23526 results about "Thermal stability" patented technology

Based on the above and on the remarkable properties of the 2′-O,4′-C-methylene bridged LNA monomers it was decided to synthesise oligonucleotides comprising one or more 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer(s) as the first stereoisomer of LNA modified oligonucleotides. Modelling clearly indicated the xylo-LNA monomers to be locked in an N-type furanose conformation. Whereas the parent 2′-deoxy-β-D-xylofuranosyl nucleosides were shown to adopt mainly an N-type furanose conformation, the furanose ring of the 2′-deoxy-β-D-xylofuranosyl monomers present in xylo-DNA were shown by conformational analysis and computer modelling to prefer an S-type conformation thereby minimising steric repulsion between the nucleobase and the 3′-O-phopshate group (Seela, F.; Wömer, Rosemeyer, H. Helv. Chem. Acta 1994, 77, 883). As no report on the hybridisation properties and binding mode of xylo-configurated oligonucleotides in an RNA context was believed to exist, it was the aim to synthesise 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer and to study the thermal stability of oligonucleotides comprising this monomer. The results showed that fully modified or almost fully modified Xylo-LNA is useful for high-affinity targeting of complementary nucleic acids. When taking into consideration the inverted stereochemistry at C-3′ this is a surprising fact. It is likely that Xylo-LNA monomers, in a sequence context of Xylo-DNA monomers, should have an affinity-increasing effect.

A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula SialphaObetaCxHy (alpha, beta, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M_p(NR⁴R⁵)_q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R¹ and R³ each represents C_1-6 alkyl, etc.; R² represents C_1-6 alkyl, etc.; R⁴ and R⁵ each represents C_1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)

An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.

Thermally stable diamond constructions comprise a diamond body having a plurality of bonded diamond crystals and interstitial regions disposed among the crystals. A metallic substrate is attached to the body. The body includes a first region substantially free of a catalyst material that extends a partial depth from a surface into the body, and a second region that includes the catalyst material. The body can include natural diamond grains and/or a blend of natural and synthetic diamond grains, and is treated to form the first region. Before treatment, a portion of the body to be treated is finished to an approximate final dimension so that the depth of the first region of the finished product is substantially the same as when treated. During treatment, catalyst materials as well as non-catalyst metallic materials are removed from the diamond body to provide a further enhanced degree of thermal stability.

The present invention provides spin valve with a magnetic compensation field which couples to the pinned layer and counteracts sensing current induced magnetic field. The spin valve sensor of the present invention may be formed having a structure comprising: a free layer, a first spacer layer, a pinned layer, a pinning layer, a second spacer layer, and a compensation layer. The compensation layer may be formed of ferromagnetic material with its magnetization set so that the compensation field oriented in a reinforcing relationship with the magnetization of the pinned layer. Current through the compensation layer and the spacer layer may add to the compensation field. The spacer layer may be formed of a nonmagnetic material of sufficient thickness to prevent interaction between the pinning layer and the compensation layer while providing a sufficiently small distance to allow sufficient magnetic coupling to the pinned layer. The present invention may be used to improve thermal stability and reduce Barkhausen noise while not impacting output symmetry.

Thermally-stable polycrystalline diamond materials of this invention comprise a first phase including a plurality of bonded together diamond crystals, and a second phase including a reaction product formed between a binder/catalyst material and a material reactive with the binder/catalyst material. The reaction product is disposed within interstitial regions of the polycrystalline diamond material that exists between the bonded diamond crystals. The first and second phases are formed during a single high pressure/high temperature process condition. The reaction product has a coefficient of thermal expansion that is relatively closer to that of the bonded together diamond crystals than that of the binder/catalyst material, thereby providing an improved degree of thermal stability to the polycrystalline diamond material.

A method for maximizing the interfacial properties of magnetoresistive sensors, such as spin valve and GMR sensors used in storage devices, comprises selecting the materials for ferromagnetic layers and for electrically conductive spacers that are interposed between the ferromagnetic layers. The electronegativities of the selected materials are substantially matched so that an absolute value of the differences in electronegativities is minimized. The conductive spacer material provides a relatively low resistivity and a large mean free path. The sensors experience greater chemical and thermal stability, are corrosion resistant, and realize an increased signal output.