348 results about "Tunnel barrier" patented technology

A magnetoresistive random access memory (MRAM) includes a magnetic tunnel junction (MTJ) having a reference layer, a free layer and a tunnel barrier disposed between the reference layer and the free layer. A bottom electrode is centrally disposed to be located within a periphery of the MTJ. The bottom electrode has sloped sidewalls that slope inwardly to connect to the MTJ.

A magnetic memory device includes a reference magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern, a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern, a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, and a conductive layer on a side surface of the first non-magnetic pattern.

A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.

A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

A magnetic tunnel junction (MTJ) stack, a vertical side surface of the MTJ stack includes a saw tooth edge, the MTJ stack includes vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, the free layer of the MTJ stack has a tapered edge including a first width at an upper portion of the free layer and a second width at a lower portion of the free layer, the first width is greater than the second width. Forming a first bottom electrode of a first MTJ stack, a second bottom electrode of a second MTJ stack, a first inter-layer dielectric between the first and the second bottom electrode, a first reference layer of the first MTJ stack, a second reference layer of the second MTJ stack, a second inter-layer dielectric between the first reference layer and the second reference layer.

A magnetic tunnel junction device includes a pillar structure including, from bottom to top, a bottom electrode and a magnetic tunnel junction structure, a top electrode overlying the magnetic tunnel junction structure, and a dielectric metal oxide layer extending from a sidewall of the pillar structure to a sidewall of the top electrode. The magnetic tunnel junction structure contains a reference magnetization layer including a first ferromagnetic material, a tunnel barrier layer, and a free magnetization layer including a second ferromagnetic material. The top electrode includes a metallic material containing a nonmagnetic metal element. The dielectric metal oxide layer may be formed by performing an oxidation process that oxidizes a residual metal film after a focused ion beam etch process, and eliminates conductive paths from surfaces of the pillar structure.

A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.

A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

A memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer, a free layer, a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and a platinum-containing layer containing platinum and at least one element selected from iridium, hafnium or ruthenium. The platinum-containing layer contacts the free layer.

The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu / cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A / m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

The invention relates to high temperature superconducting qubits with disorder induced tunnel barriers. A superconducting qubit circuit and a method of forming a superconducting qubit are disclosed herein. A superconducting qubit circuit includes a superconducting qubit, where the superconducting qubit includes a tunnel junction in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed from a disorder-induced tunnel barrier, where the disorder results from spatial crystal defects in the superconducting material.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate, a seed layer overlying the substrate, and a nitride layer, overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a magnetic layer overlying the templating layer, a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier. The magnetic layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA).

A magnetoresistive random-access memory cell includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

The invention discloses a quantum dot-based multi-axis electric field regulation entangled light source, which adopts a p-i-n diode structure, and sequentially comprises a GaAs layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer and An Al < 0.15 > Ga < 0.85 > As layer and an Al < 0.33 > Ga < 0.67 > As layer are sequentially arranged above the n-type doped layer and jointly serve as a tunnel potential barrier to isolate the quantum dots from the n-type doped layer; the GaAs quantum dot layer is used for growing GaAs quantum dots in the Al < 0.33 > Ga < 0.67 > As layer by adopting a liquid drop etching method; an Al < 0.33 > Ga < 0.67 > As layer covers the quantum dots to serve as a blocking potential barrier, and carrier leakage is inhibited; and the top is a p-type doped layer. The wavelength-adjustable quantum dot entangled light source with high entanglement fidelity is realized, and the requirement of a quantum repeater in a quantum network can be met.

Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM) device. The MRAM device includes a reference layer; a tunnel barrier layer next to the reference layer; and a free layer next to the tunnel barrier layer, where the free layer includes a crystalline AIMnGe layer in a C38 structure formed on a magnetic seed layer, and the magnetic seed layer is a crystallized MnCo2Si layer or a crystallized MnCo2Ge layer having a cubic Heusler structure with a (001) texture. A method of forming the MRAM device is also provided.

A magnetoresistive memory cell includes a first electrode; a second electrode; and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, and a second reference layer. A first one of the first reference layer and the second reference layer comprises a positive spin polarization material. A second one of the first reference layer and the second reference layer comprises a negative spin polarization material. A magnetization direction of the second reference layer is parallel to a magnetization direction of the first reference layer.

A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:Δ⁢M=M⁢sF⁢M⁢2⁢tF⁢M⁢2-M⁢sF⁢M⁢1⁢tF⁢M⁢1M⁢sF⁢M⁢2⁢tF⁢M⁢2+M⁢sF⁢M⁢1⁢tF⁢M⁢1wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.

A method of manufacturing a magnetoresistive stack / structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate (1401), a seed layer (1403) overlying the substrate, and a nitride layer (1403A) overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer (1403B) outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a first magnetic layer (1405) overlying the templating layer, a tunnel barrier (1409) outward of the first magnetic layer; and a second magnetic layer (1411) outward of the tunnel barrier. The first magnetic layer (1405) includes a Heusler compound and exhibits perpendicular magnetic anisotropy, PMA.

A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

The invention belongs to the technical field of optoelectronic devices, and particularly relates to a double-end ultraviolet photoelectric detector based on barrier height regulation and control and a preparation method. The structure of the detector sequentially comprises a substrate, an electrode, a functional layer, a dielectric layer and a transparent electrode layer from bottom to top, based on a metal or semiconductor / insulator medium / transparent electrode structure, ultraviolet spectrum selection is realized; two layers of semiconductors or metal layer materials are separated through the insulating dielectric layer to reduce dark current of the device, and when the energy of non-equilibrium hot electrons generated by ultraviolet irradiation is higher than the barrier height, hot electron emission is generated, so that light current is formed to realize light detection. According to the invention, the spectral response of the double-end device is regulated and controlled by using the tunneling barrier height, the dependence on a wide bandgap semiconductor is avoided, and the material selection is rich; according to the two-end structure and the three-end ultraviolet photoelectric detector provided in the earlier stage and regulated by the potential barrier, the structure is simpler, and the light response speed is higher.

Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.

Embodiments of the invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes an MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, where the free layer includes a plurality of sub-free layers, the plurality of sub-free layers being a plurality of ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the plurality of ferromagnetic strips have respective first ends connected to the first electrode and respective second ends connected to the second electrode. A method of forming the MTJ structure is also provided.

The invention discloses a quantum dot device and a preparation method thereof.The quantum dot device comprises a substrate, a semiconductor layer, a barrier regulation and control part and a control electrode, the semiconductor layer is formed on one side of the substrate and comprises a source region, a drain region and a channel region located between the source region and the drain region, and the channel region comprises a channel body and a containing space; the channel body comprises at least one quantum dot region, and two sides of the quantum dot region are respectively provided with an accommodating space; the potential barrier regulation and control part is located in the accommodating space, and the potential barrier regulation and control part is used for regulating the tunneling potential barrier of the channel region; the control electrodes are located on the sides, away from the substrate, of the quantum dot areas and correspond to the quantum dot areas one to one. According to the quantum dot device provided by the invention, the potential barrier adjusting part is arranged in the semiconductor layer, so that the tunneling potential barrier in the channel region can be adjusted and controlled, the tunneling potential barrier can be increased or decreased, and the quantum dot device with ideal working current is obtained.

A semiconductor device includes a first substrate, a transistor, an interconnection structure, a first bonding pad, a magnetic tunnel junction (MTJ) structure, a conductive line and a second substrate. The transistor is formed on the first substrate. The interconnection structure is formed on the first substrate and electrically connected to the transistor. The first bonding pad is formed on and electrically connected to the interconnection structure. The MTJ structure is disposed on and electrically connected to the first bonding pad, wherein the MTJ structure comprises a free layer, a tunnel barrier layer, a synthetic antiferromagnet layer sequentially stacked up over the first bonding pad. The conductive line is disposed on the MTJ structure. The second substrate is disposed on the conductive line.

According to one aspect of the inventive concept, there is provided a MTJ device comprising a layer stack, comprising a SOT layer and a first free layer, a second free layer, a reference layer and a tunnel barrier layer arranged between the second free layer and the reference layer, and a spacer layer arranged as an interface layer between the first free layer and the second free layer, wherein the SOT layer is adapted to switch a magnetization direction of the first free layer by SOT, and wherein the first free layer is adapted to generate a magnetic stray field acting on the second free layer such that a magnetization direction of the second free layer is responsive to the magnetization direction of the first free layer.