29976 results about "Quartz" patented technology

The object of this invention is to prevent surface discharge even when a high voltage is applied in a dielectric-barrier discharge lamp or a capacitively coupled high frequency discharge lamp with no electrodes in a discharge space. Ribbon foil electrodes 3 are embedded in the wall of a quartz discharge vessel 1. The discharge vessel 1 is disposed such that the foil electrodes 3 face each other on both sides of the axis of the quartz discharge vessel 1. It may be disposed such that the foil electrodes 3 have a truncated V-shaped cross-section. The single tube quartz discharge vessel 1 is filled with discharge gas to form excimer molecules by dielectric barrier discharge or capacitively coupled high-frequency discharge.

A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma. In a more limited embodiment, the first plasma passageway (86) is constructed from quartz (SiO.sub.2) and the second plasma passageway is (88) constructed from alumina (Al.sub.2 O.sub.3) or single crystal alumina (sapphire).

A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y₂O₃ coating. The Y₂O₃ coating is a thin film formed using suitable CVD or PVD operations. The Y₂O₃ coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl₄vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl₄ vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.

A substrate processing apparatus stably and efficiently conducts a film forming process on a substrate to be processed. In the substrate processing apparatus, the substrate to be processed is supported at a position facing a heater portion, and a holding member for holding the substrate is rotated, whereby the temperature distribution of the substrate is kept uniform and a warp of the substrate is suppressed. The inner wall of the processing vessel is covered with a quartz liner which is made of opaque quartz, and thus protected from ultraviolet rays emitted from an ultraviolet light source. The temperature rise of the inner wall caused by heat from the heater portion is suppressed due to the heat insulating effect of the quartz liner. Consequently, the life cycle of the processing vessel can be prolonged.

This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO₂ or SiN surface having TiN thereon is contacted with XeF₂ in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF₂ can be preformed or formed in situ by reaction between Xe and a fluorine compound.

Improved long gas injectors for a vertical furnace used in semiconductor wafer processing are useful to minimize particulate contamination in the wafer processing area of the furnace, and minimize distortion of the long injectors during thermal excursions. The improved injectors are fabricated with a stabilizing quartz standoff positioned near the onset of the vertical portion of the injector tube which adds support to the long tube. Thickness of the standoff is calculated to define and enforce a specified separation distance between liner and injector, as well as to provide dual alignment points at the base of the liner and at the tip of the injector.

Disclosed herein are surface coatings for plasma components that have the benefit of being robust against chemical and plasma physical attack in aggressive (e.g., fluorine-based) plasma environments. The coatings also provide low plasma surface recombination rates for active oxygen, nitrogen, fluorine, and hydrogen species when compared with other known surface treatments. The coatings can be applied to any plasma system component not requiring etching or plasma cleaning including but not limited to materials like quartz, aluminum, or anodized aluminum. Additionally, the efficiency of the system is increased by applying a non-reactive coating to system components thereby increasing the flow of excited plasma species to the plasma chamber of the system.

A baffled liner cover supported at the top of a liner surrounding a wafer support tower for semiconductor thermal processing. The cover may present a continuous horizontal surface for preventing particles from falling within the liner but present horizontal extending gas passageways in a baffle assembly to allow the flow of processing gas through the cover. In one embodiment, the baffle assembly includes a cup-shaped member disposed in a central aperture of a top plate having an open top, a continuous bottom, horizontal holes through the sides, and a flange around sides defining a convolute annular passage. Alternatively, the planar top plate may included slanted holes therethrough or vertical holes occupying a small fraction of the surface area. The liner and cover may be composed of quartz, silicon carbide, or preferably silicon.

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Gas distribution assemblies and processing chambers using same are described. The gas distribution assemblies comprise a cooling plate with a quartz puck, a plurality of reactive gas sectors and a plurality of purge gas sectors suspended therefrom. The reactive gas sectors and purge gas sectors having a coaxial gas inlet with inner tubes and outer tubes, the inner tubes and outer tubes in fluid communication with different gas or vacuum ports in the front faces of the sectors. The sectors may be suspended from the cooling plate by a plurality of suspension rods comprising a metal rod body with an enlarged lower end positioned within a quartz frame with a silicon washer around the enlarged lower end.

An apparatus and method for ultraviolet irradiation of air for the purpose of removing contaminants from that air is disclosed. A U-shaped ultraviolet bulb enshrouded within a quartz tube provides enhanced contaminant destruction characteristics. By combining a plurality of those bulbs in a chamber that is of polished aluminum, and further combining aluminum filters therewith, added irradiation enhancement is achieved. Further provided are baffles or baffling proximate the ultraviolet bulbs that cause the air to go turbulent thus drawing the air closer to the ultraviolet bulb and further enhancing the contaminant destruction characteristics. Moreover disclosed is treatment of substrates with a chemical agent that facilitates the arrest of contaminants from the air onto the substrate for further irradiation of the contaminants from the bulbs. This further irradiation breaks down the arrested contaminants thus providing the substrate with a self-cleansing effect.

A method of making an optical fiber precursor includes generating vapors from an alkali metal source comprising compound containing oxygen and one or more alkali metals and applying the vapors to a surface of a glass article comprising silica at a temperature that promotes diffusion of the alkali metal into the surface of the glass article. An optical fiber has a core comprising silica and an alkali metal oxide of the form X₂O, where X is selected from the group consisting of K, Na, Li, Cs, and Rb, wherein a concentration of the alkali metal oxide along a length of the core is uniform.

A quartz jig of this invention is such as being provided inside a semiconductor manufacturing apparatus allowing therein growth of an epitaxial layer on a main surface of a semiconductor wafer, capable of supporting a soaking jig which keeps, during epitaxial growth, uniform temperature of a susceptor allowing thereon placement of the semiconductor wafer, and has the top surface thereof aligned almost at the same level of height with the top surface of the susceptor, and is characterized as being composed of transparent quartz at least in a portion thereof brought into contact with the soaking jig. This configuration successfully provides a quartz jig supporting the soaking jig in the semiconductor manufacturing apparatus while suppressing generation of particles, and a semiconductor manufacturing apparatus provided with this sort of quartz jig.

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal/mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

PCT No. PCT/US97/04398 Sec. 371 Date Sep. 18, 1998 Sec. 102(e) Date Sep. 18, 1998 PCT Filed Mar. 19, 1997 PCT Pub. No. WO97/35176 PCT Pub. Date Sep. 25, 1997Improvements in a biosensor of the type having reservoirs or wells for analyzing a biological liquid are disclosed. A biosensor (190) includes a waveguide (164) placed between a plurality of members such as plates (100, 186), at least one of the members (100) being formed to define the walls (132, 134, 136) of the reservoirs where the liquid is biologically analyzed. The walls of the reservoirs are made of an inert, opaque material such as a metal. Although the biosensor may include a gasket (162), the gasket is associated with the members and waveguide in such a way (e.g. by recessing the gasket into a channel formed into a metal plate) so that the gasket does not form any significant portion of the reservoir wall. Waveguides of varying composition (e.g. plastic, quartz or glass) may be associated with the members to form the biosensor. The metal plate of the biosensor has input and output ports for infusing, draining, or oscillating the liquid to be analyzed in the reaction reservoir. Also disclosed is a sled-shaped waveguide associated with a rear lens to couple light out of the waveguide to serve as a quality control measure thus insuring that the biosensor is properly placed and that the light is working.