17results about How to "Increase current" patented technology

The invention provides a control method of an oxygen adjusting module and a refrigerator with the oxygen adjusting module. The control method of the oxygen adjusting module comprises the following steps that the oxygen adjusting module is started; the real-time current of the oxygen adjusting module is collected; and based on the real-time current, adjusting the voltage of the oxygen adjusting module so that the real-time current is not greater than a preset range. The real-time current is collected and transmitted to the control device, and the control device adjusts the voltage of the oxygen adjusting module based on the real-time current, so that it is ensured that the oxygen adjusting module operates at the proper current, and the current of the oxygen adjusting module is prevented from being too high.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

Examples of the present application provide a charging method for a secondary battery, a charging apparatus for a secondary battery, a charging device, and a computer storage medium. The method includes: acquiring a first state of health SOH1 of the secondary battery when the secondary battery is at a preset charging node; activating the lithium-supplementing material when the SOH1 is less than or equal to a first threshold, to supplement lithium for the secondary battery; performing a first charging process on the secondary battery; determining a second state of health SOH2 of the secondary battery based on a working parameter of the secondary battery in the first charging process; and charging the secondary battery when the SOH2 is greater than a second threshold.

A synaptic transistor device with a wide spectral response is characterized by comprising: a floating gate layer for capturing light signals of different wavelengths to generate photogenerated carriers; a tunneling layer disposed on the floating gate layer for storing photogenerated carriers generated within the floating gate layer; an active layer disposed on the tunneling layer for transporting charge carriers and photogenerated carriers; source and drain electrodes, two source and drain electrodes symmetrically disposed on the active layer for providing a driving voltage to drive the flow of charge carriers and photogenerated carriers in the active layer, forming a circuit; a substrate disposed at the bottom of the synaptic transistor device for serving as the basis for fabricating the synaptic transistor device; a gate electrode disposed on the substrate for inducing charge carriers in the active layer; and an insulating layer disposed between the gate electrode and the floating gate layer for isolating the gate electrode and the active layer from conduction, wherein the floating gate layer is made of quantum dots with a wide spectral response, and a heterojunction structure is formed between the floating gate layer and the active layer.

This invention relates to a method for fabricating a perovskite / silicon tandem solar cell. The method involves stacking perovskite cells in series on top of silicon cells via an intermediate connecting structure. Based on the current of the perovskite cells or the current of the silicon cells without backscattered light, the current of either the silicon cells without backscattered light or the perovskite cells is adjusted so that the current of the perovskite cells is greater than the current of the silicon cells without backscattered light. The objective of this invention is to provide a perovskite / silicon tandem solar cell and its fabrication method. By adjusting the currents of the perovskite and silicon cells, the current of the perovskite cells is made higher than the current of the silicon cells, thereby utilizing the efficiency gain of bifacial power generation from the bottom cells to improve the conversion efficiency and actual power generation of the tandem solar cell.

This invention discloses an operational amplifier circuit for improving slew rate in the field of integrated circuit technology. It includes a basic op-amp unit, a positive-phase slew rate enhancement circuit, and a negative-phase slew rate enhancement circuit. The basic op-amp unit includes an input stage, a common-source common-gate stage, and a Class AB output stage. The output terminal of the input stage is connected to the first input terminal of the common-source common-gate stage, and the output terminal of the common-source common-gate stage is connected to the input terminal of the Class AB output stage. By introducing positive-phase and negative-phase slew rate enhancement circuits and their respective bias circuits, this invention can dynamically adjust the charging and discharging current of the frequency compensation capacitor according to the input voltage. This does not affect the normal operation of the circuit when the op-amp is operating stably. When a large signal step occurs at the input, the slew rate enhancement circuit is rapidly activated, increasing the current of the common-source common-gate stage, accelerating the charging and discharging process of the compensation capacitor, and improving the slew rate of the circuit.

The utility model provides a power module, which comprises the following steps: the power module comprises a lining plate and a power circuit arranged on the lining plate, the power circuit comprises a Vienna rectifier circuit and a three-phase full-bridge circuit, and the output end of the Vienna rectifier circuit is connected with the input end of the three-phase full-bridge circuit; wherein power devices in the Vienna rectification circuit and the three-phase full-bridge circuit are composed of a plurality of power chips with corresponding functions, and the power chips are silicon carbide power chips. The power factor of the power module can be improved by adopting the Vienna rectifying circuit, meanwhile, the output current of the power module is improved through the plurality of power chips, so that the output power is improved, a silicon carbide-based chip is further adopted to replace an existing silicon-based chip, the size of the chip can be reduced, and the cost is reduced. Therefore, under the condition that higher output power is set, the size of the power module is prevented from being increased.

The present application relates to the technical field of controllable nuclear fusion, and particularly relates to a device for controlling energy confinement time by using a limiter bias system. The device comprises a bias electrode head, a soft connection wire connected with the bias electrode head at one end and connected with a bias power supply system of an NCST spherical tokamak device at the other end, and a limiter main body installed on one side of the NCST spherical tokamak device and provided with the bias electrode head for restraining the escaped electrons generated by discharge of the NCST spherical tokamak device. The present application can restrain the escaped electrons generated by discharge of the NCST spherical tokamak device by installing the limiter bias system, improve the energy confinement time parameter of the NCST spherical tokamak device, significantly restrain the plasma instability, and thus increase the plasma current duration and improve the plasma current size.

The application belongs to the technical field of perovskite solar cells, and discloses a phosphonic acid group-containing small-molecule additive perovskite thin film and a preparation method thereof and a trans perovskite solar cell, which comprises the following steps: S1, dissolving metal halide and organic ammonium halide in an organic solvent to prepare a perovskite ABX3 precursor solution, wherein A is Cs + , methylamine ion or formamidinium ion, B is Pb 2+ , and X is halogen ion, including Cl ‑ , Br ‑ , and I ‑ ; S2, adding a phosphonic acid group-containing small-molecule additive to the perovskite precursor solution in S1 to prepare a precursor solution containing small-molecule doping; and S3, depositing the precursor solution containing small-molecule doping in S2 on a conductive substrate to obtain a perovskite thin film after annealing. The application uses a phosphonic acid group-containing small-molecule additive to realize the preparation of a trans perovskite solar cell device without a hole transport layer. The solar cell device has excellent photovoltaic performance, and the photoelectric conversion efficiency is more than 25%, and the device shows excellent long-term stability.

This invention proposes an ABX3 seed-induced crystallization perovskite thin film and a method for preparing the same for photovoltaic cells. The ABX3 seed-induced crystallization perovskite thin film contains potassium stannate. This ABX3 seed-induced crystallization perovskite thin film exhibits high crystallinity and good stability.

The application provides a display substrate and a display device, wherein the display substrate comprises a substrate, a photosensitive circuit and a display circuit arranged on the substrate, wherein the photosensitive circuit comprises a photodiode and a first driving transistor coupled with the photodiode; the display circuit comprises a display device, a second driving transistor and a switch transistor coupled with the display device respectively; the distance between the corresponding gate layer and the active layer of the first driving transistor and the second driving transistor is greater than the distance between the corresponding gate layer and the active layer of the switch transistor. The display quality is improved.

This invention provides a GGNMOS structure for electrostatic discharge (ESD) protection, comprising: a substrate, two sets of current discharge modules, and a ring-shaped heavily doped region. Each set of current discharge modules includes multiple discharge units; wherein each discharge unit includes: two source terminals, one drain terminal, two gate terminals, one floating heavily doped region, multiple lightly doped drain regions, and an isolation layer. In each discharge unit, this application forms a DN+ / Psub / P+ (Diode) by embedding a floating heavily doped region in the drain terminal. By adjusting the distance between the floating heavily doped region and the sub-drain terminal, the breakdown voltage of the Diode is made greater than VDD and less than the trigger voltage of the parasitic NPN. This allows the Diode to trigger before the parasitic NPN triggers, injecting a large number of electron-hole pairs into the substrate, increasing the substrate current, reducing the trigger voltage, and ensuring uniform device conduction, thereby improving the ESD protection performance of the GGNMOS.

The present application relates to the technical field of flexible direct current transmission, and particularly relates to a discharge method of a flexible direct current converter valve operation test system, when a stop command is issued, all power modules of the flexible direct current converter valve continue to operate discharge according to the stop command in a specific current modulation mode, until all the power modules are at the lowest set voltage, and then static discharge is performed until the voltage of all the power modules drops to a safe voltage, that is, the discharge is completed; wherein the specific current is a current less than 50% of the rated current. The stop and lock discharge strategy adopted in the present application does not require an additional discharge device, improves the discharge rate of the flexible direct current converter valve test, reduces the flexible direct current converter valve discharge waiting time, improves the production and test efficiency of the flexible direct current converter valve equipment, improves the design and type test verification speed, and improves the production routine test capacity.

The invention provides a battery cell module, a battery device and electric equipment. The battery cell module is used for the battery device and comprises a plurality of battery cell assemblies, each battery cell assembly comprises a plurality of battery cells arranged in the first direction, the two opposite ends of each battery cell in the second direction are each provided with a positive electrode and a negative electrode, and the positive electrodes and the negative electrodes, located at the same end, of the adjacent battery cells are electrically connected in sequence; the positive electrode of one of the two battery cells positioned at the end part of the first direction is a positive electrode lead-out electrode, and the negative electrode of the other battery cell is a negative electrode lead-out electrode; and the two adjacent battery cell assemblies are electrically connected through the positive electrode lead-out and the negative electrode lead-out, so that the problem that the charging time of the electric equipment is relatively long and the charging efficiency of the electric equipment is relatively low due to the fact that the battery cell module cannot realize large-current quick charging can be solved.

This invention discloses a fault detection method, device, and air conditioner for a three-phase power supply circuit of a frequency converter, relating to the field of air conditioning equipment technology. It addresses the technical problem of how to quickly determine the fault type of a three-phase power supply circuit using only the main circuit of the frequency converter. The fault detection method for the three-phase power supply circuit includes: increasing the load current or power of the three-phase power supply circuit when a fault occurs; quickly determining the fault type of the three-phase power supply circuit based on the ripple voltage frequency of the bus voltage; if the ripple voltage frequency is not within a first frequency range, then determining the fault type of the three-phase power supply circuit by switching the switching state of the switching devices. The fault detection method, device, and air conditioner for a three-phase power supply circuit disclosed in this invention can quickly determine the fault type of a three-phase power supply circuit using only the main circuit of the three-phase power supply circuit.

The application provides a P-SCH layer, a CW laser epitaxial structure and a preparation method thereof, and belongs to the field of semiconductors. The application provides a P-SCH layer, which is a multilayer structure, the number of layers of the multilayer structure is 2n, n is greater than or equal to 2, the emission wavelength increases from the first layer to the 2n layer; the difference between the emission wavelength of the n+1 layer and the emission wavelength of the n layer is 100-120 nm, and the difference between the emission wavelength of the remaining adjacent layers is 10-20 nm. The layer has a small span of two end emission wavelengths and a large span of middle emission wavelengths, a ladder structure, which greatly guarantees the electron leakage rate and the hole injection rate, thereby controlling the increase rate of the photon density with the increase of the current injection, and improving the device temperature stability.