9 results about "Spin-transfer torque" patented technology

The invention discloses a true random number generator and a chip. The true random number generator comprises a phase-locked loop module and a trigger module, wherein the phase-locked loop module comprises a spin torque nano oscillation unit. The input end of the phase-locked loop module is used for receiving a reference signal, and the output end of the phase-locked loop module is connected with the trigger module. The phase-locked loop module is used for obtaining an output signal based on the spin transfer torque effect of the spin torque nano oscillation unit according to the reference signal and a feedback signal, and the feedback signal is a signal obtained by feeding back the output signal to the input end. The trigger module is used for sampling the output signal based on the reference signal to generate a random number sequence. Therefore, the random number sequence with high randomness can be generated, the influence of sampling and external magnetic field interference on the random number sequence is eliminated, and the robustness of the true random number generator is enhanced.

The present embodiments relate to a perpendicular magnetic recording (PMR) write head with an STO element and configured to direct an electric current between elements of the write head. A first example embodiment describes a perpendicular magnetic recording (PMR) write head. The PMR write head can include a main pole comprising a tip portion disposed adjacent to an air bearing surface (ABS) and is configured to interact with a magnetic recording medium. The PMR write head can also include a spin torque oscillator (STO) element disposed adjacent to the main pole. The PMR write head can also include a side shield layer with a portion of the side shield layer disposed adjacent to the ABS. The PMR write head can also include a metallic side gap layer disposed between the main pole and the side shield layer.

A neuromorphic computing array includes horizontal lines and vertical lines, with the vertical lines intersecting the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding horizontal line and a corresponding vertical line. Each cell includes a substrate (1401), a seed layer (1403) covering the substrate, and a nitride layer (1403A) covering the seed layer (optionally, the nitride layer has a thickness greater than 5 angstroms). Each cell also includes a template layer (1403B) located outside the nitride layer, the template layer comprising a binary alloy having an alternating layered lattice structure and having a thickness greater than 50 angstroms. Each cell also includes a first magnetic layer (1405) covering the template layer, a tunnel barrier (1409) located outside the first magnetic layer, and a second magnetic layer (1411) located outside the tunnel barrier. The first magnetic layer (1405) comprises a Hessler alloy and exhibits perpendicular magnetic anisotropy (PMA).

A method for forming structures with desired crystallinity used in MRAM applications is disclosed. Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures used in spin transfer torque magnetoresistive random access memory (STT-MRAM) applications on a substrate. In one embodiment, the method includes patterning a film stack disposed on a substrate having a tunneling barrier disposed between a magnetic reference layer and a magnetic storage layer to remove a portion of the film stack from the substrate until an upper surface of the substrate is exposed; forming a sidewall passivation layer on sidewalls of the patterned film stack; and subsequently performing a thermal anneal process on the film stack.

The invention discloses a magnetic storage array and a read-write method, in the magnetic storage array, a plurality of magnetic storage devices are arranged along an X-Y plane, and each word line simultaneously wraps the outer sides of a plurality of gates; each bit line is connected with the tops of the plurality of column electrodes; drain electrodes of the plurality of CMOS transistors are connected with the bottom of the column electrode; the grid line is connected with grid electrodes of the plurality of CMOS transistors; the source line is connected with the source electrodes of the plurality of CMOS transistors; magnetization overturning of a magnetic free layer of the magnetic tunnel junction is completed through the combined action of a spin-orbit moment and a spin-transfer moment, the spin-orbit moment is provided by spin-polarized electrons, the polarization direction of the spin-polarized electrons is the circumferential direction, generated by current passing through a column electrode, and the spin-transfer moment is provided by injecting write current in the radial direction of the magnetic tunnel junction. The judgment of the resistance state of the magnetic tunnel junction in the magnetic storage array is completed by injecting read current along the radial direction of the magnetic tunnel junction.

The application relates to a multistate magnetic memory based on a double-layer magnetic tunnel junction, which comprises a top electrode (10), a first magnetic tunnel junction, a metal interlayer (50), a second magnetic tunnel junction, and a bottom electrode (90); wherein the first magnetic tunnel junction comprises, from top to bottom, a free layer FL1 (20), a tunneling layer (30), and a reference layer RL1 (40), the second magnetic tunnel junction comprises, from top to bottom, a free layer FL2 (60), a tunneling layer (70), and a reference layer RL2 (80); the memory is further provided with at least three ports, a port one (1) is connected with the top electrode (10), a port two (2) and a port three (3) are respectively arranged at the left and right ends of the bottom electrode (90), and the current direction of the port two is opposite to the current direction of the port three. The application simultaneously utilizes spin transfer torque (STT) and spin orbit torque (SOT) flip mechanisms, corresponding input current channels are independent, and write or read signals are inputted without affecting each other. The application introduces the magnetization flip of the reference layer, increases data writing space, and provides logical judgment for reading data bits.

The invention discloses a spin valve device based on ferroelectric metal. The spin valve device comprises a top electrode, a first ferromagnetic layer, a ferroelectric metal layer, a second ferromagnetic layer and a bottom electrode which are sequentially stacked from top to bottom. Wherein the ferroelectric metal layer has ferroelectricity and metal conductivity at the same time, and is in direct contact with the upper ferromagnetic layer and the lower ferromagnetic layer to form an interface magnetoelectric coupling effect. Based on the core structure, the invention provides two nonvolatile memories, namely an STT type memory and an SOT type memory, the STT type memory performs writing by utilizing a spin-transfer torque effect, and the SOT type memory performs writing on a bottom heavy metal layer by utilizing a spin-orbit torque effect. Voltage pulses are applied to the ferroelectric metal layer to regulate and control the polarization state of the ferroelectric metal layer, so that magnetization overturning of the second ferromagnetic layer can be effectively assisted to reduce write-in power consumption; different polarization states of the ferroelectric metal layer are combined with different magnetization states of the ferromagnetic layer, so that a plurality of distinguishable resistance states can be formed, and multi-state information storage is realized.

The present embodiments relate to a perpendicular magnetic recording (PMR) write head with an STO element and configured to direct an electric current between elements of the write head. A first example embodiment describes a perpendicular magnetic recording (PMR) write head. The PMR write head can include a main pole comprising a tip portion disposed adjacent to an air bearing surface (ABS) and is configured to interact with a magnetic recording medium. The PMR write head can also include a spin torque oscillator (STO) element disposed adjacent to the main pole. The PMR write head can also include a side shield layer with a portion of the side shield layer disposed adjacent to the ABS. The PMR write head can also include a metallic side gap layer disposed between the main pole and the side shield layer.

The present embodiments relate to write heads implementing microwave-assisted magnetic recording utilizing multiple spin torque oscillators (STOs). Each STO can include a field-generation layer (FGL) that can oscillate in a same frequency and out of phase with one another. The layers in each STO can enable mutual spin transfer torques between adjacent layers, which can drive the FGLs into a large angle oscillation. The oscillation between the FGLs can cause a magnetic field to be generated that can assist in writing to a magnetic recording medium.