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1294 results about "Pure metals" patented technology

By definition, pure metals consist of a single element. Samples of these metals contain nothing but atoms of a single metallic substance.

Barriers for polymer-coated implantable medical devices and methods for making the same

InactiveUS6953560B1Reduce and prevent and inflammationReduce and prevent proliferationStentsSurgeryHafniumPt element
An implantable medical device and methods for making the implantable medical device are disclosed. The implantable medical device includes a substrate. At least a portion of the substrate is coated with a first layer including a polymer containing a drug. A barrier overlies the first layer. The barrier significantly reduces the rate of release of the drug from the polymer, thereby sustaining release of the drug from the medical device for a longer time.The barrier may be a homogeneous layer overlying the first layer, or a number of discrete deposits over the first layer. Alternatively, the barrier may be intermixed with an outer portion of the first layer. The barrier material is biocompatible, and typically has a thickness ranging from about 50 angstroms to about 20,000 microns. Suitable materials for the barrier include, but are not limited to, inorganic compounds, such as inorganic silicides, oxides, nitrides, carbides, as well as pure metals such as aluminum, chromium, gold, hafnium, iridium, niobium, palladium, platinum, tantalum, titanium, tungsten, zirconium, and alloys of these metals. The barriers disclosed may be applied to the first layer by several techniques, depending on the material being applied. Exemplary deposition techniques include physical vapor deposition, alkoxide hydrolysis, and electroless plating.The implantable device may be a stent or a graft, among other possibilities.
Owner:ABBOTT CARDIOVASCULAR

Semiconductor chip using both polysilicon and metal gate devices

A semiconductor structure (and method for forming) having transistors having both metal gates and polysilicon gates on a single substrate in a single process is disclosed. The method forms a gate dielectric layer on the substrate and forms the metal seed layer on the gate oxide layer. The method patterns the metal seed layer to leave metal seed material in metal gate seed areas above the substrate. Next, the method patterns a polysilicon layer into polysilicon structures above the substrate. Some of the polysilicon structures comprise sacrificial polysilicon structures on the metal gate seed areas and the remaining ones of the polysilicon structures comprise the polysilicon gates. The patterning of the polysilicon gates forms the sacrificial gates above all the metal gate seed areas. Following that, the invention forms sidewall spacers, and source and drain regions adjacent the polysilicon structures. Then, the invention protects the polysilicon gates, removes the sacrificial polysilicon structures, and plates the metal gate seed areas to form the metal gates. The sidewall spacers self-align the metal gates. The plating process forms the metal gates of pure metal. All thermal processing that raises the temperature above a damage threshold for the metal is performed before the plating process.
Owner:ELPIS TECH INC

Preparation method of ultra-fine grain high-entropy alloy

The invention belongs to the technical field of metal materials and machining and relates to a preparation method of an ultra-fine grain high-entropy alloy. Firstly, smelting is conducted, an FeCoCrNiMn series high-entropy alloy is compounded to be an intermediate alloy composed of pure metal with the purity being higher than 99.5% or alloy elements, a vacuum furnace is adopted for smelting, and the furnace casting temperature is 1550-1600 DEG C; then after cast ingots are subjected to homogenization heat treatment at the temperature of 1000-1350 DEG C, strong deformation asynchronous and synchronous mixed cold rolling treatment is conducted, continuous rolling is conducted through single-pass large percent reduction, the total rolling quantity is no smaller than 85%, and alloy structure nanocrystallization is achieved; and the rolled alloy is subjected to annealing treatment under the temperature of 450-800 DEG C, and the high-entropy alloy of an ultra-fine grain structure is obtained. Compared with the prior art, the preparation method is simple in technique, easy to achieve on a plate rolling production line, high in production efficiency and low in cost; and the size of the prepared ultra-fine grain high-entropy alloy is large, the comprehensive mechanical performance is excellent, and the preparation method can be applied to the fields of engineering machinery, aeronauticsand astronautics, military industry, electronics, instruments and the like.
Owner:SHANGHAI JIAO TONG UNIV

Non-vacuum solar spectrum selective absorption coating and preparation method thereof

The invention relates to a non-vacuum solar spectrum selective absorption coating and a preparation method thereof. The preparation method comprises the following steps: (1) selecting copper or stainless steel with low infrared emissivity as a base material; (2) selecting oxide resistant to high-temperature oxidation, nitride and complex or doped oxide as a film material, wherein a metal or an alloy serves as a bonding force increased layer, metal nitride or pure metal serves as a high infrared reflecting layer, an absorption layer is composed of two conducting particle ceramic layers with different metal nitride conducting particle volume fractions, and aluminium nitride and aluminium oxide serve as an antireflection layer; (3) controlling the components and contents of different film materials by controlling gas flow and sputtering power; (4) cleaning the base material before the base material is placed into a vacuum chamber, and carrying out argon ion bombarding on the surface of the base material before sputtering is carried out; and (5) obtaining a multilayer coating, wherein the thickness of the coating is less than 500nm, and the coating has high absorption rate alpha (0.9-0.97) in the solar spectrum range (0.3-2.5microns) and has extremely low emissivity epsilon (0.02-0.18) in the infrared region (2.5-50microns).
Owner:GRIMAT ENG INST CO LTD
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