13646 results about "Quartz" patented technology

The object of this invention is to prevent surface discharge even when a high voltage is applied in a dielectric-barrier discharge lamp or a capacitively coupled high frequency discharge lamp with no electrodes in a discharge space. Ribbon foil electrodes 3 are embedded in the wall of a quartz discharge vessel 1. The discharge vessel 1 is disposed such that the foil electrodes 3 face each other on both sides of the axis of the quartz discharge vessel 1. It may be disposed such that the foil electrodes 3 have a truncated V-shaped cross-section. The single tube quartz discharge vessel 1 is filled with discharge gas to form excimer molecules by dielectric barrier discharge or capacitively coupled high-frequency discharge.

A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma. In a more limited embodiment, the first plasma passageway (86) is constructed from quartz (SiO.sub.2) and the second plasma passageway is (88) constructed from alumina (Al.sub.2 O.sub.3) or single crystal alumina (sapphire).

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl₄vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl₄ vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.

A substrate processing apparatus stably and efficiently conducts a film forming process on a substrate to be processed. In the substrate processing apparatus, the substrate to be processed is supported at a position facing a heater portion, and a holding member for holding the substrate is rotated, whereby the temperature distribution of the substrate is kept uniform and a warp of the substrate is suppressed. The inner wall of the processing vessel is covered with a quartz liner which is made of opaque quartz, and thus protected from ultraviolet rays emitted from an ultraviolet light source. The temperature rise of the inner wall caused by heat from the heater portion is suppressed due to the heat insulating effect of the quartz liner. Consequently, the life cycle of the processing vessel can be prolonged.

This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO₂ or SiN surface having TiN thereon is contacted with XeF₂ in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF₂ can be preformed or formed in situ by reaction between Xe and a fluorine compound.

Improved long gas injectors for a vertical furnace used in semiconductor wafer processing are useful to minimize particulate contamination in the wafer processing area of the furnace, and minimize distortion of the long injectors during thermal excursions. The improved injectors are fabricated with a stabilizing quartz standoff positioned near the onset of the vertical portion of the injector tube which adds support to the long tube. Thickness of the standoff is calculated to define and enforce a specified separation distance between liner and injector, as well as to provide dual alignment points at the base of the liner and at the tip of the injector.

A baffled liner cover supported at the top of a liner surrounding a wafer support tower for semiconductor thermal processing. The cover may present a continuous horizontal surface for preventing particles from falling within the liner but present horizontal extending gas passageways in a baffle assembly to allow the flow of processing gas through the cover. In one embodiment, the baffle assembly includes a cup-shaped member disposed in a central aperture of a top plate having an open top, a continuous bottom, horizontal holes through the sides, and a flange around sides defining a convolute annular passage. Alternatively, the planar top plate may included slanted holes therethrough or vertical holes occupying a small fraction of the surface area. The liner and cover may be composed of quartz, silicon carbide, or preferably silicon.

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Gas distribution assemblies and processing chambers using same are described. The gas distribution assemblies comprise a cooling plate with a quartz puck, a plurality of reactive gas sectors and a plurality of purge gas sectors suspended therefrom. The reactive gas sectors and purge gas sectors having a coaxial gas inlet with inner tubes and outer tubes, the inner tubes and outer tubes in fluid communication with different gas or vacuum ports in the front faces of the sectors. The sectors may be suspended from the cooling plate by a plurality of suspension rods comprising a metal rod body with an enlarged lower end positioned within a quartz frame with a silicon washer around the enlarged lower end.

An apparatus and method for ultraviolet irradiation of air for the purpose of removing contaminants from that air is disclosed. A U-shaped ultraviolet bulb enshrouded within a quartz tube provides enhanced contaminant destruction characteristics. By combining a plurality of those bulbs in a chamber that is of polished aluminum, and further combining aluminum filters therewith, added irradiation enhancement is achieved. Further provided are baffles or baffling proximate the ultraviolet bulbs that cause the air to go turbulent thus drawing the air closer to the ultraviolet bulb and further enhancing the contaminant destruction characteristics. Moreover disclosed is treatment of substrates with a chemical agent that facilitates the arrest of contaminants from the air onto the substrate for further irradiation of the contaminants from the bulbs. This further irradiation breaks down the arrested contaminants thus providing the substrate with a self-cleansing effect.

A method of making an optical fiber precursor includes generating vapors from an alkali metal source comprising compound containing oxygen and one or more alkali metals and applying the vapors to a surface of a glass article comprising silica at a temperature that promotes diffusion of the alkali metal into the surface of the glass article. An optical fiber has a core comprising silica and an alkali metal oxide of the form X₂O, where X is selected from the group consisting of K, Na, Li, Cs, and Rb, wherein a concentration of the alkali metal oxide along a length of the core is uniform.

A quartz jig of this invention is such as being provided inside a semiconductor manufacturing apparatus allowing therein growth of an epitaxial layer on a main surface of a semiconductor wafer, capable of supporting a soaking jig which keeps, during epitaxial growth, uniform temperature of a susceptor allowing thereon placement of the semiconductor wafer, and has the top surface thereof aligned almost at the same level of height with the top surface of the susceptor, and is characterized as being composed of transparent quartz at least in a portion thereof brought into contact with the soaking jig. This configuration successfully provides a quartz jig supporting the soaking jig in the semiconductor manufacturing apparatus while suppressing generation of particles, and a semiconductor manufacturing apparatus provided with this sort of quartz jig.

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal/mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

PCT No. PCT/US97/04398 Sec. 371 Date Sep. 18, 1998 Sec. 102(e) Date Sep. 18, 1998 PCT Filed Mar. 19, 1997 PCT Pub. No. WO97/35176 PCT Pub. Date Sep. 25, 1997Improvements in a biosensor of the type having reservoirs or wells for analyzing a biological liquid are disclosed. A biosensor (190) includes a waveguide (164) placed between a plurality of members such as plates (100, 186), at least one of the members (100) being formed to define the walls (132, 134, 136) of the reservoirs where the liquid is biologically analyzed. The walls of the reservoirs are made of an inert, opaque material such as a metal. Although the biosensor may include a gasket (162), the gasket is associated with the members and waveguide in such a way (e.g. by recessing the gasket into a channel formed into a metal plate) so that the gasket does not form any significant portion of the reservoir wall. Waveguides of varying composition (e.g. plastic, quartz or glass) may be associated with the members to form the biosensor. The metal plate of the biosensor has input and output ports for infusing, draining, or oscillating the liquid to be analyzed in the reaction reservoir. Also disclosed is a sled-shaped waveguide associated with a rear lens to couple light out of the waveguide to serve as a quality control measure thus insuring that the biosensor is properly placed and that the light is working.

The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.

A lighting system with removable light modules mounted on a frame by an attractive force between magnetic material of the light module and magnetic material of the frame such that a light module may be installed on, removed from, or relocated on the frame manually without tools or permanent electrical connection. The frame may be one-, two-, or three-dimensional, and it may provide an aesthetic appearance even when the lighting system is not illuminated. The light modules may employ incandescent, quartz-halogen, LED, or fluorescent light sources. Particularly, in LED embodiments, the magnetic materials serve the dual functions of mounting and heat sinking. The lighting system may be utilized as a sign, signaling device, or a building block in larger lighting systems. The lighting system has a wide variety of applications and provides a user with improved ability to control the quantity, direction, and characteristics of the emitted light.

The invention relates to: a method of preparing glass-ceramics of β-quartz and/or of β-spodumene; a method of preparing articles made from said glass-ceramics; novel glass-ceramics of β-quartz and/or of β-spodumene; articles made from said novel glass-ceramics; and lithium aluminosilicate glasses, which are precursors of such novel glass-ceramics. The present invention relates to the use, as agent for fining the glass-ceramic glass precursor, of fluorine and at least one oxide of a multivalent element.

A lightwave oven for cooking with light having wavelengths in the visible, near visible, and infra-red spectral ranges uses one or more quartz halogen tungsten lamps or quartz arc bulbs positioned above and below the food item and delivers light energy in select ranges of the electromagnetic spectrum during select portions of the cooking cycle.

A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium arsenide, gallium nitride, quartz). The substrate has a film characterized by a non-uniform surface, which includes a plurality of defects. At least some of the defects are of a size ranging from about 100 Angstroms and greater. The method also includes applying a combination of a deposition species for deposition of a deposition material and an etching species for etching etchable material. The combination of the deposition species and the etching species contact the non-uniform surface in a thermal setting to reduce a level of non-uniformity of the non-uniform surface by filling a portion of the defects to smooth the film of material. The smoothed film of material is substantially free from the defects and is characterized by a surface roughness of a predetermined value.

The invention is directed to ultra-low expansion glasses to which adjustments have been made to selected variables in order to improve the properties of the glasses, and particularly to lower the expansivity of the glasses. The glasses are titania-doped silica glasses. The variables being adjusted include an adjustment in β-OH level; an adjustment to the cooling rate of the molten glass material through the setting point; and the addition of selected dopants to impact the CTE behavior.

A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface. The height of the nanotube bundles above the substrate is determined by the duration of the catalysis step. The nanotube bundles only grow from the patterned regions.

A sensor device for detecting the presence of a gas species in a gas environment susceptible to the presence of same. The sensor device may include a piezoelectric crystal coated with a sensor material having adsorptive affinity for the gas species, with an electric oscillator arranged for applying an oscillating electric field to the piezoelectric crystal to generate an output frequency therefrom indicative of the presence of the gas species when present in the gas environment, when the gas environment is exposed to the piezoelectric crystal. Another aspect of the invention involves a porous polymeric material that may be employed as a sensor material on a piezoelectric crystal sensor device, as well as a quartz microbalance holder that enables reactor gas monitoring. The sensor device alternatively may comprise an optical sensor arranged in a non-contaminating fashion in relation to the gas environment being monitored.

The invention provides high-strength and high-toughness reactive powder concrete of a carbon doped nano-tube. The high-strength and high-toughness reactive powder concrete is prepared by taking cement, a carbon nano-tube, silica fume, a water reducing agent, silica sand, coal ash, quartz powder, steel fiber and water as raw materials, wherein all the components in the mixture are calculated in parts by mass: 1000-1200 parts of cement, 250-350 parts of silica fume, 250-350 parts of slag powder, 40-50 parts of water reducing agent, 1200-1400 parts of silica sand, 180-230 parts of water, 190-230 parts of steel fiber, 180-250 parts of coal ash, 80-120 parts of quartz powder, 0.1-5 parts of carbon-nano-tube dispersing agent and 1-10 parts of carbon nano-tube powder. The invention also provides a preparation method of the high-strength and high-toughness reactive powder concrete. The reactive powder concrete obtained by the invention has the high compression strength of 250-300MPa and breaking strength of 45-60MPa, which are higher than the 200-level related performances of the traditional RPC (Reactive Powder Concrete). Meanwhile, the initial cracking strength of the reactive powder concrete material prepared by using the carbon nano-tube is greatly improved and is up to 10MPa in a direct stretching state, and the tensile strain corresponding to peak stress is up to more than 0.5%, so that the toughness and strength of the traditional RPC material are greatly improved.

Dithioamine reducing agents useful for the reduction of disulfide bonds. The reducing agents of this invention are useful, for example, to reduce disulfide bonds, particularly in proteins, or to prevent the formation of disulfide bonds, particularly in proteins and other biological molecules. Reducing agents of this invention are useful and suitable for application in a variety of biological applications, particularly as research and synthetic reagents. The invention provides S-acylated dithioamines which can be selectively activated reducing agents by removal of the S-acyl groups enzymatically or chemically. The invention further provides dithiane precursors of thioamino reducing agents. The invention provides dithioamine reducing agents, S-acylated dithioamines and dithianes which are immobilized on surfaces, including among others, glass, quartz, microparticles, nanoparticles and resins.

PCT No. PCT/EP97/03818 Sec. 371 Date Mar. 3, 1998 Sec. 102(e) Date Mar. 3, 1998 PCT Filed Jul. 17, 1997 PCT Pub. No. WO98/03440 PCT Pub. Date Jan. 29, 1998In a known process for the production of quartz glass bodies, SiO2 particles are deposited of the mantle surface of a cylindrical carrier rotating about its longitudinal axis, forming an elongated, porous preform, where the SiO2 particles are formed in a plurality of flame hydrolysis burners which are arranged in at least one burner row parallel to the longitudinal axis of the carrier and are moved at a preset translational speed forward and back between turnaround points at which points their direction of movement is reversed, and in which process the preform is sintered. In order to make available on this basis an easily accomplished process that makes it possible to manufacture a preform which is largely free of localized density variations, the invention proposes on the one hand that the base value of the surface temperature of the preform being formed be kept in a range between 1,050 DEG C. and 1,350 DEG C., that the average peripheral velocity of the preform be kept in the range between 8 m/min and 15 m/min and the average translational velocity of the burner row be kept in a range between 300 mm/min and 800 mm/min. On the other hand, the object is also accomplished according to the invention and on the basis of the known process in that in the area of the turnaround points (A, B) the peripheral velocity of the preform being formed is increased and/or the flame temperature is lowered and/or the distance of the burners from the preform surface is changed.

In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an etchant and a silicon source. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during the process. In another embodiment, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. In another embodiment, a method for cleaning a process chamber is provided which includes exposing the interior surfaces with a chamber clean gas that contains an etchant and a silicon source. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

The invention discloses an autocollimation method of a carrier aircraft rotating type strapdown inertial navigation system under a shaking base, and belongs to the field of navigation. The autocollimation method comprises the following steps of: firstly obtaining the longitude and latitude of the position of a carrier, secondly collecting output signals of a fiber-optic gyro and a quartz flexible accelerometer in an inertia measurement unit, and then carrying out automatic compensation on a constant error of an inertia device by adopting a double-shaft rotating table rotatory IMU (inertial measurement unit) to form a rotating type strapdown inertial navigation system; and then calculating a rough initial posture array by utilizing gravity acceleration in an inertial coordinate system as a reference vector, establishing a state equation and a measuring equation again of the system, designing a vanishing adaptation Kalman filter to accurately estimate a misalignment angle of the carrier, and correcting a strapdown posture matrix by utilizing the misalignment angle to finish initial alignment and enter a navigation state. The method isolates the influence of shake of a vessel to initial alignment of a carrier aircraft, and dynamic random disturbance in measured noise is restrained through estimating the initial posture array of the system via the vanishing adaptation Kalman filter method, so that rapid autocollimation of the carrier aircraft rotating type strapdown inertial navigation system is realized.

The invention relates to a light-weight calcium silicate plate and a preparation method thereof. The light-weight calcium silicate plate comprises the following components in percentage by mass: 11-44.4% of siliceous filler, 30-40% of cement, 4.4% of calcific filler, 6-10% of fiber material, 3-5% of inorganic filler and 3-10% of reaction assistant, wherein the siliceous filler contains a light-weight siliceous material accounting for 22.2-44.4% of the total mass of the light-weight calcium silicate plate; and the sum of the mass percents of the components is 100%. According to the invention, the light-weight calcium silicate plate having low density and high strength is prepared through a slurry flow process by completely using high-activity amorphous kieselguhr instead of the traditional quartz sand as the siliceous material; and the process is simple and can be completed according to the existing technical process without changing the original calcium silicate plate production line and production conditions, and the production process does not increase the cost and can still achieve favorable effect.