80 results about "High cell" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a specific front surface structure and a cell assembly thereof, and the specific front surface structure comprises a tunneling oxide layer and a specific doped amorphous silicon layer which are sequentially arranged on the front surface of a silicon substrate, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer and an oxygen-doped amorphous silicon layer are sequentially arranged in the specific doped amorphous silicon layer along the direction far away from the tunneling oxide layer, and the specific doped amorphous silicon layer is doped with a P element and contains an H element; the P doping concentration C1 of the low-doping amorphous silicon layer and the P doping concentration C3 of the oxygen-doping amorphous silicon layer are respectively smaller than the P doping concentration C2 of the high-doping amorphous silicon layer, and the specific front structure enables the back contact cell to absorb incident light within 400 nm, and the highest absorptivity exceeds 85%. The back contact battery disclosed by the invention can still keep good performance after being exposed to ultraviolet rays for a long time, the UV reliability of the battery is improved, meanwhile, high light transmittance is realized, and relatively high battery efficiency is also realized.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

Provided are methods for the creation of ultra-high density cryopreserved cell banks. In certain embodiments, these methods employ altered perfusion culture techniques that allow for production of ultra-high density cell cultures that can be cryopreserved at unexpectedly high cell densities without the need for any cell concentration steps, while retaining excellent cell viability and quality.

This invention discloses a multi-enzyme preparation for industrial cell dissociation, its usage method, and applications, belonging to the field of seed cell extraction technology for industrial meat culture. The invention employs a multi-enzyme preparation composed of component 1 and component 2; component 1 includes neutral protease, hyaluronidase, and elastase; component 2 includes matrix metalloproteinase, papain, and plasmin. The invention also discloses the preparation method and applications of the multi-enzyme preparation. The rational enzyme ratio and optimized treatment conditions of this invention help protect cell membrane integrity, maintain high cell activity, and significantly improve dissociation efficiency and cell recovery. The compound enzyme preparation is highly adaptable, applicable to various tissue types and dissociation requirements, and facilitates standardized and large-scale production. Combined with automated dissociation equipment, the compound enzyme preparation enables efficient and stable industrial operation, providing important technical support and broad application prospects for the cultured meat industry, tissue engineering, and cell therapy.

The invention discloses a method for low-density amplification of T cells and an obtained product, and belongs to the technical field of cell culture. The method comprises the following steps: activating a cell population containing T cells, and co-culturing with a lentiviral vector carrying a target gene for transduction; the method comprises the following steps: transduction is carried out on cells, then the transduction cells are inoculated into a shake flask at an inoculation density of not higher than 2 * 10 < 5 > cells / mL, shake culture is carried out to realize amplification, and amplification of 30-120 times can be realized. According to the method, a low-density cell microenvironment is optimized through dynamic oscillation, the problems of signal insufficiency, factor dilution and metabolism imbalance are solved, the efficiency bottleneck of traditional low-density amplification is broken through, and the method is suitable for large-scale production. The method has the beneficial effects of simplicity in operation, high cell product viability, high purity, low cost, wide scale adaptability and the like. The invention also provides a T cell product prepared by the method.

The invention provides a composite insulating layer of a light superconducting cable and a preparation method and application of the composite insulating layer. The composite insulating layer is prepared from the following raw materials in parts by weight: 40-60 parts of fusible polytetrafluoroethylene, 30-50 parts of fluorinated ethylene propylene, 0.5-5 parts of an auxiliary agent, 1-5 parts of filler and 0.1-0.6 part of a nucleating agent. The composite insulating layer of the light superconducting cable has relatively high tensile strength, relatively low dielectric constant and dielectric loss factor, good mechanical property and high insulating strength; compared with the prior art, the composite insulation layer has the advantages of low average cell diameter and high cell density, which indicates that a uniform and fine cell structure is formed in the composite insulation layer, the overall density of the material can be effectively reduced, the insulation layer is light, and the composite insulation layer can be applied to preparation of light superconducting cables for medical equipment and realizes integrity and low loss of high-frequency signal transmission.

The invention discloses a solar cell, a manufacturing method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell comprises a silicon substrate, a first passivation layer and an ultraviolet cut-off layer, the first passivation layer and the ultraviolet cut-off layer are arranged on the front face of the silicon substrate in a stacked mode, the ultraviolet cut-off layer is arranged on the side, away from the silicon substrate, of the first passivation layer, the ultraviolet cut-off layer comprises m sub-layers, and the refractive index and the thickness of each sub-layer are controlled, the principle that phase difference of incident light and reflected light on the two sides of the film is used for destructive interference is utilized, antireflection of light with the target wavelength is achieved, and the transmittance of the ultraviolet cut-off layer to light with the medium-long-section target wavelength is improved. Therefore, the problem that the short-circuit current density of the battery is reduced due to the fact that the ultraviolet cut-off layer absorbs ultraviolet light is solved. Therefore, the solar cell provided by the embodiment of the invention has relatively high cell efficiency while being capable of effectively resisting ultraviolet induced degradation.

The invention discloses an intracellular biomass detection method with small damage to cells and low disturbance, and relates to the technical field of cell detection. The invention provides the intracellular biomass detection method with small damage to cells and low disturbance, which depends on the integrated intracellular biomass detection device and adopts an electroporation sampling mode to carry out molecular sampling, so that the activity damage to the cells is avoided; electroporation sampling and nanopore detection are integrated, a one-way main flow channel of a Tesla valve structure is introduced in a matched mode so as to achieve physical communication and eliminate reverse flow on the fluid side, transfer is completed through a one-way path, the high cell viability is kept, and extracted biomolecules do not need to be manually transferred.

The application provides a kind of all-inorganic CsPbBr3 perovskite solar cell based on NH4Cl additive regulation and application thereof, SnO2 quantum dot solution is spin-coated on conductive film substrate to prepare electron transport layer, after preheating, spin-coat PbBr2 solution containing NH4Cl, annealing forms PbBr2 porous film, then spin-coat CsBr solution again to prepare CsPbBr3 perovskite film, scrape carbon electrode on the surface of CsPbBr3 film to prepare solar cell.The application adds NH4Cl in PbBr2 solution, and the porosity of PbBr2 film is regulated by the gas generated by the decomposition of ammonium chloride during annealing, so that the reaction is more complete, and it is beneficial to the growth of perovskite large grains.At the same time, chloride ions can passivate halogen vacancy defects.The solar cell of the application has good stability and high cell efficiency, and has important practical value and economic value for promoting the industrialization process of perovskite solar cell.

A cell group division method based on overburden remodeling coordination belongs to the field of cell group division in single-cell RNA sequencing data analysis, and comprises the following steps: firstly, constructing cell multi-fractal dimension characteristics for single-cell RNA sequencing data so as to better utilize different fractal dimension characteristic information; and then multi-fractal-dimension low-dimensional representation is extracted. Secondly, extracting multi-fractal-dimension fusion representation, multi-fractal-dimension remodeling representation and cross-fractal-dimension prediction representation by adopting an obstacle covering mechanism so as to improve the robustness of fractal-dimension remodeling; and optimizing the initial division loss to obtain the initial division of the cells. Then, a confidence weight is obtained based on the remodeling error, the division entropy, and the suspension to reduce the negative effects of the low-quality fractal dimension data. And the consistency and coordination of cell group division are ensured by minimizing the division loss target, and a final cell group division result is obtained. Compared with other methods, the cell group division accuracy is higher, and the performance is more stable.

The present invention relates to the technical field of state estimation of lithium batteries, and in particular to a state estimation and self-correction method and device for a lithium iron phosphate battery pack. The method comprises: performing real-time SOC estimation on a lithium iron phosphate battery pack; determining whether the average temperature T of the battery pack is abnormal; during charging, measuring in real time dU / dt of a battery cell having the highest cell voltage, if dU / dt is greater than or equal to i / 10, correcting an SOCR to 98%, and calculating a correction value e; during discharging, measuring in real time dU / dt of a battery cell having the lowest cell voltage; if dU / dt is less than or equal to i / 10, correcting an SOCR to 5%, and calculating the correction value e; correcting an SOH on the basis of the correction value e; and calculating an SOE of the battery pack on the basis of the SOCR. In the method, a correction point is added on the basis of the characteristic that a voltage suddenly changes in the first and final stages of charging and discharging, the cumulative error in an ampere-hour integral method is reduced, and an SOC, an SOH, and an SOE are corrected.

This invention provides a functional slurry and its preparation method, a coated separator, and a lithium-ion battery, belonging to the field of lithium-ion battery technology. The functional slurry prepared by this invention has a low film-forming temperature, stable colloidal particles, no agglomeration, stable coating adhesion, and good uniformity in peel strength. When coated on a separator substrate, it can impart heat-resistant safety performance or electrode adhesion characteristics to the separator: low thermal shrinkage rate at high temperatures, excellent electrode adhesion, high peel strength, and no coating powder shedding during processing. The functional coating prepared using this slurry is firmly bonded to the substrate surface, effectively improving the problem of large fluctuations in coating performance, especially peel strength, under different seasons, temperatures, and geographical conditions. This improves the consistency of coated separator products, improves the consistency of cell performance, increases the yield of separators and cells, and reduces the problem of high cell short-circuit rates caused by coating powder shedding.

A semiconductor device includes: an upper conductive line; and a first lower lead, a second lower lead, and a third lower lead arranged in the first direction. The semiconductor device further includes a lower active contact connected to one of the first lower conductive line, the second lower conductive line, and the third lower conductive line. Further, the semiconductor device includes a first high cell, a second high cell, a first small cell, and a second small cell disposed between the upper conductive line and the first lower conductive line, the second lower conductive line, and the third lower conductive line, and arranged in the first direction. Each of the first high cell and the second high cell includes a high pattern and a high source / drain pattern connected to the high pattern. Each of the first small cell and the second small cell includes a small pattern and a small source / drain pattern connected to the small pattern.

The invention belongs to a cell recognition technology, and particularly provides a cell focusing and detection method based on mixed learning, which comprises the following steps: A1, performing cell recognition in an initially focused image by using a depth target detection algorithm, and deleting bounding boxes of which the area is greater than a threshold ST to obtain bounding boxes of suspected cells; a2, performing automatic focusing on the cell surface by using a DCS focusing method; a3, performing information enhancement on the image; and A4, inputting the enhanced cell picture into a YOLO-DeCDIT (Yolo-DeCDIT) algorithm to carry out cell recognition and positioning, wherein the C2PSA module in the yolk is replaced by DeCDIT by the algorithm. The method has the advantages of high cell recognition accuracy and the like.

Provided are a bioreactor support structure and a bioreactor system for mass production of cells, including for production of cultured meat and for mass production of stem cells. The bioreactor support structure has an outer wall and a plurality of inner walls within an interior space created by an inner edge of the outer wall. The plurality of inner walls are configured to form a channel that accommodates a polymeric scaffold, cells, and a fluid. The cross-section of the channel may have approximately circular, elliptical, or polygonal cross-sectional areas. The configuration of the bioreactor support structure addresses the problem of high cell density pressures that hinder large-scale and commercial mass cell production.

To provide a surface structure for a cell culture substrate that exhibits high cell adhesiveness, and a cell culture chip.SOLUTION: A surface structure for a cell culture substrate is a surface on which cells are cultured, and the surface includes, at least in regions where the cells come into contact, recesses that allow biomolecules involved in cell adhesion to penetrate. The surface structure of the cell culture substrate is also a surface on which cells are cultured, and the surface includes, at least in regions where the cells come into contact, a plurality of protrusions that define valleys between the protrusions, the valleys being capable of receiving biomolecules involved in adhesion between the cells and the surface.SELECTED DRAWING: Figure 1

The application discloses a multi-cell digital light processing printer and method of light field-magnetic field coupling regulation. The application couples a magnetic field generating device with a light curing device, uses a magnetic field to control and replace microspheres with different cells and different magnetic contents in a tank, so that the replacement process is parallel to the printing process, and the printing efficiency is improved; meanwhile, the single-tank non-contact replacement is used, cross contamination is reduced, and multi-cell biological structures can be manufactured with high precision, high efficiency and high cell activity.

This invention discloses an ECL biosensor and its preparation and detection methods. The preparation method includes: preparing an electrode with PANI, an AuNPs solution, and an SA@Ru-M1 solution; adding the AuNPs solution to the surface of the electrode with deposited PANI and incubating; adding a pretreated SYL3C solution to the cleaned electrode surface and incubating to obtain an aptamer-modified electrode; immersing the aptamer-modified electrode in BSA solution; then adding the cell test solution to the electrode surface; after incubation at a constant temperature, performing cell fixation and permeabilization; finally, adding the SA@Ru-M1 solution to the electrode surface and incubating to obtain the ECL biosensor. The ECL biosensor prepared by this invention has high cell capture efficiency, high detection accuracy, and strong anti-interference ability, and can achieve highly sensitive and specific quantitative detection of MCF-7 cells.

The invention belongs to the technical field of microalgae processing, and particularly discloses a low-concentration acid coupled gas blasting microalgae wall breaking method which comprises the following steps: mixing microalgae and a low-concentration acid solution, putting the mixture into a pressure-resistant reactor, and sealing the reaction kettle; introducing gas into the reactor to increase the system pressure to a preset value; then heating the reaction system to a preset temperature, and carrying out a stirring reaction; after the reaction is finished, the reactor is subjected to rapid pressure relief, and the microalgae wall breaking process is completed through rapid expansion of dissolved gas. The method is used for microalgae wall breaking, conditions are mild, wall breaking efficiency is high, energy consumption is low, equipment requirements are simple, operation is safe, and the problems that in the prior art, wall breaking efficiency is low, conditions are harsh, and the method is not suitable for industrial production can be solved.

Provided are methods to reduce the thickness of a high-ĸ layer needed in a DRAM capacitor and, thus, allow the cell electrodes to be larger, giving higher cell capacitance. A tantalum nitride (TaN) layer is introduced as a liner in the capacitor hole before a titanium nitride (TiN) electrode layer. The TaN layer converts to a thin layer of tantalum oxide (Ta2O5), which permits a reduction in the high-ĸ layer thickness for the same capacitance versus leakage. Because this Ta2O5 is formed directly on the cell electrode, it ensures a low leakage film exists in the narrowest gaps even before the high-ĸ layer is deposited.

The application relates to the technical field of silicon nano array, and proposes a permeation passivation method for a silicon nano array, which comprises the following steps: dropping a passivation solution onto the surface of the silicon nano array, standing until permeation, and completing passivation. Through the technical scheme, 1) the passivation problem of the silicon nano array is solved, the silicon nano array prepared through physical etching and chemical etching is effectively and high-quality passivated, large-scale vacuum equipment required by an existing passivation scheme is eliminated, the process is simplified, the cost is reduced, and the safety is improved; 2) the silicon nano array is permeation passivated, so that the silicon nano array simultaneously has low reflection loss and low recombination loss functions, meets two necessary conditions of inverse Auger abnormal photovoltaic effect (that is, one photon generates two pairs of electron-hole pairs), the external quantum efficiency is greater than 100%, the SQ theoretical limit of the single-crystal silicon cell efficiency can be broken through, and higher cell photoelectric conversion efficiency can be obtained.

This invention relates to the field of chip screening technology, specifically to a method for screening USB flash drive chips. The method includes placing the chip to be tested in a first testing device to perform a low-level formatting test. The first testing device directly writes and stores the generated low-level formatting information within the chip. The chip is then transferred to a second testing device in a screening machine. The second testing device extracts and parses the pre-stored low-level formatting information within the chip to obtain the chip's test speed and capacity determination results. Finally, a robotic arm classifies and sorts the chips based on the low-level formatting information. This invention, by directly pre-storing key performance indicator data generated during the low-level formatting test in the first testing device, and then using the pre-stored information in the subsequent screening stage instead of performing redundant high-level formatting tests, significantly reduces the time a single chip spends in the screening process, effectively solving the industry pain point of low screening efficiency caused by the long time required for high-level formatting tests.

The invention discloses a high-stability groove type IGBT device and a preparation method thereof. Relates to the technical field of semiconductors. According to the structure with the narrow upper part and the wide lower part of the gate layer, the effectiveness of a vertical conductive channel is ensured, the resistance on a current conduction path is reduced, the advantages of the groove structure with high unit density are combined, the conduction voltage of the device is further reduced, and the conductive efficiency is improved. The reasonable layout of the P + region and the N + region and the optimization of the electric field distribution of the gate layer synergistically improve the overall electric field distribution of the device, avoid the problem of breakdown voltage drop caused by overhigh local electric field, ensure that the device has high breakdown voltage while reducing the break-over voltage, realize the consideration of low break-over loss and high voltage resistance, and improve the reliability of the device. And the harsh requirements of large and medium power application scenarios on the performance of the device are met.

This application provides a metal electrode, a crystalline silicon solar cell, and a fabrication method thereof, relating to the field of crystalline silicon solar cell manufacturing technology. The metal electrode fabrication method mainly involves coating a positive photoresist onto the surface of a substrate, shaping and photolithographically forming grooves corresponding to the pattern; using magnetron sputtering or reactive plasma deposition technology, a seed layer and a copper electrode are sequentially formed within the grooves, with the total height of the seed layer and the copper electrode being lower than the height of the positive photoresist layer. The crystalline silicon solar cell fabrication method mainly involves forming front and back metal electrodes using the metal electrode fabrication method described above; coating negative photoresist onto the front and back metal electrodes respectively, and removing the positive photoresist layer; forming an anti-reflection film and a passivation film on the front and back of the silicon substrate, and removing the negative photoresist layer. The metal electrode fabrication method, the crystalline silicon solar cell, and the fabrication method thereof result in excellent electrode quality, high aspect ratio, and high cell efficiency.

This invention relates to the field of battery manufacturing technology, specifically to a cell grouping method based on density clustering and batch feedback. The method is implemented through the following steps: obtaining and standardizing cell performance parameters; setting the required number of cells for a module, initializing the weighted feedback vector and the set of remaining cells; iteratively repeating the following steps: performing weighted DBSCAN clustering based on the current weights, dynamically setting the neighborhood radius; searching for the smallest cell subset within each cluster with a size greater than or equal to the current size to form candidate modules; terminating if the candidate modules are empty or the diameter of the optimal module is not less than the median diameter of the random subset; otherwise, outputting the module and removing used cells; updating the weights based on the standard deviation of the parameters of the removed cells. This invention eliminates the need for manually preset clustering parameters, improves cell utilization through parallel batch extraction and feedback mechanisms, avoids forced grouping, ensures high cell consistency within modules, and is suitable for efficient and high-quality automated grouping of various types of batteries.

The invention relates to the technical field of biomedicine, in particular to an organoid virus transfection method based on filter membrane mediation, which comprises the following steps: providing an organoid suspension which is mildly digested and retains part of matrigel; centrifuging in a container containing a microporous filter membrane, so that the organoid is flatly laid on the surface of the filter membrane to form a thin film; transferring the filter membrane bearing the organoid to an electric transfer device to be in contact with a virus vector, and applying an electric field to drive viruses to penetrate through the filter membrane and residual matrigel to enter cells; geometric shielding is eliminated through centrifugal tiling, and diffusion obstruction of matrigel is overcome through active transportation of electric field force; according to the method, the transfection efficiency and uniformity of the virus vector are remarkably improved on the premise of maintaining the integrity of the three-dimensional structure and high cell activity of the organoid, and the problem that the efficiency and the structure cannot be obtained at the same time in the prior art is solved.

This invention belongs to the field of solar cell manufacturing technology and relates to a method for producing an emitter and back-side passivated solar cell. The method involves texturing a silicon wafer to form a pyramidal textured surface, improving light capture efficiency and thus increasing the photoelectric conversion efficiency of the cell; diffusing and doping N-type impurities onto the front side of the texturized silicon wafer; etching the back side and edges of the diffused-doped silicon wafer to remove excess material and improve cell efficiency; depositing a silicon nitride film on the front and back sides of the etched silicon wafer, and depositing an aluminum oxide film on the silicon nitride film on the back side; creating rectangular grooves on the back side of the silicon wafer; printing sub-grid lines and main grid lines on the silicon wafer; and sintering the printed silicon wafer at high temperature to obtain the emitter and back-side passivated solar cell. This invention's method for producing emitter and back-side passivated solar cells has a relatively simple manufacturing process and high cell efficiency.

The invention discloses a PP / IFR / SiO2 microporous flame-retardant foam material as well as a preparation method and application thereof. The material is prepared from polypropylene (PP), an intumescent flame retardant (IFR) and nano silicon dioxide (SiO2) through melt blending and supercritical fluid foaming processes. Wherein the nano SiO2 is used as a nucleating agent and a flame-retardant synergist, so that the foam structure is remarkably improved, the foam size is smaller, the foam density is higher, the nano SiO2 and the IFR generate a synergistic effect, and the flame-retardant property of the material is greatly improved. The invention has the characteristics that the flame retardant property of the prepared microcellular foaming material is superior to that of an unfoamed solid material with the same proportion, and the industrial problem that the flame retardant property is reduced due to microcellular foaming is effectively solved. The material has a wide application prospect in the fields with high lightweight and flame-retardant requirements.

The invention relates to a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a silicon substrate, the silicon substrate is provided with a first surface and a second surface opposite to the first surface, a first passivation layer and an N-type doped silicon layer are sequentially stacked on the first surface, and a second passivation layer and a P-type doped silicon layer are sequentially stacked on the second surface; at least one of the N-type doped silicon layer and the P-type doped silicon layer comprises a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked in the direction away from the silicon substrate, and the crystallization rates of the first sub-layer, the second sub-layer and the third sub-layer are a1, a2 and a3 respectively and meet a1gt; a2gt; a2gt; a3, a1 / a2 = k (a2 / a3-b) + c, k = (0, 1), b is 1-1.41, and c is 1-1.41. The solar cell has high short-circuit current and passivation performance, and further has high cell efficiency.

This invention relates to the field of data storage technology, providing an 8.5T non-volatile random access memory (NVSRAM) cell, a memory, and a data storage method. It combines 6T SRAM cells connected to an isolation transistor to form an NVSRAM cell. This method uses fewer transistors, has a smaller chip area, and achieves high cell storage density. The data retrieval process of the NVSRAM cell does not require power-down of the SRAM cell, discharge of the data nodes, or power-on of the SRAM cell. The retrieval process is completed simply by writing data 0 to the data nodes QB of all SRAM cells, writing data 1 to the data nodes Q, and then opening the isolation transistor to write the data from the FLASH cell to the SRAM cell. This retrieval method is simple and efficient, simplifies the design of related peripheral circuits, and effectively reduces the chip manufacturing cost of NVSRAM.