6 results about "Zero field" patented technology

The application relates to the technical field of simulation calculation and discloses a hysteresis loop simulation method based on mumax3, which comprises the following steps: obtaining the parameters of a magnetic material, and establishing a simulation model according to the parameters of the magnetic material; applying a field strength to the simulation model to obtain a fully saturated state of the magnetic material; applying a cosine-type field strength gradually decreasing with time in a peak value to the simulation model in the saturated state, and simultaneously performing LLG equation solving until the field strength peak value is reduced to below a preset threshold value, and taking the corresponding magnetic moment state as a zero field strength state; applying an alternating field strength to the simulation model in the zero field strength state, and simultaneously performing LLG equation solving calculation to complete loop simulation, so that a hysteresis loop is obtained. The magnetic material in the saturated state is demagnetized, the magnetic moment distribution of a demagnetized state under the zero field strength which is in line with the actual physical situation is obtained, and the state is taken as the basis of Mumax3 micromagnetic simulation calculation, so that a hysteresis loop with higher precision can be obtained.

The application relates to the technical field of quantum materials, in particular to a van der Waals heterojunction type high-efficiency superconducting diode and a preparation method and application thereof. The superconducting diode comprises a substrate layer, an electrode layer, an Ising superconducting layer, a magnetic material layer and a packaging layer which are sequentially stacked from bottom to top; or, the superconducting diode comprises a substrate layer, a magnetic material layer, an Ising superconducting layer, an electrode layer and a packaging layer which are sequentially stacked from bottom to top. A heterojunction is formed by the Ising superconducting layer and the magnetic material layer to realize double symmetry cooperative breaking, and a system capable of realizing high-efficiency superconducting diode effect (SDE) is constructed by combining a vertical magnetic field training technology; wherein, the magnetic material layer breaks time reversal symmetry, and the Ising superconducting layer and the magnetic material layer form a heterojunction to break spatial inversion symmetry. The superconducting diode can maintain super-high SDE efficiency under zero field and has strong zero-field stability.

The application discloses a spin terahertz emitter with adjustable polarization without an external magnetic field and a manufacturing method thereof. A metal thin film layer heterostructure is deposited on a surface of a glass substrate. A ferromagnetic layer is a FeNi thin film layer, an anti-ferromagnetic layer is an IrMn3 thin film layer, and an interface between the FeNi thin film layer and the IrMn3 thin film layer is an exchange coupling interface subjected to directional magnetic field induction treatment. A surface of the metal thin film layer heterostructure is a periodic stripe array structure. The manufacturing method comprises the following steps: a magnetron sputtering process is used to sequentially deposit a ferromagnetic layer, an anti-ferromagnetic layer and a protective layer; the exchange coupling interface is formed through directional magnetic field induction treatment; and a micro-nano processing process is used for patterning treatment. Beneficial effects are as follows: under the condition of no external magnetic field, reliable spin current generation, spin-charge conversion and terahertz radiation can be realized. The stripe patterning structure realizes linear polarization, elliptical polarization and near-circular polarization output. The 'zero-field emission function' and the 'polarization control function' are integrated in the same thin film device system, and the system complexity is reduced.

The application provides a semi-metal compensation ferrimagnetic material, the chemical formula of the semi-metal compensation ferrimagnetic material is CrFeS2, the semi-metal compensation ferrimagnetic material has a hexagonal NiAs type crystal structure and belongs to the 194th space group, and a preparation method thereof comprises the following steps: sealing Cr powder, Fe powder and sulfur blocks and a transmission medium iodine in a vacuum quartz tube; placing the vacuum quartz tube in a heating furnace and heating at 780-920 DEG C for 4-30 days, and then quenching to a warm house. The semi-metal compensation ferrimagnetic material provided by the application has the characteristics of great perpendicular magnetic anisotropy and magnetic compensation characteristics, so that the material can realize zero-field cold exchange bias, and a unidirectional magnetic field with different sizes can control the direction of the exchange bias, and thus the material has a wide application prospect in the field of spintronics.

A controllable source audio frequency magnetotelluric sounding transmitting end electrode arrangement system and method belong to the technical field of electromagnetic prospecting, and particularly relate to the technical field of electromagnetic sounding electrode arrangement. The system and method solve the technical problem that the current CSAMT transmitting end electrode arrangement technology cannot simultaneously achieve the core target of "greatly reducing resistance and increasing current + zero field source distortion + high construction feasibility". The system and method comprise a main dipole unit and A-side and B-side distributed auxiliary electrode arrays. The main dipole unit is composed of A0 and B0 main transmitting electrodes. The A-side auxiliary electrode array is arranged in a direction away from the B0 along a dipole axis, the B-side auxiliary electrode array is arranged in a direction away from the A0 along the dipole axis, and the double-side arrays are completely symmetrical along the dipole center. All same-side electrodes are connected in parallel at an equal potential to a transmitter, and the transmitting current is in-phase and equal potential. The system and method only need short electrodes and artificial shallow pits for arrangement, the grounding resistance is greatly reduced, the transmitting current is steadily increased, and the ideal horizontal electric dipole field source characteristics are strictly guaranteed without field source distortion.