23066results about "Digital storage" patented technology

A nonvolatile memory device includes a plurality of latch groups, an address controller, an encoder, and a buffer. The address controller controls an input address and an output address to indicate one of the plurality of latch groups. The encoder receives sector data from a latch group corresponding to the output address among the plurality of latch groups and also compresses the received sector data. The buffer stores the compressed sector data. Among the plurality of latch groups, the compressed sector data stored in the buffer is overwritten in a latch group corresponding to the input address.

Apparatuses, systems, and methods for managing access to metadata stored at a memory. To manage access to metadata, a mode register is configured to receive a metadata enable setting and to provide a metadata enable signal based on the metadata enable setting. A metadata access control circuit configured to receive a column address identifying a particular column to be accessed within a memory array. The metadata access control circuit blocks access to a column corresponding to the column address when the column address matches one of a plurality of particular column addresses designated for storage of metadata and the metadata enable signal has a first value, and permits access to a column corresponding to the column address when the column address is different than every one of the a plurality of particular column addresses designated for storage of metadata or the metadata enable signal has a second value.

Apparatuses, systems, and methods for separate write enable signals for granular single pass metadata access operations. During an example write operation a memory may receive data bits and at least one metadata bit. A set of bit lines in a first column plane is selected and a first write enable signal is provided which enables writing data to each of that set of bit lines. A second set of bit lines in a second column plane is selected and a second write enable signal is provided which enables writing the at least one metadata bit to a selected subset of the second set of bit lines.

Apparatuses, systems, and methods for separate write enable signals for granular single pass metadata access operations. During an example write operation a memory may receive data bits and at least one metadata bit. A set of bit lines in a first column plane is selected and a first write enable signal is provided which enables writing data to each of that set of bit lines. A second set of bit lines in a second column plane is selected and a second write enable signal is provided which enables writing the at least one metadata bit to a selected subset of the second set of bit lines.

A memory device is provided. The memory device includes a bottom electrode, a first data storage layer, a second data storage layer, an interfacial conductive layer and a top electrode. The first data storage layer is disposed on the bottom electrode and in contact with the bottom electrode. The second data storage layer is disposed over the first data storage layer. The interfacial conductive layer is disposed between the first data storage layer and the second data storage layer. The top electrode is disposed over the second data storage layer.

The present disclosure provides an earphone comprising a housing assembly, a speaker, and an ear hook assembly. The housing assembly includes a first accommodating cavity and a connecting portion that is provided with a socket extending along a first direction. The first accommodating cavity and a first channel and a second channel included in the socket are sequentially connected. A first abutment surface is disposed at transition between the first and second channels. The first abutment surface is inclined to the first direction. The ear hook assembly includes a first connecting end that includes a plug portion. The plug portion is inserted into the socket and includes a second abutment surface and an annular surface. The second abutment surface is inclined to the first direction and faces the first abutment surface. The annular surface extends from an inner edge of the second abutment surface toward the first abutment surface.

Apparatuses, systems, and methods for enhanced metadata information. The memory array includes a number of column planes and an extra column plane. A memory device is set in an x4 single-pass operational mode. In this mode, the memory may store a data codeword in a selected ones of the column planes, and metadata may be stored in a non-selected ones of the column planes and in the extra column plane. An error correction code circuit (ECC) may store parity bits associated with the data and metadata in the non-selected ones of the column planes. In this manner, the data, metadata, and parity may be accessed as part of a single access of the memory array.

Technology for reading memory cells in three-dimensional memory having multiple tiers. The memory system erases the tiers within each block independently. Then, memory cells in the tiers are programmed by units such as word lines. The memory system determines one or more read parameters for the selected tier based on the programmed / erased states of the other tiers in the block. For example, the memory system may select read reference levels for the selected tier based on the programmed / erased states of the other tiers. In an aspect, the one or more read parameters are used to determine the set of reference voltages for a bit error rate estimation scan (BES).

An acoustic output device is provided. The acoustic output device includes a housing; a bone conduction vibrator configured to generate bone conduction sound waves and transmit the bone conduction sound waves to a cochlea through the housing to produce sound; an air conduction vibrator configured to generate air conduction sound waves, the air conduction sound waves being transmitted to an ear through sound guiding holes in the housing; and a processing module configured to provide the bone conduction vibrator and the air conduction vibrator with a first audio signal and a second audio signal, respectively, the first audio signal and the second audio signal having a frequency division point, the first audio signal and the second audio signal including components with frequencies above and below the frequency division point, respectively. The frequency division point is not less than 600 Hz.

Apparatuses, systems, and methods for single-pass access of ECC information, metadata information, or combinations thereof. The memory array includes a number of column planes and an extra column plane. A memory device may be set in an ×4 single-pass operational mode. In this mode, the memory may store data in a selected ones of the column planes, and metadata may be stored in the extra column plane. An error correction code circuit (ECC) may store parity bits associated with the data and metadata in non-selected ones of the column planes. In this manner, the data, metadata, and parity may be accessed as part of a single access of the memory array.

The embodiment of the invention discloses an in-memory computing circuit based on a magnetic cache, and the circuit comprises at least one magnetic cache unit, at least one in-memory computing unit, and a timer. The magnetic cache unit in the at least one magnetic cache unit is used for caching data output by the corresponding in-memory computing unit as to-be-processed data within the corresponding data retention time; the timer is used for respectively setting data retention time for the at least one magnetic cache unit; and the in-memory computing unit in the at least one in-memory computing unit is used for extracting the data to be processed from the corresponding magnetic cache unit for calculation and outputting the computed data to other magnetic cache units. According to the embodiment of the invention, the invention achieves the flexible adjustment of the data retention time of the magnetic cache unit in various in-memory calculation scenes, and achieves the provision of a high-capacity cache for the data needed by in-memory computing under the lower power consumption.

Apparatuses and methods per row activation counter testing (PRACT). A memory includes an aggressor detector circuit, which determines a row address to be an aggressor address after the row address is accessed a number of times. In a normal mode the address is an aggressor after a first number of activations, while in a PRACT mode the address is an aggressor after a second (generally lower) number of activations. For example, when the row is accessed a first value may be added to a count in the normal mode and a second (generally larger) value in the PRACT mode. When the count crosses a threshold, the row is an aggressor.

The invention discloses a phase change memory and electronic equipment, the phase change memory comprises a comparator, a second switch, a third switch, a memory circuit, a selected digital line, a first switch and an unselected digital line, the memory circuit, the selected digital line, the first switch and the unselected digital line are connected in sequence, and the reference voltage of the unselected digital line is set in a reading operation through the first switch and the third switch; the reference voltage is in positive correlation with the second negative voltage, the second negative voltage is smaller than the first negative voltage, and compared with the reference voltage which is in positive correlation with the first negative voltage, the lower reference voltage can be generated, so that the overshoot current flowing through the memory cell at the opening moment is reduced, and the reading interference suffered by the memory cell is reduced.

The invention provides a mixed data precision matrix multiplication and addition unit and a calculation method, the matrix multiplication and addition unit comprises a calculation unit, and the calculation unit comprises a format division module, a multiplication array module, an addition tree module, an accumulator module, a normalization module and a shift register module. The calculation unit converts the first input matrix and the second input matrix into input data in a middle floating point format; executing parallel multiplication operation on the input data to generate an intermediate product result; performing index alignment and accumulation on the intermediate product result to generate an intermediate accumulated value; accumulating the intermediate product result and the value of the third input matrix in a form of accumulating an intermediate accumulated value, and outputting an accumulated result; and converting an accumulation result into a normalized result and outputting the normalized result. The format division module supports various precisions and converts data with different widths into an intermediate floating point format, so that other hardware units can be reused, and the problems that hardware resources are complex and different model reasoning scenes are difficult to meet are solved.

An example embodiment of the present invention provides a semiconductor device including: an encoder configured to receive a plurality of bit data by dividing the plurality of bit data into first group data and second group data, the plurality of bit data being divided into 2-bit units, to delay the second group data for a first period, and to output the first group data and the delayed second group data; and an output driver configured to output the first group data and the delayed second group data together to an external semiconductor device.

Apparatuses and methods for per-row count based refresh target identification with sorting. A memory includes a number of word lines each associated with a row address and a count value. A targeted refresh queue stores the highest count values and their row addresses as an ordered list. For example the list may be sorted from highest count value to lowest count value. During a targeted refresh operation, the row address at a top of the queue is used for refresh operations and removed from the queue. When a row and count value are added to the queue, the queue is re-sorted.

A method of fabricating a semiconductor device includes forming a memory cell array stack including a vertical stack of pad portions over a first substrate, forming first bonding pads each coupled to a different one of the pad portions in the vertical stack, forming control circuits including a plurality of sub-word line drivers over a second substrate, forming multi-layer level metal wiring coupled to the sub-word line drivers, forming second bonding pads coupled to the multi-layer level metal wiring, and performing a wafer bonding process for electrical coupling between the memory cell array stack and the control circuits.

A non-volatile memory device for performing compute in memory operations for a neural network uses a three dimensional NOR architecture in which vertical NOR strings are formed of multiple memory cells connected in parallel between a source line and a bit line. Weights of the neural network are encoded as threshold voltages of the memory cells and activations are encoded as word line voltages applied to the memory cells of the NOR strings. The memory cells are operated in the subthreshold region, where the word line voltages are below the threshold voltages. The NOR structure naturally sums the resultant subthreshold currents of the individual memory cells to generate the product of the activations and the weights of the neural network by concurrently applying input voltages to multiple memory cells of a NOR string.

Apparatuses, systems, and methods for refresh rate register adjustment based on a targeted refresh queue. A memory includes a temperature sensor which measures a temperature of the memory. The memory also includes a targeted refresh queue which stores identified aggressor addresses. A value of a refresh rate register is set based on both the measured temperature and the number of addresses in the queue. A controller of the memory reads the value of the refresh rate register and provides a refresh signal with timing based on the refresh rate register. In some embodiments, a ratio of targeted and normal refresh operations is adjusted based on how many addresses are in the targeted refresh queue.

A 3D semiconductor device including: a first level including a single crystal layer and a memory control circuit including first transistors and a redundancy control circuit; a first metal layer overlaying the single crystal layer; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; second transistors disposed atop the third metal layer with at least one including a metal gate; third transistors disposed atop the second transistors; a fourth metal layer atop the third transistors; a memory array including word-lines and at least four memory mini arrays, each including at least four rows by four columns of memory cells, each of the memory cells includes at least one of the second transistors or at least one of the third transistors; a connection path from the fourth metal to the third metal including a via disposed through the memory array.

A receiver circuit is configured to generate a reception symbol from a multi-level signal. The receiver circuit is configured to generate three compensation signal pairs from an input signal pair to perform a loop unrolled decision feedback equalization operation. A first summing circuit is configured to equalize the input signal pair with a first offset to generate a first compensation signal pair, and a second summing circuit is configured to equalize the input signal pair with a second offset to generate a second compensation signal pair. An averaging circuit is configured to average the first compensation signal pair and the second compensation signal pair to generate a third compensation signal pair.

Technology is disclosed for reading memory cells having threshold switching selectors. A sense amplifier may have a set of capacitors that may be used to exchange charge with a sense node connected to the selected word line. A capacitor may be used to pull excess charge from the sense node or to provide charge to the sense node. A control circuit drives a current to the selected word line to charge up the selected word line to switch on the threshold switching selector of the selected memory cell. A capacitor may be connected to the selected word line when, or soon after, the threshold switching selector switches on. The capacitor may draw away excess charge to prevent a snapback current from flowing through the memory cell thereby preventing mis-reads. The capacitor may reduce read latency by speeding the rate of voltage change on a word line.

Three-dimensional (3D) DRAM integrated in the same package as compute logic enable forming high-density caches. In one example, an integrated 3D DRAM includes a large on-de cache (such as a level 4 (L4) cache), a large on-die memory-side cache, or both an L4 cache and a memory-side cache. One or more tag caches cache recently accessed tags from the L4 cache, the memory-side cache, or both. A cache controller in the compute logic is to receive a request from one of the processor cores to access an address and compare tags in the tag cache with the address. In response to a hit in the tag cache, the cache controller accesses data from the cache at a location indicated by an entry in the tag cache, without performing a tag lookup in the cache.

The invention discloses an in-memory computing array and an operation method thereof, and belongs to the technical field of semiconductors and CMOS hybrid integrated circuits. A 2T1R in-memory computing array based on subthreshold current is designed, each unit in the array is composed of a memristor, a gate tube T1 and a reading tube T2, write-in and erase operations are similar to a 1T1R array architecture, but read-out is carried out through the transistor T2 working in a subthreshold region, the reading current generated by the reading tube is small, and the read-in and erase operations can be carried out through the memristor, the gate tube T1 and the reading tube T2. And the parallelism degree of in-memory calculation is increased, and ultrahigh parallel calculation of 100-1000 orders of magnitude can be realized. And meanwhile, the reading current of the reading tube T2 is in exponential correlation with the gate voltage, so that a larger switching current ratio can be obtained, and a reading window of the in-memory calculation unit is amplified. Compared with a 1T1R array architecture, more complex in-memory calculation operation can be realized, and an operation strategy can be flexibly selected, so that more efficient multiply-accumulate operation is realized.

The present invention relates to a reconfigurable logic-in-memory cell consisting of triple-gate feedback memory elements. The reconfigurable logic-in-memory cell according to one embodiment of the present invention includes a plurality of triple-gate feedback memory elements including a drain region, a channel region, a source region, and a gate region where first and second programming gate electrodes and a control gate electrode are formed on the channel region.

A ZQ calibration circuit included in a semiconductor memory device includes a reference voltage selector configured to output a reference voltage selected from among a first reference voltage and a second reference voltage generated based on a first supply voltage and a second supply voltage, in response to a selection signal, a ZQ engine configured to generate a pull-up code and a pull-down code based on the selected reference voltage, and a loop selector configured to output the selection signal according to whether each of the pull-up code and the pull-down code is toggled. Levels of the first and second reference voltages are different from each other, smaller than a level of the first supply voltage, and greater than a level of the second supply voltage.

In an implementation, a device includes: a first inverter; a first sense amplifier connected to the first inverter; a first match line connected to the first sense amplifier; a first analog content addressable memory cell including: a first pull-down transistor; a second pull-down transistor, the first pull-down transistor and the second pull-down transistor being connected in series between the first match line and a reference node; a first memory circuit configured to store a first upper bound of a first range and to activate the first pull-down transistor when an analog input value is less than the first upper bound of the first range; and a second memory circuit configured to store a first lower bound of the first range and to activate the second pull-down transistor when the analog input value is greater than the first lower bound of the first range.