287 results about "Plasma cleaning" patented technology

The invention discloses a circuit board etching device and method, and the method comprises the steps: S1, providing a substrate, forming a laser activation micro-channel on the surface of the substrate, carrying out the plasma cleaning of the substrate, and pressing a gradient copper foil layer; s2, based on the thickness distribution data of the gradient copper foil layer, establishing an etching parameter prediction model, and generating a pressure-temperature dynamic regulation and control curve; s3, preparing a first-stage etching solution, carrying out spraying treatment, and etching the surface layer of the gradient copper foil layer under the assistance of ultrasonic waves to form a porous layer; s4, switching to a second-stage etching solution to directionally etch the porous layer of the gradient copper foil layer to a target residual thickness; s5, performing surface leveling treatment on the etched circuit board, and verifying the etching precision based on a high-frequency impedance test result; gradient copper layer dynamic parameter regulation and control are combined with a two-stage etching process, high-frequency impedance verification and surface leveling have a synergistic effect, signal transmission loss can be reduced, and the method is suitable for manufacturing high-frequency and high-speed circuit boards.

The utility model provides a plasma cleaning device, and belongs to the technical field of semiconductor production equipment, the plasma cleaning device comprises a cavity, and a chamber is arranged in the cavity; the cover plate covers the upper end of the cavity; the remote plasma source is connected to the central position of the protruding part; the gas blocking part is arranged in the conical cavity; the first gas homogenizing plate is arranged below the gas blocking part; the second gas uniformizing plate is arranged below the first gas uniformizing plate; and a substrate table. The cover plate and the gas blocking part can uniformly disperse plasma gas fed by a remote plasma source into the cavity, then the plasma gas is further homogenized through the first gas homogenizing plate to ensure the gas uniformity of a substrate area, and meanwhile, the vacuum mechanism is generally connected to the bottom of the cavity, so that the gas is downwards pumped through the second gas homogenizing plate during gas pumping, and the gas uniformity of the substrate area is ensured. The gas uniformity in the chamber can be effectively ensured, so that the etching uniformity and the etching rate are improved.

The invention discloses a high-voltage cable surface defect plasma cleaning method and system, and relates to the technical field of plasma cleaning, and the method comprises the steps: recognizing the surface defect type of a to-be-cleaned high-voltage cable; after the high-voltage cable to be cleaned is fixed in the cleaning work space, a first simulation cleaning control combination and a second simulation cleaning control combination are configured; regulating and controlling by using the regional temperature field of the cleaning working space, and dynamically regulating the contact angle resolution; and meanwhile, the cleaning effect is fed back in real time in combination with a plasma density sensor, and when it is detected that local cleaning is not thorough, a dynamic complementary scanning protocol is triggered. The technical problem that in the prior art, the cleaning effect is poor due to the fact that the cleaning precision of the surface defects of the high-voltage cable is insufficient and local cleaning is not thorough is solved, and the technical effects that precise cleaning of the surface defects of the high-voltage cable and dynamic repair sweeping of the local incomplete area are achieved, and the cleaning quality is improved are achieved.

The utility model provides a plasma cleaning machine which comprises a cleaning machine body, a support is fixed to an inner cavity of the cleaning machine body, two oppositely-arranged rollers are arranged in the support and used for containing particle powder to be cleaned, and a control assembly for controlling the two rollers to rotate so as to improve the cleaning efficiency is arranged on the support. Each roller is correspondingly provided with an electrode assembly, each electrode assembly penetrates into the inner cavity of the cleaning machine body and enters the corresponding roller, the electrode assemblies receive voltage conducted by the plasma generator, gas in the inner cavities of the rollers is excited to be in a plasma state, and the plasma cleaning machine and the electrode assemblies receive the voltage conducted by the plasma generator. Gas in the inner cavities of the rollers is excited to be in a plasma state, vacuum plasma cleaning is conducted on particle powder, the particle powder is driven to turn over through the control assembly, the possibility that plasma cleaning is affected by mutual accumulation of the particle powder is reduced, the plasma cleaning quality is improved, and the particle powder cleaning efficiency is improved by arranging the two rollers.

The invention belongs to the technical field of cleaning equipment, and discloses plasma cleaning equipment which comprises a vacuum cleaning device, the vacuum cleaning device comprises a vacuum cleaning cavity, the vacuum cleaning cavity is provided with a cleaning cavity used for cleaning workpieces, the vacuum cleaning cavity comprises a base assembly and a cover assembly, and the cover assembly can vertically ascend and descend relative to the base assembly; the cleaning cavity is closed or opened; and the material moving device is arranged on the side of the vacuum cleaning cavity and comprises a horizontal material pushing mechanism, and when the cleaning cavity is opened, the horizontal material pushing mechanism can stretch into the cleaning cavity in the horizontal direction so as to push one carrier to move to the cleaning station from the feeding station and push the other carrier on the cleaning station to move to the discharging station at the same time. According to the plasma cleaning equipment, the automation degree and the material moving efficiency can be improved, dust generated in the cleaning cavity is greatly reduced, and the cleaning effect is better.

The invention belongs to the technical field of powder metallurgy, and particularly relates to a high-fluidity MIM metal feed and a forming process thereof.The high-fluidity MIM metal feed is composed of the following materials: metal powder: spherical metal powder (a titanium alloy TC4 material), polycaprolactone and graphene nanosheets; wherein the volume ratios are 68-72 vol%, 0.5-2 wt% (based on the mass of the metal powder) and 0.1-0.5 wt% (based on the mass of the metal powder) respectively; a powder oxide layer is removed through vacuum plasma cleaning (300-500 W, argon atmosphere), a metal core-PCL / graphene shell structure is prepared in combination with ultrasonic-assisted in-situ polymerization, lubrication and adhesion enhancement are synchronously achieved, the powder oxygen content is controlled to be smaller than 500 ppm, and sintering oxidation defects are reduced.

The application relates to the technical field of plasma cleaning machines, and discloses a plasma cleaning machine for semiconductor processing, which comprises a main body assembly, a main machine, a connecting sleeve fixed at the bottom of the main machine, an insulating sleeve arranged at the bottom of the connecting sleeve, an inner sleeve arranged outside the insulating sleeve, an outer sleeve arranged outside the inner sleeve, a spray head arranged at the bottom of the outer sleeve, a fixing assembly arranged in the outer sleeve, an extrusion ring fixed to the inner wall of the outer sleeve, an extrusion column arranged at the bottom of the inner sleeve, a mounting sleeve fixed in the outer sleeve, a clamping block arranged in the mounting sleeve, and a fixing sleeve fixed at the bottom of the main machine. The application has the beneficial effect that: through the arrangement of the fixing assembly, the dismounting or fixing of multiple components can be completed at one time when the gun head is dismounted and fixed, so that the maintenance time can be reduced, and the situation that a certain component is missed to be fixed can be avoided.

The present invention proposes a drum-type vacuum plasma cleaning equipment, comprising an outer sleeve and an inner drum arranged in the outer sleeve and rotatably connected to the outer sleeve. The outer sleeve is provided with an exhaust pipe connected to a vacuum pumping device and an electrode rod. The electrode rod passes through the outer sleeve and enters the inner drum. A gas flow groove for allowing process gas to enter the inner drum is provided in the electrode rod. The outer sleeve is provided with a driving assembly for driving the inner drum to rotate. The inner cavity of the inner drum is provided with a breaking up assembly for breaking up compacted materials. The drum-type vacuum plasma cleaning equipment breaks up compacted materials through the breaking up assembly, thereby reducing the possibility of poor cleaning effect of the compacted materials.

The invention discloses a low-temperature catalytic degreasing and rapid densifying process of an MIM (metal injection molding) forming part, which comprises the following steps: (1) low-temperature catalytic degreasing: in a nitrogen atmosphere, catalytically decomposing a POM (polyoxymethylene) binder by a nitric acid / organic acid composite catalytic system at 80-120 DEG C; (2) surface activation treatment of the degreased green body: performing vacuum plasma cleaning to remove surface catalyst residues, and switching to H2 / N2 mixed gas to reduce residual impurities; and (3) gradient rapid sintering densification: gradient rapid sintering densification is adopted, three-stage gradient temperature control-pressure control is adopted, and the total sintering time is less than or equal to 3 hours. According to the method, low-temperature catalytic degreasing is adopted, the degreasing time is shortened, the surface of a degreased green body is activated, a traditional acid pickling or secondary degreasing step is avoided, gradient rapid sintering densification is achieved, and the density and performance of the material are improved.

The invention relates to the technical field of plasma cleaning, in particular to a drum type vacuum plasma cleaning machine which comprises a shell, the interior of the shell is a sealed environment, a cleaning cavity is rotatably installed in the shell, and a drum assembly is rotatably installed in the cleaning cavity. The roller assembly comprises a cylinder screen, a second side plate, two supporting rings and a plurality of first side plates. The first side plate and the second side plate rotate along with the drum screen, so that materials roll over when the drum screen rotates, the plasma cleaning uniformity is improved, meanwhile, the materials roll over to impact the drum screen, dust on the side wall of the drum screen is cleaned, and the cleaning efficiency is improved through the continuous switching state of the cleaning cavity. And the rolling frequency and strength of the materials in the drum screen are improved, and the uniformity of plasma cleaning is further improved. The materials are thrown upwards through rotation of the flexible strips, the collision force between the materials and between the materials and the drum screen is increased, and cleaning of dust in the drum screen and dust on the outer surfaces of the materials is further improved.

The invention relates to the technical field of plasma cleaning, and discloses a plasma treatment method for a metal plate after laser etching, which comprises the following steps: cleaning the surface of the metal plate after laser etching, putting the metal plate into plasma cleaning equipment, and carrying out plasma cleaning treatment at preset gas flow and preset radio frequency power; the duration of plasma cleaning treatment is preset as the first duration, cleanliness detection data and surface roughness detection data of the metal plate subjected to plasma cleaning for the first duration are obtained, a cleanliness score is calculated, and whether post-cleaning treatment is carried out or not is determined according to the cleanliness score; and after it is determined that post-cleaning treatment is carried out, after the post-cleaning treatment is finished for a second time length, metal plate treatment is completed. According to the method, the metal plate subjected to laser etching is subjected to plasma cleaning, and the process parameters of plasma cleaning equipment are controlled, so that the plasma is in full contact with the surface of the metal plate and reacts with the surface of the metal plate, and the cleaning purpose is achieved.

The present application relates to the technical field of intelligent predictive maintenance of industrial equipment, in particular to a low-temperature plasma cleaning machine intelligent predictive maintenance method and system; the method comprises the following steps: collecting set power, actual output power, nozzle inlet air pressure, spray gun temperature, control instructions and the time stamp of all data, and establishing a runtime sequence dataset; calculating a discharge path drift index, a jet channel impedance mutation rate index and an energy response lag coefficient based on the runtime sequence dataset; constructing an energy transmission link degradation prediction model, and constructing a multi-level energy link causal structure diagram based on the energy transmission link degradation prediction model, executing a phase consistency link matching determination rule, and generating a degradation phase determination result; determining a low-temperature plasma cleaning machine fault list and a maintenance list. The present application realizes intelligent predictive maintenance and positioning of the energy transmission degradation phase fault of the low-temperature plasma cleaning machine.

The utility model discloses plasma cleaning equipment for an aero-engine, which belongs to the technical field of maintenance and cleaning of aviation equipment, aims at solving the problems that a screen plate in an engine part cleaning box is troublesome to adjust and the cleaning efficiency is influenced in the prior art, and comprises a plasma cleaning box, a guide rail, a cleaning device and a control device, the two guide rails are symmetrically distributed and fixed to the inner bottom wall of the plasma cleaning box, mounting frames are slidably mounted on the inner walls of the two guide rails, and a bottom plate is fixed to the lower ends of the sides, close to each other, of the two mounting frames; parts can be conveniently placed through the placing net plates, sliding of the placing net plates is facilitated through cooperation of the sliding blocks, the limiting rods and the movable through holes, therefore, the distance between the placing net plates can be conveniently adjusted, large parts can be placed, and the placing net plates can be conveniently placed through cooperation of the limiting mechanisms and the placing net plates. And the placement net plate which is moved and adjusted can be conveniently limited, and operation of workers is facilitated.

Disclosed is a method and apparatus configured to perform an in-situ plasma cleaning of an end effector. The method comprises moving the end effector into a process module from a vacuum transfer module attached to the process module, positioning the end effector below a gas distribution plate, flowing a plasma over the gas distribution plate, exposing the end effector to the plasma, and retracting the end effector into the vacuum transfer module.

The invention relates to the technical field of plasma, in particular to a plasma cleaning device capable of being spliced. The plasma generator comprises a main cavity, side plates, an electrode assembly and a high-voltage electric connector, the side plates are connected to the two sides of the main cavity in a sealed mode, the main cavity is formed by splicing a plurality of cavity modules, each cavity module is provided with a discharge area, an exhaust area, a plasma air outlet, an exhaust inlet and a splicing installation position, the discharge areas of the multiple cavity modules are communicated, and the exhaust areas of the multiple cavity modules are communicated with the splicing installation position. The exhaust areas of the plurality of cavity modules are communicated, the discharge areas are isolated from the exhaust areas, the plasma gas outlets are communicated with the discharge areas, the exhaust inlets are communicated with the exhaust areas, an electrode assembly is installed in the discharge area of each cavity module, and the high-voltage electric connectors are connected with the electrode assemblies. And the side plates and the cavity modules are positioned, butted and fixed through the splicing mounting positions. The cleaning heads with different lengths are composed of a modular product and can be spliced and customized according to customer requirements, and the overall transformation cost and the manufacturing cost can be reduced.

The invention discloses a radio frequency plasma cleaning device, which relates to the technical field of plasma cleaning equipment, and comprises a starting system, a vacuum system and a control system, the starting system comprises an outer shell, an airflow regulator, a quartz hollow tube and an inductance driving coil; the outer shell is provided with an inner cavity, the airflow regulator and the quartz hollow tube are arranged in the inner cavity, and the airflow regulator can regulate gas flow; the inductance driving coil is sleeved outside the quartz hollow tube; the vacuum system comprises a vacuum cabin, an objective table and vacuumizing equipment; the objective table is fixed in the vacuum cabin, an extraction opening of vacuumizing equipment is communicated with the interior of the cabin, and a communicating opening, corresponding to the upper portion of the objective table, of the vacuum cabin is communicated with a lower end opening of the quartz hollow tube; the control system comprises a radio frequency power supply which can provide radio frequency energy for the inductance driving coil, the power of the control system is adjustable, and the cleaning gas can be switched into different gases. The device is small in size, light in weight, compact in structure and low in cost.

1. The name of the design product: roller type plasma cleaning device. 2. The use of the design product: roller type plasma cleaning equipment for loading materials to be surface treated and plasma cleaning thereof. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: assembly state perspective view.

The invention belongs to the technical field of variable optical films, discloses a multifunctional composite variable optical film and a preparation method thereof, and aims at solving the problems that an existing variable optical film is single in function, unstable in optical performance, poor in flexibility and bending resistance and low in process precision. The preparation method comprises the following steps: pre-treating the base material: sequentially carrying out plasma cleaning on the PET base material and sputtering the ITO conductive layer, sequentially carrying out ultrasonic cleaning on the glass substrate and preparing the YAG powder enhancement layer; the coating of the functional layer is that the surface of the ITO layer of the PET-ITO composite base material is coated with a PDLC layer and an electrochromic layer, and the surface of the YAG layer of the YAG-glass composite base material is coated with a temperature-sensitive layer; the compounding and curing are as follows: firstly laminating after aligning and compounding, and then carrying out UV segmented curing. The light transmittance of the product can be adjusted by 5-95% in an electric field, and the infrared reflectivity is gt; and after the ITO layer is bent for 1000 times and the bending radius is 5mm, the resistance change rate is less than or equal to 10%, so that the ITO film is suitable for a sunshade film for a vehicle and an intelligent window of a building.

The invention relates to a plasma electrode tip of a modular combined electrode and a plasma cleaning machine, the plasma cleaning machine comprises a high-voltage power supply, a gas control box, the plasma electrode tip and an ozone treatment module, the plasma electrode tip comprises a cavity and an electrode part arranged at the bottom of the cavity, and the ozone treatment module is arranged at the bottom of the cavity. The top of the cavity is provided with a high-voltage wire socket and an air inlet interface, the electrode part comprises a conductive module, an electrode module, a grounding plate and a fixing module, and the electrode module comprises a plurality of electrode blocks. According to the plasma electrode tip, the plurality of electrode blocks are spliced to form the plasma electrode tip, the thin electrode layers are arranged in the electrode blocks, the plurality of electrode blocks are included, and the plurality of electrode blocks are spliced to form the electrode module, so that the thinned electrode tip is convenient to splice, can extend and is convenient to maintain.

The invention relates to the technical field of industrial cleaning, in particular to an annular pulse plasma cleaning device and method for a precise instrument. According to the technical scheme, the plasma cleaning device comprises a high-voltage pulse power supply, a host device, a supporting bracket and an object carrying platform, the high-voltage pulse power supply, the host device, the supporting bracket and the carrying platform are sequentially arranged from top to bottom; the host device comprises an air valve, an outer electrode, a diagnosis port, a cylindrical inner electrode, a conical inner electrode, a solenoid, a top flange, an insulating part, a sealing part and a control computer. High-density compact ring plasma clusters are adopted for pulse type directional cleaning, cleaning uniformity is improved, heat input is greatly reduced due to the instantaneous energy deposition characteristic, damage to heat-sensitive materials is avoided, the modular generator is compact in structure and convenient and fast to maintain, accurate positioning is achieved through cooperation with X-axis and Y-axis guide rails, and the service life of the modular generator is prolonged. The device is suitable for efficient cleaning of complex structures and stubborn pollutants.

The utility model provides a plasma cleaning cavity and cleaning equipment, and relates to the technical field of semiconductor equipment. The plasma cleaning cavity comprises an upper cover, a cavity body, a placement table, a first heating disc, a second heating disc and a heat conduction piece. The cavity is provided with an opening, and the upper cover is connected with the cavity to seal the opening. The placing table is used for bearing a wafer; the placing table is arranged in the cavity. The first heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The second heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The first heating disc and the second heating disc are arranged at intervals. The heat conduction piece is arranged between the first heating disc and the second heating disc. According to the plasma cleaning cavity, the placement table is uniformly heated, and the cleaning quality can be improved.

The present invention discloses a cart-type large-box plasma cleaning device, comprising a main frame and a material cart. The main frame is provided with a vacuum chamber and an electrical chamber. The vacuum chamber has a vacuum cavity with a length, width, and height greater than 1 meter. The inner sidewall of the vacuum cavity is provided with a vacuum port, an electrode feed port, a temperature measuring port, and a working gas port, which is connected to a gas source device via a gas pipeline. The material cart comprises a carrier and a material frame, a limiting track is provided on the upper surface of the base frame, and insulating fixing blocks are provided between each electrode plate and support plate and the material frame. An electrode assembly is provided on the front side of the material frame, and the electrode assembly is electrically connected to an electrode pair that constitutes plasma excitation. An electrode plate is provided below the bottom support plate, and the electrode pair includes at least all the electrode plates. The present invention can be used to simultaneously clean multiple large-area product materials, improving the quality and efficiency of plasma cleaning.

The application provides a method for cleaning a substrate by plasma, which comprises the following steps: providing a substrate to be cleaned and a plasma cleaning device, wherein the device comprises a cleaning cavity, a U-shaped track, a control module and parallel polar plates, the U-shaped track is located between the parallel polar plates; placing two ends of the substrate respectively into U-shaped slots of the U-shaped track, and the substrate is parallel to the parallel polar plates; cleaning the substrate for a preset time with preset parameters, and the control module monitors the voltage difference between the lower polar plate in the parallel polar plates and the substrate in real time, and the control module automatically adjusts the parameters when the voltage difference exceeds the preset pressure difference; after the preset time is over, detecting the surface of the substrate, and if the surface of the substrate is unqualified, repeating the steps of placing the substrate and cleaning the substrate until the surface of the substrate is qualified. The application fixes the substrate by the U-shaped slots, avoids the warping of the substrate during the cleaning process, and improves the reliability and yield of the product in combination with the control module.

The invention belongs to the technical field of double-layer copper-plated conductors, and provides a double-layer copper-plated conductor precisely regulated and controlled automatic electroplating production line system which is characterized in that an inert gas transition cabin with the argon purity not lower than 99.999% and the pressure maintained to be 5-10 kPa is arranged between a first-layer plating tank and a second-layer plating tank, 5-10 nm precise etching is achieved through low-temperature plasma cleaning, and a second-layer plating tank is arranged between the first-layer plating tank and the second-layer plating tank; a roughened grain boundary structure is formed, an EBSD sensor is adopted to collect grain texture direction and size data of a bottom-layer copper coating, a crystal structure analytical model is constructed based on a CNN in combination with a lattice matching database, a crystal nucleus growth induction target is output, and real-time production parameters and parameter threshold ranges corresponding to the induction target are compared; dynamically regulating and controlling production parameters through a PID algorithm; epitaxial growth of the two copper plating layers is achieved, the interface internal stress is remarkably reduced, the bending life of the conductor is prolonged, the structural reliability of the conductor is improved, and the performance requirements of high-end equipment for high-frequency communication, flexible electronics and the like are met.

The invention discloses a method for arranging and growing high-density boron nitride nanotubes. According to the method, a three-stage surface engineering scheme of polishing, grooving and cleaning is combined with high-temperature annealing assistance, so that the boron nitride nanotube film which is arranged and grown in a high-density manner can be obtained. Pollution on the surface of the substrate is removed through electrochemical polishing, the nucleation number of the boron nitride nanotubes is increased, and the purposes of airflow orientation and surface wetting of reactants are achieved in cooperation with micro-nano groove etching and plasma cleaning design. In a high-temperature environment, the arrangement and growth of the high-density boron nitride nanotubes are realized by controlling the magnitude of shearing force generated by the airflow velocity. The boron nitride nanotube arrangement growth process provided by the invention is simple and low in cost, and provides possibility for efficient application of the boron nitride nanotube material in various fields.

The invention relates to the technical field of semiconductor chip manufacturing, and discloses plasma cleaning equipment which comprises two vertical plates, a fixed table, a dust collecting box with an opening in the front side wall, an inferior product collecting box, a qualified product collecting box, a driving transportation assembly, a cleaning mechanism, a dust removal mechanism and a visual inspection assembly. A plurality of rotating shafts are rotationally connected between the two vertical plates at equal intervals, the multiple rotating shafts are jointly sleeved with a conveying belt, the visual detection assembly is matched with the inferior product collecting box and the qualified product collecting box, and automatic quality detection and sorting of cleaned products can be achieved. A visual detection head can quickly and accurately identify unqualified products, a second electric telescopic rod drives a material pushing plate to push the inferior products to an inferior product collecting box, qualified products are conveyed to the end along with a conveying belt and fall into a qualified product collecting box, manual intervention is not needed, the labor cost is reduced, the detection and sorting efficiency and accuracy are greatly improved, and the product quality is improved. The large-scale production requirements are met.

The invention provides an RPS source microwave plasma ionization chamber structure and a plasma cleaning machine, the RPS source microwave plasma ionization chamber structure comprises an ionization chamber, the ionization chamber is internally provided with a hollow ionization chamber, and the top of the ionization chamber is provided with a first air inlet hole; the dispersing head is connected with the first air inlet hole, a plurality of annular guide holes are formed in the end face part, opposite to the first air inlet hole, of the dispersing head, and the annular guide holes are arranged in a wavy outward radiation mode with the hole center of the first air inlet hole as the original point and used for dispersing air flow entering the ionization cavity through the first air inlet hole; according to the invention, the dispersion head with a plurality of annular guide holes arranged in a wavy outward radiation manner is mounted in the ionization cavity, so that microwaves and process gas can be dispersed according to regions and enter the ionization cavity through the dispersion head, and the introduced gas flow can stably and uniformly enter the interior of the cavity; and the microwave energy can be quickly and intensively focused on a set ionization area to form a high-concentration gas atmosphere, so that the ionization efficiency of the gas is effectively improved, and the cleaning with high plasma density is further ensured.

The application provides a bonding device and a bonding method. The bonding method comprises the following steps: providing a first carrier film and a second carrier film, the first carrier film carrying a plurality of chips, and the second carrier film carrying a wafer; covering the first carrier film and the second carrier film with a first shielding cover and a second shielding cover respectively, and the first shielding cover exposing part of the chips, and the second shielding cover exposing part of the surface of the wafer; performing a plasma cleaning process to activate part of the chips exposed by the first shielding cover and part of the surface of the wafer exposed by the second shielding cover; and bonding the activated part of the chips on the activated part of the surface of the wafer. The technical scheme of the application can reduce the probability of bonding failure.

The utility model discloses a kind of plasma cleaning plate, including bottom plate, bottom plate is provided with cathode, the surface of bottom plate is opened with at least one cathode groove, cathode groove is U shape, by the cathode groove design is U-shaped curved surface, the contact area of cathode and anode is significantly increased 30%-50%, current density distribution is optimized, make ionization area more concentrated and uniform, greatly improve the energy density of plasma arc and atmosphere dissociation degree, and, plasma can be maintained in lower temperature state in generation and effect process, unnecessary heat loss is reduced, to realize the effect of energy saving, at least one row of array distribution's plasma cleaning hole is equipped in cathode groove, and staggered distribution design is adopted, so that plasma beam is ejected at different angles and positions, form interlaced covering jet field, not only significantly improve cleaning efficiency, make cleaning process more efficient, can also ensure that cleaning has no dead angle, more comprehensive.

The invention discloses a micro-nano device photoetching process based on surface energy repair and a micro-nano device, and relates to the technical field of photoetching. The process provided by the invention comprises the following steps: carrying out plasma cleaning on a substrate, immersing the substrate subjected to plasma cleaning into an organic cleaning solvent, and removing an unstable metamorphic layer and pollutants on the surface of the substrate by adopting at least one of soaking, stirring and ultrasonic treatment, then, the cleaned substrate is adopted to carry out subsequent photoetching and micro-nano machining processes; the step of organic solvent cleaning is added after substrate plasma cleaning, an unstable metamorphic layer is disintegrated and other impurities are removed through permeation and slight dissolution effects of an organic solvent on the surface of the substrate, so that the surface of the substrate is recovered to a smooth and stable state; therefore, the defects of edge collapse, side wall roughness and the like of the photoresist pattern in the photoetching process are remarkably reduced, and the photoetching morphology precision and the production yield of the micro-nano device are effectively improved.