21531results about "Electronic switching" patented technology

The invention discloses a self-adaptive nanosecond driving protection method for a high-voltage IGBT power module. The method comprises the steps that data such as high-voltage side voltage, collector current, grid voltage and junction temperature are collected and preprocessed, and standardized feature vectors are obtained; extracting statistical features, frequency domain features and trend features to obtain a comprehensive feature vector; density clustering is carried out based on historical fault data, and an extreme value model is established by using generalized Pareto distribution to generate an optimized threshold value; constructing a time sequence feature matrix, predicting a fault probability by adopting a time sequence convolutional network and a long-short term memory network, and generating a protection strategy parameter; and generating an optimal driving waveform and a control signal, and updating parameters according to an actual response effect. According to the invention, predictive protection and nanosecond-level precise control of faults are realized, and the reliability and performance of the high-voltage IGBT module are remarkably improved.

A driving method of a transcranial magnetic stimulation 3D coil device is disclosed, which includes: determining first and second signal peaks corresponding to a specified rotating magnetic field direction, in which the first and second signal peaks respectively correspond to first and second coils in multiple coils; providing a first pulse current having the first signal peak to the first coil, in which the first pulse current signal stimulates the first coil to provide a first magnetic field; providing a second pulse current signal having a second signal peak to the second coil, in which the second pulse current signal stimulates the second coil to provide a second magnetic field, in which the first magnetic field and the second magnetic field form a rotating magnetic field having the specified rotating magnetic field direction.

A portable computer includes a display portion comprising a display and a base portion pivotally coupled to the display portion. The base portion may include a bottom case and a top case, formed from a dielectric material, coupled to the bottom case. The top case may include a top member defining a top surface of the base portion and a sidewall integrally formed with the top member and defining a side surface of the base portion. The portable computer may also include a sensing system including a first sensing system configured to determine a location of a touch input applied to the top surface of the base portion and a second sensing system configured to determine a force of the touch input.

The invention relates to an optically controllable switching device having a first and second line section, between which an optically controllable switch (T2) is inserted, and having a sensor element (SE). The optically controllable switch (T2) disconnects or connects depending on an optical switching signal (SB), whether the switch is "on" or "off". The sensor element (SE) comprises a carrier material (TM) with crystals comprising one or more paramagnetic centers (NV). When irradiated with pump radiation (LB), the sensor element (SE) emits fluorescent radiation (FL) which depends on the magnetic flux density B at the location of the sensor element (SE). A line current (I LTG) in the first line section of the line (LTG) generates a magnetic field with a flux density B which, with sufficient current strength, influences the fluorescent radiation (FL) from one or more paramagnetic centers (NV). The optically controllable switching device has first means (LWL1, PL1, LIV) for irradiating the one or more paramagnetic centers (NV) with pump radiation (LB) and second means (LWL2, F1, PD, LIV) for detecting and separating the fluorescent radiation (FL) and for detecting a measured value signal which depends on the intensity of the fluorescent radiation (FL) and / or on the phase shift of the modulation signal of the temporal profile of the intensity of the fluorescent radiation (FL). The optically controllable switching device has third means (LIV) for generating an optical switching signal (SB) and for controlling the state of the optically controllable switch (T2) using this optical switching signal (SB).The optical switching signal (SB) depends on the intensity of the fluorescence radiation (FL) and / or on the phase shift of the modulation signal of the temporal course of the intensity of the fluorescence radiation (FL).

The invention relates to the technical field of gallium nitride gate drivers, and discloses a design method and system of a gallium nitride gate driver, and the method comprises the steps: carrying out the working signal collection of the gallium nitride gate driver, obtaining original waveform sampling data, and building a signal integrity model under the action of electromagnetic interference; separating the original waveform sampling data into an effective driving signal, a low-frequency interference signal and a high-frequency noise signal, and extracting characteristic parameters to obtain a signal characteristic parameter set; switching time and circuit power consumption are set as optimization variables, constraint conditions are set according to the signal integrity model, and an optimization objective function is obtained; performing online identification and optimization calculation on the driving parameters to obtain a driving control parameter sequence; according to the method, the adaptive capacity of the driver to the change of the working condition is improved, and meanwhile, the stability and the reliability of the driving waveform are ensured.

The invention relates to a pulse width modulation dead zone nonlinear error suppression method, system and device, and the method comprises the steps: obtaining delay characteristic data and PWM signal parameters of a switching device of a target circuit, and carrying out the initialization parameter configuration, and obtaining initial configuration parameters; acquiring real-time current data of the target circuit, and performing compensation comparison with the initial configuration parameters to obtain a dynamic compensation interval; acquiring an actual conduction state of the switching device, and performing dead zone time adjustment on the actual conduction state according to the dynamic compensation interval to obtain a critical safe dead zone value; duty ratio correction is carried out based on the critical safety dead zone value and the dynamic compensation interval, and a directional compensation amount is obtained; and carrying out waveform harmonic distortion degree and dynamic response test verification on the directional compensation amount and the initial configuration parameters to obtain a dead zone compensation control strategy. According to the method, the dead zone demand under the actual working condition can be evaluated more accurately, and the precision of dead zone compensation is improved.

The present disclosure comprises: a semiconductor switch unit including a first semiconductor switch having a drain terminal connected to a power grid, a second semiconductor switch having a drain terminal connected to a load, and first and second diodes each having a positive electrode and a negative electrode respectively connected to a source terminal and the drain terminal of each semiconductor switch; a bypass circuit which connects the drain terminal of the first semiconductor switch to the source terminal of the second semiconductor switch; and a control unit which, when the power grid is connected to the semiconductor circuit breaker, supplies a current to the load through the bypass circuit and the second diode by closing the bypass circuit while the first and second semiconductor switches are turned off, and which, when preset conditions are met, turns on the first and second semiconductor switches so as to open the bypass circuit so that a current is supplied to the load through the semiconductor switch unit.

An input mechanism, such as a crown, detects amounts of applied force. In various examples, an assembly including an input mechanism has an enclosure; a stem coupled to the enclosure such that the stem is rotatable, translatable, and transversely moveable with respect to the enclosure; a sensor, coupled between the stem and the housing, to which force is transferred when the stem moves with respect to the housing; and a processing unit coupled to the sensor. The processing unit is operable to determine a measurement of the force, based on a signal from the sensor.

The invention provides a temperature compensation method and device for a silicon carbide MOS drive control chip, and the method comprises the steps: obtaining a junction temperature-electrical parameter set of a silicon carbide MOS, and carrying out the thermoelectric coupling simulation modeling processing of a junction temperature-electrical parameter mapping data set, and obtaining three-dimensional temperature-efficiency characteristic data; performing real-time parameter analysis and dynamic execution on the three-dimensional temperature-efficiency characteristic data to obtain an optimized switching characteristic waveform; extracting the optimized switching characteristic waveform frequency domain characteristics, and generating a dynamic frequency modulation parameter; and performing dead time iterative optimization on the dynamic frequency modulation parameters to obtain a control parameter combination of the silicon carbide MOS.

The invention discloses a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving circuit and a control method thereof, the SiC MOSFET driving circuit comprises an active current source driving circuit, a SiC MOSFET, a load current detection circuit, a drain-source inter-electrode voltage overshoot detection circuit, an analog-to-digital conversion module and an FPGA (Field Programmable Gate Array) module, and a self-adaptive adjustment algorithm is built in the FPGA module. The load current detection circuit and the drain-source inter-electrode voltage overshoot detection circuit have low requirements for real-time performance, use of high-speed simulation devices is avoided, hardware design cost is reduced, a self-adaptive adjustment algorithm can adjust SiC MOSFET gate drive parameters in real time according to output of the load current detection circuit and the drain-source inter-electrode voltage overshoot detection circuit, and the self-adaptive adjustment algorithm can adjust the gate drive parameters of the SiC MOSFET in real time according to the output of the drain-source inter-electrode voltage overshoot detection circuit. Therefore, overshoot and switching loss are self-adaptively balanced, and safe operation of the SiC MOSFET is ensured. The technical problems that a SiC MOSFET driving circuit driven by an active grid is high in hardware cost and is difficult to balance voltage and current overshoot and switching loss are solved.

The present invention discloses an integrated circuit chip with an address code, a key, and a mechanical keyboard. The integrated circuit chip contains a programmable address code, integrates a magnetic induction circuit, a GRB magic color drive circuit, and includes a power pin, a ground pin, and a data pin. The power pins of n integrated circuit chips are connected in parallel to share a power network VCC, the ground pins are connected in parallel to share a ground network GND, and the data pins are connected in parallel to share a data line network DIO connected to an MCU, and data information is transmitted on the data line network DIO. Another integrated circuit chip with an address code only requires a power network VCC and a ground network GND, and data information is modulated and transmitted on the power network, which greatly saves wiring space, reduces the difficulty of PCB design, and exponentially reduces the number of electronic components. In addition, a variety of different customized code sending methods and working modes are provided, making its application simpler, more efficient, and more reliable.

The invention provides a CAN bus driving circuit, a CAN transceiver and a CAN bus structure, and the CAN bus driving circuit comprises a bias generation module which generates a first bias signal and a second bias signal; the current slope control module is connected to the output end of the bias generation module, receives the sending signal, and is used for generating a first current and a second current and carrying out step-by-step control on the sizes of the first current and the second current; one end of the first high-voltage driving module is connected with the first current, and the other end outputs a first output signal for providing high-voltage protection; one end of the second high-voltage driving module is connected with second current, and the other end outputs a second output signal for providing high-voltage protection; the first output signal and the second output signal form a differential signal. According to the invention, not only is the high-voltage protection function realized, but also the provided bus signal has excellent stability and symmetry, so that the electromagnetic radiation performance is relatively low.

Disclosed are a method and an apparatus of digital feedback based adaptive delay time control for a high efficiency active rectifier. According to the present invention, provided is an apparatus for digital feedback based adaptive delay time control, which adaptively compensates a driving delay of a switch by controlling a time of a delay circuit through a digital feedback-based compensation technique, and operate the switch at an appropriate timing in spite of changes in operation environments such as an input voltage and a load to increase the efficiency of an AC-DC rectifier.

A control device (100) for controlling an actuator (200) for actuating an optical element (310) of an optical system (4, 10), with an amplifier (110) which is configured to receive a supplied supply voltage (V1) at an input node (K1) and to provide a drive voltage (V2) for the actuator (200) at an output node (K2), and a supply device (120) coupled to the input node (K1) for providing the supply voltage (V1), which has a series connection (130) of a plurality N, with N ≥ 2, of DC / DC converters (131-133) for providing a respective DC voltage and a number M, with M ≥ 1, of further DC / DC converters (141) that can be connected in series to the series connection (130) for providing a DC voltage.

The embodiment of the invention provides a signal processing circuit, a chip and electronic equipment. The signal processing circuit comprises an analog-to-digital conversion module and a signal amplification module, the first chopping switch module is used for modulating the differential input signal to high frequency under the control of a preset clock signal and inputting the signal to the signal amplification module; the second chopping switch module is used for modulating the differential output signal output by the signal amplification module to a low frequency under the control of a preset control signal and inputting the low frequency to the analog-to-digital conversion module; and the second chopping switch module also enables the analog-to-digital conversion module to establish sampling under the control of a preset control signal. According to the application, the second chopping switch module is multiplexed as a sampling switch of the analog-to-digital conversion module, so that the problem that on-resistance is increased due to the fact that a chopping demodulation switch and the sampling switch are arranged at the same time can be avoided.

The invention discloses a bidirectional silicon controlled rectifier overvoltage protection circuit and a solid-state circuit breaker, and belongs to the technical field of power electronics, the overvoltage protection circuit comprises a bidirectional silicon controlled rectifier, a driving circuit of the bidirectional silicon controlled rectifier and a piezoresistor, the driving circuit comprises a driving resistor and a driving capacitor, and the driving resistor and the driving capacitor are connected in series. The other end of the driving capacitor is connected with the gate pole of the bidirectional silicon controlled rectifier, the other end of the driving resistor is connected with the piezoresistor, and the other end of the piezoresistor is connected with the first power end of the bidirectional silicon controlled rectifier. According to the scheme, low-cost, small-size, low-clamp-voltage and low-bus-voltage-difference overvoltage protection can be realized for the solid-state circuit breaker.

A receiver circuit is configured to generate a reception symbol from a multi-level signal. The receiver circuit is configured to generate three compensation signal pairs from an input signal pair to perform a loop unrolled decision feedback equalization operation. A first summing circuit is configured to equalize the input signal pair with a first offset to generate a first compensation signal pair, and a second summing circuit is configured to equalize the input signal pair with a second offset to generate a second compensation signal pair. An averaging circuit is configured to average the first compensation signal pair and the second compensation signal pair to generate a third compensation signal pair.

Aspects of this disclosure relate to generating a bias signal with magnetic field cancellation. A voltage modulator circuit can generate a bias voltage that tracks an envelope of a radio frequency signal. For example, the bias signal can track the envelope of the radio frequency signal that is amplified by a power amplifier on a symbol-by-symbol basis. The voltage modulator circuit includes one or more pairs of switches with magnetic field cancellation.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

A transient voltage surge protection circuit includes a discharge transistor having a drain coupled to a first point of a voltage input bus, and a source coupled to ground; an RC string having a first capacitor and a first resistor coupled in series; a first charge transistor having a drain coupled to the drain of the discharge transistor, a source coupled to the gate of the discharge transistor, and a gate coupled to a mid-point between the first capacitor and the first resistor; a second charge transistor having a drain coupled to the drain of the discharge transistor and a gate coupled to the gate of the first charge transistor; a Zener diode string coupled to a second point of the voltage input bus and coupled to a third and fourth resistors in series. A midpoint between the third and fourth resistors is coupled to the second resistor.

A steering device 1 accepts steering operations by a driver and comprises: an annular rim 20; a hub 23 located on the inner side of the rim 20; spokes 25L, 25R which extend radially from the hub 23 and which are connected to a rim inner circumference 21 of the rim 20; electrode devices 55L, 55R provided in the spokes 25L, 25R, respectively; and a steering control device 4 that detects a change in the electrostatic capacitance between the electrode devices 55L, 55R and a ground connection. The electrode device 55L comprises a first electrode 56L having flat parts 561L, 562L, 563L directed toward the rim 20 and the electrode device 55R comprises a first electrode 56R having flat parts 561R, 562R, 563R directed toward the rim inner circumference 21.

A circuit includes a high-side driver having a high-side slew control input, a high-side drive input and a high-side drive output. A low-side driver has a low-side slew control input, a low-side drive input and a low-side drive output. Drive control circuitry has a high-side drive control output, a low-side drive control output, and a slew control output. The high-side drive control output is coupled to the high-side drive input, the low-side drive control output is coupled to the low-side drive input. The slew control output is coupled to at least one of the high-side slew control input and the low-side slew control input, and the drive control circuitry is configured to provide a slew control signal at the slew control output. The high-side and / or low-side driver is configured to modulate a slew rate of a drive signal at a respective drive output thereof based on the slew control signal.

The invention discloses a power-on reset circuit, and relates to the technical field of integrated circuits, in order to eliminate static power consumption of the power-on reset circuit and reduce power consumption of the power-on reset circuit, the power-on reset circuit comprises a discharge delay circuit, a current mirror circuit and a buffer circuit; the discharge delay circuit comprises a capacitor and an NMOS (N-channel Metal Oxide Semiconductor) tube M4, and the NMOS tube M4 is used for discharging the capacitor; the current mirror image circuit comprises an NMOS tube M2, an NMOS tube M3 and a PMOS tube M9. The grid electrode of the NMOS tube M2 and the grid electrode of the PMOS tube M9 are respectively connected with the output end of the buffer circuit; the grid electrode of the NMOS tube M3 is respectively connected with the source electrode of the PMOS tube M9, the drain electrode of the NMOS tube M2 and the grid electrode of the NMOS tube M4; the current mirror image circuit is used for turning off the NMOS tube M2 after the reset signal is ended, and pulling up the drain electrode voltage of the NMOS tube M3 to the power supply voltage through the PMOS tube M9, so that the NMOS tube M3 enters a deep linear region, and a direct current path from the power supply to the ground in the current mirror image circuit is cut off; and the buffer circuit is used for outputting a reset signal according to the voltage change of the capacitor in the discharge delay circuit.

The invention relates to a simple and reliable touch control switch. The simple and reliable touch control switch consists of a 12-V direct-current power supply, a one-way silicon controlled rectifier 1 (SCR1) trigger circuit, a one-way silicon controlled rectifier 2 (SCR2) trigger circuit, a relay control circuit and a load RL circuit. A conventional mechanical self-locking rocker switch or a toggle switch has the defects that actions are mechanical, operating actions are different because of persons, a contact is easy to jitter, a contact is easy to ablate, abrade and the like. The touch control switch is realized by only using a small number of common components and two touch metal pieces, namely an on-load circuit is switched on by touching a touch electrode once, and an off-load circuit is switched off by touching the touch electrode once. The overall touch control switch is made of discrete components, and strong electricity can be effectively isolated from weak electricity through a relay, so that the power supply of a load can use alternating current and also can use direct current. Therefore, the touch control switch has a certain function in the field of household appliances, industrial automation, and optical, mechanical and electrical integration.

A method of generating a coupling gate between qubits and a superconducting integrated circuit providing a pulse source are discussed. The method includes energizing a power line connected to a pulse source, applying a signal to a control line in communication with a coupler, the coupler in communication between the two qubits, and applying a second signal to a control line in communication with a resonator. The method further includes inducing a tone on a transmission line that selectively communicates with the resonator to bias the resonator, the resonator coupling a signal to the pulse source in combination with the power line, and applying a third signal to a pulse source control line in communication with the pulse source, the pulse source applying a pulse to the coupler in response to the third signal to couple the two qubits for a duration of the coupling gate.

An RF transmitter (1) having a gate-segmented power output stage (2) and a digital driver (5). The gate-segmented power output stage (2) includes a field-effect transistor with a plurality of gate fingers (32) and drain fingers (31) that define a gate periphery. The field-effect transistor comprises a plurality of power output stage segments (3) that each correspond to a respective part of the gate periphery, and that each have a respective power output stage segment input (4). The digital driver (5) has control outputs (6) which are connected to corresponding ones of the respective power output stage segment inputs (4), and is configured for individually switching each of the power output stage segments (3) between an on mode and a cut-off mode in dependence of one or more input signals to obtain a modulated RF carrier signal at an output (7) of the gate-segmented power output stage (2).

An electronic sensor module for a handle may have one sensor unit having a movable sensor element and a fixed sensor element which is arranged spaced apart from and opposite the movable sensor element. The module may also have an electronics unit which is electrically connected to the sensor elements for triggering a switching signal and on which the fixed sensor element is arranged. At least the movable sensor element may be encapsulated at least in some regions by a foam material and is designed as an integrated component in the form of a preassembly unit. Connection elements of the movable sensor element protrude from the foam material in a preassembly state and are connected to the electronics unit in an assembled state. A handle module and to a movable vehicle element are also described.

Techniques are provided to utilize a common node of a solid-state AC switch as a DC ground reference node for DC power generation and control circuitry of an intelligent electrical device (e.g., intelligent dimmer switch, intelligent circuit breaker, etc.). For example, a device comprises a solid-state AC switch, and a power converter circuit. The solid-state AC switch comprises a first solid-state switch and a second solid-state switch which are coupled back-to-back to common node of the solid-state AC switch. The power converter circuit is coupled to the common node of the solid-state AC switch and is configured to convert an AC voltage to a DC voltage. The common node of the solid-state AC switch is utilized as a DC ground node of the power converter circuit, and the DC voltage output from the power converter circuit is ground referenced to the common node of the solid-state AC switch.

The invention relates to a purely optical fuse with a first and second line section, between which an optically controllable switch (T2) is inserted, and with a sensor element (SE). The sensor element (SE) comprises a carrier material (TM) with crystals comprising one or more paramagnetic centers (NV). When irradiated with pump radiation (LB), the sensor element (SE) emits fluorescent radiation (FL) that depends on the magnetic flux density B at the location of the sensor element (SE). A line current (I LTG) in the first line section of the line (LTG) generates a magnetic field with a flux density B which, with sufficient current strength, influences the fluorescence radiation (FL) from one or more paramagnetic centers (NV). The optically controllable switching device has first means (LWL1, PL1, LIV) for irradiating the one or more paramagnetic centers (NV) with pump radiation (LB) and second means (LWL2, F1, PD, LIV) for detecting and separating the fluorescence radiation (FL) and for detecting measured values which depend on the intensity of the fluorescence radiation (FL) and / or on the phase shift of the modulation signal of the temporal progression of the intensity of the fluorescence radiation (FL). The purely optical fuse compares these measured values with intensity and / or phase shift threshold values.The optically controllable switching device has third means (LIV) for generating an optical switching signal (SB) depending on the comparison result and for controlling the state of the optically controllable switch (T2) with this optical switching signal (SB).

The invention provides an intelligent electronic switch for anomaly detection, a chip, a chip product and an automobile, in the intelligent electronic switch, a control circuit is used for controlling a power switch to be turned on or turned off, and a clamping circuit obtains a drain-source voltage value of the power switch and outputs an adjustment signal according to the drain-source voltage value and an accessed reference voltage value; the intelligent electronic switch further comprises an abnormal detection circuit, the abnormal detection circuit obtains the gate-source voltage value of the power switch when receiving the adjustment signal, and the abnormal detection circuit detects the gate-source voltage value of the power switch when receiving the adjustment signal. And when the gate-source voltage value exceeds the preset voltage interval, outputting an abnormal signal to indicate that the load is abnormal. The invention provides a load anomaly detection scheme which can play a role by means of the clamping function of the clamping circuit, and the purpose of detecting whether the load is abnormal or not under the condition that the drain-source voltage value of the clamping power switch is constant is achieved.