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23402 results about "Thermal stability" patented technology

Thermal stability also describes, as defined by Schmidt (1928), the stability of a water body and its resistance to mixing. This is the amount of work needed to transform the water. (e.g. a lake) to a uniform water density. The Schmidt stability 'S' is commonly measured in Joule per square meter or g*cm/cm. Compare Stratification. "thermal stability can also be defined as the no change at micro-structural level."

Xylo-LNA analogues

Based on the above and on the remarkable properties of the 2′-O,4′-C-methylene bridged LNA monomers it was decided to synthesise oligonucleotides comprising one or more 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer(s) as the first stereoisomer of LNA modified oligonucleotides. Modelling clearly indicated the xylo-LNA monomers to be locked in an N-type furanose conformation. Whereas the parent 2′-deoxy-β-D-xylofuranosyl nucleosides were shown to adopt mainly an N-type furanose conformation, the furanose ring of the 2′-deoxy-β-D-xylofuranosyl monomers present in xylo-DNA were shown by conformational analysis and computer modelling to prefer an S-type conformation thereby minimising steric repulsion between the nucleobase and the 3′-O-phopshate group (Seela, F.; Wömer, Rosemeyer, H. Helv. Chem. Acta 1994, 77, 883). As no report on the hybridisation properties and binding mode of xylo-configurated oligonucleotides in an RNA context was believed to exist, it was the aim to synthesise 2′-O,4′-C-methylene-β-D-xylofuranosyl nucleotide monomer and to study the thermal stability of oligonucleotides comprising this monomer. The results showed that fully modified or almost fully modified Xylo-LNA is useful for high-affinity targeting of complementary nucleic acids. When taking into consideration the inverted stereochemistry at C-3′ this is a surprising fact. It is likely that Xylo-LNA monomers, in a sequence context of Xylo-DNA monomers, should have an affinity-increasing effect.
Owner:QIAGEN GMBH

Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same

A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads. The method obviates issues such as processability and thermal stability associated with low dielectric constant materials by avoiding their use. Since air, which has the lowest dielectric constant, is used as the intralevel dielectric the structure created by this method would possess a very low capacitance and hence fast propagation speeds. Such structure is ideally suitable for high density interconnects required in high performance microelectronic device chips.
Owner:GLOBALFOUNDRIES INC

Dendritic Polymers With Enhanced Amplification and Interior Functionality

Dendritic polymers with enhanced amplification and interior functionality are disclosed. These dendritic polymers are made by use of fast, reactive ring-opening chemistry (or other fast reactions) combined with the use of branch cell reagents in a controlled way to rapidly and precisely build dendritic structures, generation by generation, with cleaner chemistry, often single products, lower excesses of reagents, lower levels of dilution, higher capacity method, more easily scaled to commercial dimensions, new ranges of materials, and lower cost. The dendritic compositions prepared have novel internal functionality, greater stability (e.g., thermal stability and less or no reverse Michael's reaction), and reach encapsulation surface densities at lower generations. Unexpectedly, these reactions of polyfunctional branch cell reagents with polyfunctional cores do not create cross-linked materials. Such dendritic polymers are useful as demulsifiers for oil/water emulsions, wet strength agents in the manufacture of paper, proton scavengers, polymers, nanoscale monomers, calibration standards for electron microscopy, making size selective membranes, and agents for modifying viscosity in aqueous formulations such as paint. When these dendritic polymers have a carried material associated with their surface and/or interior, then these dendritic polymers have additional properties for carrying materials due to the unique characteristics of the dendritic polymer, such as for drug delivery, transfection, and diagnostics.
Owner:DENDRITIC NANO TECH INC

Top spin valve with improved seed layer

InactiveUS6687098B1Improved exchange bias fieldNanostructure applicationNanomagnetismEngineeringHigh resistivity
The present invention provides an improved top spin valve and method of fabrication. In the preferred embodiment of the top spin valve of the present invention, a seed layer is formed of non-magnetic material having the elements Ni and Cr. In the preferred embodiments, the seed layer material has an ion milling rate comparable to that of the free layer material. This allows free layer sidewalls to be formed with shorter tails, improving free layer-to-magnetic bias layer junction, thus improving free layer domain structure and track width. In one embodiment, the seed layer may have NiFeCr, with Cr from about 20% to 50%. In another embodiment, the seed layer may have NiCr, with about 40%. Some embodiments may have the seed layer formed on an optional Ta pre-seed layer. Such embodiments provide an improved fcc (111) texture particularly for NiFe and for NiFe/CoFe free layers grown on a seed layer improving spin valve performance, and especially in embodiments having very thin NiFe free layers, ultra thin NiFe free layers, and free layers without NiFe, such as a free layer of CoFe. Such a seed layer can improve AFM pinning layer texture to improve the exchange bias, thus providing better thermal stability. Such a seed layer also provides high resistivity and can improve the magnetostriction of adjacent NiFe free layer material or improve the soft properties of an adjacent CoFe free layer.
Owner:WESTERN DIGITAL TECH INC
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