213 results about "Plasma cleaning" patented technology

The invention belongs to the technical field of powder metallurgy, and particularly relates to a high-fluidity MIM metal feed and a forming process thereof.The high-fluidity MIM metal feed is composed of the following materials: metal powder: spherical metal powder (a titanium alloy TC4 material), polycaprolactone and graphene nanosheets; wherein the volume ratios are 68-72 vol%, 0.5-2 wt% (based on the mass of the metal powder) and 0.1-0.5 wt% (based on the mass of the metal powder) respectively; a powder oxide layer is removed through vacuum plasma cleaning (300-500 W, argon atmosphere), a metal core-PCL / graphene shell structure is prepared in combination with ultrasonic-assisted in-situ polymerization, lubrication and adhesion enhancement are synchronously achieved, the powder oxygen content is controlled to be smaller than 500 ppm, and sintering oxidation defects are reduced.

The application relates to the technical field of plasma cleaning machines, and discloses a plasma cleaning machine for semiconductor processing, which comprises a main body assembly, a main machine, a connecting sleeve fixed at the bottom of the main machine, an insulating sleeve arranged at the bottom of the connecting sleeve, an inner sleeve arranged outside the insulating sleeve, an outer sleeve arranged outside the inner sleeve, a spray head arranged at the bottom of the outer sleeve, a fixing assembly arranged in the outer sleeve, an extrusion ring fixed to the inner wall of the outer sleeve, an extrusion column arranged at the bottom of the inner sleeve, a mounting sleeve fixed in the outer sleeve, a clamping block arranged in the mounting sleeve, and a fixing sleeve fixed at the bottom of the main machine. The application has the beneficial effect that: through the arrangement of the fixing assembly, the dismounting or fixing of multiple components can be completed at one time when the gun head is dismounted and fixed, so that the maintenance time can be reduced, and the situation that a certain component is missed to be fixed can be avoided.

The present invention proposes a drum-type vacuum plasma cleaning equipment, comprising an outer sleeve and an inner drum arranged in the outer sleeve and rotatably connected to the outer sleeve. The outer sleeve is provided with an exhaust pipe connected to a vacuum pumping device and an electrode rod. The electrode rod passes through the outer sleeve and enters the inner drum. A gas flow groove for allowing process gas to enter the inner drum is provided in the electrode rod. The outer sleeve is provided with a driving assembly for driving the inner drum to rotate. The inner cavity of the inner drum is provided with a breaking up assembly for breaking up compacted materials. The drum-type vacuum plasma cleaning equipment breaks up compacted materials through the breaking up assembly, thereby reducing the possibility of poor cleaning effect of the compacted materials.

The invention relates to the technical field of plasma cleaning, in particular to a drum type vacuum plasma cleaning machine which comprises a shell, the interior of the shell is a sealed environment, a cleaning cavity is rotatably installed in the shell, and a drum assembly is rotatably installed in the cleaning cavity. The roller assembly comprises a cylinder screen, a second side plate, two supporting rings and a plurality of first side plates. The first side plate and the second side plate rotate along with the drum screen, so that materials roll over when the drum screen rotates, the plasma cleaning uniformity is improved, meanwhile, the materials roll over to impact the drum screen, dust on the side wall of the drum screen is cleaned, and the cleaning efficiency is improved through the continuous switching state of the cleaning cavity. And the rolling frequency and strength of the materials in the drum screen are improved, and the uniformity of plasma cleaning is further improved. The materials are thrown upwards through rotation of the flexible strips, the collision force between the materials and between the materials and the drum screen is increased, and cleaning of dust in the drum screen and dust on the outer surfaces of the materials is further improved.

The invention relates to the technical field of plasma cleaning, and discloses a plasma treatment method for a metal plate after laser etching, which comprises the following steps: cleaning the surface of the metal plate after laser etching, putting the metal plate into plasma cleaning equipment, and carrying out plasma cleaning treatment at preset gas flow and preset radio frequency power; the duration of plasma cleaning treatment is preset as the first duration, cleanliness detection data and surface roughness detection data of the metal plate subjected to plasma cleaning for the first duration are obtained, a cleanliness score is calculated, and whether post-cleaning treatment is carried out or not is determined according to the cleanliness score; and after it is determined that post-cleaning treatment is carried out, after the post-cleaning treatment is finished for a second time length, metal plate treatment is completed. According to the method, the metal plate subjected to laser etching is subjected to plasma cleaning, and the process parameters of plasma cleaning equipment are controlled, so that the plasma is in full contact with the surface of the metal plate and reacts with the surface of the metal plate, and the cleaning purpose is achieved.

The present application relates to the technical field of intelligent predictive maintenance of industrial equipment, in particular to a low-temperature plasma cleaning machine intelligent predictive maintenance method and system; the method comprises the following steps: collecting set power, actual output power, nozzle inlet air pressure, spray gun temperature, control instructions and the time stamp of all data, and establishing a runtime sequence dataset; calculating a discharge path drift index, a jet channel impedance mutation rate index and an energy response lag coefficient based on the runtime sequence dataset; constructing an energy transmission link degradation prediction model, and constructing a multi-level energy link causal structure diagram based on the energy transmission link degradation prediction model, executing a phase consistency link matching determination rule, and generating a degradation phase determination result; determining a low-temperature plasma cleaning machine fault list and a maintenance list. The present application realizes intelligent predictive maintenance and positioning of the energy transmission degradation phase fault of the low-temperature plasma cleaning machine.

Disclosed is a method and apparatus configured to perform an in-situ plasma cleaning of an end effector. The method comprises moving the end effector into a process module from a vacuum transfer module attached to the process module, positioning the end effector below a gas distribution plate, flowing a plasma over the gas distribution plate, exposing the end effector to the plasma, and retracting the end effector into the vacuum transfer module.

The invention relates to the technical field of plasma, in particular to a plasma cleaning device capable of being spliced. The plasma generator comprises a main cavity, side plates, an electrode assembly and a high-voltage electric connector, the side plates are connected to the two sides of the main cavity in a sealed mode, the main cavity is formed by splicing a plurality of cavity modules, each cavity module is provided with a discharge area, an exhaust area, a plasma air outlet, an exhaust inlet and a splicing installation position, the discharge areas of the multiple cavity modules are communicated, and the exhaust areas of the multiple cavity modules are communicated with the splicing installation position. The exhaust areas of the plurality of cavity modules are communicated, the discharge areas are isolated from the exhaust areas, the plasma gas outlets are communicated with the discharge areas, the exhaust inlets are communicated with the exhaust areas, an electrode assembly is installed in the discharge area of each cavity module, and the high-voltage electric connectors are connected with the electrode assemblies. And the side plates and the cavity modules are positioned, butted and fixed through the splicing mounting positions. The cleaning heads with different lengths are composed of a modular product and can be spliced and customized according to customer requirements, and the overall transformation cost and the manufacturing cost can be reduced.

The invention discloses a radio frequency plasma cleaning device, which relates to the technical field of plasma cleaning equipment, and comprises a starting system, a vacuum system and a control system, the starting system comprises an outer shell, an airflow regulator, a quartz hollow tube and an inductance driving coil; the outer shell is provided with an inner cavity, the airflow regulator and the quartz hollow tube are arranged in the inner cavity, and the airflow regulator can regulate gas flow; the inductance driving coil is sleeved outside the quartz hollow tube; the vacuum system comprises a vacuum cabin, an objective table and vacuumizing equipment; the objective table is fixed in the vacuum cabin, an extraction opening of vacuumizing equipment is communicated with the interior of the cabin, and a communicating opening, corresponding to the upper portion of the objective table, of the vacuum cabin is communicated with a lower end opening of the quartz hollow tube; the control system comprises a radio frequency power supply which can provide radio frequency energy for the inductance driving coil, the power of the control system is adjustable, and the cleaning gas can be switched into different gases. The device is small in size, light in weight, compact in structure and low in cost.

1. The name of the design product: roller type plasma cleaning device. 2. The use of the design product: roller type plasma cleaning equipment for loading materials to be surface treated and plasma cleaning thereof. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: assembly state perspective view.

The invention belongs to the technical field of variable optical films, discloses a multifunctional composite variable optical film and a preparation method thereof, and aims at solving the problems that an existing variable optical film is single in function, unstable in optical performance, poor in flexibility and bending resistance and low in process precision. The preparation method comprises the following steps: pre-treating the base material: sequentially carrying out plasma cleaning on the PET base material and sputtering the ITO conductive layer, sequentially carrying out ultrasonic cleaning on the glass substrate and preparing the YAG powder enhancement layer; the coating of the functional layer is that the surface of the ITO layer of the PET-ITO composite base material is coated with a PDLC layer and an electrochromic layer, and the surface of the YAG layer of the YAG-glass composite base material is coated with a temperature-sensitive layer; the compounding and curing are as follows: firstly laminating after aligning and compounding, and then carrying out UV segmented curing. The light transmittance of the product can be adjusted by 5-95% in an electric field, and the infrared reflectivity is gt; and after the ITO layer is bent for 1000 times and the bending radius is 5mm, the resistance change rate is less than or equal to 10%, so that the ITO film is suitable for a sunshade film for a vehicle and an intelligent window of a building.

The invention relates to the technical field of industrial cleaning, in particular to an annular pulse plasma cleaning device and method for a precise instrument. According to the technical scheme, the plasma cleaning device comprises a high-voltage pulse power supply, a host device, a supporting bracket and an object carrying platform, the high-voltage pulse power supply, the host device, the supporting bracket and the carrying platform are sequentially arranged from top to bottom; the host device comprises an air valve, an outer electrode, a diagnosis port, a cylindrical inner electrode, a conical inner electrode, a solenoid, a top flange, an insulating part, a sealing part and a control computer. High-density compact ring plasma clusters are adopted for pulse type directional cleaning, cleaning uniformity is improved, heat input is greatly reduced due to the instantaneous energy deposition characteristic, damage to heat-sensitive materials is avoided, the modular generator is compact in structure and convenient and fast to maintain, accurate positioning is achieved through cooperation with X-axis and Y-axis guide rails, and the service life of the modular generator is prolonged. The device is suitable for efficient cleaning of complex structures and stubborn pollutants.

The utility model provides a plasma cleaning cavity and cleaning equipment, and relates to the technical field of semiconductor equipment. The plasma cleaning cavity comprises an upper cover, a cavity body, a placement table, a first heating disc, a second heating disc and a heat conduction piece. The cavity is provided with an opening, and the upper cover is connected with the cavity to seal the opening. The placing table is used for bearing a wafer; the placing table is arranged in the cavity. The first heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The second heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The first heating disc and the second heating disc are arranged at intervals. The heat conduction piece is arranged between the first heating disc and the second heating disc. According to the plasma cleaning cavity, the placement table is uniformly heated, and the cleaning quality can be improved.

The present invention discloses a cart-type large-box plasma cleaning device, comprising a main frame and a material cart. The main frame is provided with a vacuum chamber and an electrical chamber. The vacuum chamber has a vacuum cavity with a length, width, and height greater than 1 meter. The inner sidewall of the vacuum cavity is provided with a vacuum port, an electrode feed port, a temperature measuring port, and a working gas port, which is connected to a gas source device via a gas pipeline. The material cart comprises a carrier and a material frame, a limiting track is provided on the upper surface of the base frame, and insulating fixing blocks are provided between each electrode plate and support plate and the material frame. An electrode assembly is provided on the front side of the material frame, and the electrode assembly is electrically connected to an electrode pair that constitutes plasma excitation. An electrode plate is provided below the bottom support plate, and the electrode pair includes at least all the electrode plates. The present invention can be used to simultaneously clean multiple large-area product materials, improving the quality and efficiency of plasma cleaning.

The application provides a method for cleaning a substrate by plasma, which comprises the following steps: providing a substrate to be cleaned and a plasma cleaning device, wherein the device comprises a cleaning cavity, a U-shaped track, a control module and parallel polar plates, the U-shaped track is located between the parallel polar plates; placing two ends of the substrate respectively into U-shaped slots of the U-shaped track, and the substrate is parallel to the parallel polar plates; cleaning the substrate for a preset time with preset parameters, and the control module monitors the voltage difference between the lower polar plate in the parallel polar plates and the substrate in real time, and the control module automatically adjusts the parameters when the voltage difference exceeds the preset pressure difference; after the preset time is over, detecting the surface of the substrate, and if the surface of the substrate is unqualified, repeating the steps of placing the substrate and cleaning the substrate until the surface of the substrate is qualified. The application fixes the substrate by the U-shaped slots, avoids the warping of the substrate during the cleaning process, and improves the reliability and yield of the product in combination with the control module.

The invention belongs to the technical field of double-layer copper-plated conductors, and provides a double-layer copper-plated conductor precisely regulated and controlled automatic electroplating production line system which is characterized in that an inert gas transition cabin with the argon purity not lower than 99.999% and the pressure maintained to be 5-10 kPa is arranged between a first-layer plating tank and a second-layer plating tank, 5-10 nm precise etching is achieved through low-temperature plasma cleaning, and a second-layer plating tank is arranged between the first-layer plating tank and the second-layer plating tank; a roughened grain boundary structure is formed, an EBSD sensor is adopted to collect grain texture direction and size data of a bottom-layer copper coating, a crystal structure analytical model is constructed based on a CNN in combination with a lattice matching database, a crystal nucleus growth induction target is output, and real-time production parameters and parameter threshold ranges corresponding to the induction target are compared; dynamically regulating and controlling production parameters through a PID algorithm; epitaxial growth of the two copper plating layers is achieved, the interface internal stress is remarkably reduced, the bending life of the conductor is prolonged, the structural reliability of the conductor is improved, and the performance requirements of high-end equipment for high-frequency communication, flexible electronics and the like are met.

The invention relates to the technical field of semiconductor chip manufacturing, and discloses plasma cleaning equipment which comprises two vertical plates, a fixed table, a dust collecting box with an opening in the front side wall, an inferior product collecting box, a qualified product collecting box, a driving transportation assembly, a cleaning mechanism, a dust removal mechanism and a visual inspection assembly. A plurality of rotating shafts are rotationally connected between the two vertical plates at equal intervals, the multiple rotating shafts are jointly sleeved with a conveying belt, the visual detection assembly is matched with the inferior product collecting box and the qualified product collecting box, and automatic quality detection and sorting of cleaned products can be achieved. A visual detection head can quickly and accurately identify unqualified products, a second electric telescopic rod drives a material pushing plate to push the inferior products to an inferior product collecting box, qualified products are conveyed to the end along with a conveying belt and fall into a qualified product collecting box, manual intervention is not needed, the labor cost is reduced, the detection and sorting efficiency and accuracy are greatly improved, and the product quality is improved. The large-scale production requirements are met.

The invention provides an RPS source microwave plasma ionization chamber structure and a plasma cleaning machine, the RPS source microwave plasma ionization chamber structure comprises an ionization chamber, the ionization chamber is internally provided with a hollow ionization chamber, and the top of the ionization chamber is provided with a first air inlet hole; the dispersing head is connected with the first air inlet hole, a plurality of annular guide holes are formed in the end face part, opposite to the first air inlet hole, of the dispersing head, and the annular guide holes are arranged in a wavy outward radiation mode with the hole center of the first air inlet hole as the original point and used for dispersing air flow entering the ionization cavity through the first air inlet hole; according to the invention, the dispersion head with a plurality of annular guide holes arranged in a wavy outward radiation manner is mounted in the ionization cavity, so that microwaves and process gas can be dispersed according to regions and enter the ionization cavity through the dispersion head, and the introduced gas flow can stably and uniformly enter the interior of the cavity; and the microwave energy can be quickly and intensively focused on a set ionization area to form a high-concentration gas atmosphere, so that the ionization efficiency of the gas is effectively improved, and the cleaning with high plasma density is further ensured.

The application provides a bonding device and a bonding method. The bonding method comprises the following steps: providing a first carrier film and a second carrier film, the first carrier film carrying a plurality of chips, and the second carrier film carrying a wafer; covering the first carrier film and the second carrier film with a first shielding cover and a second shielding cover respectively, and the first shielding cover exposing part of the chips, and the second shielding cover exposing part of the surface of the wafer; performing a plasma cleaning process to activate part of the chips exposed by the first shielding cover and part of the surface of the wafer exposed by the second shielding cover; and bonding the activated part of the chips on the activated part of the surface of the wafer. The technical scheme of the application can reduce the probability of bonding failure.

The utility model discloses a kind of plasma cleaning plate, including bottom plate, bottom plate is provided with cathode, the surface of bottom plate is opened with at least one cathode groove, cathode groove is U shape, by the cathode groove design is U-shaped curved surface, the contact area of cathode and anode is significantly increased 30%-50%, current density distribution is optimized, make ionization area more concentrated and uniform, greatly improve the energy density of plasma arc and atmosphere dissociation degree, and, plasma can be maintained in lower temperature state in generation and effect process, unnecessary heat loss is reduced, to realize the effect of energy saving, at least one row of array distribution's plasma cleaning hole is equipped in cathode groove, and staggered distribution design is adopted, so that plasma beam is ejected at different angles and positions, form interlaced covering jet field, not only significantly improve cleaning efficiency, make cleaning process more efficient, can also ensure that cleaning has no dead angle, more comprehensive.

The invention discloses a micro-nano device photoetching process based on surface energy repair and a micro-nano device, and relates to the technical field of photoetching. The process provided by the invention comprises the following steps: carrying out plasma cleaning on a substrate, immersing the substrate subjected to plasma cleaning into an organic cleaning solvent, and removing an unstable metamorphic layer and pollutants on the surface of the substrate by adopting at least one of soaking, stirring and ultrasonic treatment, then, the cleaned substrate is adopted to carry out subsequent photoetching and micro-nano machining processes; the step of organic solvent cleaning is added after substrate plasma cleaning, an unstable metamorphic layer is disintegrated and other impurities are removed through permeation and slight dissolution effects of an organic solvent on the surface of the substrate, so that the surface of the substrate is recovered to a smooth and stable state; therefore, the defects of edge collapse, side wall roughness and the like of the photoresist pattern in the photoetching process are remarkably reduced, and the photoetching morphology precision and the production yield of the micro-nano device are effectively improved.

The utility model relates to a kind of electric plasma cleaning machine, wherein electric plasma cleaning machine includes fixed plate and briquetting, fixed plate is installed in the side of upper cover towards cavity bottom, the side of fixed plate towards cavity bottom is provided with sliding slot, briquetting is installed in sliding slot, briquetting has the first height along vertical direction, substrate has the second height along vertical direction, the distance between fixed plate and the bottom of cavity is equal to the sum of first height and second height.The utility model can install fixed plate and briquetting on upper cover, directly exert pressure on substrate by briquetting, and adjust the position of briquetting by fixed plate, effectively avoid cleaning abnormal situation caused by substrate deformation warping.

The plasma equipment electrode bar structure comprises a columnar main body made of conductive metal, the main body is provided with a cooling water channel, the cooling water channel comprises a water inlet channel and a water drainage channel, the water inlet channel extends into the inner end of the main body from a water inlet at the tail end of the outer end of the main body, and the water drainage channel extends into the inner end of the main body from a water outlet at the tail end of the outer end of the main body. The drainage channel is communicated with the water inlet channel at the tail end of the inner end part of the main body, is arranged in parallel with the water inlet channel and extends to a drainage port at the outer end part of the main body, and the water inlet and the drainage port are respectively connected with a water delivery port and a water pumping port of a cooling-water machine through hose bundles; an electrode connecting part and a mounting part are arranged at the tail end of the outer end part of the main body, and an insulating sealing structure is arranged outside the mounting part and is used for being inserted into a box mounting hole of equipment to form a sealing and insulating connecting structure; and the electrode connecting part is provided with a metal connecting point which is electrically connected with one electrode of an external plasma radio frequency power supply. The plasma cleaning device is simple in structure, the space in the plasma cleaning box body is larger, and plasma gas excitation is more stable and efficient.

The utility model relates to an assembly line type double-end plasma cleaning machine. Comprising a conveying assembly used for conveying workpieces, a movable assembly installed on the conveying assembly, a cleaning assembly installed on the movable assembly and used for cleaning the workpieces on the conveying assembly, and a recycling assembly installed on the conveying assembly and used for recycling waste gas generated during cleaning of the cleaning assembly. The filtering assembly is mounted on the conveying assembly and is used for filtering the waste gas recycled on the recycling assembly; the recycling assembly is respectively communicated with the cleaning assembly and the filtering assembly; the recovery assembly comprises a fixed cover and a waste gas recovery part, wherein the fixed cover is installed on the conveying assembly and used for covering the movable assembly, the cleaning assembly and the filtering assembly, and the waste gas recovery part is installed in the fixed cover and used for communicating the cleaning assembly with the filtering assembly. And the stability and the consistency of the cleaning quality can be maintained.

The invention provides a target material sputtering angle control device for PET copper foil manufacturing. The target material sputtering angle control device is used for solving the problems that in the prior art, the target material utilization rate is low, the film coating uniformity is poor, the target material service life is short, replacement is tedious, the process adaptability is limited, and the production efficiency is limited. Therefore, the target material sputtering angle control device for manufacturing the PET copper foil comprises a sealed working cabin, an unwinding end, a vacuum sputtering cavity, an argon plasma cleaning cavity, an inert gas transition cavity, a horizontal electroplating section and a winding end, and all the cavities are sequentially connected end to end and communicated with one another. A magnetic pole mechanism and a target material supporting and adjusting mechanism are arranged in the vacuum sputtering cavity, the target material supporting and adjusting mechanism is used for adjusting the position and sputtering angle of a target material, and the target material supporting and adjusting mechanism is cooperatively matched with the magnetic pole mechanism, so that the position of the target material can be dynamically adjusted, magnetic field distribution is optimized, an effective etching area is expanded, plasma density distribution is optimized, and edge material waste is reduced; the target material utilization rate is improved, and the coating uniformity is ensured.

The utility model relates to the technical field of plasma cleaning machines, and discloses a multi-chamber plasma cleaning device which comprises a box body, two groups of sliding rails are fixedly connected in the box body, a mounting seat is connected outside the sliding rails in a sliding mode, a dismounting mechanism is arranged in the mounting seat, and the dismounting mechanism is connected with the box body in a sliding mode. The interior of the box body is fixedly connected with a plurality of plasma generators, the exterior of the box body is rotatably connected with a box door, the dismounting mechanism comprises a mounting groove, the mounting groove is formed in the mounting base, the interior of the mounting groove is fixedly connected with a spring, and the end, away from the mounting groove, of the spring is fixedly connected with a sliding plate; and the exterior of the sliding plate is slidably connected to the interior of the mounting groove. According to the device, the cleaning cavity can be conveniently taken out for maintenance through the dismounting mechanism, meanwhile, the getter pump and the treatment box are used for ensuring that waste gas reaches the standard to be discharged, and the maintenance convenience and the environmental protection performance of equipment are effectively improved.

1. Name of the designed product: plasma cleaning machine. 2. Use of the designed product: for processing product surface. 3. Design points of the designed product: in shape. 4. Picture or photo best showing the design points: perspective view.

The utility model relates to a lens plasma cleaning tray, include: tray, be equipped with a plurality of with array form distribution's convex on the upper surface of tray, the area of the region of distribution convex on tray is bigger than the area of single lens, and the gap between two adjacent convexes has and the size of center spacing is smaller than the size of single lens. Advantageous effect is: the tray can place a plurality of lenses in the region of distribution convex, and can guarantee that the lens is not inclined after placing, since the lens is supported by a plurality of convexes, compared with sticking to the tray, the other surfaces (five surfaces) of the lens and the downward surface can contact the plasma gas during plasma cleaning, and the corresponding bonding standard can be cleaned, so that the situation of confusing A and B surfaces will not occur, and the tray can use an automatic suction nozzle to suck the lens, which greatly improves the efficiency compared with manual use of tweezers.

The invention discloses a sintering method of an aluminum oxide electrostatic chuck, and belongs to the technical field of electrostatic chucks, and the sintering method comprises the following steps: S1, preparing an insulating layer substrate from raw materials and a multilayer structure, depositing an electrode layer on the insulating layer substrate, coating the electrode layer with aluminum oxide nano powder to form a dielectric layer, and spraying a silicon carbide coating on the surface of the dielectric layer to form the multilayer structure; s2, primary sintering is conducted, specifically, the multi-layer structure is placed in a vacuum sintering furnace to be subjected to primary sintering; s3, secondary sintering is conducted, specifically, the multi-layer structure obtained after primary sintering is subjected to secondary sintering through the pulse discharge plasma sintering technology, and cooling is conducted after secondary sintering; s4, the heat-conducting glue is attached to and integrated with the cooling base, the bottom of the insulation layer base body obtained after secondary sintering of the multi-layer structure is coated with the heat-conducting glue, the insulation layer base body and the cooling base are pressed, the electrostatic chuck is manufactured, and plasma cleaning is conducted on the surface of the electrostatic chuck; and S5, performing performance optimization treatment, namely performing high-voltage corona treatment on the electrostatic chuck.

The utility model discloses a plasma cleaning device with a material recognition function, relates to the technical field of plasma cleaning, and aims to solve the problems that an existing plasma cleaning device lacks a structure for recognizing materials, cannot recognize cleaned materials in batches, is inconvenient to quickly record information of cleaned products, and is inconvenient to use. According to the technical scheme, the device is characterized by comprising a steel belt conveyor, a first support is fixedly connected to the outer side of the steel belt conveyor, an electric sliding rail is fixedly connected to the outer side of the first support, an electric sliding block is arranged on the outer side of the electric sliding rail, and a carrier plate is fixedly connected to the outer side of the electric sliding block; an industrial camera is fixedly connected into the carrying plate, a supporting block is fixedly connected to the outer side of the first support, a fixing piece is fixedly connected to the outer side of the supporting block, and a material recognition sensor is inserted into the fixing piece. And the effects of convenient use and efficient work are achieved.