54results about How to "Increase current" patented technology

The invention discloses a river channel desilting device for water conservancy projects, and belongs to the technical field of water conservancy projects, the river channel desilting device comprises a collecting box used for storing sludge, a sludge pump is fixedly mounted at the top of the collecting box, and a feeding pipe and a discharging pipe are respectively communicated in a feeding port and a discharging port of the sludge pump; the extraction mechanism is used for extracting sludge, and the extraction mechanism comprises a mounting seat, an extraction pipe and a connecting pipe; the dewatering mechanism is used for dewatering sludge and comprises a collecting hopper and a dewatering cylinder, a conveying shaft is rotatably mounted in the dewatering cylinder, a spiral auger is fixedly mounted on the outer side of the conveying shaft, and the collecting hopper is slidably connected to the upper portion of the dewatering cylinder. Through the cooperation of the extraction mechanism and the dehydration mechanism, automatic extraction and dehydration of river silt can be achieved, the crushing mechanism is matched to achieve cutting and scattering of the silt, the scattering effect can be adjusted according to the flowing degree of the silt, the fluidity of the silt is improved, silt blockage is avoided, and the desilting efficiency is improved.

The invention provides a hybrid passivation back contact battery and a preparation method thereof. The battery comprises a silicon wafer; a third tunneling oxide layer, a first amorphous silicon layer and a first anti-reflection layer are sequentially arranged on the front surface of the silicon wafer; first polishing areas and second polishing areas are alternately arranged on the back surface of the silicon wafer; a first semiconductor layer is at least arranged on the first polishing area; a second semiconductor layer is at least arranged on the second polishing area; a texturing area is arranged between the first polishing area and the adjacent second polishing area; a fourth tunneling oxide layer, a second amorphous silicon layer and a second antireflection layer are sequentially arranged on each of the first polishing region, the texturing region and the second polishing region; the refractive index of the first amorphous silicon layer is 2.2-4, and the refractive index of the first amorphous silicon layer is gradually reduced in the direction from the third tunneling oxide layer to the first anti-reflection layer. According to the invention, the passivation effect is improved, so that the battery efficiency is improved. In addition, the passivation layers on the front surface and the back surface can be deposited and formed in the same tubular PECVD, so that the process steps are simplified, and the equipment cost is reduced.

The utility model discloses a charger and a charging system in the technical field of medical instruments, the charger is used for charging an implantable device, the implantable device is used for being implanted into the skull of a user, the implantable device comprises a receiving coil, the charger comprises a transmitting coil, the transmitting coil is used for being coupled with the receiving coil, and the receiving coil is used for receiving the transmitting coil. At least part of the transmitting coil is in an arc shape, and the arc shape is at least matched with the skull of the user. By adopting the transmitting coil adaptive to the radian of the human skull, the radian of the human skull and the shape of the nerve stimulator can be better matched, so that the distances from the surface of the receiving coil to the surface of the transmitting coil are equal everywhere in the receiving area, and the magnetic flux variation in the receiving area is improved; the coupling coefficient between the transmitting coil and the receiving coil is improved, and the induction voltage and current of the receiving coil are improved, so that the charging efficiency is improved.

The invention provides a control method of an oxygen adjusting module and a refrigerator with the oxygen adjusting module. The control method of the oxygen adjusting module comprises the following steps that the oxygen adjusting module is started; the real-time current of the oxygen adjusting module is collected; and based on the real-time current, adjusting the voltage of the oxygen adjusting module so that the real-time current is not greater than a preset range. The real-time current is collected and transmitted to the control device, and the control device adjusts the voltage of the oxygen adjusting module based on the real-time current, so that it is ensured that the oxygen adjusting module operates at the proper current, and the current of the oxygen adjusting module is prevented from being too high.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

Examples of the present application provide a charging method for a secondary battery, a charging apparatus for a secondary battery, a charging device, and a computer storage medium. The method includes: acquiring a first state of health SOH1 of the secondary battery when the secondary battery is at a preset charging node; activating the lithium-supplementing material when the SOH1 is less than or equal to a first threshold, to supplement lithium for the secondary battery; performing a first charging process on the secondary battery; determining a second state of health SOH2 of the secondary battery based on a working parameter of the secondary battery in the first charging process; and charging the secondary battery when the SOH2 is greater than a second threshold.

The present application provides a perovskite solar battery and a photovoltaic assembly. The perovskite solar battery includes a first electrode, a second electrode, and a light absorbing layer between the first electrode and the second electrode. The perovskite solar battery further includes a first hole transport layer and a second hole transport layer, the first hole transport layer being located between the second hole transport layer and the light absorbing layer, where the second hole transport layer is located between the first electrode and the light absorbing layer, or the second hole transport layer is located between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is selected from one of PTAA, and nickel oxide that is doped with a first doping element or is undoped, and a second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material and a P-type transition metal halide semiconductor material capable of isolating water and oxygen.

Embodiments of the present application disclose a UPS device protection method. The protection method comprises: acquiring a first bus voltage applied to a main inverter circuit; in response to the first bus voltage being less than or equal to a first voltage threshold, reducing an output current of the main inverter circuit; acquiring a second bus voltage applied to the main inverter circuit after current-limiting operation of the main inverter circuit; and in response to the second bus voltage being greater than or equal to a second voltage threshold, controlling the output current of the main inverter circuit to return to a normal current, the second voltage threshold being greater than the first voltage threshold. In the case of rapid drop of the first bus voltage of the UPS device, the embodiments of the present application can quickly limit the output current of the main inverter circuit to gradually increase the bus voltage applied to the main inverter circuit, reduce the voltage difference between the bus voltage and the battery voltage of the battery, avoid damage to the switching tube of the direct current conversion circuit, the power factor correction circuit or the main inverter circuit due to the large current, and further improve the working reliability and safety of the UPS device.

A synaptic transistor device with a wide spectral response is characterized by comprising: a floating gate layer for capturing light signals of different wavelengths to generate photogenerated carriers; a tunneling layer disposed on the floating gate layer for storing photogenerated carriers generated within the floating gate layer; an active layer disposed on the tunneling layer for transporting charge carriers and photogenerated carriers; source and drain electrodes, two source and drain electrodes symmetrically disposed on the active layer for providing a driving voltage to drive the flow of charge carriers and photogenerated carriers in the active layer, forming a circuit; a substrate disposed at the bottom of the synaptic transistor device for serving as the basis for fabricating the synaptic transistor device; a gate electrode disposed on the substrate for inducing charge carriers in the active layer; and an insulating layer disposed between the gate electrode and the floating gate layer for isolating the gate electrode and the active layer from conduction, wherein the floating gate layer is made of quantum dots with a wide spectral response, and a heterojunction structure is formed between the floating gate layer and the active layer.

A peripheral nerve stimulation system, comprising an percutaneous implanted lead (10), an adapter (20), a first cable (30), a stimulator (50) and a surface electrode, wherein the percutaneous implanted lead (10) can be inserted into the body of a patient through skin, and the percutaneous implanted lead (10) comprises a distal lead head (11) and a lead body (12) from a distal end to a proximal end, the distal lead head (11) comprising at least one electrode, the lead body (12) being formed by spirally winding at least one conductor wire (121), and the conductor wire (121) comprising a metal wire (122) and an insulating layer (123), which is arranged outside the metal wire (122) in a wrapping manner, such that the lead body (12) is of an open insulating spiral structure; the adapter (20) is electrically connected to the proximal end of the percutaneous implanted lead (10), the adapter (20) is electrically connected to the stimulator (50) by means of the first cable (30), and the stimulator (50) is used for sending an electrical stimulation pulse; and the surface electrode can be directly connected to the stimulator (50) or connected to the stimulator (50) by means of a second cable (72), and forms a stimulation loop together with the percutaneous implanted lead (10). By means of the peripheral nerve stimulation system, pain can be effectively suppressed, thereby improving the clinical treatment effect.

This invention relates to a method for fabricating a perovskite / silicon tandem solar cell. The method involves stacking perovskite cells in series on top of silicon cells via an intermediate connecting structure. Based on the current of the perovskite cells or the current of the silicon cells without backscattered light, the current of either the silicon cells without backscattered light or the perovskite cells is adjusted so that the current of the perovskite cells is greater than the current of the silicon cells without backscattered light. The objective of this invention is to provide a perovskite / silicon tandem solar cell and its fabrication method. By adjusting the currents of the perovskite and silicon cells, the current of the perovskite cells is made higher than the current of the silicon cells, thereby utilizing the efficiency gain of bifacial power generation from the bottom cells to improve the conversion efficiency and actual power generation of the tandem solar cell.

The invention provides a high electron mobility transistor and a preparation method thereof, and relates to the technical field of transistor design. Comprising a substrate, a nucleating layer, a buffer layer and an electrode layer which are stacked in sequence, at least one set of multi-channel structure is arranged between the buffer layer and the electrode layer, the multi-channel structure comprises a plurality of heterojunction structure layers and a cap layer, all the heterojunction structure layers are stacked, and the cap layer is located on the upper surface of the uppermost heterojunction structure layer; each heterojunction structure layer comprises a GaN channel layer and an AlScN barrier layer which are arranged in a stacked mode, the GaN channel layers and the AlScN barrier layers of every two adjacent heterojunction structure layers are alternately stacked, and the GaN channel layers and the AlScN barrier layers are connected to form a heterojunction and form an interface with a two-dimensional electron gas channel. According to the high-electron-mobility transistor, the performance of the transistor is improved by changing the material forming the heterojunction and designing a multi-communication structure, so that the requirements of high frequency and high power are better met.

This invention discloses an operational amplifier circuit for improving slew rate in the field of integrated circuit technology. It includes a basic op-amp unit, a positive-phase slew rate enhancement circuit, and a negative-phase slew rate enhancement circuit. The basic op-amp unit includes an input stage, a common-source common-gate stage, and a Class AB output stage. The output terminal of the input stage is connected to the first input terminal of the common-source common-gate stage, and the output terminal of the common-source common-gate stage is connected to the input terminal of the Class AB output stage. By introducing positive-phase and negative-phase slew rate enhancement circuits and their respective bias circuits, this invention can dynamically adjust the charging and discharging current of the frequency compensation capacitor according to the input voltage. This does not affect the normal operation of the circuit when the op-amp is operating stably. When a large signal step occurs at the input, the slew rate enhancement circuit is rapidly activated, increasing the current of the common-source common-gate stage, accelerating the charging and discharging process of the compensation capacitor, and improving the slew rate of the circuit.

The present invention provides a non-aqueous electrolyte solution containing an chain sulfone compound (I) represented by Formula (I) and a cyclic sulfone compound (II) represented by Formula (II). The content of the chain sulfone compound (I) is from 0.01% by mass to 10% by mass with respect to the total amount of the non-aqueous electrolyte solution. In Formula (I), each of R11 and R12 independently represents an alkyl group having from 1 to 6 carbon atoms, or a fluorinated alkyl group having from 1 to 6 carbon atoms. In Formula (II), R21 represents an alkylene group having from 3 to 6 carbon atoms, an alkenylene group having from 2 to 6 carbon atoms, or a group represented by Formula (ii-1); and * represents a binding site; in which in Formula (ii-1), R22 represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, or a group represented by Formula (ii-2); and R23 represents an alkyl group having from 1 to 2 carbon atoms, or a group represented by Formula (ii-2).

According to the square battery provided by the utility model, the first battery cell and the second battery cell are respectively provided with the two first tabs and the two second tabs, and the two first tabs and the two second tabs are mutually staggered; the first distance between the two first tabs and the second distance between the two second tabs are designed to be the same or different, so that after the first battery cell and the second battery cell are stacked, the first tabs and the second tabs can be staggered from each other and are respectively positioned at different positions of the corresponding pole columns; and the stacking thickness of the tabs at a single position after the battery cells are stacked is reduced, so that the welding difficulty of the tabs is reduced, and the energy density is effectively improved.

This application provides a power module, a power supply system, a vehicle, and a photovoltaic system. The power module includes a first metal layer-coated substrate, a plurality of chips, and a first connection piece. A first electrode of each chip is electrically connected to a first metal layer of the first metal layer-coated substrate. The first connection piece includes a first main body part and a plurality of first contact parts. A second electrode of each of the plurality of chips is in contact with at least one of the first contact parts. There is a part of the first main body part between at least one pair of adjacent first contact parts. In this application, a current flowing out from the chip may directly flow to the first main body part through the first contact part. In this way, a current flow path is shortened. The chips are connected in parallel by using the first connection piece, so that parasitic inductance of the power module can be reduced, and current equalization of the power module can be improved.

The invention relates to the technical field of nursing instruments in the rehabilitation medicine department, and discloses a body position auxiliary placing pad for spinal cord injury rehabilitation medicine nursing, lower connecting clamping blocks are fixedly connected to the two sides of the lower surface of a bearing pad, a bearing air bag is embedded in the bearing pad, and a headrest is slidably connected to the front end of the upper surface of the bearing pad; a back cushion is slidably connected to the middle of the upper surface of the bearing cushion, and side limiting cushions are slidably connected to the positions, located on the two sides of the back cushion, of the upper surface of the bearing cushion. When the headrest and the back cushion are pressed downwards, the middle position of the pressed bearing air bag is sunken downwards, air moves towards the two sides of the bearing air bag, then side limiting cushions on the two sides are pushed upwards to ascend, the two sides of a patient are limited, meanwhile, a lower triggering plate moves downwards, a driven groove is driven through an inclined pressing plate, and then a driven transverse plate is driven to move towards the inner side; and then the side neck pillows on the two sides are driven to move synchronously, and the neck of the patient is protected.

The invention provides a composite electron transport layer, a preparation method thereof, a perovskite solar cell and application. The composite electron transport layer comprises a C60 layer, a SnO2 layer and an IWO layer which are stacked; the thickness of the SnO2 layer is larger than or equal to 60 nm, and the thickness of the IWO layer is smaller than or equal to 5 nm. The introduction of the thin IWO layer can improve the transmission rate of the electron transmission layer and improve the interface defect between SnO2 and the electrode, so that the battery has higher open voltage and stability. Moreover, the thick SnO2 layer can increase an electron transmission channel, so that photo-generated electrons can be transmitted to the electrode more quickly and efficiently, and the thin IWO layer can improve the light transmittance, increase the generation of photo-generated current, cooperate with the SnO2 layer, adjust the energy level matching between the perovskite layer and the electrode, promote charge transmission and reduce charge recombination. The perovskite solar cell prepared on the basis of the method shows excellent photoelectric conversion efficiency.

The utility model relates to the technical field of lamp power supplies, aims to solve the technical problem that the existing LED lamp is poor in time delay effect, and discloses an LED gradually-bright and gradually-dark control circuit which comprises an LED assembly, a switch SW, a PNP type triode Q5 and a constant-current driver U11, a collector electrode of the triode Q5 is grounded in series through a first voltage division circuit, and the collector electrode of the triode Q5 is grounded through a second voltage division circuit. An emitter of the triode Q5 is connected to a direct-current power supply V +, an intermediate node of the first series voltage division circuit is connected with an enable end of the constant-current driver U11, the enable end is grounded through a capacitor C21, a power switch end of the constant-current driver U11 is connected with a current sampling end of the constant-current driver U11 sequentially through an inductor L3 and an LED assembly, the current sampling end is connected to the direct-current power supply V + through a current detection resistor, and the direct-current power supply V + is connected with the LED assembly. The power input end of the constant-current driver U11 is connected to the direct-current power supply V +, and the ground end of the constant-current driver U11 is grounded. Compared with an existing circuit, the constant-current driver U11 participates, so that the control precision is high, the dimming ratio is high, and the delay effect is better.

The utility model provides an onboard antenna and gateway equipment, and relates to the technical field of antenna equipment, the onboard antenna comprises a circuit board, the circuit board comprises a first surface and a second surface which are oppositely arranged in a first direction, and the first surface of the circuit board is provided with a metal ground layer; the antenna body is arranged on the first surface, and a coupling seam is formed between the antenna body and the metal ground layer; the coupling sheet is arranged on the second surface, and the coupling sheet and the coupling slot are oppositely arranged; the antenna body couples the current to the metal ground layer through the coupling slot and also couples the current to the coupling sheet, and the coupling sheet couples the current on the coupling sheet to the metal ground layer through the coupling slot. According to the onboard antenna provided by the invention, the current at the coupling slot is enhanced, so that when the onboard antenna needs signal radiation with relatively low resonant frequency, the length of the antenna body does not need to be increased, the volume of the gateway equipment is not increased, the miniaturization design of the gateway equipment is facilitated, and the practicability of the gateway equipment is improved.

The utility model provides a power module, which comprises the following steps: the power module comprises a lining plate and a power circuit arranged on the lining plate, the power circuit comprises a Vienna rectifier circuit and a three-phase full-bridge circuit, and the output end of the Vienna rectifier circuit is connected with the input end of the three-phase full-bridge circuit; wherein power devices in the Vienna rectification circuit and the three-phase full-bridge circuit are composed of a plurality of power chips with corresponding functions, and the power chips are silicon carbide power chips. The power factor of the power module can be improved by adopting the Vienna rectifying circuit, meanwhile, the output current of the power module is improved through the plurality of power chips, so that the output power is improved, a silicon carbide-based chip is further adopted to replace an existing silicon-based chip, the size of the chip can be reduced, and the cost is reduced. Therefore, under the condition that higher output power is set, the size of the power module is prevented from being increased.

Disclosed are a three-branch balanced winding of a six-pole, fifty-four-slot flat copper wire motor and a method. A three-branch balanced winding of a six-pole, fifty-four-slot flat copper wire motor includes a three-phase flat copper wire winding distributed symmetrically along a circumferential direction of an iron core slot. Spans of the welding end (1) are equal, and heights of the lead welding ends (1) are equal. The power lead wire end (3) is composed of four U-Pin wire types and one I-pin wire type, and a first layer of the power lead wire end (3) is composed of an I-Pin wire (4) and an U-pin wire (5) with an equal span. Both a second layer and a third layer are composed of U-pin wires (6) with an equal span. Both a fourth layer and a fifth layer are composed of U-pin wires (7) with an equal span. A sixth layer is composed of a U-pin wire (8) with an equal span.

The present application relates to the technical field of controllable nuclear fusion, and particularly relates to a device for controlling energy confinement time by using a limiter bias system. The device comprises a bias electrode head, a soft connection wire connected with the bias electrode head at one end and connected with a bias power supply system of an NCST spherical tokamak device at the other end, and a limiter main body installed on one side of the NCST spherical tokamak device and provided with the bias electrode head for restraining the escaped electrons generated by discharge of the NCST spherical tokamak device. The present application can restrain the escaped electrons generated by discharge of the NCST spherical tokamak device by installing the limiter bias system, improve the energy confinement time parameter of the NCST spherical tokamak device, significantly restrain the plasma instability, and thus increase the plasma current duration and improve the plasma current size.

The utility model discloses a wheat breeding illumination simulator, relates to the technical field of wheat breeding equipment, and aims to solve the problems that the illumination intensity and the illumination angle of the conventional illumination simulator cannot be changed as time goes on; and the heating value of the illumination simulator in long-time operation is large. Comprising a mounting box, a mounting plate is arranged in the mounting box, an illumination lamp is mounted on the mounting plate, and a driving mechanism used for driving the mounting plate to reciprocate in the mounting box is further arranged in the mounting box; an arc-shaped plate for adjusting the moving track of the mounting plate is further arranged on the side wall of the mounting box; a detection mechanism for detecting the position of the arc-shaped plate is further arranged on the inner wall of the mounting box, a plurality of groups of illumination lamps are arranged on the mounting plate, and the mounting plate is driven to do reciprocating motion with an arc-shaped motion trail in the mounting box under the driving of a driving mechanism and the limiting of the arc-shaped plate, so that the simulation of east rising and west falling of the sun is realized; and illumination angle adjustment of the illumination simulator is realized.

The invention discloses a power supply protection device and a battery management system. The power supply protection device comprises a first switch module through which a power supply supplies power to a post-stage load; a voltage difference exists between the control end and the first end of the second switch module; the second switch module is used for charging the control end of the first switch module in a conducting state so as to control the first switch module to be conducted; a voltage difference exists between the control end and the first end of the third switch module; the third switch module is used for controlling the first switch module to be switched off when the device exceeds the set voltage and limiting the current increase of the first switch module when the current of the post-stage load exceeds the set current; and the comparison module is used for controlling the on-off of the first switch module by controlling the second switch module at a set time interval. According to the embodiment of the invention, the power utilization reliability of the rear-end load is improved.

The invention relates to the technical field of inductance elements, in particular to an inductance element, a preparation method thereof and electronic equipment. The inductor element comprises an inductor body and a physical vapor deposition metal layer. The inductor body has an assembly surface. A physical vapor deposition metal layer is disposed on the assembly surface. Wherein a separation groove is arranged between two ends of the physical vapor deposition metal layer in the direction parallel to the assembly surface, the separation groove is configured to cut off the physical vapor deposition metal layer into two parts along the thickness direction of the physical vapor deposition metal layer, one part of the physical vapor deposition metal layer forms a first extraction electrode of the inductor body, and the other part of the physical vapor deposition metal layer forms a second extraction electrode of the inductor body. And the other part of the physical vapor deposition metal layer forms a second extraction electrode of the inductor body. According to the inductance element, the physical vapor deposition metal layer is used as the electrode, the physical vapor deposition metal layer has the advantage of being small in thickness, the volume ratio of the inductance body in the inductance element can be increased, and then the inductance value of the inductance element is improved.

The application belongs to the technical field of perovskite solar cells, and discloses a phosphonic acid group-containing small-molecule additive perovskite thin film and a preparation method thereof and a trans perovskite solar cell, which comprises the following steps: S1, dissolving metal halide and organic ammonium halide in an organic solvent to prepare a perovskite ABX3 precursor solution, wherein A is Cs + , methylamine ion or formamidinium ion, B is Pb 2+ , and X is halogen ion, including Cl ‑ , Br ‑ , and I ‑ ; S2, adding a phosphonic acid group-containing small-molecule additive to the perovskite precursor solution in S1 to prepare a precursor solution containing small-molecule doping; and S3, depositing the precursor solution containing small-molecule doping in S2 on a conductive substrate to obtain a perovskite thin film after annealing. The application uses a phosphonic acid group-containing small-molecule additive to realize the preparation of a trans perovskite solar cell device without a hole transport layer. The solar cell device has excellent photovoltaic performance, and the photoelectric conversion efficiency is more than 25%, and the device shows excellent long-term stability.

This invention proposes an ABX3 seed-induced crystallization perovskite thin film and a method for preparing the same for photovoltaic cells. The ABX3 seed-induced crystallization perovskite thin film contains potassium stannate. This ABX3 seed-induced crystallization perovskite thin film exhibits high crystallinity and good stability.

The application provides a display substrate and a display device, wherein the display substrate comprises a substrate, a photosensitive circuit and a display circuit arranged on the substrate, wherein the photosensitive circuit comprises a photodiode and a first driving transistor coupled with the photodiode; the display circuit comprises a display device, a second driving transistor and a switch transistor coupled with the display device respectively; the distance between the corresponding gate layer and the active layer of the first driving transistor and the second driving transistor is greater than the distance between the corresponding gate layer and the active layer of the switch transistor. The display quality is improved.