253results about How to "Improve electrical performance" patented technology

The wire harness comprises a main plug, a plurality of connecting holes and a plurality of conductive sleeves are arranged on the plug, each conductive sleeve comprises a vertical connecting part and a plurality of elastic sheets, the elastic sheets are annularly arranged outside the vertical connecting part at intervals and connected with the vertical connecting part, and the sides, close to orifices of the connecting holes, of the elastic sheets incline outwards. The conductive sleeve is inserted into the connecting hole, and the elastic sheet deforms under the action of the outer wall of the connecting hole and abuts against the outer wall of the wire harness core. When the conductive sleeve and the wire harness are synchronously inserted into the connecting hole, the elastic sheets deform towards the inner side of the connecting hole under the action of the hole wall of the connecting hole and are pressed on the wire harness core, so that the wire harness is locked by using the plurality of elastic sheets, the mechanical locking capability of the conductive sleeve on the wire harness is optimized, and the connection reliability is improved; and the plurality of elastic sheets enclose to form the side wall matched with the hole wall of the connecting hole under the action of the connecting hole, so that the contact area between the elastic sheets and the wire core is increased, and the electrical performance is improved.

This invention relates to an insulating oil and an oil-paper insulation system containing superhydrophobic nanoparticles, as well as their preparation method and application, belonging to the field of electrical equipment insulation technology. This invention provides an insulating oil containing superhydrophobic nanoparticles, wherein the superhydrophobic nanoparticles are silane-modified nanoparticles, and the nanoparticles include at least one of SiO2, TiO2, and h-BN; the insulating oil includes at least one of mineral insulating oil, synthetic insulating oil, and natural ester insulating oil. This invention achieves the superhydrophobicity of the nanoparticles and good compatibility with the oil phase through silane modification. Adding silane-modified nanoparticles to the insulating oil effectively reduces the water content of the insulating oil and optimizes the interfacial performance of the oil-paper. Combined with the low-temperature, high-efficiency, and uniform rapid impregnation process of this invention, the overall electrical performance and service life of the oil-paper insulation system are significantly improved.

The application discloses an environmental protection gas load switch and belongs to the electrical equipment field, which is used to solve the problem of how to inhibit or eliminate the arc generated when the static contact and the moving contact of the load switch are disconnected. The environmental protection gas load switch comprises a shell, a moving contact, an operating mechanism, a first static contact and an arc extinguishing device. The moving contact is rotatably arranged in the interior of the shell, the operating mechanism is used for controlling the rotation of the moving contact, and the first static contact is fixedly arranged in the interior of the shell. The arc extinguishing device comprises a shell body, a rotating arm, a vacuum bubble and a reset spring, the shell body is fixedly arranged on the shell, the rotating arm is rotatably arranged on the shell body and is provided with an electrically conductive part, the electrically conductive part is arranged on the rotating path of the moving contact, the vacuum bubble is arranged on the shell body, and the two ends of the vacuum bubble are electrically connected with the electrically conductive part and the first static contact respectively, and the reset spring is arranged between the rotating arm and the shell body. When the moving contact is disconnected with the first static contact, the moving contact is electrically connected with the electrically conductive part.

This invention provides a surface acoustic wave (SAW) filter, comprising a piezoelectric layer and interdigitated electrodes. The interdigitated electrodes are disposed on the piezoelectric layer and include at least a first metal layer and a second metal layer stacked together. The first metal layer is made of platinum or an alloy with platinum as the main component, and the second metal layer is made of aluminum or an alloy with aluminum as the main component. By setting the material of the second metal layer to aluminum or an alloy with aluminum as the main component, the uniformity of metal coverage of the electrode structure can be effectively improved, avoiding excessive local resistance or structural defects caused by poor coverage. Setting the material of the first metal layer to platinum or an alloy with platinum as the main component provides reliable support for the second metal layer, reducing the risk of deformation or corrosion of the aluminum layer in subsequent processes. By using a stacked structure of two complementary materials for the interdigitated electrodes, both structural miniaturization and improved overall electrical performance and structural reliability of the interdigitated electrodes are achieved.

The invention discloses a p-channel gallium nitride transistor and a preparation method thereof, and relates to the technical field of semiconductor devices. The p-channel gallium nitride transistor comprises a substrate; the barrier layer and the p-type gallium nitride layer are located on one side of the substrate; the p-type gallium nitride layer and the barrier layer form a hole heterojunction structure; the p-type gallium nitride layer comprises a first groove, and a first bulge and a second bulge which are positioned on two opposite sides of the first groove; the ratio range of the thickness L1 of the groove bottom of the first groove to the thickness L2 of the p-type gallium nitride layer at the first bulge and / or the second bulge is 1 / 14 < = L1 / L2 < = 3 / 14; a depletion layer located in the first groove; the depletion layer comprises a titanium metal layer and a titanium nitride layer which are laminated, and the titanium nitride layer is located between the titanium metal layer and the p-type gallium nitride layer; the source electrode and the drain electrode are located on the sides, away from the substrate, of the first protrusion and the second protrusion respectively; the grid electrode is located in the first groove and located on the side, away from the p-type gallium nitride layer, of the depletion layer. The stability and the electrical performance of the transistor are improved.

The invention relates to a high-entropy ceramic capacitor, a ceramic dielectric material for the high-entropy ceramic capacitor and a preparation method, the raw material composition of the ceramic dielectric material comprises NaNbO3, (Na0. 2Bi0. 2Ba0. 2Mg0. 2Zn0. 2) TiO3, H3BO3, CaZrO3 and the like, by controlling the raw material ratio and preparation process parameters of sodium niobate and adopting a multi-step grinding synthesis method, NaNbO3-based high-entropy ceramic is designed, so that the insulation resistance of the high-entropy ceramic capacitor is effectively improved; on the other hand, chemical modification treatment is carried out by introducing (Na0. 2Bi0. 2Ba0. 2Mg0. 2Zn0. 2) TiO3, H3BO3, CaZrO3 and the like, so that the structural stability of an antiferroelectric phase is enhanced, the compactness of the material is improved, and finally, the energy storage performance of the material is optimized and improved.

The invention relates to a welding strip obtaining method and a welding method of a solar cell piece. The welding strip obtaining method comprises the following steps that effective welding parameters of a welding device are obtained; obtaining effective geometric parameters of the solder strip; based on the effective welding parameters and the effective geometric parameters, the yield strength range matched with the welding strip is obtained; and based on the yield strength range, a welding strip matched with the welding device is selected. According to the solder strip obtaining method and the welding method of the solar cell, the pseudo soldering rate of the solder strip is remarkably reduced, the solder strip is prevented from plastic deformation, cross section area reduction or snap due to overlarge wire winding tension, and the resistance of the solder strip is prevented from being increased, so that the welding quality and the electrical performance are improved.

The invention provides a low-water-absorption glass bead modified PBT (polybutylene terephthalate) material and a preparation method thereof. The low-water-absorption glass bead modified PBT material comprises the following components in parts by weight: 70-100 parts of PBT resin; 0 to 30 parts of solid glass beads; 0-5 parts of a toughening agent; 0-2 parts of an antioxidant; 0-2 parts of a lubricant; 0-2 parts of black color master batch; 0-2 parts of a coupling agent; 0-5 parts of polytetrafluoroethylene wax; wherein the average particle size of the solid glass beads is 1-50 [mu] m; the average particle size of the polytetrafluoroethylene wax is 3-15 [mu] m, and the weight-average molecular weight of the polytetrafluoroethylene wax is 10000-30000 g / mol; the weight ratio of the solid glass beads to the polytetrafluoroethylene wax is (5-10): 1. According to the invention, the polytetrafluoroethylene wax is added into the solid glass bead modified PBT material, so that the shrinkage difference between the material flow direction and the vertical flow direction is effectively reduced, the water absorption rate of the material is remarkably reduced, the preparation process is simple, and the production process is easy to control.

This application relates to the field of battery technology, and more particularly to a battery management component and battery pack. The battery management component includes a battery management module, which comprises: a BDU component, the BDU component including a housing and a relay module, the relay module being located within the housing; and a BMS slave board assembly, located above the BDU component along the height direction of the battery pack. The BMS slave board assembly includes a BMS cover and a slave circuit board, the BMS cover being disposed on the housing, and a cavity being formed between the BMS cover and the housing, with the slave circuit board located within the cavity. This application is beneficial for improving the energy density of the battery pack.

This utility model relates to the field of cable manufacturing technology and discloses a multi-layer cooling device for cable manufacturing. The device includes a water tank filled with cooling water at the bottom. Three guide wheels are rotatably mounted inside the tank, guiding the cable in three horizontal sections: upper, middle, and lower. Inside the tank, two annular seats and two annular channels are fixedly mounted via support beams. The upper horizontal section passes through the upper aligned annular seats and channels, the middle horizontal section passes through the lower aligned annular seats and channels, and the lower horizontal section passes through the cooling water. Conveying components are rotatably mounted between the aligned annular seats and channels. This utility model, by setting up three horizontal cable paths (upper, middle, and lower) and combining air pump jets, submersible pump water jets, and immersion cooling, achieves multi-layer gradient cooling of the cable, solving the problems of slow cooling speed and uneven temperature distribution in traditional single-layer water tanks, and avoiding residual internal stress within the insulation layer.

The application discloses a preparation method of elastic semiconductor fibers and application thereof, and belongs to the field of flexible electronic materials. In view of the fact that existing semiconductor fibers are difficult to meet the demand of wearable electronics on elasticity and electrical stability, the application proposes a general method containing material compatibility driven synergistic co-spinning, anti-solvent regulated nano-phase separation and swelling induced post-crosslinking, and successfully prepares semiconductor fibers with high elasticity and high electrical performance. The breaking strain of the fiber can be more than 860%, and the fiber still has almost complete elastic recovery ability under a strain of up to 500%. After the introduction of an insulating elastomer, the electrical performance of the composite fiber is even improved. The method is suitable for various conjugated polymer systems, and the obtained elastic semiconductor fibers can be used for constructing biosensors and three-dimensional thermoelectric fabrics, and provides a general elastic semiconductor fiber construction strategy for realizing a wearable electronic system with high performance and strong conformability.

The utility model discloses an additional line grounding suspension device relates to electrified railway suspension device technical field. The device includes triangle connecting plate, corner hanging plate, casing and prestranded wire clamp. Triangle connecting plate has mounting hole, and upper mounting hole is connected through bolt with suspension crossbeam, and lower mounting hole is riveted connection through expansion pin with corner hanging plate upper mounting hole, and corner hanging plate lower mounting hole is connected through expansion pin with casing, and casing outside winding has prestranded wire clamp with ground wire, and ground wire is connected with the fastening bolt of suspension crossbeam. The utility model provides an additional line grounding suspension device, connects through expansion pin and adds the self -lubricating bushing of anti -wear, has reduced the structure clearance of connecting position, has improved the electrical performance of suspension device connecting position leak -flow channel, has realized the stable reliable ground function, has reduced the number of parts, has improved the installation efficiency of high altitude construction operation, has reduced the construction difficulty.

This invention discloses a glass powder for the main grid paste of TOPCon crystalline silicon solar cells and its preparation method. The glass powder is obtained by mixing glass frits A and B obtained after cold rolling at a mass ratio of 1.5 to 2:1, followed by secondary melting and cold rolling. Glass frit A includes PbO, SiO2, B2O3, Li2O, Na2O, etc., and glass frit B includes Bi2O3, SiO2, AgNO3, B2O3, Li2O, Na2O, etc. Distilled water is added to glass frit B during the batching process to fully combine AgNO3 with other oxides, and the mixture is dried to a viscous state before sintering. During the sintering process, laser-enhanced contact optimization technology is used to reduce AgO in the glass to silver microcrystals, thereby improving the electrical performance of the main grid lines. The printed solar cells exhibit reduced damp heat decay, resulting in high module reliability and improved photoelectric conversion efficiency while ensuring high welding tensile strength. The resulting glass powder does not excessively etch the silicon nitride and aluminum oxide passivation layers, and the prepared slurry can be sintered at 650-800℃, which can meet the requirements of the front and back main grid electrodes of TOPCon batteries.

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.

The invention relates to an energy storage device and a power utilization system. The energy storage device comprises a shell, an electrode assembly, an end cover assembly and a binding piece, wherein the shell is provided with an accommodating cavity; the electrode assembly is arranged in the accommodating cavity, the electrode assembly comprises a plurality of tabs and an electrode main body which are electrically connected, and the tabs and the electrode main body are arranged along a first direction; the end cover assembly is arranged on one side of the shell and used for sealing the containing cavity. The binding piece is positioned between the end cover assembly and the electrode main body; the binding piece is provided with a penetrating hole, and the penetrating hole penetrates through the two opposite surfaces of the binding piece in the first direction. The penetrating hole extends along a second direction, the plurality of tabs penetrate through the penetrating hole, and the first direction is intersected with the second direction; the penetrating hole is provided with a first side wall and a second side wall which are oppositely arranged in the second direction, and in the second direction, the distance between the first side wall and the second side wall is larger than the size of the ends, close to the electrode body, of the tabs.

The utility model provides a vibrating diaphragm, which belongs to the technical field of vibrating diaphragms, and comprises at least one bonding layer, at least one side of each bonding layer is provided with a conductive layer, the connecting surface of the conductive layer and the bonding layer is a roughening treatment surface or a surface activation treatment surface, and the bonding layer and the conductive layer are in hot-pressing composite connection or bonding connection. According to the utility model, the bonding layer and the conductive layer are directly compounded, so that the requirement of bonding strength is met, the process is simplified, the problem of insufficient thickness of a magnetron sputtering coating can be effectively solved, and the negative influence of a glue bonding process on the compliance of the vibrating diaphragm can be avoided; therefore, the light weight of the planar diaphragm structure, the high sensitivity of the performance and the simplification of the manufacturing process are realized.

The present application relates to the technical field of epoxy sleeve, and particularly relates to a stable pressure injection APG pouring process for an epoxy sleeve with a metal insert, which comprises the following steps: S1, epoxy paste is injected into an injection pipeline under pressure, the paste enters a mold cavity through an injection port, and the pressure of the epoxy paste under pressure is P1; S2, the paste temperature of the injection pipeline is monitored during the injection process, and the paste temperature is controlled to be T; S3, the paste pressure P2 at the front end of the injection port is monitored during the injection process, when P2 decreases, the pressure of the epoxy paste under pressure is controlled to be P1+Delta P, and the paste temperature is controlled to be T+Delta T; S4, the paste flow at the front end of the injection port is monitored during the injection process, and the injection amount in the cavity is controlled to be consistent; and S5, a mold heating system is used to heat the mold, the mold is opened after heating, and a product is obtained through secondary curing. The present application can solve the technical problems of the APG pouring process, such as injection pressure fluctuation of the injection port, improve product quality, and save production cost.

The application provides a semiconductor device and a preparation method thereof. The method comprises the following steps: providing a substrate, forming a trench extending from a first surface of the substrate to an interior of the substrate, forming a shielding dielectric layer at a bottom and a part of a sidewall of the trench, and forming a shielding gate in the trench. The shielding gate fills a part of the trench, a top surface of the shielding gate is higher than a top surface of the shielding dielectric layer, and a distance from the top surface of the shielding dielectric layer to the first surface is a first depth. A part of the shielding gate is etched to make the top surface of the shielding gate flush with the top surface of the shielding dielectric layer, and a predetermined thickness of the substrate is etched from the first surface to make the distance from the top surface of the shielding dielectric layer to the first surface a second depth. The first depth is greater than the second depth. An inter-gate dielectric layer and a control gate structure are formed in the trench. The method of the application etches a predetermined thickness of the substrate while etching the shielding gate, thereby effectively reducing a high-density plasma filling aspect ratio, and further increasing a filling window and improving a filling effect.

This invention provides a positive electrode active material and its application. The positive electrode active material of this invention comprises matrix particles including lithium metal oxide and a graphite coating layer covering at least a portion of the surface of the matrix particles; the lithium metal oxide has the structure shown in Formula 1; in the X-ray diffraction pattern, the lithium metal oxide is a cubic crystal system in space group Cmca, and has a 002 peak with a 2θ of 17.9°–18.1° and a 131 peak with a 2θ of 67.0°–67.5°; Li n‑y Na y Co 1‑a M a O2, Equation 1, where 0.6 ≤ n ≤ 0.8, 0 < y ≤ 0.05, 0 ≤ a < 0.2; and M is a doping element. The unique composition and crystal structure of this positive electrode active material help improve the battery's specific capacity and cycle performance, especially under high-voltage conditions, enabling the battery to maintain excellent performance.

The application discloses a driving backboard, a preparation method thereof and a display panel. The driving backboard comprises a substrate, an active layer, a source electrode, a drain electrode, a gate electrode, a metal oxide barrier portion and a transparent electrode arranged on the substrate. The source electrode and the drain electrode are arranged on the active layer and connected with the active layer respectively. The gate electrode is located on one side of the active layer close to or away from the source electrode. The metal oxide barrier portion is arranged on one side of the source electrode away from the active layer, covers the source electrode and is in contact with the surface of the source electrode. The transparent electrode is arranged on one side of the drain electrode away from the active layer and connected with the drain electrode. The application reduces the process manufacturing cost of the driving backboard under the premise of improving the electrical performance of the thin film transistor.

The invention relates to a cell grid line transfer printing device and method. The device comprises an unwinding assembly and a winding assembly and is used for conveying the patterned transfer printing film. The visual inspection assembly is used for acquiring position information of the film and the battery piece; a carrying platform of the pasting bearing platform is used for bearing the battery piece and is driven by a first moving part to realize horizontal movement and movement perpendicular to a film surface so as to finish alignment and pasting; and the pressing roller assembly comprises a heating roller, a first temperature control part used for accurately controlling the temperature and a pressure adjusting part used for adjusting the pressure so as to complete hot pressing transfer printing. The device can also comprise a movable heating plate for preheating the film, a carrying table temperature control part for preheating the battery piece, and a vacuum adsorption and liftable carrying table for fixing the battery piece. The corresponding method comprises the steps of battery piece feeding and alignment, vertical attachment, heating and rolling and base film removal, and can comprise the step of preliminary pressing, and the alignment precision, the hot-pressing uniformity and the production efficiency of transfer printing can be improved.

The application relates to the technical field of vehicles, and particularly provides a relay, a battery power distribution unit and a vehicle. The relay comprises a shell, a contact head, a main body part and a connecting part. Part of the main body part is exposed to the shell, the connecting part is connected to one end of the main body part away from the shell, and the length of the part of the main body part exposed to the shell is d1 in the extension direction of the contact head, and d1>2 mm. The application increases the length of the part of the main body part exposed to the shell, increases the distance between the connecting part and the shell, the heat generated during welding is not easily quickly transmitted to the shell and the internal structure, and the dangerous temperature reached by the shell and the internal structure during the welding process is reduced. It has been verified that when d1>2 mm, the temperature transmitted to the shell and the internal structure during welding is less than 100 DEG C, the damage risk of the shell and the internal structure of the relay during welding is as small as possible, the possible faults and safety risks of the relay during use are reduced, and the overall reliability and service life of the relay are improved.

The present disclosure relates to a complex-phase ceramic and a preparation method and application thereof, the electrical performance of the ceramic single crystal boundary is improved by introducing yttrium element and complex phase, and then the electrical performance of the entire ceramic system is improved; the prepared yttrium element doped calcium copper titanate and strontium copper titanate complex phase ceramic system has excellent breakdown field strength and giant dielectric performance, and can improve the performance of capacitor energy storage elements, memory functional devices, multilayer ceramic capacitors and other functional devices.

This invention provides a capacitor structure and a method for manufacturing the same. The capacitor structure includes a bottom electrode, an insulating layer, a top electrode, and an interface layer. The insulating layer is disposed on the bottom electrode. The top electrode is disposed on the insulating layer. The interface layer is disposed between the insulating layer and the top electrode. The interface layer has at least one element that is the same as the element contained in the insulating layer, and at least one element that is the same as the element contained in the top electrode.

The application discloses a kind of corrosion-resistant shielding cover, be provided with first shielding cover and second shielding cover, the first shielding cover and second shielding cover between being provided with assembly component, the first shielding cover is provided with first shielding space, the second shielding cover is provided with second shielding space, the first shielding space and the second shielding space for electrical component shielding high-voltage arc are provided with partition, both ensure the structural stability under high pressure environment, and simplify field installation process, partition is guided assembly by hollow groove and adaptive groove, precise positioning is realized, its lifting jack is convenient for operator to operate dismounting, maintenance efficiency is significantly improved, the setting of assembly flange and locking bolt enhances the adaptability with other electrical components, and the design of reinforcing plate embedding assembly side groove is targetedly strengthened local structural strength, effectively resist high-voltage arc impact.

The utility model relates to the technical field of cable manufacturing equipment, and provides an improved overhead insulated wire conductor stranding device of a tubular strander, which comprises a base, a stranding cage is fixed on one side of the top of the base, a take-up reel is fixed on the other side of the top of the base, an adjusting assembly is fixed on the side face of the stranding cage, and the adjusting assembly is fixed on the other side of the top of the base. A tension assembly is installed on the side, close to the take-up reel, of the stranding cage, the adjusting assembly comprises a motor, a rotating shaft is fixed to the output end of the motor, and a driving bevel gear is fixed to the outer side of the rotating shaft. According to the technical scheme, the problems that in the prior art, when an improved overhead insulated wire conductor stranding device of a tubular strander is used, the stranding pitch in the stranding device cannot be controlled and adjusted in real time according to the actual production situation, the rotating speed of a stranding cage is matched with the traction speed, the stranding pitch of a stranded wire is unstable, and the stranding efficiency is poor are solved. And therefore, the electrical performance and the strength of the wire are influenced.

The utility model discloses a heating tube sealing structure and baking tray, aim at solving the existing heating tube seal not thoroughly, the assembly stability is poor and so on. The structure contains heating disc, its inside is equipped with magnesium oxide filler, and the first, second heating tube cold needle is projected with respectively two ends, and there is the heating wire that penetrates heating disc and is wrapped by magnesium oxide filler between two cold needles. In addition, still be equipped with first conducting rod subassembly and second conducting rod subassembly, two respectively with the both ends sealed connection of heating disc. This design through both ends conducting rod subassembly and the close seal of heating disc, can bear the gas expansion pressure in pipe, prevent gas leakage, maintain the pressure balance in pipe, enhance the sealing reliability, effectively solve the sealing problem caused by gas expansion. Meanwhile, the structure reduces the dependence on the size precision of single component, even if the size error exists in component processing, can realize good sealing connection, reduces the unstable situation of assembly caused by size deviation, improves the stability and success rate of assembly.

The utility model provides a single-sided board multiplexing structure applied to a wireless charging system. The single-sided board multiplexing structure comprises a first single-sided FPC board which comprises a first copper layer, a first base film and a cover film; the second single-sided FPC board comprises a second copper layer, a second base film and a covering film; the thickness of the bonding layer is 3-8 microns, and the bonding layer is located between the first single-face FPC board and the second single-face FPC board and used for fixing the first single-face FPC board and the second single-face FPC board; and the copper layers of the first single-sided FPC board and the second single-sided FPC board are respectively positioned on the outer sides, and interlayer conduction is realized through the bonding layer. According to the utility model, two single-sided boards are overlapped to replace a traditional double-sided board structure, so that the material cost is reduced by more than 25%; through hole electroplating (PTH), double-side etching and other complex processes are omitted, the production process is simplified, and the comprehensive cost is reduced by 18%-22%; the single-sided board is processed in a split manner, so that the alignment error of double-sided imaging is avoided, and the yield loss is reduced; interlayer conduction is achieved through filling of the conductive adhesive or the solder, a traditional electroplating process is replaced, and the process complexity and the defect risk are reduced.

The utility model is suitable for printed circuit production and processing field, provides a kind of buried inductance PCB's compression structure, including PCB body and be located on the blind slot of PCB body, the blind slot is used to accommodate inductive component device;The periphery of the blind slot is equipped with blind slot edge clamping point, and the blind slot edge clamping point is used to limit the inductive component device;The bottom of the blind slot is equipped with blind slot bottom protrusion in the middle, and the blind slot bottom protrusion is the structure of ladder, is used to support the inductive component device.The utility model improves the compression precision and reliability of buried inductance PCB by optimizing blind slot structure design, solves the problem of uneven glue filling and device deviation, has remarkable economic value and market prospect.

This application proposes a modified polyimide composite material and its preparation method, belonging to the field of polymer composite material technology, to solve the problems of poor thermal conductivity of existing PI materials, the need for blending with fillers to improve thermal conductivity, and the resulting interfacial compatibility issues and damage to the material's physical properties. The modified polyimide composite material includes a polyimide matrix and a three-dimensional covalently bonded hybrid network dispersed within the polyimide matrix. The surface of the three-dimensional covalently bonded hybrid network is modified with unreacted carboxyl groups and / or amino groups, which can form chemical bonds with the polyimide matrix. The three-dimensional covalently bonded hybrid network is composed of one-dimensional carbon nanotubes and two-dimensional boron nitride nanosheets covalently linked by bifunctional bridging molecules, and the bonding between the bifunctional bridging molecules and the carbon nanotubes and / or boron nitride nanosheets includes dynamic covalent bonds. The carbon nanotubes and / or boron nitride nanosheets are modified with amino groups. This network synergistically improves the mechanical, thermal, and electrical properties of the composite material.