The invention relates to an RTP
pretreatment method for the minority
carrier lifetime of a
silicon wafer, which belongs to the technical field of
silicon wafer processing, and comprises the following operation steps: 1, carrying out pretreatment preparation for cleaning the
silicon wafer, and blow-
drying the cleaned silicon wafer through
nitrogen; secondly, RTP module parameters are set and debugged, and an integrated high-purity heat treatment cavity is adopted in an RTP module; and thirdly, RTP
passivation treatment is carried out. 4, performing double-sided charge deposition treatment; a
corona charge deposition device is adopted, negative charges are deposited on the front face and the back face of the silicon wafer respectively, and the
charge density is controlled to range from-1500 nC / cm to 2000 nC / cm. 5, detecting connection and
system control; after charge deposition is completed, the silicon wafer is directly transferred to mu-PCD detection equipment, the
oxide layer continuously anchors
surface charges in the detection process, and the
passivation effect is maintained. By performing high-quality
passivation on the surface of the silicon wafer, the influence of surface recombination on minority
carrier lifetime measurement is eliminated to the greatest extent, so that the body lifetime of the silicon material is accurately reflected.