23419 results about "Thermal stability" patented technology

Novel oligomers, and synthesis thereof, comprising one or more bi-, tri, or polycyclic nucleoside analogues are disclosed herein. The nucleoside analogues have a “locked” structure, termed Locked Nucleoside Analogues (LNA). LNA's exhibit highly desirable and useful properties. LNA's are capable of forming nucleobase specific duplexes and triplexes with single and double stranded nucleic acids. These complexes exhibit higher thermostability than the corresponding complexes formed with normal nucleic acids. The properties of LNA's allow for a wide range of uses such as diagnostic agents and therapeutic agents in a mammal suffering from or susceptible to, various diseases.

Based on the above and on the remarkable properties of the 2′-O,4′-C-methylene bridged LNA monomers it was decided to synthesise oligonucleotides comprising one or more 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer(s) as the first stereoisomer of LNA modified oligonucleotides. Modelling clearly indicated the xylo-LNA monomers to be locked in an N-type furanose conformation. Whereas the parent 2′-deoxy-β-D-xylofuranosyl nucleosides were shown to adopt mainly an N-type furanose conformation, the furanose ring of the 2′-deoxy-β-D-xylofuranosyl monomers present in xylo-DNA were shown by conformational analysis and computer modelling to prefer an S-type conformation thereby minimising steric repulsion between the nucleobase and the 3′-O-phopshate group (Seela, F.; Wömer, Rosemeyer, H. Helv. Chem. Acta 1994, 77, 883). As no report on the hybridisation properties and binding mode of xylo-configurated oligonucleotides in an RNA context was believed to exist, it was the aim to synthesise 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer and to study the thermal stability of oligonucleotides comprising this monomer. The results showed that fully modified or almost fully modified Xylo-LNA is useful for high-affinity targeting of complementary nucleic acids. When taking into consideration the inverted stereochemistry at C-3′ this is a surprising fact. It is likely that Xylo-LNA monomers, in a sequence context of Xylo-DNA monomers, should have an affinity-increasing effect.

A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula SialphaObetaCxHy (alpha, beta, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.

A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads. The method obviates issues such as processability and thermal stability associated with low dielectric constant materials by avoiding their use. Since air, which has the lowest dielectric constant, is used as the intralevel dielectric the structure created by this method would possess a very low capacitance and hence fast propagation speeds. Such structure is ideally suitable for high density interconnects required in high performance microelectronic device chips.

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M_p(NR⁴R⁵)_q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R¹ and R³ each represents C_1-6 alkyl, etc.; R² represents C_1-6 alkyl, etc.; R⁴ and R⁵ each represents C_1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)

A semiconductor lighting device includes at least one semiconductor light emitter and at least one wavelength converting element, physically separated from the light emitter. At least one wavelength converting element has a reflective member underneath it, so that both primary light and converted light from the wavelength converting layer become a forward transferred light preventing from backscattering loss into the light emitter. The reflective member may be a thermal conductive element to effectively remove the heat from the wavelength converting element. Accordingly, the remote wavelength conversion on a reflective surface improves the thermal stability of the wavelength conversion material and prevents backscattering loss to produce a higher radiance result from the device.

An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.

A series of noble metal organometallic complexes of the general formula (I): ML_aX_b(FBC)_c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO₂, OsO₂ and RuO₂.

This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function.

In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen,

• • the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9,
  • in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X₁ is 1.1<X₁<1.8, and
  • in the second metal nitride layer 8, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X₂ is 1.8≦X₂.

Novel materials for electron injection/transportation and emitting layers can greatly improve the stability of an organic electroluminescent display. Electroluminescent displays incorporating these materials produce blue light at low voltage levels. These novel organic materials include compounds in which 1 to 2 imidazole functional groups are introduced in the 2 or 2,6-site of 9,10 substituted anthracene. An organic electroluminescent display with an organic compound layer of these materials has high efficiency, thermal stability, operationally stability and maintains driving voltage before and after operation.

A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Thermally stable diamond constructions comprise a diamond body having a plurality of bonded diamond crystals and interstitial regions disposed among the crystals. A metallic substrate is attached to the body. The body includes a first region substantially free of a catalyst material that extends a partial depth from a surface into the body, and a second region that includes the catalyst material. The body can include natural diamond grains and/or a blend of natural and synthetic diamond grains, and is treated to form the first region. Before treatment, a portion of the body to be treated is finished to an approximate final dimension so that the depth of the first region of the finished product is substantially the same as when treated. During treatment, catalyst materials as well as non-catalyst metallic materials are removed from the diamond body to provide a further enhanced degree of thermal stability.

Dendritic polymers with enhanced amplification and interior functionality are disclosed. These dendritic polymers are made by use of fast, reactive ring-opening chemistry (or other fast reactions) combined with the use of branch cell reagents in a controlled way to rapidly and precisely build dendritic structures, generation by generation, with cleaner chemistry, often single products, lower excesses of reagents, lower levels of dilution, higher capacity method, more easily scaled to commercial dimensions, new ranges of materials, and lower cost. The dendritic compositions prepared have novel internal functionality, greater stability (e.g., thermal stability and less or no reverse Michael's reaction), and reach encapsulation surface densities at lower generations. Unexpectedly, these reactions of polyfunctional branch cell reagents with polyfunctional cores do not create cross-linked materials. Such dendritic polymers are useful as demulsifiers for oil/water emulsions, wet strength agents in the manufacture of paper, proton scavengers, polymers, nanoscale monomers, calibration standards for electron microscopy, making size selective membranes, and agents for modifying viscosity in aqueous formulations such as paint. When these dendritic polymers have a carried material associated with their surface and/or interior, then these dendritic polymers have additional properties for carrying materials due to the unique characteristics of the dendritic polymer, such as for drug delivery, transfection, and diagnostics.

In embodiments of the present invention, systems for producing a biodiesel product from multiple feedstocks may include a biodiesel reactor, a decanter, a flash evaporator and a distillation column. In other embodiments of the present invention, a process for producing a biodiesel comprises distilling a biodiesel reaction product to remove tocopherols and sterol glucosides and, optionally, adding biodiesel stabilizers to the resultant biodiesel to enhance thermal stability. The components of the system are interrelated so that parameters may be regulated to allow production of a custom biodiesel product.

The present invention provides an improved top spin valve and method of fabrication. In the preferred embodiment of the top spin valve of the present invention, a seed layer is formed of non-magnetic material having the elements Ni and Cr. In the preferred embodiments, the seed layer material has an ion milling rate comparable to that of the free layer material. This allows free layer sidewalls to be formed with shorter tails, improving free layer-to-magnetic bias layer junction, thus improving free layer domain structure and track width. In one embodiment, the seed layer may have NiFeCr, with Cr from about 20% to 50%. In another embodiment, the seed layer may have NiCr, with about 40%. Some embodiments may have the seed layer formed on an optional Ta pre-seed layer. Such embodiments provide an improved fcc (111) texture particularly for NiFe and for NiFe/CoFe free layers grown on a seed layer improving spin valve performance, and especially in embodiments having very thin NiFe free layers, ultra thin NiFe free layers, and free layers without NiFe, such as a free layer of CoFe. Such a seed layer can improve AFM pinning layer texture to improve the exchange bias, thus providing better thermal stability. Such a seed layer also provides high resistivity and can improve the magnetostriction of adjacent NiFe free layer material or improve the soft properties of an adjacent CoFe free layer.

A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co₂₀Fe₆₀B₂₀. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

A method for forming a copper bump for flip chip bonding having improved oxidation resistance and thermal stability including providing a copper column having a thickness of at least about 40 microns overlying a metallurgy including an uppermost copper metal layer and a lowermost titanium layer the lowermost titanium layer in contact with an exposed copper bonding pad portion surrounded by a passivation layer; and, selectively depositing at least one protective metal layer over the copper column according to an electrolytic deposition process.

The present invention provides spin valve with a magnetic compensation field which couples to the pinned layer and counteracts sensing current induced magnetic field. The spin valve sensor of the present invention may be formed having a structure comprising: a free layer, a first spacer layer, a pinned layer, a pinning layer, a second spacer layer, and a compensation layer. The compensation layer may be formed of ferromagnetic material with its magnetization set so that the compensation field oriented in a reinforcing relationship with the magnetization of the pinned layer. Current through the compensation layer and the spacer layer may add to the compensation field. The spacer layer may be formed of a nonmagnetic material of sufficient thickness to prevent interaction between the pinning layer and the compensation layer while providing a sufficiently small distance to allow sufficient magnetic coupling to the pinned layer. The present invention may be used to improve thermal stability and reduce Barkhausen noise while not impacting output symmetry.

Thermally-stable polycrystalline diamond materials of this invention comprise a first phase including a plurality of bonded together diamond crystals, and a second phase including a reaction product formed between a binder/catalyst material and a material reactive with the binder/catalyst material. The reaction product is disposed within interstitial regions of the polycrystalline diamond material that exists between the bonded diamond crystals. The first and second phases are formed during a single high pressure/high temperature process condition. The reaction product has a coefficient of thermal expansion that is relatively closer to that of the bonded together diamond crystals than that of the binder/catalyst material, thereby providing an improved degree of thermal stability to the polycrystalline diamond material.

A method for maximizing the interfacial properties of magnetoresistive sensors, such as spin valve and GMR sensors used in storage devices, comprises selecting the materials for ferromagnetic layers and for electrically conductive spacers that are interposed between the ferromagnetic layers. The electronegativities of the selected materials are substantially matched so that an absolute value of the differences in electronegativities is minimized. The conductive spacer material provides a relatively low resistivity and a large mean free path. The sensors experience greater chemical and thermal stability, are corrosion resistant, and realize an increased signal output.

PCD materials comprise a diamond body having bonded diamond crystals and interstitial regions disposed among the crystals. The diamond body is formed from diamond grains and a catalyst material at high pressure/high temperature conditions. The diamond grains have an average particle size of about 0.03 mm or greater. At least a portion of the diamond body has a high diamond volume content of greater than about 93 percent by volume. The entire diamond body can comprise high volume content diamond or a region of the diamond body can comprise the high volume content diamond. The diamond body includes a working surface, a first region substantially free of the catalyst material, and a second region that includes the catalyst material. At least a portion of the first region extends from the working surface to depth of from about 0.01 to about 0.1 mm.