569results about "Group 4/14 organic compounds without C-metal linkages" patented technology

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Disclosed are olefin polymerization methods comprising the use of the following compounds:wherein M is a metal atom, R1-R8 are univalent radicals, X1 and X2 are univalent ligands, X3 is a divalent ligand, and (RnY-T) is an optional donor or non-donor group. The relatively stable and simply synthesized pre-catalyst is activated by a co-catalyst under mild reaction conditions, producing exceptionally reactive polymerization of a wide variety of alpha-olefin monomers, and forming a variety of poly(alpha-olefin) products, having high molecular weight and low molecular weight distribution (PDIs close to 1). Living polymerization is performed at or above room temperature, along with achieving block co-polymerization of alpha-olefin monomers at room temperature, and producing polymers and oligomers having a wide range of molecular weights. The catalyst formed during reaction remains "alive' for as long as 31 hours, for producing a polymer with a molecular weight as high as 450,000 grams / mole.

Metal complexes comprising certain polydentate heteroatom containing ligands, catalysts, and coordination polymerization processes employing the same are suitably employed to prepare polymers having desirable physical properties.

An active non-metallocene pre-catalyst featuring a diamine diphenolate complex and a corresponding method for catalytic polymerization, in general, and, tactic catalytic polymerization, in particular, of alpha-olefin monomers using the disclosed pre-catalyst. General formulas of the non-metallocene diamine diphenolate pre-catalyst are [{OR<HIL><5< / SP><PDAT>R<HIL><6< / SP><PDAT>R<HIL><7< / SP><PDAT>R<HIL><8< / SP><PDAT>(C<HIL><PDAT>6< / SB><PDAT>)<HIL><1< / SP><PDAT>(CHR<HIL><3< / SP><PDAT>)NR<HIL><1< / SP><PDAT>YNR<HIL><2< / SP><PDAT>(CHR<HIL><4< / SP><PDAT>)(C<HIL><PDAT>6< / SB><PDAT>)<HIL><2< / SP><PDAT>R<HIL><9< / SP><PDAT>R<HIL><10< / SP><PDAT>R<HIL><11< / SP><PDAT>R<HIL><12< / SP><PDAT>O}MX<HIL><1< / SP><PDAT>X<HIL><2< / SP><PDAT>] and [{OR<HIL><5< / SP><PDAT>R<HIL><6< / SP><PDAT>R<HIL><7< / SP><PDAT>R<HIL><8< / SP><PDAT>(C<HIL><PDAT>6< / SB><PDAT>)<HIL><1< / SP><PDAT>(CHR<HIL><3< / SP><PDAT>)NR<HIL><1< / SP><PDAT>YNR<HIL><2< / SP><PDAT>(CHR<HIL><4< / SP><PDAT>)(C<HIL><PDAT>6< / SB><PDAT>)<HIL><2< / SP><PDAT>R<HIL><9< / SP><PDAT>R<HIL><10< / SP><PDAT>R<HIL><11< / SP><PDAT>R<HIL><12< / SP><PDAT>O}MX<HIL><3< / SP><PDAT>], where M is a metal atom covalently bonded to each oxygen atom, O, and, bonded to each nitrogen atom, N, with varying degrees of covalency and coordination; X<HIL><1 < / SP><PDAT>and X<HIL><2 < / SP><PDAT>are each a univalent anionic ligand covalently bonded to the metal atom; X<HIL><3 < / SP><PDAT>is a single univalent or a divalent anionic ligand covalently bonded to the metal atom; R<HIL><1 < / SP><PDAT>and R<HIL><2 < / SP><PDAT>are each a univalent radical covalently bonded to a different one of the two nitrogen atoms; R<HIL><3 < / SP><PDAT>is a univalent radical covalently bonded to the carbon atom of the -CHR<HIL><3< / SP><PDAT>- of the (C<HIL><PDAT>6< / SB><PDAT>)<HIL><1< / SP><PDAT>-CHR<HIL><3< / SP><PDAT>-N- bridging unit; R<HIL><4 < / SP><PDAT>is a univalent radical covalently bonded to the carbon atom of the -CHR<HIL><4< / SP><PDAT>- of the -N-CHR<HIL><4< / SP><PDAT>-(C<HIL><PDAT>6< / SB><PDAT>)<HIL><2 < / SP><PDAT>bridging unit; R<HIL><5 < / SP><PDAT>through R<HIL><8 < / SP><PDAT>are each a univalent radical covalently bonded to a different carbon atom in the first aromatic group, (C<HIL><PDAT>6< / SB><PDAT>)<HIL><1< / SP><PDAT>; R<HIL><9 < / SP><PDAT>through R<HIL><12 < / SP><PDAT>are each a univalent radical covalently bonded to a different carbon atom in the second aromatic group, (C<HIL><PDAT>6< / SB><PD