The invention discloses a vertical
magnetic anisotropy GaN-based spin polarized
light emitting diode and a preparation method thereof, and the core of the preparation method is as follows: firstly, converting 1-3
layers of
graphene into a circular ring shape on n-GaN through
dry transfer and
laser direct writing; and secondly, in an ultrahigh vacuum environment, continuously and sequentially
sputtering and depositing an MgO tunneling layer, a single-layer CoFeB ferromagnetic layer with vertical
magnetic anisotropy and an ITO transparent conductive layer in the same
sputtering cavity without breaking vacuum. According to the invention, an inverted structure is utilized to enhance heat dissipation and optimize a
spin injection interface, and polarized light observation easy to observe is realized. Meanwhile,
graphene is used for blocking the defect of MgO, conductance mismatch is solved,
spin injection efficiency is enhanced, zero-field
perpendicular magnetic anisotropy is achieved through single-layer CoFeB, ITO serves as a conducting layer and also serves as a light window, a full-vacuum magnetron
sputtering process is combined to guarantee atomic-scale interface cleanness, and finally the device obtains high-spin-polarization polarized light at the
room temperature under the zero external
magnetic field; and meanwhile, the
spin injection efficiency is high, the spin service life is long, the operation is stable under
high current density, the process is simplified, the cost is low, and the observation is easy.