547 results about "Pure metals" patented technology

A purification method for purification and impurity removal of metal rubidium and cesium performs purification and impurity removal treatment on metal rubidium and cesium through external introduction of elements, and specifically comprises the following process steps and conditions: (1) firstly, putting metal lead particles into a porous and liftable stainless steel mesh; secondly, transferring a penicillin bottle in which the primary metal rubidium / cesium liquid is sealed in a vacuum manner into a glove box protected by argon, opening a penicillin bottle cap to transfer the primary metal rubidium / cesium liquid into a reaction tank, and then putting the reaction tank and a stainless steel mesh into a well type resistance vacuum furnace together to finish charging operation; and (2) heating the reaction tank after the charging operation by using a resistance heater, raising the temperature of the furnace to 50-320 DEG C, keeping the temperature for 2-10 hours, and then carrying out solid-liquid separation to obtain the high-purity metal rubidium / cesium, so that Li / Na impurities can be effectively removed, a high-purity metal rubidium / cesium product is prepared, and the production cost is reduced. And the method has the advantages of short process flow, low energy consumption, low reaction temperature, simplicity and convenience in equipment operation, lower manufacturing cost, variable specification, investment saving, environmental pollution reduction, raw material cost reduction and the like.

The invention belongs to the field of vanadium metallurgy, and particularly relates to a method for preparing metal vanadium through aluminothermy in cooperation with molten salt electrolysis so as to solve the problem that in the prior art, the production cost of the metal vanadium is high due to the fact that high-temperature and high-vacuum refining is used for removing impurity aluminum. The method comprises the following steps: uniformly mixing a vanadium-containing raw material, metal aluminum and an additive according to a weight ratio of 100: (25-35): (4-8), igniting to carry out aluminothermic reduction reaction, and removing upper smelting slag after a reaction product is cooled to obtain primary metal vanadium; and the primary metal vanadium is subjected to molten salt electrolytic refining in the protective gas atmosphere, and refined metal vanadium is obtained. According to the method, high-temperature or high-vacuum refining is not needed, the high-purity metal vanadium can be prepared only through the two-step operation of aluminothermic reduction and molten salt electrolysis, and compared with an existing vanadium preparation process adopting high-temperature and high-vacuum refining, the energy consumption and the production cost are remarkably reduced.

The invention is applicable to the technical field of titanium alloy pipe processing, and particularly relates to a preparation method of a high-plasticity TA15 titanium alloy pipe, which comprises the following steps: step S1, selecting sponge titanium, pure metal and intermediate alloy, preparing according to standard components of TA15 titanium alloy to obtain a prepared raw material, and smelting the prepared raw material for three times by adopting a vacuum consumable smelting furnace to obtain a high-plasticity TA15 titanium alloy pipe; and the TA15 titanium alloy cast ingot with the diameter being 600 mm is obtained. According to the method, the mechanical property and plasticity of the titanium alloy pipe are remarkably improved by accurately controlling the temperature and deformation of each machining step. And three-time upsetting and three-time drawing forging is carried out within the temperature range of T beta or above, coarse grains are effectively crushed, and grain structures are refined. And then, the metallographic structure of the wool rod is gradually optimized by accurately controlling the forging temperature and the deformation amount.

The invention provides a method and system for purifying metal gallium, the purity of the metal gallium is smaller than or equal to 4N, the method comprises the steps that part of the metal gallium is subjected to first electrolysis through electrolyte, and purified electrolyte with the set gallate ion content is obtained; the purified electrolyte containing the set gallate ion content is used for conducting second electrolysis on the remaining metal gallium, and electrolytic gallium is obtained; and carrying out gradient crystallization on the electrolytic gallium to remove impurity metals in the electrolytic gallium so as to obtain the high-purity metal gallium. According to the method, gallium metal is purified to the purity of 7N or above.

The invention belongs to the technical field of high-purity metal preparation, and particularly discloses a method for preparing 5N-grade ultrapure iron. The method is characterized by comprising the following steps: electrolyzing industrial pure iron to prepare liquid; carrying out ion exchange treatment on the solution to reduce near-iron elements such as Co, Ni, Cu and Zn and impurities in the solution, so that ferrous ions are effectively enriched; then, the solution with the near iron element removed serves as electrolyte for electrolysis to prepare pure iron; in the electrolysis process, a ruthenium-coated titanium plate is used as an anode, and a pure titanium plate is used as a cathode; performing high-temperature vacuum annealing treatment and high-temperature atmosphere reduction on a product obtained by electrolysis to remove free-state and combined-state hydrogen and oxygen elements in the product; the 5N-grade ultrapure iron is prepared by matching the steps with a corresponding process. The method has the advantages that the removal of near-iron elements and gas elements is realized by combining solution purification, electrolysis, vacuum annealing and reduction from enrichment and purification of ferrous ions, and the purpose of preparing 5N-grade ultrapure iron through electrolysis is realized.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention relates to the technical field of chemical metallurgy, and discloses a preparation and purification method of high-purity sponge vanadium, which comprises the following steps: preparing a vertical vacuum reduction furnace, adding a reducing agent, discharging air in the furnace, and introducing shielding gas; heating, adding vanadium chloride for smelting, taking out, putting into a distillation furnace, and carrying out heating and heat preservation treatment; and finally, putting the product into a crucible in an electron beam furnace, vacuumizing, heating and smelting, introducing protective gas into the electron beam furnace after smelting, and cooling to room temperature to obtain a sponge vanadium product. The high-purity sponge vanadium is prepared by adopting a novel vanadium chloride metal thermal reduction-distillation method, and the sponge vanadium is further purified through vacuum electron beam refining, so that the common technical problems of long flow, low product purity and the like of a traditional method for preparing the high-purity metal vanadium are solved.

The invention belongs to the field of electronic materials, and particularly relates to a synthesis method of a high-purity metal complex precursor. Compared with a synthesis method in the prior art, the synthesis method provided by the invention changes a reaction route, substituted cyclopentadiene is prepared firstly, then the substituted cyclopentadiene reacts with butyl lithium and metal chloride in sequence to obtain a substituted cyclopentadienyl metal trichloride intermediate, and finally the substituted cyclopentadienyl metal trichloride intermediate reacts with lithium dialkylamino to obtain the substituted cyclopentadienyl metal trichloride. The target product substituted cyclopentadienyl tri (dialkylamino) metal complex is obtained, and the prepared product is high in yield and purity. The synthesis method provided by the invention is convenient for large-scale production in factories, improves the productivity, and meets the ever-increasing market demand.

The invention discloses a method for preparing an ultrahigh-temperature ceramic coating by an ultrahigh-temperature metal gas source based on a molten salt medium, which comprises the following steps of: mixing low-melting-point salt A, metal fluoride and metal M to obtain a mixture C, putting the mixture C into a first crucible, mixing low-melting-point salt B and metal M to obtain a mixture D, putting the mixture D into a second crucible, putting a carbon base material into a deposition furnace, and performing vacuum drying to obtain the ultrahigh-temperature ceramic coating. Heating the first crucible to melt the mixture C to obtain a melt E, and heating the second crucible to melt the mixture D to obtain a melt F; carrier gas is guided into the first crucible, the carrier gas flow passes through the melt E to form gas flow containing a metal gas source, the gas flow containing the metal gas source is guided into the second crucible, and the gas flow containing the metal gas source is filtered by the melt F in the second crucible to form a pure metal reaction gas source, and finally, a pure metal reaction gas source is introduced into the deposition furnace for deposition of the carbon base material, and the ultra-high-temperature ceramic coating is obtained. The method is easy to operate and low in cost.

The invention belongs to the field of secondary battery manufacturing, and particularly relates to a composite foil current collector welding method.The composite current collector comprises an upper aluminum conducting layer, a middle high-molecular polymer layer and a lower aluminum conducting layer, and the welding method comprises the following steps that S1, micropore machining is carried out on a tab area of the composite current collector, forming a through micropore array; s2, laying a first pure metal foil on the upper surface of the tab area, and laying a second pure metal foil on the lower surface of the tab area; and S3, welding the tab area on which the pure metal foil is laid, so that the first pure metal foil, the upper aluminum conductive layer, the lower aluminum conductive layer and the second pure metal foil form through metallurgical bonding at the position of the micropore. According to the composite foil current collector welding method, ultrasonic energy is highly concentrated on a metal interface at the edge of a micropore, local metallurgical connection is achieved, overall heat input is low, hot melting and carbonization of a middle high-molecular polymer layer are effectively avoided, and an ultrathin metal layer is protected against heat damage.

The utility model discloses a novel double-layer pure metal transmission array antenna used for wave beam scanning, compared with a traditional transmission array, a dielectric substrate which is easily influenced by environmental factors is not used, but a pure metal structure is adopted, so that the dielectric substrate is prevented from being damaged in some extreme environments. Meanwhile, two groups of first double-end cross-shaped slot structures and second double-end cross-shaped slot structures which are different in length and parallel to the y direction are etched on the transmission unit, and the first double-end cross-shaped slot structures and the second double-end cross-shaped slot structures are alternately arranged on the transmission unit. Compared with a Huygens pure metal unit, the unit has the functions of low transmission loss and meeting the 360-degree phase change range, the unit structure is simple, large-scale multi-parameter scanning is not needed, the design difficulty is low, the expandability and universality of the unit are improved, meanwhile, an additional structure such as a metal column is not introduced, and the cost is low. And relatively low processing complexity is maintained, and the processing cost is relatively low.

The present disclosure relates to the field of the preparation of high purity sodium and the safe treatment of sodium calcium slag, and discloses a method and apparatus for sodium slag recovery by using gravity separation—controllable combustion—alkaline liquor leaching process for the preparation of high purity sodium and safe treatment of sodium calcium slag. The method comprises the following steps: (1) subjecting a liquid sodium slag to a gravity stratification to obtain pure metallic sodium and high calcium content sodium slag; (2) roasting the high calcium content sodium slag to obtain a roasting slag; and (3) leaching the roasting slag by using an alkaline liquor to obtain the sodium hydroxide solution and calcium hydroxide. The method and apparatus provided by the present disclosure have advantages including high efficiency separation of sodium and calcium, saving separation time, safe and controllable production process, and continuous production process, thereby providing a safe and efficient method for the preparation of high purity sodium and safe treatment of new sodium calcium slag generated by the method, allowing continuous production of high purity sodium and safe recycle of new sodium calcium slag.

The invention discloses a method for producing high-purity metal chromium from waste chromium-containing refractory materials by using a carbon reduction method, belongs to the technical field of general industrial solid waste resource environment-friendly comprehensive utilization and metal smelting, and particularly relates to a method for producing the high-purity metal chromium from the waste chromium-containing refractory materials by performing crushing magnetic separation, acid leaching impurity removal, carbon reduction, slag-metal separation and electroslag refining processes on the waste chromium-containing refractory materials. The purity of the finally produced metal chromium reaches 98.9%-99.4%, and the chromium recovery rate reaches 82.2%-82.5%. Wherein yttria-stabilized zirconia and lanthanum oxyfluoride are selected as additives, it is accidentally found in the research process that the lanthanum oxyfluoride and zirconia are combined for use to have a synergistic effect, and during specific combination, lanthanum oxyfluoride and zirconia can form a La-Zr-O-F composite melt, so that the slag-gold separation efficiency is remarkably improved; and further, the purity of the final product chromium metal is obviously improved.

The invention provides a preparation method and system of high-purity metal rubidium or cesium, the method comprises the following steps: taking metal rubidium or cesium as a raw material, taking molten metal Ag as an extraction medium, utilizing the characteristics that Na, Li and K have certain solubility in metal Ag and rubidium and cesium are insoluble in Ag, reducing the content of impurities Na, Li and K in the metal raw material rubidium or cesium, and then carrying out vacuum distillation to obtain the high-purity metal rubidium or cesium. According to the method, purification and impurity removal are conducted on the metal rubidium or cesium through melt extraction, the metal raw material rubidium or cesium can be treated to prepare the high-purity metal rubidium or cesium product, the purification rate of Na and Li is 80% or above, the purification rate of K is 50% or above, the purity of the prepared high-purity rubidium is 99.90% or above, the purity of the prepared high-purity cesium is 99.95% or above, the yield is 95% or above, the technological process is short, equipment is simple, and the method is suitable for industrial production. The problems of low efficiency and unobvious impurity removal effect of traditional distillation are solved.

The invention discloses mold equipment for forming a metal wrap angle. The mold equipment comprises a wrap angle forming module, a clamping mechanism, a synchronous feeding and discharging mechanism, a table top and a stamping module, the stamping module is fixedly mounted on the table board; the wrap angle forming module comprises an external positioning ring, a wrap angle metal shell outer sleeve, a metal shell mold lower bottom ring, a core, an edge wrapping metal shell positioning ring, a metal blank, a middle sleeve positioning ring and an edge forming middle sleeve. The external positioning ring is clamped in a limiting buckle on the table top, the wrap angle metal shell outer sleeve is placed on an inner ring of the external positioning ring, and the lower face of the wrap angle metal shell outer sleeve is attached to the table top; when in use, the wrap angle forming module adopts a form of combining a plurality of pure metal circular rings to achieve a forming effect, the manufacturing difficulty of the independent circular rings is greatly reduced, uniform blanking can be performed through laser cutting, and then a fit clearance is subjected to finish machining through a lathe, so that the mold manufacturing time is shortened, the waste of raw materials is greatly reduced, and the production cost is reduced. And the method can be efficiently and quickly put into a production link.

The invention provides a nano-porous Co3Ti / Co composite electrode as well as a preparation method and application thereof. The preparation method comprises the following steps: cleaning high-purity Co and Ti metal sheets, corroding oxides on the surfaces of Al metal sheets, then placing the Co, Ti and Al metal sheets in an electric arc furnace for melting to obtain alloy ingots, then preparing small alloy ingots through a directional solidification technology, and carrying out corrosion treatment on the alloy ingots to finally obtain the nano-porous Co3Ti / Co composite electrode. According to the electrode, a Co3Ti / Co intermetallic compound is seamlessly integrated on a Co ligament with a dual-mode pore structure (large pores are about 200nm, and small pores are about 3nm), so that the specific surface area of an electrode material is effectively increased, and the mass transfer and electron transport capabilities of an electrolyte are improved. Meanwhile, Co and Ti sites in the intermetallic compound are beneficial to adsorption of H and OH intermediates respectively, so that water dissociation and * H adsorption / desorption processes are promoted, alkaline hydrogen evolution reaction kinetics is remarkably enhanced, and an efficient electrode material is provided for hydrogen production application.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The invention relates to a method for purifying rhodium from a complex-component rhodium leaching solution, and belongs to the technical field of precious metal refining and purification. The method comprises the following steps: adding a reducing agent into rhodium leaching liquid for reduction to obtain RhCl3 primary purification liquid and insoluble slag; simultaneously adding sulfite and ammonium salt into the RhCl3 primary purification liquid to precipitate rhodium in the form of (NH4) 3Rh (SO3) 3; hydrochloric acid is added into the (NH4) 3Rh (SO3) 3 precipitation residues, heating and boiling are conducted, the (NH4) 3Rh (SO3) 3 precipitation residues are dissolved in the form of RhCl3 and enter a solution, SO3 < 2-> in the solution is removed in the form of SO2, and a secondary purification solution of RhCl3 is obtained; adding a strong oxidant into the secondary purified solution of RhCl3, and carrying out oxidation reaction to obtain RhCl4; adding alkali into the RhCl4 solution to adjust the pH value, and boiling to obtain RhO2. 2H2O precipitation slag; and the RhO2. 2H2O precipitation slag is sequentially subjected to pure water slurrying, hydrazine hydrate reduction, calcination and hydrogen reduction to obtain the high-purity metal rhodium. According to the method disclosed by the invention, the high-purity metal rhodium of which the purity is greater than 99.95% can be prepared, and the direct recovery rate of rhodium is greater than 97%.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention belongs to the technical field of wrought aluminum alloy material processing, and relates to a high-strength high-conductivity 7050 aluminum alloy and a short-process preparation process thereof.The process comprises the steps that pure metal aluminum, pure metal zinc, pure metal magnesium, pure metal copper and pure aluminum-zirconium intermediate alloy serve as raw materials, 6.1-6.3 wt.% of Zn, 2.3-2.5 wt.% of Mg, 2.4-2.6 wt.% of Cu and 0.12-0.14 wt.% of Zr are matched, smelting, melt refining and refining treatment are carried out, and then the high-strength high-conductivity 7050 aluminum alloy is obtained; sub-rapid solidification of a melt is realized by adopting water-cooling copper mold casting, as-cast grains are remarkably refined, and formation of a coarse second phase is inhibited; traditional multi-stage annealing is replaced with single-stage homogenizing annealing, so that the residual phase area percentage is smaller than or equal to 1.0%, and the maximum residual phase size lt is achieved; 30 [mu] m; and by combining multi-pass hot rolling and solid solution-aging cooperative regulation and control, the problem of intensity-conductivity inversion caused by second phase distribution and grain boundary segregation is solved. Compared with a traditional process, the homogenization time is shortened by 50% or above, the total technological process is reduced by 30%-40%, and finally the high-performance 7050 aluminum alloy with the tensile strength larger than or equal to 650 MPa and the electric conductivity larger than or equal to 40% IACS is obtained.

The invention discloses a method for preparing high-purity chromium metal through carbon reduction, which comprises the following steps: proportioning chromic oxide, carbon powder, starch and water according to a certain proportion, and carrying out primary compaction to obtain a wet blank; adding the wet blank into an electric arc furnace, and smelting and melting to obtain bulk carbon chromium; after being manually and coarsely crushed, the molten and cooled large carbon chromium blocks are sequentially fed into a jaw crusher and a column mill to be crushed; adding chromic oxide, starch and water into the crushed carbon chromium, mixing, and carrying out secondary compaction to obtain a briquette-like material; feeding the coal-like spherical material into a drying box, gradually heating, fully drying a green body, and then cooling; and after drying, loading the blank into a vacuum reduction furnace layer by layer, and carrying out vacuum reduction on chromium sesquioxide and carbon chromium in a four-side heating manner to obtain the high-purity metal chromium. According to the method, preparation of high-purity metal chromium is achieved, and the conversion rate of preparing metal lattice powder from chromium oxide can be greatly increased; and the content of impurities in the metal chromium is reduced.

The invention discloses a method for accurately measuring trace calcium in high-purity magnesium metal by combining membrane desolvation and triple quadrupole mass spectrometry, which comprises the following steps: (1) sequentially adding water to wet a high-purity magnesium sample and adding acid to dissolve the sample to obtain a digestion solution, and adding an internal standard solution into the digestion solution; (2) preparing calcium element solutions with multiple concentration gradients, adding the internal standard solution, fixing the volume, and shaking uniformly; (3) sequentially carrying out atomization treatment and membrane desolvation treatment on the prepared solution to respectively obtain dry aerosol of the to-be-detected solution and the standard solution; and (4) carrying out scanning determination on the dry aerosol of the solution to be detected and the standard solution in the step (3) by using a triple quadrupole mass spectrometer, and calculating to obtain the calcium content in the high-purity magnesium sample. According to the method, the 24Mg16O polyatomic interference brought by the matrix element and the mass spectrum interference of the working gas Ar on the to-be-detected element 40Ca are removed through membrane desolvation and triple quadrupole mass spectrometry, so that the trace calcium element in the high-purity magnesium sample can be accurately determined, and the lower determination limit can reach ppb level.

The invention provides a millimeter wave phased-array antenna of a pure metal dipole and a packaging process of the millimeter wave phased-array antenna. The millimeter wave phased array antenna mainly solves the problems that a traditional millimeter wave phased array antenna is high in complexity, angle scanning of the antenna is limited, antenna packaging efficiency is low, and machining difficulty is large. According to the invention, a pure metal dipole antenna structure is adopted to complete an antenna radiation function, and metal walls are arranged at the periphery of the antenna, so that the influence of mutual radiation between antenna dipoles is avoided. The millimeter wave antenna array is integrally packaged and integrated on an Al2O3 ceramic packaging structure, and connection and packaging of the millimeter wave phased array antenna and the chip assembly are realized through a single-layer ceramic packaging layer. The antenna provided by the invention has the advantages of simpler structure, wide-angle scanning, low loss of a packaging process and high efficiency. The method can be used for realizing a high-integration and miniaturized millimeter wave packaging phased-array antenna.

A device and method for preparing high-purity metals by vacuum distillation and bidirectional step condensation, the device comprising an atmosphere control device, a vacuum distillation device, a charging device, an intelligent control device, and an exhaust gas treatment device. The atmosphere control device comprises a nitrogen bottle and a control valve located above the bottle mouth for controlling the opening and closing of the nitrogen bottle. The vacuum distillation device comprises a vacuum distillation device and a vacuum pump connected to the vacuum distillation device via a pipeline. The charging device is located in the middle of the vacuum distillation device, and the intelligent control device is connected to the vacuum distillation device. The exhaust gas treatment device comprises an impurity removal device. The vacuum distillation device is provided with a plurality of heaters, which are arranged in parallel along the length direction of the charging device and the condensation zone on both sides of the vacuum distillation device. The present invention also includes a method for preparing high-purity metals using the device. The device of the present invention has a simple structure, is not restricted by the gravity field, is convenient for sampling, and has high impurity removal efficiency.

The invention discloses a control method for optimizing a solid / liquid interface of a solution in indium Czochralski purification based on numerical simulation, belongs to the technical field of preparation of high-purity metal materials, and obtains a process regulation and control scheme for stabilizing the solid / liquid interface of the solution through an external magnetic field and establishment of a mapping relation of process parameters-interface data-impurity concentration based on multi-physics field numerical simulation. The method comprises the following steps: acquiring original physical property data of the czochralski furnace and indium, calculating a geometric model, performing mesh generation, and establishing a mathematical model; based on historical experimental data, boundary conditions are set, and the key processes of indium czochralski purification seeding, shouldering and equal diameter are simulated; coupling multiple physical fields, and analyzing the change of a solid / liquid interface of the solution in the direct pulling process; and on the basis of a numerical simulation result, a deep reinforcement learning model is constructed, a mapping relation among process parameters, interface data and impurity concentration is established, 'prediction-verification-optimization 'closed-loop iteration of the process is realized, and collaborative regulation process parameters for stably preparing 8N high-purity indium are obtained.

The invention relates to the technical field of resource recovery and metallurgy, and discloses a method for separating high-purity metal from neodymium-iron-boron alloy waste, which comprises the following steps: by taking the neodymium-iron-boron alloy waste as an anode and an inert material as a cathode, oxidizing and dissolving Nd, Dy, Pr, Co and Fe into electrolyte by adopting constant-voltage electrolysis, and separating out part of Fe at the cathode to obtain high-purity iron; adding sodium sulfate into the electrolysis tail liquid, adjusting the pH value, and filtering to obtain sodium sulfate double salt precipitate of rare earth and filtrate; h2O2 is added into the filtrate, sodium jarosite is obtained through filtration by adjusting the pH value, NH4HCO3 is added into the iron-removed filtrate to precipitate CoCO3, and the tail liquid can be directly and repeatedly used in the electrolysis process; the rare earth sodium sulfate double salt precipitate is sequentially subjected to hydrochloric acid dissolution, two-step extraction, precipitation and roasting, and Dy, Nd and Pr oxides are obtained respectively. Comprehensive recovery of metal is achieved through the processes of electrolysis, extraction, precipitation, roasting and the like, and the method has the advantages of being simple in process, high in metal purity, low in material consumption and energy consumption, free of pollution and easy to industrialize.

The invention discloses a preparation method of an R-T-B rare earth permanent magnet, and the method comprises the following steps: 1, coating with a coating: coating an S1 region on the surface of a permanent magnet substrate with a first coating to obtain a first coating region S1, and coating an S2 region on the surface of the permanent magnet substrate with a second coating to obtain a second coating region S2; the first coating area S1 is smaller than or equal to S, the second coating area S2 is smaller than or equal to S, S is the magnet surface area where the coating face is located, and the first coating and the second coating are composed of one or more components of pure metal containing Dy and / or Tb, hydride, fluoride and oxide; and 2, carrying out grain boundary diffusion treatment on the magnet obtained in the step 1, and carrying out aging treatment after cooling to obtain the R-T-B rare earth permanent magnet. The method has the advantages that diffusion of heavy rare earth in a grain main phase can be reduced, the use amount of the heavy rare earth is reduced, and the coercive force of a selected area can be further enhanced.

The invention discloses a pure metal / high-entropy amorphous alloy nano multilayer film with a three-dimensional interface and a preparation method, and belongs to the field of metal surface modification.The nano multilayer film comprises crystal layers and amorphous layers which are alternately stacked, the crystal layers are of a single-phase face-centered cubic structure, crystal grains are columnar crystals growing in the deposition direction and penetrating through component layers, and the amorphous layers are of a single-phase face-centered cubic structure. The amorphous layer keeps a long-range disordered structure, and an interface between the crystal layer and the amorphous layer is of a three-dimensional structure; different from a two-dimensional sharp interface, a three-dimensional interface has certain strength, movement of dislocation in the area is subjected to stress, and then the current situation that dislocation completes slippage, namely annihilation, is changed. According to the preparation method, dislocation is orderly arranged near a three-dimensional interface, so that accumulation occurs, heterogeneous deformation stress is remarkably enhanced through long-range ordered dislocation arrangement, and the strength of the material is effectively improved.

The invention discloses a preparation method of electronic-grade high-purity manganese metal, which comprises the following steps: taking 99.8% manganese metal as an anode in an electrolytic bath, additionally arranging an ion diaphragm bag on the anode, taking a titanium plate as a cathode, and taking a manganese nitrate solution purified and adsorbed by alpha-manganese dioxide and chelating resin containing iminodiacetic acid group as an electrolyte. The method effectively avoids pollution of non-metal impurities and metal impurities, and has the technical advantage of high purity of the obtained manganese metal.