105 results about "Magnetic anisotropy" patented technology

The invention relates to a sunken porous magnetic alloy ball wave-absorbing material and a preparation method and application thereof.The wave-absorbing material is prepared through the following steps that S1, citric acid, soluble ferric salt, soluble cobalt salt and soluble nickel salt are dissolved in a mixed solvent of ethylene glycol and water, and the mixture is fully stirred to form a uniform mixed solution; and S2, the mixed solution obtained in the step S1 is subjected to spray drying, obtained precursor powder is placed in the air atmosphere to be calcined to remove the carbon source, then the precursor powder is placed in the H2 / Ar atmosphere to be subjected to heating reduction, and the porous FeCoNi alloy balls with the surface pits are obtained and are the target product. The surface of the prepared alloy microsphere has an obvious concave structure, magnetic anisotropy and magnetic performance are enhanced, a small number of pores are generated in the reduction process, impedance matching of the material is optimized, and effective high-frequency electromagnetic absorption is achieved; and due to the synergistic effect of the recesses and the pores, the obtained alloy microspheres have obvious lightweight characteristic, and have good application prospects in the field of electromagnetic absorption.

A memory cell capable of reversing magnetization on the basis of voltage drive is achieved without providing a selector element in the memory cell. A storage device includes: a memory cell provided with a magnetoresistive effect element; a word line connected to one end of the magnetoresistive effect element; and a bit line connected to another end of the magnetoresistive effect element. The magnetoresistive effect element may have a voltage controlled magnetic anisotropy (VCMA) effect. A driver configured to apply a reversing voltage for reversing a magnetization direction of the magnetoresistive effect element on the basis of the VCMA effect may be included. The driver may switch a voltage applied to the memory cell such that a reversing voltage is applied to a selected cell while a non-reversing voltage is applied to a non-selected cell, in which the non-reversing voltage does not reverse a magnetization direction of the magnetoresistive effect element.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

Provided is a non-oriented electrical steel sheet that is excellent in iron loss and magnetic anisotropy under high magnetic flux and high frequency conditions, and a method for manufacturing the same. [Solution] A method for producing a grain-oriented electrical steel sheet includes the steps of heating a slab containing, by weight, 1.5 to 6.5% Si, 0.0005 to 3.5% Al, 0.01 to 3.0% Mn, 0.005 to 5.0% Cr, 0.0005 to 0.03% S, the balance being Fe and other unavoidable impurities, at 1050 to 1220°C, finish hot rolling the slab to obtain a hot-rolled sheet, hot-rolling the hot-rolled sheet at 850 to 1150°C for 30 to 300 seconds, cold-rolling the hot-rolled sheet that has been annealed to obtain a cold-rolled sheet, heating the cold-rolled sheet, and rolling the heated cold-rolled sheet. and final annealing at 600 to 1150°C for 10 to 300 seconds, wherein the cold rolling satisfies the following [Relationship 2], wherein the heating rate in the temperature range of 300 to 500°C during heating is 5 to 150°C / s, and the gas atmosphere in the temperature range of 500 to 750°C during the final annealing is composed of, by volume, 15 to 99.99% hydrogen, 0.0001 to 0.0030% oxygen, and the balance being an inert gas, and the oxygen content in the gas atmosphere in the temperature range of 800 to 1100°C during the final annealing is 1 to 1.5 times that in the temperature range of 500 to 750°C. [Relationship 2] Maximum temperature of cold-rolled sheet surface during cold rolling < 200 × cold rolling reduction / 100 + 40

A method for preparing ultrathin non-oriented silicon steel with low magnetic anisotropy, belonging to the field of non-oriented silicon steel production technology, includes the following steps: smelting molten steel according to a set chemical composition; continuous casting, hot rolling, pickling, first-stage cold rolling, intermediate annealing, second-stage cold rolling, finished product annealing, and coating to obtain non-oriented silicon steel with a thickness of 0.10mm~0.15mm. This invention, through the synergistic control of a two-stage high-reduction-rate cold rolling process and an intermediate low-temperature annealing process, forms a relatively uniform, continuous, medium-strength γ-fiber recrystallization texture and a relatively weak recrystallization texture on the finished annealed plate. This achieves the purpose of reducing magnetic anisotropy and increasing the magnetic flux density B. 50 Anisotropy ≤ 0.5%, iron loss P 10 / 400 Anisotropy ≤ 4%, iron loss P 10 / 1000 Anisotropy ≤ 4%.

The invention relates to the technical field of heat-insulating and demagnetizing refrigeration, and discloses a heat-insulating and demagnetizing refrigeration material based on a Trellis crystal lattice and a preparation method and application of the heat-insulating and demagnetizing refrigeration material. The chemical formula of the heat insulation and demagnetization refrigeration material based on the Trellis crystal lattice is Gd2GeB2O8. A magnetic test result of the Gd2GeB2O8 crystal shows that the magnetic anisotropy of the crystal material is relatively weak and tends to magnetic isotropy, and a long-range magnetic orderliness phenomenon is not observed above 1.8 K. And when adiabatic demagnetization is carried out under initial conditions that T is equal to 3K and B is equal to 7T, the material can reach the maximum negative magnetic entropy difference of 51.68 J * kg <-1 > * K <-1 >, which shows that the Gd2GeB2O8 has a better application prospect in a 3-17K temperature zone and a sub-Kelvin temperature zone.

The invention relates to the field of optical fibers, in particular to a D-type optical fiber based on Fe3GaTe2 nanosheets and a preparation method and application of the D-type optical fiber. The invention discloses a D-type optical fiber based on a Fe3GaTe2 nanosheet. The D-type optical fiber comprises a D-type optical fiber and a Fe3GaTe2 layer deposited on a D-type plane of the D-type optical fiber. By utilizing the evanescent field characteristic of the D-type optical fiber, the Fe3GaTe2 nanosheet is deposited on the D-type plane of the D-type optical fiber, and magnetic anisotropy change (such as magnetization direction switching) is generated under the action of an external magnetic field, so that the effective refractive index of the optical fiber is changed; the change is converted into an optical path difference in the Michelson interferometer. Finally, the magnetic field intensity can be inverted by measuring the FSR change of the interference spectrum. The room-temperature MA adjustability of the Fe3GaTe2 nanosheets provides a larger refractive index change range (superior to that of magnetic fluid), and the nanosheets are not easy to degrade, so that the D-type optical fiber has higher sensitivity and temperature performance.

An object of the present invention is to provide a non-oriented electrical steel sheet in which a specific texture is developed and magnetic anisotropy is maximized through heating, first soaking, second soaking, and cooling steps in an annealing step after preliminary cold rolling, and a manufacturing method thereof. The non-oriented electrical steel sheet of the present invention is characterized in that it contains, by weight %, 1.5 to 5.0% Si, 0.1 to 2.0% Al, 0.1 to 2.0% Mn, residual Fe, and unavoidable impurities, and satisfies the following formula 1: [Formula 1] V{001} <001> / V{011} <001> ≦0.65 (In Equation 1, V{001} <001> is {001} <001> The percentage of grains with an orientation within 15° of V{011} <001> is {011} <001> This indicates the percentage of grains with orientations within 15° of the

The application relates to a three-dimensional magnetotelluric anisotropy parallel finite element forward method coupled with PML. The method comprises the following steps: determining a non-reflection condition required by PML according to the continuity condition of an electromagnetic field and the dispersion relation of a plane wave in TE and TM modes; determining the parameter form of the stable absorption performance of PML by using the relationship between the incident field and the transmission field in a lossy medium; constructing an improved wide-band PML parameter tensor according to the non-reflection condition, the parameter form of the stable absorption performance and preset characteristic parameters; and realizing finite element forward by using the improved wide-band PML parameter tensor under a preset multi-level parallel architecture to obtain a finite element forward result. The method can be accurate, efficient and widely applicable.

The invention relates to an amorphous alloy wire continuous annealing device and method based on an alternating load auxiliary magnetic field. In magnetic field equipment of the device, a transverse Helmholtz coil transversely surrounds the periphery of a heat treatment furnace, the axial direction of the transverse Helmholtz coil is perpendicular to the wire penetrating direction, and a longitudinal Helmholtz coil longitudinally surrounds the periphery of the heat treatment furnace, and the axial direction of the longitudinal Helmholtz coil is parallel to the wire penetrating direction; in the heat treatment furnace, a hearth is arranged in a furnace box, and heating equipment is arranged on the hearth; in the alternating load equipment, a clamp is arranged on a three-dimensional combined table to clamp the amorphous alloy wire, and the tensile load is detected; in the winding device, a wire feeding roller winds the amorphous alloy wire and feeds the wire to the heat treatment furnace before annealing is started, after the amorphous alloy wire is clamped by the alternating load devices on the two sides, annealing is conducted under the conditions of a dynamic magnetic field and alternating loads, and a wire winding motor drives a wire winding roller to complete wire winding. Compared with the prior art, isotropic release of an internal stress field of the amorphous alloy wire is effectively promoted, and the amorphous alloy wire is better designed for materials with specific magnetic anisotropy requirements.

According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is that a magnetic sensor (1) is provided with a non-magnetic substrate (10), and a sensing element (30) provided on the substrate (10), the sensing element (30) comprising a soft magnetic layer (101) of an amorphous alloy with Co as the main component, having a saturation magnetization of 300 emu / cc or more and 650 emu / cc or less, and the sensing element (30) having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction intersecting the long side direction, and sensing a magnetic field by the magnetoimpedance effect.

The invention relates to the technical field of magnetic core preparation, and provides a magnetic core, electrical equipment and a preparation method of the magnetic core, and the magnetic core comprises at least two layers of magnetic sheets and a bonding layer. And the at least two layers of magnetic sheets are laminated. A bonding layer is arranged between any two adjacent magnetic sheets; the magnetic core has a cut surface, the flatness Fl of the cut surface is less than or equal to 2 [mu] m, and the roughness Rz of the cut surface is less than or equal to 1 [mu] m; all the magnetic sheets and all the adhesive layers intersect with the cut surface. Therefore, the magnetic core shows the characteristic of magnetic anisotropy, and then the magnetic conductivity has different values in different directions. And the magnetic conductivity is higher in the easy magnetization direction, so that the magnetic conductivity of the magnetic core can be improved by utilizing the easy magnetization direction of the magnetic core. In addition, hysteresis loss and eddy-current loss of the magnetic core can be reduced. After the cut-off surfaces of the two magnetic cores abut against each other, the width of the gap between the two cut-off surfaces can meet the installation requirement of the magnetic cores, and therefore the standard of the appearance of the cut-off surfaces of the magnetic cores can be met.

The application discloses a low magnetic permeability amorphous alloy, characterized in that the low magnetic permeability amorphous alloy is formed by segmental magnetic field heat treatment of an iron-based alloy disordered structure strip, and the alloy composition of the iron-based alloy disordered structure strip is Fe-Si-B-M, wherein M is one or more of C, Co, Nb, Mn, Cu and Ni. The application reduces the dislocation dipole density of the alloy, improves the structural disorder, effectively releases the internal stress, and combines the uniform magnetic anisotropy induced by the segmental magnetic field, so as to realize the low magnetic permeability and low loss of the amorphous alloy. The application further discloses a preparation method of the low magnetic permeability amorphous alloy and application of the low magnetic permeability amorphous alloy to a hybrid magnetic circuit distribution transformer.

A magnetic field-assisted additive manufacturing (MFAAM) system and method for fabricating anisotropic bonded magnets. The system includes a magnetic field source assembly including a modular Halbach holder, an inner Halbach holder, and a Halbach cylinder configured to provide a magnetic field for aligning magnetic fillers within a polymer matrix during extrusion. The field gradient of the Halbach cylinder is less than 0.0005 T / mm allowing to obtain high print quality in a large magnetic field. To enable high-temperature processing, the assembly incorporates a cooling casing fluidly coupled to a cooling medium. This active thermal management maintains the Halbach cylinder below a threshold temperature while a heated nozzle extrudes the composite material at temperatures sufficient to melt high-performance polymers. The integration of the magnetic source and cooling jacket allows for the precise alignment of magnetic domains in high-viscosity matrices, resulting in 3D-printed bonded magnets with consistent magnetic anisotropy and improved structural properties.

The present disclosure provides a non-oriented electrical steel with excellent overall performance, which contains, in addition to Fe and inevitable impurities, the following chemical elements by mass percentage: C≦0.0050%, Si: 3.10-4.50%, Al: 0.10%-2.00%, Mn: 0.10%-2.50%, and 3.75%≦Si+Al≦5.22%. Correspondingly, the present disclosure also discloses a method for producing the non-oriented electrical steel. The non-oriented electrical steel has small magnetic anisotropy, high magnetic induction strength, small iron loss at medium and high frequencies, and high yield strength, making it suitable for use as an iron core material in electric vehicle drive motors, high-speed motors, unmanned aerial vehicles, and the like.

The present disclosure provides an epitaxial structure, a preparation system thereof and a semiconductor device. The preparation system of the epitaxial structure comprises: a reaction chamber for epitaxially growing a magnetic layer of a gyromagnetic ferrite on a semiconductor substrate; and a first magnetic field generating device for generating a magnetic field in the reaction chamber, wherein the magnetic field has a magnetic field component parallel to the surface of the semiconductor substrate. The preparation system provided by the present disclosure is integrated with the first magnetic field generating device, and by applying a magnetic field with a magnetic field component parallel to the surface of the semiconductor substrate in the reaction chamber, the reaction and crystallization process of reaction gas atoms in the reaction chamber can be affected, so as to change the crystallization orientation, and the in-plane uniaxial magnetic anisotropy can be induced even on a non-textured semiconductor substrate, so as to grow the magnetic layer of the gyromagnetic ferrite with strong crystallographic texture, and further to realize mass production of the magnetic layer of the gyromagnetic ferrite on the non-textured semiconductor substrate.

This application discloses a method, apparatus, device, medium, and program product for measuring the effective field of spin orbital moments, relating to the field of spintronics technology. The method includes: acquiring a target sample of an in-plane magnetically anisotropic thin film; applying a current to the target sample along a first direction parallel to the target sample; and applying a scanning magnetic field to the target sample in a second direction perpendicular to the first direction, wherein the first direction is the current direction and the second direction is a direction perpendicular to the current direction within the plane; during the application of the scanning magnetic field, detecting the voltage of the target sample under the scanning magnetic field, and obtaining a second-order magnetoresistance curve of the resistance to the magnetic field corresponding to the voltage; and determining the effective field of the spin orbital moments of the target sample based on the offset of the magnetic field values ​​corresponding to characteristic points on the second-order magnetoresistance curve under different current conditions. This application achieves high-precision and high-reliability measurement of the effective field of the spin orbital moments of an in-plane magnetically anisotropic thin film without relying on the first-order curve morphology and avoiding temperature drift interference.

The utility model relates to the technical field of neodymium-iron-boron production devices, in particular to a surface cleaning device for neodymium-iron-boron production, which comprises a cleaning containing mechanism arranged in an inner cavity of a cleaning cabinet shell, and the cleaning containing mechanism comprises a lifting plate which is vertically and slidably connected to the inner cavity of the cleaning cabinet shell and used for bearing neodymium-iron-boron. A fence is fixedly mounted on the lifting plate, and a fixed convex magnetic column group opposite to neodymium iron boron in magnetism is fixedly mounted on the lifting plate and located in an inner cavity of the fence; a neodymium iron boron separation assembly is arranged on the lifting plate and located in an inner cavity of the fence. According to the neodymium-iron-boron cleaning device, the sliding plates can be adjusted according to the width specification of neodymium-iron-boron to be cleaned, the neodymium-iron-boron to be cleaned is arranged on the fixed convex magnetic column set according to the magnetic anisotropy after adjustment and located between the fixed plate and the sliding plates, and through the arrangement of the fixed plate and the sliding plates, single neodymium-iron-boron can be conveniently separated and sorted; and through the cooperative arrangement of the fixed convex magnetic column group, the placement stability of neodymium iron boron is further ensured.

The invention provides an anisotropic conductive film and a conductive connector which can realize low resistance, improvement of high-frequency characteristics, high resolution, improvement of contact stability caused by reduction of contact pressure, high current and improvement of durability compared with the prior art. The anisotropic conductive film (110) is provided with: an insulating film (112) comprising an elastic polymer material; and particles (200) which are dispersed in the insulating film (112) and which have magnetic anisotropy such that the easy magnetization direction becomes the thickness direction thereof, and which comprise a substance having topological antiferromagnetic properties. The particles (200) form a plurality of conductive parts (114) which are arranged at intervals in the in-plane direction of the insulating film (100) and are capable of conducting in the thickness direction thereof, and each of the conductive parts (114) is formed of a single particle (or a plurality of particles arranged in the thickness direction). Each of the particles (200) has a south pole region (604) and a north pole region (602) formed at both end portions in a direction along the easy magnetization direction, respectively, and the magnetic flux of the virtual magnetic field is concentrated in the south pole region (604) and the north pole region (602).

The invention discloses a knittable magnetic fiber material with an angle sensitive characteristic as well as a preparation method and application of the knittable magnetic fiber material. Cobalt acetate and nickel acetate are used as raw materials, under the alkaline condition, the magnetic fiber material of a CoNi single face-centered cubic crystal structure is prepared through solvothermal reaction under directional induction of a magnetic field, and the magnetic fiber material is in a long fiber shape with the smooth surface and has high orientation, angle sensitivity and weaving performance. According to the invention, the height orientation and the high length-diameter ratio of the magnetic fiber are realized through the oriented induction growth of the magnetic field, the magnetic anisotropy is obviously improved, and the material is endowed with angle-sensitive electromagnetic response. The shape of the magnetic fiber material is suitable for a weaving process, a fabric with functionality and certain flexibility can be prepared by combining conductive warp and weft materials, a woven body formed by weaving shows angle-dependent electromagnetic shielding and microwave thermal response performance, and the magnetic fiber material is suitable for the field of controllable electromagnetic protection and intelligent thermal management. And a new technical approach is provided for the development of flexible magnetic functional materials.

A magnetic field detection sensor with: a magnetic impedance element designed to exploit a magnetic impedance effect; a bias coil designed to apply a bias field to the magnetic impedance element; an oscillator circuit designed to apply an alternating current to the magnetic impedance element; a differentiating circuit designed to differentiate an output signal of the magnetic impedance element; a flip-flop circuit configured to output a high-level signal and a low-level signal based on a trigger signal output by the differentiating circuit; and a computing unit configured to detect an external magnetic field based on a time course with high and low of the high-level signal and low-level signal output by the flip-flop circuit, wherein the magnetic field detection sensor is configured to detect the external magnetic field based on an output signal obtained by applying the alternating current to the magnetic impedance element, the magnetic impedance element comprises a non-magnetic substrate and a magnetic layer provided on a surface of the non-magnetic substrate, wherein a magnetic field detection direction coincides with a longitudinal direction of the magnetic impedance element and the magnetic layer is configured to have magnetic anisotropy such that a direction of an axis of its easy magnetizability coincides with the magnetic field detection direction, and The computing unit is configured to send a reset signal to the flip-flop circuit at the time of a drop in an AC bias frequency, and to detect the external magnetic field based on the duration of an initial high-level signal following the reset signal.

The invention provides a magnetic material surface temperature gradient generation method based on laser regulation and control, and relates to the field of data processing. According to the method, optical absorption, electron energy relaxation, phonon thermal conductivity and magnetic anisotropy parameters of a magnetic material are obtained, modeling is carried out in a three-dimensional space according to a silicon-based substrate, a cobalt layer and a platinum layer, and a cross-scale photo-thermal-magnetic full-coupling model is constructed. The method comprises the following steps: generating a laser coding tensor through light intensity, wavelength and phase parameters of a laser space modulation array, driving a model to solve in a simulation environment, generating temperature gradient evolution data and an implicit field quantity, and constructing a temperature gradient control database. After target temperature gradient distribution is set, a depth prediction model is used for outputting a temperature gradient evolution sequence, sensitivity distribution is calculated through the model, the optimal laser coding tensor is determined, finally verification and application to a laser array are carried out, and temperature distribution consistent with the target temperature gradient is achieved. By implementing the technical scheme, the temperature gradient on the surface of the magnetic material is convenient to generate.

To prevent a decrease in magnetic anisotropy modulation efficiency while improving crystallinity of a magnetic layer in a magnetic memory element. A magnetic memory element includes a storage layer having a variable magnetization direction and a voltage-controlled magnetic anisotropy effect, a reference layer having an invariable magnetization direction, a tunnel barrier layer disposed between the storage layer and the reference layer, and an underlayer disposed below the storage layer. The storage layer included in the magnetic memory element is configured to have a B content of 10at% or less. The underlayer included in the magnetic memory element is configured to have an orientation different from that of the tunnel barrier layer or to be in an amorphous state.

The invention discloses a method and a device for measuring a voltage-controlled magnetic anisotropy coefficient. The measurement method comprises the following steps: applying a microwave radio frequency signal and a bias voltage signal to the detection part within a preset time period; the preset time period comprises a plurality of time points, and the bias signals are different at different time points; wherein the first contact pad is used for receiving the bias voltage signal; the second contact pad is grounded; obtaining an effective anisotropic field of the to-be-detected magnetic film sample corresponding to each bias signal; and determining the voltage control magnetic anisotropy coefficient according to the plurality of bias voltage signals and the effective anisotropy fields corresponding to the bias voltage signals.

Provided is a magnetoresistive effect memory that includes a magnetoresistive effect element. The magnetoresistive effect element provided in the magnetoresistive effect memory includes a voltage-controlled magnetic anisotropy effect layer (first magnetization free layer that is a magnetization free layer having a variable magnetization direction and has a voltage-controlled magnetic anisotropy effect, a non-voltage-controlled magnetic anisotropy effect layer (second magnetization free layer that is a magnetization free layer having a variable magnetization direction and has no voltage-controlled magnetic anisotropy effect, and a magnetization fixed layer that has a magnetic anisotropy and has an invariable magnetization direction.

The present invention reduces power consumption in an arithmetic circuit that uses a magnetoresistance effect element.　This arithmetic circuit comprises an arithmetic element and a control circuit. The arithmetic element includes a magnetoresistance effect element the magnetization direction of which is reversed by a voltage controlled magnetic anisotropy (VCMA) effect. The control circuit performs input processing for sequentially inputting, to the arithmetic element, a plurality of bits to be computed in a predetermined logical operation, and after the input processing, output processing for causing the arithmetic element to output one-bit output data indicating the result of the logical operation.

The invention discloses a method for preparing a one-dimensional nano-structure magnetic material through magnetic nano-particle self-assembly, and belongs to the technical field of nano-material preparation. The method for preparing the one-dimensional nano-structure magnetic material through magnetic nano-particle self-assembly comprises the following steps: mixing a magnetic nano-particle precursor, a surfactant and a solvent to obtain a mixed solution, and inducing the magnetic nano-particle precursor to realize self-assembly through a heating reaction to obtain the one-dimensional nano-structure magnetic material. According to the method for forming the one-dimensional nano-structure magnetic material by driving self-assembly based on the spontaneous magnetic dipole interaction of the magnetic nanoparticles without an external magnetic field provided by the invention, the magnetic anisotropy and the magnetic dipole interaction are enhanced by regulating and controlling the particle spacing through parameters, and the magnetic nanoparticles are induced to be connected end to end, so that the one-dimensional nano-structure magnetic material is formed. And self-assembling to form a nanometer chain structure with a controllable length. The method is simple in structure and has good expandability and universality.

The invention relates to the technical field of metal complexes, and provides a free radical binuclear rare earth monomolecular magnet complex as well as a preparation method and application thereof in order to solve the problem that a conventional self-assembly strategy cannot meet the development requirement of a high-performance multi-core rare earth monomolecular magnet. The hydroquinone bridged free radical rare earth monomolecular magnet complex Ln2 (L1) 2 (L2) (OTF) 2 (Py) 2 is obtained through design and synthesis, L1 and L2 are organic ligands, and Ln is any one of rare earth metal Dy, Gd or Y. The single-molecular magnet property of the prepared series of free radical binuclear rare earth complexes is mainly regulated and controlled by rare earth metal ions and bridging free radical ligands, the rare earth metal Dy ions have remarkable magnetic anisotropy and high magnetization intensity, and the magnetic interaction among the rare earth ions can be effectively enhanced through introduction of the bridging free radical ligands; and thus, effective regulation and control on the magnetization quantum tunneling and magnetic relaxation process of the single-molecule magnet are realized.