8 results about "Back surface field" patented technology

A panel including at least one solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than −50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

Disclosed is a back contact solar cell. A back surface field region is arranged as a columnar hole structure, such that the thickness of a silicon substrate can be fully utilized to form a bottom region and a column wall back surface field region, the back surface field collecting area is increased without occupying additional back surface area, and the area of a back surface emitting region is maximized. Meanwhile, the back surface field region is deeply arranged into a silicon wafer, so that majority carriers can be collected in the silicon wafer, the transmission and collection distance is shortened, and the collection effect is enhanced. Thus, the structure can enhance the collecting of the minority carriers and the majority carriers, and the efficiency of the cell is overall improved.

This invention discloses an epitaxial structure of a triple-junction solar cell and its manufacturing method, comprising a first sub-cell, a second sub-cell, and a third sub-cell grown sequentially in layers; the second sub-cell includes an InGaAs base region, an InGaAs emitter region, a first back surface field layer, and a first window layer; the third sub-cell includes a GaInP base region, a GaInP emitter region, a second back surface field layer, and a second window layer; one or more of the first window layer, the second back surface field layer, and the second window layer are formed by multiple sets of alternately grown Al... x1 In 1‑x1 P layer, Al x2 In 1‑ x2 The superlattice structure consists of P layers, where 0.65 ≤ x1 ≤ 0.75, x2 = 0.4, and Al x1 In 1‑x1 Layer P is under tensile stress, Al x2 In 1‑x2 The P-layer is under compressive stress. In this application, the window layer and / or back field layer are set as a superlattice structure, which effectively improves the ability of the back field layer and / or window layer to confine charge carriers under high temperature environment while ensuring crystal quality.

In a solar cell, the back surface of a substrate thereof is provided with alternately distributed emitter zones and back surface field zones. An emitter is formed in each emitter zone, and the emitters are made of boron-doped monocrystalline silicon. A back surface field is formed in each back surface field zone; the back surface fields comprise tunneling oxide layers and polycrystalline silicon layers in stacked distribution, the polycrystalline silicon layers being made of phosphorus-doped polycrystalline silicon, and the tunneling oxide layers being located between a polycrystalline silicon layer and a polycrystalline silicon layer. Positive electrodes are electrically connected to the emitters, and negative electrodes are electrically connected to the back surface fields. In the described solar cell, the light-receiving area of the front surface can be expanded and the recombination rate of electron-hole pairs can be reduced, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

The invention provides a magnesium fluoride film crystalline silicon photovoltaic cell, a preparation method thereof and an electric device, and belongs to the technical field of photovoltaic cells. The magnesium fluoride thin film crystalline silicon photovoltaic cell structurally comprises a back metal electrode layer, a back SiNx passivation layer, a tunneling poly phosphorus-doped amorphous silicon layer, an N-si silicon substrate, a P + emitter layer, a positive SiNx passivation layer, a magnesium fluoride thin film and a front metal electrode layer from bottom to top in sequence. According to the magnesium fluoride thin film crystalline silicon photovoltaic cell provided by the invention, the magnesium fluoride thin film is newly added on the surface of the aluminum oxide, so that recombination of charges at an interface is effectively prevented, the service life of minority carriers is prolonged, charge transmission is enhanced, open-circuit current is improved, and a back surface field passivation effect is optimized. Besides, through optimization of a coating technology, a layer of magnesium fluoride film is additionally arranged on the front surface and the back surface, so that the conversion efficiency of the cell is remarkably improved under the condition that the manufacturing cost is not increased, and the performance is remarkably improved.

The application belongs to the technical field of solar cells, and provides a preparation method of a crystalline silicon perovskite laminated solar cell, which comprises the following steps: preparing a P+ emitter on a front surface of an n-type crystalline silicon substrate; sequentially preparing tunneling silicon oxide and doped polycrystalline silicon on a back surface of the silicon substrate, and then selectively doping to form a heavily doped region, i.e. a selective back surface field; after preparing a first passivation layer and a second passivation layer, preparing a first metal electrode and a second metal electrode, i.e. a crystalline silicon bottom cell; sequentially preparing a laminated electron transport layer and a perovskite absorption layer on a front surface of a transparent adhesive layer; then preparing MoO x a hole transport layer by an electrochemical method; preparing a third metal electrode and a fourth metal electrode, i.e. a perovskite top cell; and laminating the perovskite top cell on the front surface of the crystalline silicon bottom cell by using the transparent adhesive layer. The method can solve the problem of a large number of light-generated carrier recombination losses in the existing laminated solar cell, improve the carrier collection capacity of the cell, and further improve the cell efficiency.

The present application provides a solar cell and a photovoltaic module. The solar cell comprises: a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface opposite to each other, the first surface comprises an electrode collection region, the electrode collection region comprises majority carrier regions and minority carrier regions alternately arranged at intervals in a first direction, and in the first direction, collection regions located at two opposite edges of a silicon wafer are both majority carrier regions; first doped semiconductor portions arranged in the majority carrier regions; and second doped semiconductor portions arranged in the minority carrier regions, wherein the second doped semiconductor portions have a conductivity type opposite to that of the first doped semiconductor portions. By means of the majority carrier regions arranged at the edge of the first surface, i.e., back surface field regions, which have the same conductivity type as the semiconductor substrate, there is no need to remove wrap-around plating of a passivated contact conductive structure or perform additional insulation processes, and a resistance-limiting effect caused by an emitter is avoided.

This invention belongs to the field of solar cell technology and relates to a method for fabricating heterojunction solar cells. The invention involves texturing a silicon wafer. An intrinsic amorphous silicon thin film and a p-type hydrogenated amorphous silicon oxide thin film are deposited on the front side of the texturized silicon wafer to form a pn heterojunction with separated photogenerated carriers. An intrinsic amorphous silicon thin film and an N-type hydrogenated amorphous silicon oxide thin film are deposited on the back side of the silicon wafer to form a back surface field, which helps to improve the open-circuit voltage and short-circuit current of the cell. A transparent conductive oxide thin film layer with conductive function is deposited on both the front and back sides of the silicon wafer to further improve the photoelectric conversion efficiency and stability of the cell. Grid electrodes are printed on the front and back sides of the silicon wafer and then sintered at low temperature to obtain the heterojunction solar cell. This invention simplifies the fabrication process of heterojunction solar cells by optimizing the fabrication steps and improves the production efficiency of heterojunction solar cells. Furthermore, the heterojunction solar cells prepared by this invention exhibit good stability.