143results about How to "Increase current" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a passivated specific light receiving surface and a preparation method and application thereof.The back contact cell comprises a substrate, the substrate is provided with a backlight surface and a light receiving surface, the light receiving surface of the substrate is sequentially provided with a first tunneling oxide layer, a doped amorphous silicon layer and a silicon medium anti-reflection layer, the thickness of the first tunneling oxide layer is 0.2-1.5 nm, and the thickness of the doped amorphous silicon layer is 0.2-1.5 nm; the doped amorphous silicon layer is doped with an oxygen element and a hydrogen element, the first tunneling oxide layer is doped with a hydrogen element, and the content of the hydrogen element close to the side of the doped amorphous silicon layer in the first tunneling oxide layer is greater than the content of the hydrogen element close to the side of the substrate. According to the invention, good passivation effect and optical loss can be taken into account, and the passivation effect is enhanced, so that the passivation effect and current of the battery are improved, the efficiency of the battery is improved, and the equipment cost is low.

The utility model relates to the technical field of solar cells, in particular to a solar cell, a photovoltaic module and a photovoltaic system. The potential risk that high-temperature slurry is sintered and diffused into a tunneling oxide layer is reduced while parasitic absorption of a doped polycrystalline silicon layer is reduced, and non-radiative recombination is reduced. A solar cell comprises a silicon substrate layer which comprises a first surface and a second surface which are oppositely arranged; the tunneling oxide layer is arranged on the first surface of the silicon substrate layer; the doped polycrystalline silicon layer is arranged on one side, far away from the silicon substrate layer, of the tunneling oxide layer; the doped polycrystalline silicon layer comprises a first sub-layer and a second sub-layer which are sequentially stacked in the direction gradually away from the silicon substrate layer; and a gate line electrode pattern; wherein the first sub-layer is further doped with a carbon element, and ohmic contact is formed between the grid line electrode pattern and the second sub-layer.

The utility model provides a back contact battery piece, a first pole region comprises a first bus grid line and a plurality of first grid line groups arranged at intervals along a first direction, and each first grid line group comprises a plurality of first fine grid lines arranged at intervals along a second direction and a first main grid line connected with the plurality of first fine grid lines; the second pole region comprises a plurality of second grid line groups which are arranged along the second bus grid line and along the first direction at intervals; each second grid line group comprises a plurality of second thin grid lines which are arranged along the second direction at intervals and a second main grid line which is connected with the second thin grid lines; the first main grid lines in at least two adjacent first grid line groups are connected through the first bus grid lines, and / or the second main grid lines in at least two adjacent second grid line groups are connected through the second bus grid lines. The current collection effect of a poor contact area can be improved, and the photoelectric conversion efficiency of the back contact battery piece is improved.

The invention discloses a river channel desilting device for water conservancy projects, and belongs to the technical field of water conservancy projects, the river channel desilting device comprises a collecting box used for storing sludge, a sludge pump is fixedly mounted at the top of the collecting box, and a feeding pipe and a discharging pipe are respectively communicated in a feeding port and a discharging port of the sludge pump; the extraction mechanism is used for extracting sludge, and the extraction mechanism comprises a mounting seat, an extraction pipe and a connecting pipe; the dewatering mechanism is used for dewatering sludge and comprises a collecting hopper and a dewatering cylinder, a conveying shaft is rotatably mounted in the dewatering cylinder, a spiral auger is fixedly mounted on the outer side of the conveying shaft, and the collecting hopper is slidably connected to the upper portion of the dewatering cylinder. Through the cooperation of the extraction mechanism and the dehydration mechanism, automatic extraction and dehydration of river silt can be achieved, the crushing mechanism is matched to achieve cutting and scattering of the silt, the scattering effect can be adjusted according to the flowing degree of the silt, the fluidity of the silt is improved, silt blockage is avoided, and the desilting efficiency is improved.

The invention provides a hybrid passivation back contact battery and a preparation method thereof. The battery comprises a silicon wafer; a third tunneling oxide layer, a first amorphous silicon layer and a first anti-reflection layer are sequentially arranged on the front surface of the silicon wafer; first polishing areas and second polishing areas are alternately arranged on the back surface of the silicon wafer; a first semiconductor layer is at least arranged on the first polishing area; a second semiconductor layer is at least arranged on the second polishing area; a texturing area is arranged between the first polishing area and the adjacent second polishing area; a fourth tunneling oxide layer, a second amorphous silicon layer and a second antireflection layer are sequentially arranged on each of the first polishing region, the texturing region and the second polishing region; the refractive index of the first amorphous silicon layer is 2.2-4, and the refractive index of the first amorphous silicon layer is gradually reduced in the direction from the third tunneling oxide layer to the first anti-reflection layer. According to the invention, the passivation effect is improved, so that the battery efficiency is improved. In addition, the passivation layers on the front surface and the back surface can be deposited and formed in the same tubular PECVD, so that the process steps are simplified, and the equipment cost is reduced.

The invention provides a BUCK converter and a variable gain error amplification circuit, and is applied to the technical field of power supply chips and BUCK converters. An error amplifier is improved into a variable gain error amplifier in the BUCK converter, and error amplification gain switching is carried out on whether load switching (such as overshoot / undershoot conditions) exists at an output end or not through a feedback detection circuit, for example, when it is detected that the output is in a load switching state; the error amplifying circuit rapidly enters an overshoot / undershoot mode, the transient current of the response branch is increased, the response speed is increased, the low transient voltage is achieved, the fast response characteristic is achieved, and the advantage of high efficiency can be continuously kept in the normal working process.

The invention discloses high-performance silver paste added with nano silver oxide and a preparation method of the high-performance silver paste. The high-performance silver paste comprises the following components: an organic carrier, glass powder, silver powder and an additive, the organic carrier comprises a volatile solvent and non-volatile resin; the non-volatile resin comprises ethyl cellulose, nitrocellulose, acrylic resin, polyamide wax resin and hydrogenated castor oil; the volatile solvent comprises texanol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, tributyl citrate, dimethyl oxalate and dimethyl silicone oil; the additive adopts nano silver oxide. The invention relates to the technical field of solar cells. Compared with silver powder, the nano silver oxide is smaller in particle size, large in specific surface area and low in tap density, the viscosity can be improved when the nano silver oxide is added into the paste, the height-width ratio of a printing grid line electrode can be improved, the shading area can be reduced, the current of a battery piece can be improved, and the photoelectric conversion efficiency of the battery piece can be improved.

The invention relates to a preparation method of a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductor manufacturing, and the method comprises the steps: providing a substrate which comprises a gate structure and first doped regions located in the substrate at two opposite sides of the gate structure along a first direction; forming a protection side wall covering a part of the first doped region on the outer side wall of the gate structure; performing thermal oxidation treatment on the first doped region to form a sacrificial oxide layer; cleaning and removing the sacrificial oxide layer to obtain an initial groove exposing the bottom surface of the protection side wall; etching the substrate exposed by the initial groove by adjusting etching parameters of etching ions to obtain a reference groove with an opening right below the gate side wall; adjusting the crystal orientation at the opening corner of the reference groove by using the fourth main group element ions; a part of the substrate is selectively etched and removed through a reference groove wet method, after a sigma groove is obtained, a stress layer with the top face not lower than the top face of the substrate is formed in the sigma groove, and at least the horizontal distance between the stress layer and a channel region can be accurately controlled.

The utility model discloses a charger and a charging system in the technical field of medical instruments, the charger is used for charging an implantable device, the implantable device is used for being implanted into the skull of a user, the implantable device comprises a receiving coil, the charger comprises a transmitting coil, the transmitting coil is used for being coupled with the receiving coil, and the receiving coil is used for receiving the transmitting coil. At least part of the transmitting coil is in an arc shape, and the arc shape is at least matched with the skull of the user. By adopting the transmitting coil adaptive to the radian of the human skull, the radian of the human skull and the shape of the nerve stimulator can be better matched, so that the distances from the surface of the receiving coil to the surface of the transmitting coil are equal everywhere in the receiving area, and the magnetic flux variation in the receiving area is improved; the coupling coefficient between the transmitting coil and the receiving coil is improved, and the induction voltage and current of the receiving coil are improved, so that the charging efficiency is improved.

According to the negative electrode plate provided by the invention, the pure silicon particles are used as the negative electrode active material, and the thickness of the coating layer of the negative electrode plate is controlled by controlling the mass ratio of the pure silicon particles in the negative electrode silicon-based active material and adjusting the surface density and the compaction density of the negative electrode plate, so that the energy density and the conductivity of the negative electrode plate are improved. The invention also provides a preparation method of the negative pole piece, and the preparation of the negative pole piece is realized by preferably selecting the conductive agent and the binder and controlling the viscosity and the solid content of the slurry. The invention also provides a cylindrical battery, by adopting the negative pole piece, the preparation of various types of high-energy density cylindrical batteries can be realized by changing the width and length of the positive and negative pole pieces, and meanwhile, the battery also has excellent rate capability.

The invention discloses a pulse electrochemical crystallization coupled composite constructed wetland system which comprises an energy system, a pulse electrochemical crystallization pond and a composite constructed wetland system, and the energy system supplies energy to the pulse electrochemical crystallization pond and the composite constructed wetland system. Aquaculture wastewater firstly enters a pulse electrochemical crystallization pond, struvite (MAP) sediment is formed through electrochemical crystallization, ammonia nitrogen and phosphate in the wastewater are efficiently removed, and partial removal of organic matter is achieved. Then the wastewater enters a composite artificial wetland system, and the wastewater is deeply purified under the action of filler filtration / adsorption, microbial assimilation / conversion and plant absorption. The pulse electrochemical crystallization coupled composite constructed wetland system is compact in structure, and the defects of high energy consumption of direct-current electrochemical crystallization and low purification efficiency of a traditional constructed wetland are overcome through physical-chemical-biological multi-path coupling enhanced culture wastewater treatment.

The invention discloses a preparation method and application of composite nano-silver paper with a low thermal expansion coefficient, and the preparation method comprises the following steps: S1, diluting a dispersion solution obtained after surface modification of a nanoscale ceramic material to obtain a diluent; s2, uniformly mixing a diluent and the silver nanowire mother liquor to obtain a mixed liquor, wherein the solid content ratio of the nanoscale ceramic material in the diluent to the silver nanowire in the silver nanowire mother liquor is (0.3-5): 100; and S3, carrying out solid-liquid separation, drying and pre-pressing on the mixed solution to obtain the composite nano-silver paper. By adding the nanoscale ceramic material, the thermal expansion coefficient of the silver layer after hot pressing sintering can be effectively reduced, and therefore the cold and hot impact performance is improved.

The invention discloses a heterojunction bipolar transistor, and belongs to the technical field of semiconductors. The heterojunction bipolar transistor comprises a collector electrode; the base electrode is positioned on one side of the collector electrode; the emitting electrode is positioned on one side, deviating from the collecting electrode, of the base electrode; wherein the base electrode comprises a superlattice structure, the band gap of the base electrode is smaller than the band gap of the emitter electrode, the conduction band offset between the base electrode and the emitter electrode is smaller than the target conduction band offset, and the valence band offset between the base electrode and the emitter electrode is larger than the first target valence band offset. The valence band offset between the base and the collector is greater than a second target valence band offset. The electron injection efficiency of the emitter can be improved, the overall power consumption of the device is reduced, injection of holes from the base to the collector is effectively prevented, and the performance of the device is improved.

The invention provides a control method of an oxygen adjusting module and a refrigerator with the oxygen adjusting module. The control method of the oxygen adjusting module comprises the following steps that the oxygen adjusting module is started; the real-time current of the oxygen adjusting module is collected; and based on the real-time current, adjusting the voltage of the oxygen adjusting module so that the real-time current is not greater than a preset range. The real-time current is collected and transmitted to the control device, and the control device adjusts the voltage of the oxygen adjusting module based on the real-time current, so that it is ensured that the oxygen adjusting module operates at the proper current, and the current of the oxygen adjusting module is prevented from being too high.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

Examples of the present application provide a charging method for a secondary battery, a charging apparatus for a secondary battery, a charging device, and a computer storage medium. The method includes: acquiring a first state of health SOH1 of the secondary battery when the secondary battery is at a preset charging node; activating the lithium-supplementing material when the SOH1 is less than or equal to a first threshold, to supplement lithium for the secondary battery; performing a first charging process on the secondary battery; determining a second state of health SOH2 of the secondary battery based on a working parameter of the secondary battery in the first charging process; and charging the secondary battery when the SOH2 is greater than a second threshold.

The present application provides a perovskite solar battery and a photovoltaic assembly. The perovskite solar battery includes a first electrode, a second electrode, and a light absorbing layer between the first electrode and the second electrode. The perovskite solar battery further includes a first hole transport layer and a second hole transport layer, the first hole transport layer being located between the second hole transport layer and the light absorbing layer, where the second hole transport layer is located between the first electrode and the light absorbing layer, or the second hole transport layer is located between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is selected from one of PTAA, and nickel oxide that is doped with a first doping element or is undoped, and a second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material and a P-type transition metal halide semiconductor material capable of isolating water and oxygen.

Embodiments of the present application disclose a UPS device protection method. The protection method comprises: acquiring a first bus voltage applied to a main inverter circuit; in response to the first bus voltage being less than or equal to a first voltage threshold, reducing an output current of the main inverter circuit; acquiring a second bus voltage applied to the main inverter circuit after current-limiting operation of the main inverter circuit; and in response to the second bus voltage being greater than or equal to a second voltage threshold, controlling the output current of the main inverter circuit to return to a normal current, the second voltage threshold being greater than the first voltage threshold. In the case of rapid drop of the first bus voltage of the UPS device, the embodiments of the present application can quickly limit the output current of the main inverter circuit to gradually increase the bus voltage applied to the main inverter circuit, reduce the voltage difference between the bus voltage and the battery voltage of the battery, avoid damage to the switching tube of the direct current conversion circuit, the power factor correction circuit or the main inverter circuit due to the large current, and further improve the working reliability and safety of the UPS device.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

The present application discloses a high-precision current source and electronic device, which are applied to the field of high-precision circuit design. Among them, the inverting input terminal of the first operational amplifier is connected to the bias voltage terminal, the non-inverting input terminal of the first operational amplifier is connected to the first end of the zero temperature coefficient resistor circuit, and the output terminal of the first operational amplifier is connected to the first end of the first transistor; the second end of the first transistor is connected to the chip power supply, and the third end of the first transistor is connected to the second end of the zero temperature coefficient resistor circuit; the third end of the zero temperature coefficient resistor circuit is connected to the signal control terminal, the fourth end of the zero temperature coefficient resistor circuit is connected to the first end of the current generating circuit, and the second end of the current generating circuit is connected to the corresponding external circuit. The present application reduces the influence of the chip manufacturing process and the operating voltage on the accuracy of the current source by fine-tuning the bias voltage, and reduces the problem of output current drift caused by temperature changes, avoiding external high-precision resistors.

The invention relates to a slip ring body (2) for an electrically excited rotor of a rotating electromechanical generator (1) which can rotate about an axis (10), the slip ring body having at least one circumferential sliding contact surface (12) which is electrically conductively connected to at least one electrical interface (11) which protrudes axially from the end side of the slip ring body (2), wherein the end side of the slip ring body (2) is provided with an electrically insulating support element (4) which substantially corresponds to the cross section of the slip ring body (2), the support element axially surrounding the interface (11) and supporting it radially.

A synaptic transistor device with a wide spectral response is characterized by comprising: a floating gate layer for capturing light signals of different wavelengths to generate photogenerated carriers; a tunneling layer disposed on the floating gate layer for storing photogenerated carriers generated within the floating gate layer; an active layer disposed on the tunneling layer for transporting charge carriers and photogenerated carriers; source and drain electrodes, two source and drain electrodes symmetrically disposed on the active layer for providing a driving voltage to drive the flow of charge carriers and photogenerated carriers in the active layer, forming a circuit; a substrate disposed at the bottom of the synaptic transistor device for serving as the basis for fabricating the synaptic transistor device; a gate electrode disposed on the substrate for inducing charge carriers in the active layer; and an insulating layer disposed between the gate electrode and the floating gate layer for isolating the gate electrode and the active layer from conduction, wherein the floating gate layer is made of quantum dots with a wide spectral response, and a heterojunction structure is formed between the floating gate layer and the active layer.

The utility model discloses a body shape detection circuit of a massage chair movement-free shoulder line, which comprises a VCC end, a first field-effect tube, a motor, a second field-effect tube, a current sampling resistor, a first grounding end, a second grounding end, a filter capacitor, a digital-to-analog converter, a filter resistor, a third field-effect tube and a fourth field-effect tube, the VCC end is electrically connected with the D electrode of the first field effect transistor and the D electrode of the fourth field effect transistor, the S electrode of the first field effect transistor and the S electrode of the fourth field effect transistor are electrically connected with the positive electrode and the negative electrode of the motor respectively, and the S electrode of the first field effect transistor is electrically connected with the D electrode of the second field effect transistor. According to the utility model, when the circuit moves to the shoulder on the track on the motor, the load in the circuit is increased, the current rises, the current is filtered by the filter capacitor and the filter resistor, the position is identified as a shoulder line, and compared with the traditional optocoupler detection, the detection accuracy is greatly improved by using the current change for detection.

A peripheral nerve stimulation system, comprising an percutaneous implanted lead (10), an adapter (20), a first cable (30), a stimulator (50) and a surface electrode, wherein the percutaneous implanted lead (10) can be inserted into the body of a patient through skin, and the percutaneous implanted lead (10) comprises a distal lead head (11) and a lead body (12) from a distal end to a proximal end, the distal lead head (11) comprising at least one electrode, the lead body (12) being formed by spirally winding at least one conductor wire (121), and the conductor wire (121) comprising a metal wire (122) and an insulating layer (123), which is arranged outside the metal wire (122) in a wrapping manner, such that the lead body (12) is of an open insulating spiral structure; the adapter (20) is electrically connected to the proximal end of the percutaneous implanted lead (10), the adapter (20) is electrically connected to the stimulator (50) by means of the first cable (30), and the stimulator (50) is used for sending an electrical stimulation pulse; and the surface electrode can be directly connected to the stimulator (50) or connected to the stimulator (50) by means of a second cable (72), and forms a stimulation loop together with the percutaneous implanted lead (10). By means of the peripheral nerve stimulation system, pain can be effectively suppressed, thereby improving the clinical treatment effect.

The invention relates to a temperature response material for an adapter sheet, a preparation method of the temperature response material, the adapter sheet containing the temperature response material and a lithium ion battery. The temperature response material for the adapter sheet comprises a negative temperature coefficient material and a conductive agent, the switching piece comprises a base material and a functional layer arranged on at least one surface of the base material, and the functional layer is made of a temperature response material for the switching piece. According to the temperature response material for the adapter sheet, two materials are compounded, so that in practical application, the internal resistance of a traditional adapter sheet can be reduced, the energy efficiency of a battery can be ensured, the thermosensitive response speed can be increased, the safety can be improved, and the development of a lithium ion battery is promoted.

The invention discloses a data line, which belongs to the technical field of data lines, comprises a line body and connecting plugs at the two ends of the line body, the two ends of the line body are electrically connected with the connecting plugs, and is characterized in that a first body and a second body switch the charging state, the data transmission state and the charging data transmission state of the data line through a switching mechanism; the data line has the beneficial effects that the switching mechanism is creatively arranged, switching of the charging state, the data transmission state and the charging data transmission state of the data line is achieved, the core wire connection mode in the line body can be changed, three modes of only charging, only data transmission and simultaneous charging data transmission can be achieved, only charging is achieved, and only data transmission is achieved. And only the core wires are connected in parallel in pairs during data transmission, so that the resistance of the core wires is reduced, the current is increased under the condition that the input voltage is not changed, the charging efficiency and the data transmission efficiency are improved, and the use requirements are well met.

This invention relates to a method for fabricating a perovskite / silicon tandem solar cell. The method involves stacking perovskite cells in series on top of silicon cells via an intermediate connecting structure. Based on the current of the perovskite cells or the current of the silicon cells without backscattered light, the current of either the silicon cells without backscattered light or the perovskite cells is adjusted so that the current of the perovskite cells is greater than the current of the silicon cells without backscattered light. The objective of this invention is to provide a perovskite / silicon tandem solar cell and its fabrication method. By adjusting the currents of the perovskite and silicon cells, the current of the perovskite cells is made higher than the current of the silicon cells, thereby utilizing the efficiency gain of bifacial power generation from the bottom cells to improve the conversion efficiency and actual power generation of the tandem solar cell.

The invention belongs to the technical field of electromagnetic driving, and particularly relates to a positive and negative series magnetic double-magnetic-loop electromagnetic driving device which comprises a first magnetic conductive component, a permanent magnet, a wire harness and a second magnetic conductive component. The permanent magnet is arranged between the two magnetic poles; the second magnetic conductive component is arranged on the upper side of the permanent magnet and forms a closed magnetic path with the first magnetic conductive component; magnetic flux in the closed magnetic path forms supersaturation through the permanent magnet; a plurality of supersaturated magnetic circuit units formed by the first magnetic conductive components and the permanent magnets are arranged side by side along the positive direction of the X axis; the same-direction ends of two adjacent permanent magnets have opposite magnetic poles; the positive and negative series magnetic double-magnetic loop can alternately work to drive the second magnetic conductive component to move, and the permanent magnet enables the magnetic flux of the closed magnetic path to form supersaturation, so that the effective saturation current of the driving wire harness can be greatly increased; a reluctance motor designed and manufactured by using the positive and negative series magnetic double-magnetic-loop electromagnetic driving device has the advantages of good high-rotating-speed performance and large low-speed torque.

The invention provides a high electron mobility transistor and a preparation method thereof, and relates to the technical field of transistor design. Comprising a substrate, a nucleating layer, a buffer layer and an electrode layer which are stacked in sequence, at least one set of multi-channel structure is arranged between the buffer layer and the electrode layer, the multi-channel structure comprises a plurality of heterojunction structure layers and a cap layer, all the heterojunction structure layers are stacked, and the cap layer is located on the upper surface of the uppermost heterojunction structure layer; each heterojunction structure layer comprises a GaN channel layer and an AlScN barrier layer which are arranged in a stacked mode, the GaN channel layers and the AlScN barrier layers of every two adjacent heterojunction structure layers are alternately stacked, and the GaN channel layers and the AlScN barrier layers are connected to form a heterojunction and form an interface with a two-dimensional electron gas channel. According to the high-electron-mobility transistor, the performance of the transistor is improved by changing the material forming the heterojunction and designing a multi-communication structure, so that the requirements of high frequency and high power are better met.

This invention discloses an operational amplifier circuit for improving slew rate in the field of integrated circuit technology. It includes a basic op-amp unit, a positive-phase slew rate enhancement circuit, and a negative-phase slew rate enhancement circuit. The basic op-amp unit includes an input stage, a common-source common-gate stage, and a Class AB output stage. The output terminal of the input stage is connected to the first input terminal of the common-source common-gate stage, and the output terminal of the common-source common-gate stage is connected to the input terminal of the Class AB output stage. By introducing positive-phase and negative-phase slew rate enhancement circuits and their respective bias circuits, this invention can dynamically adjust the charging and discharging current of the frequency compensation capacitor according to the input voltage. This does not affect the normal operation of the circuit when the op-amp is operating stably. When a large signal step occurs at the input, the slew rate enhancement circuit is rapidly activated, increasing the current of the common-source common-gate stage, accelerating the charging and discharging process of the compensation capacitor, and improving the slew rate of the circuit.