The present invention is a compound for forming a
metal-containing film, containing: at least one
metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the
metal atom via an
oxygen atom, where the ligand has a cyclic structure (t) selected from a ring having 4 or more carbon atoms and containing 1 or more
oxygen atoms, a ring having 3 or more carbon atoms and containing 2 or more
oxygen atoms, and a ring having 3 or more carbon atoms and containing 1 or more oxygen atoms and 1 or more heteroatoms other than oxygen atoms. This can provide: a compound for forming a metal-containing film that gives a
resist middle layer film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a
resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a
semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.