53 results about "Zero field" patented technology

The invention provides a high-sensitivity magnetic field measurement method based on a quantum measurement principle and a related device, and belongs to the technical field of magnetic field measurement. The method comprises the following steps: correcting a zero field splitting parameter by using an initial magnetic field to enhance the stability of compression strength, and driving an NV cluster to generate a spinning compression state through microwaves to obtain a compression state probe; taking the compressed-state probe as an initial state of the quantum probe, and performing space-time polarization modulation decoupling on the target magnetic field and the environment magnetic field to obtain a decoupling signal; performing quantum phase-locked interference processing on the decoupling signal and a given reference microwave frequency to obtain a frequency shift signal; and performing magnetic field integral reconstruction and sensitivity calibration by using the frequency shift signal and combining the compression parameter of the compressed probe to obtain a final target magnetic field at the detection moment. Based on the quantum measurement principle, in combination with quantum coherent regulation, space-time modulation decoupling and the like, accurate extraction of the target magnetic field can be realized in a high electromagnetic interference environment, and the measurement sensitivity and accuracy are improved.

The magnetorheological fluid comprises an ionic liquid, a basic liquid, magnetic particles and an additive, and is characterized in that the magnetorheological fluid contains imidazole cations, the general formula of the imidazole cations is [R1R2N +] C3H4, R1 is selected from substituted or unsubstituted alkyl with the carbon atom number of 1-10, and R2 is selected from substituted or unsubstituted alkyl with the carbon atom number of 1-10. The magnetorheological fluid disclosed by the invention has excellent sedimentation stability, relatively low zero-field viscosity and relatively high shear yield stress.

The invention belongs to the technical field of magnetorheological fluid preparation, and particularly relates to iron-cobalt nanoparticles, a preparation method of the iron-cobalt nanoparticles and application of the iron-cobalt nanoparticles in magnetorheological fluid. The iron-cobalt nanoparticles contain iron and cobalt, are amorphous and spherical, and have an average particle size of 20-35 nm. The iron-cobalt nano-particles are excellent in magnetization performance, the saturation magnetization of the iron-cobalt nano-particles can reach 220 emu / g, and compared with ferromagnetic nano-particles, the saturation magnetization of the iron-cobalt nano-particles can be improved by 44.7%. Moreover, the magnetorheological fluid prepared on the basis of the iron-cobalt nanoparticles is excellent in performance, the zero-field viscosity of the magnetorheological fluid can be as low as 0.63 Pa.s, and the maximum shear stress corresponding to the shear rate of 0.1 s <-1 > under a 1T magnetic field can reach 68KPa.

The invention relates to the technical field of magnetic materials, and discloses a binuclear dysprosium single-molecular magnet and a preparation method thereof. The high-yield [Dy2L2 (MeOH) 2 (NO3) 2)]. 3MeOH is prepared by adopting a room-temperature volatilization method, and compared with methods such as high-temperature and high-pressure solvothermal synthesis and poor solvent diffusion, the method has the advantages of simple reaction conditions, easiness in operation, convenience and the like. The crystal structure of the binuclear dysprosium single-molecule magnet material is a triclinic system, the space group is P-1, and the cell parameters are as follows: # imgabs0 # imgabs1 #, alpha is equal to 109.4020 (10) degrees, beta is equal to 93.1900 (10) degrees, and gamma is equal to 98.2070 (10) degrees; the binuclear dysprosium single-molecule magnet synthesized by the method can show typical slow relaxation behavior in a zero field, has the characteristics of a single-molecule magnet, and can be applied to the fields of quantum calculation and ultrahigh-density information storage.

The present invention relates to a method for determining the coupling between magnetometers in an array of N magnetometers (e.g., by means of an optically pumped magnetometer), wherein each magnetometer includes a field cancellation system that can be enabled to operate the magnetometer in a zero field. The method includes a first phase (P1), in which the N magnetometers are divided into N - 1 magnetometers with the field cancellation system deactivated and one measuring magnetometer with the field cancellation system activated. The first phase includes: - generating (GENj) by these magnetometers a plurality of reference magnetic fields with known amplitudes and different directions, - measuring (MESi) by the measuring magnetometer the ambient magnetic field on a plurality of measurement axes, - determining (CALCij) the coupling coefficient between the measuring magnetometer and each of the N magnetometers based on the measured values and these known amplitudes.

The invention relates to a laser-assisted regulation tunnel magnetoresistive sensor, a preparation method thereof and a zero field regulation method. The tunnel magnetoresistive sensor includes: a substrate; a multi-film structure formed on the substrate, wherein the multi-film structure comprises a magnetic tunnel junction and a spin current generation layer which are stacked; the magnetic tunnel junction is arranged close to the substrate; the laser transmission layer is formed on the multi-film structure, and the laser transmission layer has a laser transmission property. According to the embodiment of the invention, the magnetic anisotropy potential barrier can be reduced, so that the current density required by pulse current regulation and control is reduced, and the power consumption is reduced.

The invention provides an input current optimization method based on MPI orthogonal model constant-speed rotary scanning, which aims at a rotary scanning device formed by combining two zero field line devices constructed by two groups of coils, and comprises the following steps of: controlling the input current of the two groups of coils which generate mutually vertical zero field lines to be periodic current; therefore, the fusion null field line generated by the rotary scanning device is controlled to perform periodic constant-speed rotation so as to determine the position of the fusion null field line at any moment. According to the method, the problem that the FFL of an existing selected model rotates irregularly can be solved, the effect of uniform-speed scanning is achieved, the position of the FFL is controllably observed, and the controllability of MPI is improved.

The present application provides a self-calibrating three-axis atomic magnetometer for realizing integrated vector and scalar measurement. The magnetometer includes a sensor probe and an electronics box. A single-beam pump laser generated by a laser generating unit in the electronics box acts on an alkali metal atomic gas cell in the sensor probe. According to the zero-field resonance principle of alkali metal atoms, the pump laser interacts with the alkali metal atoms to generate an optical absorption signal containing environmental magnetic field information. A photoelectric detection unit in the electronics box converts the optical signal into an electrical signal, and a three-axis modulation compensation circuit demodulates the photoelectric signal and generates a compensation signal to achieve precise three-axis measurement of the magnetic field. The present invention can make the magnetometer operate in the Mz mode or the CPT mode to realize scalar measurement of the magnetic field, thereby realizing self-calibration of the three-axis vector of the magnetometer. By switching the measurement range, the present invention can achieve high-sensitivity and long-term accurate three-axis omnidirectional magnetic field measurement at different measurement ranges.

The invention discloses a multi-core J coupling constant-based pH measurement method, which comprises the following steps of: 1, preparing a series of compound samples with different pH values, and measuring J coupling constants of compounds in the samples; 2, drawing a coupling constant and pH relation curve of the compound J, and deducing a pH calculation formula; and 3, measuring the J coupling constant of the compound-containing sample to be measured, and determining the pH value of the sample to be measured. According to the method, the J coupling constant is measured through a nuclear magnetic resonance spectrum method or a zero field-near zero field J coupling spectrum method, and the pH value of the surrounding environment of the compound can be measured.

The invention provides amorphous magnetic particles and a preparation method thereof, magnetorheological fluid and a preparation method and device thereof. The coercive force of the amorphous magnetic particles provided by the invention is less than 1Oe; the saturation magnetization of the amorphous magnetic particles is greater than or equal to 160 emu / g. According to the amorphous magnetic particles provided by the invention, the magnetorheological fluid has relatively high stability, low zero field viscosity and high shear yield stress under a magnetic field.

The application relates to the technical field of simulation calculation and discloses a hysteresis loop simulation method based on mumax3, which comprises the following steps: obtaining the parameters of a magnetic material, and establishing a simulation model according to the parameters of the magnetic material; applying a field strength to the simulation model to obtain a fully saturated state of the magnetic material; applying a cosine-type field strength gradually decreasing with time in a peak value to the simulation model in the saturated state, and simultaneously performing LLG equation solving until the field strength peak value is reduced to below a preset threshold value, and taking the corresponding magnetic moment state as a zero field strength state; applying an alternating field strength to the simulation model in the zero field strength state, and simultaneously performing LLG equation solving calculation to complete loop simulation, so that a hysteresis loop is obtained. The magnetic material in the saturated state is demagnetized, the magnetic moment distribution of a demagnetized state under the zero field strength which is in line with the actual physical situation is obtained, and the state is taken as the basis of Mumax3 micromagnetic simulation calculation, so that a hysteresis loop with higher precision can be obtained.

The present invention discloses a zero-field-cooled room-temperature exchange bias permanent magnet material, which is composed of two rare earth elements Pr and Gd, and Co element. First, a cast Pr-Gd-Co compound is obtained through melting, and then a Pr-Gd-Co thin strip, that is, the zero-field-cooled room-temperature exchange bias permanent magnet material, is obtained through melt spinning. The atomic ratio satisfies 1:3, and the chemical formula is Pr 1‑ x Gd x Co3, where the value range of x is 0.2 ≤ x ≤ 0.8; the Curie temperature ranges between -400 K and 550 K; the phase structure is a rhombohedral PuNi3-type crystal structure. Its preparation method includes: 1. Preparation of the cast Pr-Gd-Co compound; 2. Preparation of the zero-field-cooled room-temperature exchange bias permanent magnet material. As an application of the permanent magnet material, at room temperature, when the external magnetic field is 2 T, the coercivity is 1.37 - 12.88 kOe; the exchange bias field is 0.2 - 5.38 kOe; at 10 K, when the external magnetic field is 5 T, the coercivity is 16.47 - 36.23 kOe; the exchange bias field is 2.73 - 14.92 kOe. The advantages of the present invention are that it has large coercivity, strong exchange bias field under zero-field-cooled conditions, good temperature stability, and simple process.

The invention belongs to the technical field of condensed state physics and material research, and particularly relates to a heavy rare earth transition metal oxide magnetocaloric material screening method which comprises the following steps: obtaining zero field cooling of a test sample and a magnetization intensity-temperature curve of the field cooling, and deriving the magnetization intensity-temperature curve of the field cooling to obtain a magnetic field temperature curve of the field cooling; then the absolute value of the derivative of the field cooling magnetization intensity-temperature curve is obtained, and an absolute value curve is obtained; calculating an average magnetic phase transition temperature based on the absolute value curve; calculating the variance of the absolute value curve at the average magnetic phase transition temperature; calculating the dimensionless variance of the absolute value curve based on the variance of the absolute value curve at the average magnetic phase transition temperature; obtaining an isothermal magnetization curve of the test sample and calculating a magnetic entropy change value; and based on the dimensionless variance value, establishing a quantitative relationship between the magnetic phase change interaction intensity and the magnetic entropy change value, and further screening out a target sample. And theoretical support is provided for development and physical mechanism analysis of the low-temperature heavy rare earth based giant magnetocaloric material.

The present application relates to a kind of cobalt-based spinel ferrite nanoparticles with zero-field magnetic quantum tunneling properties and its application, the inside of the nanoparticle has the topological structure of broken spatial symmetry;The topological structure includes the first topological domain and the second topological domain distributed staggeredly in space, so that the cobalt-based spinel ferrite nanoparticle produces intrinsic transverse tunneling energy level splitting under zero applied magnetic field.The sharp stepwise magnetization jump of the cobalt-based spinel ferrite nanoparticle of the present application at zero field can realize the high sensitivity nonlinear response to weak magnetic field, and can be applied to the preparation and development of low-temperature quantum sensing probe or multi-level nonvolatile logic memory.

A spin-orbit torque (SOT) magnetic device with synthetic antiferromagnetic (SAF) structure, including a SOT layer for providing a spin current, a SAF structure composed of a first ferromagnetic layer, a nickel oxide (NiO) exchange coupling layer and a second ferromagnetic layer, and a capping layer on the SAF structure. This magnetoelectric device of oxide SAF structure can achieve zero-field switching through current-induced SOT, and can be used as the free layer of a magnetoresistive random access memory (MRAM).

The invention discloses a zero-field spin-orbit moment memory with a ferromagnetic layer component gradient structure and a preparation method thereof, the core structure of the memory comprises a CoFeB ferromagnetic layer with a vertical component gradient, and magnetic moments at two sides of a domain wall generate asymmetry in amplitude or orientation by regulating and controlling gradient distribution of Co, Fe and B elements and inducing non-uniform Dzyaloshiski-Moriya interaction (DMI); furthermore, domain wall chiral characteristics are weakened, a net effective field is formed, and deterministic magnetization overturning without assistance of an external magnetic field is finally realized. In the preparation process, a magnetron sputtering technology is adopted, a heavy metal strong spin orbit coupling layer, a vertical magnetic anisotropy magnetic free layer with component gradient, a tunnel barrier layer, a magnetic vertical reference layer, an artificial antiferromagnetic pinning layer and a covering layer are stacked in sequence, and a magnetic tunnel junction (MTJ) unit is prepared through annealing and micro-nano processing technologies. The invention provides an efficient solution for the research and development of controllable magnetic memories and logic devices, and has a wide application prospect in the field of high-density magnetic memories.

The invention discloses a vertical magnetic anisotropy GaN-based spin polarized light emitting diode and a preparation method thereof, and the core of the preparation method is as follows: firstly, converting 1-3 layers of graphene into a circular ring shape on n-GaN through dry transfer and laser direct writing; and secondly, in an ultrahigh vacuum environment, continuously and sequentially sputtering and depositing an MgO tunneling layer, a single-layer CoFeB ferromagnetic layer with vertical magnetic anisotropy and an ITO transparent conductive layer in the same sputtering cavity without breaking vacuum. According to the invention, an inverted structure is utilized to enhance heat dissipation and optimize a spin injection interface, and polarized light observation easy to observe is realized. Meanwhile, graphene is used for blocking the defect of MgO, conductance mismatch is solved, spin injection efficiency is enhanced, zero-field perpendicular magnetic anisotropy is achieved through single-layer CoFeB, ITO serves as a conducting layer and also serves as a light window, a full-vacuum magnetron sputtering process is combined to guarantee atomic-scale interface cleanness, and finally the device obtains high-spin-polarization polarized light at the room temperature under the zero external magnetic field; and meanwhile, the spin injection efficiency is high, the spin service life is long, the operation is stable under high current density, the process is simplified, the cost is low, and the observation is easy.

The application relates to a mouse heart magnetocardiography and magnetoencephalography testing device and method based on a zero-field atomic magnetometer, and relates to the field of heart magnetocardiography and magnetoencephalography testing. The application solves the problems that the existing mouse heart magnetocardiography and magnetoencephalography testing device has a large volume, and the magnetic field signal is distorted due to the movement or struggle of the mouse, and motion artifacts are generated. A plurality of groups of tool fixing hole positions (1-1) are formed in pairs on the upper end face of a platform (1), a plurality of heart magnetometer mounting holes (1-2) are formed in the middle of the length direction of the lower end face of the platform (1), a heart magnetometer is mounted in the heart magnetometer mounting hole (1-2), one insert (2) is inserted in each group of tool fixing hole positions (1-1), the insert (2) is provided with a magnetoencephalography mounting hole (2-1) and a head mounting hole (2-2). The mouse heart magnetic signal and the magnetoencephalography signal are tested at the same time, and the error introduced by the environmental magnetic field change in the experiment process is reduced to the maximum extent. The application is used for mouse heart magnetocardiography and magnetoencephalography testing.

The present invention relates to a method, device, and medium for calculating AC loss in a superconducting cable. The method comprises obtaining superconducting cable operating data and structural parameters; calculating the horizontal and vertical components of the external magnetic field of each layer of strip at a constant critical current density using the operating data and structural parameters based on the Kim extended magnetic field effect; calculating the critical current density of the corresponding layer of strip and updating the zero-field region width parameter of the corresponding layer; obtaining the current density distribution; updating the vertical component of the strip's external magnetic field; and calculating the AC loss of the superconducting cable based on the updated zero-field region width parameter and the vertical component of the strip's external magnetic field. The device and medium are used to implement the above method. Compared with the prior art, the present invention simplifies the calculation of AC loss into a single item, making the calculation more accurate.

The invention discloses a Fe2O3 buffer layer-based magnetic random access memory capable of realizing directional overturning of a magnetization layer without an external magnetic field and driven by a vertical magnetic layer current, and belongs to the field of spintronics. The structure of the device sequentially comprises an antiferromagnetic layer Fe2O3, a spin current generation layer Pt, a magnetic layer Co with vertical anisotropy and a protective layer TaOx for preventing a thin film from being oxidized from bottom to top. Due to the addition of the antiferromagnetic layer Fe2O3, magnetization overturning can be induced to be free of external field. According to the invention, the insulated Fe2O3 is used as the buffer layer to be inserted into the Pt / Co system, so that not only can zero field flip be realized, but also the problem of increase of critical flip current of the device caused by a shunting effect due to introduction of the functional layer can be avoided. The invention provides a structure and a preparation process of a current-driven magnetization turnover device based on an insulating antiferromagnetic layer.

The application discloses a method for precisely compensating three-dimensional residual magnetism of a single-beam SERF atomic magnetometer, which is based on the principle of high-frequency magnetic field modulation and comprises the following steps: after rough compensation of three-dimensional residual magnetism of a single-beam SERF magnetometer based on a quasi-static magnetic field, performing precise compensation of three-dimensional residual magnetism, wherein the precise compensation of three-dimensional residual magnetism comprises the following steps: applying a high-frequency modulation magnetic field, respectively scanning XYZ three-axis magnetic fields, and making the zero-crossing point of a dispersion curve corresponding to a demodulated first-order harmonic coincide with a zero-field point, so as to realize precise magnetic field compensation of a single-beam SERF magnetometer system. The method effectively improves the precision of magnetic compensation, solves the problems that a traditional magnetic compensation mode is not applicable to a single-beam SERF atomic magnetometer or the precision of magnetic field compensation in the direction of pumping light is too low, and is reasonable and simple to operate, thus playing a great promoting role in the development of atomic magnetometers.

A device for guiding TEM waves using dielectric nanowires is disclosed, relating to the fields of nanotechnology and microwave technology. The device structure includes a substrate, a zinc oxide seed layer, a ground signal electrode, a transmission signal electrode, and zinc oxide nanowires, forming a coplanar waveguide structure. The dielectric nanowires replace the signal lines in traditional coplanar waveguide structures. The TEM signal fed to one electrode is guided by the nanowires to the other signal electrode, ensuring that the electric field is along the normal direction of the nanowire surface and the magnetic field is along the tangential direction. Under the influence of the external electric field and the Lorentz force, the space charge region of the nanowire undergoes dynamic polarization, achieving internal zero field and surface electromagnetic shielding, thereby guiding the TEM wave. This coplanar waveguide structure design ensures good guidance performance at frequencies above 10 GHz.

The invention relates to a magnetic nanoparticle concentration omnibearing scanning method based on a zero field line, and the method comprises the following steps: S1, selecting a method for detecting the concentration of magnetic nanoparticles according to the magnetization characteristics of the magnetic nanoparticles; s2, determining to adopt a zero field line device to generate a zero field line so as to detect the concentration of the magnetic nanoparticles; s3, a zero field line device capable of generating a zero field line is built through a plurality of coil combinations; s4, an existing model is improved, and coil configuration is adjusted to achieve omni-directional detection; and S5, verifying whether the performance of the new model meets actual requirements or not. The method can solve the problem that errors exist when the zero field line is controlled to rotate in the prior art.

The application provides a method and system for improving the receiving bandwidth of a very low frequency atomic magnetometer, which polarizes alkali metal atoms in an atomic cell along the direction of a driving laser by using the driving laser; an external magnetic field at the cell is compensated by a three-axis magnetic coil and a three-axis magnetic sensor to provide a zero-field environment, and a main magnetic field B is applied to the coil in the direction of the driving light; the precession of the spin projection signal of the polarized atoms in the x direction is detected by using a detection laser in the x direction; an external very low frequency signal interacts with the atoms polarized in the z direction to make the atoms produce a precession signal in the xOy plane, so that the detection light is detected. After the detection light signal is collected, the control system feeds back a damping magnetic field to the atomic ensemble through the coil, and the bandwidth of the system is expanded by adjusting the feedback parameters while keeping the sensitivity unchanged. The technical scheme of the application solves the technical problem that high sensitivity and high bandwidth cannot be achieved simultaneously in the prior art.

The present invention relates to a method of detecting a zero-field resonance (ZFR), comprising the steps of i) directing a pump light beam in a first direction x through a vapor cell comprising gaseous atoms, ii) applying a magnetic field component to the vapor cell parallel or antiparallel to the first direction x with different magnitudes: formula (I), iii) detecting light of the pump light beam directed through the vapor cell for the different magnitudes: formula (I) of the magnetic field component applied parallel or antiparallel to the first direction x, iv) determining the maximum optical transmission Tmax and the minimum optical transmission Tmin based on the detected light, v) determining the difference between the maximum optical transmission and the minimum optical transmission D = Tmax - Tmin, vi) determining the magnitude of the x-component of an ambient magnetic field: formula (II) by determining the particular magnitude: formula (III) of the x-component of the applied magnetic field for which the minimum optical transmission Tmin is determined, vii) repeating at least steps i) to v) while applying magnetic field components to the vapor cell in second and third directions y and z perpendicular to the first direction x with different magnitudes: formula (IV) and formula (V) and viii) determining the magnitudes: formula (VI) and formula (VII) of the ambient magnetic field components in the second and third directions y and z by determining the particular magnitudes of the y- and z-components of the applied magnetic field: formula (VIII) and formula (IX) for which the difference between the maximum optical transmission and the minimum optical transmission D is minimized.

A magnetoresistive element has a tunnel barrier layer included between a ferromagnetic reference layer having a fixed reference magnetization and a ferromagnetic sense layer having a free sense magnetization. The sense magnetization has a ferromagnetic material composition and a stable vortex configuration in the absence of an applied magnetic field. The ferromagnetic material composition varies across the thickness of the sense layer from a composition with higher magnetization near the tunnel barrier layer to a composition with lower magnetization away from the tunnel barrier layer, such that the sense magnetization and ferromagnetic exchange strength of the sense layer are higher near the tunnel barrier layer than away from the tunnel barrier layer.

The application relates to the technical field of quantum materials, in particular to a van der Waals heterojunction type high-efficiency superconducting diode and a preparation method and application thereof. The superconducting diode comprises a substrate layer, an electrode layer, an Ising superconducting layer, a magnetic material layer and a packaging layer which are sequentially stacked from bottom to top; or, the superconducting diode comprises a substrate layer, a magnetic material layer, an Ising superconducting layer, an electrode layer and a packaging layer which are sequentially stacked from bottom to top. A heterojunction is formed by the Ising superconducting layer and the magnetic material layer to realize double symmetry cooperative breaking, and a system capable of realizing high-efficiency superconducting diode effect (SDE) is constructed by combining a vertical magnetic field training technology; wherein, the magnetic material layer breaks time reversal symmetry, and the Ising superconducting layer and the magnetic material layer form a heterojunction to break spatial inversion symmetry. The superconducting diode can maintain super-high SDE efficiency under zero field and has strong zero-field stability.

The invention discloses an NV color center diamond MEMS magnetic field detection device and method under a constant microwave frequency, and aims to solve the problems that an existing diamond MEMS magnetic sensor enables an NV color center electronic ground state energy level to resonate with a microwave frequency based on microwave frequency sweeping, and the microwave frequency sweeping is unstable. The magnetic field detection method comprises the steps that 1, a laser device is adopted to emit laser to irradiate the NV color center diamond cantilever beam MEMS magnetic sensor, when electrons fall back to a ground state from an excited state, the NV color center radiates red fluorescence, and the energy range determined by fluorescence spectrums of the excited light and the red fluorescence is the zero field splitting energy level; 2, determining the microwave energy to be Emw according to the constant microwave frequency, wherein the magnetic sensor is arranged in an external magnetic field environment; and 3, applying external stress to the diamond cantilever beam through a stress applying device, and when the electron energy level and the microwave frequency reach a resonance state, calculating to obtain the magnetic field energy. The external magnetic field is detected under the constant microwave frequency, and control over microwave conditions is simplified.

The application discloses a spin terahertz emitter with adjustable polarization without an external magnetic field and a manufacturing method thereof. A metal thin film layer heterostructure is deposited on a surface of a glass substrate. A ferromagnetic layer is a FeNi thin film layer, an anti-ferromagnetic layer is an IrMn3 thin film layer, and an interface between the FeNi thin film layer and the IrMn3 thin film layer is an exchange coupling interface subjected to directional magnetic field induction treatment. A surface of the metal thin film layer heterostructure is a periodic stripe array structure. The manufacturing method comprises the following steps: a magnetron sputtering process is used to sequentially deposit a ferromagnetic layer, an anti-ferromagnetic layer and a protective layer; the exchange coupling interface is formed through directional magnetic field induction treatment; and a micro-nano processing process is used for patterning treatment. Beneficial effects are as follows: under the condition of no external magnetic field, reliable spin current generation, spin-charge conversion and terahertz radiation can be realized. The stripe patterning structure realizes linear polarization, elliptical polarization and near-circular polarization output. The 'zero-field emission function' and the 'polarization control function' are integrated in the same thin film device system, and the system complexity is reduced.

The present invention belongs to the field of magnetic sensing technology, and specifically relates to a spin-valve type giant magnetoresistive linear sensor based on the interlayer DMI field. The present invention proposes a new structure of a spin-valve type giant magnetoresistive sensing unit. By introducing the interlayer DMI field into the spin-valve type giant magnetoresistive sensing unit during preparation, the magnetic moment of ferromagnetic layer 2 is along the short axis direction by the action of the interlayer DMI field on ferromagnetic layer 1; while the magnetic moment of ferromagnetic layer 3 is not affected by the action of this interlayer DMI field, and its magnetic moment still aligns along the long axis of the unit; thereby realizing that the magnetic moments of the free layer and the fixed layer of the spin-valve type giant magnetoresistive linear sensing unit are perpendicular to each other under zero field after plating, meeting the requirements of linear sensing. The present invention combines the DMI field in the field of spintronics with the giant magnetoresistive effect, which can be completed in one step during preparation, without any additional processes and external magnetic field bias settings, reducing the manufacturing cost and difficulty, and greatly ensuring the simplicity of preparation and the stability of the sensing unit.