11117 results about "Chemical vapor deposition" patented technology

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common layer-formation technique, known as chemical-vapor deposition (CVD), produces uneven layers and covers vertical surfaces poorly. An emergent technique, atomic-layer deposition, overcomes these shortcomings, but has others, such as slow deposition rates and longer than desirable cycle times, particularly as applied to deposition of aluminum oxide. Accordingly, the inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary system includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.

Disclosed therein is a method of chemical vapor deposition (CVD) with a showerhead through which a source material gas comprising a reactive gas of at least one kind and a purge gas is injected over a substrate to deposit a film on the substrate, including the steps of: disposing the showerhead in such a way that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a source material gas into the showerhead, wherein reactive gases of different kinds are respectively injected into compartments formed inside the showerhead in such a way that each compartment of the showerhead is filled with the reactive gas of only one kind and a purge gas of the source material gas is supplied into another compartment formed inside the showerhead; and discharging the reactive gas and the purge gas respectively through a large number of reactive gas outlets and a large number of purge gas outlets formed on the bottom surface of the showerhead, the purge gas outlets being more in number than the reactive gas outlets.

This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.

Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and contacting active species generated in the plasma with the inner surface of the chamber, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. Also provided is a method of etching a layer on a silicon wafer. The method involves the steps of: (a) introducing a silicon wafer into a processing chamber, the silicon wafer comprising a layer to be etched; and (b) forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound. Active species generated in the plasma are contacted with the silicon wafer, thereby etching the layer, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. The chemistries in accordance with the invention provide environmentally benign alternatives to the conventionally used global-warming chemistries for chamber cleaning and semiconductor etching processes.

Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.