The invention belongs to the technical field of back contact cells, and particularly relates to a back contact
cell manufacturing method for improving
passivation performance and a back contact
cell thereof, and the method comprises the steps: S2, depositing a first
semiconductor layer and a phosphorosilicate glass layer on the back surface of a
silicon wafer, and reserving the first
semiconductor layer and the phosphorosilicate glass layer as a first
mask layer; s3, performing texturing cleaning on the front surface of the
silicon wafer; the first
mask layer is removed in the final cleaning process after texturing; s4, forming a
passivation layer and an anti-reflection layer on the front surface of the
silicon wafer; s5,
coating the back surface to form a second
mask layer; s6, forming a second
semiconductor opening region; and S7, texturing or
polishing the second semiconductor opening area on the back surface, and cleaning by using an HF solution with the
mass concentration of 0.5%-5% to remove the second
mask layer and the winding plating layer generated in the front
surface coating process in the S4. The back surface winding plating layer does not need to be removed, damage to the first semiconductor layer and the front
surface film layer can be avoided, the overall
passivation level can be improved, and therefore the battery efficiency is improved.