17 results about "Magnetic anisotropy" patented technology

According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.

The application discloses a low magnetic permeability amorphous alloy, characterized in that the low magnetic permeability amorphous alloy is formed by segmental magnetic field heat treatment of an iron-based alloy disordered structure strip, and the alloy composition of the iron-based alloy disordered structure strip is Fe-Si-B-M, wherein M is one or more of C, Co, Nb, Mn, Cu and Ni. The application reduces the dislocation dipole density of the alloy, improves the structural disorder, effectively releases the internal stress, and combines the uniform magnetic anisotropy induced by the segmental magnetic field, so as to realize the low magnetic permeability and low loss of the amorphous alloy. The application further discloses a preparation method of the low magnetic permeability amorphous alloy and application of the low magnetic permeability amorphous alloy to a hybrid magnetic circuit distribution transformer.

A magnetic field-assisted additive manufacturing (MFAAM) system and method for fabricating anisotropic bonded magnets. The system includes a magnetic field source assembly including a modular Halbach holder, an inner Halbach holder, and a Halbach cylinder configured to provide a magnetic field for aligning magnetic fillers within a polymer matrix during extrusion. The field gradient of the Halbach cylinder is less than 0.0005 T / mm allowing to obtain high print quality in a large magnetic field. To enable high-temperature processing, the assembly incorporates a cooling casing fluidly coupled to a cooling medium. This active thermal management maintains the Halbach cylinder below a threshold temperature while a heated nozzle extrudes the composite material at temperatures sufficient to melt high-performance polymers. The integration of the magnetic source and cooling jacket allows for the precise alignment of magnetic domains in high-viscosity matrices, resulting in 3D-printed bonded magnets with consistent magnetic anisotropy and improved structural properties.

The present disclosure provides an epitaxial structure, a preparation system thereof and a semiconductor device. The preparation system of the epitaxial structure comprises: a reaction chamber for epitaxially growing a magnetic layer of a gyromagnetic ferrite on a semiconductor substrate; and a first magnetic field generating device for generating a magnetic field in the reaction chamber, wherein the magnetic field has a magnetic field component parallel to the surface of the semiconductor substrate. The preparation system provided by the present disclosure is integrated with the first magnetic field generating device, and by applying a magnetic field with a magnetic field component parallel to the surface of the semiconductor substrate in the reaction chamber, the reaction and crystallization process of reaction gas atoms in the reaction chamber can be affected, so as to change the crystallization orientation, and the in-plane uniaxial magnetic anisotropy can be induced even on a non-textured semiconductor substrate, so as to grow the magnetic layer of the gyromagnetic ferrite with strong crystallographic texture, and further to realize mass production of the magnetic layer of the gyromagnetic ferrite on the non-textured semiconductor substrate.

A self-referencing PUF device, a read-write circuit, and a read-write circuit array. The PUF device comprises: an intermediate magnetic tunnel junction (MTJ) (10), and a first MTJ (20) and a second MTJ (30) respectively located on two sides of the intermediate MTJ (10). There are gaps between the first MTJ (20) and the intermediate MTJ (10) and between the second MTJ (30) and the intermediate MTJ (10), respectively. The first MTJ (20), the intermediate MTJ (10), and the second MTJ (30) use the same free layer. The width of the free layer gradually decreases from the part located on the intermediate MTJ (10) to the part located on the first MTJ (20) and to the part located on the second MTJ (30), respectively, so as to form magnetic anisotropy gradients. A voltage control layer (40) is disposed on the free layer and in an area located on the intermediate MTJ (10). In the present application, the MTJs at two ends can serve as read-write devices, and in an initial state, a magnetic domain wall is fixed in an area of the intermediate MTJ (10), so that by driving the magnetic domain wall to randomly relax toward two sides on the basis of anisotropy, a low-resistance state is formed when the magnetic domain wall is stabilized on the MTJ at one side, while the MTJ at the other side is in a high-resistance state, so as to form a self-referencing structure of the device, thereby increasing the read margin of the device.

The present disclosure provides a spin-orbit torque superlattice material, comprising a plurality of superlattice units sequentially stacked to form a multi-period superlattice structure, each of the superlattice units comprising: a spin Hall layer having a spin Hall effect for converting an electric charge flow into a high-density spin flow; a magnetic layer located above the spin Hall layer and flipping a magnetization direction under the action of the spin flow; and a symmetry-breaking layer located above the magnetic layer for breaking spatial inversion symmetry and enhancing magnetic anisotropy of the magnetic layer; the symmetry-breaking layer is an insulating film or a conductive film having a spin Hall angle opposite to that of the spin Hall layer. The present disclosure also provides a magnetic racetrack device and a magnetic tunnel junction device based on the spin-orbit torque superlattice material.

To prevent a decrease in magnetic anisotropy modulation efficiency while improving crystallinity of a magnetic layer in a magnetic memory element. A magnetic memory element includes a storage layer having a variable magnetization direction and a voltage-controlled magnetic anisotropy effect, a reference layer having an invariable magnetization direction, a tunnel barrier layer disposed between the storage layer and the reference layer, and an underlayer disposed below the storage layer. The storage layer included in the magnetic memory element is configured to have a B content of 10 at % or less. The underlayer included in the magnetic memory element is configured to have an orientation different from that of the tunnel barrier layer or to be in an amorphous state.

This disclosure provides a method for fabricating an epitaxial structure, the epitaxial structure itself, and a semiconductor device. The method for fabricating the epitaxial structure includes the following steps: In a reaction chamber, a magnetic layer of gyromagnetic ferrite is epitaxially grown on a semiconductor substrate; the magnetic layer of gyromagnetic ferrite has in-plane uniaxial magnetic anisotropy, and its easy magnetization axis is parallel to the surface of the semiconductor substrate; the semiconductor substrate is placed in an annealing chamber for variable-temperature annealing, and a magnetic field perpendicular to the surface of the semiconductor substrate is applied in the annealing chamber to forcibly change the easy magnetization axis from being parallel to the substrate surface to being perpendicular to the substrate surface; wherein the variable-temperature annealing process involves subjecting the semiconductor substrate to at least one temperature change process between a first temperature and a second temperature. This disclosure, through variable-temperature annealing and the application of a perpendicular magnetic field in the annealing chamber, enables the easy magnetization axis to be changed to be perpendicular to the surface of the semiconductor substrate, thereby achieving a complete overhaul and reconstruction of magnetic properties.

Provided are an inductor element and an inductor component. The inductor element includes a magnetic layer disposed along a first imaginary plane and having uniaxial magnetic anisotropy, and an inductor wiring disposed at a position spaced apart from the first imaginary plane in a first direction intersecting the first imaginary plane and along a second imaginary plane parallel to the first imaginary plane. A roughness of a planar portion of the magnetic layer located in the first imaginary plane is 3 nm or more and 10 nm or less.

This invention discloses a one-dimensional magnetotelluric anisotropy inversion method, system, medium, and device, relating to the field of magnetotelluric inversion technology. The method includes acquiring one-dimensional magnetotelluric observation data to be inverted; constructing a one-dimensional magnetotelluric anisotropy inversion network, AMT1D-Net; the AMT1D-Net network includes an encoder module, a connection layer, a decoder module, and an output layer connected in sequence; the encoder module includes a multi-feature fusion module MSFE-1d, a first convolutional layer, and a downsampling module connected in sequence; the decoder module includes an upsampling module, a multi-feature fusion module MSFE-1d, and a second convolutional layer connected in sequence; inputting the one-dimensional magnetotelluric observation data into the pre-trained AMT1D-Net network to obtain the one-dimensional magnetotelluric anisotropy inversion result; the inversion result is the resistivity values ​​in the x-axis and y-axis directions at different depths underground.

The present disclosure provides an epitaxial structure and a preparation method thereof, and a semiconductor device. The preparation method of the epitaxial structure comprises the following steps: providing a semiconductor substrate; epitaxially growing a magnetic layer of a gyromagnetic ferrite on the semiconductor substrate by a metal organic chemical vapor deposition process to form an epitaxial structure; wherein a magnetic field is applied in a reaction chamber during the epitaxial growth of the magnetic layer of the gyromagnetic ferrite, and the magnetic field has a magnetic field component parallel to the surface of the semiconductor substrate, which can affect the reaction and crystallization process of reaction gas atoms in the reaction chamber, so as to change the crystallization orientation, induce the generation of in-plane uniaxial magnetic anisotropy on the non-textured semiconductor substrate, and grow the magnetic layer of the gyromagnetic ferrite with strong crystallographic texture, thereby realizing the mass production of the magnetic layer of the gyromagnetic ferrite on the semiconductor substrate by the MOCVD process.

This invention discloses a room-temperature mode-selective physical reservoir computation method, belonging to the field of neuromorphic computing. The method is based on an artificially synthesized antiferromagnetic skyrmion spring oscillator, which electrically selects different intrinsic dynamic modes to adapt to different computational tasks: an in-plane alternating current drives a large-amplitude oscillation mode, providing strong nonlinearity to optimize signal conversion tasks; an out-of-plane alternating magnetic field drives a breathing mode, providing strong short-term memory to optimize time series prediction tasks. The device integrates fully electrically driven, multi-channel parallel readout, voltage-controlled magnetic anisotropy stabilization, and planar microcoil excitation units, achieving full on-chip integration of mode selection, signal processing, and stability control. This invention solves the problems of nonlinearity and memory coupling, poor task adaptability, and insufficient room-temperature stability in physical reservoirs, achieving fast, high-precision, and reconfigurable processing of multiple tasks at room temperature using a single device.

The application provides a biosensor based on exchange coupling effect and magnetic elastic coupling effect and a preparation method thereof, and belongs to the field of biosensors. The biosensor comprises, from bottom to top, a flexible substrate, a silver interdigital electrode prepared by a magnetron sputtering process arranged on the surface of the flexible substrate, a PDMS stress transfer layer arranged on the interdigital electrode, a magnetic sensitive unit composed of magnetostrictive layers and soft magnetic layers alternately stacked, and a gold biological interface layer arranged on the topmost layer. The application significantly reduces the interface impedance and optimizes the signal collection efficiency by introducing the silver interdigital electrode. The weak surface stress generated by the combination of biological molecules is efficiently converted into a significant change in magnetic anisotropy by utilizing the synergistic effect of exchange coupling and magnetostrictive effect in the magnetic multilayer film. The biosensor not only solves the problem of slow response to surface stress of traditional devices, but also has excellent mechanical flexibility, high signal-to-noise ratio and high sensitivity, and is suitable for label-free detection of complex biological samples.

An inductor component includes at least one inductor element. The inductor element includes a magnetic layer having uniaxial magnetic anisotropy, a first inductor wiring located on one side of the magnetic layer in a first direction and extending along an imaginary plane intersecting the first direction, a second inductor wiring located on the other side of the magnetic layer in the first direction, and a first via portion electrically connecting the first inductor wiring and the second inductor wiring. The first inductor wiring, the second inductor wiring, and the first via portion constitute at least a part of an inductor that rotates around an axis of rotation extending along a second direction intersecting the first direction. An absolute value of an angle formed by a hard axis or an easy axis of the magnetic layer and the axis of rotation is zero degrees or more and less than 10 degrees.

Provided is an inductor component (2) including: an inductor wiring (10) extending along a plane; pad portions (10A, 10B) at both ends of the inductor wiring (10); a vertical wiring (20) extending perpendicularly to the plane from the pad portions (10A, 10B); and first and second magnetic layers (30, 40) sandwiching the inductor wiring (10), the first and second magnetic layers (30, 40) having uniaxial magnetic anisotropy with the same axis direction, the inductor wiring (10) not extending orthogonally to one of the anisotropy axes (X-axis) in the entire region. By providing the inductor component (2), the magnetic flux generated by the inductor wiring is directed toward one of the anisotropy axes, and the influence of the other anisotropy axis can be suppressed.

The application relates to an annealing method for weakening the magnetic anisotropy of non-oriented silicon steel and a product, and the method comprises the following steps: polishing the two ends and fixing the two ends on the two ends of a power supply; placing the fixed non-oriented silicon steel in a protective atmosphere; applying a pulse current with certain parameters to the non-oriented silicon steel through the power supply to anneal the non-oriented silicon steel, heating the non-oriented silicon steel to a certain temperature to perform high-temperature annealing for a period of time, and promoting the development of gamma texture and lambda texture of the non-oriented silicon steel; and air cooling the non-oriented silicon steel after the electric pulse high-temperature annealing to room temperature in the protective atmosphere. The electric pulse high-temperature annealing process shortens the annealing time of the non-oriented silicon steel, saves energy consumption, and improves the production efficiency.

A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.