26737 results about "Electric charge" patented technology

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers functions as gate electrodes of the memory cells.

The invention relates to electro-optic displays and methods for driving such displays. The invention provides (i) electrochromic displays with solid charge transport layers; (ii) apparatus and methods for improving the contrast and reducing the cost of electrochromic displays; (iii) apparatus and methods for sealing electrochromic displays from the outside environment and preventing ingress of contaminants into such a display; and (iv) methods for adjusting the driving of electro-optic displays to allow for environmental and operating parameters.

A battery-powered, modular surgical device comprising an electrically powered surgical instrument that requires a pre-determined minimum amount of electrical energy to complete a surgical procedure, and a power module assembly that has a battery that powers the surgical instrument and has a current state of electrical charge, and a control circuit that is electrically coupled to the battery and the surgical instrument and has a memory and a microprocessor. The microprocessor determines the current state of electrical charge of the battery, compares the current state of electrical charge to the pre-determined minimum amount of electrical energy, permits the battery to discharge if the current state of electrical charge is above the pre-determined minimum amount of electrical energy, and maintains the battery in a non-discharge state if the current state of electrical charge is below the pre-determined minimum amount of electrical energy.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

An arrangement is provided for charging a charge storage device by placing the charge storage device in an RF or microwave radiation field. One or more antennas which receive the radiated RF electromagnetic field are placed on the charge storage device. Rectifiers connected to the antennas rectify the received RF electromagnetic field an produce a DC output current which is used to charge the charge storage device. The charge storage device may be a battery or a capacitor and may form an integral part of an electronic device. The same RF field that charges the charge storage device can also be employed to communicate data to transponders which may be associated with computing devices.

A semiconductor memory capable of increasing bit density by three-dimensional arrangement of cells and a method for manufacturing the same are provided.In a semiconductor memory 1, gate electrode films 21 are provided on a silicon substrate 11. The gate electrode films 21 are arranged in one direction parallel to the upper surface of the silicon substrate 11 (X direction). Each gate electrode film 21 has a lattice plate-like shape, having through holes 22 in a matrix form as viewed in the X direction. Silicon beams 23 are provided passing through the through holes 22 of the gate electrode films 21 and extending in the X direction. Further, an ONO film 24 including a charge storage layer is provided between the gate electrode film 21 and the silicon beam 23.

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand, proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand. The current has characteristics representative of the component of the polymer, such as characteristics representative of the detected base of the DNA or RNA strand.

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and / or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°. At least one of the two edges has a transparent portion. the devices according to the present invention can be arranged in arrays.

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

A water soluble semiconductor nanocrystal capable of light emission is provided, including a quantum dot having a selected band gap energy, a layer overcoating the quantum dot, the overcoating layer comprised of a material having a band gap energy greater than that of the quantum dot, and an organic outer layer, the organic layer comprising a compound having a least one linking group for attachment of the compound to the overcoating layer and at least one hydrophilic group space apart from the linking group by a hydrophobic region sufficient to prevent electron charge transfer across the hydrophobic region. The particle size of the nanocrystal core is in the range of about 12.ANG. to about 150.ANG., with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescende having quantum yield of greater than 10% in water.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

Provided are organic n-doped electron transport layers comprising at least one electron transport material and at least one electron rich dopant material and organic p-doped hole transport layers comprising at least one hole transport material and at least one electron deficient dopant material.

The present invention provides wireless power supply systems that wirelessly supply power to a remote device for rapidly charging a charge storage capacitor, which charges a battery with the power stored in the charge storage capacitor. This allows the remote device to be positioned near the inductive power supply for rapid charging of the charge storage capacitor and allows battery charging to continue even after the remote device is removed from the inductive power supply.

A semiconductor device includes a semiconductor structure having a first sidewall. A vertical channel region is formed in the semiconductor structure along the first sidewall between a first current electrode region and a second current electrode region. First and second charge storage structures are formed adjacent to the first sidewall in openings of a dielectric layer. The first and second charge storage structures are electrically isolated from each other and from the semiconductor structure. A control electrode is formed adjacent to the first sidewall. In another embodiment, third and fourth charge storage structures may be formed adjacent to a second sidewall of the semiconductor structure in openings of a dielectric layer.

A phenylcarbazole-based compound is represented by Formula 1, and has superior electric properties and charge transport abilities, and thus is useful as a hole injection material, a hole transport material, and / or an emitting material which is suitable for fluorescent and phosphorescent devices of all colors, including red, green, blue, and white colors. The phenylcarbazole-based compound is synthesized by reacting carbazole with diamine. The organic electroluminescent device manufactured using the phenylcarbazole-based compound has high efficiency, low voltage, high luminance, and a long lifespan.

A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

The present invention is a multibit nonvolatile memory and its method of fabrication. According to the present invention a silicon channel body having a first and second channel surface is formed. A charge storage medium is formed adjacent to the first channel surface and a second charge storage medium is formed adjacent to the second channel surface. A first control gate is formed adjacent to the first charge storage medium adjacent to the first channel surface and a second control gate is formed adjacent to the second charge storage medium adjacent to the second surface.

A distance image sensor for removing the background light and improving the charge transfer efficiency in a device for measuring the distance to an object by measuring the time-of-flight of the light.In a distance image sensor for determining the signals of two charge storage nodes which depend on the delay time of the modulated light, a signal by the background light is received from the third charge storage node or the two charge storage nodes in a period when the modulated light does not exist, and is subtracted from the signal which depends on the delay time of the two charge storage nodes, so as to remove the influence of the background. Also by using a buried diode as a photo-detector, and using an MOS gate as gate means, the charge transfer efficiency improves. The charge transfer efficiency is also improved by using a negative feedback amplifier where a capacitor is disposed between the input and output.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

This invention relates to an apparatus and method for making such apparatus for providing controlled and directional stimulation patterns for tissue stimulation. The apparatus may be useful in stimulation nervous tissue in the brain, about the spinal cord, on nerve roots, about peripheral nerves, and in muscles, among others. The apparatus includes a implantable pulse generator connected to a lead. The lead has electrodes placed about a perimeter. In addition, the lead may include electrodes placed longitudinally along the axis of the lead. By applying charge differences between circumferentially distributed electrodes, a smaller stimulation field may be established. In addition, by stimulating between electrodes distributed longitudinally on the same side, a directional flow field may be established. Such leads are especially useful in deep brain stimulation as the region in which a stimulation field is strong enough to produce tissue stimulation is directional and minimized.

A device and method for spatially resolved photodetection and demodulation of temporally modulated electromagnetic waves makes it possible to measure phase, amplitude and offset of a temporally modulated, spatially coded radiation field. A micro-optical element (41) spatially averages a portion (30) of the scene and equally distributes the averaged intensity on two photo sites (51.1.51.2) close to each other. Adjacent to each of these photo sites (51.1) are two storage areas (54.1, 54.2) into which charge from the photo site can be moved quickly (with a speed of several MHz to several tens or even hundreds of MHz) and accumulated essentially free of noise. This is possible by employing the charge-coupled device (CCD) principle. The device combines a high optical fill factor, insensitivity to offset errors, high sensitivity even with little light, simultaneous data acquisition, small pixel size, and maximum efficiency in use of available signal photons for sinusoidal as well as pulsed radiation signals. The device and method may be used in a time-of-flight (TOF) range imaging system without moving parts, offering 2D or 3D range data.