11 results about "Electron" patented technology

The invention discloses a forming method of a flash memory unit. The forming method comprises the following steps: providing a semiconductor substrate; forming a tunneling oxide layer on the semiconductor substrate; forming nanocrystalline silicon particles on the tunneling oxide layer; forming an isolation insulating layer on the tunneling oxide layer and the nanocrystalline silicon particles; and forming a control grid on the isolation insulating layer, wherein the step of forming the nanocrystalline silicon particles on the tunneling oxide layer comprises: forming an amorphous silicon layer on the tunneling oxide layer; and performing repeated seed crystal particle forming processes on the amorphous silicon layer, wherein surface annealing treatment is performed between two adjacent seed crystal particle forming processes, and an annealing process is performed after the last seed crystal particle forming process. The flash memory unit can be used for storing a large quantity of electrons, and has high performance.

The present application relates to a method and to a device for setting an electrostatic charge of a sample. The method comprises the following steps: (a) adjusting at least one parameter of at least one particle beam such that, on average, each particle, incident on the sample, of the at least one particle beam releases a predefined average number of electrons from the sample; and (b) irradiating the sample with the at least one adjusted particle beam in order to set the electrostatic charge of the sample.

This invention provides a method and apparatus for determining the ground state energy of a target molecular system. The method includes: determining a first Hamiltonian of the target molecular system using the Born-Oppenheimer approximation; determining a first correction term using a preset perturbation expansion based on a preset mass ratio parameter of electrons to atomic nuclei in the target molecular system and the first Hamiltonian; applying the first correction term to the first Hamiltonian to obtain a second Hamiltonian; and determining the ground state energy corresponding to the second Hamiltonian based on the second Hamiltonian and a preset variable quantum circuit.

A method for determining the position (zk) or radioactive activity of gamma ray sources (Pk) of an object, wherein: b) interaction data, or 'electron recoil's, are acquired with a Compton camera during movement of the object; c) these electron recoil's (REi) are grouped into groups (Gj) relative to the same gamma ray; e) for each group and each possible sequence (Sjk) of electron recoil's in the group, a Compton cone (CCjk) is constructed and its intersections (Pjkl) with the object's axis (z) are calculated; f) for each group, for each possible sequence (Sjk) of electron recoil's, a weighted fraction (Rjkl) of gamma ray emitted for each intersection is estimated; g) from the weighted fractions, a radiation curve (CR) representing the activity density of the sources is established; h) their position or activity is determined from the radiation curve. Figure for the summary: Figure 6A

The invention relates to a method for determining the position (zk) or radioactivity of gamma sources (Pk) of an object, wherein: b) interaction data, or 'electron recoils', are acquired with a Compton camera during a movement of the object; c) the electron recoils (REi) are grouped into groups (Gj) relating to a given gamma ray; e) for each group and each possible sequence (Sjk) of electron recoils of the group, a Compton cone (CCjk) is constructed and its intersections (Pjkl) with the axis of the object (z) are calculated; f) for each group, for each possible sequence (Sjk) of electron recoils, a weighted fraction (Rjkl) of gamma rays emitted for each intersection is estimated; g) from the weighted fractions, a radiation curve (CR) representing the activity density of the sources is established; h) their position or their activity is determined from the radiation curve.

The embodiment of the invention relates to a method and device for determining quantum system state representation, equipment and a storage medium. The method proposed herein comprises: determining a first spatial feature representation of the quantum system, the first spatial feature representation indicating a spatial distribution of a plurality of electrons in the quantum system; determining a spin feature representation of the quantum system, the spin feature representation indicating a spin state of the plurality of electrons in the quantum system at a predetermined total spin state; and determining a system state representation of the quantum system based at least on a combination of the first spatial feature representation and the spin feature representation.

The invention relates to the technical field of tests and tests, in particular to a method for detecting the depth of a chromium-poor layer of a GH3030 alloy and a method for evaluating the quality of a part. The detection method comprises the following steps: S1, preparing a sample: cutting a GH3030 alloy sample, and performing embedding, grinding and polishing, cleaning and drying treatment; s2, scanning electron microscope observation: placing the sample in a scanning electron microscope, setting an electron high voltage and a central diaphragm, adopting a back scattering electron probe for imaging, and setting an amplification factor; s3, energy spectrum signal calibration: adjusting the height of the sample to enable the input counting rate to meet a preset threshold value; s4, central chromium content determination: performing multi-point energy spectrum analysis in the central area of the sample, and calculating the average content M of the chromium element; s5, performing energy spectrum analysis point by point along the normal direction perpendicular to the surface, and recording the chromium content Ni of each point and the distance di from the point to the surface; and S6, calculating the depth d: taking the position where the chromium content is greater than or equal to M for the first time as an end point, and calculating the depth d of the chromium-poor layer according to chromium content mutation point interpolation.

The invention discloses a characteristic line determination theory electron transport calculation method based on continuous moderation approximation, and belongs to the technical field of radiation transport calculation and nuclear engineering numerical analysis. The method comprises the following steps of: depicting an electron transport process by adopting an electron transport equation containing a continuous moderated approximation operator; enabling a continuous moderated approximation operator to be equivalent to an energy group shift-out item and a lower scattering source item through rhombus difference approximation in an energy dimension, thereby reconstructing an electron transport equation into a standard multi-group Boltzmann transport equation form; and constructing multi-group pseudo cross-section data based on a discrete result, introducing an existing neutral particle characteristic line method solving framework, and realizing deterministic theory calculation of electron transport on the premise of not changing a solver core algorithm. Statistical noise of a Monte Carlo method is avoided, a mature solver can be directly reused to complete electronic transport calculation, and compared with a mainstream discrete longitudinal standard method, the method is more suitable for engineering calculation under complex geometric conditions and is easy to integrate with an existing transport analysis process.

A solution for quantum embedding is provided. The method includes: determining a first cluster set for at least a first portion of the electrons by decomposing the electrons based on information about the electrons of a material system; determining a second cluster set for at least a second portion of the electrons based on the first cluster set and perturbation triple excitations for at least a second portion of the electrons; and obtaining a target physical property for the material system based at least on the first cluster set and the second cluster set.

To provide an evaluation method capable of evaluating the density of a sample.SOLUTION: An analysis method according to the present invention includes a step of acquiring a backscattered electron spectrum of a sample, a step of performing waveform separation on an elastic scattering peak of the backscattered electron spectrum to separate the elastic scattering peak into a plurality of peaks and acquiring information on a position of each peak, a width of each peak, and an intensity of each peak, a step of specifying each element constituting the sample from the position of each peak and the width of each peak, and a step of obtaining a density of each element constituting the sample from the intensity of each peak.SELECTED DRAWING: Figure 2

There is provided a solution for quantum embedding. A method includes: determining a first set of clusters for at least a first portion of electrons of a material system by decomposing the electrons based on information about the electrons; determining a second set of clusters for at least a second portion of the electrons based on the first set of clusters and perturbative triple excitations for the second portion of the electrons; and obtaining a target physical property for the material system at least based on the first set of clusters and the second set of clusters.