6results about How to "Improve component performance" patented technology

The invention relates to the technical field of metal component forming and manufacturing, in particular to a real-time lubricating liquid supplementing incremental forming tool which comprises a mirror image forming machining system, a six-degree-of-freedom mechanical arm, a forming loading tool head and a flange plate rotating chuck. The forming loading tool head comprises a spherical ball head cutter, a clamping outer sleeve, a conducting inner sleeve and a detachable fixing sleeve; the clamping outer sleeve is fixed on a flange plate rotating chuck of the mechanical arm to support the forming loading tool to work; the starting end of the inner sleeve is connected with an oil conveying pipe; the detachable fixing sleeve is used for fixing the spherical ball head cutter and conducting a lubricating oil path; and the spherical ball head cutter is subjected to forming loading under the lubrication effect. The method comprises the steps of tool positioning, blank hot forming and aging treatment of a preformed part, finally, a metal forming component is obtained, and the problems that in the prior art, when thin-wall metal plate complex local small feature forming is conducted, precision is low, a tool bit is prone to damage, collapse and cracking are prone to occurring, and the structure property is uncontrollable are solved.

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a metal gate structure, at least one dummy body, two source / drain regions and a dielectric layer. The metal gate structure is disposed on the substrate. The at least one dummy body is disposed in the metal gate structure. The two source / drain regions are disposed in the substrate on both sides of the metal gate structure. The dielectric layer is disposed on the substrate and surrounds the metal gate structure.

The utility model discloses a semiconductor device which comprises a substrate, a plurality of plug structures, a plurality of gate line structures, a metal silicide layer, a plurality of bonding pads and a plurality of bonding pad intervals. The plug structures and the gate line structures are alternately disposed on the substrate. A metal silicide layer is disposed on and physically contacts the plug structure. A pad is disposed on the metal silicide layer and physically contacts the metal silicide layer. And the bonding pads are arranged between the bonding pads at intervals and are in physical contact with the plug structure and the side wall of the metal silicide layer. Therefore, the semiconductor device has more optimized component structure and efficiency, thereby improving operation performance.

The present disclosure provides a semiconductor device without voids in a contact and a method of making the semiconductor device. The semiconductor device includes a source / drain structure disposed on a semiconductor substrate, a dielectric layer disposed on the source / drain structure, and a conductive contact through the dielectric layer and the source / drain structure. The conductive contact includes a conductive layer and a barrier layer covering a sidewall and an undersurface of the conductive layer, and wherein a first thickness of the barrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the undersurface of the conductive layer.