The invention belongs to the field of
semiconductor integrated circuits, and specifically relates to a tunneling
field effect device for
channel potential barrier height control. The center of the device is provided with a channel, two ends of the channel are provided with a source terminal and a drain terminal of different conductive types, a tunneling junction is formed between the source terminal and the channel, the channel is formed by the adoption of three or more than three potential barrier areas, the energy band of the potential barrier area at the middle section is higher than the energy bands of the channel close to the drain terminal and the source terminal, the device also comprises a
gate oxide layer fully covering the channel, and the
gate oxide layer is fully covered by a gate
electrode. The portion of the channel of the device employs materials of different
doping concentrations or types, and three sections or more sections of the potential barrier structures are formed in the channel. According to the
simulation research result of the tunneling device structure for
channel potential barrier height control, the off-state leakage current of the device can be effectively reduced, the sub-threshold slope is reduced, the short-channel effect and the DIBL effect are suppressed, the
transconductance characteristic is good, and comprehensive optimization of the performance of the device is realized.