221 results about "Magnetic anisotropy" patented technology

The invention discloses a two-dimensional magnetic material device and a preparation method and a regulation and control method thereof, and the regulation and control method comprises the steps: enabling ionic liquid to cover the surface of a two-dimensional magnetic material, enabling the ionic liquid to be in contact with a grid electrode, a source electrode, a drain electrode and the two-dimensional magnetic material, and continuously applying current from the grid electrode to the source electrode and to the drain electrode, and the regulation and control of the two-dimensional magnetic material device are completed. According to the two-dimensional magnetic material device and the preparation method and the regulation and control method thereof provided by the invention, the ionic liquid containing the cationic molecular chains with different lengths is selected to perform intercalation on the two-dimensional magnetic material device, so that regulation and control on the two-dimensional magnetic material device are realized, and the regulation and control flexibility of the two-dimensional magnetic material is greatly improved; and the coercive field, the magnetic anisotropy energy and the carrier concentration of the two-dimensional magnetic material can be changed.

The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.

The invention provides a preparation method of an HDMI (High Definition Multimedia Interface) high-performance common-mode suppressor made of a nanocrystalline material, relates to the technical field of electronic component preparation, and aims to meet the harsh requirement of HDMI high-frequency high-speed signals on common-mode noise suppression, the method comprises the following steps: constructing a multi-layer heterogeneous magnetic film with a gradient interface on a microstructured substrate by utilizing multi-target magnetron sputtering; a selective energy field assisted annealing technology is adopted to realize precise nanocrystallization and magnetic anisotropy regulation and control of the magnetic film; and a high-precision three-dimensional coil structure is integrated by combining a micromachining process. The prepared common-mode suppressor is small in size and high in integration level, shows excellent common-mode suppression efficiency, wide working bandwidth and excellent signal integrity in a high-frequency band, has high reliability, and is suitable for a new generation of HDMI (High-Definition Multimedia Interface).

The invention relates to a sunken porous magnetic alloy ball wave-absorbing material and a preparation method and application thereof.The wave-absorbing material is prepared through the following steps that S1, citric acid, soluble ferric salt, soluble cobalt salt and soluble nickel salt are dissolved in a mixed solvent of ethylene glycol and water, and the mixture is fully stirred to form a uniform mixed solution; and S2, the mixed solution obtained in the step S1 is subjected to spray drying, obtained precursor powder is placed in the air atmosphere to be calcined to remove the carbon source, then the precursor powder is placed in the H2 / Ar atmosphere to be subjected to heating reduction, and the porous FeCoNi alloy balls with the surface pits are obtained and are the target product. The surface of the prepared alloy microsphere has an obvious concave structure, magnetic anisotropy and magnetic performance are enhanced, a small number of pores are generated in the reduction process, impedance matching of the material is optimized, and effective high-frequency electromagnetic absorption is achieved; and due to the synergistic effect of the recesses and the pores, the obtained alloy microspheres have obvious lightweight characteristic, and have good application prospects in the field of electromagnetic absorption.

To increase output signal strength when detecting foreign matter on the basis of a signal output from a sensing element configured to sense a magnetic field through the magnetic impedance effect.SOLUTION: A detection device is provided, comprising a sensing element containing a soft magnetic material, having a longitudinal direction and lateral direction, exhibiting uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, the sensing element being configured to sense a magnetic field through the magnetic impedance effect; first and second guiding members provided to face each other in the longitudinal direction with the sensing element in between to guide magnetic field lines to the sensing element; and an application member for applying a bias magnetic field to the sensing element. The detection device detects foreign matter present on a side opposite the sensing element with respect to the first guiding member, and the printing member is provided on a side opposite the sensing element with respect to the first guiding member.SELECTED DRAWING: Figure 6

The invention provides a magnetron sputtering tray and a magnetron sputtering device, and belongs to the technical field of micro-nano magnetic sensing chip preparation and coating. The magnetron sputtering tray comprises a substrate; the bearing assembly is located in the middle of the surface of the substrate and is suitable for bearing a sample subjected to magnetron sputtering; and the two groups of positioning assemblies are symmetrically distributed on two sides of the bearing assembly and are constructed into a shape for positioning the permanent magnet, so that the permanent magnet can provide a static magnetic field which acts on the sample and is parallel to the surface of the substrate, and the magnetic multi-component alloy film subjected to magnetron sputtering on the sample has uniaxial magnetic anisotropy.

The invention relates to the technical field of magnet materials, and discloses a high-temperature-resistant neodymium-iron-boron magnet and a preparation method of the high-temperature-resistant neodymium-iron-boron magnet. The high-temperature-resistant neodymium-iron-boron magnet comprises the following components in parts by weight: 25-30 parts of neodymium, 60-65 parts of iron, 1.0-2.0 parts of boron, 3.0-5.0 parts of lanthanum, 0.5-2.0 parts of zirconium, 0.5-1.0 part of molybdenum and 0.1-0.5 part of nano ceramic particles, and the invention further provides a preparation method of the high-temperature-resistant neodymium-iron-boron magnet. S1, preparing and mixing alloy raw materials; s2, nano ceramic coating treatment is carried out; s3, magnetic field assisted pressing forming; and S4, rapid induction sintering. Through the magnetic field assisted directional pressing process, effective control over grain orientation in the pressing forming stage is achieved, magnetic domain arrangement is more ordered, and the residual magnetism and the energy product are improved. Different from a forming mode with disordered grain directions and poor magnetic anisotropy in an existing common cold pressing process, the technical defect that the utilization rate of magnetic performance is low due to poor orientation is overcome.

Provided are an anisotropic electroconductive film and an electroconductive connector that are capable of achieving lower resistance, higher frequency characteristics, higher resolution, higher contact stability resulting from reduction of contact pressure, higher current, and higher durability than in the past.　An anisotropic electroconductive film 110 includes: an insulating thin film 112 made of a polymer material having elasticity; and particles 200 that are dispersed in the insulating thin film 112 and are imparted with magnetic anisotropy so that the easy magnetization direction of the particles 200 is in the thickness direction of the insulating thin film 112, the particles 200 being made of a substance exhibiting topological antiferromagnetic characteristics. The particles 200 are arranged apart from each other in the in-plane direction of the insulating thin film 100, the particles 200 forming a plurality of conduction parts 114 capable of conducting in the thickness direction. Each conduction part 114 is formed from a single particle 200 (or a plurality of particles 200 arranged in the thickness direction). Each of the particles 200 has a south-pole region 604 and a north-pole region 602 formed at two ends in a direction following the easy magnetization direction. The magnetic flux of a virtual magnetic field is concentrated at the south-pole region 604 and the north-pole region 602.

A memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer, a free layer, a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and a platinum-containing layer containing platinum and at least one element selected from iridium, hafnium or ruthenium. The platinum-containing layer contacts the free layer.

The invention relates to the technical field of heat insulation and demagnetization refrigeration, in particular to a heat insulation and demagnetization refrigeration material and a preparation method and application thereof. Wherein the heat insulation and demagnetization refrigeration material is an Eu2ZnGe2OS6 crystal. The heat insulation demagnetization refrigeration material is an Eu2ZnGe2OS6 crystal and has relatively small magnetic anisotropy, and a long-range magnetic orderliness phenomenon is not observed at 1.8 K or above. Compared with an existing traditional magnetic refrigeration material, when the magnetic field is adiabatically reduced from 7T to 0T, the material shows the maximum negative magnetic entropy difference as high as 43.11 J * kg <-1 > * K <-1 >, and has a wide development prospect in adiabatic demagnetizing refrigeration application in a 2-16K temperature zone and a sub-Kelvin temperature zone.

A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance state to the first resistance state is lower than a second threshold voltage for switching the MTJ device from the first resistance state to the second resistance state. The method includes applying a first voltage pulse across the MTJ device with an amplitude having an absolute value equal to or greater than the first threshold voltage and lower than the second threshold voltage, thereby setting the MTJ device to the first resistance state regardless of whether the MTJ device initially is in the first or second resistance state.

Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magnetic anisotropy is formed in a ferromagnetic layer by means of spin-orbit torque, and when an external magnetic field in a direction perpendicular to the pulse current is applied, the inversion of magnetization occurs by means of additional torque. The movement of a magnetic domain wall is performed by the inversion of magnetization, spin electrons applied thereby are scattered, and a Hall voltage is generated according to the anomalous Hall effect. The generated Hall voltage increases according to the number of applications of the pulse current or pulse voltage.

The invention relates to a PML-coupled three-dimensional magnetotelluric anisotropy parallel finite element forward modeling method. The method comprises the following steps: according to a continuity condition of an electromagnetic field and a dispersion relation of a plane wave in TE and TM modes, determining a non-reflection condition which needs to be met by a PML; determining a parameter form of the PML meeting stable absorption performance by utilizing a relationship between an incident field and a transmission field in the lossy medium; constructing an improved wide-frequency-band PML parameter tensor according to a non-reflection condition, a parameter form meeting stable absorption performance and preset characteristic parameters; and realizing finite element forward modeling under a preset multi-level parallel architecture by using the improved wide-frequency-band PML parameter tensor to obtain a finite element forward modeling result. The method is accurate, efficient and wide in application range.

A memory cell capable of reversing magnetization on the basis of voltage drive is achieved without providing a selector element in the memory cell. A storage device includes: a memory cell provided with a magnetoresistive effect element; a word line connected to one end of the magnetoresistive effect element; and a bit line connected to another end of the magnetoresistive effect element. The magnetoresistive effect element may have a voltage controlled magnetic anisotropy (VCMA) effect. A driver configured to apply a reversing voltage for reversing a magnetization direction of the magnetoresistive effect element on the basis of the VCMA effect may be included. The driver may switch a voltage applied to the memory cell such that a reversing voltage is applied to a selected cell while a non-reversing voltage is applied to a non-selected cell, in which the non-reversing voltage does not reverse a magnetization direction of the magnetoresistive effect element.

The invention discloses a magnetic anisotropy quantitative method and system for detecting terahertz signals based on a rotating magnetic field, and the method comprises the steps: (1), obtaining a to-be-detected magnetic / non-magnetic material film which comprises at least one non-magnetic film layer with strong spin-charge flow conversion and at least one magnetic film layer; (2) transmitting femtosecond laser pumping pulse to the magnetic / non-magnetic material film to be detected, and radiating terahertz waves; (3) applying a magnetic field to the magnetic / non-magnetic material film to be tested; (4) setting the relative time delay of the femtosecond laser detection pulse and the femtosecond laser pumping pulse to the signal position of the terahertz wave, continuously rotating the angle of applying the magnetic field, and detecting terahertz wave signals at different magnetic field angles through the femtosecond laser detection pulse; and (5) calculating to obtain the magnetic anisotropy field of the magnetic thin film layer according to the terahertz wave signals under different magnetic field angles. The method does not need to contact a sample for measurement, does not need to carry out micro-nano processing on a detection material, is simple in preparation and test processes, and can realize nondestructive detection.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention discloses a method for regulating and controlling magnetic anisotropy of a Cr-based MXene material through charges. The method comprises the following steps: synthesizing an MAX precursor; the MAX precursor is subjected to etching and stripping, and a single-layer Cr-based MXene nanosheet is obtained; on the basis of a single-layer Cr-based MXene nanosheet, a substrate, an electrode and ionic liquid are used for synthesizing and regulating a Cr-based MXene material charge-doped ionic liquid gate structure. The method has the remarkable effects that the magnetic anisotropy (MAE) of the Cr2TiC2O2 material is improved through charge doping, the magnetic easy axis direction is regulated and controlled, the magnetism and the magnetic phase change can be accurately regulated, the magnetic order temperature of the material is remarkably improved, and the application potential of the material in a high-temperature environment is widened.

Provided is a non-oriented electrical steel sheet that is excellent in iron loss and magnetic anisotropy under high magnetic flux and high frequency conditions, and a method for manufacturing the same. [Solution] A method for producing a grain-oriented electrical steel sheet includes the steps of heating a slab containing, by weight, 1.5 to 6.5% Si, 0.0005 to 3.5% Al, 0.01 to 3.0% Mn, 0.005 to 5.0% Cr, 0.0005 to 0.03% S, the balance being Fe and other unavoidable impurities, at 1050 to 1220°C, finish hot rolling the slab to obtain a hot-rolled sheet, hot-rolling the hot-rolled sheet at 850 to 1150°C for 30 to 300 seconds, cold-rolling the hot-rolled sheet that has been annealed to obtain a cold-rolled sheet, heating the cold-rolled sheet, and rolling the heated cold-rolled sheet. and final annealing at 600 to 1150°C for 10 to 300 seconds, wherein the cold rolling satisfies the following [Relationship 2], wherein the heating rate in the temperature range of 300 to 500°C during heating is 5 to 150°C / s, and the gas atmosphere in the temperature range of 500 to 750°C during the final annealing is composed of, by volume, 15 to 99.99% hydrogen, 0.0001 to 0.0030% oxygen, and the balance being an inert gas, and the oxygen content in the gas atmosphere in the temperature range of 800 to 1100°C during the final annealing is 1 to 1.5 times that in the temperature range of 500 to 750°C. [Relationship 2] Maximum temperature of cold-rolled sheet surface during cold rolling < 200 × cold rolling reduction / 100 + 40

A method for preparing ultrathin non-oriented silicon steel with low magnetic anisotropy, belonging to the field of non-oriented silicon steel production technology, includes the following steps: smelting molten steel according to a set chemical composition; continuous casting, hot rolling, pickling, first-stage cold rolling, intermediate annealing, second-stage cold rolling, finished product annealing, and coating to obtain non-oriented silicon steel with a thickness of 0.10mm~0.15mm. This invention, through the synergistic control of a two-stage high-reduction-rate cold rolling process and an intermediate low-temperature annealing process, forms a relatively uniform, continuous, medium-strength γ-fiber recrystallization texture and a relatively weak recrystallization texture on the finished annealed plate. This achieves the purpose of reducing magnetic anisotropy and increasing the magnetic flux density B. 50 Anisotropy ≤ 0.5%, iron loss P 10 / 400 Anisotropy ≤ 4%, iron loss P 10 / 1000 Anisotropy ≤ 4%.

The present invention relates to the field of magnetic functional materials. The present invention discloses a use of a rare earth fluoride single crystal in magnetic refrigeration, a magnetic refrigeration method and a magnetic refrigeration device. A magnetocaloric material of the series is lithium rare earth fluoride, with the chemical formula of LiREF4, wherein RE is one or more of rare earth elements gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium. A magnetocaloric material single crystal of the series has extremely strong magnetic anisotropy. By applying a varying magnetic field of 0-20 kOe along the easy magnetization axis direction of the magnetocaloric material, LiGdF4, LiTbF4, LiHoF4, LiDyF4, LiErF4, LiYbF4 and LiTmF4 obtained isothermal magnetic entropy changes of 50.35 J·kg−1·K−1, 21.12 J·kg−1·K−1, 24.98 J·kg−1·K−1, 24.45 J·kg−1·K−1, 21.95 J·kg−1·K−1, 14.7 J·kg−1·K−1 and 0.692 J·kg−1·K−1, respectively, at 1.8K, 4K, 4K, 1.8K, 1.8K, 1.8K, and 18K. Wherein, the thermal conductivity of LiTbF4 and LiErF4 reaches 50 W·K−1·m−1 at 25K.

The invention relates to the technical field of heat-insulating and demagnetizing refrigeration, and discloses a heat-insulating and demagnetizing refrigeration material based on a Trellis crystal lattice and a preparation method and application of the heat-insulating and demagnetizing refrigeration material. The chemical formula of the heat insulation and demagnetization refrigeration material based on the Trellis crystal lattice is Gd2GeB2O8. A magnetic test result of the Gd2GeB2O8 crystal shows that the magnetic anisotropy of the crystal material is relatively weak and tends to magnetic isotropy, and a long-range magnetic orderliness phenomenon is not observed above 1.8 K. And when adiabatic demagnetization is carried out under initial conditions that T is equal to 3K and B is equal to 7T, the material can reach the maximum negative magnetic entropy difference of 51.68 J * kg <-1 > * K <-1 >, which shows that the Gd2GeB2O8 has a better application prospect in a 3-17K temperature zone and a sub-Kelvin temperature zone.

The invention relates to the field of optical fibers, in particular to a D-type optical fiber based on Fe3GaTe2 nanosheets and a preparation method and application of the D-type optical fiber. The invention discloses a D-type optical fiber based on a Fe3GaTe2 nanosheet. The D-type optical fiber comprises a D-type optical fiber and a Fe3GaTe2 layer deposited on a D-type plane of the D-type optical fiber. By utilizing the evanescent field characteristic of the D-type optical fiber, the Fe3GaTe2 nanosheet is deposited on the D-type plane of the D-type optical fiber, and magnetic anisotropy change (such as magnetization direction switching) is generated under the action of an external magnetic field, so that the effective refractive index of the optical fiber is changed; the change is converted into an optical path difference in the Michelson interferometer. Finally, the magnetic field intensity can be inverted by measuring the FSR change of the interference spectrum. The room-temperature MA adjustability of the Fe3GaTe2 nanosheets provides a larger refractive index change range (superior to that of magnetic fluid), and the nanosheets are not easy to degrade, so that the D-type optical fiber has higher sensitivity and temperature performance.

This disclosure presents systems, devices, and methods that use magnetometers to measure large magnetic moments with strong magnetic anisotropy. A torque magnetometer may include an actuator driven by a motor, a load cell coupled to the actuator, a rotatable spool having a platform configured to hold a sample of a superconductor material, where the rotatable spool is coupled to the load cell by a first line, a pulley, and a second line extending between the rotatable spool and a counterweight, where the second line is positioned on the pulley. Movement of the actuator may cause the rotatable spool to rotate an angle of the platform relative to a magnetic field about the rotatable spool, and the load cell is capable of measuring the tension on the first line.

An object of the present invention is to provide a non-oriented electrical steel sheet in which a specific texture is developed and magnetic anisotropy is maximized through heating, first soaking, second soaking, and cooling steps in an annealing step after preliminary cold rolling, and a manufacturing method thereof. The non-oriented electrical steel sheet of the present invention is characterized in that it contains, by weight %, 1.5 to 5.0% Si, 0.1 to 2.0% Al, 0.1 to 2.0% Mn, residual Fe, and unavoidable impurities, and satisfies the following formula 1: [Formula 1] V{001} <001> / V{011} <001> ≦0.65 (In Equation 1, V{001} <001> is {001} <001> The percentage of grains with an orientation within 15° of V{011} <001> is {011} <001> This indicates the percentage of grains with orientations within 15° of the

The application relates to a three-dimensional magnetotelluric anisotropy parallel finite element forward method coupled with PML. The method comprises the following steps: determining a non-reflection condition required by PML according to the continuity condition of an electromagnetic field and the dispersion relation of a plane wave in TE and TM modes; determining the parameter form of the stable absorption performance of PML by using the relationship between the incident field and the transmission field in a lossy medium; constructing an improved wide-band PML parameter tensor according to the non-reflection condition, the parameter form of the stable absorption performance and preset characteristic parameters; and realizing finite element forward by using the improved wide-band PML parameter tensor under a preset multi-level parallel architecture to obtain a finite element forward result. The method can be accurate, efficient and widely applicable.

A pressure stress induced magnetic anisotropy detection system under weak alternating current excitation comprises a detection probe which comprises a fixed frame, a detection coil, a U-shaped iron core and two groups of excitation coils connected in series; the detection probe is tightly attached and fixed to the test piece; the test piece is fixed on the pressure stress loading device; the output end of the signal generator is electrically connected with the input end of the power amplifier, and the output end of the power amplifier is electrically connected with the exciting coil; an output voltage detection end of the power amplifier is connected with a first input channel of the oscilloscope; the detection coil is connected with a second input channel of the oscilloscope; the upper computer is connected with an output channel of the oscilloscope; a method for detecting and analyzing magnetic anisotropy caused by compressive stress under weak alternating current excitation comprises the following steps: S0, determining Pm, fn, V1 and theta q applied by a test piece, and preferably selecting excitation signals; s1, carrying out magnetization detection on the test piece to obtain detection information; and S2, analyzing the compressive stress induced magnetic anisotropy characteristics of the test piece under weak alternating current excitation.

The invention relates to an amorphous alloy wire continuous annealing device and method based on an alternating load auxiliary magnetic field. In magnetic field equipment of the device, a transverse Helmholtz coil transversely surrounds the periphery of a heat treatment furnace, the axial direction of the transverse Helmholtz coil is perpendicular to the wire penetrating direction, and a longitudinal Helmholtz coil longitudinally surrounds the periphery of the heat treatment furnace, and the axial direction of the longitudinal Helmholtz coil is parallel to the wire penetrating direction; in the heat treatment furnace, a hearth is arranged in a furnace box, and heating equipment is arranged on the hearth; in the alternating load equipment, a clamp is arranged on a three-dimensional combined table to clamp the amorphous alloy wire, and the tensile load is detected; in the winding device, a wire feeding roller winds the amorphous alloy wire and feeds the wire to the heat treatment furnace before annealing is started, after the amorphous alloy wire is clamped by the alternating load devices on the two sides, annealing is conducted under the conditions of a dynamic magnetic field and alternating loads, and a wire winding motor drives a wire winding roller to complete wire winding. Compared with the prior art, isotropic release of an internal stress field of the amorphous alloy wire is effectively promoted, and the amorphous alloy wire is better designed for materials with specific magnetic anisotropy requirements.

According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

A polymer-assisted 3D printing method and ink compositions are used to manufacture magnetocaloric devices having many applications including in heat pumps, refrigerators, etc. The ink compositions and printing methods can produce compositionally graded, anisotropically aligned magnetocaloric architectures with designed pores and channels, to bring forth significant improvement in heat exchange efficiency.