density distribution at different temperatures. According to the invention, the precision and reliability of space charge measurement of the solid insulating material in a wide temperature range are effectively improved.

The invention discloses a plasma processing device and a working method thereof, and the plasma processing device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly; the direct current power supply and the first bias radio frequency power supply are electrically connected with the lower electrode assembly; the controller is used for controlling the direct-current power supply to provide a first pulse voltage for the lower electrode assembly, controlling the first bias radio frequency power supply to provide a first bias radio frequency voltage for the lower electrode assembly, and adjusting the phase difference between the first pulse voltage and the first bias radio frequency voltage to change the voltage of a plasma sheath layer on the surface of the substrate, the frequency of the first pulse voltage is consistent with the frequency of the first bias radio frequency voltage. The device has the advantages that the direct-current power supply, the first bias radio-frequency power supply and the controller are combined, the frequencies of voltages output by the direct-current power supply, the first bias radio-frequency power supply and the controller are controlled to be consistent through the controller, richer bias voltage waveforms are obtained under the condition that clutters are not introduced, and then accurate control over the substrate etching process is achieved.

The invention discloses a vein blood oxygen saturation real-time measurement system and method based on an LED light source. The method comprises the steps that 1, a pulse driving circuit outputs pulse voltage to drive LEDs with different wavelengths in a dual-wavelength LED light source to flicker alternately; collecting a photoacoustic signal by an ultrasonic transducer; 2, the ultrasonic signal processing platform receives the collected sound signals and carries out subsequent processing; 3, controlling the ultrasonic transducer to transmit an ultrasonic signal to the same measured part, and receiving an echo signal of the ultrasonic transducer; reconstructing an ultrasonic image of the measured part based on the echo signal; step 4, in the obtained ultrasonic image, positioning a vein to be analyzed and an adjacent artery thereof, and positioning the vein in the ultrasonic image; 5, the arterial oxygen saturation value of the whole body is measured through a finger clamping type pulse oximeter, and quantitative calculation of the venous oxygen saturation is achieved; and step 6, carrying out pixel-level fusion on the oxyhemoglobin saturation information and the ultrasonic image, and realizing visualization on the same frame of ultrasonic image.

A high-frequency power supply device includes a first power supply that outputs a high-frequency AC voltage having a first frequency, a second power supply that outputs a DC pulse voltage including one or more continuous pulse waveforms, a matching box that receives the high-frequency AC voltage, performs impedance matching such that impedance viewed from the first power supply becomes constant, and outputs the high-frequency AC voltage, a filter that receives the DC pulse voltage, filters the DC pulse voltage, and outputs the DC pulse voltage to a pulse-power input terminal of a load, and an IMD suppression circuit that includes a first inductor having predetermined inductance provided between the matching box and an AC-power input terminal of the load, receives the high-frequency AC voltage, allows the input high-frequency AC voltage to pass through the first inductor, and outputs the high-frequency AC voltage to the AC-power input terminal of the load.

Catheter systems and methods for the selective and rapid application of DC voltage to drive irreversible electroporation are disclosed herein. In some embodiments, an apparatus includes a voltage pulse generator and an electrode controller. The voltage pulse generator is configured to produce a pulsed voltage waveform. The electrode controller is configured to be operably coupled to the voltage pulse generator and a medical device including a series of electrodes. The electrode controller includes a selection module and a pulse delivery module. The selection module is configured to select a subset of electrodes from the series of electrodes. The selection module is configured identify at least one electrode as an anode and at least one electrode as a cathode. The pulse delivery module is configured to deliver an output signal associated with the pulsed voltage waveform to the subset of electrodes.

The invention belongs to the technical field of lithium batteries, and particularly relates to a method for forming an SEI film on the surface of a silicon anode. The invention provides a technical scheme for forming SEI through pulse voltage driving customization, parameters such as pulse voltage amplitude, pulse voltage high and low potential duration time and pulse time are reasonably designed, an SEI film with a specific component proportion and a microstructure is induced to be formed on the surface of an electrode, the first coulombic efficiency of a silicon anode is remarkably improved, and the service life of the silicon anode is prolonged. The irreversible capacity loss is reduced, meanwhile, the interface stability is enhanced, and a brand new SEI regulation and control strategy is provided for the development of the high-energy-density lithium ion battery.

To prevent liquid sloshing caused by switching a coil to be energized in a transport device. A transport device that transports an object to be transported provided with a magnetic body, the transport device includes: a plurality of coils configured to generate a thrust for transporting the object to be transported; a coil drive unit configured to apply a pulsed voltage to each of the plurality of coils; and a calculation unit. When switching a coil to be energized, the calculation unit determines a width of the pulsed voltage such that a speed or an acceleration of the object to be transported is stabilized based on a position of the object to be transported and a time at which the object to be transported passes through the position or a current flowing through an energized coil in a predetermined period before switching the coil to be energized, and outputs the determined width to the coil drive unit.

The invention relates to a cable joint partial discharge signal magnetic sensing method and device based on a tunneling magnetoresistance effect, and the method comprises the steps: setting a plurality of flexible installation monitoring points at a shielding layer of a to-be-detected high-voltage cable joint, and installing TIT sensing modules respectively; partial discharge pulse voltage signals are respectively sensed through the tunneling magnetoresistance effect sensing unit, and position information is respectively acquired through the inertial navigation sensing unit; and performing signal processing on the partial discharge pulse voltage signal to obtain multiple paths of digital signals, respectively performing difference and combination calculation to generate a map and a difference signal, inputting the map and the difference signal into a neural network model to obtain a discharge fault type result, and processing each piece of position information according to a position amplitude weighting algorithm to obtain a discharge fault position result. Compared with the prior art, the system has the advantages of integration, low power consumption, strong anti-interference capability, accurate result and the like, and is very suitable for online measurement and positioning of partial discharge defects at high-voltage cable joints in an outdoor environment.

1. Name of the product in this design: Pulse Power Supply. 2. Purpose of this design: This design is used to provide base voltage and pulse voltage for the load electric field. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

The present disclosure relates to a display device including a self-luminous device. The display device includes a plurality of pixels. Each of the plurality of pixels includes: a first node controller that applies a data voltage to a first node; a second node controller that shifts the voltage of a second node from a low-level driving voltage to a turn-on pulse voltage; a third node controller that applies a reference voltage having a turn-on level to a third node during a first period of a frame based on the voltage of the second node as a low-level driving voltage, and applies a low-level driving voltage to the third node during a second period of a frame based on the voltage of the second node as a turn-on pulse voltage; a driving transistor including a gate and a first electrode that is driven with an on-duty cycle during the first period and with an off-duty cycle during the second period based on the voltage of the third node; and a light-emitting device including an anode and a cathode. The light-emitting device emits light during the first period and does not emit light during the second period.

This disclosure provides a signal monitoring method and apparatus, electronic devices, computer-readable storage media, and computer program products applicable to an electro-optic modulator. The signal monitoring method includes inputting a modulated voltage signal to the modulation circuit of an electro-optic modulator, the modulated voltage signal being obtained by superimposing a carrier voltage signal and a pulse voltage signal, wherein the amplitude of the carrier voltage signal is greater than the half-wavelength voltage Vpi of the electro-optic modulator and the amplitude of the pulse voltage signal is less than the peak-to-peak value Vpp of the carrier voltage signal; obtaining a photoelectric conversion detection signal corresponding to the output optical signal of the electro-optic modulator; and monitoring the presence of the pulse voltage signal in the modulated voltage signal based on the photoelectric conversion detection signal.

The utility model discloses a kind of postoperative atrial fibrillation monitoring alarm systems, it is related to the technical field of atrial fibrillation monitoring, and it includes: main control module, detection module, storage module, display module, input-output module and alarm module;Detection module detects the electrocardiosignal, pulse voltage signal and heart sound signal of postoperative patient, sends to main control module;Main control module carries out sampling to electrocardiosignal, pulse voltage signal and heart sound signal, and stores to storage module;According to the instruction of input-output module, the signal after selection sampling is displayed through display module, and the signal stored is selected from storage module and is displayed through display module;Threshold comparison unit of main control module sends signal to alarm module according to heart rate signal, pulse signal, heart sound signal and threshold value, and alarm module sends alarm prompt.The utility model can monitor the sign data of postoperative patient and send alarm, remind medical staff to handle in time, reduce the influence of postoperative atrial fibrillation on patient recovery.