The invention discloses an S-type
heterojunction Bi2Sn2O7 / Bi4O5I2 composite photocatalyst and a preparation method thereof, the in-situ composite Bi2Sn2O7 / Bi4O5I2 composite photocatalyst is obtained through the preparation steps of magnetic stirring,
hydrothermal treatment, centrifugal washing and the like, and the in-situ composite Bi2Sn2O7 / Bi4O5I2 composite photocatalyst is applied to a photocatalytic
water treatment method to achieve efficient removal of pollutants. According to the Bi2Sn2O7 / Bi4O5I2 composite photocatalyst prepared by the preparation method disclosed by the invention, an inner
electric field is formed through the construction of an S-type
heterojunction between Bi2Sn2O7 and Bi4O5I2, an excitation transmission path of photogenerated electrons is changed under the action of the inner
electric field, migration and conversion of photogenerated charges are promoted, and then compounding of
photogenerated electron-hole pairs is inhibited. It is worthy of noting that the discrete
heterojunction of the Bi2Sn2O7
quantum dot modified Bi4O5I2 hollow
nanotube is designed and constructed, and separation and axial transportation of photo-generated charges can be achieved. The discrete structure is beneficial to spatial separation of
redox reaction sites, is also beneficial to separation of photogenerated charges, and is an ideal strategy for improving the
charge separation efficiency and photocatalytic activity of the
semiconductor material. The apparent rate constant k and the rate constant (0.3463 min <-1 >) of the Bi2Sn2O7 / Bi4O5I2 heterojunction, which are obtained according to a fitting quasi-first-order kinetic equation, are 1.9 times and 58.7 times of those of a Bi4O5I2 hollow
nanotube (k is equal to 0.1792 min <-1 >) and a Bi2Sn2O7
quantum dot (k is equal to 0.0059 min <-1 >) respectively. The invention provides a feasible method for preparing a high-performance photocatalyst, and provides a new idea for the design of heterojunction.