1173 results about "Pulse voltage" patented technology

Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

The invention discloses a battery health state estimation method and device, equipment, a storage medium and a product, and relates to the technical field of battery health management, and the method comprises the steps: carrying out the preprocessing of a collected retired lithium ion battery sample, and obtaining pulse voltage response data under different battery charging states; inputting the pulse voltage response data into a physical constraint diffusion model to generate pulse voltage response characteristic data; generating a battery health state estimation model according to the pulse voltage response characteristic data and the regression model; and performing health state estimation on the to-be-evaluated battery according to the estimation model. According to the method, the pulse voltage response data is extracted from the multi-dimensional retired lithium ion battery sample, then the battery health state estimation model is generated through the physical constraint diffusion model and the regression model, and then the battery health state is estimated according to the estimation model. According to the method, the SOH of the retired power batteries in different dimensions can be quickly and accurately estimated, and the energy consumption in the estimation process is low.

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

Embodiments of the disclosure include apparatus (e.g., plasma processing systems) and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, which generally includes delivering a radio frequency (RF) waveform at a frequency for a first period of time using a RF generator and then halting the delivery of the RF waveform for a second period of time, and delivering a pulsed voltage waveform at a first voltage for at least a portion of a third period of time using a pulser, wherein the delivery of the pulsed voltage waveform overlaps with the delivery of the RF waveform during a portion of the second period of time.

The invention discloses an insulation resistance and capacitance measuring circuit and method based on monopulse double-edge analysis, and relates to the related field of the electrical insulation online monitoring technology, and the circuit comprises a detected object and an insulation detection circuit. The insulation detection circuit comprises a controlled pulse voltage source, a coupling resistance network, a current sensor, a switch control module, a signal modulation circuit and a processor. The measurement method implemented based on the circuit comprises the following steps: injecting a common-mode voltage pulse into a transmission line of the power transmission system by adopting a pulse transmitter; pulse current response is collected in real time, a current oscillogram is drawn, and a three-point sampling method is introduced to record a current value for insulation impedance parameter calculation; according to a load condition, a double-edge verification method is applied based on a pulse current attenuation characteristic, and insulation impedance parameters including a resistive component and a capacitive component are independently calculated by analyzing a pulse current rising edge and a pulse current falling edge. According to the invention, non-intrusive synchronous monitoring of resistive and capacitive components of line-to-ground impedance is realized, and the detection precision is improved.

The invention provides a method for testing a power device and a test circuit for realizing the test method, and the method comprises the steps: applying a negative grid voltage to a grid of a to-be-tested device, and applying a test voltage to a source and a drain of the to-be-tested device, so as to carry out the body diode bipolar degradation test of the to-be-tested device; after the body diode bipolar degradation test is performed on the device to be tested, applying a grid pre-bias voltage to the grid of the device to be tested so as to eliminate the threshold drift of the device to be tested; and after the threshold drift of the to-be-tested device is eliminated, applying double-pulse voltage to the source electrode and the drain electrode of the to-be-tested device so as to perform double-pulse test on the to-be-tested device. According to the method, the problem that the threshold voltage drift of the silicon carbide device is not fully considered in the prior art is solved by applying the grid pre-bias voltage, the double-pulse test is directly carried out after the bipolar degradation experiment of the body diode is finished, the influence of inconsistent retest time on the test result is avoided, and meanwhile, the test efficiency is remarkably improved.

The invention discloses an IGBT junction temperature on-line monitoring circuit system based on grid peak current, and the system comprises an IGBT grid driver which is used for controlling a to-be-detected IGBT to charge and discharge; the grid signal processing circuit is used for converting the grid peak current of the IGBT to be detected into a narrow pulse voltage signal, performing amplitude processing on the narrow pulse voltage signal, and outputting the narrow pulse voltage signal after the amplitude processing; the two-stage narrow pulse peak holding circuit is used for holding the narrow pulse voltage signal after amplitude processing; and the acquisition and processing circuit is used for acquiring the signal output by the two-stage narrow pulse peak holding circuit to obtain an acquisition voltage, acquiring the frequency of the driving input signal, selecting a junction temperature calibration formula according to the acquired frequency, and calculating the junction temperature of the IGBT to be measured according to the acquisition voltage and the selected junction temperature calibration formula. The junction temperature monitoring circuit is high in monitoring precision, simple in circuit structure and few in influence factors during junction temperature monitoring.

The invention relates to a single-transistor ternary content addressable memory based on a gate-induced leakage current effect and a preparation method of the single-transistor ternary content addressable memory. The memory comprises a substrate, a ferroelectric layer and a grid electrode which are arranged from bottom to top, a drain electrode doped region and a source electrode doped region are arranged in an active region of the substrate, and a drain electrode and a source electrode are respectively formed by depositing contact metal. The polarization state of the ferroelectric layer is adjusted by applying different pulse voltages to the grid electrode, and data storage and high-speed parallel search of ternary logic states (the state 0, the state 1 and the state X) are achieved. By utilizing the nonvolatile storage characteristic of the ferroelectric layer and the high-speed search characteristic of the GIDL effect, efficient ternary logic storage and data search functions are realized under extremely low area consumption, and the device has the advantages of high storage density, low power consumption, quick response and good process compatibility; the method can be widely applied to the fields of artificial intelligence, big data and efficient data processing.

The invention discloses a pipe and bar defect detection device and method, and belongs to the technical field of quality detection equipment. The pipe and bar defect detection device comprises a shell and an annular ultrasonic probe, and the shell is provided with a detection channel; the annular ultrasonic probe comprises a plurality of detection units, the plurality of detection units are connected with the shell, the plurality of detection units are arranged around the axial direction of the detection channel, and the detection units are configured to generate ultrasonic waves under the excitation of the pulse voltage and detect the tube and the bar penetrating through the detection channel, so that the structure of the tube and bar defect detection device is simplified, and the detection efficiency is improved. And the reliability of the tube and bar defect detection device is improved.

Embodiments of the present invention relate to a technology for easily adjusting a level of static electricity required for a substrate according to a semiconductor process by injecting static electricity into the substrate or removing static electricity already formed on the substrate. A static electricity control device for injecting static electricity into a substrate disposed in a vacuum chamber or removing static electricity formed on the substrate in a semiconductor processing system, according to an embodiment, comprises: a charged particle generation unit, disposed on an upper side inside the vacuum chamber, that generates charged particles including positive ions and electrons by generating a vacuum ultraviolet ray (VUV) and reacting the VUV with a process gas inside the vacuum chamber; a grid provided with a plurality of holes, disposed on a lower side of the charged particle generation unit, that selectively pass the type of charged particles downward according to an input voltage; a substrate support, disposed below the grid and having the substrate positioned thereon, that is made of a conductive material and guides the charged particles passing through the grid toward the substrate at a predetermined density according to an input bias voltage; and a static electricity control unit that controls the static electricity of the substrate by supplying a pulsed voltage to at least one of the grid and the substrate support, wherein the grid and the substrate support are arranged so as to have a separation distance that is within four times the mean free path of the process gas according to environmental conditions of the vacuum chamber.

The multiple rotation angle detection device includes a segment counter that counts segments obtained by dividing one rotation period of a rotating body into two in an angle range exceeding one rotation to generate a count value, a precision absolute angle detector that generates an absolute angle detection value within one rotation period with high resolution, and a calculation device that integrates the count value and the absolute angle detection value to generate a multiple rotation absolute angle detection value. The segment counter includes a power generation sensor, a magnetic field generation source, a sensor element, and a non-volatile memory that stores the count value and information that can identify pulse information. The pulse information includes the output state of the sensor element and the polarity of the pulse voltage. The magnetic field generation source applies an alternating magnetic field of two periods per rotation in the axial direction of the magnetic wire. When power is supplied from an external source, the calculation device performs calculation for integration using the count value stored in the non-volatile memory and the information that can identify pulse information.

A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

The invention discloses a power supply processing circuit with slow start, combination and high-side eFuse functions, and the circuit comprises a slow start module which is used for the slow start of a power supply, and the slow start time is linearly adjustable; the high-side current-limiting e-Fuse module is used for simulating a single over-current fusing function of a common fuse through two self-reset switches to carry out over-current protection when the total current of the circuit reaches a threshold value, or simulating a self-recovery fuse through a self-locking switch to carry out over-current protection in a hiccup protection mode; the low-power-consumption combination module is used for realizing low-power-consumption multi-path power supply combination through discrete semiconductor devices; and the front protection module is used for providing bypass spike pulse voltage and a reverse connection prevention function for each power supply branch. According to the circuit, the circuit design is simplified, the cost is reduced, a stable and reliable power supply is provided, and meanwhile, the circuit can be integrated into a specific board card.

The invention relates to the technical field of power electronics, and discloses a dielectric barrier discharge high-voltage series resonance system and a control method thereof. The system comprises a high-voltage series resonance circuit, an upper computer and a hardware circuit. The upper computer is electrically connected with the hardware circuit, and the hardware circuit is electrically connected with the high-voltage series resonance circuit; wherein the high-voltage series resonance circuit comprises a PFC circuit, a Buck circuit, an LC series resonance circuit, a high-voltage pulse transformer and a dielectric barrier discharge load which are connected in sequence, the high-voltage series resonance circuit converts alternating current into high-frequency high-voltage pulse voltage and provides the high-frequency high-voltage pulse voltage for the dielectric barrier discharge load, and stable dielectric barrier discharge is generated; the upper computer is used for setting parameters, the hardware circuit controls the on-off state of the Buck circuit and the LC series resonance circuit according to the parameters set by the upper computer, accurate generation and control of high-voltage pulse voltage in the dielectric barrier discharge process are achieved, and the response speed and the control precision of the system are also improved.

The invention discloses an integrated preparation method of a large-thickness high-density electrical insulation-corrosion-resistant ceramic coating on the surface of a heat dissipation substrate for a high-power device, and relates to the technical field of surface treatment of aluminum alloys and composite materials thereof. The method comprises the following steps: placing a pretreated substrate as an anode and a stainless steel plate as a cathode in a basic arc suppression type electrolyte, and performing low-temperature soft plasma electrolytic oxidation on the surface of the pretreated substrate by using an asymmetric bipolar pulse micro-arc oxidation technology to grow a large-thickness high-density ceramic layer in situ; specifically, low-temperature soft spark discharge is induced by inserting additional negative pulse voltage, the plasma temperature and energy are stabilized, spark discharge is uniform, and the density is increased by an order of magnitude, so that continuous bombardment with no damage to the surface flatness as the plasma intensity upper limit is carried out on a passive film on the surface of a substrate; and the defects such as pores and cracks are continuously healed and repaired, and the densification of the coating is promoted, so that the aluminum oxide coating with large thickness, high density, high electrical insulation and corrosion resistance is obtained.

The invention discloses an insulating material service life prediction method and device, a storage medium and computer equipment. The method comprises the following steps: setting a preset environment condition required by a test for a thermal aging test space; controlling a pulse generating device to sequentially apply multi-stage pulse voltage to the to-be-predicted insulating material in the thermal aging test space so as to sequentially carry out multi-stage radiation on the to-be-predicted insulating material by using the pulse voltage, and collecting an electrical insulation process parameter and a thermal insulation process parameter of the to-be-predicted insulating material in each radiation stage process, acquiring an electrical insulation index parameter and a thermal insulation index parameter of the to-be-predicted insulating material after each radiation stage is ended; and determining the insulation life of the to-be-predicted insulation material based on the electrical insulation process parameter and the thermal insulation process parameter in each radiation stage process and the electrical insulation index parameter and the thermal insulation index parameter after each radiation stage is ended.

A method for improving the release efficiency of bubbles on the surface of an electrode in high-current water electrolysis hydrogen production belongs to the technical field of hydrogen energy production, and the specific scheme comprises the following steps: step 1, applying pulse voltage to a proton exchange membrane electrolytic cell for water electrolysis hydrogen production, the applied pulse current being 0.5-2A, and the applied pulse voltage being 1.4-1.6 V; and 2, conveying the electrolyte deionized water to an anode chamber of the proton exchange membrane electrolytic cell so as to initiate an oxidation reaction to prepare hydrogen. According to the pulse dynamic electrolysis technology, the PEMWE high-current hydrogen production performance can be improved by adjusting the power supply mode of the power source. Besides, the voltage during the pulse interval period is zero, and the total energy consumption actually only comprises the electric energy consumption within the pulse voltage applying time, so that the pulse dynamic electrolysis technology has more advantages from the energy consumption perspective. The pulse dynamic electrolysis technology is expected to promote bubble release and relieve the polarization phenomenon in PEMWE high-current hydrogen production, and the hydrogen production efficiency and the energy utilization rate of the system are improved.

The invention discloses a light-sensing external trigger signal output device for laser far-field parameter analysis, comprising: a light signal detector, used for collecting laser signals irradiated on a target plate and outputting a pulse current signal; a signal primary amplification module, used for converting the pulse current signal into a pulse voltage signal and amplifying the pulse voltage signal; a signal superposition amplification module, used for amplifying the pulse voltage amplification signal output by the signal primary amplification module again; a laser pulse signal judgment module, comprising a comparator, used for setting a signal judgment threshold value, the comparator being connected to a monostable trigger, and the monostable trigger sending a trigger signal when the pulse signal is greater than the signal judgment threshold value set by the comparator; an MCU main control module, used for interrupt processing, trigger signal delay and output frequency setting, trigger signal output and transmitting a timing control signal to an imaging camera; a power management module, connected to an external power supply and supplying power to the remaining modules.

The invention discloses an energy consumption management system and method for a data center, and relates to the technical field of data center thermal management, and the method comprises the steps: carrying out the noise reduction of a structured data set through quantum harmonic oscillator coupling wavelet transform, and generating a real-time three-dimensional thermal distribution diagram through a Kriging spatial interpolation algorithm, solving a Navier-Stokes equation by combining the magneto-rheological grid wind resistance value, and extracting a heat flow vector; injecting pulse voltage into the microcapsule phase-change material layer according to the dual-channel execution instruction set to trigger phase-change heat absorption, reducing the viscosity of a target path by using a space gradient magnetic field, and generating a three-dimensional wind speed vector field; the real-time three-dimensional thermal distribution diagram is generated through the Kriging space interpolation algorithm, high-precision monitoring and analysis of the complex thermal environment of the data center are achieved, the accuracy of local hot spot recognition is improved, and therefore the energy utilization efficiency and the cooling effect are remarkably improved, and the purposes of reducing energy consumption and improving the operation stability and energy efficiency of the data center are achieved.

The invention belongs to the technical field of power electronics and semiconductor devices, and provides a transistor on-resistance high-precision comparison method, which comprises the following steps of: generating and outputting a direct-current voltage # imgabs0 # which can quickly adjust a numerical value and has load capacity through a direct-current voltage adjusting module; the grid driving module generates and outputs a pulse signal # imgabs3 # of which the voltage can be quickly adjusted based on the direct-current voltage # imgabs1 # and the pulse voltage # imgabs2 #; applying a pulse signal # imgabs4 # to the transistor to be measured through the power module, and measuring the on-resistance of the transistor to be measured under the gate driving voltage; and switching the gate driving voltage in the microsecond-to-nanosecond magnitude delay, and measuring the on-resistance of the transistor to be measured under the switching gate driving voltage based on the pulse signal # imgabs5 #. According to the method, the on-resistance of the transistor to be tested under different gate driving voltages can be tested in the pulse circuit, the measurement delay is shortened to several nanoseconds from several minutes of a traditional double-pulse circuit, and the performance of the transistor reliability evaluation circuit is effectively improved.

The invention discloses an image rendering method and system. The rendering method at least comprises the following steps: providing a plurality of magnetic tunnel junctions; integrating and packaging the plurality of magnetic tunnel junctions to obtain a magnetic random access memory; applying a pulse voltage to the magnetic random access memory to generate a true random number; and using the true random number to calculate a scattering model, and rendering the image. Through the image rendering method and system provided by the invention, the high-quality true random number can be efficiently generated, so that the image rendering efficiency and effect are improved, and the rendered image is more vivid and natural.

The invention discloses a low-frequency and differential-phase pulse combined electromagnetic continuous casting method, which belongs to the field of metal material preparation and processing, in the processes of semi-continuous casting, horizontal continuous casting and vertical continuous casting, A + 2B excitation coils are placed in a crystallizer jacket in the direction parallel to the central axis of a cast ingot, and A and B are integers greater than or equal to 1; the 2B excitation coils are divided into a group B1 and a group B2; a coils form a group; a power supply control system with a plurality of sets of built-in control circuits is utilized to respectively output two different currents and voltages which are applied to three groups of magnet exciting coils; one set of circuit system outputs low-frequency alternating-current voltage and sinusoidal current and generates a low-frequency alternating-current electromagnetic signal; the other set of circuit system outputs two groups of square-wave pulse voltage and zigzag pulse current; and a low-frequency electromagnetic field and a differential-phase pulsed magnetic field are applied to melt combinations with different heights in the crystallization sleeve, so that the electromagnetic utilization rate is increased, grains are refined, and the ingot casting quality is improved.

The invention relates to the technical field of pulse state recognition, in particular to an electric spark discharge pulse state recognition and control system and method.The electric spark discharge pulse state recognition and control method comprises the following steps that gap voltage is obtained, and whether the gap voltage is rising edge voltage or not is judged; comparing the gap voltage which is judged to be the rising edge voltage with a preset threshold voltage; when the gap voltage is the same as any one of the preset threshold voltages, a trigger state identifier is set to be 1, and counting is started from a preset value A1; when any one of counting stopping conditions is met, counting is stopped, the state identifier is reset, and the counting value is returned to the preset value A1; calculating delay time between two time points of counting starting and counting stopping; judging the delay time and outputting a judgment result; and performing control according to the judgment result. According to the invention, based on the pulse voltage threshold and the time characteristic, the short-circuit arc pulse and the arc discharge pulse are rapidly and accurately identified.

The invention relates to an external multi-gap lightning arrester volt-second characteristic curve estimation method and device and a medium, and the method comprises the steps: selecting at least two different standard lightning pulses to carry out the lightning stroke test of an external multi-gap lightning arrester test system, and obtaining an initial initial voltage and a corresponding initial lightning stroke damage effect value; constructing each standard lightning pulse voltage-time curve, obtaining a damage effect integral function, and obtaining an initial external multi-gap lightning arrester voltage-time curve in combination with the initial initial voltage and the initial lightning damage effect value; based on the initial voltage-time curve of the external multi-gap lightning arrester, parameter optimization is carried out by utilizing a genetic algorithm, the voltage-time curve of the external multi-gap lightning arrester is obtained, and equipment and a medium are used for realizing the method. Compared with the prior art, the method has the advantages that the volt-second characteristic curve of the external multi-gap lightning arrester is directly estimated by using the genetic algorithm, and the characteristic curve capable of accurately reflecting the influence of the lightning stroke on the power distribution network is obtained through a simple estimation method.

The invention provides a double-phase pulse circuit and a high-frequency pulse therapeutic apparatus, and relates to the technical field of medical instruments, and the double-phase pulse circuit comprises a booster circuit, N groups of pulse modulation isolation transformation circuits, an amplitude-limiting current-limiting circuit, a cascade circuit, a double-phase wave modulation circuit and a main controller, the boost circuit performs pulse modulation and boost processing on the output DC voltage of the target DC power supply to obtain an initial pulse voltage signal; n groups of pulse modulation isolation transformation circuits respectively perform isolation boosting processing on the initial pulse voltage signals to obtain N high-voltage pulse signals; the amplitude-limiting current-limiting circuit performs amplitude-limiting current-limiting processing on the N high-voltage pulse signals to obtain N high-voltage square-wave pulse signals; performing cascade processing on the N high-voltage square-wave pulse signals to obtain a target square-wave pulse signal; and performing dual-phase modulation on the target square wave pulse signal to obtain a target dual-phase pulse signal. According to the technical scheme, the effect of improving the safety of the double-phase pulse circuit is achieved.

The utility model provides a circuit system for driving an inductive load by a switching power supply. The circuit system comprises the switching power supply and the inductive load, the pulse voltage suppression module, the reverse electromotive force isolation module and the reverse electromotive force absorption module are connected between the switching power supply and the inductive load; the switching power supply, the inductive load, the pulse voltage suppression module, the reverse electromotive force isolation module and the reverse electromotive force absorption module are connected in the same circuit. According to the utility model, the technical problem that the operation of driving the inductive load by the switching power supply is difficult in the prior art is solved, and the reverse electromotive force generated by the inductive load is blocked and cannot reach the switching power supply by utilizing the unidirectional conductivity of the pulse voltage suppression module. And meanwhile, weak surge voltage transmitted from leakage current generated by the pulse voltage suppression module to the output end of the switching power supply is suppressed. The reverse electromotive force absorption module is used for absorbing part of reverse electromotive force current, reducing reverse electromotive force voltage and lowering the reverse withstand voltage requirement of the reverse electromotive force isolation module.

Disclosed is a memory array testing system based on FPGA, which is used to test a memory that has not been packaged and has not had peripheral circuits added, comprising: an FPGA, which serves as a control module for the entire testing system; an excitation source, which is used to output an operating voltage for a memory cell; a read circuit, which is used to read the resistance value of a selected memory cell; an array gating module, comprising a row gating circuit and a column gating circuit, and used to select a single memory cell in an array; an upper computer, which is used to, according to a user operation, output a pulse width and amplitude of a pulse voltage, a step time, step voltage and number of scanning points of a scanning voltage, and a control signal of a word line and a bit line of a selected memory cell, and present the resistance data received from FPGA in the form of a chart. The present invention constructs a test circuit on a PCB, effectively reducing testing time and improving testing efficiency compared with traditional probe tests, and performs prototype verification before constructing a peripheral integrated circuit for a memory array.

The invention discloses a carbon dioxide electrolysis system based on pulse voltage regulation and control. The system comprises a pulse voltage source module, an electrolytic reaction module, a parameter regulation and control module, a time sequence optimization module, a reference setting module and a decision execution module. The pulse voltage source module generates an adjustable pulse voltage sequence and sets a parameter interval; the electrolytic reaction module divides reaction units and analyzes current response to generate feature vectors; the parameter regulation and control module extracts key indexes to establish voltage regulation rules; a time sequence optimization module identifies a time correlation mode dynamic calibration index and calculates a voltage offset; the reference setting module deduces an optimal pulse threshold value and generates a deviation sequence; and the decision execution module analyzes the deviation sequence to generate a regulation and control scheme. The system realizes pulse voltage dynamic optimization and reaction unit refined management through multi-module cooperation, improves the selectivity, stability and energy efficiency of carbon dioxide electrolysis, and is suitable for the field of efficient conversion of carbon dioxide.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

The invention discloses a pulse modulation plasma jet generation method and application thereof, and particularly relates to the field of microelectronics, and the method comprises the following steps: I, constructing a multidisciplinary association database, modulating a high-voltage pulse power supply, and optimizing pulse waveform parameters at the same time; iI, pulse voltage is applied through a high-voltage electrode to generate plasma jet, a coupling simulation model is established, and the evolution process of the plasma jet is simulated; according to the method, the requirement of manual operation can be reduced, subjective deviation and information loss are avoided, the robustness of resisting environmental interference is improved, and the method can adapt to the high-speed and high-precision process requirement; the testing of invalid parameter combinations can be avoided, the searching capability is improved, the experiment or simulation frequency is reduced, the anti-interference capability of the jet system on working condition fluctuation is improved, and the maintenance frequency is reduced.