357 results about "Plasma cleaning" patented technology

The invention discloses a circuit board etching device and method, and the method comprises the steps: S1, providing a substrate, forming a laser activation micro-channel on the surface of the substrate, carrying out the plasma cleaning of the substrate, and pressing a gradient copper foil layer; s2, based on the thickness distribution data of the gradient copper foil layer, establishing an etching parameter prediction model, and generating a pressure-temperature dynamic regulation and control curve; s3, preparing a first-stage etching solution, carrying out spraying treatment, and etching the surface layer of the gradient copper foil layer under the assistance of ultrasonic waves to form a porous layer; s4, switching to a second-stage etching solution to directionally etch the porous layer of the gradient copper foil layer to a target residual thickness; s5, performing surface leveling treatment on the etched circuit board, and verifying the etching precision based on a high-frequency impedance test result; gradient copper layer dynamic parameter regulation and control are combined with a two-stage etching process, high-frequency impedance verification and surface leveling have a synergistic effect, signal transmission loss can be reduced, and the method is suitable for manufacturing high-frequency and high-speed circuit boards.

The invention discloses a large-size power chip no-pressure low-void-ratio welding method, which comprises the following steps of: determining proper thickness and size of a soldering lug according to the size of a chip and the material of a substrate; then cutting and carrying out plasma cleaning on the soldering lug to remove dirt on the surface of the soldering lug; welding sample assembly is completed through an automatic chip mounter; setting a vacuum welding curve according to the material characteristics of the welding sheet, determining key welding parameters such as formic acid pressure, formic acid reduction temperature, formic acid reduction time, peak temperature, peak temperature holding time, furnace chamber pressure and holding time and the like, and completing chip welding according to the set curve; and finally, measuring the internal void ratio of the welding seam by adopting an X-ray detector. On the basis of the vacuum eutectic welding technology, under the non-pressure welding condition, the air holes in the welding flux layer are discharged by regulating and controlling the environment pressure change in the welding process, and low-void-ratio welding of the large-size chip is achieved.

The invention discloses an HfZrO4 memristor and a manufacturing method, relates to the technical field of memristors, can realize bidirectional resistance adjustment in a homopolar voltage region without the combination of a plurality of memristor units, and is simple in structure and convenient to manufacture. The HfZrO4 memristor comprises a Pt top electrode, an HfZrO4 resistive layer and a Pt bottom electrode which are sequentially arranged from top to bottom, the Pt bottom electrode and the Pt top electrode are conductive and then form a loop with the HfZrO4 resistive layer, and the resistance of the loop is changed by a voltage signal applied to the HfZrO4 resistive layer; the manufacturing method comprises the following steps: cutting a silicon wafer with a silicon oxide layer on the surface as a substrate, and taking the silicon oxide layer as an insulating layer; after the insulating layer is cleaned, a layer of metal Pt serves as a Pt bottom electrode through magnetron sputtering; cleaning and activating the Pt bottom electrode by adopting a plasma cleaning machine; multiple atomic layer deposition is carried out on the cleaned and activated bottom electrode according to the sequence of Hf-> H2O-> Zr-> H2O so as to generate an HfZrO4 resistive layer; and sputtering a plurality of metal Pt on the HfZrO4 resistive layer through magnetron sputtering to serve as a Pt top electrode so as to form the HfZrO4 memristor.

The invention discloses a novel corrosion process applying a plasma cleaning technology and a four-stage attenuation current hole-forming technology, and belongs to the technical field of corrosion foil manufacturing. Aiming at non-uniform surface activity of the electronic aluminum foil, special cleaning treatment is added in the hole forming process, active points on the surface of the aluminum foil are increased, the number of invalid holes and short holes is reduced through four times of attenuation current hole forming, and the corrosion foil with higher tunnel hole diameter consistency is prepared, so that the consistency of corrosion hole forming is improved; the uniformity of the hole diameter of the etched aluminum foil is increased, so that the product capacity is improved.

The utility model provides a plasma cleaning device, and belongs to the technical field of semiconductor production equipment, the plasma cleaning device comprises a cavity, and a chamber is arranged in the cavity; the cover plate covers the upper end of the cavity; the remote plasma source is connected to the central position of the protruding part; the gas blocking part is arranged in the conical cavity; the first gas homogenizing plate is arranged below the gas blocking part; the second gas uniformizing plate is arranged below the first gas uniformizing plate; and a substrate table. The cover plate and the gas blocking part can uniformly disperse plasma gas fed by a remote plasma source into the cavity, then the plasma gas is further homogenized through the first gas homogenizing plate to ensure the gas uniformity of a substrate area, and meanwhile, the vacuum mechanism is generally connected to the bottom of the cavity, so that the gas is downwards pumped through the second gas homogenizing plate during gas pumping, and the gas uniformity of the substrate area is ensured. The gas uniformity in the chamber can be effectively ensured, so that the etching uniformity and the etching rate are improved.

The invention discloses a plasma cleaning device and method. The plasma cleaning device comprises a base, a workpiece carrying plate and a protective cover, a positive electrode plate is arranged on the upper end face of the base, a ceramic plate is arranged on the upper end face of the positive electrode plate, a positioning piece is arranged on the upper end face of the ceramic plate, and a vacuumizing pipeline is arranged on the base; the workpiece carrier plate is provided with a plurality of positioning grooves for loading substrates to be cleaned, and the distance between the workpiece carrier plate and the ceramic plate is smaller than or equal to 0.05 mm; the protective cover is connected with a lifting mechanism and provided with a negative electrode plate, the negative electrode plate is located above the positive electrode plate, and the positive electrode plate and the negative electrode plate are located in the closed space. A ceramic plate is arranged on the positive electrode plate for covering, and a discharge mode is changed into a dielectric discharge mode, so that a golden finger of the substrate is prevented from being polluted by a tin element; according to the method, oxygen is input firstly to clean the surface of the substrate in a high-efficiency chemical reaction mode, then argon is introduced, the surface of the substrate is physically impacted, and surface oxides are thoroughly removed, so that the cleaning effect is better.

The utility model discloses a plasma cleaning machine material box which comprises a first mounting plate and a second mounting plate, the corresponding ends of the first mounting plate and the second mounting plate are jointly provided with a plurality of placing devices, and the upper portion and the lower portion of the left end of the first mounting plate and the upper portion and the lower portion of the right end of the second mounting plate are each provided with a supporting plate. And clamping devices are mounted at the ends, corresponding to each other in pairs, of the four supporting plates. According to the material box of the plasma cleaning machine, the material boxes on the containing device are clamped in the clamping grooves in the supporting frame through the clamping blocks at the lower ends of the material boxes, so that the material boxes are clamped between the first mounting plate and the second mounting plate, the multiple material boxes are arranged, different kinds of objects can be stored in a classified mode according to cleaning requirements, and the cleaning efficiency is improved. According to the device, the multiple articles can be cleaned at a time, meanwhile, after the articles are stored in a classified mode, follow-up classified arrangement of the articles is facilitated, and therefore the practicability of the device is improved.

The invention discloses a high-voltage cable surface defect plasma cleaning method and system, and relates to the technical field of plasma cleaning, and the method comprises the steps: recognizing the surface defect type of a to-be-cleaned high-voltage cable; after the high-voltage cable to be cleaned is fixed in the cleaning work space, a first simulation cleaning control combination and a second simulation cleaning control combination are configured; regulating and controlling by using the regional temperature field of the cleaning working space, and dynamically regulating the contact angle resolution; and meanwhile, the cleaning effect is fed back in real time in combination with a plasma density sensor, and when it is detected that local cleaning is not thorough, a dynamic complementary scanning protocol is triggered. The technical problem that in the prior art, the cleaning effect is poor due to the fact that the cleaning precision of the surface defects of the high-voltage cable is insufficient and local cleaning is not thorough is solved, and the technical effects that precise cleaning of the surface defects of the high-voltage cable and dynamic repair sweeping of the local incomplete area are achieved, and the cleaning quality is improved are achieved.

The utility model discloses a spray head for a wide plasma cleaning machine. The spray head comprises a cleaning head body, the cleaning head body comprises a left clamping piece, a middle clamping piece and a right clamping piece which are arranged side by side and attached to one another, and a plurality of semicircular air outlets are formed in the two sides of the bottom of the middle clamping piece and the sides, close to the middle clamping piece, of the bottoms of the left clamping piece and the right clamping piece in the first direction. The multiple semicircular air outlet holes are located in the same position in the height direction, and when the semicircular air outlet holes are attached to each other, the semicircular air outlet holes in every two adjacent clamping pieces can be combined into a complete circular air outlet hole. According to the plasma cleaning device, gas leakage can be avoided in the plasma cleaning process, the product cleaning height is increased, and the cleaning effect is guaranteed.

The invention discloses a preparation method of a fuel cell metal bipolar plate composite coating. The preparation method comprises the following steps: carrying out pretreatment and plasma cleaning on a substrate; sequentially depositing a metal base layer and a transition layer on the surface of the substrate; the amorphous carbon surface layer is deposited on the surface of the transition layer through multi-arc ion plating, the multi-arc ion plating technology is used, the high-density and high-strength amorphous carbon surface layer is formed on the surface of the metal bipolar plate, the corrosion resistance of the bipolar plate is remarkably improved, the machining parameters of multi-arc ion plating are accurately controlled, and the corrosion resistance of the bipolar plate is improved. A carbon surface layer with fine grains and few defects can be prepared on the surface of the bipolar plate, the corrosion current density is effectively reduced, and the service life of a fuel cell is prolonged.

The utility model provides a plasma cleaning machine which comprises a cleaning machine body, a support is fixed to an inner cavity of the cleaning machine body, two oppositely-arranged rollers are arranged in the support and used for containing particle powder to be cleaned, and a control assembly for controlling the two rollers to rotate so as to improve the cleaning efficiency is arranged on the support. Each roller is correspondingly provided with an electrode assembly, each electrode assembly penetrates into the inner cavity of the cleaning machine body and enters the corresponding roller, the electrode assemblies receive voltage conducted by the plasma generator, gas in the inner cavities of the rollers is excited to be in a plasma state, and the plasma cleaning machine and the electrode assemblies receive the voltage conducted by the plasma generator. Gas in the inner cavities of the rollers is excited to be in a plasma state, vacuum plasma cleaning is conducted on particle powder, the particle powder is driven to turn over through the control assembly, the possibility that plasma cleaning is affected by mutual accumulation of the particle powder is reduced, the plasma cleaning quality is improved, and the particle powder cleaning efficiency is improved by arranging the two rollers.

The invention belongs to the technical field of cleaning equipment, and discloses plasma cleaning equipment which comprises a vacuum cleaning device, the vacuum cleaning device comprises a vacuum cleaning cavity, the vacuum cleaning cavity is provided with a cleaning cavity used for cleaning workpieces, the vacuum cleaning cavity comprises a base assembly and a cover assembly, and the cover assembly can vertically ascend and descend relative to the base assembly; the cleaning cavity is closed or opened; and the material moving device is arranged on the side of the vacuum cleaning cavity and comprises a horizontal material pushing mechanism, and when the cleaning cavity is opened, the horizontal material pushing mechanism can stretch into the cleaning cavity in the horizontal direction so as to push one carrier to move to the cleaning station from the feeding station and push the other carrier on the cleaning station to move to the discharging station at the same time. According to the plasma cleaning equipment, the automation degree and the material moving efficiency can be improved, dust generated in the cleaning cavity is greatly reduced, and the cleaning effect is better.

The utility model discloses a cooling type plasma cleaning machine nozzle which comprises a base, a nozzle body and a nozzle body. The cover body is arranged above the base; the electrode plate is arranged in the mounting cavity, and a cooling medium circulating cavity is formed in the electrode plate; the first electrode connecting pipe penetrates through the cover body and penetrates into the electrode plate, and the first electrode connecting pipe is communicated with the cooling medium circulating cavity; and the second electrode connecting pipe penetrates through the cover body and penetrates into the electrode plate, and the second electrode connecting pipe is communicated with the cooling medium circulating cavity. According to the utility model, the cooling medium circulating cavity is arranged in the electrode plate, so that the cooling effect on the electrode plate is realized, the membrane deformation caused by over-high temperature when the membrane is cleaned by the spray head is prevented, and the use effect of the electrode plate is ensured; and gas circulates in the mounting cavity, so that the spraying and cleaning effects of the spray head of the plasma cleaning machine are ensured, and the cooling effect on the interior of the spray head is further improved.

The invention belongs to the technical field of powder metallurgy, and particularly relates to a high-fluidity MIM metal feed and a forming process thereof.The high-fluidity MIM metal feed is composed of the following materials: metal powder: spherical metal powder (a titanium alloy TC4 material), polycaprolactone and graphene nanosheets; wherein the volume ratios are 68-72 vol%, 0.5-2 wt% (based on the mass of the metal powder) and 0.1-0.5 wt% (based on the mass of the metal powder) respectively; a powder oxide layer is removed through vacuum plasma cleaning (300-500 W, argon atmosphere), a metal core-PCL / graphene shell structure is prepared in combination with ultrasonic-assisted in-situ polymerization, lubrication and adhesion enhancement are synchronously achieved, the powder oxygen content is controlled to be smaller than 500 ppm, and sintering oxidation defects are reduced.

The invention relates to the technical field of intelligent power module machining, in particular to an intelligent power module aluminum-based copper-clad plate machining method which comprises the steps that cutting, etching, AOI detection, solder mask, CCD drilling, ET testing, nickel and gold immersion and V-CUT cutting treatment are conducted on a target aluminum-based copper-clad plate; the aluminum-based copper-clad plate subjected to V-CUT cutting is subjected to primary gold plate cleaning, and during gold plate cleaning, atmosphere plasma cleaning comprises cleaning of the aluminum-based copper-clad plate through mixed gas of argon and oxygen; the aluminum-based copper-clad plate subjected to primary gold plate cleaning is subjected to pressure resistance testing and finished product plate grinding, and secondary gold plate cleaning is carried out; and performing FQC inspection on the aluminum-based copper-clad plate subjected to secondary gold plate cleaning to finish processing. According to the invention, scraps and other dirt remaining on the surface can be effectively cleaned, the pollution problem of the power module in the production process is solved, the reliability of the power module is improved, and the packaging loss is reduced.

The application relates to the technical field of plasma cleaning machines, and discloses a plasma cleaning machine for semiconductor processing, which comprises a main body assembly, a main machine, a connecting sleeve fixed at the bottom of the main machine, an insulating sleeve arranged at the bottom of the connecting sleeve, an inner sleeve arranged outside the insulating sleeve, an outer sleeve arranged outside the inner sleeve, a spray head arranged at the bottom of the outer sleeve, a fixing assembly arranged in the outer sleeve, an extrusion ring fixed to the inner wall of the outer sleeve, an extrusion column arranged at the bottom of the inner sleeve, a mounting sleeve fixed in the outer sleeve, a clamping block arranged in the mounting sleeve, and a fixing sleeve fixed at the bottom of the main machine. The application has the beneficial effect that: through the arrangement of the fixing assembly, the dismounting or fixing of multiple components can be completed at one time when the gun head is dismounted and fixed, so that the maintenance time can be reduced, and the situation that a certain component is missed to be fixed can be avoided.

The invention relates to pre-sputter plasma cleaning. A method of forming an integrated circuit includes forming a first copper feature (602, 604) in a first metal layer over a semiconductor substrate; and forming a dielectric layer (606) over the first copper feature. The method also includes forming an opening (608, 610) in the dielectric layer that exposes the copper feature; and exposing the first copper feature to a hydrogen plasma to chemically reduce a copper compound resulting from forming the opening (612). The hydrogen plasma is generated with an RF bias power (Wb) and an RF source power (Wa), where Wblt; and-0.938 Wa + 210.57, and the total weight of the The method further includes forming a second copper feature within the opening that is electrically connected to the first copper feature (614).

The present invention proposes a drum-type vacuum plasma cleaning equipment, comprising an outer sleeve and an inner drum arranged in the outer sleeve and rotatably connected to the outer sleeve. The outer sleeve is provided with an exhaust pipe connected to a vacuum pumping device and an electrode rod. The electrode rod passes through the outer sleeve and enters the inner drum. A gas flow groove for allowing process gas to enter the inner drum is provided in the electrode rod. The outer sleeve is provided with a driving assembly for driving the inner drum to rotate. The inner cavity of the inner drum is provided with a breaking up assembly for breaking up compacted materials. The drum-type vacuum plasma cleaning equipment breaks up compacted materials through the breaking up assembly, thereby reducing the possibility of poor cleaning effect of the compacted materials.

The invention discloses plasma cleaning equipment, and relates to the technical field of plasmas, the plasma cleaning equipment comprises a base, a circulating feeding device, an automatic loading and unloading device and a transition conveying device, the circulating feeding device comprises a feeding frame arranged on the base in a sliding mode and a supporting plate movably arranged on the feeding frame, and the supporting plate is provided with a material box for containing material pieces; the circulating feeding device can conduct circulating feeding in cooperation with a pushing and feeding mechanism in the automatic loading and unloading device to push material pieces to a conveying belt, then the conveying belt is matched with a pushing and discharging mechanism to push the material pieces to a bearing plate in the transition conveying device, and the bearing plate drives the material pieces to enter a cleaning cavity of the cleaning device to be cleaned. According to the technical scheme, the feeding efficiency is improved, meanwhile, automatic and efficient discharging is achieved, the feeding and discharging speed can be matched with the cleaning speed of the cleaning device, and therefore the overall working efficiency of the equipment is improved.

The invention discloses a low-temperature catalytic degreasing and rapid densifying process of an MIM (metal injection molding) forming part, which comprises the following steps: (1) low-temperature catalytic degreasing: in a nitrogen atmosphere, catalytically decomposing a POM (polyoxymethylene) binder by a nitric acid / organic acid composite catalytic system at 80-120 DEG C; (2) surface activation treatment of the degreased green body: performing vacuum plasma cleaning to remove surface catalyst residues, and switching to H2 / N2 mixed gas to reduce residual impurities; and (3) gradient rapid sintering densification: gradient rapid sintering densification is adopted, three-stage gradient temperature control-pressure control is adopted, and the total sintering time is less than or equal to 3 hours. According to the method, low-temperature catalytic degreasing is adopted, the degreasing time is shortened, the surface of a degreased green body is activated, a traditional acid pickling or secondary degreasing step is avoided, gradient rapid sintering densification is achieved, and the density and performance of the material are improved.

The invention relates to the technical field of plasma cleaning, in particular to a drum type vacuum plasma cleaning machine which comprises a shell, the interior of the shell is a sealed environment, a cleaning cavity is rotatably installed in the shell, and a drum assembly is rotatably installed in the cleaning cavity. The roller assembly comprises a cylinder screen, a second side plate, two supporting rings and a plurality of first side plates. The first side plate and the second side plate rotate along with the drum screen, so that materials roll over when the drum screen rotates, the plasma cleaning uniformity is improved, meanwhile, the materials roll over to impact the drum screen, dust on the side wall of the drum screen is cleaned, and the cleaning efficiency is improved through the continuous switching state of the cleaning cavity. And the rolling frequency and strength of the materials in the drum screen are improved, and the uniformity of plasma cleaning is further improved. The materials are thrown upwards through rotation of the flexible strips, the collision force between the materials and between the materials and the drum screen is increased, and cleaning of dust in the drum screen and dust on the outer surfaces of the materials is further improved.

The invention relates to the technical field of plasma cleaning, and discloses a plasma treatment method for a metal plate after laser etching, which comprises the following steps: cleaning the surface of the metal plate after laser etching, putting the metal plate into plasma cleaning equipment, and carrying out plasma cleaning treatment at preset gas flow and preset radio frequency power; the duration of plasma cleaning treatment is preset as the first duration, cleanliness detection data and surface roughness detection data of the metal plate subjected to plasma cleaning for the first duration are obtained, a cleanliness score is calculated, and whether post-cleaning treatment is carried out or not is determined according to the cleanliness score; and after it is determined that post-cleaning treatment is carried out, after the post-cleaning treatment is finished for a second time length, metal plate treatment is completed. According to the method, the metal plate subjected to laser etching is subjected to plasma cleaning, and the process parameters of plasma cleaning equipment are controlled, so that the plasma is in full contact with the surface of the metal plate and reacts with the surface of the metal plate, and the cleaning purpose is achieved.

The present application relates to the technical field of intelligent predictive maintenance of industrial equipment, in particular to a low-temperature plasma cleaning machine intelligent predictive maintenance method and system; the method comprises the following steps: collecting set power, actual output power, nozzle inlet air pressure, spray gun temperature, control instructions and the time stamp of all data, and establishing a runtime sequence dataset; calculating a discharge path drift index, a jet channel impedance mutation rate index and an energy response lag coefficient based on the runtime sequence dataset; constructing an energy transmission link degradation prediction model, and constructing a multi-level energy link causal structure diagram based on the energy transmission link degradation prediction model, executing a phase consistency link matching determination rule, and generating a degradation phase determination result; determining a low-temperature plasma cleaning machine fault list and a maintenance list. The present application realizes intelligent predictive maintenance and positioning of the energy transmission degradation phase fault of the low-temperature plasma cleaning machine.

The utility model provides a carrier frame for plasma cleaning, which relates to an accessory of a plasma cleaning machine and comprises a support body which is a telescopic rod or a non-telescopic rod; the clamping parts are arranged in the axial direction of the supporting main body, the distance between the two clamping parts is variable, each clamping part comprises a clamping arm, the clamping arms are arranged in the circumferential direction of the supporting main body, and the clamping arms of the two clamping parts are oppositely used for clamping a material. The material is fully exposed in the plasma environment, all the faces of the material can be fully cleaned in the plasma cleaning process, cleaning dead corners are avoided, meanwhile, the distance between the two clamping parts is variable, and materials of different specifications can be better matched for clamping.

The utility model discloses plasma cleaning equipment for an aero-engine, which belongs to the technical field of maintenance and cleaning of aviation equipment, aims at solving the problems that a screen plate in an engine part cleaning box is troublesome to adjust and the cleaning efficiency is influenced in the prior art, and comprises a plasma cleaning box, a guide rail, a cleaning device and a control device, the two guide rails are symmetrically distributed and fixed to the inner bottom wall of the plasma cleaning box, mounting frames are slidably mounted on the inner walls of the two guide rails, and a bottom plate is fixed to the lower ends of the sides, close to each other, of the two mounting frames; parts can be conveniently placed through the placing net plates, sliding of the placing net plates is facilitated through cooperation of the sliding blocks, the limiting rods and the movable through holes, therefore, the distance between the placing net plates can be conveniently adjusted, large parts can be placed, and the placing net plates can be conveniently placed through cooperation of the limiting mechanisms and the placing net plates. And the placement net plate which is moved and adjusted can be conveniently limited, and operation of workers is facilitated.

Disclosed is a method and apparatus configured to perform an in-situ plasma cleaning of an end effector. The method comprises moving the end effector into a process module from a vacuum transfer module attached to the process module, positioning the end effector below a gas distribution plate, flowing a plasma over the gas distribution plate, exposing the end effector to the plasma, and retracting the end effector into the vacuum transfer module.

The invention discloses plasma cleaning equipment which is provided with a feeding station for feeding corresponding workpieces, a discharging station for discharging corresponding workpieces and a cleaning station provided with plasma nozzles, the cleaning equipment comprises at least two conveying mechanisms, one end of each conveying mechanism corresponds to the feeding station, and the other end of each conveying mechanism corresponds to the discharging station. The conveying mechanism passes through the cleaning station; the grabbing mechanism is arranged on the conveying mechanism, reciprocates between the feeding station and the discharging station along with the conveying mechanism and is used for grabbing workpieces. The cleaning station is provided with a movable support capable of translating, and the movable support stretches across the conveying mechanisms and is used for being connected with the plasma spray heads and driving the plasma spray heads to translate in the mode of being perpendicular to the conveying mechanisms. The problems that according to an existing cleaning mode, residual dirt is cleaned manually, manual cleaning is not thorough, meanwhile, dust is likely to be contaminated in the carrying process, and secondary pollution is caused are solved.

The invention relates to the technical field of plasma, in particular to a plasma cleaning device capable of being spliced. The plasma generator comprises a main cavity, side plates, an electrode assembly and a high-voltage electric connector, the side plates are connected to the two sides of the main cavity in a sealed mode, the main cavity is formed by splicing a plurality of cavity modules, each cavity module is provided with a discharge area, an exhaust area, a plasma air outlet, an exhaust inlet and a splicing installation position, the discharge areas of the multiple cavity modules are communicated, and the exhaust areas of the multiple cavity modules are communicated with the splicing installation position. The exhaust areas of the plurality of cavity modules are communicated, the discharge areas are isolated from the exhaust areas, the plasma gas outlets are communicated with the discharge areas, the exhaust inlets are communicated with the exhaust areas, an electrode assembly is installed in the discharge area of each cavity module, and the high-voltage electric connectors are connected with the electrode assemblies. And the side plates and the cavity modules are positioned, butted and fixed through the splicing mounting positions. The cleaning heads with different lengths are composed of a modular product and can be spliced and customized according to customer requirements, and the overall transformation cost and the manufacturing cost can be reduced.

According to the invention there is provided a method of treating a component of a medicament dispenser device, in which the component is an aluminium can having an interior comprising an interior surface that comes into contact with a medicament during storage or use of the device, the method comprising the steps of: positioning the aluminium can in a chamber; inserting an electrode into the interior of the aluminium can; performing a plasma cleaning step in which a gaseous atmosphere consisting essentially of oxygen and, optionally, at least one fluorocarbon is introduced into the chamber and a cleaning plasma is generated in the gaseous atmosphere using the electrode so as to clean the aluminium can, the interior surface of the chamber and the electrode; optionally coating the interior surface of the aluminium can with a coating; and depositing a fluorocarbon polymer layer onto the interior surface of the aluminium can or, if present, the coating by plasma polymerisation.

The invention discloses a radio frequency plasma cleaning device, which relates to the technical field of plasma cleaning equipment, and comprises a starting system, a vacuum system and a control system, the starting system comprises an outer shell, an airflow regulator, a quartz hollow tube and an inductance driving coil; the outer shell is provided with an inner cavity, the airflow regulator and the quartz hollow tube are arranged in the inner cavity, and the airflow regulator can regulate gas flow; the inductance driving coil is sleeved outside the quartz hollow tube; the vacuum system comprises a vacuum cabin, an objective table and vacuumizing equipment; the objective table is fixed in the vacuum cabin, an extraction opening of vacuumizing equipment is communicated with the interior of the cabin, and a communicating opening, corresponding to the upper portion of the objective table, of the vacuum cabin is communicated with a lower end opening of the quartz hollow tube; the control system comprises a radio frequency power supply which can provide radio frequency energy for the inductance driving coil, the power of the control system is adjustable, and the cleaning gas can be switched into different gases. The device is small in size, light in weight, compact in structure and low in cost.