Low temperature polycrystalline silicon thin film transistor and manufacturing method therefor

Abstract

The invention relates to a low temperature polycrystalline silicon thin film transistor and a manufacturing method therefor. A conductive buffer cushion is arranged in a source electrode region and a drain electrode region for preventing the polycrystalline silicon in a contact hole from being etched; and the electrical conductivity among the polycrystalline silicon layer, the source electrode and the drain electrode is improved so as to reduce contact resistance and improve the assembly performance of the polycrystalline silicon thin film transistor.

Description

【Technical field】 [0001] The invention relates to a manufacturing method of a thin film transistor, and in particular to a low-temperature polysilicon thin film transistor and a manufacturing method thereof. 【Background technique】 [0002] With the development of semiconductor technology, video products, especially digital video or image devices have become common products in daily life. In these digital video or image devices, the display is an important component to display relevant information. Low-temperature polysilicon thin-film transistors (LTPSTFT) can be applied to the driving components of liquid crystal displays, making this product the mainstream of displays, and will become a future dominant product in markets such as personal computers, game consoles, and monitors. [0003] In the process structure of low-temperature polysilicon thin-film transistor (LTPSTFT) liquid crystal display panel, during the production process of inter-layer dielectric layer (inter-lay...

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Problems solved by technology

The etching process of the interlayer dielectric layer 110 will directly etch to the polysilicon film layer, resulting in the loss of the polysilicon film; at the same time, the bottom area of ​​the via hole 114 of the interlayer dielectric layer 110 and the polysilicon film are in metal contact with the source electrode / drain electrode 112 The area is small, and the metal contact resistance between the polysilicon film and the source electrode / drain electrode 112 is relatively large

[0005] Therefore need to develop a kind of manufacturing method of novel low-temperature polysilicon thin-film transistor, to solve the problem that the contact area between the above-mentioned polysilicon layer and source electrode / drain electrode is too small, causes contact resistance too large

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