3results about How to "Improve component performance" patented technology

The invention relates to the technical field of metal component forming and manufacturing, in particular to a real-time lubricating liquid supplementing incremental forming tool which comprises a mirror image forming machining system, a six-degree-of-freedom mechanical arm, a forming loading tool head and a flange plate rotating chuck. The forming loading tool head comprises a spherical ball head cutter, a clamping outer sleeve, a conducting inner sleeve and a detachable fixing sleeve; the clamping outer sleeve is fixed on a flange plate rotating chuck of the mechanical arm to support the forming loading tool to work; the starting end of the inner sleeve is connected with an oil conveying pipe; the detachable fixing sleeve is used for fixing the spherical ball head cutter and conducting a lubricating oil path; and the spherical ball head cutter is subjected to forming loading under the lubrication effect. The method comprises the steps of tool positioning, blank hot forming and aging treatment of a preformed part, finally, a metal forming component is obtained, and the problems that in the prior art, when thin-wall metal plate complex local small feature forming is conducted, precision is low, a tool bit is prone to damage, collapse and cracking are prone to occurring, and the structure property is uncontrollable are solved.

The present disclosure provides a semiconductor device without voids in a contact and a method of making the semiconductor device. The semiconductor device includes a source / drain structure disposed on a semiconductor substrate, a dielectric layer disposed on the source / drain structure, and a conductive contact through the dielectric layer and the source / drain structure. The conductive contact includes a conductive layer and a barrier layer covering a sidewall and an undersurface of the conductive layer, and wherein a first thickness of the barrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the undersurface of the conductive layer.