26 results about "Back surface field" patented technology

The utility model relates to a battery piece, a battery string and a photovoltaic module, and belongs to the technical field of solar cells. The battery piece comprises a battery body and a metal foil, and the backlight surface of the battery body is provided with a back surface grid line; the metal foil is connected to the back surface grid line; a layer of metal foil is arranged on the backlight side of the cell body to connect the grid lines, so that lower line loss can be realized under the condition that an aluminum back surface field is thinner, even no aluminum back surface field exists or a small amount of silver paste is used, further, less cutting in the preparation process can be realized, the loss of a cell piece is favorably reduced, and meanwhile, warping or cost increase is not caused.

Provided are N-type monocrystalline silicon double-sided solar cell and preparation method thereof. Preparation method includes following steps: S1: performing double-sided texturing to obtain N-type monocrystalline silicon with front surface and back surface having first textured structures respectively; S2: performing back-surface phosphorus diffusion doping to form back surface field; S3: removing winding plating and PSG on front surface and back surface, forming mask for protecting first textured structure of back surface on surface of back surface field, and manufacturing second textured structure on front surface of N-type monocrystalline silicon; S4: performing front-surface boron diffusion doping to form front-surface doped emitter junction layer; S5: after removal of mask, winding plating and BSG on front surface and back surface, depositing passivation antireflection layer on surface of front-surface doped emitter junction layer, and depositing passivation layer on surface of back surface field; and S6: preparing front surface electrode and back surface electrode.

A panel including at least one solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than −50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

The invention discloses an epitaxial structure of a three-junction solar cell and a manufacturing method of the epitaxial structure. The epitaxial structure comprises a first sub-cell, a second sub-cell and a third sub-cell which grow in a stacked mode in sequence. The second sub-cell comprises an InGaAs base region, an InGaAs emitter region, a first back surface field layer and a first window layer; the third sub-cell comprises a GaInP base region, a GaInP emitter region, a second back surface field layer and a second window layer; one or more of the first window layer, the second back field layer and the second window layer is or are composed of a superlattice structure composed of multiple sets of Alx1In1-x1P layers and Alx2In1-x2P layers which grow alternately, 0.65 < = x1 < = 0.75, x2 = 0.4, the Alx1In1-x1P layers are tensile stress, and the Alx2In1-x2P layers are compressive stress. And the limiting capability of the back surface field layer and / or the window layer on current carriers in a high-temperature environment is effectively improved.

Disclosed is a back contact solar cell. A back surface field region is arranged as a columnar hole structure, such that the thickness of a silicon substrate can be fully utilized to form a bottom region and a column wall back surface field region, the back surface field collecting area is increased without occupying additional back surface area, and the area of a back surface emitting region is maximized. Meanwhile, the back surface field region is deeply arranged into a silicon wafer, so that majority carriers can be collected in the silicon wafer, the transmission and collection distance is shortened, and the collection effect is enhanced. Thus, the structure can enhance the collecting of the minority carriers and the majority carriers, and the efficiency of the cell is overall improved.

The present invention provides a solar cell, a production method, and a solar cell assembly, relating to the field of photovoltaic technology. The solar cell comprises: an emitter layer, an N-type silicon substrate, a back surface field layer, and a metal-doped amorphous silicon layer, which are stacked in sequence; the atomic percentage of hydrogen atoms in the metal-doped amorphous silicon layer is w, with 20% ≥ w ≥ 5%; the emitter layer is located on the light-facing surface of the N-type silicon substrate; the front electrode is located on the light-facing surface of the emitter layer; and the back metal electrode is located on the backlight side of the metal-doped amorphous silicon layer. The metal-doped amorphous silicon layer enhances its barrier effect on minority carriers while selectively allowing majority carriers to pass through, improving carrier selectivity, reducing interfacial recombination between the back metal electrode and the back surface field layer, reducing resistance loss, and providing excellent electrical conductivity. The abundant hydrogen atoms in the metal-doped amorphous silicon layer effectively passivate internal defects and interfacial defects in the N-type silicon substrate and the back surface field layer, reducing interfacial recombination between the back metal electrode and the back surface field layer.

The utility model provides a solar cell structure, which belongs to the technical field of solar cell manufacture and comprises a semiconductor substrate, an emitter, a back field and an isolation portion. The back surface field is located on the back surface of the semiconductor substrate and has a first conduction type; a first electrode is arranged on the back field; the emitting electrode is located on the front face of the semiconductor substrate and extends to the side face of the semiconductor substrate, and the emitting electrode is of a second conduction type opposite to the first conduction type; a second electrode is arranged on the emitting electrode; the isolation part is located between the back surface field and the emitting electrode so as to isolate the back surface field from the emitting electrode; and the isolation part is covered with an insulating passivation film. The emitter on the front surface of the front junction cell extends towards the side surface and even the back surface of the semiconductor substrate, the area of the emitter is maximized, the area of the emitter is increased, and the efficiency of the cell is improved.

The invention discloses a high-efficiency multi-junction solar cell suitable for a low-temperature and low-light-intensity environment. The solar cell comprises a front electrode, a GaInP top cell, a first tunnel junction, a GaInAs middle cell, a second tunnel junction, a Ge bottom cell and a back electrode which are sequentially stacked from top to bottom, the GaInAs middle cell sequentially comprises an n-type doped GaInP window layer, an n-type doped GaInAs emission layer, a p-type doped GaInAs base layer and a p-type doped GaInP back surface field from top to bottom. Wherein the doping concentration of one side, close to the GaInP back surface field, of the GaInAs base layer is more than 10 times lower than the doping concentration of the GaInP back surface field. The photoelectric conversion efficiency of the cell provided by the invention can reach 37% or above in a low-temperature and low-light-intensity environment (3.3% AM0, 4.47 mW / cm < 2 >,-130 DEG C).

A III-V tandem cell and a preparation method therefor, relating to the technical field of solar cells. The preparation method for the III-V tandem cell comprises the following steps: using an XBC cell as a substrate, and sequentially depositing a substrate layer, a tunnel junction layer, a back surface field layer, a body layer, a window layer and an antireflection layer on the front surface of the XBC cell, wherein the tunnel junction layer comprises a GaInP layer and an AlGaAs layer which are sequentially deposited. The method for preparing the III-V tandem cell uses a multi-tunnel junction structure to enhance the passivation effect, thereby improving the cell efficiency.

The present invention provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes an N-type single-crystalline silicon wafer, which has a first surface and a second surface arranged opposite to each other. On the first surface, a first intrinsic passivation layer, an N-type back surface field layer, a first transparent conductive layer, and a first electrode are sequentially arranged from inside to outside. On the second surface, a second intrinsic passivation layer, a P-type emitter layer, a second transparent conductive layer, and a second electrode are sequentially arranged from inside to outside. Among them, a transparent conductive film buffer layer is further arranged between the first transparent conductive layer and the N-type back surface field layer. In this way, the contact resistance between the first transparent conductive layer and the N-type amorphous or microcrystalline silicon layer can be made lower.

The present invention relates to a back-contact solar cell. The back surface field region is positioned using a prismatic hole structure, which allows the thickness of the silicon substrate to be fully utilized to form the bottom and prismatic back surface field regions, thereby increasing the back surface field collection area without occupying the back surface area and maximizing the area of ​​the back surface emitter region. In a solar cell, the larger the emitter area ratio within a certain range, the more efficient the capture and transport of minority carriers, resulting in higher cell efficiency. Furthermore, because the back surface field region is positioned deep into the silicon wafer, majority carriers can be collected within the silicon wafer, shortening the transport and collection distance and enhancing the collection effect. As a result, this structure efficiently increases the collection of both minority and majority carriers, improving overall cell efficiency.

This invention discloses an epitaxial structure of a triple-junction solar cell and its manufacturing method, comprising a first sub-cell, a second sub-cell, and a third sub-cell grown sequentially in layers; the second sub-cell includes an InGaAs base region, an InGaAs emitter region, a first back surface field layer, and a first window layer; the third sub-cell includes a GaInP base region, a GaInP emitter region, a second back surface field layer, and a second window layer; one or more of the first window layer, the second back surface field layer, and the second window layer are formed by multiple sets of alternately grown Al... x1 In 1‑x1 P layer, Al x2 In 1‑ x2 The superlattice structure consists of P layers, where 0.65 ≤ x1 ≤ 0.75, x2 = 0.4, and Al x1 In 1‑x1 Layer P is under tensile stress, Al x2 In 1‑x2 The P-layer is under compressive stress. In this application, the window layer and / or back field layer are set as a superlattice structure, which effectively improves the ability of the back field layer and / or window layer to confine charge carriers under high temperature environment while ensuring crystal quality.

In a solar cell, the back surface of a substrate thereof is provided with alternately distributed emitter zones and back surface field zones. An emitter is formed in each emitter zone, and the emitters are made of boron-doped monocrystalline silicon. A back surface field is formed in each back surface field zone; the back surface fields comprise tunneling oxide layers and polycrystalline silicon layers in stacked distribution, the polycrystalline silicon layers being made of phosphorus-doped polycrystalline silicon, and the tunneling oxide layers being located between a polycrystalline silicon layer and a polycrystalline silicon layer. Positive electrodes are electrically connected to the emitters, and negative electrodes are electrically connected to the back surface fields. In the described solar cell, the light-receiving area of the front surface can be expanded and the recombination rate of electron-hole pairs can be reduced, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

The invention provides a multi-junction solar cell and a manufacturing method thereof. A distributed bragg reflector (DBR) is arranged between a back field layer and a base region of at least one sub-cell. Meanwhile, the thickness of the back surface field layer is the thickness required by complete destructive interference between the first reflected light and the second reflected light. Based on the structure, photons which are not absorbed for the first time are reflected back to be absorbed for the second time through the DBR reflector, which is equivalent to increasing the effective absorption thickness in a disguised manner, reducing the thickness of a base region and reducing minority carrier recombination, so that the anti-radiation performance of the cell is improved. Besides, complete destructive interference can be realized by arranging the back field layer, so that minority carrier recombination on the surface of the sub-cell can be effectively passivated through the back field layer and the collection efficiency of photon-generated carriers can be improved on the premise of not influencing the reflection effect of the DBR reflector, thereby improving the conversion efficiency of the cell. Therefore, the anti-radiation performance of the cell and the collection efficiency of the photon-generated carriers are synchronously improved.

Discussed is a solar cell including a semiconductor substrate comprising a base region, an emitter region having a conductive type opposite to that of the base region, and a back surface field region having the same conductive type as the base region and a higher doping concentration than the base region, and a first electrode and a second electrode respectively connected to the emitter region and the back surface field region, wherein the base region has a specific resistance of 0.3 Ωcm to 2.5 Ωcm.

The present disclosure relates to a heterojunction solar cell, including a substrate layer, a first passivation layer, a second passivation layer, an emission member, and a back surface field member. The emission member and the back field member each include a doped layer, a conducting layer, and an electrode layer sequentially disposed along the direction away from the substrate layer. One or both of the emission member and the back surface field member include an electrical contact reinforced structure. The electrical contact reinforced structure is a first doped region and a second doped region of the doped layer. The second doped region is disposed beside the first doped region and is shielded by the electrode layer. One or both of the doping concentration and the crystallization degree of the second doped regions are higher than those of the first doped region.

The invention relates to the technical field of solar cells, in particular to a device structure of an N-type PERT double-sided solar cell and a preparation method thereof, the device structure of the N-type PERT double-sided solar cell comprises a front electrode, a front antireflection layer, a passivation layer, a p + emitter, an N-type monocrystalline silicon wafer, an n + back surface field, a back antireflection layer and a back electrode; the n + back surface field is an amorphous silicon-microcrystalline silicon-polycrystalline silicon composite thin film layer and is composed of an amorphous silicon layer, a microcrystalline silicon layer and a polycrystalline silicon layer; the doped microcrystalline silicon thin film layer and the polycrystalline silicon thin film layer are used for replacing device design improvement of a traditional thermal diffusion back surface field, silicon wafer body defects (such as dislocation, lattice distortion and the like) caused by introduction of phosphorus impurities are effectively avoided, a gradually-changed back surface field and a refractive index gradually-changed optical composite thin film are formed, dual optimization of electrical performance and optical performance is achieved, and the manufacturing cost is reduced. Therefore, the open-circuit voltage and the short-circuit current are improved, and the conversion efficiency of the solar cell is improved.

The invention provides a magnesium fluoride film crystalline silicon photovoltaic cell, a preparation method thereof and an electric device, and belongs to the technical field of photovoltaic cells. The magnesium fluoride thin film crystalline silicon photovoltaic cell structurally comprises a back metal electrode layer, a back SiNx passivation layer, a tunneling poly phosphorus-doped amorphous silicon layer, an N-si silicon substrate, a P + emitter layer, a positive SiNx passivation layer, a magnesium fluoride thin film and a front metal electrode layer from bottom to top in sequence. According to the magnesium fluoride thin film crystalline silicon photovoltaic cell provided by the invention, the magnesium fluoride thin film is newly added on the surface of the aluminum oxide, so that recombination of charges at an interface is effectively prevented, the service life of minority carriers is prolonged, charge transmission is enhanced, open-circuit current is improved, and a back surface field passivation effect is optimized. Besides, through optimization of a coating technology, a layer of magnesium fluoride film is additionally arranged on the front surface and the back surface, so that the conversion efficiency of the cell is remarkably improved under the condition that the manufacturing cost is not increased, and the performance is remarkably improved.

A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

A solar cell, a cell string and a photovoltaic module, which belong to the technical field of solar cells. The solar cell comprises a cell body and a metal foil, wherein back surface grid lines are disposed on a non-illuminated surface of the cell body, and the metal foil is connected to the back surface grid lines. By means of disposing a layer of metal foil on a non-illuminated side of the cell body to connect to grid lines, relatively low line losses can be achieved when an aluminum back surface field is relatively thin or is even absent, or when a small amount of silver paste is used, thereby achieving fewer cuts during a preparation process, and reducing the loss of the solar cell without causing warping or an increase in costs.

The application belongs to the technical field of solar cells, and provides a preparation method of a crystalline silicon perovskite laminated solar cell, which comprises the following steps: preparing a P+ emitter on a front surface of an n-type crystalline silicon substrate; sequentially preparing tunneling silicon oxide and doped polycrystalline silicon on a back surface of the silicon substrate, and then selectively doping to form a heavily doped region, i.e. a selective back surface field; after preparing a first passivation layer and a second passivation layer, preparing a first metal electrode and a second metal electrode, i.e. a crystalline silicon bottom cell; sequentially preparing a laminated electron transport layer and a perovskite absorption layer on a front surface of a transparent adhesive layer; then preparing MoO x a hole transport layer by an electrochemical method; preparing a third metal electrode and a fourth metal electrode, i.e. a perovskite top cell; and laminating the perovskite top cell on the front surface of the crystalline silicon bottom cell by using the transparent adhesive layer. The method can solve the problem of a large number of light-generated carrier recombination losses in the existing laminated solar cell, improve the carrier collection capacity of the cell, and further improve the cell efficiency.

The invention relates to the technical field of semiconductor electronic devices, and provides a transverse PIN type photosensitive element, a preparation method thereof and a photosensitive detector. The transverse PIN type photosensitive element at least comprises an I-type layer which is provided with a first surface and a second surface which are oppositely arranged; the P-type layer is formed on the first surface of the I-type layer, and the upper surface of the P-type layer and the first surface of the I-type layer are located on the same plane; the N-type layer is formed on the first surface of the I-type layer, the upper surface of the N-type layer and the first surface of the I-type layer are on the same plane, and the I-type layer exists between the N-type layer and the P-type layer; and a passivation layer is arranged below the second surface of the I-type layer. According to the transverse PIN type light-sensitive element adopting the structure, an N-type back surface field is not designed on the back surface of the light-sensitive element, but the passivation layer is added, so that the response time of the transverse PIN type light-sensitive element can be greatly reduced, and meanwhile, the light current, especially the long-wave light current, in the transverse PIN type light-sensitive element is not influenced.

Discussed is a solar cell including a semiconductor substrate comprising a base region, an emitter region having a conductive type opposite to that of the base region, and a back surface field region having the same conductive type as the base region and a higher doping concentration than the base region, and a first electrode and a second electrode respectively connected to the emitter region and the back surface field region, wherein the base region has a specific resistance of 0.3 Ωcm to 2.5 Ωcm.

The present application provides a solar cell and a photovoltaic module. The solar cell comprises: a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface opposite to each other, the first surface comprises an electrode collection region, the electrode collection region comprises majority carrier regions and minority carrier regions alternately arranged at intervals in a first direction, and in the first direction, collection regions located at two opposite edges of a silicon wafer are both majority carrier regions; first doped semiconductor portions arranged in the majority carrier regions; and second doped semiconductor portions arranged in the minority carrier regions, wherein the second doped semiconductor portions have a conductivity type opposite to that of the first doped semiconductor portions. By means of the majority carrier regions arranged at the edge of the first surface, i.e., back surface field regions, which have the same conductivity type as the semiconductor substrate, there is no need to remove wrap-around plating of a passivated contact conductive structure or perform additional insulation processes, and a resistance-limiting effect caused by an emitter is avoided.

The invention relates to the technical field of double-glass photovoltaic module materials, and discloses a single-crystal double-sided double-glass photovoltaic module material which comprises upper-layer tempered glass, a first packaging layer, a solar cell, a second packaging layer, a third packaging layer and lower-layer glass. The solar cell comprises an aluminum back surface field, a silicon wafer, a diffusion layer, a passivation layer and a silicon nitride layer which are stacked in sequence, the silicon dioxide passivation layer serving as an internal material is added, sodium ions in upper-layer tempered glass and lower-layer glass can be prevented from migrating to the silicon wafer, so that excellent anti-PID performance is obtained, the passivation layer has a good passivation effect, and the service life of the solar cell is prolonged. In addition, ultraviolet light can be absorbed and converted into blue light capable of generating electricity through the light conversion film layer, it is guaranteed that the battery piece is not damaged by the ultraviolet light, meanwhile, the energy of the ultraviolet light can be utilized for efficiency improvement, and therefore the conversion efficiency of the device is greatly improved.

This invention belongs to the field of solar cell technology and relates to a method for fabricating heterojunction solar cells. The invention involves texturing a silicon wafer. An intrinsic amorphous silicon thin film and a p-type hydrogenated amorphous silicon oxide thin film are deposited on the front side of the texturized silicon wafer to form a pn heterojunction with separated photogenerated carriers. An intrinsic amorphous silicon thin film and an N-type hydrogenated amorphous silicon oxide thin film are deposited on the back side of the silicon wafer to form a back surface field, which helps to improve the open-circuit voltage and short-circuit current of the cell. A transparent conductive oxide thin film layer with conductive function is deposited on both the front and back sides of the silicon wafer to further improve the photoelectric conversion efficiency and stability of the cell. Grid electrodes are printed on the front and back sides of the silicon wafer and then sintered at low temperature to obtain the heterojunction solar cell. This invention simplifies the fabrication process of heterojunction solar cells by optimizing the fabrication steps and improves the production efficiency of heterojunction solar cells. Furthermore, the heterojunction solar cells prepared by this invention exhibit good stability.